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AP4341SNTR-G1 AP4341SNTR-G1 Diodes Incorporated AP4341S.pdf Description: ACDC PSR ACCEL SOT23
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1N5819HW1-7-F 1N5819HW1-7-F Diodes Incorporated 1N5819HW1.pdf Description: DIODE SBR 40V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Super Barrier
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
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BCM857BS-7-F BCM857BS-7-F Diodes Incorporated BCM857BS.pdf Description: TRANS 2PNP 45V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
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122+0.14 EUR
500+0.11 EUR
1000+0.098 EUR
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DMN2010UDZ-7 DMN2010UDZ-7 Diodes Incorporated DMN2010UDZ.pdf Description: MOSFET 2N-CH 20V 11A U-DFN2535-6
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DMP6050SFG-13 DMP6050SFG-13 Diodes Incorporated DMP6050SFG.pdf Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
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500+0.53 EUR
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DMT6009LK3-13 DMT6009LK3-13 Diodes Incorporated DMT6009LK3.pdf Description: MOSFET N-CH 60V 13.3A/57A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
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500+0.78 EUR
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DMT6015LPS-13 DMT6015LPS-13 Diodes Incorporated DMT6015LPS.pdf Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.16W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
auf Bestellung 7488 Stücke:
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500+0.63 EUR
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DMTH4004SPS-13 DMTH4004SPS-13 Diodes Incorporated DMTH4004SPS.pdf Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7463 Stücke:
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100+1.12 EUR
500+0.91 EUR
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DMTH4007LK3-13 DMTH4007LK3-13 Diodes Incorporated DMTH4007LK3.pdf Description: MOSFET N-CH 40V 16.8A/70A TO252
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DMTH4007LPS-13 DMTH4007LPS-13 Diodes Incorporated DMTH4007LPS.pdf Description: MOSFET N-CH 40V 15.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
auf Bestellung 2500 Stücke:
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13+1.46 EUR
15+1.19 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.66 EUR
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DMTH4007SPS-13 DMTH4007SPS-13 Diodes Incorporated DMTH4007SPS.pdf Description: MOSFET BVDSS: 31V 40V POWERDI506
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DMG4N60SK3-13 DMG4N60SK3-13 Diodes Incorporated DMG4N60SK3.pdf Description: MOSFET N-CH 600V 3.7A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 48W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V
Produkt ist nicht verfügbar
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DMN1250UFEL-7 DMN1250UFEL-7 Diodes Incorporated DMN1250UFEL.pdf Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
auf Bestellung 45000 Stücke:
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3000+0.59 EUR
6000+0.55 EUR
9000+0.53 EUR
Mindestbestellmenge: 3000
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DMT3004LPS-13 DMT3004LPS-13 Diodes Incorporated DMT3004LPS.pdf Description: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
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2500+0.59 EUR
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DMT6007LFG-7 DMT6007LFG-7 Diodes Incorporated DMT6007LFG.pdf Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 12000 Stücke:
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2000+0.73 EUR
4000+0.67 EUR
6000+0.66 EUR
Mindestbestellmenge: 2000
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DMT6009LSS-13 DMT6009LSS-13 Diodes Incorporated DMT6009LSS.pdf Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 12500 Stücke:
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2500+0.58 EUR
5000+0.57 EUR
7500+0.56 EUR
Mindestbestellmenge: 2500
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DMT6010LSS-13 DMT6010LSS-13 Diodes Incorporated DMT6010LSS.pdf Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
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2500+0.79 EUR
5000+0.76 EUR
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DMT69M8LSS-13 DMT69M8LSS-13 Diodes Incorporated DMT69M8LSS.pdf Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
Produkt ist nicht verfügbar
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DMTH3004LK3-13 DMTH3004LK3-13 Diodes Incorporated DMTH3004LK3.pdf Description: MOSFET N-CH 30V 21A/75A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Produkt ist nicht verfügbar
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DMTH4004SCTB-13 DMTH4004SCTB-13 Diodes Incorporated DMTH4004SCTB.pdf Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 5600 Stücke:
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800+0.96 EUR
Mindestbestellmenge: 800
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DMTH4004SK3-13 DMTH4004SK3-13 Diodes Incorporated DMTH4004SK3.pdf Description: MOSFET N-CH 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7500 Stücke:
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2500+1.12 EUR
5000+1.07 EUR
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DMTH4007SPD-13 DMTH4007SPD-13 Diodes Incorporated DMTH4007SPD.pdf Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
auf Bestellung 22500 Stücke:
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2500+0.79 EUR
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DMTH6005LPS-13 DMTH6005LPS-13 Diodes Incorporated DMTH6005LPS.pdf Description: MOSFET N-CH 60V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 2500 Stücke:
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2500+0.9 EUR
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PDR5KF-13 PDR5KF-13 Diodes Incorporated PDR5KF.pdf Description: DIODE FAST 800V 5A POWERDI5
Produkt ist nicht verfügbar
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SBR10B45P5-13 SBR10B45P5-13 Diodes Incorporated SBR10B45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 80000 Stücke:
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5000+0.23 EUR
15000+0.22 EUR
Mindestbestellmenge: 5000
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SBR10B45P5-7 SBR10B45P5-7 Diodes Incorporated SBR10B45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
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10500+0.23 EUR
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SBR30E45CTB SBR30E45CTB Diodes Incorporated SBR30E45CTB.pdf Description: DIODE ARRAY SBR 45V 15A TO263AB
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DMG4N60SK3-13 DMG4N60SK3-13 Diodes Incorporated DMG4N60SK3.pdf Description: MOSFET N-CH 600V 3.7A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 48W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V
Produkt ist nicht verfügbar
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DMN1250UFEL-7 DMN1250UFEL-7 Diodes Incorporated DMN1250UFEL.pdf Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
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DMT3004LPS-13 DMT3004LPS-13 Diodes Incorporated DMT3004LPS.pdf Description: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
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DMT6007LFG-7 DMT6007LFG-7 Diodes Incorporated DMT6007LFG.pdf Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
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DMT6009LSS-13 DMT6009LSS-13 Diodes Incorporated DMT6009LSS.pdf Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
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DMT6010LSS-13 DMT6010LSS-13 Diodes Incorporated DMT6010LSS.pdf Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
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DMT69M8LSS-13 DMT69M8LSS-13 Diodes Incorporated DMT69M8LSS.pdf Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
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DMTH4004SCTB-13 DMTH4004SCTB-13 Diodes Incorporated DMTH4004SCTB.pdf Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
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DMTH4004SK3-13 DMTH4004SK3-13 Diodes Incorporated DMTH4004SK3.pdf Description: MOSFET N-CH 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
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DMTH4007SPD-13 DMTH4007SPD-13 Diodes Incorporated DMTH4007SPD.pdf Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
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DMTH6005LPS-13 DMTH6005LPS-13 Diodes Incorporated DMTH6005LPS.pdf Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 4896 Stücke:
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PDR5KF-13 PDR5KF-13 Diodes Incorporated PDR5KF.pdf Description: DIODE FAST 800V 5A POWERDI5
Produkt ist nicht verfügbar
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SBR10B45P5-13 SBR10B45P5-13 Diodes Incorporated SBR10B45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 85110 Stücke:
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SBR10B45P5-7 SBR10B45P5-7 Diodes Incorporated SBR10B45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 94806 Stücke:
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DMT69M8LSS-13 DMT69M8LSS-13 Diodes Incorporated DMT69M8LSS.pdf Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
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PDR5KF-13 PDR5KF-13 Diodes Incorporated PDR5KF.pdf Description: DIODE FAST 800V 5A POWERDI5
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DMT6007LFG-13 DMT6007LFG-13 Diodes Incorporated DMT6007LFG.pdf Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Produkt ist nicht verfügbar
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SBR10B45P5-7D SBR10B45P5-7D Diodes Incorporated SBR10B45P5.pdf Description: DIODE SBR 45V 10A POWERDI5
Produkt ist nicht verfügbar
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SBR30E45CTB-13 SBR30E45CTB-13 Diodes Incorporated SBR30E45CTB.pdf Description: DIODE SBR 45V 10A TO263AB
Produkt ist nicht verfügbar
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AP65352SP-13 AP65352SP-13 Diodes Incorporated Description: IC REG BUCK ADJUSTABLE 3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 650kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.765V
Produkt ist nicht verfügbar
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AP65454SP-13 AP65454SP-13 Diodes Incorporated AP65454.pdf Description: IC REG BUCK ADJ 4A SO-8EP
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AP65454SP-13 AP65454SP-13 Diodes Incorporated AP65454.pdf Description: IC REG BUCK ADJ 4A SO-8EP
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PI7C9X2G404SLBFDE PI7C9X2G404SLBFDE Diodes Incorporated PI7C9X2G404SL_Sept2017_DS.pdf Description: IC INTERFACE SPECIALIZED 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 128-LQFP (14x14)
Part Status: Active
auf Bestellung 455 Stücke:
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BAV116S92-7 BAV116S92-7 Diodes Incorporated BAV116S92_Rev4-3_Nov2021.pdf Description: DIODE STANDARD 85V 215MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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BAV116S92-7 BAV116S92-7 Diodes Incorporated BAV116S92_Rev4-3_Nov2021.pdf Description: DIODE STANDARD 85V 215MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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DMC3028LSDXQ-13 DMC3028LSDXQ-13 Diodes Incorporated DMC3028LSDXQ.pdf Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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AP7343D-12FS4-7B AP7343D-12FS4-7B Diodes Incorporated AP7343.pdf Description: IC REG LINEAR 1.2V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.58V @ 300mA
Protection Features: Over Current
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23+0.78 EUR
28+0.65 EUR
100+0.49 EUR
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AP7343D-27FS4-7B AP7343D-27FS4-7B Diodes Incorporated AP7343.pdf Description: IC REG LINEAR 2.7V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
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AP7343D-28FS4-7B AP7343D-28FS4-7B Diodes Incorporated AP7343.pdf Description: IC REG LINEAR 2.8V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
auf Bestellung 114082 Stücke:
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13+1.39 EUR
21+0.84 EUR
26+0.69 EUR
100+0.53 EUR
250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
2500+0.31 EUR
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AP7343D-18FS4-7B AP7343D-18FS4-7B Diodes Incorporated AP7343.pdf Description: IC REG LINEAR 1.8V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.39V @ 300mA
Protection Features: Over Current
auf Bestellung 10875 Stücke:
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21+0.84 EUR
26+0.69 EUR
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1000+0.36 EUR
2500+0.31 EUR
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AP7343D-33FS4-7B AP7343D-33FS4-7B Diodes Incorporated AP7343.pdf Description: IC REG LINEAR 3.3V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current
auf Bestellung 869976 Stücke:
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26+0.69 EUR
100+0.53 EUR
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1000+0.36 EUR
2500+0.31 EUR
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AP7343D-105FS4-7B AP7343D-105FS4-7B Diodes Incorporated AP7343.pdf Description: IC REG LINEAR 1.05V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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AP7343D-295FS4-7B AP7343D-295FS4-7B Diodes Incorporated AP7343.pdf Description: IC REG LINEAR 2.95V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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AP4341SNTR-G1 AP4341S.pdf
AP4341SNTR-G1
Hersteller: Diodes Incorporated
Description: ACDC PSR ACCEL SOT23
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1N5819HW1-7-F 1N5819HW1.pdf
1N5819HW1-7-F
Hersteller: Diodes Incorporated
Description: DIODE SBR 40V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Super Barrier
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 14464 Stücke:
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34+0.53 EUR
51+0.35 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
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BCM857BS-7-F BCM857BS.pdf
BCM857BS-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2PNP 45V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Part Status: Active
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72+0.25 EUR
122+0.14 EUR
500+0.11 EUR
1000+0.098 EUR
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DMN2010UDZ-7 DMN2010UDZ.pdf
DMN2010UDZ-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 11A U-DFN2535-6
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DMP6050SFG-13 DMP6050SFG.pdf
DMP6050SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 4.8A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
auf Bestellung 36713 Stücke:
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Anzahl Preis
12+1.55 EUR
18+0.99 EUR
100+0.67 EUR
500+0.53 EUR
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DMT6009LK3-13 DMT6009LK3.pdf
DMT6009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.3A/57A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 57327 Stücke:
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Anzahl Preis
8+2.36 EUR
13+1.46 EUR
100+0.97 EUR
500+0.78 EUR
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DMT6015LPS-13 DMT6015LPS.pdf
DMT6015LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 1.16W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1103 pF @ 30 V
auf Bestellung 7488 Stücke:
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Anzahl Preis
13+1.41 EUR
17+1.09 EUR
100+0.75 EUR
500+0.63 EUR
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DMTH4004SPS-13 DMTH4004SPS.pdf
DMTH4004SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7463 Stücke:
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Anzahl Preis
8+2.36 EUR
12+1.59 EUR
100+1.12 EUR
500+0.91 EUR
1000+0.84 EUR
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DMTH4007LK3-13 DMTH4007LK3.pdf
DMTH4007LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 16.8A/70A TO252
Produkt ist nicht verfügbar
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DMTH4007LPS-13 DMTH4007LPS.pdf
DMTH4007LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 15.5A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 30 V
auf Bestellung 2500 Stücke:
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Anzahl Preis
13+1.46 EUR
15+1.19 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.66 EUR
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DMTH4007SPS-13 DMTH4007SPS.pdf
DMTH4007SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V 40V POWERDI506
Produkt ist nicht verfügbar
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DMG4N60SK3-13 DMG4N60SK3.pdf
DMG4N60SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 600V 3.7A TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 48W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V
Produkt ist nicht verfügbar
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DMN1250UFEL-7 DMN1250UFEL.pdf
DMN1250UFEL-7
Hersteller: Diodes Incorporated
Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.59 EUR
6000+0.55 EUR
9000+0.53 EUR
Mindestbestellmenge: 3000
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DMT3004LPS-13 DMT3004LPS.pdf
DMT3004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.59 EUR
Mindestbestellmenge: 2500
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DMT6007LFG-7 DMT6007LFG.pdf
DMT6007LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.73 EUR
4000+0.67 EUR
6000+0.66 EUR
Mindestbestellmenge: 2000
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DMT6009LSS-13 DMT6009LSS.pdf
DMT6009LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.58 EUR
5000+0.57 EUR
7500+0.56 EUR
Mindestbestellmenge: 2500
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DMT6010LSS-13 DMT6010LSS.pdf
DMT6010LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.79 EUR
5000+0.76 EUR
Mindestbestellmenge: 2500
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DMT69M8LSS-13 DMT69M8LSS.pdf
DMT69M8LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
Produkt ist nicht verfügbar
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DMTH3004LK3-13 DMTH3004LK3.pdf
DMTH3004LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 21A/75A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Produkt ist nicht verfügbar
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DMTH4004SCTB-13 DMTH4004SCTB.pdf
DMTH4004SCTB-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.96 EUR
Mindestbestellmenge: 800
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DMTH4004SK3-13 DMTH4004SK3.pdf
DMTH4004SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.12 EUR
5000+1.07 EUR
Mindestbestellmenge: 2500
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DMTH4007SPD-13 DMTH4007SPD.pdf
DMTH4007SPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.79 EUR
Mindestbestellmenge: 2500
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DMTH6005LPS-13 DMTH6005LPS.pdf
DMTH6005LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.9 EUR
Mindestbestellmenge: 2500
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PDR5KF-13 PDR5KF.pdf
PDR5KF-13
Hersteller: Diodes Incorporated
Description: DIODE FAST 800V 5A POWERDI5
Produkt ist nicht verfügbar
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SBR10B45P5-13 SBR10B45P5.pdf
SBR10B45P5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.23 EUR
15000+0.22 EUR
Mindestbestellmenge: 5000
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SBR10B45P5-7 SBR10B45P5.pdf
SBR10B45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 94500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.29 EUR
3000+0.26 EUR
7500+0.25 EUR
10500+0.23 EUR
37500+0.22 EUR
Mindestbestellmenge: 1500
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SBR30E45CTB SBR30E45CTB.pdf
SBR30E45CTB
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 45V 15A TO263AB
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
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DMG4N60SK3-13 DMG4N60SK3.pdf
DMG4N60SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 600V 3.7A TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 48W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V
Produkt ist nicht verfügbar
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DMN1250UFEL-7 DMN1250UFEL.pdf
DMN1250UFEL-7
Hersteller: Diodes Incorporated
Description: MOSFET 8N-CH 12V 2A U-QFN1515
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 8 N-Channel, Common Gate, Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-QFN1515-12
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
13+1.43 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 8
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DMT3004LPS-13 DMT3004LPS.pdf
DMT3004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 21A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
13+1.4 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
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DMT6007LFG-7 DMT6007LFG.pdf
DMT6007LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 15176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
12+1.49 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 9
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DMT6009LSS-13 DMT6009LSS.pdf
DMT6009LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10.8A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
auf Bestellung 14516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
15+1.21 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.69 EUR
Mindestbestellmenge: 12
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DMT6010LSS-13 DMT6010LSS.pdf
DMT6010LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 6962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
12+1.59 EUR
100+1.12 EUR
500+0.94 EUR
1000+0.93 EUR
Mindestbestellmenge: 9
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DMT69M8LSS-13 DMT69M8LSS.pdf
DMT69M8LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
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DMTH4004SCTB-13 DMTH4004SCTB.pdf
DMTH4004SCTB-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO263AB T&R
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 6385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+2.13 EUR
100+1.46 EUR
Mindestbestellmenge: 6
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DMTH4004SK3-13 DMTH4004SK3.pdf
DMTH4004SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
Mindestbestellmenge: 7
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DMTH4007SPD-13 DMTH4007SPD.pdf
DMTH4007SPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
auf Bestellung 24268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+1.88 EUR
100+1.23 EUR
500+0.98 EUR
1000+0.9 EUR
Mindestbestellmenge: 6
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DMTH6005LPS-13 DMTH6005LPS.pdf
DMTH6005LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2962 pF @ 30 V
auf Bestellung 4896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
10+1.81 EUR
100+1.27 EUR
500+1.08 EUR
1000+0.99 EUR
Mindestbestellmenge: 8
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PDR5KF-13 PDR5KF.pdf
PDR5KF-13
Hersteller: Diodes Incorporated
Description: DIODE FAST 800V 5A POWERDI5
Produkt ist nicht verfügbar
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SBR10B45P5-13 SBR10B45P5.pdf
SBR10B45P5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 85110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
30+0.59 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.29 EUR
Mindestbestellmenge: 20
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SBR10B45P5-7 SBR10B45P5.pdf
SBR10B45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 45 V
auf Bestellung 94806 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
27+0.66 EUR
100+0.46 EUR
500+0.36 EUR
Mindestbestellmenge: 23
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DMT69M8LSS-13 DMT69M8LSS.pdf
DMT69M8LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V 60V,SO-8,T&R,2
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
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PDR5KF-13 PDR5KF.pdf
PDR5KF-13
Hersteller: Diodes Incorporated
Description: DIODE FAST 800V 5A POWERDI5
Produkt ist nicht verfügbar
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DMT6007LFG-13 DMT6007LFG.pdf
DMT6007LFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 15A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Produkt ist nicht verfügbar
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SBR10B45P5-7D SBR10B45P5.pdf
SBR10B45P5-7D
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A POWERDI5
Produkt ist nicht verfügbar
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SBR30E45CTB-13 SBR30E45CTB.pdf
SBR30E45CTB-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 10A TO263AB
Produkt ist nicht verfügbar
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AP65352SP-13
AP65352SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJUSTABLE 3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 650kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.765V
Produkt ist nicht verfügbar
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AP65454SP-13 AP65454.pdf
AP65454SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 4A SO-8EP
Produkt ist nicht verfügbar
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AP65454SP-13 AP65454.pdf
AP65454SP-13
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 4A SO-8EP
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PI7C9X2G404SLBFDE PI7C9X2G404SL_Sept2017_DS.pdf
PI7C9X2G404SLBFDE
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 4-Port/4-Lane
Supplier Device Package: 128-LQFP (14x14)
Part Status: Active
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.62 EUR
10+16.39 EUR
25+14.5 EUR
90+12.51 EUR
270+12.12 EUR
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BAV116S92-7 BAV116S92_Rev4-3_Nov2021.pdf
BAV116S92-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 85V 215MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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BAV116S92-7 BAV116S92_Rev4-3_Nov2021.pdf
BAV116S92-7
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 85V 215MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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DMC3028LSDXQ-13 DMC3028LSDXQ.pdf
DMC3028LSDXQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 16976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1.02 EUR
100+0.7 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 16
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AP7343D-12FS4-7B AP7343.pdf
AP7343D-12FS4-7B
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.2V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.58V @ 300mA
Protection Features: Over Current
auf Bestellung 9648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
23+0.78 EUR
28+0.65 EUR
100+0.49 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
2500+0.29 EUR
5000+0.26 EUR
Mindestbestellmenge: 14
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AP7343D-27FS4-7B AP7343.pdf
AP7343D-27FS4-7B
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.7V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
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AP7343D-28FS4-7B AP7343.pdf
AP7343D-28FS4-7B
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.8V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
auf Bestellung 114082 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.84 EUR
26+0.69 EUR
100+0.53 EUR
250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
2500+0.31 EUR
5000+0.28 EUR
Mindestbestellmenge: 13
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AP7343D-18FS4-7B AP7343.pdf
AP7343D-18FS4-7B
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.39V @ 300mA
Protection Features: Over Current
auf Bestellung 10875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.84 EUR
26+0.69 EUR
100+0.53 EUR
250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
2500+0.31 EUR
5000+0.28 EUR
Mindestbestellmenge: 13
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AP7343D-33FS4-7B AP7343.pdf
AP7343D-33FS4-7B
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V X2-DFN10104
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.29V @ 300mA
Protection Features: Over Current
auf Bestellung 869976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.84 EUR
26+0.69 EUR
100+0.53 EUR
250+0.45 EUR
500+0.4 EUR
1000+0.36 EUR
2500+0.31 EUR
5000+0.28 EUR
Mindestbestellmenge: 13
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AP7343D-105FS4-7B AP7343.pdf
AP7343D-105FS4-7B
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.05V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.7V @ 300mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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AP7343D-295FS4-7B AP7343.pdf
AP7343D-295FS4-7B
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 2.95V 300MA 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 1
Supplier Device Package: X2-DFN1010-4
Voltage - Output (Min/Fixed): 2.95V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current
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