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AOM020V120X2 AOM020V120X2 Alpha & Omega Semiconductor Inc. AOM020V120X2.pdf Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V
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AOM020V120X2Q AOM020V120X2Q Alpha & Omega Semiconductor Inc. AOM020V120X2.pdf Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V
Qualification: AEC-Q101
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AOM033V120X2 AOM033V120X2 Alpha & Omega Semiconductor Inc. AOM033V120X2.pdf Description: 1200V SILICON CARBIDE MOSFET
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
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AOM033V120X2Q AOM033V120X2Q Alpha & Omega Semiconductor Inc. AOM033V120X2Q.pdf Description: 1200V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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AOM060V65X2 AOM060V65X2 Alpha & Omega Semiconductor Inc. AOM060V65X2.pdf Description: 650V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
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AOM060V75X2Q AOM060V75X2Q Alpha & Omega Semiconductor Inc. AOM060V75X2Q.pdf Description: 750V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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AOM065V120X2 AOM065V120X2 Alpha & Omega Semiconductor Inc. AOM065V120X2.pdf Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Power Dissipation (Max): 187.5W (Tj)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
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AOM065V120X2Q AOM065V120X2Q Alpha & Omega Semiconductor Inc. AOM065V120X2Q.pdf Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 187.5W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
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AOMU66414Q Alpha & Omega Semiconductor Inc. Description: DUAL N
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (8x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 6.2W (Ta), 68W (Tc), 6.2W (Ta), 65W (Tc)
Technology: MOSFET (Metal Oxide)
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AOMU66464Q Alpha & Omega Semiconductor Inc. Description: AOMU66464Q
Packaging: Bulk
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AON1605 AON1605 Alpha & Omega Semiconductor Inc. AON1605.pdf Description: MOSFET P-CH 20V 0.7A 3DFN
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AON1605_001 AON1605_001 Alpha & Omega Semiconductor Inc. AON1605.pdf Description: MOSFET P-CH 20V 0.7A 3DFN
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AON1606 AON1606 Alpha & Omega Semiconductor Inc. AON1606.pdf Description: MOSFET N-CH 20V 700MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 3-DFN (1.0 x 0.60)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
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AON1606_001 AON1606_001 Alpha & Omega Semiconductor Inc. AON1606.pdf Description: MOSFET N-CH 20V 700MA 3DFN
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AON1610 AON1610 Alpha & Omega Semiconductor Inc. AON1610.pdf Description: MOSFET N-CH 20V 4A 6DFN
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AON1611 AON1611 Alpha & Omega Semiconductor Inc. AON1611.pdf Description: MOSFET P-CH 20V 4A 6DFN
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AON1611 AON1611 Alpha & Omega Semiconductor Inc. AON1611.pdf Description: MOSFET P-CH 20V 4A 6DFN
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AON1620 AON1620 Alpha & Omega Semiconductor Inc. AON1620.pdf Description: MOSFET N-CH 12V 4A 6DFN
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AON1634 AON1634 Alpha & Omega Semiconductor Inc. AON1634.pdf Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
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AON1634 AON1634 Alpha & Omega Semiconductor Inc. AON1634.pdf Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
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AON2240 AON2240 Alpha & Omega Semiconductor Inc. AON2240.pdf Description: MOSFET N-CH 40V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V
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AON2240 AON2240 Alpha & Omega Semiconductor Inc. AON2240.pdf Description: MOSFET N-CH 40V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V
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AON2260 AON2260 Alpha & Omega Semiconductor Inc. AON2260.pdf Description: MOSFET N-CH 60V 6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V
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AON2260 AON2260 Alpha & Omega Semiconductor Inc. AON2260.pdf Description: MOSFET N-CH 60V 6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V
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AON2290 AON2290 Alpha & Omega Semiconductor Inc. AON2290.pdf Description: MOSFET N CH 100V 4.5A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
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AON2290 AON2290 Alpha & Omega Semiconductor Inc. AON2290.pdf Description: MOSFET N CH 100V 4.5A DFN 2X2B
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
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AON2392 Alpha & Omega Semiconductor Inc. AON2392.pdf Description: MOSFET N-CHANNEL 100V 8A 8DFN
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AON2400 AON2400 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 8V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 2.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 4 V
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AON2401 AON2401 Alpha & Omega Semiconductor Inc. AON2401.pdf Description: MOSFET P-CH 8V 8A 6DFN
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AON2401 AON2401 Alpha & Omega Semiconductor Inc. AON2401.pdf Description: MOSFET P-CH 8V 8A 6DFN
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AON2403 AON2403 Alpha & Omega Semiconductor Inc. AON2403.pdf Description: MOSFET P-CH 12V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
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AON2403 AON2403 Alpha & Omega Semiconductor Inc. AON2403.pdf Description: MOSFET P-CH 12V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
Produkt ist nicht verfügbar
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AON2405 AON2405 Alpha & Omega Semiconductor Inc. AON2405.pdf Description: MOSFET P-CH 20V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Produkt ist nicht verfügbar
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AON2405 AON2405 Alpha & Omega Semiconductor Inc. AON2405.pdf Description: MOSFET P-CH 20V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
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AON2406 AON2406 Alpha & Omega Semiconductor Inc. AON2406.pdf Description: MOSFET N-CH 20V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V
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AON2406 AON2406 Alpha & Omega Semiconductor Inc. AON2406.pdf Description: MOSFET N-CH 20V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V
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AON2407 AON2407 Alpha & Omega Semiconductor Inc. AON2407.pdf Description: MOSFET P-CH 30V 6.3A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V
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AON2407 AON2407 Alpha & Omega Semiconductor Inc. AON2407.pdf Description: MOSFET P-CH 30V 6.3A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V
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AON2408 AON2408 Alpha & Omega Semiconductor Inc. AON2408.pdf Description: MOSFET N CH 20V 8A DFN 2X2B
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 10 V
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AON2408 AON2408 Alpha & Omega Semiconductor Inc. AON2408.pdf Description: MOSFET N CH 20V 8A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 10 V
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AON2409 AON2409 Alpha & Omega Semiconductor Inc. AON2409.pdf Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
Produkt ist nicht verfügbar
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AON2409 AON2409 Alpha & Omega Semiconductor Inc. AON2409.pdf Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
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AON2410 AON2410 Alpha & Omega Semiconductor Inc. AON2410.pdf Description: MOSFET N CH 30V 8A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 813 pF @ 15 V
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AON2411 AON2411 Alpha & Omega Semiconductor Inc. AON2411.pdf Description: MOSFET P-CH 12V 20A 8DFN
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AON2411 AON2411 Alpha & Omega Semiconductor Inc. AON2411.pdf Description: MOSFET P-CH 12V 20A 8DFN
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AON2420 AON2420 Alpha & Omega Semiconductor Inc. AON2420.pdf Description: MOSFET N-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
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AON2420 AON2420 Alpha & Omega Semiconductor Inc. AON2420.pdf Description: MOSFET N-CH 30V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Produkt ist nicht verfügbar
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AON2701 AON2701 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET P-CH 20V 3A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2701L#A AON2701L#A Alpha & Omega Semiconductor Inc. Description: MOSFET P-CH 20V 3A 6DFN
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AON2705 AON2705 Alpha & Omega Semiconductor Inc. AON2705.pdf Description: MOSFET P-CH 30V 3A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2707 AON2707 Alpha & Omega Semiconductor Inc. AON2707.pdf Description: MOSFET P-CH 30V 4A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.8W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2800 AON2800 Alpha & Omega Semiconductor Inc. AON2800.pdf Description: MOSFET 2N-CH 20V 4.5A 6DFN
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AON2801 AON2801 Alpha & Omega Semiconductor Inc. AON2801.pdf Description: MOSFET 2P-CH 20V 3A DFN2X2-6L
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AON2801L Alpha & Omega Semiconductor Inc. AON2801.pdf Description: MOSFET P-CH DUAL DFN
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AON2801L#A AON2801L#A Alpha & Omega Semiconductor Inc. Description: MOSFET 2P-CH 20V 3A DFN2X2-6L
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AON2802 AON2802 Alpha & Omega Semiconductor Inc. AON2802.pdf Description: MOSFET 2N-CH 30V 2A 6DFN
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AON2803 AON2803 Alpha & Omega Semiconductor Inc. AON2803.pdf Description: MOSFET 2P-CH 20V 3.8A 6DFN
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AON2803G Alpha & Omega Semiconductor Inc. Description: MOSFET P-CH DUAL
Packaging: Tape & Reel (TR)
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AON2809 AON2809 Alpha & Omega Semiconductor Inc. AON2809.pdf Description: MOSFET 2P-CH 12V 2A 6DFN
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AON2810 AON2810 Alpha & Omega Semiconductor Inc. AON2810.pdf Description: MOSFET 2N-CH 30V 2A 6DFN
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AOM020V120X2 AOM020V120X2.pdf
AOM020V120X2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V
auf Bestellung 230 Stücke:
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AOM020V120X2Q AOM020V120X2.pdf
AOM020V120X2Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 217 Stücke:
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1+61.83 EUR
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AOM033V120X2 AOM033V120X2.pdf
AOM033V120X2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
auf Bestellung 234 Stücke:
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AOM033V120X2Q AOM033V120X2Q.pdf
AOM033V120X2Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 145 Stücke:
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AOM060V65X2 AOM060V65X2.pdf
AOM060V65X2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 650V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
auf Bestellung 240 Stücke:
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10+13.55 EUR
240+9.22 EUR
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AOM060V75X2Q AOM060V75X2Q.pdf
AOM060V75X2Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 750V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 330 Stücke:
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1+22.65 EUR
10+15.72 EUR
240+10.94 EUR
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AOM065V120X2 AOM065V120X2.pdf
AOM065V120X2
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Power Dissipation (Max): 187.5W (Tj)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
auf Bestellung 224 Stücke:
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AnzahlPrivatkunde
2+16.02 EUR
10+10.96 EUR
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AOM065V120X2Q AOM065V120X2Q.pdf
AOM065V120X2Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 187.5W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
auf Bestellung 238 Stücke:
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AOMU66414Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: DUAL N
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (8x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 6.2W (Ta), 68W (Tc), 6.2W (Ta), 65W (Tc)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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AOMU66464Q
Hersteller: Alpha & Omega Semiconductor Inc.
Description: AOMU66464Q
Packaging: Bulk
Produkt ist nicht verfügbar
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AON1605 AON1605.pdf
AON1605
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 0.7A 3DFN
Produkt ist nicht verfügbar
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AON1605_001 AON1605.pdf
AON1605_001
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 0.7A 3DFN
Produkt ist nicht verfügbar
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AON1606 AON1606.pdf
AON1606
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 700MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 3-DFN (1.0 x 0.60)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON1606_001 AON1606.pdf
AON1606_001
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 700MA 3DFN
Produkt ist nicht verfügbar
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AON1610 AON1610.pdf
AON1610
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 4A 6DFN
Produkt ist nicht verfügbar
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AON1611 AON1611.pdf
AON1611
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 4A 6DFN
Produkt ist nicht verfügbar
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AON1611 AON1611.pdf
AON1611
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 4A 6DFN
Produkt ist nicht verfügbar
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AON1620 AON1620.pdf
AON1620
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 12V 4A 6DFN
Produkt ist nicht verfügbar
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AON1634 AON1634.pdf
AON1634
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
Produkt ist nicht verfügbar
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AON1634 AON1634.pdf
AON1634
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
Produkt ist nicht verfügbar
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AON2240 AON2240.pdf
AON2240
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V
Produkt ist nicht verfügbar
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AON2240 AON2240.pdf
AON2240
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V
Produkt ist nicht verfügbar
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AON2260 AON2260.pdf
AON2260
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.43 EUR
6000+0.39 EUR
9000+0.38 EUR
15000+0.36 EUR
21000+0.35 EUR
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AON2260 AON2260.pdf
AON2260
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V
auf Bestellung 21988 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.78 EUR
19+1.11 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
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AON2290 AON2290.pdf
AON2290
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 100V 4.5A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.44 EUR
6000+0.4 EUR
9000+0.38 EUR
15000+0.37 EUR
21000+0.36 EUR
30000+0.35 EUR
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AON2290 AON2290.pdf
AON2290
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 100V 4.5A DFN 2X2B
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
auf Bestellung 100959 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.8 EUR
19+1.12 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.51 EUR
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AON2392 AON2392.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 100V 8A 8DFN
Produkt ist nicht verfügbar
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AON2400 AOSGreenPolicy.pdf
AON2400
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 2.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 4 V
Produkt ist nicht verfügbar
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AON2401 AON2401.pdf
AON2401
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 8V 8A 6DFN
Produkt ist nicht verfügbar
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AON2401 AON2401.pdf
AON2401
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 8V 8A 6DFN
Produkt ist nicht verfügbar
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AON2403 AON2403.pdf
AON2403
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
auf Bestellung 2665 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
25+0.86 EUR
100+0.58 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 17 Stücke
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AON2403 AON2403.pdf
AON2403
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
Produkt ist nicht verfügbar
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AON2405 AON2405.pdf
AON2405
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Produkt ist nicht verfügbar
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AON2405 AON2405.pdf
AON2405
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Produkt ist nicht verfügbar
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AON2406 AON2406.pdf
AON2406
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V
auf Bestellung 26346 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.59 EUR
22+1 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
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AON2406 AON2406.pdf
AON2406
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.38 EUR
6000+0.36 EUR
9000+0.33 EUR
15000+0.32 EUR
21000+0.31 EUR
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AON2407 AON2407.pdf
AON2407
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 6.3A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V
Produkt ist nicht verfügbar
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AON2407 AON2407.pdf
AON2407
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 6.3A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V
Produkt ist nicht verfügbar
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AON2408 AON2408.pdf
AON2408
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 20V 8A DFN 2X2B
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 10 V
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.68 EUR
20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
1000+0.48 EUR
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AON2408 AON2408.pdf
AON2408
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 20V 8A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 10 V
Produkt ist nicht verfügbar
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AON2409 AON2409.pdf
AON2409
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
Produkt ist nicht verfügbar
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AON2409 AON2409.pdf
AON2409
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
auf Bestellung 628 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
20+1.07 EUR
100+0.74 EUR
500+0.58 EUR
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AON2410 AON2410.pdf
AON2410
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N CH 30V 8A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 813 pF @ 15 V
Produkt ist nicht verfügbar
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AON2411 AON2411.pdf
AON2411
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 20A 8DFN
Produkt ist nicht verfügbar
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AON2411 AON2411.pdf
AON2411
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 20A 8DFN
Produkt ist nicht verfügbar
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AON2420 AON2420.pdf
AON2420
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Produkt ist nicht verfügbar
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AON2420 AON2420.pdf
AON2420
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Produkt ist nicht verfügbar
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AON2701 AOSGreenPolicy.pdf
AON2701
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2701L#A
AON2701L#A
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3A 6DFN
Produkt ist nicht verfügbar
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AON2705 AON2705.pdf
AON2705
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2707 AON2707.pdf
AON2707
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 4A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.8W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2800 AON2800.pdf
AON2800
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4.5A 6DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AON2801 AON2801.pdf
AON2801
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 20V 3A DFN2X2-6L
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AON2801L AON2801.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH DUAL DFN
Produkt ist nicht verfügbar
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AON2801L#A
AON2801L#A
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 20V 3A DFN2X2-6L
Produkt ist nicht verfügbar
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AON2802 AON2802.pdf
AON2802
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 2A 6DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AON2803 AON2803.pdf
AON2803
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 20V 3.8A 6DFN
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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AON2803G
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH DUAL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2809 AON2809.pdf
AON2809
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 12V 2A 6DFN
Produkt ist nicht verfügbar
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AON2810 AON2810.pdf
AON2810
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 2A 6DFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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