Produkte > CENTRAL SEMICONDUCTOR CORP > Alle Produkte des Herstellers CENTRAL SEMICONDUCTOR CORP (7892) > Seite 118 nach 132
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MPSA44 TRE PBFREE | Central Semiconductor Corp |
Description: 400V 300MA 625MW TH TRANSISTOR-S Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Frequency - Transition: 20MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 625 mW |
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MPSA44 TIN/LEAD | Central Semiconductor Corp |
Description: 400V 300MA 625MW TH TRANSISTOR-S Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Frequency - Transition: 20MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 625 mW |
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MPSA44 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 400V 300MA 625MW TH TRANSISTOR-S Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Frequency - Transition: 20MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 625 mW |
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| 2N4403 TRE PBFREE | Central Semiconductor Corp |
 Description: 40V 600MA 625MW TH TRANSISTOR-SMPackaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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| 2N4403 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 40V 600MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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2N4403 TIN/LEAD | Central Semiconductor Corp |
Description: 40V 600MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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2N4403 APM PBFREE | Central Semiconductor Corp |
Description: 40V 600MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 40 V |
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2N4403 APM TIN/LEAD | Central Semiconductor Corp |
Description: 40V 600MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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| 1N5233B BK PBFREE | Central Semiconductor Corp |
Description: 6V 500MW TH DIODE-ZENER SINGLE: Packaging: Box |
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| 1N5233B TR TIN/LEAD | Central Semiconductor Corp |
Description: 6V 500MW TH DIODE-ZENER SINGLE: Packaging: Tape & Reel (TR) |
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| MPSA13 TRE PBFREE | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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| MPSA13 TRA TIN/LEAD | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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MPSA13 TIN/LEAD | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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| MPSA13 TRA PBFREE | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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MPSA13 PBFREE | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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MPSA13 APM TIN/LEAD | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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| MPSA13 APP PBFREE | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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MPSA13 APM PBFREE | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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| MPSA13 APP TIN/LEAD | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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| MPSA13 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
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1N5818 TR PBFREE | Central Semiconductor Corp |
Description: 1A 30V TH RECTIFIER-SCHOTTKY (>= Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
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1N5818 BK PBFREE | Central Semiconductor Corp |
Description: 1A 30V TH RECTIFIER-SCHOTTKY (>= Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
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BRX47 PBFREE | Central Semiconductor Corp |
Description: SCR 200V 800MA TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 µA Supplier Device Package: TO-92-3 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 200 V |
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| BRX44 TRE PBFREE | Central Semiconductor Corp |
Description: .8A 30V TH SCR Packaging: Tape & Reel (TR) |
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| BRX44 APM PBFREE | Central Semiconductor Corp |
Description: .8A 30V TH SCR Packaging: Tape & Box (TB) |
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| BRX45 TRE PBFREE | Central Semiconductor Corp |
Description: .8A 60V TH SCR Packaging: Tape & Reel (TR) |
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| BRX45 TRE TIN/LEAD | Central Semiconductor Corp |
Description: .8A 60V TH SCR Packaging: Tape & Reel (TR) |
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| BRX44 TIN/LEAD | Central Semiconductor Corp |
Description: .8A 30V TH SCR Packaging: Box |
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| BRX48 TIN/LEAD | Central Semiconductor Corp |
Description: .8A 300V TH SCR Packaging: Box |
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| BRX47 APM TIN/LEAD | Central Semiconductor Corp |
Description: .8A 200V TH SCR Packaging: Tape & Box (TB) |
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| BRX45 TIN/LEAD | Central Semiconductor Corp |
Description: .8A 60V TH SCR Packaging: Box |
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BRX49 PBFREE | Central Semiconductor Corp |
Description: 800MA 400V TH SCR Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz Current - On State (It (AV)) (Max): 1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 µA Supplier Device Package: TO-92-3 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
Produkt ist nicht verfügbar |
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BRX49 APM TIN/LEAD | Central Semiconductor Corp |
Description: 800MA 400V TH SCR Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz Current - On State (It (AV)) (Max): 1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 µA Supplier Device Package: TO-92-3 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
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| BRX45 APM PBFREE | Central Semiconductor Corp |
Description: .8A 60V TH SCR Packaging: Tape & Box (TB) |
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| BRX44 APM TIN/LEAD | Central Semiconductor Corp |
Description: .8A 30V TH SCR Packaging: Tape & Box (TB) |
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| BRX44 TRE TIN/LEAD | Central Semiconductor Corp |
Description: .8A 30V TH SCR Packaging: Tape & Reel (TR) |
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| BRX47 TIN/LEAD | Central Semiconductor Corp |
Description: .8A 200V TH SCR Packaging: Box |
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| BRX48 APM TIN/LEAD | Central Semiconductor Corp |
Description: .8A 300V TH SCR Packaging: Tape & Box (TB) |
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| BRX45 APM TIN/LEAD | Central Semiconductor Corp |
Description: .8A 60V TH SCR Packaging: Tape & Box (TB) |
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| BRX47 TRE PBFREE | Central Semiconductor Corp |
Description: .8A 200V TH SCR Packaging: Tape & Reel (TR) |
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| BRX48 APM PBFREE | Central Semiconductor Corp |
Description: .8A 300V TH SCR Packaging: Tape & Box (TB) |
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| BRX47 TRE TIN/LEAD | Central Semiconductor Corp |
Description: .8A 200V TH SCR Packaging: Tape & Reel (TR) |
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| BRX47 APM PBFREE | Central Semiconductor Corp |
Description: .8A 200V TH SCR Packaging: Tape & Box (TB) |
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BRX49 APM PBFREE | Central Semiconductor Corp |
Description: 800MA 400V TH SCR Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz Current - On State (It (AV)) (Max): 1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 µA Supplier Device Package: TO-92-3 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
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| BRX48 PBFREE | Central Semiconductor Corp |
Description: .8A 300V TH SCR Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BRX48 TRE PBFREE | Central Semiconductor Corp |
Description: .8A 300V TH SCR Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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BRX49 TRE PBFREE | Central Semiconductor Corp |
Description: 800MA 400V TH SCR Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz Current - On State (It (AV)) (Max): 1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 µA Supplier Device Package: TO-92-3 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BRX48 TRE TIN/LEAD | Central Semiconductor Corp |
Description: .8A 300V TH SCR Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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BRX49 TIN/LEAD | Central Semiconductor Corp |
Description: 800MA 400V TH SCR Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz Current - On State (It (AV)) (Max): 1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 µA Supplier Device Package: TO-92-3 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
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BRX49 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 800MA 400V TH SCR Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz Current - On State (It (AV)) (Max): 1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 µA Supplier Device Package: TO-92-3 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
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1N5819 TR PBFREE | Central Semiconductor Corp |
Description: TH RECTIFIER-SCHOTTKY (>=1A) SIN Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
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| BZV55C5V1 TR PBFREE | Central Semiconductor Corp |
Description: 5.1V 500MW SMD DIODE-ZENER SINGL Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-80 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
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1SMB10CA TR13 TIN/LEAD | Central Semiconductor Corp |
Description: TVS DIODE 10VWM 17VC SMB Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 35.3A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 600W Power Line Protection: No |
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1N4744A TR TIN/LEAD | Central Semiconductor Corp |
Description: 15V 1W TH DIODE-ZENER SINGLE: ST Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V |
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1N4744A BK TIN/LEAD | Central Semiconductor Corp |
Description: 15V 1W TH DIODE-ZENER SINGLE: ST Tolerance: ±5% Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V |
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1N4739A BK PBFREE | Central Semiconductor Corp |
Description: 9.1V 1W TH DIODE-ZENER SINGLE: S Tolerance: ±5% Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 7 V |
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MPS404A TRE PBFREE | Central Semiconductor Corp |
Description: 35V 150MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 35 V Power - Max: 625 mW |
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MPS404A TIN/LEAD | Central Semiconductor Corp |
Description: 35V 150MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 35 V Power - Max: 625 mW |
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MPS404A APM TIN/LEAD | Central Semiconductor Corp |
Description: 35V 150MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 35 V Power - Max: 625 mW |
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MPS404A TRE TIN/LEAD | Central Semiconductor Corp |
Description: 35V 150MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 35 V Power - Max: 625 mW |
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| MPSA44 TRE PBFREE |
Hersteller: Central Semiconductor Corp
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSA44 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSA44 TRE TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Description: 400V 300MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N4403 TRE PBFREE |
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Hersteller: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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Stück im Wert von UAH
| 2N4403 TRE TIN/LEAD |
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Hersteller: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2N4403 TIN/LEAD |
|
Hersteller: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 2N4403 APM PBFREE |
Hersteller: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 40 V
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Stück im Wert von UAH
| 2N4403 APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 1N5233B TR TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 6V 500MW TH DIODE-ZENER SINGLE:
Packaging: Tape & Reel (TR)
Description: 6V 500MW TH DIODE-ZENER SINGLE:
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MPSA13 TRE PBFREE |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSA13 TRA TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSA13 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSA13 TRA PBFREE |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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| MPSA13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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| MPSA13 APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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| MPSA13 APP PBFREE |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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| MPSA13 APM PBFREE |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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| MPSA13 APP TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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| MPSA13 TRE TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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| 1N5818 TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 1A 30V TH RECTIFIER-SCHOTTKY (>=
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: 1A 30V TH RECTIFIER-SCHOTTKY (>=
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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| 1N5818 BK PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 1A 30V TH RECTIFIER-SCHOTTKY (>=
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: 1A 30V TH RECTIFIER-SCHOTTKY (>=
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
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| BRX47 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: SCR 200V 800MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 200 V
Description: SCR 200V 800MA TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 200 V
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| BRX49 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 800MA 400V TH SCR
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: 800MA 400V TH SCR
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
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| BRX49 APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 800MA 400V TH SCR
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: 800MA 400V TH SCR
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
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| BRX49 APM PBFREE |
Hersteller: Central Semiconductor Corp
Description: 800MA 400V TH SCR
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: 800MA 400V TH SCR
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
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| BRX49 TRE PBFREE |
Hersteller: Central Semiconductor Corp
Description: 800MA 400V TH SCR
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: 800MA 400V TH SCR
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
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| BRX49 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 800MA 400V TH SCR
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: 800MA 400V TH SCR
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
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Stück im Wert von UAH
| BRX49 TRE TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 800MA 400V TH SCR
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: 800MA 400V TH SCR
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
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Stück im Wert von UAH
| 1N5819 TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: TH RECTIFIER-SCHOTTKY (>=1A) SIN
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: TH RECTIFIER-SCHOTTKY (>=1A) SIN
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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| BZV55C5V1 TR PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 5.1V 500MW SMD DIODE-ZENER SINGL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: 5.1V 500MW SMD DIODE-ZENER SINGL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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| 1SMB10CA TR13 TIN/LEAD |
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Hersteller: Central Semiconductor Corp
Description: TVS DIODE 10VWM 17VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 10VWM 17VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
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| 1N4744A TR TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 15V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Description: 15V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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| 1N4744A BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 15V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Description: 15V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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| 1N4739A BK PBFREE |
Hersteller: Central Semiconductor Corp
Description: 9.1V 1W TH DIODE-ZENER SINGLE: S
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Description: 9.1V 1W TH DIODE-ZENER SINGLE: S
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
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| MPS404A TRE PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 35V 150MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
Description: 35V 150MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
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| MPS404A TIN/LEAD |
|
Hersteller: Central Semiconductor Corp
Description: 35V 150MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
Description: 35V 150MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
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Stück im Wert von UAH
| MPS404A APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 35V 150MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
Description: 35V 150MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
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Stück im Wert von UAH
| MPS404A TRE TIN/LEAD |
|
Hersteller: Central Semiconductor Corp
Description: 35V 150MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
Description: 35V 150MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 24mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 12mA, 150mV
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
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