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DDZX27D-13 DDZX27D-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 27V 300MW SOT23
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DDZX30D-13 DDZX30D-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 30V 300MW SOT23
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DDZX33-13 DDZX33-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 33V 300MW SOT23
Voltage - Zener (Nom) (Vz): 33 V
Power - Max: 300 mW
Impedance (Max) (Zzt): 75 Ohms
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 27
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Supplier Device Package: SOT-23-3
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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DDZX36-13 DDZX36-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 36.9V 300MW SOT23
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DDZX39F-13 DDZX39F-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 39V 300MW SOT23
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DDZX43-13 DDZX43-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 43V 300MW SOT23
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DDZX5V1B-13 DDZX5V1B-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 5.1V 300MW SOT23
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DDZX5V6B-13 DDZX5V6B-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 5.6V 300MW SOT23
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DDZX6V2B-13 DDZX6V2B-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 6.2V 300MW SOT23
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
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DDZX6V8C-13 DDZX6V8C-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 6.8V 300MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
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DDZX7V5C-13 DDZX7V5C-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 7.5V 300MW SOT23
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 6 Ohms
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DDZX8V2C-13 DDZX8V2C-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 8.2V 300MW SOT23
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DDZX9V1C-13 DDZX9V1C-13 Diodes Incorporated ds30408.pdf Description: DIODE ZENER 9.1V 300MW SOT23
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DESD6V8DLP-7B DESD6V8DLP-7B Diodes Incorporated DESD6V8DLP.pdf Description: TVS DIODE 5.25VWM X1DFN10063
Power Line Protection: No
Power - Peak Pulse: 70W
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 2
Supplier Device Package: X1-DFN1006-3
Voltage - Reverse Standoff (Typ): 5.25V
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
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DF1501S DF1501S Diodes Incorporated DF15005S-DF1510S.pdf Description: BRIDGE RECT 1P 100V 1.5A DF-S
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DF1508S DF1508S Diodes Incorporated DF15005S-DF1510S.pdf Description: BRIDGE RECT 1P 800V 1.5A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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DFLF1800-7 DFLF1800-7 Diodes Incorporated Description: DIODE GP 800V 1A POWERDI123
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
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DFLS260-7 DFLS260-7 Diodes Incorporated DFLS260.pdf Description: DIODE SCHOTTK 60V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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DMC3032LSD-13 DMC3032LSD-13 Diodes Incorporated ds32153.pdf Description: MOSFET N/P-CH 30V 8.1A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
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DMG4407SSS-13 DMG4407SSS-13 Diodes Incorporated DMG4407SSS.pdf Description: MOSFET P-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.45W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DMG4468LFG-7 DMG4468LFG-7 Diodes Incorporated ds31857.pdf Description: MOSFET N-CH 30V 7.62A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN3030-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
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DMG4812SSS-13 DMG4812SSS-13 Diodes Incorporated DMG4812SSS.pdf Description: MOSFET N-CH 30V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DMG7702SFG-13 DMG7702SFG-13 Diodes Incorporated DMG7702SFG.pdf Description: MOSFET N-CH 30V 12A POWERDI3333
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DMG9933USD-13 DMG9933USD-13 Diodes Incorporated DMG9933USD.pdf Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DMN2004TK-7 DMN2004TK-7 Diodes Incorporated ds30936.pdf Description: MOSFET N-CH 20V 540MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
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DMN2300UFB-7B DMN2300UFB-7B Diodes Incorporated DMN2300UFB.pdf Description: MOSFET N-CH 20V 1.32A 3DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 468mW (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
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DMN2600UFB-7 DMN2600UFB-7 Diodes Incorporated ds31983.pdf Description: MOSFET N-CH 25V 1.3A 3DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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DMN3024SFG-13 DMN3024SFG-13 Diodes Incorporated DMN3024SFG.pdf Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
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DMN3025LFG-13 DMN3025LFG-13 Diodes Incorporated DMN3025LFG.pdf Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
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DMN3051LDM-7 DMN3051LDM-7 Diodes Incorporated ds31523.pdf Description: MOSFET N-CH 30V 4A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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DMN66D0LW-7 DMN66D0LW-7 Diodes Incorporated ds31483.pdf Description: MOSFET N-CH 60V 115MA SOT323
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DMP1045U-7 DMP1045U-7 Diodes Incorporated DMP1045U.pdf Description: MOSFET P-CH 12V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
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DMP1045UFY4-7 DMP1045UFY4-7 Diodes Incorporated DMP1045UFY4.pdf Description: MOSFET P-CH 12V 5.5A DFN2015H4-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2015H4-3
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DMP2008UFG-13 DMP2008UFG-13 Diodes Incorporated DMP2008UFG.pdf Description: MOSFET P-CH 20V 14A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V
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DMP210DUDJ-7 DMP210DUDJ-7 Diodes Incorporated ds31494.pdf Description: MOSFET 2P-CH 20V 0.2A SOT-963
Produkt ist nicht verfügbar
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DMP2160UFDB-7 DMP2160UFDB-7 Diodes Incorporated DMP2160UFDB.pdf Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMP21D0UFB-7 DMP21D0UFB-7 Diodes Incorporated DMP21D0UFB.pdf Description: MOSFET P-CH 20V 770MA 3DFN
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DMP3008SFG-13 DMP3008SFG-13 Diodes Incorporated DMP3008SFG.pdf Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
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DMP3120L-7 DMP3120L-7 Diodes Incorporated DMP3120L.pdf Description: MOSFET P-CH 30V 2.8A SOT-23
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Produkt ist nicht verfügbar
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DMP4015SSS-13 DMP4015SSS-13 Diodes Incorporated DMP4015SSS.pdf Description: MOSFET P-CH 40V 9.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
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DMP4025SFG-13 DMP4025SFG-13 Diodes Incorporated DMP4025SFG.pdf Description: MOSFET P-CH 40V 4.65A PWRDI3333
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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DMP58D0LFB-7 DMP58D0LFB-7 Diodes Incorporated Description: MOSFET P-CH 50V 180MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
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DMS3012SFG-13 DMS3012SFG-13 Diodes Incorporated DMS3012SFG.pdf Description: MOSFET N-CH 30V 12A POWERDI
Produkt ist nicht verfügbar
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DN0150ALP4-7 DN0150ALP4-7 Diodes Incorporated ds31492.pdf Description: TRANS NPN 50V 0.1A DFN1006H4-3
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DN0150BLP4-7 DN0150BLP4-7 Diodes Incorporated ds31492.pdf Description: TRANS NPN 50V 0.1A X1-DFN1006-3
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DP0150ALP4-7 DP0150ALP4-7 Diodes Incorporated ds31493.pdf Description: TRANS PNP 50V 0.1A X1DFN10063
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DP0150BLP4-7 DP0150BLP4-7 Diodes Incorporated DP0150BLP4.pdf Description: TRANS PNP 50V 0.1A X2-DFN1006-3
Power - Max: 450 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
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6000+0.22 EUR
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75000+0.18 EUR
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DSRHD10-13 DSRHD10-13 Diodes Incorporated DSRHD10.pdf Description: BRIDGE RECT 1P 1KV 1A 4-TMINIDIP
Produkt ist nicht verfügbar
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DSS5240Y-7 DSS5240Y-7 Diodes Incorporated DSS5240Y.pdf Description: TRANS PNP 40V 2A SOT-363
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-363
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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DSS5320T-7 DSS5320T-7 Diodes Incorporated DSS5320T.pdf Description: TRANS PNP 20V 2A SOT-23-3
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
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15000+0.093 EUR
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DSS5540X-13 DSS5540X-13 Diodes Incorporated DSS5540X.pdf Description: TRANS PNP 40V 4A SOT-89-3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: SOT-89-3
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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DSS8110Y-7 DSS8110Y-7 Diodes Incorporated DSS8110Y.pdf Description: TRANS NPN 100V 1A SOT-363
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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30000+0.089 EUR
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DSS9110Y-7 DSS9110Y-7 Diodes Incorporated DSS9110Y.pdf Description: TRANS PNP 100V 1A SOT-363
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DXTP03200BP5-13 DXTP03200BP5-13 Diodes Incorporated ds32068.pdf Description: TRANS PNP 200V 2A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 105MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 3.2 W
Produkt ist nicht verfügbar
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LM4040B25FTA LM4040B25FTA Diodes Incorporated LM4040.pdf Description: IC VREF SHUNT 0.2% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Noise - 10Hz to 10kHz: 35µVrms
Part Status: Active
Current - Cathode: 68 µA
Current - Output: 15 mA
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LM4040B25H5TA LM4040B25H5TA Diodes Incorporated LM4040.pdf Description: IC VREF SHUNT 2.5V SC70
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LM4040B30FTA LM4040B30FTA Diodes Incorporated LM4040.pdf Description: IC VREF SHUNT 0.2% SOT23
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LM4040B30H5TA LM4040B30H5TA Diodes Incorporated LM4040.pdf Description: IC VREF SHUNT 0.2% SC70-5
Produkt ist nicht verfügbar
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LM4040B50FTA LM4040B50FTA Diodes Incorporated LM4040.pdf Description: IC VREF SHUNT 0.2% SOT23
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-23-3
Operating Temperature: -40°C ~ 125°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Fixed
Temperature Coefficient: 100ppm/°C
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Current - Output: 15 mA
Current - Cathode: 83 µA
Part Status: Active
Noise - 10Hz to 10kHz: 80µVrms
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LM4040B50H5TA LM4040B50H5TA Diodes Incorporated LM4040.pdf Description: IC VREF SHUNT 0.2% SC70-5
Produkt ist nicht verfügbar
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DDZX27D-13 ds30408.pdf
DDZX27D-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
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10000+0.06 EUR
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DDZX30D-13 ds30408.pdf
DDZX30D-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 30V 300MW SOT23
Produkt ist nicht verfügbar
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DDZX33-13 ds30408.pdf
DDZX33-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 33V 300MW SOT23
Voltage - Zener (Nom) (Vz): 33 V
Power - Max: 300 mW
Impedance (Max) (Zzt): 75 Ohms
Current - Reverse Leakage @ Vr: 50 nA @ 27 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 27
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Supplier Device Package: SOT-23-3
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DDZX36-13 ds30408.pdf
DDZX36-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 36.9V 300MW SOT23
Produkt ist nicht verfügbar
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DDZX39F-13 ds30408.pdf
DDZX39F-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 39V 300MW SOT23
Produkt ist nicht verfügbar
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DDZX43-13 ds30408.pdf
DDZX43-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 43V 300MW SOT23
Produkt ist nicht verfügbar
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DDZX5V1B-13 ds30408.pdf
DDZX5V1B-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
Produkt ist nicht verfügbar
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DDZX5V6B-13 ds30408.pdf
DDZX5V6B-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.6V 300MW SOT23
Produkt ist nicht verfügbar
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DDZX6V2B-13 ds30408.pdf
DDZX6V2B-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.2V 300MW SOT23
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Produkt ist nicht verfügbar
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DDZX6V8C-13 ds30408.pdf
DDZX6V8C-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.8V 300MW SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2.56%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DDZX7V5C-13 ds30408.pdf
DDZX7V5C-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 7.5V 300MW SOT23
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 6 Ohms
auf Bestellung 180000 Stücke:
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AnzahlPreis
10000+0.058 EUR
30000+0.057 EUR
50000+0.051 EUR
100000+0.045 EUR
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DDZX8V2C-13 ds30408.pdf
DDZX8V2C-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 300MW SOT23
Produkt ist nicht verfügbar
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DDZX9V1C-13 ds30408.pdf
DDZX9V1C-13
Hersteller: Diodes Incorporated
Description: DIODE ZENER 9.1V 300MW SOT23
Produkt ist nicht verfügbar
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DESD6V8DLP-7B DESD6V8DLP.pdf
DESD6V8DLP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.25VWM X1DFN10063
Power Line Protection: No
Power - Peak Pulse: 70W
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 2
Supplier Device Package: X1-DFN1006-3
Voltage - Reverse Standoff (Typ): 5.25V
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DF1501S DF15005S-DF1510S.pdf
DF1501S
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1.5A DF-S
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AnzahlPreis
50+1.36 EUR
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DF1508S DF15005S-DF1510S.pdf
DF1508S
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 800V 1.5A DF-S
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DF-S
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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DFLF1800-7
DFLF1800-7
Hersteller: Diodes Incorporated
Description: DIODE GP 800V 1A POWERDI123
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 123
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: POWERDI®123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DFLS260-7 DFLS260.pdf
DFLS260-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTK 60V 2A POWERDI 123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PowerDI™ 123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
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DMC3032LSD-13 ds32153.pdf
DMC3032LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.1A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 404.5pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
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AnzahlPreis
2500+0.26 EUR
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DMG4407SSS-13 DMG4407SSS.pdf
DMG4407SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.45W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMG4468LFG-7 ds31857.pdf
DMG4468LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.62A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN3030-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 11.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.62A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMG4812SSS-13 DMG4812SSS.pdf
DMG4812SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMG7702SFG-13 DMG7702SFG.pdf
DMG7702SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A POWERDI3333
Produkt ist nicht verfügbar
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DMG9933USD-13 DMG9933USD.pdf
DMG9933USD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.6A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 608.4pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2500+0.24 EUR
5000+0.22 EUR
7500+0.21 EUR
12500+0.2 EUR
17500+0.19 EUR
25000+0.18 EUR
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DMN2004TK-7 ds30936.pdf
DMN2004TK-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 540MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V
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AnzahlPreis
3000+0.24 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.2 EUR
21000+0.19 EUR
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DMN2300UFB-7B DMN2300UFB.pdf
DMN2300UFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.32A 3DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 468mW (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
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10000+0.14 EUR
50000+0.12 EUR
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DMN2600UFB-7 ds31983.pdf
DMN2600UFB-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 25V 1.3A 3DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 70.13 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 105000 Stücke:
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3000+0.086 EUR
6000+0.078 EUR
9000+0.073 EUR
15000+0.068 EUR
21000+0.065 EUR
30000+0.062 EUR
75000+0.056 EUR
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DMN3024SFG-13 DMN3024SFG.pdf
DMN3024SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
Produkt ist nicht verfügbar
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DMN3025LFG-13 DMN3025LFG.pdf
DMN3025LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.5A PWRDI3333-8
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DMN3051LDM-7 ds31523.pdf
DMN3051LDM-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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3000+0.26 EUR
6000+0.24 EUR
15000+0.22 EUR
30000+0.21 EUR
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DMN66D0LW-7 ds31483.pdf
DMN66D0LW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 115MA SOT323
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DMP1045U-7 DMP1045U.pdf
DMP1045U-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
Produkt ist nicht verfügbar
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DMP1045UFY4-7 DMP1045UFY4.pdf
DMP1045UFY4-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 5.5A DFN2015H4-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2015H4-3
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3000+0.17 EUR
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DMP2008UFG-13 DMP2008UFG.pdf
DMP2008UFG-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 14A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V
auf Bestellung 45000 Stücke:
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AnzahlPreis
3000+0.35 EUR
6000+0.32 EUR
9000+0.31 EUR
15000+0.29 EUR
21000+0.28 EUR
30000+0.27 EUR
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DMP210DUDJ-7 ds31494.pdf
DMP210DUDJ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 0.2A SOT-963
Produkt ist nicht verfügbar
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DMP2160UFDB-7 DMP2160UFDB.pdf
DMP2160UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 417000 Stücke:
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AnzahlPreis
3000+0.21 EUR
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DMP21D0UFB-7 DMP21D0UFB.pdf
DMP21D0UFB-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 770MA 3DFN
Produkt ist nicht verfügbar
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DMP3008SFG-13 DMP3008SFG.pdf
DMP3008SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Produkt ist nicht verfügbar
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DMP3120L-7 DMP3120L.pdf
DMP3120L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 2.8A SOT-23
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Produkt ist nicht verfügbar
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DMP4015SSS-13 DMP4015SSS.pdf
DMP4015SSS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 9.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
Power Dissipation (Max): 1.45W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4234 pF @ 20 V
Produkt ist nicht verfügbar
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DMP4025SFG-13 DMP4025SFG.pdf
DMP4025SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 4.65A PWRDI3333
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Power Dissipation (Max): 810mW (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 171000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.32 EUR
6000+0.29 EUR
9000+0.28 EUR
15000+0.27 EUR
21000+0.26 EUR
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DMP58D0LFB-7
DMP58D0LFB-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
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DMS3012SFG-13 DMS3012SFG.pdf
DMS3012SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A POWERDI
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DN0150ALP4-7 ds31492.pdf
DN0150ALP4-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 0.1A DFN1006H4-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DN0150BLP4-7 ds31492.pdf
DN0150BLP4-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 0.1A X1-DFN1006-3
Produkt ist nicht verfügbar
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DP0150ALP4-7 ds31493.pdf
DP0150ALP4-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 0.1A X1DFN10063
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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DP0150BLP4-7 DP0150BLP4.pdf
DP0150BLP4-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 50V 0.1A X2-DFN1006-3
Power - Max: 450 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X2-DFN1006-3
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2250000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.25 EUR
6000+0.22 EUR
9000+0.21 EUR
15000+0.2 EUR
21000+0.19 EUR
75000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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DSRHD10-13 DSRHD10.pdf
DSRHD10-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 1KV 1A 4-TMINIDIP
Produkt ist nicht verfügbar
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DSS5240Y-7 DSS5240Y.pdf
DSS5240Y-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 2A SOT-363
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-363
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DSS5320T-7 DSS5320T.pdf
DSS5320T-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 2A SOT-23-3
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-23-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.12 EUR
6000+0.11 EUR
9000+0.099 EUR
15000+0.093 EUR
21000+0.089 EUR
Mindestbestellmenge: 3000 Stücke
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DSS5540X-13 DSS5540X.pdf
DSS5540X-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 4A SOT-89-3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: SOT-89-3
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.27 EUR
5000+0.25 EUR
Mindestbestellmenge: 2500 Stücke
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DSS8110Y-7 DSS8110Y.pdf
DSS8110Y-7
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A SOT-363
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.097 EUR
21000+0.093 EUR
30000+0.089 EUR
Mindestbestellmenge: 3000 Stücke
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DSS9110Y-7 DSS9110Y.pdf
DSS9110Y-7
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT-363
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-363
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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DXTP03200BP5-13 ds32068.pdf
DXTP03200BP5-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 200V 2A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 105MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 3.2 W
Produkt ist nicht verfügbar
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LM4040B25FTA LM4040.pdf
LM4040B25FTA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Noise - 10Hz to 10kHz: 35µVrms
Part Status: Active
Current - Cathode: 68 µA
Current - Output: 15 mA
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.58 EUR
6000+0.57 EUR
9000+0.56 EUR
15000+0.55 EUR
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LM4040B25H5TA LM4040.pdf
LM4040B25H5TA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 2.5V SC70
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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LM4040B30FTA LM4040.pdf
LM4040B30FTA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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LM4040B30H5TA LM4040.pdf
LM4040B30H5TA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SC70-5
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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LM4040B50FTA LM4040.pdf
LM4040B50FTA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SOT23
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: SOT-23-3
Operating Temperature: -40°C ~ 125°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Fixed
Temperature Coefficient: 100ppm/°C
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±0.2%
Packaging: Tape & Reel (TR)
Current - Output: 15 mA
Current - Cathode: 83 µA
Part Status: Active
Noise - 10Hz to 10kHz: 80µVrms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.52 EUR
Mindestbestellmenge: 3000 Stücke
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LM4040B50H5TA LM4040.pdf
LM4040B50H5TA
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.2% SC70-5
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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