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AZ1117IH-5.0TRG1 AZ1117IH-5.0TRG1 Diodes Incorporated AZ1117I.pdf Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
auf Bestellung 48685 Stücke:
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72+0.24 EUR
82+0.22 EUR
100+0.19 EUR
250+0.17 EUR
500+0.16 EUR
1000+0.15 EUR
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AH5775-P-B AH5775-P-B Diodes Incorporated AH5775.pdf Description: IC MOTOR DRIVER 2.5V-18V TO94
Packaging: Bulk
Package / Case: 4-SSIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 18V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 18V
Supplier Device Package: TO-94
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
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DMC2450UV-7 DMC2450UV-7 Diodes Incorporated DMC2450UV.pdf Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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DML1005LDS-7 DML1005LDS-7 Diodes Incorporated DML1005LDS.pdf Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.8mOhm
Voltage - Load: 0.8V ~ 4V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Produkt ist nicht verfügbar
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DMN63D8L-7 DMN63D8L-7 Diodes Incorporated DMN63D8L.pdf Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
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3000+0.053 EUR
6000+0.05 EUR
9000+0.041 EUR
15000+0.039 EUR
30000+0.037 EUR
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DMNH10H028SK3-13 DMNH10H028SK3-13 Diodes Incorporated DMNH10H028SK3.pdf Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
auf Bestellung 195000 Stücke:
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2500+0.91 EUR
5000+0.87 EUR
12500+0.85 EUR
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DMNH4006SK3-13 DMNH4006SK3-13 Diodes Incorporated DMNH4006SK3.pdf Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
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2500+1.24 EUR
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DMP10H4D2S-7 DMP10H4D2S-7 Diodes Incorporated DMP10H4D2S.pdf Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
auf Bestellung 15000 Stücke:
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3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
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DMP510DL-7 DMP510DL-7 Diodes Incorporated DMP510DL.pdf Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 33000 Stücke:
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3000+0.082 EUR
6000+0.074 EUR
9000+0.072 EUR
30000+0.07 EUR
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DMT10H015LFG-7 DMT10H015LFG-7 Diodes Incorporated DMT10H015LFG.pdf Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 108000 Stücke:
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2000+0.64 EUR
4000+0.6 EUR
6000+0.59 EUR
Mindestbestellmenge: 2000
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DMT10H015LPS-13 DMT10H015LPS-13 Diodes Incorporated DMT10H015LPS.pdf Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 107500 Stücke:
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2500+0.68 EUR
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DMT10H015LSS-13 DMT10H015LSS-13 Diodes Incorporated DMT10H015LSS.pdf Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 57500 Stücke:
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2500+0.71 EUR
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DMT6004LPS-13 DMT6004LPS-13 Diodes Incorporated DMT6004LPS.pdf Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 10000 Stücke:
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DMTH6010LK3-13 DMTH6010LK3-13 Diodes Incorporated DMTH6010LK3.pdf Description: MOSFET N-CH 60V 14.8A TO252
Produkt ist nicht verfügbar
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DMTH6010LPS-13 DMTH6010LPS-13 Diodes Incorporated DMTH6010LPS.pdf Description: MOSFET N-CH 60V 13.5A
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SBR5E45P5-13 SBR5E45P5-13 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR5E45P5-7 SBR5E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR5E45P5-7D SBR5E45P5-7D Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR8E45P5-7 SBR8E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 12000 Stücke:
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3000+0.31 EUR
4500+0.3 EUR
7500+0.29 EUR
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D14V0S1U2WS-7 D14V0S1U2WS-7 Diodes Incorporated D14V0S1U2WS.pdf Description: TVS DIODE 14VWM 26VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 360pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1300W (1.3kW)
Power Line Protection: No
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1000+0.16 EUR
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DMC2450UV-7 DMC2450UV-7 Diodes Incorporated DMC2450UV.pdf Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 5900 Stücke:
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25+0.72 EUR
40+0.44 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
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DMN63D8L-7 DMN63D8L-7 Diodes Incorporated DMN63D8L.pdf Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 209519 Stücke:
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56+0.32 EUR
89+0.2 EUR
170+0.1 EUR
500+0.076 EUR
1000+0.073 EUR
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DMNH10H028SK3-13 DMNH10H028SK3-13 Diodes Incorporated DMNH10H028SK3.pdf Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
auf Bestellung 195000 Stücke:
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6+3.26 EUR
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DMNH4006SK3-13 DMNH4006SK3-13 Diodes Incorporated DMNH4006SK3.pdf Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
auf Bestellung 12500 Stücke:
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7+2.83 EUR
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DMP10H4D2S-7 DMP10H4D2S-7 Diodes Incorporated DMP10H4D2S.pdf Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
auf Bestellung 15450 Stücke:
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28+0.63 EUR
46+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.16 EUR
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DMP510DL-7 DMP510DL-7 Diodes Incorporated DMP510DL.pdf Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
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60+0.3 EUR
113+0.16 EUR
500+0.13 EUR
1000+0.12 EUR
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DMT10H015LFG-7 DMT10H015LFG-7 Diodes Incorporated DMT10H015LFG.pdf Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
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DMT10H015LPS-13 DMT10H015LPS-13 Diodes Incorporated DMT10H015LPS.pdf Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 108220 Stücke:
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100+1.02 EUR
500+0.86 EUR
1000+0.81 EUR
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DMT10H015LSS-13 DMT10H015LSS-13 Diodes Incorporated DMT10H015LSS.pdf Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 58894 Stücke:
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11+1.65 EUR
100+1.08 EUR
500+0.87 EUR
1000+0.79 EUR
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DMT6004LPS-13 DMT6004LPS-13 Diodes Incorporated DMT6004LPS.pdf Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 13602 Stücke:
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10+2.08 EUR
100+1.41 EUR
500+1.13 EUR
1000+1.07 EUR
Mindestbestellmenge: 6
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DMTH6010LK3-13 DMTH6010LK3-13 Diodes Incorporated DMTH6010LK3.pdf Description: MOSFET N-CH 60V 14.8A TO252
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DMTH6010LPS-13 DMTH6010LPS-13 Diodes Incorporated DMTH6010LPS.pdf Description: MOSFET N-CH 60V 13.5A
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SBR5E45P5-13 SBR5E45P5-13 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR5E45P5-7 SBR5E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR5E45P5-7D SBR5E45P5-7D Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
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SBR8E45P5-7 SBR8E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE SBR 45V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 13400 Stücke:
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DMTH6010LPS-13 DMTH6010LPS-13 Diodes Incorporated DMTH6010LPS.pdf Description: MOSFET N-CH 60V 13.5A
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SBR5E45P5-13 SBR5E45P5-13 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR5E45P5-7 SBR5E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR5E45P5-7D SBR5E45P5-7D Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
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AL5801EV1 Diodes Incorporated AL5801.pdf Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL5802EV1 AL5802EV1 Diodes Incorporated AL5802.pdf Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8400EV1 Diodes Incorporated AL8400EV1-User-Guide-Issue-1.pdf Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8805EV1 Diodes Incorporated Description: EVAL BOARD FOR AL8805
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 30V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8805EV2 Diodes Incorporated Description: EVAL BOARD FOR AL8805
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV1 Diodes Incorporated Description: EVAL BOARD FOR AL8806
Packaging: Box
Features: Dimmable
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV4 Diodes Incorporated Description: EVAL BOARD FOR AL8806
Packaging: Box
Features: Dimmable
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV6 Diodes Incorporated Description: EVAL BOARD FOR AL8806
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.1A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8807AEV1 Diodes Incorporated Description: EVAL BOARD FOR AL8807A
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8807AEV3 Diodes Incorporated Description: EVAL BOARD FOR AL8807A
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 1A
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
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AL8808EV1 Diodes Incorporated AL8808EV1.pdf Description: BOARD LED DRIVER 680MA
Produkt ist nicht verfügbar
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AL8808EV2 Diodes Incorporated AL8808.pdf Description: EVAL BOARD FOR AL8808
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8808
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV4 Diodes Incorporated AL9910EV4-User-Guide-Issue-4.pdf Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 180mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV5 Diodes Incorporated AL9910EV5-User-Guide-Issue-3.pdf Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 240mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV6 Diodes Incorporated AL9910EV6-User-Guide-Issue-4.pdf Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 75mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Contents: Board(s)
Produkt ist nicht verfügbar
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SBRTF40U100CT SBRTF40U100CT Diodes Incorporated SBRTF40U100CT%28FP%29.pdf Description: DIODE ARR SBR 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBRTF40U100CTFP SBRTF40U100CTFP Diodes Incorporated SBRTF40U100CT(FP).pdf Description: DIODE RECT SB 100V 20A ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AH3763Q-P-A AH3763Q-P-A Diodes Incorporated AH3763Q.pdf Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
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AH3765Q-P-A Diodes Incorporated AH3765Q.pdf Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
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AH3766Q-P-A Diodes Incorporated AH3766Q.pdf Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
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AZ1117IH-5.0TRG1 AZ1117I.pdf
AZ1117IH-5.0TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
auf Bestellung 48685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
72+0.24 EUR
82+0.22 EUR
100+0.19 EUR
250+0.17 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 48
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AH5775-P-B AH5775.pdf
AH5775-P-B
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 2.5V-18V TO94
Packaging: Bulk
Package / Case: 4-SSIP
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 300mA
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 18V
Applications: Fan Motor Driver
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 18V
Supplier Device Package: TO-94
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
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DMC2450UV-7 DMC2450UV.pdf
DMC2450UV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
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DML1005LDS-7 DML1005LDS.pdf
DML1005LDS-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 3.8mOhm
Voltage - Load: 0.8V ~ 4V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Produkt ist nicht verfügbar
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DMN63D8L-7 DMN63D8L.pdf
DMN63D8L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 207000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.053 EUR
6000+0.05 EUR
9000+0.041 EUR
15000+0.039 EUR
30000+0.037 EUR
Mindestbestellmenge: 3000
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DMNH10H028SK3-13 DMNH10H028SK3.pdf
DMNH10H028SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.91 EUR
5000+0.87 EUR
12500+0.85 EUR
Mindestbestellmenge: 2500
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DMNH4006SK3-13 DMNH4006SK3.pdf
DMNH4006SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.24 EUR
5000+1.19 EUR
Mindestbestellmenge: 2500
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DMP10H4D2S-7 DMP10H4D2S.pdf
DMP10H4D2S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000
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DMP510DL-7 DMP510DL.pdf
DMP510DL-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.082 EUR
6000+0.074 EUR
9000+0.072 EUR
30000+0.07 EUR
Mindestbestellmenge: 3000
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DMT10H015LFG-7 DMT10H015LFG.pdf
DMT10H015LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.64 EUR
4000+0.6 EUR
6000+0.59 EUR
Mindestbestellmenge: 2000
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DMT10H015LPS-13 DMT10H015LPS.pdf
DMT10H015LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.68 EUR
5000+0.67 EUR
Mindestbestellmenge: 2500
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DMT10H015LSS-13 DMT10H015LSS.pdf
DMT10H015LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 57500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.71 EUR
5000+0.66 EUR
Mindestbestellmenge: 2500
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DMT6004LPS-13 DMT6004LPS.pdf
DMT6004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.91 EUR
5000+0.88 EUR
Mindestbestellmenge: 2500
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DMTH6010LK3-13 DMTH6010LK3.pdf
DMTH6010LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A TO252
Produkt ist nicht verfügbar
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DMTH6010LPS-13 DMTH6010LPS.pdf
DMTH6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-13 SBR5E45P5.pdf
SBR5E45P5-13
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-7 SBR5E45P5.pdf
SBR5E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-7D SBR5E45P5.pdf
SBR5E45P5-7D
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR8E45P5-7 SBR5E45P5.pdf
SBR8E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.32 EUR
3000+0.31 EUR
4500+0.3 EUR
7500+0.29 EUR
Mindestbestellmenge: 1500
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D14V0S1U2WS-7 D14V0S1U2WS.pdf
D14V0S1U2WS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 14VWM 26VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 360pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1300W (1.3kW)
Power Line Protection: No
auf Bestellung 17552 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
52+0.34 EUR
106+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 35
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DMC2450UV-7 DMC2450UV.pdf
DMC2450UV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
40+0.44 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 25
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DMN63D8L-7 DMN63D8L.pdf
DMN63D8L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 209519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
89+0.2 EUR
170+0.1 EUR
500+0.076 EUR
1000+0.073 EUR
Mindestbestellmenge: 56
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DMNH10H028SK3-13 DMNH10H028SK3.pdf
DMNH10H028SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
Mindestbestellmenge: 6
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DMNH4006SK3-13 DMNH4006SK3.pdf
DMNH4006SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
Mindestbestellmenge: 7
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DMP10H4D2S-7 DMP10H4D2S.pdf
DMP10H4D2S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
auf Bestellung 15450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
46+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
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DMP510DL-7 DMP510DL.pdf
DMP510DL-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 37118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
60+0.3 EUR
113+0.16 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
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DMT10H015LFG-7 DMT10H015LFG.pdf
DMT10H015LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 108296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
22+0.83 EUR
100+0.74 EUR
Mindestbestellmenge: 21
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DMT10H015LPS-13 DMT10H015LPS.pdf
DMT10H015LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 108220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
13+1.44 EUR
100+1.02 EUR
500+0.86 EUR
1000+0.81 EUR
Mindestbestellmenge: 9
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DMT10H015LSS-13 DMT10H015LSS.pdf
DMT10H015LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 58894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
11+1.65 EUR
100+1.08 EUR
500+0.87 EUR
1000+0.79 EUR
Mindestbestellmenge: 7
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DMT6004LPS-13 DMT6004LPS.pdf
DMT6004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 13602 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
10+2.08 EUR
100+1.41 EUR
500+1.13 EUR
1000+1.07 EUR
Mindestbestellmenge: 6
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DMTH6010LK3-13 DMTH6010LK3.pdf
DMTH6010LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A TO252
auf Bestellung 2197 Stücke:
Lieferzeit 10-14 Tag (e)
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DMTH6010LPS-13 DMTH6010LPS.pdf
DMTH6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-13 SBR5E45P5.pdf
SBR5E45P5-13
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-7 SBR5E45P5.pdf
SBR5E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-7D SBR5E45P5.pdf
SBR5E45P5-7D
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR8E45P5-7 SBR5E45P5.pdf
SBR8E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 13400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
25+0.72 EUR
100+0.57 EUR
500+0.43 EUR
Mindestbestellmenge: 17
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DMTH6010LPS-13 DMTH6010LPS.pdf
DMTH6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-13 SBR5E45P5.pdf
SBR5E45P5-13
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7 SBR5E45P5.pdf
SBR5E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-7D SBR5E45P5.pdf
SBR5E45P5-7D
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
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AL5801EV1 AL5801.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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AL5802EV1 AL5802.pdf
AL5802EV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8400EV1 AL8400EV1-User-Guide-Issue-1.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8805EV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8805
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 30V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8805EV2
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8805
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Packaging: Box
Features: Dimmable
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV4
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Packaging: Box
Features: Dimmable
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV6
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.1A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8807AEV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8807A
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8807AEV3
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8807A
Packaging: Box
Features: Dimmable
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 1A
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8808EV1 AL8808EV1.pdf
Hersteller: Diodes Incorporated
Description: BOARD LED DRIVER 680MA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8808EV2 AL8808.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8808
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8808
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV4 AL9910EV4-User-Guide-Issue-4.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 180mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV5 AL9910EV5-User-Guide-Issue-3.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Current - Output / Channel: 240mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV6 AL9910EV6-User-Guide-Issue-4.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 75mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBRTF40U100CT SBRTF40U100CT%28FP%29.pdf
SBRTF40U100CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBRTF40U100CTFP SBRTF40U100CT(FP).pdf
SBRTF40U100CTFP
Hersteller: Diodes Incorporated
Description: DIODE RECT SB 100V 20A ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AH3763Q-P-A AH3763Q.pdf
AH3763Q-P-A
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AH3765Q-P-A AH3765Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AH3766Q-P-A AH3766Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
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