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DMMT3904WQ-7-F DMMT3904WQ-7-F Diodes Incorporated DMMT3904W_Rev13-2_Feb2018.pdf Description: TRANS 2NPN 40V 200MA SOT-363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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DMN10H170SVTQ-7 DMN10H170SVTQ-7 Diodes Incorporated DMN10H170SVTQ.pdf Description: MOSFET N-CH 100V 2.6A TSOT26
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
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6000+0.3 EUR
9000+0.29 EUR
15000+0.27 EUR
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DMN2010UDZ-7 DMN2010UDZ-7 Diodes Incorporated DMN2010UDZ.pdf Description: MOSFET 2N-CH 20V 11A U-DFN2535-6
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DMN3026LVTQ-7 DMN3026LVTQ-7 Diodes Incorporated DMN3026LVTQ.pdf Description: MOSFET N-CH 30V 6.6A TSOT26
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DMN5L06WKQ-7 Diodes Incorporated Description: MOSFET N-CH 50V SOT323
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DMN63D1L-7 DMN63D1L-7 Diodes Incorporated DMN63D1L.pdf Description: MOSFET N-CH 60V 0.38A SOT23
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DMN63D1LW-7 DMN63D1LW-7 Diodes Incorporated DMN63D1LW.pdf Description: MOSFET N-CH 60V 0.38A SOT323
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DMN65D8LQ-7 DMN65D8LQ-7 Diodes Incorporated DMN65D8LQ.pdf Description: MOSFET N-CH 60V 310MA SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMN67D8L-7 DMN67D8L-7 Diodes Incorporated DMN67D8L.pdf Description: MOSFET N-CH 60V 210MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.82 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 340mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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9000+0.04 EUR
15000+0.038 EUR
21000+0.036 EUR
30000+0.034 EUR
75000+0.031 EUR
150000+0.029 EUR
300000+0.028 EUR
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DMP2066LDMQ-7 Diodes Incorporated Description: MOSFET P-CH 20V 4.6A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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6000+0.21 EUR
9000+0.2 EUR
15000+0.19 EUR
21000+0.18 EUR
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DMP2123LQ-7 DMP2123LQ-7 Diodes Incorporated DMP2123LQ.pdf Description: MOSFET P-CH 20V 3A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMT3009LDT-7 DMT3009LDT-7 Diodes Incorporated DMT3009LDT.pdf Description: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
Produkt ist nicht verfügbar
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FZT657QTA FZT657QTA Diodes Incorporated FZT657.pdf Description: TRANS NPN 300V 0.5A SOT223-3
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-223-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SBR8E60P5-7 SBR8E60P5-7 Diodes Incorporated SBR8E60P5.pdf Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 580 µA @ 60 V
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SBR8E60P5-7D SBR8E60P5-7D Diodes Incorporated SBR8E60P5.pdf Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 580 µA @ 60 V
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SBRT05U10LP-7B Diodes Incorporated SBRT05U10LP.pdf Description: DIODE SBR X1-DFN1006-2
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SBRT05U20LP-7B Diodes Incorporated SBRT05U20LP.pdf Description: DIODE SBR X1-DFN1006-2
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ZMR500QFTA ZMR500QFTA Diodes Incorporated ZMR-Q.pdf Description: IC REG LINEAR 5V 50MA SOT23
Produkt ist nicht verfügbar
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ZXMP10A17GQTA ZXMP10A17GQTA Diodes Incorporated ZXMP10A17GQ.pdf Description: MOSFET P-CH 100V 2.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Qualification: AEC-Q101
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2000+0.74 EUR
3000+0.71 EUR
5000+0.67 EUR
7000+0.66 EUR
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ZXTN4004ZQTA ZXTN4004ZQTA Diodes Incorporated ZXTN4004Z.pdf Description: TRANS NPN 150V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 250mV
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
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7000+0.28 EUR
10000+0.27 EUR
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PI3DPX1203ZHE PI3DPX1203ZHE Diodes Incorporated PI3DPX1203.pdf Description: IC REDRIVER DISPLAYPORT 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 8Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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PI3EQX10904ZHE PI3EQX10904ZHE Diodes Incorporated PI3EQX10904_PB.pdf Description: IC REDRIVER ETHERNET 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Ethernet
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Obsolete
Produkt ist nicht verfügbar
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PI6C557-03AQLE PI6C557-03AQLE Diodes Incorporated PI6C557-03AQ.pdf Description: IC CLOCK GENERATOR 16TSSOP
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10+6.05 EUR
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PT7C4337ACSE PT7C4337ACSE Diodes Incorporated PT7C4337A-4337AC.pdf Description: IC RTC CLK/CALENDAR I2C 16SOIC
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 16-SOIC
Current - Timekeeping (Max): 0.8µA @ 1.3V ~ 1.8V
DigiKey Programmable: Not Verified
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100+6.74 EUR
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PAM8945PJR PAM8945PJR Diodes Incorporated PAM8945.pdf Description: IC AMP G MONO 4W WQFN3020-12
Features: Short-Circuit and Thermal Protection, Shutdown
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWFQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class G
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.2V
Max Output Power x Channels @ Load: 4W x 1 @ 4Ohm
Supplier Device Package: W-QFN2030-12
Part Status: Active
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PAM8945PJR PAM8945PJR Diodes Incorporated PAM8945.pdf Description: IC AMP G MONO 4W WQFN3020-12
Features: Short-Circuit and Thermal Protection, Shutdown
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWFQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class G
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.2V
Max Output Power x Channels @ Load: 4W x 1 @ 4Ohm
Supplier Device Package: W-QFN2030-12
Part Status: Active
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25+1.19 EUR
100+1.05 EUR
250+0.98 EUR
500+0.95 EUR
1000+0.93 EUR
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MMBF170Q-7-F MMBF170Q-7-F Diodes Incorporated MMBF170Q.pdf Description: MOSFET N-CH 60V 500MA SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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38+0.48 EUR
60+0.3 EUR
123+0.14 EUR
500+0.13 EUR
1000+0.12 EUR
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74LVT245BBT20-13 74LVT245BBT20-13 Diodes Incorporated 74LVT245BB.pdf Description: IC TXRX NON-INVERT 3.6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-TSSOP
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74LVT245BBT20-13 74LVT245BBT20-13 Diodes Incorporated 74LVT245BB.pdf Description: IC TXRX NON-INVERT 3.6V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-TSSOP
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74LVT245BBQ20-13 74LVT245BBQ20-13 Diodes Incorporated Description: IC TXRX NON-INVERT 3.6V 20DFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: V-QFN4525-20
Produkt ist nicht verfügbar
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BZT585B5V1TQ-7 BZT585B5V1TQ-7 Diodes Incorporated BZT585B5V1TQ-BZT585B43TQ.pdf Description: DIODE ZENER 5.1V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
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BZT585B5V1TQ-7 BZT585B5V1TQ-7 Diodes Incorporated BZT585B5V1TQ-BZT585B43TQ.pdf Description: DIODE ZENER 5.1V 350MW SOD523
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
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AL1696-30AS7-13 AL1696-30AS7-13 Diodes Incorporated AL1696.pdf Description: IC LED DRIVER OFFL TRIAC 3A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 3A
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
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AL1696-20BS7-13 AL1696-20BS7-13 Diodes Incorporated AL1696.pdf Description: LED OFFLINE DRIVER,SO-7
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AL1696-20CS7-13 AL1696-20CS7-13 Diodes Incorporated AL1696.pdf Description: LED OFFLINE DRIVER,SO-7
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AL1696-20BS7-13 AL1696-20BS7-13 Diodes Incorporated AL1696.pdf Description: LED OFFLINE DRIVER,SO-7
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AL1696-20CS7-13 AL1696-20CS7-13 Diodes Incorporated AL1696.pdf Description: LED OFFLINE DRIVER,SO-7
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MMSZ5231B-13-F MMSZ5231B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 5.1V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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MMSZ5234B-13-F MMSZ5234B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 6.2V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Produkt ist nicht verfügbar
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MMSZ5238B-13-F MMSZ5238B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 8.7V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 105°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
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MMSZ5242B-13-F MMSZ5242B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 12V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
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AP9214LA-AH-HSB-7 AP9214LA-AH-HSB-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
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AP9214LA-AH-HSBR-7 AP9214LA-AH-HSBR-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: U-DFN2535-6
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Produkt ist nicht verfügbar
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AP9214L-AH-HSB-7 AP9214L-AH-HSB-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: U-DFN2535-6
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AP9214LA-AH-HSB-7 AP9214LA-AH-HSB-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: U-DFN2535-6
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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AP9214LA-AH-HSBR-7 AP9214LA-AH-HSBR-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: U-DFN2535-6
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP9214L-AH-HSB-7 AP9214L-AH-HSB-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: U-DFN2535-6
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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AP4341SNTR-G1 AP4341SNTR-G1 Diodes Incorporated AP4341S.pdf Description: ACDC PSR ACCEL SOT23
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 Mindestbestellmenge: 3000 Stücke
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AP4341SNTR-G1 AP4341SNTR-G1 Diodes Incorporated AP4341S.pdf Description: ACDC PSR ACCEL SOT23
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AP4341SNTR-G1 AP4341SNTR-G1 Diodes Incorporated AP4341S.pdf Description: ACDC PSR ACCEL SOT23
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1N5819HW1-7-F 1N5819HW1-7-F Diodes Incorporated 1N5819HW1.pdf Description: DIODE SBR 40V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Super Barrier
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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BCM857BS-7-F BCM857BS-7-F Diodes Incorporated BCM857BS.pdf Description: TRANS 2PNP 45V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
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125+0.14 EUR
134+0.13 EUR
500+0.11 EUR
1000+0.096 EUR
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DMN2010UDZ-7 DMN2010UDZ-7 Diodes Incorporated DMN2010UDZ.pdf Description: MOSFET 2N-CH 20V 11A U-DFN2535-6
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DMP6050SFG-13 DMP6050SFG-13 Diodes Incorporated DMP6050SFG.pdf Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
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DMT6009LK3-13 DMT6009LK3-13 Diodes Incorporated DMT6009LK3.pdf Description: MOSFET N-CH 60V 13.3A/57A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
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DMT6015LPS-13 DMT6015LPS-13 Diodes Incorporated DMT6015LPS.pdf Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.16W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
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DMTH4004SPS-13 DMTH4004SPS-13 Diodes Incorporated DMTH4004SPS.pdf Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7463 Stücke:
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DMTH4007LK3-13 DMTH4007LK3-13 Diodes Incorporated DMTH4007LK3.pdf Description: MOSFET N-CH 40V 16.8A/70A TO252
Produkt ist nicht verfügbar
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DMTH4007LPS-13 DMTH4007LPS-13 Diodes Incorporated DMTH4007LPS.pdf Description: MOSFET N-CH 40V 15.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
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15+1.19 EUR
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500+0.73 EUR
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DMTH4007SPS-13 DMTH4007SPS-13 Diodes Incorporated DMTH4007SPS.pdf Description: MOSFET BVDSS: 31V 40V POWERDI506
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DMMT3904WQ-7-F DMMT3904W_Rev13-2_Feb2018.pdf
DMMT3904WQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2NPN 40V 200MA SOT-363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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AnzahlPreis
3000+0.22 EUR
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DMN10H170SVTQ-7 DMN10H170SVTQ.pdf
DMN10H170SVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2.6A TSOT26
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
auf Bestellung 390000 Stücke:
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AnzahlPreis
3000+0.31 EUR
6000+0.3 EUR
9000+0.29 EUR
15000+0.27 EUR
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DMN2010UDZ-7 DMN2010UDZ.pdf
DMN2010UDZ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 11A U-DFN2535-6
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DMN3026LVTQ-7 DMN3026LVTQ.pdf
DMN3026LVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.6A TSOT26
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DMN5L06WKQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V SOT323
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DMN63D1L-7 DMN63D1L.pdf
DMN63D1L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 0.38A SOT23
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DMN63D1LW-7 DMN63D1LW.pdf
DMN63D1LW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 0.38A SOT323
Produkt ist nicht verfügbar
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DMN65D8LQ-7 DMN65D8LQ.pdf
DMN65D8LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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AnzahlPreis
3000+0.058 EUR
6000+0.052 EUR
9000+0.049 EUR
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DMN67D8L-7 DMN67D8L.pdf
DMN67D8L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 210MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.82 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 340mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 1329000 Stücke:
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AnzahlPreis
3000+0.047 EUR
6000+0.043 EUR
9000+0.04 EUR
15000+0.038 EUR
21000+0.036 EUR
30000+0.034 EUR
75000+0.031 EUR
150000+0.029 EUR
300000+0.028 EUR
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DMP2066LDMQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 402000 Stücke:
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AnzahlPreis
3000+0.23 EUR
6000+0.21 EUR
9000+0.2 EUR
15000+0.19 EUR
21000+0.18 EUR
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DMP2123LQ-7 DMP2123LQ.pdf
DMP2123LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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AnzahlPreis
3000+0.18 EUR
6000+0.17 EUR
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DMT3009LDT-7 DMT3009LDT.pdf
DMT3009LDT-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 30A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
Part Status: Active
Produkt ist nicht verfügbar
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FZT657QTA FZT657.pdf
FZT657QTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 300V 0.5A SOT223-3
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-223-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SBR8E60P5-7 SBR8E60P5.pdf
SBR8E60P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 580 µA @ 60 V
auf Bestellung 31500 Stücke:
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AnzahlPreis
1500+0.39 EUR
3000+0.35 EUR
7500+0.33 EUR
10500+0.31 EUR
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SBR8E60P5-7D SBR8E60P5.pdf
SBR8E60P5-7D
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 580 µA @ 60 V
auf Bestellung 4500 Stücke:
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AnzahlPreis
1500+0.39 EUR
3000+0.35 EUR
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SBRT05U10LP-7B SBRT05U10LP.pdf
Hersteller: Diodes Incorporated
Description: DIODE SBR X1-DFN1006-2
Produkt ist nicht verfügbar
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SBRT05U20LP-7B SBRT05U20LP.pdf
Hersteller: Diodes Incorporated
Description: DIODE SBR X1-DFN1006-2
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ZMR500QFTA ZMR-Q.pdf
ZMR500QFTA
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 50MA SOT23
Produkt ist nicht verfügbar
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ZXMP10A17GQTA ZXMP10A17GQ.pdf
ZXMP10A17GQTA
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 2.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 74000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+0.81 EUR
2000+0.74 EUR
3000+0.71 EUR
5000+0.67 EUR
7000+0.66 EUR
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ZXTN4004ZQTA ZXTN4004Z.pdf
ZXTN4004ZQTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 150V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 250mV
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
auf Bestellung 18000 Stücke:
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1000+0.36 EUR
2000+0.32 EUR
3000+0.31 EUR
5000+0.29 EUR
7000+0.28 EUR
10000+0.27 EUR
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PI3DPX1203ZHE PI3DPX1203.pdf
PI3DPX1203ZHE
Hersteller: Diodes Incorporated
Description: IC REDRIVER DISPLAYPORT 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 8Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Produkt ist nicht verfügbar
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PI3EQX10904ZHE PI3EQX10904_PB.pdf
PI3EQX10904ZHE
Hersteller: Diodes Incorporated
Description: IC REDRIVER ETHERNET 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Ethernet
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Obsolete
Produkt ist nicht verfügbar
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PI6C557-03AQLE PI6C557-03AQ.pdf
PI6C557-03AQLE
Hersteller: Diodes Incorporated
Description: IC CLOCK GENERATOR 16TSSOP
auf Bestellung 41 Stücke:
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AnzahlPreis
3+6.72 EUR
10+6.05 EUR
25+5.72 EUR
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PT7C4337ACSE PT7C4337A-4337AC.pdf
PT7C4337ACSE
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 16SOIC
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 16-SOIC
Current - Timekeeping (Max): 0.8µA @ 1.3V ~ 1.8V
DigiKey Programmable: Not Verified
auf Bestellung 120 Stücke:
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2+13.01 EUR
10+8.96 EUR
25+7.91 EUR
100+6.74 EUR
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PAM8945PJR PAM8945.pdf
PAM8945PJR
Hersteller: Diodes Incorporated
Description: IC AMP G MONO 4W WQFN3020-12
Features: Short-Circuit and Thermal Protection, Shutdown
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWFQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class G
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.2V
Max Output Power x Channels @ Load: 4W x 1 @ 4Ohm
Supplier Device Package: W-QFN2030-12
Part Status: Active
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3000+0.87 EUR
6000+0.85 EUR
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PAM8945PJR PAM8945.pdf
PAM8945PJR
Hersteller: Diodes Incorporated
Description: IC AMP G MONO 4W WQFN3020-12
Features: Short-Circuit and Thermal Protection, Shutdown
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWFQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class G
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.2V
Max Output Power x Channels @ Load: 4W x 1 @ 4Ohm
Supplier Device Package: W-QFN2030-12
Part Status: Active
auf Bestellung 51385 Stücke:
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AnzahlPreis
10+1.81 EUR
14+1.31 EUR
25+1.19 EUR
100+1.05 EUR
250+0.98 EUR
500+0.95 EUR
1000+0.93 EUR
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MMBF170Q-7-F MMBF170Q.pdf
MMBF170Q-7-F
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 500MA SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 717848 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
38+0.48 EUR
60+0.3 EUR
123+0.14 EUR
500+0.13 EUR
1000+0.12 EUR
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74LVT245BBT20-13 74LVT245BB.pdf
74LVT245BBT20-13
Hersteller: Diodes Incorporated
Description: IC TXRX NON-INVERT 3.6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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74LVT245BBT20-13 74LVT245BB.pdf
74LVT245BBT20-13
Hersteller: Diodes Incorporated
Description: IC TXRX NON-INVERT 3.6V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
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74LVT245BBQ20-13
74LVT245BBQ20-13
Hersteller: Diodes Incorporated
Description: IC TXRX NON-INVERT 3.6V 20DFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: V-QFN4525-20
Produkt ist nicht verfügbar
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BZT585B5V1TQ-7 BZT585B5V1TQ-BZT585B43TQ.pdf
BZT585B5V1TQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 350MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 477000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.054 EUR
6000+0.052 EUR
9000+0.051 EUR
15000+0.049 EUR
21000+0.045 EUR
30000+0.043 EUR
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BZT585B5V1TQ-7 BZT585B5V1TQ-BZT585B43TQ.pdf
BZT585B5V1TQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 350MW SOD523
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 479202 Stücke:
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AnzahlPreis
72+0.25 EUR
100+0.18 EUR
205+0.086 EUR
500+0.084 EUR
1000+0.081 EUR
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AL1696-30AS7-13 AL1696.pdf
AL1696-30AS7-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 3A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 3A
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 2076 Stücke:
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AnzahlPreis
18+0.99 EUR
21+0.85 EUR
25+0.79 EUR
100+0.64 EUR
250+0.59 EUR
500+0.5 EUR
1000+0.39 EUR
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AL1696-20BS7-13 AL1696.pdf
AL1696-20BS7-13
Hersteller: Diodes Incorporated
Description: LED OFFLINE DRIVER,SO-7
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AL1696-20CS7-13 AL1696.pdf
AL1696-20CS7-13
Hersteller: Diodes Incorporated
Description: LED OFFLINE DRIVER,SO-7
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AL1696-20BS7-13 AL1696.pdf
AL1696-20BS7-13
Hersteller: Diodes Incorporated
Description: LED OFFLINE DRIVER,SO-7
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AL1696-20CS7-13 AL1696.pdf
AL1696-20CS7-13
Hersteller: Diodes Incorporated
Description: LED OFFLINE DRIVER,SO-7
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MMSZ5231B-13-F ds18010.pdf
MMSZ5231B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 30000 Stücke:
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AnzahlPreis
10000+0.047 EUR
20000+0.04 EUR
30000+0.039 EUR
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MMSZ5234B-13-F ds18010.pdf
MMSZ5234B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.2V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Produkt ist nicht verfügbar
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MMSZ5238B-13-F ds18010.pdf
MMSZ5238B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.7V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 105°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
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MMSZ5242B-13-F ds18010.pdf
MMSZ5242B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
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AP9214LA-AH-HSB-7 AP9214L.pdf
AP9214LA-AH-HSB-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.63 EUR
6000+0.6 EUR
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AP9214LA-AH-HSBR-7 AP9214L.pdf
AP9214LA-AH-HSBR-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: U-DFN2535-6
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Produkt ist nicht verfügbar
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AP9214L-AH-HSB-7 AP9214L.pdf
AP9214L-AH-HSB-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: U-DFN2535-6
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.68 EUR
Mindestbestellmenge: 3000 Stücke
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AP9214LA-AH-HSB-7 AP9214L.pdf
AP9214LA-AH-HSB-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: U-DFN2535-6
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 9698 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.5 EUR
14+1.33 EUR
25+1.26 EUR
100+1.04 EUR
250+0.97 EUR
500+0.86 EUR
1000+0.68 EUR
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AP9214LA-AH-HSBR-7 AP9214L.pdf
AP9214LA-AH-HSBR-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: U-DFN2535-6
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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AP9214L-AH-HSB-7 AP9214L.pdf
AP9214L-AH-HSB-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Part Status: Active
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: U-DFN2535-6
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -40°C ~ 85°C (TA)
Function: Battery Protection
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5053 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.6 EUR
13+1.43 EUR
25+1.36 EUR
100+1.11 EUR
250+1.04 EUR
500+0.92 EUR
1000+0.73 EUR
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AP4341SNTR-G1 AP4341S.pdf
AP4341SNTR-G1
Hersteller: Diodes Incorporated
Description: ACDC PSR ACCEL SOT23
Produkt ist nicht verfügbar
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AP4341SNTR-G1 AP4341S.pdf
AP4341SNTR-G1
Hersteller: Diodes Incorporated
Description: ACDC PSR ACCEL SOT23
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AP4341SNTR-G1 AP4341S.pdf
AP4341SNTR-G1
Hersteller: Diodes Incorporated
Description: ACDC PSR ACCEL SOT23
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1N5819HW1-7-F 1N5819HW1.pdf
1N5819HW1-7-F
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Super Barrier
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
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BCM857BS-7-F BCM857BS.pdf
BCM857BS-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 45V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 31775 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
125+0.14 EUR
134+0.13 EUR
500+0.11 EUR
1000+0.096 EUR
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DMN2010UDZ-7 DMN2010UDZ.pdf
DMN2010UDZ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 11A U-DFN2535-6
auf Bestellung 10644 Stücke:
Lieferzeit 10-14 Tag (e)
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DMP6050SFG-13 DMP6050SFG.pdf
DMP6050SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
auf Bestellung 7465 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+1.65 EUR
18+1.03 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.47 EUR
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DMT6009LK3-13 DMT6009LK3.pdf
DMT6009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.3A/57A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 1308 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.46 EUR
12+1.56 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.75 EUR
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DMT6015LPS-13 DMT6015LPS.pdf
DMT6015LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.16W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
auf Bestellung 7488 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.16 EUR
13+1.36 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
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DMTH4004SPS-13 DMTH4004SPS.pdf
DMTH4004SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7463 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.36 EUR
12+1.59 EUR
100+1.12 EUR
500+0.91 EUR
1000+0.84 EUR
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DMTH4007LK3-13 DMTH4007LK3.pdf
DMTH4007LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 16.8A/70A TO252
Produkt ist nicht verfügbar
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DMTH4007LPS-13 DMTH4007LPS.pdf
DMTH4007LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 15.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.46 EUR
15+1.19 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.66 EUR
Mindestbestellmenge: 13 Stücke
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DMTH4007SPS-13 DMTH4007SPS.pdf
DMTH4007SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V 40V POWERDI506
Produkt ist nicht verfügbar
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