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BZT52C5V6S-7-F BZT52C5V6S-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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ZXMHC10A07N8TC ZXMHC10A07N8TC DIODES INCORPORATED ZXMHC10A07N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2047 Stücke:
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59+1.46 EUR
70+1.23 EUR
83+1.04 EUR
100+0.95 EUR
500+0.89 EUR
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DMHC4035LSDQ-13 DMHC4035LSDQ-13 DIODES INCORPORATED DMHC4035LSDQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXMHC6A07N8TC ZXMHC6A07N8TC DIODES INCORPORATED ZXMHC6A07N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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ZXMHC3F381N8TC ZXMHC3F381N8TC DIODES INCORPORATED ZXMHC3F381N8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
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DSS3540M-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Polarisation: bipolar
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DSS3515M-7 DIODES INCORPORATED Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3515M-7B DIODES INCORPORATED DSS3515M.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3540M-7B DIODES INCORPORATED DSS3540M.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
Produkt ist nicht verfügbar
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AH49EZ3-G1 DIODES INCORPORATED AH49E.pdf Category: Hall Sensors
Description: Sensor: Hall; THT; Temp: -40÷85°C
Type of sensor: Hall
Mounting: THT
Operating temperature: -40...85°C
auf Bestellung 51000 Stücke:
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DMC3028LSD-13 DMC3028LSD-13 DIODES INCORPORATED DMC3028LSD-13.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
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85+1 EUR
130+0.65 EUR
205+0.42 EUR
500+0.31 EUR
1000+0.3 EUR
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DMC1018UPDWQ-13 DIODES INCORPORATED DMC1018UPDWQ.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Application: automotive industry
Produkt ist nicht verfügbar
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DMC1018UPD-13 DIODES INCORPORATED DMC1018UPD.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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BZT52C12Q-7-F BZT52C12Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2320 Stücke:
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625+0.13 EUR
770+0.11 EUR
944+0.09 EUR
1619+0.052 EUR
1662+0.051 EUR
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BZT52C12SQ-7-F BZT52C12SQ-7-F DIODES INCORPORATED Ds30093-R20.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C12T-7 BZT52C12T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C12TQ-7-F BZT52C12TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C12Q-13-F BZT52C12Q-13-F DIODES INCORPORATED ds18004.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMBTA06Q-7-F MMBTA06Q-7-F DIODES INCORPORATED MMBTA05_MMBTA06.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
Produkt ist nicht verfügbar
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AP2112M-3.3TRG1 AP2112M-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Case: SO8
Number of channels: 1
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...6V
Output current: 0.6A
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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AP2112R5-3.3TRG1 AP2112R5-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...6V
Output current: 0.6A
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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AP2112R5A-3.3TRG1 AP2112R5A-3.3TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...6V
Output current: 0.6A
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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AP2112R5-1.2TRG1 AP2112R5-1.2TRG1 DIODES INCORPORATED AP2112.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Integrated circuit features: shutdown mode control input
Output voltage: 1.2V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...6V
Output current: 0.6A
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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ZVP3310FTA ZVP3310FTA DIODES INCORPORATED ZVP3310F.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -140mA; Idm: -1.2A; 0.33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140mA
Pulsed drain current: -1.2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
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95+0.9 EUR
131+0.65 EUR
161+0.54 EUR
220+0.39 EUR
240+0.36 EUR
500+0.29 EUR
1000+0.26 EUR
3000+0.24 EUR
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74AHC1G125W5-7 74AHC1G125W5-7 DIODES INCORPORATED 74AHC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHC; 40uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
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74LVC1G125W5-7 74LVC1G125W5-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 200µA
Kind of package: reel; tape
Case: SOT25
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
auf Bestellung 2123 Stücke:
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500+0.17 EUR
658+0.13 EUR
758+0.11 EUR
893+0.095 EUR
1099+0.077 EUR
1112+0.076 EUR
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74AHC1G125SE-7 74AHC1G125SE-7 DIODES INCORPORATED 74AHC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; AHC; 2÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
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74AHCT1G125SE-7 74AHCT1G125SE-7 DIODES INCORPORATED 74AHCT1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHCT
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 2498 Stücke:
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500+0.17 EUR
676+0.13 EUR
770+0.11 EUR
913+0.093 EUR
1127+0.075 EUR
1244+0.068 EUR
1316+0.064 EUR
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74AHCT1G125W5-7 74AHCT1G125W5-7 DIODES INCORPORATED 74AHCT1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHCT
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 909 Stücke:
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455+0.19 EUR
582+0.14 EUR
658+0.13 EUR
787+0.11 EUR
909+0.094 EUR
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74LVC1G125SE-7 74LVC1G125SE-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 200µA
Kind of package: reel; tape
Case: SOT353
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
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85+1 EUR
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74LVC1G125Z-7 74LVC1G125Z-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
Produkt ist nicht verfügbar
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74LVC1G125FW4-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
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74LVC1G125FZ4-7 DIODES INCORPORATED 74LVC1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
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74AUP1G125FS3-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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74AUP1G125FW5-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
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74AUP1G125FX4-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
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74AUP1G125FZ4-7 DIODES INCORPORATED 74AUP1G125.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: AUP
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
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SMAJ28CA-13-F SMAJ28CA-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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234+0.37 EUR
269+0.32 EUR
410+0.2 EUR
532+0.15 EUR
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SMAJ28A-13-F SMAJ28A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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491+0.18 EUR
569+0.15 EUR
642+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
2500+0.11 EUR
5000+0.1 EUR
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SMAJ28CAQ-13-F SMAJ28CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMAJ28AQ-13-F SMAJ28AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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DMTH6004SK3Q-13 DMTH6004SK3Q-13 DIODES INCORPORATED DMTH6004SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 3.9W
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
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51+1.69 EUR
60+1.43 EUR
100+1.19 EUR
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DMTH4004SCTB-13 DIODES INCORPORATED DMTH4004SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
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DMTH4004SCTBQ-13 DIODES INCORPORATED DMTH4004SCTBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
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DMTH6004SCTB-13 DIODES INCORPORATED DMTH6004SCTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
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DMTH6004SCTBQ-13 DIODES INCORPORATED DMTH6004SCTBQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
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AP62250WU-7 AP62250WU-7 DIODES INCORPORATED AP62250.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2.5A
Case: TSOT26
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
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P6SMAJ28ADF-13 DIODES INCORPORATED P6SMAJ5.0ADF-P6SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMT6013LSS-13 DMT6013LSS-13 DIODES INCORPORATED DMT6013LSS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2.1W
Gate charge: 15nC
Polarisation: unipolar
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SMBJ28A-13-F SMBJ28A-13-F DIODES INCORPORATED ds19002.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ28AQ-13-F SMBJ28AQ-13-F DIODES INCORPORATED ds40740.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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BZT52C15SQ-7-F BZT52C15SQ-7-F DIODES INCORPORATED BZT52CxxS_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52C15LP-7 BZT52C15LP-7 DIODES INCORPORATED BZT52CxxLP_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 2137 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
261+0.32 EUR
332+0.26 EUR
506+0.17 EUR
747+0.11 EUR
1000+0.1 EUR
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BZT52C15-13-F BZT52C15-13-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37W
Tolerance: ±6%
Zener voltage: 15V
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9+9.46 EUR
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BZT52C15T-7 BZT52C15T-7 DIODES INCORPORATED BZT52CxxT_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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BZT52C15TQ-7-F BZT52C15TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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B550C-13-F B550C-13-F DIODES INCORPORATED B5X0C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.7V
Load current: 5A
Capacitance: 0.3nF
auf Bestellung 511 Stücke:
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91+0.94 EUR
115+0.75 EUR
132+0.64 EUR
201+0.43 EUR
500+0.37 EUR
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BAV23A-7-F BAV23A-7-F DIODES INCORPORATED BAV23-7-F-DTE.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.625A
Capacitance: 5pF
auf Bestellung 190 Stücke:
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190+0.44 EUR
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BAV23CQ-7-F BAV23CQ-7-F DIODES INCORPORATED BAV23A_C_S.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 9A
Max. load current: 0.625A
Capacitance: 5pF
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BAV23S-7-F BAV23S-7-F DIODES INCORPORATED bav23x.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.625A
Capacitance: 5pF
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BZT52C5V6S-7-F BZT52CxxS_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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ZXMHC10A07N8TC ZXMHC10A07N8.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2047 Stücke:
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AnzahlPrivatkunde
59+1.46 EUR
70+1.23 EUR
83+1.04 EUR
100+0.95 EUR
500+0.89 EUR
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DMHC4035LSDQ-13 DMHC4035LSDQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 3.5/-2.9A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 58/100mΩ
Mounting: SMD
Gate charge: 12.5/11.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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ZXMHC6A07N8TC ZXMHC6A07N8.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 1.8/-1.4A
Power dissipation: 1.36W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 250/400mΩ
Mounting: SMD
Gate charge: 3.2/5.1nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
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ZXMHC3F381N8TC ZXMHC3F381N8.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 3.98/-3.36A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 3.98/-3.36A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Pulsed drain current: 22.9...-19.6A
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DSS3540M-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 500mA; X1-DFN1006-3
Mounting: SMD
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 40V
Polarisation: bipolar
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DSS3515M-7
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3515M-7B DSS3515M.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 90...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100...340MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 15V
Power dissipation: 1W
Polarisation: bipolar
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DSS3540M-7B DSS3540M.pdf
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.5A; 1W; X1-DFN1006-3
Mounting: SMD
Pulsed collector current: 1A
Type of transistor: PNP
Current gain: 40...200
Kind of package: reel; tape
Case: X1-DFN1006-3
Frequency: 100MHz
Collector current: 0.5A
Manufacturer standard package: 10000pcs.
Collector-emitter voltage: 40V
Power dissipation: 1W
Polarisation: bipolar
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AH49EZ3-G1 AH49E.pdf
Hersteller: DIODES INCORPORATED
Category: Hall Sensors
Description: Sensor: Hall; THT; Temp: -40÷85°C
Type of sensor: Hall
Mounting: THT
Operating temperature: -40...85°C
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+0.37 EUR
Mindestbestellmenge: 1000 Stücke
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DMC3028LSD-13 DMC3028LSD-13.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7.4/-7.1A
Power dissipation: 2.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.028/0.025Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
130+0.65 EUR
205+0.42 EUR
500+0.31 EUR
1000+0.3 EUR
Mindestbestellmenge: 85 Stücke
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DMC1018UPDWQ-13 DMC1018UPDWQ.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Application: automotive industry
Produkt ist nicht verfügbar
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DMC1018UPD-13 DMC1018UPD.pdf
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar
Mounting: SMD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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BZT52C12Q-7-F BZT52Cxx_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
625+0.13 EUR
770+0.11 EUR
944+0.09 EUR
1619+0.052 EUR
1662+0.051 EUR
Mindestbestellmenge: 625 Stücke
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BZT52C12SQ-7-F Ds30093-R20.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 12V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C12T-7 BZT52CxxT_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZT52C12TQ-7-F ds30502.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5.5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C12Q-13-F ds18004.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MMBTA06Q-7-F MMBTA05_MMBTA06.pdf
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
Produkt ist nicht verfügbar
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AP2112M-3.3TRG1 AP2112.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SO8; SMD; Ch: 1
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Case: SO8
Number of channels: 1
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...6V
Output current: 0.6A
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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AP2112R5-3.3TRG1 AP2112.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...6V
Output current: 0.6A
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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AP2112R5A-3.3TRG1 AP2112.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.6A; SOT89; SMD
Integrated circuit features: shutdown mode control input
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...6V
Output current: 0.6A
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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AP2112R5-1.2TRG1 AP2112.pdf
Hersteller: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT89; SMD
Integrated circuit features: shutdown mode control input
Output voltage: 1.2V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...6V
Output current: 0.6A
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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ZVP3310FTA ZVP3310F.pdf
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -140mA; Idm: -1.2A; 0.33W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -140mA
Pulsed drain current: -1.2A
Power dissipation: 0.33W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
95+0.9 EUR
131+0.65 EUR
161+0.54 EUR
220+0.39 EUR
240+0.36 EUR
500+0.29 EUR
1000+0.26 EUR
3000+0.24 EUR
Mindestbestellmenge: 95 Stücke
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74AHC1G125W5-7 74AHC1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHC; 40uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT25
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
auf Bestellung 385 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
385+0.23 EUR
Mindestbestellmenge: 385 Stücke
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74LVC1G125W5-7 74LVC1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; LVC
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 200µA
Kind of package: reel; tape
Case: SOT25
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
auf Bestellung 2123 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
658+0.13 EUR
758+0.11 EUR
893+0.095 EUR
1099+0.077 EUR
1112+0.076 EUR
Mindestbestellmenge: 500 Stücke
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74AHC1G125SE-7 74AHC1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT353; AHC; 2÷5.5VDC
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SOT353
Quiescent current: 40µA
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 2...5.5V DC
Manufacturer series: AHC
Kind of output: 3-state
Operating temperature: -40...125°C
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+28.37 EUR
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74AHCT1G125SE-7 74AHCT1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; AHCT
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 2498 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
676+0.13 EUR
770+0.11 EUR
913+0.093 EUR
1127+0.075 EUR
1244+0.068 EUR
1316+0.064 EUR
Mindestbestellmenge: 500 Stücke
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74AHCT1G125W5-7 74AHCT1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT25; AHCT
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AHCT
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
auf Bestellung 909 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
582+0.14 EUR
658+0.13 EUR
787+0.11 EUR
909+0.094 EUR
Mindestbestellmenge: 455 Stücke
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74LVC1G125SE-7 74LVC1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT353; LVC
Supply voltage: 1.65...5.5V DC
Manufacturer series: LVC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 200µA
Kind of package: reel; tape
Case: SOT353
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
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74LVC1G125Z-7 74LVC1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SOT553; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT553
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Quiescent current: 200µA
Manufacturer series: LVC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G125FW4-7 74LVC1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1010-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G125FZ4-7 74LVC1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 1; CMOS,TTL; SMD; X2-DFN1410-6; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.65...5.5V DC
Family: LVC
Produkt ist nicht verfügbar
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74AUP1G125FS3-7 74AUP1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN0808-4
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G125FW5-7 74AUP1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X1-DFN1010-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74AUP1G125FX4-7 74AUP1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,bus driver,non-inverting; Ch: 1; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; bus driver; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1409-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: AUP
Supply voltage: 0.8...3.6V DC
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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74AUP1G125FZ4-7 74AUP1G125.pdf
Hersteller: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; -40÷150°C; AUP
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: push-pull
Family: AUP
Supply voltage: 0.8...3.6V DC
Number of inputs: 2
Produkt ist nicht verfügbar
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SMAJ28CA-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 843 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
162+0.52 EUR
234+0.37 EUR
269+0.32 EUR
410+0.2 EUR
532+0.15 EUR
Mindestbestellmenge: 162 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ28A-13-F SMAJ_ser.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 10026 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
334+0.25 EUR
491+0.18 EUR
569+0.15 EUR
642+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
2500+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 334 Stücke
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SMAJ28CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMAJ28AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1÷34.4V; 8.8A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6004SK3Q-13 DMTH6004SK3Q.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 3.9W; TO252
Case: TO252
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 3.9W
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
34+2.55 EUR
51+1.69 EUR
60+1.43 EUR
100+1.19 EUR
Mindestbestellmenge: 34 Stücke
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DMTH4004SCTB-13 DMTH4004SCTB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
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DMTH4004SCTBQ-13 DMTH4004SCTBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 68.6nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Produkt ist nicht verfügbar
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DMTH6004SCTB-13 DMTH6004SCTB.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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DMTH6004SCTBQ-13 DMTH6004SCTBQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 200A; 4.7W; TO263AB
Case: TO263AB
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 200A
Power dissipation: 4.7W
Gate charge: 95.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Produkt ist nicht verfügbar
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AP62250WU-7 AP62250.pdf
Hersteller: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.2÷18VDC; Uout: 0.8÷7VDC; 2.5A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.2...18V DC
Output voltage: 0.8...7V DC
Output current: 2.5A
Case: TSOT26
Mounting: SMD
Frequency: 1.3MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
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P6SMAJ28ADF-13 P6SMAJ5.0ADF-P6SMAJ85ADF.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMT6013LSS-13 DMT6013LSS.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 60A; 2.1W; SO8
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 2.1W
Gate charge: 15nC
Polarisation: unipolar
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SMBJ28A-13-F ds19002.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMBJ28AQ-13-F ds40740.pdf
Hersteller: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷35.8V; 13.2A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...35.8V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZT52C15SQ-7-F BZT52CxxS_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BZT52C15LP-7 BZT52CxxLP_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 2137 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
261+0.32 EUR
332+0.26 EUR
506+0.17 EUR
747+0.11 EUR
1000+0.1 EUR
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BZT52C15-13-F BZT52Cxx_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.37W
Tolerance: ±6%
Zener voltage: 15V
auf Bestellung 9 Stücke:
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AnzahlPrivatkunde
9+9.46 EUR
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BZT52C15T-7 BZT52CxxT_ser.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZT52C15TQ-7-F ds30502.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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B550C-13-F B5X0C-DTE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.7V
Load current: 5A
Capacitance: 0.3nF
auf Bestellung 511 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
91+0.94 EUR
115+0.75 EUR
132+0.64 EUR
201+0.43 EUR
500+0.37 EUR
Mindestbestellmenge: 91 Stücke
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BAV23A-7-F BAV23-7-F-DTE.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.625A
Capacitance: 5pF
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
190+0.44 EUR
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BAV23CQ-7-F BAV23A_C_S.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. forward impulse current: 9A
Max. load current: 0.625A
Capacitance: 5pF
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BAV23S-7-F bav23x.pdf
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Max. load current: 0.625A
Capacitance: 5pF
Produkt ist nicht verfügbar
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