Produkte > ALPHA & OMEGA SEMICONDUCTOR > Alle Produkte des Herstellers ALPHA & OMEGA SEMICONDUCTOR (4275) > Seite 17 nach 72
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AOC2412 | Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 20V 4.5A 4-Pin Alpha DFN |
Produkt ist nicht verfügbar |
||||||||||||
| AOC2413 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 8V 3.5A 4-Pin Alpha DFN |
Produkt ist nicht verfügbar |
||||||||||||
 |
AOC2415 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN |
Produkt ist nicht verfügbar |
|||||||||||
|
|
AOC2417 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN |
Produkt ist nicht verfügbar |
|||||||||||
|
|
AOC2421 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 8V 2.5A 4-Pin Alpha DFN T/R |
Produkt ist nicht verfügbar |
|||||||||||
| AOC2421 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4 Mounting: SMD Case: DFN4 Polarisation: unipolar Gate charge: 7.5nC Kind of channel: enhanced Gate-source voltage: ±5V Power dissipation: 0.6W Drain-source voltage: -8V Drain current: -2.5A On-state resistance: 62mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| AOC2421 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4 Mounting: SMD Case: DFN4 Polarisation: unipolar Gate charge: 7.5nC Kind of channel: enhanced Gate-source voltage: ±5V Power dissipation: 0.6W Drain-source voltage: -8V Drain current: -2.5A On-state resistance: 62mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
|
|
AOC2422 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 8V 3.5A 4-Pin Alpha DFN |
Produkt ist nicht verfügbar |
|||||||||||
| AOC2422 | Alpha & Omega Semiconductor |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
| AOC2423 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 20V 2A 4-Pin Alpha DFN |
Produkt ist nicht verfügbar |
||||||||||||
 |
AOC2802 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 6A 4-Pin WLCSP |
Produkt ist nicht verfügbar |
|||||||||||
| AOC2804 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4A Power dissipation: 0.7W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 22mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
| AOC2804 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4A Power dissipation: 0.7W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 22mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| AOC2804B | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Power dissipation: 1.3W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 34mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||||
| AOC2804B | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 6A T/R |
Produkt ist nicht verfügbar |
||||||||||||
| AOC2804B | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Power dissipation: 1.3W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 34mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| AOC2806 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4 Mounting: SMD Drain-source voltage: 20V Drain current: 4.5A On-state resistance: 18mΩ Type of transistor: N-MOSFET x2 Power dissipation: 0.7W Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±12V Case: DFN4 |
Produkt ist nicht verfügbar |
||||||||||||
| AOC2806 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4 Mounting: SMD Drain-source voltage: 20V Drain current: 4.5A On-state resistance: 18mΩ Type of transistor: N-MOSFET x2 Power dissipation: 0.7W Polarisation: unipolar Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±12V Case: DFN4 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| AOC2874 | Alpha & Omega Semiconductor |
N-Channel MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3860A | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.5W Case: DFN6 Gate-source voltage: ±8V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3860A | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.5W Case: DFN6 Gate-source voltage: ±8V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3862 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Mounting: SMD Power dissipation: 2.5W Gate charge: 46nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Semiconductor structure: common drain Case: DFN6 On-state resistance: 3mΩ |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3862 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Mounting: SMD Power dissipation: 2.5W Gate charge: 46nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Semiconductor structure: common drain Case: DFN6 On-state resistance: 3mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3868 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.5W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: DFN6 |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3868 | Alpha & Omega Semiconductor |
12V Common-Drain Dual N-Channel MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3868 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.5W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: DFN6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3870A | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.3W Case: DFN10 Gate-source voltage: ±8V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3870A | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.3W Case: DFN10 Gate-source voltage: ±8V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3878 | Alpha & Omega Semiconductor |
N-Channel MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3878 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: DFN10 Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 2mΩ |
Produkt ist nicht verfügbar |
||||||||||||
| AOC3878 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: DFN10 Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 2mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| AOCA24106E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain Mounting: SMD Case: DFN6 Power dissipation: 2.7W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±8V Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 5.6mΩ Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |
||||||||||||
| AOCA24106E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain Mounting: SMD Case: DFN6 Power dissipation: 2.7W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±8V Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 5.6mΩ Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| AOCA24108E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.2W Case: DFN6 Gate-source voltage: ±8V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
||||||||||||
| AOCA24108E | Alpha & Omega Semiconductor |
Trans MOSFET N-CH Si 12V 14A 6-Pin Alpha DFN T/R |
Produkt ist nicht verfügbar |
||||||||||||
| AOCA24108E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.2W Case: DFN6 Gate-source voltage: ±8V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| AOCA32106E | Alpha & Omega Semiconductor |
12V Common-Drain Dual N-Channel MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| AOCA32317 | Alpha & Omega Semiconductor |
LV Common Drain Battery MOSFETS |
Produkt ist nicht verfügbar |
||||||||||||
 |
AOCA36102E | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 22V 30A 10-Pin Alpha DFN T/R |
Produkt ist nicht verfügbar |
|||||||||||
| AOCA36116C | Alpha & Omega Semiconductor |
Common Drain Dual N Channel MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
| AOCA36116C | Alpha & Omega Semiconductor |
Common Drain Dual N Channel MOSFET |
Produkt ist nicht verfügbar |
||||||||||||
 |
AOD11S60 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
|||||||||||
| AOD11S60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Pulsed drain current: 45A Power dissipation: 208W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.11Ω Gate charge: 11nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
 |
AOD11S60 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
|||||||||||
| AOD11S60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Pulsed drain current: 45A Power dissipation: 208W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.11Ω Gate charge: 11nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
 |
AOD1N60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252 Type of transistor: N-MOSFET Mounting: SMD Case: TO252 On-state resistance: 9Ω Power dissipation: 45W Polarisation: unipolar Gate charge: 6.1nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 0.8A |
auf Bestellung 4117 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
AOD1N60 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||
|
|
AOD1N60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252 Type of transistor: N-MOSFET Mounting: SMD Case: TO252 On-state resistance: 9Ω Power dissipation: 45W Polarisation: unipolar Gate charge: 6.1nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 0.8A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4117 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
|
|
AOD1N60 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
|
AOD1R4A70 | Alpha & Omega Semiconductor |
N-Channel Power Transistor |
Produkt ist nicht verfügbar |
|||||||||||
| AOD1R4A70 | ALPHA & OMEGA SEMICONDUCTOR |
AOD1R4A70 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||
|
|
AOD206 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 46A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
|||||||||||
|
|
AOD208 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 54A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
|
AOD210 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
| AOD210 | Alpha & Omega Semiconductor |
|
auf Bestellung 1399 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
|
|
AOD21357 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
| AOD21357 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||||||||||||
|
|
AOD2144 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 62W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 62W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||
|
|
AOD2144 | Alpha & Omega Semiconductor |
N-Channel MOSFET |
Produkt ist nicht verfügbar |
|||||||||||
|
|
AOD2144 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 62W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 62W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
| AOC2412 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 4.5A 4-Pin Alpha DFN
Trans MOSFET N-CH 20V 4.5A 4-Pin Alpha DFN
Produkt ist nicht verfügbar
| AOC2413 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 8V 3.5A 4-Pin Alpha DFN
Trans MOSFET P-CH 8V 3.5A 4-Pin Alpha DFN
Produkt ist nicht verfügbar
| AOC2415 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN
Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN
Produkt ist nicht verfügbar
| AOC2417 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN
Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN
Produkt ist nicht verfügbar
| AOC2421 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 8V 2.5A 4-Pin Alpha DFN T/R
Trans MOSFET P-CH 8V 2.5A 4-Pin Alpha DFN T/R
Produkt ist nicht verfügbar
| AOC2421 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4
Mounting: SMD
Case: DFN4
Polarisation: unipolar
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Power dissipation: 0.6W
Drain-source voltage: -8V
Drain current: -2.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4
Mounting: SMD
Case: DFN4
Polarisation: unipolar
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Power dissipation: 0.6W
Drain-source voltage: -8V
Drain current: -2.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| AOC2421 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4
Mounting: SMD
Case: DFN4
Polarisation: unipolar
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Power dissipation: 0.6W
Drain-source voltage: -8V
Drain current: -2.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4
Mounting: SMD
Case: DFN4
Polarisation: unipolar
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Power dissipation: 0.6W
Drain-source voltage: -8V
Drain current: -2.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOC2422 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 8V 3.5A 4-Pin Alpha DFN
Trans MOSFET N-CH 8V 3.5A 4-Pin Alpha DFN
Produkt ist nicht verfügbar
| AOC2423 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 2A 4-Pin Alpha DFN
Trans MOSFET P-CH 20V 2A 4-Pin Alpha DFN
Produkt ist nicht verfügbar
| AOC2802 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 6A 4-Pin WLCSP
Trans MOSFET N-CH 20V 6A 4-Pin WLCSP
Produkt ist nicht verfügbar
| AOC2804 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| AOC2804 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOC2804B |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.3W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.3W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| AOC2804B |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 6A T/R
Trans MOSFET N-CH 20V 6A T/R
Produkt ist nicht verfügbar
| AOC2804B |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.3W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.3W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOC2806 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4
Mounting: SMD
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.7W
Polarisation: unipolar
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: DFN4
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4
Mounting: SMD
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.7W
Polarisation: unipolar
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: DFN4
Produkt ist nicht verfügbar
| AOC2806 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4
Mounting: SMD
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.7W
Polarisation: unipolar
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: DFN4
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4
Mounting: SMD
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.7W
Polarisation: unipolar
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Case: DFN4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOC3860A |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.5W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.5W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| AOC3860A |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.5W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.5W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOC3862 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
Produkt ist nicht verfügbar
| AOC3862 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOC3868 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN6
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN6
Produkt ist nicht verfügbar
| AOC3868 |
|
Hersteller: Alpha & Omega Semiconductor
12V Common-Drain Dual N-Channel MOSFET
12V Common-Drain Dual N-Channel MOSFET
Produkt ist nicht verfügbar
| AOC3868 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN6
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOC3870A |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.3W
Case: DFN10
Gate-source voltage: ±8V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.3W
Case: DFN10
Gate-source voltage: ±8V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| AOC3870A |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.3W
Case: DFN10
Gate-source voltage: ±8V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.3W
Case: DFN10
Gate-source voltage: ±8V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOC3878 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN10
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 2mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN10
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
| AOC3878 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN10
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 2mΩ
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN10
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 2mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOCA24106E |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain
Mounting: SMD
Case: DFN6
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain
Mounting: SMD
Case: DFN6
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
| AOCA24106E |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain
Mounting: SMD
Case: DFN6
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain
Mounting: SMD
Case: DFN6
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOCA24108E |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.2W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.2W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| AOCA24108E |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH Si 12V 14A 6-Pin Alpha DFN T/R
Trans MOSFET N-CH Si 12V 14A 6-Pin Alpha DFN T/R
Produkt ist nicht verfügbar
| AOCA24108E |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.2W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.2W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOCA32106E |
|
Hersteller: Alpha & Omega Semiconductor
12V Common-Drain Dual N-Channel MOSFET
12V Common-Drain Dual N-Channel MOSFET
Produkt ist nicht verfügbar
| AOCA32317 |
|
Hersteller: Alpha & Omega Semiconductor
LV Common Drain Battery MOSFETS
LV Common Drain Battery MOSFETS
Produkt ist nicht verfügbar
| AOCA36102E |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 22V 30A 10-Pin Alpha DFN T/R
Trans MOSFET N-CH 22V 30A 10-Pin Alpha DFN T/R
Produkt ist nicht verfügbar
| AOCA36116C |
|
Hersteller: Alpha & Omega Semiconductor
Common Drain Dual N Channel MOSFET
Common Drain Dual N Channel MOSFET
Produkt ist nicht verfügbar
| AOCA36116C |
|
Hersteller: Alpha & Omega Semiconductor
Common Drain Dual N Channel MOSFET
Common Drain Dual N Channel MOSFET
Produkt ist nicht verfügbar
| AOD11S60 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
| AOD11S60 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Gate charge: 11nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Gate charge: 11nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| AOD11S60 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
| AOD11S60 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Gate charge: 11nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Gate charge: 11nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| AOD1N60 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 9Ω
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 0.8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 9Ω
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 0.8A
auf Bestellung 4117 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 136+ | 0.53 EUR |
| 191+ | 0.37 EUR |
| 228+ | 0.31 EUR |
| 241+ | 0.3 EUR |
| 2500+ | 0.29 EUR |
| AOD1N60 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| AOD1N60 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 9Ω
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 9Ω
Power dissipation: 45W
Polarisation: unipolar
Gate charge: 6.1nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4117 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 136+ | 0.53 EUR |
| 191+ | 0.37 EUR |
| 228+ | 0.31 EUR |
| 241+ | 0.3 EUR |
| 2500+ | 0.29 EUR |
| AOD1N60 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
| AOD1R4A70 |
|
Hersteller: Alpha & Omega Semiconductor
N-Channel Power Transistor
N-Channel Power Transistor
Produkt ist nicht verfügbar
| AOD1R4A70 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
AOD1R4A70 SMD N channel transistors
AOD1R4A70 SMD N channel transistors
Produkt ist nicht verfügbar
| AOD206 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 46A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 30V 46A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
| AOD208 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 54A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 54A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
| AOD210 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
| AOD21357 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
| AOD21357 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
| AOD2144 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 62W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 62W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 62W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 62W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| AOD2144 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 62W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 62W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 62W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 62W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar