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1.5SMC33CA 1.5SMC33CA ANBON SEMICONDUCTOR (INT'L) LIMITED DS_4530_1.5SMC%20SERIES.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 9000 Stücke:
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3000+0.24 EUR
6000+0.21 EUR
9000+0.2 EUR
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1.5SMC33CA 1.5SMC33CA ANBON SEMICONDUCTOR (INT'L) LIMITED DS_4530_1.5SMC%20SERIES.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 1938 Stücke:
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33+0.65 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.29 EUR
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1N4148W 1N4148W ANBON SEMICONDUCTOR (INT'L) LIMITED 1N4148W.pdf Description: DIODE STANDARD 75V 150MA SOD123
auf Bestellung 84000 Stücke:
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3000+0.03 EUR
6000+0.026 EUR
9000+0.025 EUR
15000+0.023 EUR
21000+0.021 EUR
30000+0.02 EUR
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1N4148W 1N4148W ANBON SEMICONDUCTOR (INT'L) LIMITED 1N4148W.pdf Description: DIODE STANDARD 75V 150MA SOD123
auf Bestellung 167 Stücke:
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1N4148WS 1N4148WS ANBON SEMICONDUCTOR (INT'L) LIMITED DS_4530_1N4148WS.pdf Description: DIODE STANDARD 75V 150MA SOD323
auf Bestellung 108000 Stücke:
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3000+0.03 EUR
6000+0.026 EUR
9000+0.025 EUR
15000+0.023 EUR
21000+0.021 EUR
30000+0.02 EUR
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1N4148WS 1N4148WS ANBON SEMICONDUCTOR (INT'L) LIMITED DS_4530_1N4148WS.pdf Description: DIODE STANDARD 75V 150MA SOD323
auf Bestellung 1976 Stücke:
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112+0.19 EUR
218+0.096 EUR
353+0.06 EUR
500+0.043 EUR
1000+0.037 EUR
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1N4148WT 1N4148WT ANBON SEMICONDUCTOR (INT'L) LIMITED 1N4148WT.pdf Description: DIODE STANDARD 75V 150MA SOD523
auf Bestellung 8000 Stücke:
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8000+0.027 EUR
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1N4148WT 1N4148WT ANBON SEMICONDUCTOR (INT'L) LIMITED 1N4148WT.pdf Description: DIODE STANDARD 75V 150MA SOD523
auf Bestellung 9871 Stücke:
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112+0.19 EUR
197+0.11 EUR
320+0.065 EUR
500+0.046 EUR
1000+0.04 EUR
2000+0.036 EUR
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2N7002EY 2N7002EY ANBON SEMICONDUCTOR (INT'L) LIMITED 2N7002EY.pdf Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 57000 Stücke:
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3000+0.049 EUR
6000+0.044 EUR
9000+0.04 EUR
15000+0.038 EUR
21000+0.036 EUR
30000+0.033 EUR
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2N7002EY 2N7002EY ANBON SEMICONDUCTOR (INT'L) LIMITED 2N7002EY.pdf Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 227 Stücke:
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84+0.25 EUR
134+0.15 EUR
220+0.095 EUR
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30SQ045 30SQ045 ANBON SEMICONDUCTOR (INT'L) LIMITED 30SQ045.pdf Description: DIODE SCHOTTKY 45V 30A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 6000 Stücke:
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1500+0.69 EUR
3000+0.63 EUR
4500+0.61 EUR
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30SQ045 30SQ045 ANBON SEMICONDUCTOR (INT'L) LIMITED 30SQ045.pdf Description: DIODE SCHOTTKY 45V 30A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 1291 Stücke:
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14+1.55 EUR
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500+0.8 EUR
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40SQ045 40SQ045 ANBON SEMICONDUCTOR (INT'L) LIMITED 40SQ045.pdf Description: DIODE SCHOTTKY 45V 40A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 2078 Stücke:
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500+1.15 EUR
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40SQ045 40SQ045 ANBON SEMICONDUCTOR (INT'L) LIMITED 40SQ045.pdf Description: DIODE SCHOTTKY 45V 40A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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AS1M025120P AS1M025120P ANBON SEMICONDUCTOR (INT'L) LIMITED AS1M025120P.pdf Description: N-CHANNEL SILICON CARBIDE POWER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 1000 V
auf Bestellung 124 Stücke:
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1+57.57 EUR
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AS1M025120T AS1M025120T ANBON SEMICONDUCTOR (INT'L) LIMITED AS1M025120T.pdf Description: N-CHANNEL SILICON CARBIDE POWER
Package / Case: TO-247-4
Packaging: Tube
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 15mA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
auf Bestellung 13 Stücke:
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AS1M040120T AS1M040120T ANBON SEMICONDUCTOR (INT'L) LIMITED AS1M040120T.pdf Description: N-CHANNEL SILICON CARBIDE POWER
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V
auf Bestellung 1 Stücke:
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1+41.83 EUR
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AS1M080120P AS1M080120P ANBON SEMICONDUCTOR (INT'L) LIMITED AS1M080120P.pdf Description: N-CHANNEL SILICON CARBIDE POWER
Input Capacitance (Ciss) (Max) @ Vds: 1475 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 34 Stücke:
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1+24.78 EUR
30+15.04 EUR
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AS2302 AS2302 ANBON SEMICONDUCTOR (INT'L) LIMITED AS2302.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.06 EUR
6000+0.052 EUR
9000+0.049 EUR
15000+0.045 EUR
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AS2302 AS2302 ANBON SEMICONDUCTOR (INT'L) LIMITED AS2302.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 2867 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
115+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.071 EUR
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AS2312 AS2312 ANBON SEMICONDUCTOR (INT'L) LIMITED AS2312.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.083 EUR
6000+0.075 EUR
9000+0.071 EUR
15000+0.067 EUR
21000+0.063 EUR
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AS2312 AS2312 ANBON SEMICONDUCTOR (INT'L) LIMITED AS2312.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1661 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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AS2324 AS2324 ANBON SEMICONDUCTOR (INT'L) LIMITED AS2324.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.09 EUR
6000+0.083 EUR
9000+0.069 EUR
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AS2324 AS2324 ANBON SEMICONDUCTOR (INT'L) LIMITED AS2324.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 5029 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.55 EUR
58+0.37 EUR
117+0.18 EUR
500+0.15 EUR
1000+0.1 EUR
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AS2M040120P AS2M040120P ANBON SEMICONDUCTOR (INT'L) LIMITED AS2M040120P.pdf Description: N-CHANNEL SILICON CARBIDE POWER
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 10mA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.78 EUR
30+26.55 EUR
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AS3400 AS3400 ANBON SEMICONDUCTOR (INT'L) LIMITED AS3400.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
Produkt ist nicht verfügbar
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AS3400 AS3400 ANBON SEMICONDUCTOR (INT'L) LIMITED AS3400.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
auf Bestellung 5160 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.39 EUR
83+0.25 EUR
134+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
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AS3401 AS3401 ANBON SEMICONDUCTOR (INT'L) LIMITED AS3401.pdf Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3080 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.42 EUR
81+0.26 EUR
131+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
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AS3401 AS3401 ANBON SEMICONDUCTOR (INT'L) LIMITED AS3401.pdf Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.086 EUR
6000+0.077 EUR
9000+0.073 EUR
15000+0.067 EUR
21000+0.064 EUR
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AS3D020065A AS3D020065A ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D020065A.pdf Description: 650V,20A SILICON CARBIDE SCHOTTK
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1190pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.03 EUR
50+5.07 EUR
100+4.66 EUR
Mindestbestellmenge: 3 Stücke
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AS3D020120C AS3D020120C ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D020120C.pdf Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.4 EUR
10+10.64 EUR
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AS3D020120P2 AS3D020120P2 ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D020120P2.pdf Description: DIODE ARR SIC 1200V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.86 EUR
30+7.88 EUR
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AS3D030065C AS3D030065C ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D030065C.pdf Description: DIODE SIL CARB 650V 35A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1805pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.62 EUR
30+9.7 EUR
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AS3D030120P2 AS3D030120P2 ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D030120P2.pdf Description: DIODE ARR SIC 1200V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.98 EUR
30+11.83 EUR
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AS3D040120P2 AS3D040120P2 ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D040120P2.pdf Description: 1200V,40A SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 52A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.99 EUR
10+20.78 EUR
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AS6004 AS6004 ANBON SEMICONDUCTOR (INT'L) LIMITED AS6004.pdf Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
6000+0.18 EUR
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AS6004 AS6004 ANBON SEMICONDUCTOR (INT'L) LIMITED AS6004.pdf Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.88 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
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ASB05LCDF ASB05LCDF ANBON SEMICONDUCTOR (INT'L) LIMITED ASB05LCDF-Q1.pdf Description: TVS DIODE 5VWM 22VC DFN2L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN-2L (0402)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 80W
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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ASB05LCDF ASB05LCDF ANBON SEMICONDUCTOR (INT'L) LIMITED ASB05LCDF-Q1.pdf Description: TVS DIODE 5VWM 22VC DFN2L
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN-2L (0402)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 7812 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.21 EUR
455+0.046 EUR
556+0.038 EUR
599+0.035 EUR
667+0.031 EUR
721+0.029 EUR
1000+0.027 EUR
5000+0.023 EUR
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ASZD020120C ASZD020120C ANBON SEMICONDUCTOR (INT'L) LIMITED Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Tape & Reel (TR)
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
30+4 EUR
Mindestbestellmenge: 30 Stücke
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ASZD020120C ASZD020120C ANBON SEMICONDUCTOR (INT'L) LIMITED Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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B5819WS B5819WS ANBON SEMICONDUCTOR (INT'L) LIMITED B5819WS.pdf Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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B5819WS B5819WS ANBON SEMICONDUCTOR (INT'L) LIMITED B5819WS.pdf Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
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BAV21W BAV21W ANBON SEMICONDUCTOR (INT'L) LIMITED BAV19W%20thru%20BAV21W.pdf Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.032 EUR
6000+0.029 EUR
9000+0.026 EUR
Mindestbestellmenge: 3000 Stücke
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BAV21W BAV21W ANBON SEMICONDUCTOR (INT'L) LIMITED BAV19W%20thru%20BAV21W.pdf Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
auf Bestellung 1329 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.19 EUR
205+0.1 EUR
333+0.063 EUR
500+0.045 EUR
1000+0.039 EUR
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BCP56-16 BCP56-16 ANBON SEMICONDUCTOR (INT'L) LIMITED BCP56-16.pdf Description: TRANS NPN 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.6 W
Produkt ist nicht verfügbar
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BCP56-16 BCP56-16 ANBON SEMICONDUCTOR (INT'L) LIMITED BCP56-16.pdf Description: TRANS NPN 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.6 W
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.69 EUR
50+0.43 EUR
100+0.26 EUR
Mindestbestellmenge: 31 Stücke
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BSS123 BSS123 ANBON SEMICONDUCTOR (INT'L) LIMITED DS_4530_BSS123.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.048 EUR
6000+0.043 EUR
9000+0.039 EUR
15000+0.037 EUR
21000+0.035 EUR
30000+0.033 EUR
Mindestbestellmenge: 3000 Stücke
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BSS123 BSS123 ANBON SEMICONDUCTOR (INT'L) LIMITED DS_4530_BSS123.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
139+0.15 EUR
226+0.093 EUR
Mindestbestellmenge: 84 Stücke
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BSS138 BSS138 ANBON SEMICONDUCTOR (INT'L) LIMITED BSS138.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.045 EUR
6000+0.04 EUR
9000+0.038 EUR
15000+0.035 EUR
21000+0.033 EUR
30000+0.031 EUR
Mindestbestellmenge: 3000 Stücke
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BSS138 BSS138 ANBON SEMICONDUCTOR (INT'L) LIMITED BSS138.pdf Description: N-CHANNEL ENHANCEMENT MODE MOSFE
auf Bestellung 1197 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.23 EUR
145+0.14 EUR
237+0.088 EUR
500+0.064 EUR
1000+0.056 EUR
Mindestbestellmenge: 91 Stücke
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BSS84 BSS84 ANBON SEMICONDUCTOR (INT'L) LIMITED BSS84.pdf Description: P-CHANNEL ENHANCEMENT MODE MOSFE
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.063 EUR
6000+0.056 EUR
9000+0.052 EUR
15000+0.049 EUR
21000+0.046 EUR
30000+0.044 EUR
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BSS84 BSS84 ANBON SEMICONDUCTOR (INT'L) LIMITED BSS84.pdf Description: P-CHANNEL ENHANCEMENT MODE MOSFE
auf Bestellung 1816 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
108+0.19 EUR
175+0.12 EUR
500+0.087 EUR
1000+0.076 EUR
Mindestbestellmenge: 67 Stücke
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ESD3Z5.0C ESD3Z5.0C ANBON SEMICONDUCTOR (INT'L) LIMITED ESD3Z5.0C-Q1.pdf Description: TVS DIODE 5V VBR MIN 6V SOD-32
Applications: General Purpose
Operating Temperature: 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 24A
Capacitance @ Frequency: 260pF @ 1MHz (Max)
Produkt ist nicht verfügbar
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ESD3Z5.0C ESD3Z5.0C ANBON SEMICONDUCTOR (INT'L) LIMITED ESD3Z5.0C-Q1.pdf Description: TVS DIODE 5V VBR MIN 6V SOD-32
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 24A
Capacitance @ Frequency: 260pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Voltage - Clamping (Max) @ Ipp: 17V
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.19 EUR
186+0.11 EUR
193+0.11 EUR
217+0.096 EUR
234+0.09 EUR
262+0.08 EUR
500+0.067 EUR
1000+0.063 EUR
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ESD5Z5.0 ESD5Z5.0 ANBON SEMICONDUCTOR (INT'L) LIMITED ESD5Z5.0-Q1.pdf Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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ESD5Z5.0 ESD5Z5.0 ANBON SEMICONDUCTOR (INT'L) LIMITED ESD5Z5.0-Q1.pdf Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
auf Bestellung 798 Stücke:
Lieferzeit 10-14 Tag (e)
94+0.23 EUR
154+0.13 EUR
251+0.083 EUR
500+0.061 EUR
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ESD5Z5.0C ESD5Z5.0C ANBON SEMICONDUCTOR (INT'L) LIMITED ESD5Z5.0C-Q1.pdf Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
auf Bestellung 1351 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
143+0.14 EUR
233+0.09 EUR
500+0.065 EUR
1000+0.057 EUR
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ESD5Z5.0C ESD5Z5.0C ANBON SEMICONDUCTOR (INT'L) LIMITED ESD5Z5.0C-Q1.pdf Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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GBLC05C GBLC05C ANBON SEMICONDUCTOR (INT'L) LIMITED GBLC05C-Q1.pdf Description: TVS DIODE 5VWM 20VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 350W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.09 EUR
6000+0.081 EUR
9000+0.076 EUR
15000+0.07 EUR
Mindestbestellmenge: 3000 Stücke
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1.5SMC33CA DS_4530_1.5SMC%20SERIES.pdf
1.5SMC33CA
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.21 EUR
9000+0.2 EUR
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1.5SMC33CA DS_4530_1.5SMC%20SERIES.pdf
1.5SMC33CA
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 28.2VWM 45.7V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 1938 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
33+0.65 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.29 EUR
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1N4148W 1N4148W.pdf
1N4148W
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD123
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.03 EUR
6000+0.026 EUR
9000+0.025 EUR
15000+0.023 EUR
21000+0.021 EUR
30000+0.02 EUR
Mindestbestellmenge: 3000 Stücke
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1N4148W 1N4148W.pdf
1N4148W
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD123
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
Mindestbestellmenge: 112 Stücke
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1N4148WS DS_4530_1N4148WS.pdf
1N4148WS
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD323
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.03 EUR
6000+0.026 EUR
9000+0.025 EUR
15000+0.023 EUR
21000+0.021 EUR
30000+0.02 EUR
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1N4148WS DS_4530_1N4148WS.pdf
1N4148WS
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD323
auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
218+0.096 EUR
353+0.06 EUR
500+0.043 EUR
1000+0.037 EUR
Mindestbestellmenge: 112 Stücke
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1N4148WT 1N4148WT.pdf
1N4148WT
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD523
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.027 EUR
Mindestbestellmenge: 8000 Stücke
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1N4148WT 1N4148WT.pdf
1N4148WT
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 75V 150MA SOD523
auf Bestellung 9871 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
197+0.11 EUR
320+0.065 EUR
500+0.046 EUR
1000+0.04 EUR
2000+0.036 EUR
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2N7002EY 2N7002EY.pdf
2N7002EY
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.049 EUR
6000+0.044 EUR
9000+0.04 EUR
15000+0.038 EUR
21000+0.036 EUR
30000+0.033 EUR
Mindestbestellmenge: 3000 Stücke
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2N7002EY 2N7002EY.pdf
2N7002EY
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
134+0.15 EUR
220+0.095 EUR
Mindestbestellmenge: 84 Stücke
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30SQ045 30SQ045.pdf
30SQ045
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 45V 30A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.69 EUR
3000+0.63 EUR
4500+0.61 EUR
Mindestbestellmenge: 1500 Stücke
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30SQ045 30SQ045.pdf
30SQ045
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 45V 30A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 1291 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
14+1.55 EUR
100+1.02 EUR
500+0.8 EUR
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40SQ045 40SQ045.pdf
40SQ045
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 45V 40A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 2078 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.42 EUR
10+2.17 EUR
100+1.46 EUR
500+1.15 EUR
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40SQ045 40SQ045.pdf
40SQ045
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 45V 40A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Produkt ist nicht verfügbar
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AS1M025120P AS1M025120P.pdf
AS1M025120P
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 1000 V
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+57.57 EUR
30+44.91 EUR
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AS1M025120T AS1M025120T.pdf
AS1M025120T
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Package / Case: TO-247-4
Packaging: Tube
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 15mA
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+67.77 EUR
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AS1M040120T AS1M040120T.pdf
AS1M040120T
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+41.83 EUR
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AS1M080120P AS1M080120P.pdf
AS1M080120P
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Input Capacitance (Ciss) (Max) @ Vds: 1475 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.78 EUR
30+15.04 EUR
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AS2302 AS2302.pdf
AS2302
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.06 EUR
6000+0.052 EUR
9000+0.049 EUR
15000+0.045 EUR
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AS2302 AS2302.pdf
AS2302
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.81 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 2867 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
115+0.18 EUR
186+0.11 EUR
500+0.082 EUR
1000+0.071 EUR
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AS2312 AS2312.pdf
AS2312
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.083 EUR
6000+0.075 EUR
9000+0.071 EUR
15000+0.067 EUR
21000+0.063 EUR
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AS2312 AS2312.pdf
AS2312
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1661 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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AS2324 AS2324.pdf
AS2324
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.09 EUR
6000+0.083 EUR
9000+0.069 EUR
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AS2324 AS2324.pdf
AS2324
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 5029 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
58+0.37 EUR
117+0.18 EUR
500+0.15 EUR
1000+0.1 EUR
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AS2M040120P AS2M040120P.pdf
AS2M040120P
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SILICON CARBIDE POWER
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 10mA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+41.78 EUR
30+26.55 EUR
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AS3400 AS3400.pdf
AS3400
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
Produkt ist nicht verfügbar
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AS3400 AS3400.pdf
AS3400
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
auf Bestellung 5160 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
83+0.25 EUR
134+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
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AS3401 AS3401.pdf
AS3401
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3080 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
81+0.26 EUR
131+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
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AS3401 AS3401.pdf
AS3401
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.086 EUR
6000+0.077 EUR
9000+0.073 EUR
15000+0.067 EUR
21000+0.064 EUR
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AS3D020065A AS3D020065A.pdf
AS3D020065A
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 650V,20A SILICON CARBIDE SCHOTTK
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1190pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.03 EUR
50+5.07 EUR
100+4.66 EUR
Mindestbestellmenge: 3 Stücke
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AS3D020120C AS3D020120C.pdf
AS3D020120C
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 0V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.4 EUR
10+10.64 EUR
Mindestbestellmenge: 2 Stücke
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AS3D020120P2 AS3D020120P2.pdf
AS3D020120P2
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE ARR SIC 1200V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.86 EUR
30+7.88 EUR
Mindestbestellmenge: 2 Stücke
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AS3D030065C AS3D030065C.pdf
AS3D030065C
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SIL CARB 650V 35A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1805pF @ 0V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.62 EUR
30+9.7 EUR
Mindestbestellmenge: 2 Stücke
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AS3D030120P2 AS3D030120P2.pdf
AS3D030120P2
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE ARR SIC 1200V 42A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 42A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.98 EUR
30+11.83 EUR
Mindestbestellmenge: 2 Stücke
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AS3D040120P2 AS3D040120P2.pdf
AS3D040120P2
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 1200V,40A SILICON CARBIDE SCHOTT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 52A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.99 EUR
10+20.78 EUR
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AS6004 AS6004.pdf
AS6004
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
6000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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AS6004 AS6004.pdf
AS6004
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
39+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 24 Stücke
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ASB05LCDF ASB05LCDF-Q1.pdf
ASB05LCDF
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 22VC DFN2L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN-2L (0402)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 80W
Power Line Protection: No
Produkt ist nicht verfügbar
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ASB05LCDF ASB05LCDF-Q1.pdf
ASB05LCDF
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 22VC DFN2L
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: DVI, Telecom, USB
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN-2L (0402)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 7812 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
100+0.21 EUR
455+0.046 EUR
556+0.038 EUR
599+0.035 EUR
667+0.031 EUR
721+0.029 EUR
1000+0.027 EUR
5000+0.023 EUR
Mindestbestellmenge: 100 Stücke
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ASZD020120C
ASZD020120C
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Tape & Reel (TR)
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+4 EUR
Mindestbestellmenge: 30 Stücke
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ASZD020120C
ASZD020120C
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: 1200V,20A SILICON CARBIDE SCHOTT
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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B5819WS B5819WS.pdf
B5819WS
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
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B5819WS B5819WS.pdf
B5819WS
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Produkt ist nicht verfügbar
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BAV21W BAV19W%20thru%20BAV21W.pdf
BAV21W
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.032 EUR
6000+0.029 EUR
9000+0.026 EUR
Mindestbestellmenge: 3000 Stücke
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BAV21W BAV19W%20thru%20BAV21W.pdf
BAV21W
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: DIODE STANDARD 250V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 250 V
auf Bestellung 1329 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
205+0.1 EUR
333+0.063 EUR
500+0.045 EUR
1000+0.039 EUR
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BCP56-16 BCP56-16.pdf
BCP56-16
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TRANS NPN 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.6 W
Produkt ist nicht verfügbar
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BCP56-16 BCP56-16.pdf
BCP56-16
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TRANS NPN 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.6 W
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
50+0.43 EUR
100+0.26 EUR
Mindestbestellmenge: 31 Stücke
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BSS123 DS_4530_BSS123.pdf
BSS123
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.048 EUR
6000+0.043 EUR
9000+0.039 EUR
15000+0.037 EUR
21000+0.035 EUR
30000+0.033 EUR
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BSS123 DS_4530_BSS123.pdf
BSS123
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 50 V
auf Bestellung 428 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
139+0.15 EUR
226+0.093 EUR
Mindestbestellmenge: 84 Stücke
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BSS138 BSS138.pdf
BSS138
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.045 EUR
6000+0.04 EUR
9000+0.038 EUR
15000+0.035 EUR
21000+0.033 EUR
30000+0.031 EUR
Mindestbestellmenge: 3000 Stücke
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BSS138 BSS138.pdf
BSS138
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL ENHANCEMENT MODE MOSFE
auf Bestellung 1197 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
145+0.14 EUR
237+0.088 EUR
500+0.064 EUR
1000+0.056 EUR
Mindestbestellmenge: 91 Stücke
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BSS84 BSS84.pdf
BSS84
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.063 EUR
6000+0.056 EUR
9000+0.052 EUR
15000+0.049 EUR
21000+0.046 EUR
30000+0.044 EUR
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BSS84 BSS84.pdf
BSS84
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: P-CHANNEL ENHANCEMENT MODE MOSFE
auf Bestellung 1816 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
108+0.19 EUR
175+0.12 EUR
500+0.087 EUR
1000+0.076 EUR
Mindestbestellmenge: 67 Stücke
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ESD3Z5.0C ESD3Z5.0C-Q1.pdf
ESD3Z5.0C
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5V VBR MIN 6V SOD-32
Applications: General Purpose
Operating Temperature: 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 24A
Capacitance @ Frequency: 260pF @ 1MHz (Max)
Produkt ist nicht verfügbar
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ESD3Z5.0C ESD3Z5.0C-Q1.pdf
ESD3Z5.0C
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5V VBR MIN 6V SOD-32
Power Line Protection: No
Power - Peak Pulse: 320W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 24A
Capacitance @ Frequency: 260pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Voltage - Clamping (Max) @ Ipp: 17V
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
186+0.11 EUR
193+0.11 EUR
217+0.096 EUR
234+0.09 EUR
262+0.08 EUR
500+0.067 EUR
1000+0.063 EUR
Mindestbestellmenge: 112 Stücke
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ESD5Z5.0 ESD5Z5.0-Q1.pdf
ESD5Z5.0
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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ESD5Z5.0 ESD5Z5.0-Q1.pdf
ESD5Z5.0
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
auf Bestellung 798 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
94+0.23 EUR
154+0.13 EUR
251+0.083 EUR
500+0.061 EUR
Mindestbestellmenge: 94 Stücke
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ESD5Z5.0C ESD5Z5.0C-Q1.pdf
ESD5Z5.0C
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
auf Bestellung 1351 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
143+0.14 EUR
233+0.09 EUR
500+0.065 EUR
1000+0.057 EUR
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ESD5Z5.0C ESD5Z5.0C-Q1.pdf
ESD5Z5.0C
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 18.6VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 18.6V
Power - Peak Pulse: 174W
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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GBLC05C GBLC05C-Q1.pdf
GBLC05C
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: TVS DIODE 5VWM 20VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 350W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.09 EUR
6000+0.081 EUR
9000+0.076 EUR
15000+0.07 EUR
Mindestbestellmenge: 3000 Stücke
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