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AL9910EV4 Diodes Incorporated AL9910EV4-User-Guide-Issue-4.pdf Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Contents: Board(s)
Current - Output / Channel: 180mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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AL9910EV5 Diodes Incorporated AL9910EV5-User-Guide-Issue-3.pdf Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Contents: Board(s)
Current - Output / Channel: 240mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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AL9910EV6 Diodes Incorporated AL9910EV6-User-Guide-Issue-4.pdf Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 75mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Contents: Board(s)
Produkt ist nicht verfügbar
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SBRTF40U100CT SBRTF40U100CT Diodes Incorporated SBRTF40U100CT%28FP%29.pdf Description: DIODE ARR SBR 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SBRTF40U100CTFP SBRTF40U100CTFP Diodes Incorporated SBRTF40U100CT(FP).pdf Description: DIODE RECT SB 100V 20A ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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AH3763Q-P-A AH3763Q-P-A Diodes Incorporated AH3763Q.pdf Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
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AH3765Q-P-A Diodes Incorporated AH3765Q.pdf Description: IC HALL LATCH SWITCH SIP-3
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AH3766Q-P-A Diodes Incorporated AH3766Q.pdf Description: IC HALL LATCH SWITCH SIP-3
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AH3768Q-P-A Diodes Incorporated AH3768Q.pdf Description: IC HALL LATCH SWITCH SIP-3
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AH3769Q-P-A Diodes Incorporated AH3769Q.pdf Description: IC HALL LATCH SWITCH SIP-3
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2N7002H-13 2N7002H-13 Diodes Incorporated 2N7002H.pdf Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
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100000+0.04 EUR
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AP3776MTR-G1 AP3776MTR-G1 Diodes Incorporated AP3776.pdf Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Produkt ist nicht verfügbar
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DMC3028LSDXQ-13 DMC3028LSDXQ-13 Diodes Incorporated DMC3028LSDXQ.pdf Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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DMG1016VQ-13 DMG1016VQ-13 Diodes Incorporated Description: MOSFET N/P-CH 20V 0.87A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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DMN2026UVT-13 DMN2026UVT-13 Diodes Incorporated DMN2026UVT.pdf Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
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DMN3023L-13 DMN3023L-13 Diodes Incorporated DMN3023L.pdf Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
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DMN61D9U-13 DMN61D9U-13 Diodes Incorporated DMN61D9U.pdf Description: MOSFET N-CH 60V 380MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Produkt ist nicht verfügbar
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DMN61D9UW-13 DMN61D9UW-13 Diodes Incorporated Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Produkt ist nicht verfügbar
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DMP2100UFU-13 DMP2100UFU-13 Diodes Incorporated DMP2100UFU.pdf Description: MOSFET 2P-CH 20V 5.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
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DMP6050SFG-13 DMP6050SFG-13 Diodes Incorporated DMP6050SFG.pdf Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
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DMPH6050SK3Q-13 DMPH6050SK3Q-13 Diodes Incorporated DMPH6050SK3Q.pdf Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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DMT6009LFG-13 DMT6009LFG-13 Diodes Incorporated DMT6009LFG.pdf Description: MOSFET N-CH 60V 11A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Produkt ist nicht verfügbar
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DMTH4004SPS-13 DMTH4004SPS-13 Diodes Incorporated DMTH4004SPS.pdf Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
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DMTH6004LPS-13 DMTH6004LPS-13 Diodes Incorporated DMTH6004LPS.pdf Description: MOSFET N-CH 60V 22A PWRDI5060
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SBR12M120P5-13D SBR12M120P5-13D Diodes Incorporated SBR12M120P5.pdf Description: DIODE SBR 120V 12A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Produkt ist nicht verfügbar
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SBR1U150SAQ-13 SBR1U150SAQ-13 Diodes Incorporated SBR1U150SA.pdf Description: DIODE RECT SBR 150V 1A SMA
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ZXMP7A17KQTC ZXMP7A17KQTC Diodes Incorporated ZXMP7A17KQ.pdf Description: MOSFET P-CH 70V 3.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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AH3762Q-W-7 Diodes Incorporated AH3762Q.pdf Description: IC HALL LATCH SWITCH SC59
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AH3765Q-W-7 Diodes Incorporated AH3765Q.pdf Description: IC HALL LATCH SWITCH SC59
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AL5809-25P1-7 AL5809-25P1-7 Diodes Incorporated AL5809.pdf Description: IC LED DRVR LIN PWM 25MA PDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Signage
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Supplier Device Package: PowerDI™ 123
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 60V
Part Status: Active
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6000+0.28 EUR
9000+0.27 EUR
15000+0.25 EUR
21000+0.24 EUR
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AL8400QSE-7 AL8400QSE-7 Diodes Incorporated AL8400.pdf Description: IC LED DRIVER LINEAR SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Voltage - Output: 0.2V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Signage
Internal Switch(s): No
Supplier Device Package: SOT-353
Voltage - Supply (Min): 2.2V
Voltage - Supply (Max): 18V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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AP3783RCK6TR-G1 AP3783RCK6TR-G1 Diodes Incorporated Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.8V ~ 35V
Supplier Device Package: SOT-26
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.5 V
Produkt ist nicht verfügbar
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APD240KDTR-G1 APD240KDTR-G1 Diodes Incorporated APD240.pdf Description: DIODE SCHOTTKY 40V 2A SOD123
Produkt ist nicht verfügbar
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B340Q-13-F B340Q-13-F Diodes Incorporated B320Q-B360Q.pdf Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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BAS70-04Q-7-F BAS70-04Q-7-F Diodes Incorporated BAS70_-04_-05_-06.pdf Description: DIODE ARR SCHOT 70V 70MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS138Q-7-F BSS138Q-7-F Diodes Incorporated BSS138.pdf Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
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DDZ11CQ-7 DDZ11CQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 11.1V 310MW SOD123
Tolerance: ±2.52%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DDZ12CQ-7 Diodes Incorporated ds30407.pdf Description: DIODE ZENER 12.05V 310MW SOD123
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DDZ18CQ-7 DDZ18CQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 17.88V 310MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 17.88 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
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DDZ20CQ-7 DDZ20CQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 19.73V 310MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19.73 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
Qualification: AEC-Q101
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DDZ8V2CQ-7 DDZ8V2CQ-7 Diodes Incorporated DDZ5V1B-DDZ43.pdf Description: DIODE ZENER 8.2V 310MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.5 V
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DMG1016VQ-7 DMG1016VQ-7 Diodes Incorporated DMG1016VQ.pdf Description: MOSFET N/P-CH 20V 0.87A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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DMG7401SFGQ-7 DMG7401SFGQ-7 Diodes Incorporated DMG7401SFGQ.pdf Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
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DMP4025SFGQ-7 DMP4025SFGQ-7 Diodes Incorporated DMP4025SFGQ.pdf Description: MOSFET P-CH 40V 7.2A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Qualification: AEC-Q101
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FMMT558QTA FMMT558QTA Diodes Incorporated FMMT558.pdf Description: TRANS PNP 400V 0.15A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
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MMBF170Q-7-F MMBF170Q-7-F Diodes Incorporated MMBF170Q.pdf Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Qualification: AEC-Q101
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MMBTA06Q-7-F MMBTA06Q-7-F Diodes Incorporated MMBTA05_MMBTA06.pdf Description: TRANS NPN 80V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Qualification: AEC-Q101
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ZXLD1356QDACTC ZXLD1356QDACTC Diodes Incorporated ZXLD1356.pdf Description: IC LED DRVR RGLTR PWM 550MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting, Signage
Current - Output / Channel: 550mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: V-DFN3030-6
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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ZXLD1366QDACTC Diodes Incorporated ZXLD1366.pdf Description: IC LED DRIVER RGLTR PWM 1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: V-DFN3030-6
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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DMT10H010LCT DMT10H010LCT Diodes Incorporated DMT10H010LCT.pdf Description: MOSFET N-CH 100V 98A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
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SBRT30A100CT SBRT30A100CT Diodes Incorporated SBRT30A100CT%28FP%29.pdf Description: DIODE ARRAY SBR 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
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SBRT30A100CTFP SBRT30A100CTFP Diodes Incorporated SBRT30A100CT%28FP%29.pdf Description: DIODE ARR SBR 100V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Produkt ist nicht verfügbar
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SBRT30A45CT SBRT30A45CT Diodes Incorporated SBRT30A45CTFP.pdf Description: DIODE ARRAY SBR 45V 15A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
Current - Reverse Leakage @ Vr: 400 µA @ 45 V
Produkt ist nicht verfügbar
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AS358BGTR-G1 AS358BGTR-G1 Diodes Incorporated AS358,358A,358B.pdf Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 700µA (x2 Channels)
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
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DMTH6004SPS-13 DMTH6004SPS-13 Diodes Incorporated DMTH6004SPS.pdf Description: MOSFET N-CH 60V 25A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
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DMN63D8LW-7 DMN63D8LW-7 Diodes Incorporated DMN63D8LW.pdf Description: MOSFET N-CH 30V 380MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
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DMP2035UFCL-7 DMP2035UFCL-7 Diodes Incorporated DMP2035UFCL.pdf Description: MOSFET P-CH 20V 6.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1616-6 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
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SDM02U30CSP-7 SDM02U30CSP-7 Diodes Incorporated SDM02U30CSP.pdf Description: DIODE SCHOT 30V 200MA X3WLB06032
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 9pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X3-WLB0603-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
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AS358BGTR-G1 AS358BGTR-G1 Diodes Incorporated AS358,358A,358B.pdf Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 700µA (x2 Channels)
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
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DMN63D8LW-13 DMN63D8LW-13 Diodes Incorporated DMN63D8LW.pdf Description: MOSFET N-CH 30V 380MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 143628 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
110+0.16 EUR
215+0.08 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.07 EUR
5000+0.06 EUR
Mindestbestellmenge: 77
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AL9910EV4 AL9910EV4-User-Guide-Issue-4.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Contents: Board(s)
Current - Output / Channel: 180mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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AL9910EV5 AL9910EV5-User-Guide-Issue-3.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Contents: Board(s)
Current - Output / Channel: 240mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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AL9910EV6 AL9910EV6-User-Guide-Issue-4.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 75mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Contents: Board(s)
Produkt ist nicht verfügbar
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SBRTF40U100CT SBRTF40U100CT%28FP%29.pdf
SBRTF40U100CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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SBRTF40U100CTFP SBRTF40U100CT(FP).pdf
SBRTF40U100CTFP
Hersteller: Diodes Incorporated
Description: DIODE RECT SB 100V 20A ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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AH3763Q-P-A AH3763Q.pdf
AH3763Q-P-A
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
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AH3765Q-P-A AH3765Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
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AH3766Q-P-A AH3766Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
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AH3768Q-P-A AH3768Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
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AH3769Q-P-A AH3769Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
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2N7002H-13 2N7002H.pdf
2N7002H-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
auf Bestellung 460000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.06 EUR
20000+0.05 EUR
30000+0.05 EUR
50000+0.05 EUR
70000+0.05 EUR
100000+0.04 EUR
250000+0.04 EUR
Mindestbestellmenge: 10000
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AP3776MTR-G1 AP3776.pdf
AP3776MTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Produkt ist nicht verfügbar
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DMC3028LSDXQ-13 DMC3028LSDXQ.pdf
DMC3028LSDXQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.39 EUR
Mindestbestellmenge: 2500
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DMG1016VQ-13
DMG1016VQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.87A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.23 EUR
30000+0.22 EUR
Mindestbestellmenge: 10000
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DMN2026UVT-13 DMN2026UVT.pdf
DMN2026UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.18 EUR
Mindestbestellmenge: 10000
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DMN3023L-13 DMN3023L.pdf
DMN3023L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.14 EUR
Mindestbestellmenge: 10000
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DMN61D9U-13 DMN61D9U.pdf
DMN61D9U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Produkt ist nicht verfügbar
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DMN61D9UW-13
DMN61D9UW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Produkt ist nicht verfügbar
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DMP2100UFU-13 DMP2100UFU.pdf
DMP2100UFU-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 5.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
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DMP6050SFG-13 DMP6050SFG.pdf
DMP6050SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
15000+0.35 EUR
Mindestbestellmenge: 3000
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DMPH6050SK3Q-13 DMPH6050SK3Q.pdf
DMPH6050SK3Q-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 7.2A/23.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.52 EUR
Mindestbestellmenge: 2500
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DMT6009LFG-13 DMT6009LFG.pdf
DMT6009LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 11A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Produkt ist nicht verfügbar
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DMTH4004SPS-13 DMTH4004SPS.pdf
DMTH4004SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.77 EUR
Mindestbestellmenge: 2500
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DMTH6004LPS-13 DMTH6004LPS.pdf
DMTH6004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR12M120P5-13D SBR12M120P5.pdf
SBR12M120P5-13D
Hersteller: Diodes Incorporated
Description: DIODE SBR 120V 12A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Produkt ist nicht verfügbar
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SBR1U150SAQ-13 SBR1U150SA.pdf
SBR1U150SAQ-13
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 150V 1A SMA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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ZXMP7A17KQTC ZXMP7A17KQ.pdf
ZXMP7A17KQTC
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 70V 3.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.60 EUR
5000+0.55 EUR
7500+0.53 EUR
Mindestbestellmenge: 2500
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AH3762Q-W-7 AH3762Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SC59
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
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AH3765Q-W-7 AH3765Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SC59
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
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AL5809-25P1-7 AL5809.pdf
AL5809-25P1-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 25MA PDI123
Packaging: Tape & Reel (TR)
Package / Case: POWERDI®123
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Signage
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Supplier Device Package: PowerDI™ 123
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.28 EUR
9000+0.27 EUR
15000+0.25 EUR
21000+0.24 EUR
30000+0.23 EUR
Mindestbestellmenge: 3000
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AL8400QSE-7 AL8400.pdf
AL8400QSE-7
Hersteller: Diodes Incorporated
Description: IC LED DRIVER LINEAR SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Voltage - Output: 0.2V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Signage
Internal Switch(s): No
Supplier Device Package: SOT-353
Voltage - Supply (Min): 2.2V
Voltage - Supply (Max): 18V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
Mindestbestellmenge: 3000
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AP3783RCK6TR-G1
AP3783RCK6TR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.8V ~ 35V
Supplier Device Package: SOT-26
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 15.5 V
Produkt ist nicht verfügbar
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APD240KDTR-G1 APD240.pdf
APD240KDTR-G1
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 2A SOD123
Produkt ist nicht verfügbar
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B340Q-13-F B320Q-B360Q.pdf
B340Q-13-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
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BAS70-04Q-7-F BAS70_-04_-05_-06.pdf
BAS70-04Q-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 70V 70MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS138Q-7-F BSS138.pdf
BSS138Q-7-F
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DDZ11CQ-7 DDZ5V1B-DDZ43.pdf
DDZ11CQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 11.1V 310MW SOD123
Tolerance: ±2.52%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8.4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DDZ12CQ-7 ds30407.pdf
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12.05V 310MW SOD123
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
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DDZ18CQ-7 DDZ5V1B-DDZ43.pdf
DDZ18CQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 17.88V 310MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 17.88 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Qualification: AEC-Q101
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.08 EUR
9000+0.06 EUR
30000+0.06 EUR
75000+0.06 EUR
Mindestbestellmenge: 3000
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DDZ20CQ-7 DDZ5V1B-DDZ43.pdf
DDZ20CQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 19.73V 310MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 19.73 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15 V
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.08 EUR
9000+0.06 EUR
30000+0.06 EUR
75000+0.06 EUR
Mindestbestellmenge: 3000
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DDZ8V2CQ-7 DDZ5V1B-DDZ43.pdf
DDZ8V2CQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.2V 310MW SOD123
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.5 V
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
15000+0.07 EUR
30000+0.06 EUR
75000+0.06 EUR
Mindestbestellmenge: 3000
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DMG1016VQ-7 DMG1016VQ.pdf
DMG1016VQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.87A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 171000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
30000+0.22 EUR
Mindestbestellmenge: 3000
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DMG7401SFGQ-7 DMG7401SFGQ.pdf
DMG7401SFGQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Produkt ist nicht verfügbar
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DMP4025SFGQ-7 DMP4025SFGQ.pdf
DMP4025SFGQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 7.2A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2112000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.37 EUR
6000+0.35 EUR
10000+0.33 EUR
50000+0.32 EUR
Mindestbestellmenge: 2000
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FMMT558QTA FMMT558.pdf
FMMT558QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 400V 0.15A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.25 EUR
21000+0.24 EUR
30000+0.23 EUR
Mindestbestellmenge: 3000
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MMBF170Q-7-F MMBF170Q.pdf
MMBF170Q-7-F
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 792000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.08 EUR
9000+0.07 EUR
15000+0.07 EUR
21000+0.06 EUR
Mindestbestellmenge: 3000
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MMBTA06Q-7-F MMBTA05_MMBTA06.pdf
MMBTA06Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Qualification: AEC-Q101
auf Bestellung 132000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.05 EUR
9000+0.04 EUR
15000+0.04 EUR
21000+0.04 EUR
30000+0.04 EUR
75000+0.04 EUR
Mindestbestellmenge: 3000
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ZXLD1356QDACTC ZXLD1356.pdf
ZXLD1356QDACTC
Hersteller: Diodes Incorporated
Description: IC LED DRVR RGLTR PWM 550MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting, Signage
Current - Output / Channel: 550mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: V-DFN3030-6
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ZXLD1366QDACTC ZXLD1366.pdf
Hersteller: Diodes Incorporated
Description: IC LED DRIVER RGLTR PWM 1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Voltage - Output: 60V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: V-DFN3030-6
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 60V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
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DMT10H010LCT DMT10H010LCT.pdf
DMT10H010LCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 98A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 9323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
50+1.74 EUR
100+1.58 EUR
500+1.38 EUR
1000+1.27 EUR
2000+1.25 EUR
Mindestbestellmenge: 5
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SBRT30A100CT SBRT30A100CT%28FP%29.pdf
SBRT30A100CT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Produkt ist nicht verfügbar
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SBRT30A100CTFP SBRT30A100CT%28FP%29.pdf
SBRT30A100CTFP
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 15A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Produkt ist nicht verfügbar
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SBRT30A45CT SBRT30A45CTFP.pdf
SBRT30A45CT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 45V 15A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
Current - Reverse Leakage @ Vr: 400 µA @ 45 V
Produkt ist nicht verfügbar
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AS358BGTR-G1 AS358,358A,358B.pdf
AS358BGTR-G1
Hersteller: Diodes Incorporated
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 700µA (x2 Channels)
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
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DMTH6004SPS-13 DMTH6004SPS.pdf
DMTH6004SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 25A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.27 EUR
5000+1.22 EUR
Mindestbestellmenge: 2500
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DMN63D8LW-7 DMN63D8LW.pdf
DMN63D8LW-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 380MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 1938000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.06 EUR
9000+0.05 EUR
30000+0.05 EUR
75000+0.05 EUR
150000+0.04 EUR
Mindestbestellmenge: 3000
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DMP2035UFCL-7 DMP2035UFCL.pdf
DMP2035UFCL-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 6.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN1616-6 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.35 EUR
9000+0.34 EUR
15000+0.32 EUR
Mindestbestellmenge: 3000
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SDM02U30CSP-7 SDM02U30CSP.pdf
SDM02U30CSP-7
Hersteller: Diodes Incorporated
Description: DIODE SCHOT 30V 200MA X3WLB06032
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 9pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X3-WLB0603-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 9720000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.06 EUR
20000+0.05 EUR
30000+0.05 EUR
50000+0.05 EUR
70000+0.05 EUR
Mindestbestellmenge: 10000
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AS358BGTR-G1 AS358,358A,358B.pdf
AS358BGTR-G1
Hersteller: Diodes Incorporated
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 700µA (x2 Channels)
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Produkt ist nicht verfügbar
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DMN63D8LW-13 DMN63D8LW.pdf
DMN63D8LW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 380MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 143628 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
110+0.16 EUR
215+0.08 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.07 EUR
5000+0.06 EUR
Mindestbestellmenge: 77
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