Produkte > CENTRAL SEMICONDUCTOR CORP > Alle Produkte des Herstellers CENTRAL SEMICONDUCTOR CORP (7778) > Seite 123 nach 130
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2N3860 TRE PBFREE | Central Semiconductor Corp |
Description: 30V 100MA 360MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V Frequency - Transition: 90MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
2N3860 TIN/LEAD | Central Semiconductor Corp |
Description: 30V 100MA 360MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V Frequency - Transition: 90MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
2N3860 APM TIN/LEAD | Central Semiconductor Corp |
Description: 30V 100MA 360MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V Frequency - Transition: 90MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
2N3860 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 30V 100MA 360MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V Frequency - Transition: 90MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
CZTA44 TR PBFREE | Central Semiconductor Corp |
Description: 400V 300MA 2W SMD TRANSISTOR-SMA Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 300mA DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 20MHz Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| 2N6551 PBFREE | Central Semiconductor Corp |
Description: 60V 1A 2W TH TRANSISTOR-BIPOLAR Packaging: Tube Package / Case: TO-202 Long Tab Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 1V Frequency - Transition: 75MHz Supplier Device Package: TO-202 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 10 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
CMSH1-40HE TR13 PBFREE | Central Semiconductor Corp |
Description: 1A 40V SMD RECTIFIER-SCHOTTKY (> Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 116pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
CMSH1-60HE TR13 PBFREE | Central Semiconductor Corp |
Description: 1A 60V SMD RECTIFIER-SCHOTTKY (> Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 116pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
CMSH1-100HE TR13 PBFREE | Central Semiconductor Corp |
Description: 1A 100V SMD RECTIFIER-SCHOTTKY ( Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 116pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
CMSH1-80HE TR13 PBFREE | Central Semiconductor Corp |
 Description: 1A 80V SMD RECTIFIER-SCHOTTKY (>Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 116pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 80 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| D40K2 PBFREE | Central Semiconductor Corp |
Description: 2A 50V TH TRANSISTOR-BIPOLAR POW Packaging: Tube Package / Case: TO-202 Long Tab Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 1.5A Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V Frequency - Transition: 75MHz Supplier Device Package: TO-202 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.67 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
1SMC15CA TR13 PBFREE | Central Semiconductor Corp |
Description: TVS DIODE 15VWM 24.4VC SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 61.5A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
3SMC15CA BK PBFREE | Central Semiconductor Corp |
Description: TVS DIODE 15VWM 24.4VC SMC Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 123A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
P6SMB36A TR13 PBFREE | Central Semiconductor Corp |
Description: 600W 30.8V SMD TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
2N6038 PBFREE | Central Semiconductor Corp |
Description: 4A 60V TH TRANSISTOR-BIPOLAR POW Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 8mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Frequency - Transition: 25MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
1N4741A BK PBFREE | Central Semiconductor Corp |
Description: 11V 1W TH DIODE-ZENER SINGLE: ST Tolerance: ±5% Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1N4741A TR TIN/LEAD | Central Semiconductor Corp |
Description: 11V 1W TH DIODE-ZENER SINGLE: ST Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
1N4715 TR TIN/LEAD | Central Semiconductor Corp |
Description: 36V 500MW TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1N4715 BK TIN/LEAD | Central Semiconductor Corp |
Description: 36V 500MW TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1N4624 BK TIN/LEAD | Central Semiconductor Corp |
Description: 4.7V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 1550 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
CMSH2-100M TR13 PBFREE | Central Semiconductor Corp |
Description: 2A 100V SMD RECTIFIER-SCHOTTKY ( Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 139pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1N5245B BK TIN/LEAD | Central Semiconductor Corp |
Description: 15V 500MW TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MPS6521 TRE PBFREE | Central Semiconductor Corp |
Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MPS6521 APM PBFREE | Central Semiconductor Corp |
Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MPS6521 PBFREE | Central Semiconductor Corp |
Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MPS6521 TIN/LEAD | Central Semiconductor Corp |
Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MPS6521 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MPS6521 APM TIN/LEAD | Central Semiconductor Corp |
Description: 25V 100MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1N4753A BK TIN/LEAD | Central Semiconductor Corp |
Description: 36V 1W TH DIODE-ZENER SINGLE: ST Packaging: Box Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1N4753A TR TIN/LEAD | Central Semiconductor Corp |
Description: 36V 1W TH DIODE-ZENER SINGLE: ST Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
BC184B APM PBFREE | Central Semiconductor Corp |
Description: 30V 200MA 300MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 280MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
BC184B TRE PBFREE | Central Semiconductor Corp |
Description: 30V 200MA 300MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 280MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
BC184B APM TIN/LEAD | Central Semiconductor Corp |
Description: 30V 200MA 300MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 280MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
BC184B TRE TIN/LEAD | Central Semiconductor Corp |
Description: 30V 200MA 300MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 280MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
BC184B TIN/LEAD | Central Semiconductor Corp |
Description: 30V 200MA 300MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 280MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1N4747A BK TIN/LEAD | Central Semiconductor Corp |
Description: 20V 1W TH DIODE-ZENER SINGLE: ST Tolerance: ±5% Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
BC857C TR TIN/LEAD | Central Semiconductor Corp |
Description: 45V 100MA 330MW SMD TRANSISTOR-S Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MPSA63 APM PBFREE | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MPSA63 APP PBFREE | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MPSA63 APP TIN/LEAD | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MPSA63 APM TIN/LEAD | Central Semiconductor Corp |
Description: 500MA 30V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1N749A BK TIN/LEAD | Central Semiconductor Corp |
Description: 4.3V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1N4759A TR TIN/LEAD | Central Semiconductor Corp |
Description: 62V 1W TH DIODE-ZENER SINGLE: ST Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1N4759A BK TIN/LEAD | Central Semiconductor Corp |
Description: 62V 1W TH DIODE-ZENER SINGLE: ST Tolerance: ±5% Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1SMB10CA TR13 PBFREE | Central Semiconductor Corp |
Description: 600W 10V SMD TRANSIENT VOLTAGE S Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 35.3A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| 2N6297 PBFREE | Central Semiconductor Corp |
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW Packaging: Tube Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Frequency - Transition: 4MHz Supplier Device Package: TO-66 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| 2N6297 TIN/LEAD | Central Semiconductor Corp |
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW Packaging: Tube Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Frequency - Transition: 4MHz Supplier Device Package: TO-66 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
CRU24715-600 SL | Central Semiconductor Corp |
Description: RECTIFIER-ULTRA FAST <100 Packaging: Tube |
auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
CRU24730-600 SL | Central Semiconductor Corp |
Description: RECTIFIER-ULTRA FAST <100 Packaging: Tube |
auf Bestellung 1440 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
2N2369A TIN/LEAD | Central Semiconductor Corp |
Description: 15V 200MA 360MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 500MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
1N755A BK TIN/LEAD | Central Semiconductor Corp |
Description: 7.5V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| CBR2-L060M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 600V 2A B-M Packaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||
| CBR1-L040M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 400V 1.5A B-M Packaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| CBR2-L010M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 100V 2A B-M Packaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| CBR2-L040M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 400V 2A B-M Packaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| CBR2-L080M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 800V 2A B-M Packaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| CBR1-L080M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 800V 1.5A B-M Packaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| CBR2-L100M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 1KV 2A B-M Packaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| CBR1-L010M PBFREE | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 100V 1.5A B-M Packaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| CBR1-L020M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 200V 1.5A B-M Packaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N3860 TRE PBFREE |
Hersteller: Central Semiconductor Corp
Description: 30V 100MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: 30V 100MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3860 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 30V 100MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: 30V 100MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3860 APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 30V 100MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: 30V 100MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3860 TRE TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 30V 100MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: 30V 100MA 360MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 4.5V
Frequency - Transition: 90MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CZTA44 TR PBFREE |
Hersteller: Central Semiconductor Corp
Description: 400V 300MA 2W SMD TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Description: 400V 300MA 2W SMD TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 20MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6551 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 60V 1A 2W TH TRANSISTOR-BIPOLAR
Packaging: Tube
Package / Case: TO-202 Long Tab
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 1V
Frequency - Transition: 75MHz
Supplier Device Package: TO-202
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 10 W
Description: 60V 1A 2W TH TRANSISTOR-BIPOLAR
Packaging: Tube
Package / Case: TO-202 Long Tab
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 1V
Frequency - Transition: 75MHz
Supplier Device Package: TO-202
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 10 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CMSH1-40HE TR13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 1A 40V SMD RECTIFIER-SCHOTTKY (>
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 116pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: 1A 40V SMD RECTIFIER-SCHOTTKY (>
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 116pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CMSH1-60HE TR13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 1A 60V SMD RECTIFIER-SCHOTTKY (>
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 116pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: 1A 60V SMD RECTIFIER-SCHOTTKY (>
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 116pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CMSH1-100HE TR13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 1A 100V SMD RECTIFIER-SCHOTTKY (
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 116pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: 1A 100V SMD RECTIFIER-SCHOTTKY (
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 116pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CMSH1-80HE TR13 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: 1A 80V SMD RECTIFIER-SCHOTTKY (>
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 116pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
Description: 1A 80V SMD RECTIFIER-SCHOTTKY (>
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 116pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| D40K2 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 2A 50V TH TRANSISTOR-BIPOLAR POW
Packaging: Tube
Package / Case: TO-202 Long Tab
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 1.5A
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V
Frequency - Transition: 75MHz
Supplier Device Package: TO-202
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.67 W
Description: 2A 50V TH TRANSISTOR-BIPOLAR POW
Packaging: Tube
Package / Case: TO-202 Long Tab
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 1.5A
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V
Frequency - Transition: 75MHz
Supplier Device Package: TO-202
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.67 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMC15CA TR13 PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: TVS DIODE 15VWM 24.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 15VWM 24.4VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 3SMC15CA BK PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: TVS DIODE 15VWM 24.4VC SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 15VWM 24.4VC SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB36A TR13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 600W 30.8V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 30.8V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6038 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 4A 60V TH TRANSISTOR-BIPOLAR POW
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 8mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
Description: 4A 60V TH TRANSISTOR-BIPOLAR POW
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 8mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4741A BK PBFREE |
Hersteller: Central Semiconductor Corp
Description: 11V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
Description: 11V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4741A TR TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 11V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
Description: 11V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4715 TR TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 36V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Description: 36V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4715 BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 36V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Description: 36V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 27.3 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4624 BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 4.7V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 1550 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Description: 4.7V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 1550 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CMSH2-100M TR13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 2A 100V SMD RECTIFIER-SCHOTTKY (
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 139pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: 2A 100V SMD RECTIFIER-SCHOTTKY (
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 139pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5245B BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 15V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: 15V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS6521 TRE PBFREE |
Hersteller: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS6521 APM PBFREE |
Hersteller: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS6521 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS6521 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS6521 TRE TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPS6521 APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4753A BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 36V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Description: 36V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4753A TR TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 36V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Description: 36V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC184B APM PBFREE |
Hersteller: Central Semiconductor Corp
Description: 30V 200MA 300MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Description: 30V 200MA 300MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC184B TRE PBFREE |
Hersteller: Central Semiconductor Corp
Description: 30V 200MA 300MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Description: 30V 200MA 300MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC184B APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 30V 200MA 300MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Description: 30V 200MA 300MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC184B TRE TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 30V 200MA 300MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Description: 30V 200MA 300MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC184B TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 30V 200MA 300MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Description: 30V 200MA 300MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4747A BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 20V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Description: 20V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC857C TR TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 45V 100MA 330MW SMD TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: 45V 100MA 330MW SMD TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSA63 APM PBFREE |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSA63 APP PBFREE |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSA63 APP TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSA63 APM TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N749A BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 4.3V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Description: 4.3V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4759A TR TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 62V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Description: 62V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4759A BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 62V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Description: 62V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB10CA TR13 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 600W 10V SMD TRANSIENT VOLTAGE S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 10V SMD TRANSIENT VOLTAGE S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6297 PBFREE |
Hersteller: Central Semiconductor Corp
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Packaging: Tube
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Packaging: Tube
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6297 TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Packaging: Tube
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Packaging: Tube
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-66
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CRU24715-600 SL |
|
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.63 EUR |
| 30+ | 2.24 EUR |
| 120+ | 1.92 EUR |
| CRU24730-600 SL |
|
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.65 EUR |
| 30+ | 3.50 EUR |
| 120+ | 2.92 EUR |
| 510+ | 2.63 EUR |
| 1020+ | 2.27 EUR |
| 2N2369A TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 15V 200MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Description: 15V 200MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N755A BK TIN/LEAD |
Hersteller: Central Semiconductor Corp
Description: 7.5V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: 7.5V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CBR2-L060M |
|
Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 600V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.50 EUR |
| CBR1-L040M |
|
Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 400V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CBR2-L010M |
|
Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 100V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CBR2-L040M |
|
Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 400V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CBR2-L080M |
|
Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 800V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CBR1-L080M |
|
Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 800V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CBR2-L100M |
|
Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 1KV 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CBR1-L010M PBFREE |
|
Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 100V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CBR1-L020M |
|
Hersteller: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 200V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH