Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (79040) > Seite 332 nach 1318

Wählen Sie Seite:   [  << Vorherige Seite ]  1 131 262 327 328 329 330 331 332 333 334 335 336 337 393 524 655 786 917 1048 1179 1310 1318  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMT10H015LSS-13 DMT10H015LSS-13 Diodes Incorporated DMT10H015LSS.pdf Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 57500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.71 EUR
5000+0.66 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMT6004LPS-13 DMT6004LPS-13 Diodes Incorporated DMT6004LPS.pdf Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.92 EUR
5000+0.89 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LK3-13 DMTH6010LK3-13 Diodes Incorporated DMTH6010LK3.pdf Description: MOSFET N-CH 60V 14.8A TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LPS-13 DMTH6010LPS-13 Diodes Incorporated DMTH6010LPS.pdf Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-13 SBR5E45P5-13 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7 SBR5E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7D SBR5E45P5-7D Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR8E45P5-7 SBR8E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.32 EUR
3000+0.31 EUR
4500+0.3 EUR
7500+0.29 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
D14V0S1U2WS-7 D14V0S1U2WS-7 Diodes Incorporated D14V0S1U2WS.pdf Description: TVS DIODE 14VWM 26VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 360pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1300W (1.3kW)
Power Line Protection: No
auf Bestellung 48136 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
47+0.38 EUR
100+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
DMC2450UV-7 DMC2450UV-7 Diodes Incorporated DMC2450UV.pdf Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 3635 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
40+0.45 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
DMN63D8L-7 DMN63D8L-7 Diodes Incorporated DMN63D8L.pdf Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 209519 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
89+0.2 EUR
170+0.1 EUR
500+0.076 EUR
1000+0.073 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
DMNH10H028SK3-13 DMNH10H028SK3-13 Diodes Incorporated DMNH10H028SK3.pdf Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.26 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DMNH4006SK3-13 DMNH4006SK3-13 Diodes Incorporated DMNH4006SK3.pdf Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMP10H4D2S-7 DMP10H4D2S-7 Diodes Incorporated DMP10H4D2S.pdf Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
auf Bestellung 70288 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
49+0.36 EUR
107+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
DMP510DL-7 DMP510DL-7 Diodes Incorporated DMP510DL.pdf Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 37118 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
60+0.3 EUR
113+0.16 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H015LFG-7 DMT10H015LFG-7 Diodes Incorporated DMT10H015LFG.pdf Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 18395 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
100+0.95 EUR
500+0.86 EUR
1000+0.79 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H015LPS-13 DMT10H015LPS-13 Diodes Incorporated DMT10H015LPS.pdf Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 108220 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.04 EUR
13+1.44 EUR
100+1.02 EUR
500+0.86 EUR
1000+0.81 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H015LSS-13 DMT10H015LSS-13 Diodes Incorporated DMT10H015LSS.pdf Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 58894 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
11+1.65 EUR
100+1.08 EUR
500+0.87 EUR
1000+0.79 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMT6004LPS-13 DMT6004LPS-13 Diodes Incorporated DMT6004LPS.pdf Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 8927 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.36 EUR
10+1.8 EUR
100+1.27 EUR
500+1.09 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LK3-13 DMTH6010LK3-13 Diodes Incorporated DMTH6010LK3.pdf Description: MOSFET N-CH 60V 14.8A TO252
auf Bestellung 2197 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LPS-13 DMTH6010LPS-13 Diodes Incorporated DMTH6010LPS.pdf Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-13 SBR5E45P5-13 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7 SBR5E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7D SBR5E45P5-7D Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR8E45P5-7 SBR8E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE SBR 45V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 13400 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
25+0.72 EUR
100+0.57 EUR
500+0.43 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LPS-13 DMTH6010LPS-13 Diodes Incorporated DMTH6010LPS.pdf Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-13 SBR5E45P5-13 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7 SBR5E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7D SBR5E45P5-7D Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AL5801EV1 Diodes Incorporated AL5801.pdf Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL5802EV1 AL5802EV1 Diodes Incorporated AL5802.pdf Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8400EV1 Diodes Incorporated AL8400EV1-User-Guide-Issue-1.pdf Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8805EV1 Diodes Incorporated Description: EVAL BOARD FOR AL8805
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 30V
Contents: Board(s)
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8805EV2 Diodes Incorporated Description: EVAL BOARD FOR AL8805
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Contents: Board(s)
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV1 Diodes Incorporated Description: EVAL BOARD FOR AL8806
Features: Dimmable
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV4 Diodes Incorporated Description: EVAL BOARD FOR AL8806
Features: Dimmable
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV6 Diodes Incorporated Description: EVAL BOARD FOR AL8806
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.1A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8807AEV1 Diodes Incorporated Description: EVAL BOARD FOR AL8807A
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8807AEV3 Diodes Incorporated Description: EVAL BOARD FOR AL8807A
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 36V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8808EV1 Diodes Incorporated AL8808EV1.pdf Description: BOARD LED DRIVER 680MA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8808EV2 Diodes Incorporated AL8808.pdf Description: EVAL BOARD FOR AL8808
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8808
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV4 Diodes Incorporated AL9910EV4-User-Guide-Issue-4.pdf Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Contents: Board(s)
Current - Output / Channel: 180mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV5 Diodes Incorporated AL9910EV5-User-Guide-Issue-3.pdf Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Contents: Board(s)
Current - Output / Channel: 240mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV6 Diodes Incorporated AL9910EV6-User-Guide-Issue-4.pdf Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 75mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBRTF40U100CT SBRTF40U100CT Diodes Incorporated SBRTF40U100CT%28FP%29.pdf Description: DIODE ARR SBR 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBRTF40U100CTFP SBRTF40U100CTFP Diodes Incorporated SBRTF40U100CT(FP).pdf Description: DIODE RECT SB 100V 20A ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AH3763Q-P-A AH3763Q-P-A Diodes Incorporated AH3763Q.pdf Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AH3765Q-P-A Diodes Incorporated AH3765Q.pdf Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AH3766Q-P-A Diodes Incorporated AH3766Q.pdf Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AH3768Q-P-A Diodes Incorporated AH3768Q.pdf Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AH3769Q-P-A Diodes Incorporated AH3769Q.pdf Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
2N7002H-13 2N7002H-13 Diodes Incorporated 2N7002H.pdf Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
auf Bestellung 460000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.06 EUR
20000+0.054 EUR
30000+0.051 EUR
50000+0.048 EUR
70000+0.046 EUR
100000+0.044 EUR
250000+0.041 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
AP3776MTR-G1 AP3776MTR-G1 Diodes Incorporated AP3776.pdf Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMC3028LSDXQ-13 DMC3028LSDXQ-13 Diodes Incorporated DMC3028LSDXQ.pdf Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.39 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMG1016VQ-13 DMG1016VQ-13 Diodes Incorporated Description: MOSFET N/P-CH 20V 0.87A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.23 EUR
30000+0.22 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN2026UVT-13 DMN2026UVT-13 Diodes Incorporated DMN2026UVT.pdf Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.18 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN3023L-13 DMN3023L-13 Diodes Incorporated DMN3023L.pdf Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.14 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN61D9U-13 DMN61D9U-13 Diodes Incorporated DMN61D9U.pdf Description: MOSFET N-CH 60V 380MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN61D9UW-13 DMN61D9UW-13 Diodes Incorporated Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2100UFU-13 DMP2100UFU-13 Diodes Incorporated DMP2100UFU.pdf Description: MOSFET 2P-CH 20V 5.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H015LSS-13 DMT10H015LSS.pdf
DMT10H015LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 57500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.71 EUR
5000+0.66 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMT6004LPS-13 DMT6004LPS.pdf
DMT6004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.92 EUR
5000+0.89 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LK3-13 DMTH6010LK3.pdf
DMTH6010LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LPS-13 DMTH6010LPS.pdf
DMTH6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-13 SBR5E45P5.pdf
SBR5E45P5-13
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7 SBR5E45P5.pdf
SBR5E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7D SBR5E45P5.pdf
SBR5E45P5-7D
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR8E45P5-7 SBR5E45P5.pdf
SBR8E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.32 EUR
3000+0.31 EUR
4500+0.3 EUR
7500+0.29 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
D14V0S1U2WS-7 D14V0S1U2WS.pdf
D14V0S1U2WS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 14VWM 26VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 360pF @ 1MHz
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1300W (1.3kW)
Power Line Protection: No
auf Bestellung 48136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
47+0.38 EUR
100+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
DMC2450UV-7 DMC2450UV.pdf
DMC2450UV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 3635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
40+0.45 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
DMN63D8L-7 DMN63D8L.pdf
DMN63D8L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 209519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
89+0.2 EUR
170+0.1 EUR
500+0.076 EUR
1000+0.073 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
DMNH10H028SK3-13 DMNH10H028SK3.pdf
DMNH10H028SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DMNH4006SK3-13 DMNH4006SK3.pdf
DMNH4006SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMP10H4D2S-7 DMP10H4D2S.pdf
DMP10H4D2S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
auf Bestellung 70288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
49+0.36 EUR
107+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
DMP510DL-7 DMP510DL.pdf
DMP510DL-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
auf Bestellung 37118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
60+0.3 EUR
113+0.16 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H015LFG-7 DMT10H015LFG.pdf
DMT10H015LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 18395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
100+0.95 EUR
500+0.86 EUR
1000+0.79 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H015LPS-13 DMT10H015LPS.pdf
DMT10H015LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 108220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
13+1.44 EUR
100+1.02 EUR
500+0.86 EUR
1000+0.81 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DMT10H015LSS-13 DMT10H015LSS.pdf
DMT10H015LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 58894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.62 EUR
11+1.65 EUR
100+1.08 EUR
500+0.87 EUR
1000+0.79 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DMT6004LPS-13 DMT6004LPS.pdf
DMT6004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 8927 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
10+1.8 EUR
100+1.27 EUR
500+1.09 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LK3-13 DMTH6010LK3.pdf
DMTH6010LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A TO252
auf Bestellung 2197 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LPS-13 DMTH6010LPS.pdf
DMTH6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-13 SBR5E45P5.pdf
SBR5E45P5-13
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7 SBR5E45P5.pdf
SBR5E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7D SBR5E45P5.pdf
SBR5E45P5-7D
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR8E45P5-7 SBR5E45P5.pdf
SBR8E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
auf Bestellung 13400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
25+0.72 EUR
100+0.57 EUR
500+0.43 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6010LPS-13 DMTH6010LPS.pdf
DMTH6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-13 SBR5E45P5.pdf
SBR5E45P5-13
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7 SBR5E45P5.pdf
SBR5E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7D SBR5E45P5.pdf
SBR5E45P5-7D
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AL5801EV1 AL5801.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL5802EV1 AL5802.pdf
AL5802EV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8400EV1 AL8400EV1-User-Guide-Issue-1.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8805EV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8805
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 30V
Contents: Board(s)
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8805EV2
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8805
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Contents: Board(s)
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Features: Dimmable
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV4
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Features: Dimmable
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.5A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8806EV6
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8806
Packaging: Box
Voltage - Input: 9V ~ 30V
Current - Output / Channel: 1.1A
Utilized IC / Part: AL8806
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8807AEV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8807A
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 36V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8807AEV3
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8807A
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 36V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: AL8807A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8808EV1 AL8808EV1.pdf
Hersteller: Diodes Incorporated
Description: BOARD LED DRIVER 680MA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8808EV2 AL8808.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8808
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Current - Output / Channel: 680mA
Utilized IC / Part: AL8808
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV4 AL9910EV4-User-Guide-Issue-4.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Contents: Board(s)
Current - Output / Channel: 180mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV5 AL9910EV5-User-Guide-Issue-3.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 85 ~ 277 VAC
Contents: Board(s)
Current - Output / Channel: 240mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL9910EV6 AL9910EV6-User-Guide-Issue-4.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL9910A
Packaging: Box
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 75mA
Utilized IC / Part: AL9910A
Supplied Contents: Board(s)
Outputs and Type: 4 Non-Isolated Outputs
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBRTF40U100CT SBRTF40U100CT%28FP%29.pdf
SBRTF40U100CT
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBRTF40U100CTFP SBRTF40U100CT(FP).pdf
SBRTF40U100CTFP
Hersteller: Diodes Incorporated
Description: DIODE RECT SB 100V 20A ITO-220A
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AH3763Q-P-A AH3763Q.pdf
AH3763Q-P-A
Hersteller: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AH3765Q-P-A AH3765Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AH3766Q-P-A AH3766Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AH3768Q-P-A AH3768Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AH3769Q-P-A AH3769Q.pdf
Hersteller: Diodes Incorporated
Description: IC HALL LATCH SWITCH SIP-3
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
2N7002H-13 2N7002H.pdf
2N7002H-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 170MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 25 V
auf Bestellung 460000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.06 EUR
20000+0.054 EUR
30000+0.051 EUR
50000+0.048 EUR
70000+0.046 EUR
100000+0.044 EUR
250000+0.041 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
AP3776MTR-G1 AP3776.pdf
AP3776MTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH FLYBACK 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.1V ~ 28V
Supplier Device Package: 8-SO
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMC3028LSDXQ-13 DMC3028LSDXQ.pdf
DMC3028LSDXQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.39 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMG1016VQ-13
DMG1016VQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.87A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.23 EUR
30000+0.22 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN2026UVT-13 DMN2026UVT.pdf
DMN2026UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.15W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.18 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN3023L-13 DMN3023L.pdf
DMN3023L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.14 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
DMN61D9U-13 DMN61D9U.pdf
DMN61D9U-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN61D9UW-13
DMN61D9UW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP2100UFU-13 DMP2100UFU.pdf
DMP2100UFU-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 5.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 131 262 327 328 329 330 331 332 333 334 335 336 337 393 524 655 786 917 1048 1179 1310 1318  [ Nächste Seite >> ]