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DMN1150UFL3-7 DMN1150UFL3-7 Diodes Incorporated DMN1150UFL3.pdf Description: MOSFET 2N-CH 12V 2A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 12V
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMN2008LFU-7 DMN2008LFU-7 Diodes Incorporated DMN2008LFU.pdf Description: MOSFET 2N-CH 20V 14.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
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DMP6350S-7 DMP6350S-7 Diodes Incorporated DMP6350S.pdf Description: MOSFET P-CH 60V 1.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 900mA, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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DMT3006LFG-7 DMT3006LFG-7 Diodes Incorporated DMT3006LFG.pdf Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
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DMT3006LPS-13 DMT3006LPS-13 Diodes Incorporated DMT3006LPS.pdf Description: MOSFET N-CH 30V 16A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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12500+0.37 EUR
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25000+0.35 EUR
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DMT3020LFDB-7 DMT3020LFDB-7 Diodes Incorporated DMT3020LFDB.pdf Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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DMT3020LFDF-7 DMT3020LFDF-7 Diodes Incorporated DMT3020LFDF.pdf Description: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
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DMT4004LPS-13 DMT4004LPS-13 Diodes Incorporated DMT4004LPS.pdf Description: MOSFET N-CH 40V 26A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
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DMT6005LPS-13 DMT6005LPS-13 Diodes Incorporated DMT6005LPS.pdf Description: MOSFET N-CHA 60V 17.9A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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DMT6005LSS-13 DMT6005LSS-13 Diodes Incorporated DMT6005LSS.pdf Description: MOSFET N-CH 60V 13.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
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DMT6009LCT DMT6009LCT Diodes Incorporated DMT6009LCT.pdf Description: MOSFET N-CH 60V 37.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
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500+0.92 EUR
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DMT6009LPS-13 DMT6009LPS-13 Diodes Incorporated DMT6009LPS.pdf Description: MOSFET N-CHA 60V 10.6A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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DMT6015LSS-13 DMT6015LSS-13 Diodes Incorporated DMT6015LSS.pdf Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
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25000+0.44 EUR
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DMT6017LSS-13 DMT6017LSS-13 Diodes Incorporated DMT6017LSS.pdf Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Produkt ist nicht verfügbar
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DMTH6009LPS-13 DMTH6009LPS-13 Diodes Incorporated DMTH6009LPS.pdf Description: MOSFET N-CH 60V PWRDI5060
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMTH6010LPD-13 DMTH6010LPD-13 Diodes Incorporated DMTH6010LPD.pdf Description: MOSFET 2N-CH 60V 13.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
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SBRT3U60SAF-13 SBRT3U60SAF-13 Diodes Incorporated SBRT3U60SAF.pdf Description: DIODE SBR 60V 3A SMAF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
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SBRT40V100CTE SBRT40V100CTE Diodes Incorporated SBRT40V100CT.pdf Description: DIODE ARR SBR 100V 20A TO262
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-262
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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100+2.21 EUR
500+1.87 EUR
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BAS16HTW-13 BAS16HTW-13 Diodes Incorporated BAS16HTW.pdf Description: DIODE ARRAY GP 100V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BAS28-7 BAS28-7 Diodes Incorporated BAS28.pdf Description: DIODE ARRAY GP 85V 215MA SOT-143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-143
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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BCR401UW6-7 BCR401UW6-7 Diodes Incorporated BCR401UW6.pdf Description: IC LED DRVR LIN PWM 100MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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60+0.36 EUR
68+0.31 EUR
100+0.26 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
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BCR402UW6-7 BCR402UW6-7 Diodes Incorporated BCR402UW6.pdf Description: IC LED DRVR LIN PWM 100MA SOT26
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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60+0.36 EUR
67+0.31 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
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BCR405UW6-7 BCR405UW6-7 Diodes Incorporated BCR405UW6.pdf Description: IC LED DRVR LIN PWM 100MA SOT26
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): No
Current - Output / Channel: 50mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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DM1231-02SO-7 DM1231-02SO-7 Diodes Incorporated Description: TVS DIODE 5VWM 14VC SOT26
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-26
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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DMC3730UFL3-7 DMC3730UFL3-7 Diodes Incorporated DMC3730UFL3.pdf Description: MOSFET N/P-CH 30V 6DFN
Part Status: Active
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 35669 Stücke:
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DMG2301LK-7 DMG2301LK-7 Diodes Incorporated DMG2301LK.pdf Description: MOSFET P-CH 20V 2.4A SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 32906 Stücke:
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DMHC6070LSD-13 DMHC6070LSD-13 Diodes Incorporated DMHC6070LSD.pdf Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DMN10H700S-7 DMN10H700S-7 Diodes Incorporated DMN10H700S.pdf Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
auf Bestellung 31696 Stücke:
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DMN1150UFL3-7 DMN1150UFL3-7 Diodes Incorporated DMN1150UFL3.pdf Description: MOSFET 2N-CH 12V 2A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1310-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2008LFU-7 DMN2008LFU-7 Diodes Incorporated DMN2008LFU.pdf Description: MOSFET 2N-CH 20V 14.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 3590 Stücke:
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11+1.95 EUR
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DMP6350S-7 DMP6350S-7 Diodes Incorporated DMP6350S.pdf Description: MOSFET P-CH 60V 1.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 900mA, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 8435 Stücke:
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DMT3006LFG-7 DMT3006LFG-7 Diodes Incorporated DMT3006LFG.pdf Description: MOSFET N-CH 30V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3455 Stücke:
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15+1.49 EUR
100+0.99 EUR
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DMT3006LPS-13 DMT3006LPS-13 Diodes Incorporated DMT3006LPS.pdf Description: MOSFET N-CH 30V 16A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 66458 Stücke:
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500+0.56 EUR
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DMT3020LFDB-7 DMT3020LFDB-7 Diodes Incorporated DMT3020LFDB.pdf Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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17+1.26 EUR
100+0.82 EUR
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DMT3020LFDF-7 DMT3020LFDF-7 Diodes Incorporated DMT3020LFDF.pdf Description: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
auf Bestellung 2469 Stücke:
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21+1.02 EUR
100+0.67 EUR
500+0.51 EUR
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DMT4004LPS-13 DMT4004LPS-13 Diodes Incorporated DMT4004LPS.pdf Description: MOSFET N-CH 40V 26A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 356008 Stücke:
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13+1.71 EUR
100+1.2 EUR
500+0.98 EUR
1000+0.89 EUR
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DMT6005LPS-13 DMT6005LPS-13 Diodes Incorporated DMT6005LPS.pdf Description: MOSFET N-CHA 60V 17.9A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 161 Stücke:
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11+2.07 EUR
100+1.38 EUR
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DMT6005LSS-13 DMT6005LSS-13 Diodes Incorporated DMT6005LSS.pdf Description: MOSFET N-CH 60V 13.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
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DMT6009LPS-13 DMT6009LPS-13 Diodes Incorporated DMT6009LPS.pdf Description: MOSFET N-CHA 60V 10.6A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2801 Stücke:
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7+3.2 EUR
11+2.02 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.96 EUR
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DMT6015LSS-13 DMT6015LSS-13 Diodes Incorporated DMT6015LSS.pdf Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
auf Bestellung 197513 Stücke:
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10+2.2 EUR
16+1.38 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
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DMT6017LSS-13 DMT6017LSS-13 Diodes Incorporated DMT6017LSS.pdf Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
auf Bestellung 3010 Stücke:
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9+2.39 EUR
14+1.5 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.7 EUR
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DMTH6009LPS-13 DMTH6009LPS-13 Diodes Incorporated DMTH6009LPS.pdf Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
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100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
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DMTH6010LPD-13 DMTH6010LPD-13 Diodes Incorporated DMTH6010LPD.pdf Description: MOSFET 2N-CH 60V 13.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
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SBRT3U60SAF-13 SBRT3U60SAF-13 Diodes Incorporated SBRT3U60SAF.pdf Description: DIODE SBR 60V 3A SMAF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
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D12V0H1U2LP1610-7 D12V0H1U2LP1610-7 Diodes Incorporated D12V0H1U2LP1610.pdf Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 350pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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D20V0L1B2LP-7B D20V0L1B2LP-7B Diodes Incorporated D20V0L1B2LP.pdf Description: TVS DIODE 20VWM 34V X1DFN10062
Power Line Protection: No
Power - Peak Pulse: 68W
Voltage - Clamping (Max) @ Ipp: 34V
Voltage - Breakdown (Min): 21V
Qualification: AEC-Q101
Grade: Automotive
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 20V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 7pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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D24V0L1B2LP-7B D24V0L1B2LP-7B Diodes Incorporated D24V0L1B2LP.pdf Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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D26V0H1U2LP16-7 D26V0H1U2LP16-7 Diodes Incorporated D26V0H1U2LP16.pdf Description: TVS DIODE 26VWM 44VC U-DFN1616-2
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D5V0P4UR6SO-7 D5V0P4UR6SO-7 Diodes Incorporated D5V0P4UR6SO.pdf Description: TVS DIODE 3.3VWM 6VC SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4.5V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: Yes
Part Status: Active
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D5V0P4URL6SO-7 D5V0P4URL6SO-7 Diodes Incorporated D5V0P4URL6SO.pdf Description: TVS DIODE 3.3VWM 6VC SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 2.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4.5V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: Yes
Part Status: Active
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D12V0H1U2LP1610-7 D12V0H1U2LP1610-7 Diodes Incorporated D12V0H1U2LP1610.pdf Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 350pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
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D20V0L1B2LP-7B D20V0L1B2LP-7B Diodes Incorporated D20V0L1B2LP.pdf Description: TVS DIODE 20VWM 34V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V
Voltage - Clamping (Max) @ Ipp: 34V
Power - Peak Pulse: 68W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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D24V0L1B2LP-7B D24V0L1B2LP-7B Diodes Incorporated D24V0L1B2LP.pdf Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 23681 Stücke:
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D26V0H1U2LP16-7 D26V0H1U2LP16-7 Diodes Incorporated D26V0H1U2LP16.pdf Description: TVS DIODE 26VWM 44VC U-DFN1616-2
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500+0.3 EUR
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D5V0P4UR6SO-7 D5V0P4UR6SO-7 Diodes Incorporated D5V0P4UR6SO.pdf Description: TVS DIODE 3.3VWM 6VC SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4.5V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: Yes
Part Status: Active
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D5V0P4URL6SO-7 D5V0P4URL6SO-7 Diodes Incorporated D5V0P4URL6SO.pdf Description: TVS DIODE 3.3VWM 6VC SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 2.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4.5V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: Yes
Part Status: Active
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GC1200052 GC1200052 Diodes Incorporated GC1200052_B.pdf Description: CRYSTAL 12.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.165" (4.20mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 12 MHz
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GC1200056 GC1200056 Diodes Incorporated GC1200056_B.pdf Description: CRYSTAL 12.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.165" (4.20mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 12 MHz
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GC2500081 GC2500081 Diodes Incorporated GC2500081_D.pdf Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.165" (4.20mm)
ESR (Equivalent Series Resistance): 20 Ohms
Frequency: 25 MHz
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GC2500164 GC2500164 Diodes Incorporated GC2500164_A.pdf Description: CRYSTAL 25.0000MHZ 18PF SMD
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 40 Ohms
Height - Seated (Max): 0.165" (4.20mm)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±10ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Load Capacitance: 18pF
Package / Case: HC-49/US
Packaging: Tape & Reel (TR)
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DMN1150UFL3-7 DMN1150UFL3.pdf
DMN1150UFL3-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 12V 2A 6DFN
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 12V
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN2008LFU-7 DMN2008LFU.pdf
DMN2008LFU-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 14.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
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AnzahlPrivatkunde
3000+0.48 EUR
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DMP6350S-7 DMP6350S.pdf
DMP6350S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 1.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 900mA, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.3 EUR
6000+0.27 EUR
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DMT3006LFG-7 DMT3006LFG.pdf
DMT3006LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
2000+0.63 EUR
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DMT3006LPS-13 DMT3006LPS.pdf
DMT3006LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 16A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 65000 Stücke:
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2500+0.45 EUR
5000+0.42 EUR
7500+0.39 EUR
12500+0.37 EUR
17500+0.36 EUR
25000+0.35 EUR
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DMT3020LFDB-7 DMT3020LFDB.pdf
DMT3020LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.5 EUR
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DMT3020LFDF-7 DMT3020LFDF.pdf
DMT3020LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
Produkt ist nicht verfügbar
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DMT4004LPS-13 DMT4004LPS.pdf
DMT4004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 26A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 355000 Stücke:
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2500+0.81 EUR
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DMT6005LPS-13 DMT6005LPS.pdf
DMT6005LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHA 60V 17.9A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT6005LSS-13 DMT6005LSS.pdf
DMT6005LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
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2500+1.23 EUR
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DMT6009LCT DMT6009LCT.pdf
DMT6009LCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 37.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 618 Stücke:
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50+1.32 EUR
100+1.17 EUR
500+0.92 EUR
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DMT6009LPS-13 DMT6009LPS.pdf
DMT6009LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHA 60V 10.6A POWERDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMT6015LSS-13 DMT6015LSS.pdf
DMT6015LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
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2500+0.57 EUR
5000+0.52 EUR
7500+0.5 EUR
12500+0.48 EUR
17500+0.46 EUR
25000+0.44 EUR
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DMT6017LSS-13 DMT6017LSS.pdf
DMT6017LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Produkt ist nicht verfügbar
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DMTH6009LPS-13 DMTH6009LPS.pdf
DMTH6009LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 320000 Stücke:
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2500+0.61 EUR
5000+0.56 EUR
7500+0.54 EUR
12500+0.52 EUR
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DMTH6010LPD-13 DMTH6010LPD.pdf
DMTH6010LPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 13.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
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2500+0.87 EUR
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SBRT3U60SAF-13 SBRT3U60SAF.pdf
SBRT3U60SAF-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMAF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 100000 Stücke:
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10000+0.23 EUR
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SBRT40V100CTE SBRT40V100CT.pdf
SBRT40V100CTE
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 20A TO262
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-262
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
auf Bestellung 1400 Stücke:
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7+3.36 EUR
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100+2.21 EUR
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BAS16HTW-13 BAS16HTW.pdf
BAS16HTW-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 100V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 196 Stücke:
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35+0.61 EUR
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BAS28-7 BAS28.pdf
BAS28-7
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 85V 215MA SOT-143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-143
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BCR401UW6-7 BCR401UW6.pdf
BCR401UW6-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 100MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 25kHz
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Min): 1.4V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 31488 Stücke:
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40+0.52 EUR
60+0.36 EUR
68+0.31 EUR
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500+0.24 EUR
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BCR402UW6-7 BCR402UW6.pdf
BCR402UW6-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 100MA SOT26
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): Yes
Current - Output / Channel: 100mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 11620 Stücke:
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40+0.52 EUR
60+0.36 EUR
67+0.31 EUR
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500+0.24 EUR
1000+0.23 EUR
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BCR405UW6-7 BCR405UW6.pdf
BCR405UW6-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 100MA SOT26
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 1.4V
Dimming: PWM
Supplier Device Package: SOT-26
Internal Switch(s): No
Current - Output / Channel: 50mA
Applications: Lighting, Signage
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Linear
Frequency: 25kHz
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 40V
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 723335 Stücke:
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32+0.67 EUR
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1000+0.29 EUR
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DM1231-02SO-7
DM1231-02SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 5VWM 14VC SOT26
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-26
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Applications: HDMI
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 108639 Stücke:
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33+0.65 EUR
49+0.43 EUR
100+0.3 EUR
500+0.23 EUR
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DMC3730UFL3-7 DMC3730UFL3.pdf
DMC3730UFL3-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6DFN
Part Status: Active
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 35669 Stücke:
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24+0.9 EUR
38+0.56 EUR
100+0.36 EUR
500+0.26 EUR
1000+0.24 EUR
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DMG2301LK-7 DMG2301LK.pdf
DMG2301LK-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.4A SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 32906 Stücke:
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25+0.83 EUR
41+0.51 EUR
100+0.24 EUR
500+0.21 EUR
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DMHC6070LSD-13 DMHC6070LSD.pdf
DMHC6070LSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 3.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, 618pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel (Full Bridge)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 6573 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.11 EUR
100+1.42 EUR
500+1.12 EUR
1000+1.02 EUR
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DMN10H700S-7 DMN10H700S.pdf
DMN10H700S-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
auf Bestellung 31696 Stücke:
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32+0.65 EUR
100+0.37 EUR
500+0.25 EUR
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DMN1150UFL3-7 DMN1150UFL3.pdf
DMN1150UFL3-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 12V 2A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1310-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMN2008LFU-7 DMN2008LFU.pdf
DMN2008LFU-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 14.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
auf Bestellung 3590 Stücke:
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11+1.95 EUR
18+1.21 EUR
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DMP6350S-7 DMP6350S.pdf
DMP6350S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 1.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 900mA, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 8435 Stücke:
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100+0.48 EUR
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DMT3006LFG-7 DMT3006LFG.pdf
DMT3006LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 12A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3455 Stücke:
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AnzahlPrivatkunde
9+2.39 EUR
15+1.49 EUR
100+0.99 EUR
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DMT3006LPS-13 DMT3006LPS.pdf
DMT3006LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 16A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 66458 Stücke:
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12+1.8 EUR
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DMT3020LFDB-7 DMT3020LFDB.pdf
DMT3020LFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4136 Stücke:
Lieferzeit 10-14 Tag (e)
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11+2.01 EUR
17+1.26 EUR
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DMT3020LFDF-7 DMT3020LFDF.pdf
DMT3020LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8.4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
auf Bestellung 2469 Stücke:
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13+1.65 EUR
21+1.02 EUR
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DMT4004LPS-13 DMT4004LPS.pdf
DMT4004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 26A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 356008 Stücke:
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9+2.56 EUR
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100+1.2 EUR
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DMT6005LPS-13 DMT6005LPS.pdf
DMT6005LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHA 60V 17.9A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.6W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 161 Stücke:
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7+3.27 EUR
11+2.07 EUR
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DMT6005LSS-13 DMT6005LSS.pdf
DMT6005LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 3813 Stücke:
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100+1.86 EUR
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DMT6009LPS-13 DMT6009LPS.pdf
DMT6009LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CHA 60V 10.6A POWERDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2801 Stücke:
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7+3.2 EUR
11+2.02 EUR
100+1.34 EUR
500+1.06 EUR
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DMT6015LSS-13 DMT6015LSS.pdf
DMT6015LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
auf Bestellung 197513 Stücke:
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DMT6017LSS-13 DMT6017LSS.pdf
DMT6017LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 9.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
auf Bestellung 3010 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.39 EUR
14+1.5 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.7 EUR
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DMTH6009LPS-13 DMTH6009LPS.pdf
DMTH6009LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 320177 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
15+1.48 EUR
100+0.98 EUR
500+0.76 EUR
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DMTH6010LPD-13 DMTH6010LPD.pdf
DMTH6010LPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 13.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8518 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
11+2.05 EUR
100+1.38 EUR
500+1.09 EUR
1000+1 EUR
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SBRT3U60SAF-13 SBRT3U60SAF.pdf
SBRT3U60SAF-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 3A SMAF
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF
Current - Average Rectified (Io): 3A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 109450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
26+0.83 EUR
100+0.56 EUR
500+0.39 EUR
1000+0.26 EUR
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D12V0H1U2LP1610-7 D12V0H1U2LP1610.pdf
D12V0H1U2LP1610-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 350pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.12 EUR
20000+0.12 EUR
30000+0.1 EUR
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D20V0L1B2LP-7B D20V0L1B2LP.pdf
D20V0L1B2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 20VWM 34V X1DFN10062
Power Line Protection: No
Power - Peak Pulse: 68W
Voltage - Clamping (Max) @ Ipp: 34V
Voltage - Breakdown (Min): 21V
Qualification: AEC-Q101
Grade: Automotive
Bidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 20V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 7pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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D24V0L1B2LP-7B D24V0L1B2LP.pdf
D24V0L1B2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.093 EUR
Mindestbestellmenge: 10000 Stücke
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D26V0H1U2LP16-7 D26V0H1U2LP16.pdf
D26V0H1U2LP16-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 26VWM 44VC U-DFN1616-2
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
6000+0.19 EUR
15000+0.18 EUR
30000+0.17 EUR
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D5V0P4UR6SO-7 D5V0P4UR6SO.pdf
D5V0P4UR6SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 6VC SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4.5V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: Yes
Part Status: Active
Produkt ist nicht verfügbar
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D5V0P4URL6SO-7 D5V0P4URL6SO.pdf
D5V0P4URL6SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 6VC SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 2.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4.5V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: Yes
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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D12V0H1U2LP1610-7 D12V0H1U2LP1610.pdf
D12V0H1U2LP1610-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 12VWM 20V UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 350pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
auf Bestellung 50601 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
63+0.33 EUR
165+0.13 EUR
Mindestbestellmenge: 42 Stücke
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D20V0L1B2LP-7B D20V0L1B2LP.pdf
D20V0L1B2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 20VWM 34V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V
Voltage - Clamping (Max) @ Ipp: 34V
Power - Peak Pulse: 68W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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D24V0L1B2LP-7B D24V0L1B2LP.pdf
D24V0L1B2LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 46V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 90W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 23681 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
104+0.2 EUR
172+0.12 EUR
500+0.12 EUR
1000+0.11 EUR
5000+0.11 EUR
Mindestbestellmenge: 50 Stücke
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D26V0H1U2LP16-7 D26V0H1U2LP16.pdf
D26V0H1U2LP16-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 26VWM 44VC U-DFN1616-2
auf Bestellung 36915 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
30+0.7 EUR
100+0.44 EUR
500+0.3 EUR
1000+0.23 EUR
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D5V0P4UR6SO-7 D5V0P4UR6SO.pdf
D5V0P4UR6SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 6VC SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4.5V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 1802 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
34+0.63 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
Mindestbestellmenge: 21 Stücke
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D5V0P4URL6SO-7 D5V0P4URL6SO.pdf
D5V0P4URL6SO-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 6VC SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 2.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOT-26
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4.5V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 2876 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
36+0.58 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.25 EUR
Mindestbestellmenge: 22 Stücke
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GC1200052 GC1200052_B.pdf
GC1200052
Hersteller: Diodes Incorporated
Description: CRYSTAL 12.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.165" (4.20mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 12 MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GC1200056 GC1200056_B.pdf
GC1200056
Hersteller: Diodes Incorporated
Description: CRYSTAL 12.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.165" (4.20mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 12 MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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GC2500081 GC2500081_D.pdf
GC2500081
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 18PF SMD
Packaging: Tape & Reel (TR)
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.165" (4.20mm)
ESR (Equivalent Series Resistance): 20 Ohms
Frequency: 25 MHz
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.65 EUR
2000+0.62 EUR
3000+0.61 EUR
5000+0.58 EUR
7000+0.57 EUR
10000+0.56 EUR
25000+0.54 EUR
Mindestbestellmenge: 1000 Stücke
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GC2500164 GC2500164_A.pdf
GC2500164
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 18PF SMD
Frequency: 25 MHz
ESR (Equivalent Series Resistance): 40 Ohms
Height - Seated (Max): 0.165" (4.20mm)
Operating Mode: Fundamental
Frequency Tolerance: ±20ppm
Frequency Stability: ±10ppm
Operating Temperature: -20°C ~ 70°C
Type: MHz Crystal
Mounting Type: Surface Mount
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Load Capacitance: 18pF
Package / Case: HC-49/US
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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