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AOK30B120D2 AOK30B120D2 Alpha & Omega Semiconductor Inc. AOK30B120D2.pdf Description: IGBT 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/115ns
Switching Energy: 1.28mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 340 W
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AOK30B135C1 Alpha & Omega Semiconductor Inc. Description: IGBT 30A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/110ns
Switching Energy: 1.45mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 288 W
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AOK30B135D2 Alpha & Omega Semiconductor Inc. Description: IGBT 1350V 30A TO-247
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AOK30B135W1 AOK30B135W1 Alpha & Omega Semiconductor Inc. AOK30B135W1.pdf Description: IGBT 1350V 60A TO-247
Power - Max: 340 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 62 nC
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 1.47mJ (off)
Td (on/off) @ 25°C: -/129ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK30B60D AOK30B60D Alpha & Omega Semiconductor Inc. AOK30B60D.pdf Description: IGBT 600V 60A TO-247
Power - Max: 278 W
Current - Collector Pulsed (Icm): 128 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 47 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 1.18mJ (on), 200µJ (off)
Td (on/off) @ 25°C: 26ns/71ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 137 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK30B60D1 AOK30B60D1 Alpha & Omega Semiconductor Inc. AOK30B60D1.pdf Description: IGBT 600V 60A 208W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/58ns
Switching Energy: 1.1mJ (on), 240µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 208 W
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AOK30B65M2 AOK30B65M2 Alpha & Omega Semiconductor Inc. AOK30B65M2.pdf Description: IGBT 650V 60A TO-247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 63 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 410µJ (off)
Td (on/off) @ 25°C: 34ns/138ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 339 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK40B120M1 AOK40B120M1 Alpha & Omega Semiconductor Inc. AOK40B120M1.pdf Description: IGBT 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 90ns/226ns
Switching Energy: 3.87mJ (on), 1.25mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 600 W
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AOK40B120N1 AOK40B120N1 Alpha & Omega Semiconductor Inc. AOK40B120N1.pdf Description: IGBT 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 57ns/146ns
Switching Energy: 3.4mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 600 W
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AOK40B120P1 AOK40B120P1 Alpha & Omega Semiconductor Inc. AOK40B120P1.pdf Description: IGBT 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 53ns/210ns
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 202 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 600 W
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AOK40B60D AOK40B60D Alpha & Omega Semiconductor Inc. AOK40B60D.pdf Description: IGBT 600V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 138 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 28ns/77ns
Switching Energy: 1.72mJ (on), 300µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 63.5 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 312.5 W
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AOK40B60D1 AOK40B60D1 Alpha & Omega Semiconductor Inc. AOK40B60D1.pdf Description: IGBT 600V 80A TO-247
Power - Max: 278 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 45 nC
Test Condition: 400V, 40A, 7.5Ohm, 15V
Switching Energy: 1.55mJ (on), 300µJ (off)
Td (on/off) @ 25°C: 29ns/74ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Reverse Recovery Time (trr): 127 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK40B65H1 AOK40B65H1 Alpha & Omega Semiconductor Inc. AOK40B65H1.pdf Description: IGBT 650V 80A TO-247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 63 nC
Test Condition: 400V, 40A, 7.5Ohm, 15V
Switching Energy: 1.27mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 41ns/130ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Reverse Recovery Time (trr): 346 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK40B65H2AL AOK40B65H2AL Alpha & Omega Semiconductor Inc. AOK40B65H2AL.pdf Description: IGBT 650V 80A TO-247
Power - Max: 260 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 61 nC
Test Condition: 600V, 40A, 7.5Ohm, 15V
Switching Energy: 1.17mJ (on), 540µJ (off)
Td (on/off) @ 25°C: 30ns/117ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Reverse Recovery Time (trr): 315 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK40B65HQ1 AOK40B65HQ1 Alpha & Omega Semiconductor Inc. AOK40B65HQ1.pdf Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
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AOK40B65HQ2 AOK40B65HQ2 Alpha & Omega Semiconductor Inc. AOK40B65HQ2.pdf Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
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AOK40B65HQ3 AOK40B65HQ3 Alpha & Omega Semiconductor Inc. AOK40B65HQ3.pdf Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
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AOK40B65M3 AOK40B65M3 Alpha & Omega Semiconductor Inc. AOK40B65M3.pdf Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 365 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 40ns/125ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 59 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
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AOK40N30L AOK40N30L Alpha & Omega Semiconductor Inc. AOK40N30.pdf Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
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AOK42S60L AOK42S60L Alpha & Omega Semiconductor Inc. TO247.pdf Description: MOSFET N-CH 600V 39A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK50B60D1 AOK50B60D1 Alpha & Omega Semiconductor Inc. AOK50B60D1.pdf Description: IGBT 600V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/68ns
Switching Energy: 2.37mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 64 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 168 A
Power - Max: 312 W
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AOK50B65GL1 AOK50B65GL1 Alpha & Omega Semiconductor Inc. AOK500V120X2.pdf Description: IGBT 50A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 282ns/915ns
Switching Energy: 3.37mJ (on), 1.59mJ (off)
Test Condition: 300V, 50A, 100Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 312 W
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AOK50B65H1 AOK50B65H1 Alpha & Omega Semiconductor Inc. AOK50B65H1.pdf Description: IGBT 650V 50A TO-247
Power - Max: 375 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 76 nC
Test Condition: 400V, 50A, 6Ohm, 15V
Switching Energy: 1.92mJ (on), 850µJ (off)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Td (on/off) @ 25°C: 37ns/141ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Reverse Recovery Time (trr): 261 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
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AOK50B65M2 AOK50B65M2 Alpha & Omega Semiconductor Inc. AOK50B65M2.pdf Description: IGBT 650V 50A TO247
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 500 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 102 nC
Test Condition: 400V, 50A, 6Ohm, 15V
Switching Energy: 2.09mJ (on), 1.03mJ (off)
Td (on/off) @ 25°C: 46ns/182ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Reverse Recovery Time (trr): 327 ns
Input Type: Standard
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AOK53S60 AOK53S60 Alpha & Omega Semiconductor Inc. TO247.pdf Description: MOSFET N-CH 600V 53A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3034 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK53S60L AOK53S60L Alpha & Omega Semiconductor Inc. AOK53S60.pdf Description: MOSFET N-CH 600V 53A TO247
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AOK5N100 AOK5N100 Alpha & Omega Semiconductor Inc. AOK5N100.pdf Description: MOSFET N-CH 1000V 4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Produkt ist nicht verfügbar
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AOK5N100L AOK5N100L Alpha & Omega Semiconductor Inc. AOK5N100.pdf Description: MOSFET N-CH 1000V 4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Produkt ist nicht verfügbar
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AOK60B60D1 AOK60B60D1 Alpha & Omega Semiconductor Inc. TO247.pdf Description: IGBT 600V 120A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 137 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 32ns/74ns
Switching Energy: 3.1mJ (on), 730µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 417 W
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AOK60B65H1 AOK60B65H1 Alpha & Omega Semiconductor Inc. AOK60B65H1.pdf Description: IGBT 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 288 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 39ns/153ns
Switching Energy: 2.42mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
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AOK60B65H2AL AOK60B65H2AL Alpha & Omega Semiconductor Inc. AOK60B65H2AL.pdf Description: IGBT 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 318 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 35ns/168ns
Switching Energy: 2.36mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
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AOK60B65HQ3 AOK60B65HQ3 Alpha & Omega Semiconductor Inc. AOK60B65HQ3.pdf Description: IGBT 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/157ns
Switching Energy: 2.21mJ (on), 1.2mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
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AOK60B65M3 AOK60B65M3 Alpha & Omega Semiconductor Inc. AOK60B65M3.pdf Description: IGBT 650V 120A TO-247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Gate Charge: 106 nC
Test Condition: 400V, 60A, 5Ohm, 15V
Switching Energy: 2.6mJ (on), 1.3mJ (off)
Td (on/off) @ 25°C: 44ns/166ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A
Reverse Recovery Time (trr): 346 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK60N30L AOK60N30L Alpha & Omega Semiconductor Inc. AOK60N30L.pdf Description: MOSFET N-CH 300V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 30A, 10V
Power Dissipation (Max): 658W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
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AOK66518 Alpha & Omega Semiconductor Inc. Description: AOK66518
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 18W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
Produkt ist nicht verfügbar
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AOK66613 AOK66613 Alpha & Omega Semiconductor Inc. AOK66613.pdf Description: MOSFET N-CH 60V 58.5A/120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Ta), 312W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
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AOK75B60D1 AOK75B60D1 Alpha & Omega Semiconductor Inc. TO247.pdf Description: IGBT 600V 150A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 147 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 33ns/84ns
Switching Energy: 3.7mJ (on), 1.3mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 118 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 500 W
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AOK75B65H1 AOK75B65H1 Alpha & Omega Semiconductor Inc. AOK75B65H1.pdf Description: IGBT 650V 75A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 295 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 47ns/175ns
Switching Energy: 3.77mJ (on), 2.04mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 556 W
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AOK8N80 AOK8N80 Alpha & Omega Semiconductor Inc. AOK8N80.pdf Description: MOSFET N-CH 800V 7.4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
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AOK8N80L AOK8N80L Alpha & Omega Semiconductor Inc. AOK8N80.pdf Description: MOSFET N-CH 800V 7.4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Produkt ist nicht verfügbar
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AOK9N90 AOK9N90 Alpha & Omega Semiconductor Inc. TO247.pdf Description: MOSFET N-CH 900V 9A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
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AOKS30B60D1 AOKS30B60D1 Alpha & Omega Semiconductor Inc. AOKS30B60D1.pdf Description: IGBT 600V 60A TO-247
Power - Max: 208 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Not For New Designs
Gate Charge: 34 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 1.1mJ (on), 240µJ (off)
Td (on/off) @ 25°C: 20ns/58ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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3+8.15 EUR
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AOKS40B60D1 AOKS40B60D1 Alpha & Omega Semiconductor Inc. AOKS40B60D1.pdf Description: IGBT 600V 40A TO247
Power - Max: 278 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Not For New Designs
Gate Charge: 45 nC
Test Condition: 400V, 40A, 7.5Ohm, 15V
Switching Energy: 1.55mJ (on), 300µJ (off)
Td (on/off) @ 25°C: 29ns/74ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOKS40B65H1 AOKS40B65H1 Alpha & Omega Semiconductor Inc. AOKS40B65H1.pdf Description: IGBT 650V 80A TO-247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 63 nC
Test Condition: 400V, 40A, 7.5Ohm, 15V
Switching Energy: 1.27mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 41ns/130ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOKS40B65H2AL AOKS40B65H2AL Alpha & Omega Semiconductor Inc. AOKS40B65H2AL.pdf Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 1.17mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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AOL1202 AOL1202 Alpha & Omega Semiconductor Inc. AOL1202.pdf Description: MOSFET N-CH 30V 16A 8ULTRA-SO
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AOL1206 AOL1206 Alpha & Omega Semiconductor Inc. AOL1206.pdf Description: MOSFET N-CH 30V 16A 8ULTRASO
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AOL1208 AOL1208 Alpha & Omega Semiconductor Inc. AOL1208.pdf Description: MOSFET N-CH 30V 11A 8ULTRASO
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AOL1240 AOL1240 Alpha & Omega Semiconductor Inc. AOL1240.pdf Description: MOSFET N-CH 40V 19A/69A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
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AOL1240 AOL1240 Alpha & Omega Semiconductor Inc. AOL1240.pdf Description: MOSFET N-CH 40V 19A/69A ULTRASO8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
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AOL1242 AOL1242 Alpha & Omega Semiconductor Inc. AOL1242.pdf Description: MOSFET N-CH 40V 14A/69A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 20 V
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AOL1404 AOL1404 Alpha & Omega Semiconductor Inc. AOL1404.pdf Description: MOSFET N-CH 20V 18A/45A ULTRASO8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
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AOL1404G AOL1404G Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 20V 30A/46A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 4.5V
Power Dissipation (Max): 6.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
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AOL1412 AOL1412 Alpha & Omega Semiconductor Inc. AOL1412.pdf Description: MOSFET N-CH 30V 17A/70A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7716 pF @ 15 V
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AOL1413 AOL1413 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET P-CH 30V 38A ULTRASO-8
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOL1414 AOL1414 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 30V 14A/85A ULTRASO8
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.08W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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AOL1418 AOL1418 Alpha & Omega Semiconductor Inc. AOL1418.pdf Description: MOSFET N-CH 30V 85A 8ULTRASO
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AOL1418 AOL1418 Alpha & Omega Semiconductor Inc. AOL1418.pdf Description: MOSFET N-CH 30V 85A 8ULTRASO
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AOL1422 AOL1422 Alpha & Omega Semiconductor Inc. AOL1422.pdf Description: MOSFET N-CH 30V 85A 8ULTRASO
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AOL1422 AOL1422 Alpha & Omega Semiconductor Inc. AOL1422.pdf Description: MOSFET N-CH 30V 85A 8ULTRASO
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AOK30B120D2 AOK30B120D2.pdf
AOK30B120D2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/115ns
Switching Energy: 1.28mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 340 W
Produkt ist nicht verfügbar
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AOK30B135C1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 30A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/110ns
Switching Energy: 1.45mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 288 W
Produkt ist nicht verfügbar
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AOK30B135D2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 1350V 30A TO-247
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AOK30B135W1 AOK30B135W1.pdf
AOK30B135W1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 1350V 60A TO-247
Power - Max: 340 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 62 nC
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 1.47mJ (off)
Td (on/off) @ 25°C: -/129ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 199 Stücke:
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AOK30B60D AOK30B60D.pdf
AOK30B60D
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 60A TO-247
Power - Max: 278 W
Current - Collector Pulsed (Icm): 128 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 47 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 1.18mJ (on), 200µJ (off)
Td (on/off) @ 25°C: 26ns/71ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 137 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK30B60D1 AOK30B60D1.pdf
AOK30B60D1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 60A 208W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/58ns
Switching Energy: 1.1mJ (on), 240µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 208 W
Produkt ist nicht verfügbar
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AOK30B65M2 AOK30B65M2.pdf
AOK30B65M2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 60A TO-247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 63 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 410µJ (off)
Td (on/off) @ 25°C: 34ns/138ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 339 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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3+9.26 EUR
30+5.16 EUR
120+4.26 EUR
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AOK40B120M1 AOK40B120M1.pdf
AOK40B120M1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 90ns/226ns
Switching Energy: 3.87mJ (on), 1.25mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 600 W
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AOK40B120N1 AOK40B120N1.pdf
AOK40B120N1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 57ns/146ns
Switching Energy: 3.4mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 600 W
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AOK40B120P1 AOK40B120P1.pdf
AOK40B120P1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 53ns/210ns
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 202 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 600 W
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AOK40B60D AOK40B60D.pdf
AOK40B60D
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 138 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 28ns/77ns
Switching Energy: 1.72mJ (on), 300µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 63.5 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 312.5 W
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AOK40B60D1 AOK40B60D1.pdf
AOK40B60D1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 80A TO-247
Power - Max: 278 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 45 nC
Test Condition: 400V, 40A, 7.5Ohm, 15V
Switching Energy: 1.55mJ (on), 300µJ (off)
Td (on/off) @ 25°C: 29ns/74ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Reverse Recovery Time (trr): 127 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK40B65H1 AOK40B65H1.pdf
AOK40B65H1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 80A TO-247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 63 nC
Test Condition: 400V, 40A, 7.5Ohm, 15V
Switching Energy: 1.27mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 41ns/130ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Reverse Recovery Time (trr): 346 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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2+10.69 EUR
10+7.12 EUR
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AOK40B65H2AL AOK40B65H2AL.pdf
AOK40B65H2AL
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 80A TO-247
Power - Max: 260 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 61 nC
Test Condition: 600V, 40A, 7.5Ohm, 15V
Switching Energy: 1.17mJ (on), 540µJ (off)
Td (on/off) @ 25°C: 30ns/117ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Reverse Recovery Time (trr): 315 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK40B65HQ1 AOK40B65HQ1.pdf
AOK40B65HQ1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
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AOK40B65HQ2 AOK40B65HQ2.pdf
AOK40B65HQ2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
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AOK40B65HQ3 AOK40B65HQ3.pdf
AOK40B65HQ3
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
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AOK40B65M3 AOK40B65M3.pdf
AOK40B65M3
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 365 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 40ns/125ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 59 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
auf Bestellung 178 Stücke:
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2+10.6 EUR
30+5.97 EUR
120+4.95 EUR
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AOK40N30L AOK40N30.pdf
AOK40N30L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
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AOK42S60L TO247.pdf
AOK42S60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 39A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK50B60D1 AOK50B60D1.pdf
AOK50B60D1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/68ns
Switching Energy: 2.37mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 64 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 168 A
Power - Max: 312 W
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AOK50B65GL1 AOK500V120X2.pdf
AOK50B65GL1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 50A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 282ns/915ns
Switching Energy: 3.37mJ (on), 1.59mJ (off)
Test Condition: 300V, 50A, 100Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 312 W
Produkt ist nicht verfügbar
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AOK50B65H1 AOK50B65H1.pdf
AOK50B65H1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 50A TO-247
Power - Max: 375 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 76 nC
Test Condition: 400V, 50A, 6Ohm, 15V
Switching Energy: 1.92mJ (on), 850µJ (off)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Td (on/off) @ 25°C: 37ns/141ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Reverse Recovery Time (trr): 261 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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AOK50B65M2 AOK50B65M2.pdf
AOK50B65M2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 50A TO247
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 500 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 102 nC
Test Condition: 400V, 50A, 6Ohm, 15V
Switching Energy: 2.09mJ (on), 1.03mJ (off)
Td (on/off) @ 25°C: 46ns/182ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Reverse Recovery Time (trr): 327 ns
Input Type: Standard
auf Bestellung 219 Stücke:
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AOK53S60 TO247.pdf
AOK53S60
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 53A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3034 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK53S60L AOK53S60.pdf
AOK53S60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 53A TO247
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AOK5N100 AOK5N100.pdf
AOK5N100
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 1000V 4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Produkt ist nicht verfügbar
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AOK5N100L AOK5N100.pdf
AOK5N100L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 1000V 4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Produkt ist nicht verfügbar
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AOK60B60D1 TO247.pdf
AOK60B60D1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 120A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 137 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 32ns/74ns
Switching Energy: 3.1mJ (on), 730µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 417 W
Produkt ist nicht verfügbar
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AOK60B65H1 AOK60B65H1.pdf
AOK60B65H1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 288 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 39ns/153ns
Switching Energy: 2.42mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
Produkt ist nicht verfügbar
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AOK60B65H2AL AOK60B65H2AL.pdf
AOK60B65H2AL
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 318 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 35ns/168ns
Switching Energy: 2.36mJ (on), 1.17mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
Produkt ist nicht verfügbar
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AOK60B65HQ3 AOK60B65HQ3.pdf
AOK60B65HQ3
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/157ns
Switching Energy: 2.21mJ (on), 1.2mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
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AOK60B65M3 AOK60B65M3.pdf
AOK60B65M3
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 120A TO-247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Gate Charge: 106 nC
Test Condition: 400V, 60A, 5Ohm, 15V
Switching Energy: 2.6mJ (on), 1.3mJ (off)
Td (on/off) @ 25°C: 44ns/166ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A
Reverse Recovery Time (trr): 346 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK60N30L AOK60N30L.pdf
AOK60N30L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 300V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 30A, 10V
Power Dissipation (Max): 658W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
Produkt ist nicht verfügbar
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AOK66518
Hersteller: Alpha & Omega Semiconductor Inc.
Description: AOK66518
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 18W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
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AOK66613 AOK66613.pdf
AOK66613
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 58.5A/120A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 15.6W (Ta), 312W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 189 Stücke:
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AnzahlPrivatkunde
3+10.01 EUR
30+5.64 EUR
120+4.68 EUR
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AOK75B60D1 TO247.pdf
AOK75B60D1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 150A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 147 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 33ns/84ns
Switching Energy: 3.7mJ (on), 1.3mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 118 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 500 W
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AOK75B65H1 AOK75B65H1.pdf
AOK75B65H1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 75A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 295 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 47ns/175ns
Switching Energy: 3.77mJ (on), 2.04mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 556 W
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AOK8N80 AOK8N80.pdf
AOK8N80
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 800V 7.4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
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AOK8N80L AOK8N80.pdf
AOK8N80L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 800V 7.4A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Produkt ist nicht verfügbar
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AOK9N90 TO247.pdf
AOK9N90
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 900V 9A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V
Produkt ist nicht verfügbar
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AOKS30B60D1 AOKS30B60D1.pdf
AOKS30B60D1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 60A TO-247
Power - Max: 208 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Not For New Designs
Gate Charge: 34 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 1.1mJ (on), 240µJ (off)
Td (on/off) @ 25°C: 20ns/58ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AnzahlPrivatkunde
3+8.15 EUR
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AOKS40B60D1 AOKS40B60D1.pdf
AOKS40B60D1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 40A TO247
Power - Max: 278 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Not For New Designs
Gate Charge: 45 nC
Test Condition: 400V, 40A, 7.5Ohm, 15V
Switching Energy: 1.55mJ (on), 300µJ (off)
Td (on/off) @ 25°C: 29ns/74ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AnzahlPrivatkunde
5+4.9 EUR
10+4.11 EUR
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AOKS40B65H1 AOKS40B65H1.pdf
AOKS40B65H1
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 80A TO-247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 63 nC
Test Condition: 400V, 40A, 7.5Ohm, 15V
Switching Energy: 1.27mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 41ns/130ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOKS40B65H2AL AOKS40B65H2AL.pdf
AOKS40B65H2AL
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 1.17mJ (on), 540µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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AOL1202 AOL1202.pdf
AOL1202
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A 8ULTRA-SO
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AOL1206 AOL1206.pdf
AOL1206
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 16A 8ULTRASO
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AOL1208 AOL1208.pdf
AOL1208
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 11A 8ULTRASO
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AOL1240 AOL1240.pdf
AOL1240
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 19A/69A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
Produkt ist nicht verfügbar
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AOL1240 AOL1240.pdf
AOL1240
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 19A/69A ULTRASO8
Packaging: Cut Tape (CT)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
Produkt ist nicht verfügbar
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AOL1242 AOL1242.pdf
AOL1242
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 14A/69A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 20 V
Produkt ist nicht verfügbar
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AOL1404 AOL1404.pdf
AOL1404
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 18A/45A ULTRASO8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Produkt ist nicht verfügbar
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AOL1404G
AOL1404G
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 30A/46A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 4.5V
Power Dissipation (Max): 6.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: UltraSO-8™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AOL1412 AOL1412.pdf
AOL1412
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 17A/70A ULTRASO8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: UltraSO-8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7716 pF @ 15 V
Produkt ist nicht verfügbar
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AOL1413 AOSGreenPolicy.pdf
AOL1413
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 38A ULTRASO-8
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AOL1414 AOSGreenPolicy.pdf
AOL1414
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 14A/85A ULTRASO8
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UltraSO-8™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.08W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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AOL1418 AOL1418.pdf
AOL1418
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 85A 8ULTRASO
Produkt ist nicht verfügbar
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AOL1418 AOL1418.pdf
AOL1418
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 85A 8ULTRASO
Produkt ist nicht verfügbar
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AOL1422 AOL1422.pdf
AOL1422
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 85A 8ULTRASO
Produkt ist nicht verfügbar
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AOL1422 AOL1422.pdf
AOL1422
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 85A 8ULTRASO
Produkt ist nicht verfügbar
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