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BZT585B5V1TQ-7 BZT585B5V1TQ-7 Diodes Incorporated BZT585B5V1TQ-BZT585B43TQ.pdf Description: DIODE ZENER 5.1V 350MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 477000 Stücke:
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3000+0.05 EUR
6000+0.05 EUR
9000+0.05 EUR
15000+0.05 EUR
21000+0.05 EUR
30000+0.04 EUR
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BZT585B5V1TQ-7 BZT585B5V1TQ-7 Diodes Incorporated BZT585B5V1TQ-BZT585B43TQ.pdf Description: DIODE ZENER 5.1V 350MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
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100+0.18 EUR
205+0.09 EUR
500+0.08 EUR
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AL1696-30AS7-13 AL1696-30AS7-13 Diodes Incorporated AL1696.pdf Description: IC LED DRIVER OFFL TRIAC 3A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 3A
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
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AL1696-20BS7-13 AL1696-20BS7-13 Diodes Incorporated AL1696.pdf Description: LED OFFLINE DRIVER,SO-7
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AL1696-20CS7-13 AL1696-20CS7-13 Diodes Incorporated AL1696.pdf Description: LED OFFLINE DRIVER,SO-7
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AL1696-20BS7-13 AL1696-20BS7-13 Diodes Incorporated AL1696.pdf Description: LED OFFLINE DRIVER,SO-7
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AL1696-20CS7-13 AL1696-20CS7-13 Diodes Incorporated AL1696.pdf Description: LED OFFLINE DRIVER,SO-7
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MMSZ5231B-13-F MMSZ5231B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 5.1V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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MMSZ5234B-13-F MMSZ5234B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 6.2V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Produkt ist nicht verfügbar
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MMSZ5238B-13-F MMSZ5238B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 8.7V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 105°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
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MMSZ5242B-13-F MMSZ5242B-13-F Diodes Incorporated ds18010.pdf Description: DIODE ZENER 12V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
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AP9214LA-AH-HSB-7 AP9214LA-AH-HSB-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
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AP9214LA-AH-HSBR-7 AP9214LA-AH-HSBR-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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AP9214L-AH-HSB-7 AP9214L-AH-HSB-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
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AP9214LA-AH-HSB-7 AP9214LA-AH-HSB-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
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AP9214LA-AH-HSBR-7 AP9214LA-AH-HSBR-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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AP9214L-AH-HSB-7 AP9214L-AH-HSB-7 Diodes Incorporated AP9214L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
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13+1.43 EUR
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100+1.11 EUR
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500+0.92 EUR
1000+0.73 EUR
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AP4341SNTR-G1 AP4341SNTR-G1 Diodes Incorporated AP4341S.pdf Description: ACDC PSR ACCEL SOT23
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AP4341SNTR-G1 AP4341SNTR-G1 Diodes Incorporated AP4341S.pdf Description: ACDC PSR ACCEL SOT23
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AP4341SNTR-G1 AP4341SNTR-G1 Diodes Incorporated AP4341S.pdf Description: ACDC PSR ACCEL SOT23
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1N5819HW1-7-F 1N5819HW1-7-F Diodes Incorporated 1N5819HW1.pdf Description: DIODE SBR 40V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Super Barrier
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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50+0.36 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.20 EUR
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BCM857BS-7-F BCM857BS-7-F Diodes Incorporated BCM857BS.pdf Description: TRANS 2PNP 45V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
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DMN2010UDZ-7 DMN2010UDZ-7 Diodes Incorporated DMN2010UDZ.pdf Description: MOSFET 2N-CH 20V 11A U-DFN2535-6
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DMP6050SFG-13 DMP6050SFG-13 Diodes Incorporated DMP6050SFG.pdf Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
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100+0.67 EUR
500+0.53 EUR
1000+0.48 EUR
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DMT6009LK3-13 DMT6009LK3-13 Diodes Incorporated DMT6009LK3.pdf Description: MOSFET N-CH 60V 13.3A/57A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
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500+0.78 EUR
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DMT6015LPS-13 DMT6015LPS-13 Diodes Incorporated DMT6015LPS.pdf Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.16W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
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500+0.63 EUR
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DMTH4004SPS-13 DMTH4004SPS-13 Diodes Incorporated DMTH4004SPS.pdf Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
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12+1.59 EUR
100+1.12 EUR
500+0.91 EUR
1000+0.84 EUR
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DMTH4007LK3-13 DMTH4007LK3-13 Diodes Incorporated DMTH4007LK3.pdf Description: MOSFET N-CH 40V 16.8A/70A TO252
Produkt ist nicht verfügbar
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DMTH4007LPS-13 DMTH4007LPS-13 Diodes Incorporated DMTH4007LPS.pdf Description: MOSFET N-CH 40V 15.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
auf Bestellung 2500 Stücke:
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13+1.46 EUR
15+1.19 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.66 EUR
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DMTH4007SPS-13 DMTH4007SPS-13 Diodes Incorporated DMTH4007SPS.pdf Description: MOSFET BVDSS: 31V 40V POWERDI506
Produkt ist nicht verfügbar
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DMG4N60SK3-13 DMG4N60SK3-13 Diodes Incorporated DMG4N60SK3.pdf Description: MOSFET N-CH 600V 3.7A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 48W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V
Produkt ist nicht verfügbar
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DMN1250UFEL-7 DMN1250UFEL-7 Diodes Incorporated DMN1250UFEL.pdf Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
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3000+0.59 EUR
6000+0.55 EUR
9000+0.53 EUR
Mindestbestellmenge: 3000
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DMT3004LPS-13 DMT3004LPS-13 Diodes Incorporated DMT3004LPS.pdf Description: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
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2500+0.59 EUR
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DMT6007LFG-7 DMT6007LFG-7 Diodes Incorporated DMT6007LFG.pdf Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
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2000+0.73 EUR
4000+0.67 EUR
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DMT6009LSS-13 DMT6009LSS-13 Diodes Incorporated DMT6009LSS.pdf Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 12500 Stücke:
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7500+0.56 EUR
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DMT6010LSS-13 DMT6010LSS-13 Diodes Incorporated DMT6010LSS.pdf Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
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2500+0.79 EUR
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DMT69M8LSS-13 DMT69M8LSS-13 Diodes Incorporated DMT69M8LSS.pdf Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
Produkt ist nicht verfügbar
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DMTH3004LK3-13 DMTH3004LK3-13 Diodes Incorporated DMTH3004LK3.pdf Description: MOSFET N-CH 30V 21A/75A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Produkt ist nicht verfügbar
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DMTH4004SCTB-13 DMTH4004SCTB-13 Diodes Incorporated DMTH4004SCTB.pdf Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
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DMTH4004SK3-13 DMTH4004SK3-13 Diodes Incorporated DMTH4004SK3.pdf Description: MOSFET N-CH 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
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DMTH4007SPD-13 DMTH4007SPD-13 Diodes Incorporated DMTH4007SPD.pdf Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
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DMTH6005LPS-13 DMTH6005LPS-13 Diodes Incorporated DMTH6005LPS.pdf Description: MOSFET N-CH 60V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
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PDR5KF-13 PDR5KF-13 Diodes Incorporated PDR5KF.pdf Description: DIODE FAST 800V 5A POWERDI5
Produkt ist nicht verfügbar
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SBR10B45P5-13 SBR10B45P5-13 Diodes Incorporated SBR10B45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
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SBR10B45P5-7 SBR10B45P5-7 Diodes Incorporated SBR10B45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
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3000+0.26 EUR
7500+0.25 EUR
10500+0.23 EUR
37500+0.22 EUR
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SBR30E45CTB SBR30E45CTB Diodes Incorporated SBR30E45CTB.pdf Description: DIODE ARRAY SBR 45V 15A TO263AB
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DMG4N60SK3-13 DMG4N60SK3-13 Diodes Incorporated DMG4N60SK3.pdf Description: MOSFET N-CH 600V 3.7A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 48W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V
Produkt ist nicht verfügbar
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DMN1250UFEL-7 DMN1250UFEL-7 Diodes Incorporated DMN1250UFEL.pdf Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
auf Bestellung 45000 Stücke:
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8+2.27 EUR
13+1.43 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.67 EUR
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DMT3004LPS-13 DMT3004LPS-13 Diodes Incorporated DMT3004LPS.pdf Description: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
auf Bestellung 2500 Stücke:
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8+2.22 EUR
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100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
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DMT6007LFG-7 DMT6007LFG-7 Diodes Incorporated DMT6007LFG.pdf Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 15404 Stücke:
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500+0.89 EUR
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DMT6009LSS-13 DMT6009LSS-13 Diodes Incorporated DMT6009LSS.pdf Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 14516 Stücke:
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500+0.73 EUR
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DMT6010LSS-13 DMT6010LSS-13 Diodes Incorporated DMT6010LSS.pdf Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 6992 Stücke:
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500+0.94 EUR
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DMT69M8LSS-13 DMT69M8LSS-13 Diodes Incorporated DMT69M8LSS.pdf Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
auf Bestellung 2490 Stücke:
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DMTH4004SCTB-13 DMTH4004SCTB-13 Diodes Incorporated DMTH4004SCTB.pdf Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 6385 Stücke:
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6+2.94 EUR
10+2.13 EUR
100+1.46 EUR
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DMTH4004SK3-13 DMTH4004SK3-13 Diodes Incorporated DMTH4004SK3.pdf Description: MOSFET N-CH 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7500 Stücke:
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7+2.55 EUR
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DMTH4007SPD-13 DMTH4007SPD-13 Diodes Incorporated DMTH4007SPD.pdf Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
auf Bestellung 24268 Stücke:
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6+2.97 EUR
10+1.88 EUR
100+1.23 EUR
500+0.98 EUR
1000+0.90 EUR
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DMTH6005LPS-13 DMTH6005LPS-13 Diodes Incorporated DMTH6005LPS.pdf Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 4896 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
10+1.81 EUR
100+1.27 EUR
500+1.08 EUR
1000+0.99 EUR
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PDR5KF-13 PDR5KF-13 Diodes Incorporated PDR5KF.pdf Description: DIODE FAST 800V 5A POWERDI5
Produkt ist nicht verfügbar
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SBR10B45P5-13 SBR10B45P5-13 Diodes Incorporated SBR10B45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 85110 Stücke:
Lieferzeit 10-14 Tag (e)
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30+0.59 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.29 EUR
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SBR10B45P5-7 SBR10B45P5-7 Diodes Incorporated SBR10B45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 94806 Stücke:
Lieferzeit 10-14 Tag (e)
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27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
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BZT585B5V1TQ-7 BZT585B5V1TQ-BZT585B43TQ.pdf
BZT585B5V1TQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 350MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 477000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.05 EUR
9000+0.05 EUR
15000+0.05 EUR
21000+0.05 EUR
30000+0.04 EUR
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BZT585B5V1TQ-7 BZT585B5V1TQ-BZT585B43TQ.pdf
BZT585B5V1TQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 350MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 479202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
100+0.18 EUR
205+0.09 EUR
500+0.08 EUR
1000+0.08 EUR
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AL1696-30AS7-13 AL1696.pdf
AL1696-30AS7-13
Hersteller: Diodes Incorporated
Description: IC LED DRIVER OFFL TRIAC 3A 7SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 3A
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 7-SO
Dimming: Triac
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
auf Bestellung 2076 Stücke:
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Anzahl Preis
18+0.99 EUR
21+0.85 EUR
25+0.79 EUR
100+0.64 EUR
250+0.59 EUR
500+0.50 EUR
1000+0.39 EUR
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AL1696-20BS7-13 AL1696.pdf
AL1696-20BS7-13
Hersteller: Diodes Incorporated
Description: LED OFFLINE DRIVER,SO-7
auf Bestellung 3570472000 Stücke:
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AL1696-20CS7-13 AL1696.pdf
AL1696-20CS7-13
Hersteller: Diodes Incorporated
Description: LED OFFLINE DRIVER,SO-7
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AL1696-20BS7-13 AL1696.pdf
AL1696-20BS7-13
Hersteller: Diodes Incorporated
Description: LED OFFLINE DRIVER,SO-7
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AL1696-20CS7-13 AL1696.pdf
AL1696-20CS7-13
Hersteller: Diodes Incorporated
Description: LED OFFLINE DRIVER,SO-7
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MMSZ5231B-13-F ds18010.pdf
MMSZ5231B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.05 EUR
20000+0.04 EUR
30000+0.04 EUR
Mindestbestellmenge: 10000
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MMSZ5234B-13-F ds18010.pdf
MMSZ5234B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 6.2V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Produkt ist nicht verfügbar
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MMSZ5238B-13-F ds18010.pdf
MMSZ5238B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 8.7V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 105°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Produkt ist nicht verfügbar
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MMSZ5242B-13-F ds18010.pdf
MMSZ5242B-13-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 370MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
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AP9214LA-AH-HSB-7 AP9214L.pdf
AP9214LA-AH-HSB-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.63 EUR
6000+0.60 EUR
Mindestbestellmenge: 3000
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AP9214LA-AH-HSBR-7 AP9214L.pdf
AP9214LA-AH-HSBR-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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AP9214L-AH-HSB-7 AP9214L.pdf
AP9214L-AH-HSB-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.68 EUR
Mindestbestellmenge: 3000
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AP9214LA-AH-HSB-7 AP9214L.pdf
AP9214LA-AH-HSB-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
auf Bestellung 9698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.50 EUR
14+1.33 EUR
25+1.26 EUR
100+1.04 EUR
250+0.97 EUR
500+0.86 EUR
1000+0.68 EUR
Mindestbestellmenge: 12
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AP9214LA-AH-HSBR-7 AP9214L.pdf
AP9214LA-AH-HSBR-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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AP9214L-AH-HSB-7 AP9214L.pdf
AP9214L-AH-HSB-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: U-DFN2535-6
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
auf Bestellung 5053 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.60 EUR
13+1.43 EUR
25+1.36 EUR
100+1.11 EUR
250+1.04 EUR
500+0.92 EUR
1000+0.73 EUR
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AP4341SNTR-G1 AP4341S.pdf
AP4341SNTR-G1
Hersteller: Diodes Incorporated
Description: ACDC PSR ACCEL SOT23
Produkt ist nicht verfügbar
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AP4341SNTR-G1 AP4341S.pdf
AP4341SNTR-G1
Hersteller: Diodes Incorporated
Description: ACDC PSR ACCEL SOT23
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AP4341SNTR-G1 AP4341S.pdf
AP4341SNTR-G1
Hersteller: Diodes Incorporated
Description: ACDC PSR ACCEL SOT23
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1N5819HW1-7-F 1N5819HW1.pdf
1N5819HW1-7-F
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Super Barrier
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 25938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
50+0.36 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.20 EUR
Mindestbestellmenge: 33
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BCM857BS-7-F BCM857BS.pdf
BCM857BS-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 45V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 822377 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
122+0.14 EUR
500+0.11 EUR
1000+0.10 EUR
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DMN2010UDZ-7 DMN2010UDZ.pdf
DMN2010UDZ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 11A U-DFN2535-6
auf Bestellung 10644 Stücke:
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DMP6050SFG-13 DMP6050SFG.pdf
DMP6050SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
auf Bestellung 36713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
18+0.99 EUR
100+0.67 EUR
500+0.53 EUR
1000+0.48 EUR
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DMT6009LK3-13 DMT6009LK3.pdf
DMT6009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.3A/57A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 57327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
13+1.46 EUR
100+0.97 EUR
500+0.78 EUR
1000+0.72 EUR
Mindestbestellmenge: 8
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DMT6015LPS-13 DMT6015LPS.pdf
DMT6015LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.16W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
auf Bestellung 7488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
17+1.09 EUR
100+0.75 EUR
500+0.63 EUR
1000+0.57 EUR
Mindestbestellmenge: 13
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DMTH4004SPS-13 DMTH4004SPS.pdf
DMTH4004SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
12+1.59 EUR
100+1.12 EUR
500+0.91 EUR
1000+0.84 EUR
Mindestbestellmenge: 8
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DMTH4007LK3-13 DMTH4007LK3.pdf
DMTH4007LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 16.8A/70A TO252
Produkt ist nicht verfügbar
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DMTH4007LPS-13 DMTH4007LPS.pdf
DMTH4007LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 15.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
15+1.19 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.66 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DMTH4007SPS-13 DMTH4007SPS.pdf
DMTH4007SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V 40V POWERDI506
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMG4N60SK3-13 DMG4N60SK3.pdf
DMG4N60SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 600V 3.7A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 48W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V
Produkt ist nicht verfügbar
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DMN1250UFEL-7 DMN1250UFEL.pdf
DMN1250UFEL-7
Hersteller: Diodes Incorporated
Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.59 EUR
6000+0.55 EUR
9000+0.53 EUR
Mindestbestellmenge: 3000
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DMT3004LPS-13 DMT3004LPS.pdf
DMT3004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.59 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFG-7 DMT6007LFG.pdf
DMT6007LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.73 EUR
4000+0.67 EUR
6000+0.66 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
DMT6009LSS-13 DMT6009LSS.pdf
DMT6009LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.58 EUR
5000+0.57 EUR
7500+0.56 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
DMT6010LSS-13 DMT6010LSS.pdf
DMT6010LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.79 EUR
5000+0.76 EUR
Mindestbestellmenge: 2500
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DMT69M8LSS-13 DMT69M8LSS.pdf
DMT69M8LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
Produkt ist nicht verfügbar
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DMTH3004LK3-13 DMTH3004LK3.pdf
DMTH3004LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 21A/75A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Produkt ist nicht verfügbar
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DMTH4004SCTB-13 DMTH4004SCTB.pdf
DMTH4004SCTB-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.96 EUR
Mindestbestellmenge: 800
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DMTH4004SK3-13 DMTH4004SK3.pdf
DMTH4004SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.12 EUR
5000+1.07 EUR
Mindestbestellmenge: 2500
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DMTH4007SPD-13 DMTH4007SPD.pdf
DMTH4007SPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.79 EUR
Mindestbestellmenge: 2500
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DMTH6005LPS-13 DMTH6005LPS.pdf
DMTH6005LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.90 EUR
Mindestbestellmenge: 2500
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PDR5KF-13 PDR5KF.pdf
PDR5KF-13
Hersteller: Diodes Incorporated
Description: DIODE FAST 800V 5A POWERDI5
Produkt ist nicht verfügbar
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SBR10B45P5-13 SBR10B45P5.pdf
SBR10B45P5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.23 EUR
15000+0.22 EUR
Mindestbestellmenge: 5000
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SBR10B45P5-7 SBR10B45P5.pdf
SBR10B45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 94500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.29 EUR
3000+0.26 EUR
7500+0.25 EUR
10500+0.23 EUR
37500+0.22 EUR
Mindestbestellmenge: 1500
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SBR30E45CTB SBR30E45CTB.pdf
SBR30E45CTB
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 45V 15A TO263AB
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
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DMG4N60SK3-13 DMG4N60SK3.pdf
DMG4N60SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 600V 3.7A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 48W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN1250UFEL-7 DMN1250UFEL.pdf
DMN1250UFEL-7
Hersteller: Diodes Incorporated
Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
13+1.43 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DMT3004LPS-13 DMT3004LPS.pdf
DMT3004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
13+1.40 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DMT6007LFG-7 DMT6007LFG.pdf
DMT6007LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 15404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
12+1.49 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
DMT6009LSS-13 DMT6009LSS.pdf
DMT6009LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 14516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
15+1.21 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.69 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DMT6010LSS-13 DMT6010LSS.pdf
DMT6010LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 6992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
12+1.59 EUR
100+1.12 EUR
500+0.94 EUR
1000+0.93 EUR
Mindestbestellmenge: 9
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DMT69M8LSS-13 DMT69M8LSS.pdf
DMT69M8LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
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DMTH4004SCTB-13 DMTH4004SCTB.pdf
DMTH4004SCTB-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 6385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+2.13 EUR
100+1.46 EUR
Mindestbestellmenge: 6
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DMTH4004SK3-13 DMTH4004SK3.pdf
DMTH4004SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
Mindestbestellmenge: 7
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DMTH4007SPD-13 DMTH4007SPD.pdf
DMTH4007SPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
auf Bestellung 24268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+1.88 EUR
100+1.23 EUR
500+0.98 EUR
1000+0.90 EUR
Mindestbestellmenge: 6
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DMTH6005LPS-13 DMTH6005LPS.pdf
DMTH6005LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 4896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
10+1.81 EUR
100+1.27 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 8
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PDR5KF-13 PDR5KF.pdf
PDR5KF-13
Hersteller: Diodes Incorporated
Description: DIODE FAST 800V 5A POWERDI5
Produkt ist nicht verfügbar
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SBR10B45P5-13 SBR10B45P5.pdf
SBR10B45P5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 85110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
30+0.59 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
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SBR10B45P5-7 SBR10B45P5.pdf
SBR10B45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 94806 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
Mindestbestellmenge: 23
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