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DMC2038LVTQ-7 DMC2038LVTQ-7 Diodes Incorporated DMC2038LVT.pdf Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMG3414UQ-13 DMG3414UQ-13 Diodes Incorporated DMG3414UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Qualification: AEC-Q101
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DMG7N65SCT DMG7N65SCT Diodes Incorporated Description: MOSFET N-CH 650V 7.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (Type TH)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
Qualification: AEC-Q101
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DMG7N65SCTI Diodes Incorporated Description: MOSFET N-CH 650V 7.7A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
Produkt ist nicht verfügbar
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DMG7N65SJ3 DMG7N65SJ3 Diodes Incorporated Description: MOSFET N-CH 650V 5.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
Qualification: AEC-Q101
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DMG8N65SCT Diodes Incorporated DMG8N65SCT.pdf Description: MOSFET N-CH 650V 8A TO220AB
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DMN1004UFV-7 DMN1004UFV-7 Diodes Incorporated DMN1004UFV.pdf Description: MOSFET N-CH 12V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V
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DMN2056U-7 DMN2056U-7 Diodes Incorporated DMN2056U.pdf Description: MOSFET N-CHANNEL 20V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 940mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V
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DMN3008SCP10-7 Diodes Incorporated DMN3008SCP10.pdf Description: MOSFET BVDSS: 25V 30V X4-DSN3415
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 7A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1476 pF @ 15 V
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DMN3016LFDF-7 DMN3016LFDF-7 Diodes Incorporated DMN3016LFDF.pdf Description: MOSFET N-CH 30V 12A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 2.02W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
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DMN60H3D5SK3-13 DMN60H3D5SK3-13 Diodes Incorporated DMN60H3D5SK3.pdf Description: MOSFET N-CH 600V 2.8A TO252
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DMNH4005SCT DMNH4005SCT Diodes Incorporated DMNH4005SCT.pdf Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 20 V
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100+2.78 EUR
500+2.26 EUR
1000+2.09 EUR
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DMNH4005SCTQ DMNH4005SCTQ Diodes Incorporated DMNH4005SCTQ.pdf Description: MOSFET N-CH 40V 150A TO220AB
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DMNH4005SPSQ-13 Diodes Incorporated DMNH4005SPSQ.pdf Description: MOSFET N-CH 40V 80A PWRDI5060-8
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DMNH4015SSD-13 DMNH4015SSD-13 Diodes Incorporated DMNH4015SSD.pdf Description: MOSFET 2N-CH 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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DMNH4026SSDQ-13 DMNH4026SSDQ-13 Diodes Incorporated DMNH4026SSDQ.pdf Description: MOSFET 2 N-CHANNEL 7.5A 8SO
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DMP1011LFV-13 Diodes Incorporated DMP1011LFV.pdf Description: MOSFET P-CH 12V 19A POWERDI3333
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DMP1011LFV-7 Diodes Incorporated DMP1011LFV.pdf Description: MOSFET P-CH 12V 19A POWERDI3333
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DMP2005UFG-7 DMP2005UFG-7 Diodes Incorporated DMP2005UFG.pdf Description: MOSFET P-CH 20V 89A POWERDI3333
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DMP2021UFDE-7 DMP2021UFDE-7 Diodes Incorporated DMP2021UFDE.pdf Description: MOSFET P-CH 20V 11.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
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DMP2035UFDF-13 DMP2035UFDF-13 Diodes Incorporated DMP2035UFDF.pdf Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
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DMP2035UFDF-7 DMP2035UFDF-7 Diodes Incorporated DMP2035UFDF.pdf Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
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DMP2040UFDF-7 DMP2040UFDF-7 Diodes Incorporated DMP2040UFDF.pdf Description: MOSFET P-CH 20V 13A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Produkt ist nicht verfügbar
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DMP2065UFDB-7 DMP2065UFDB-7 Diodes Incorporated DMP2065UFDB.pdf Description: MOSFET 2P-CH 20V 4.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
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DMP2088LCP3-7 DMP2088LCP3-7 Diodes Incorporated DMP2088LCP3.pdf Description: MOSFET P-CH 20V 2.9A X2DSN1006-3
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DMP3017SFV-13 DMP3017SFV-13 Diodes Incorporated DMP3017SFV.pdf Description: MOSFET P-CH 30V 40A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 31W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP3017SFV-7 DMP3017SFV-7 Diodes Incorporated DMP3017SFV.pdf Description: MOSFET P-CH 30V 40A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 31W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP3098LQ-7 DMP3098LQ-7 Diodes Incorporated DMP3098LQ.pdf Description: MOSFET P-CH 30V 3.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1008 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.21 EUR
6000+0.2 EUR
9000+0.19 EUR
15000+0.18 EUR
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DMT2004UFG-13 DMT2004UFG-13 Diodes Incorporated DMT2004UFG.pdf Description: MOSFET N-CH 24V 70A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
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DMT3020LFCL-7 Diodes Incorporated DMT3020LFCL.pdf Description: MOSFET N-CH 30V 7.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN1616-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
Qualification: AEC-Q101
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DSS5220TQ-13 DSS5220TQ-13 Diodes Incorporated DSS5220TQ.pdf Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Qualification: AEC-Q101
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GBL410_HF Diodes Incorporated GBL410-HF.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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KX31327009 Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM3225
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P4SMAJ11ADF-13 P4SMAJ11ADF-13 Diodes Incorporated P4SMAJ50ADF_P4SMAJ85ADF.pdf Description: TVS DIODE 11VWM 18.2VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMAJ17ADF-13 P4SMAJ17ADF-13 Diodes Incorporated P4SMAJ50ADF_P4SMAJ85ADF.pdf Description: TVS DIODE 17VWM 27.6VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14.5A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMAJ7.0ADF-13 P4SMAJ7.0ADF-13 Diodes Incorporated P4SMAJ50ADF_P4SMAJ85ADF.pdf Description: TVS DIODE 7VWM 12VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMAJ8.0ADF-13 P4SMAJ8.0ADF-13 Diodes Incorporated P4SMAJ50ADF_P4SMAJ85ADF.pdf Description: TVS DIODE 8VWM 13.6VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
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PDS4200HQ-13 PDS4200HQ-13 Diodes Incorporated PDS4200HQ.pdf Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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PI3CH3305UE Diodes Incorporated PI3CH3305.pdf Description: BUS SWITCH 3V MSOP-8
Packaging: Tube
Part Status: Obsolete
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PI3CH3305UEX Diodes Incorporated PI3CH3305.pdf Description: BUS SWITCH 3V MSOP-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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PI3CH3345LE Diodes Incorporated PI3CH3345.pdf Description: BUS SWITCH 3V TSSOP-20
Packaging: Tube
Part Status: Active
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PI3EQX7502AIZDE+DA PI3EQX7502AIZDE+DA Diodes Incorporated PI3EQX7502AI-PB.pdf Description: IC REDRIVER USB 3.0 2CH 24TQFN
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PI3EQX7502BZDE+DA PI3EQX7502BZDE+DA Diodes Incorporated PI3EQX7502B-PB.pdf Description: IC REDRIVER USB 3.0 1CH 24TQFN
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PI3EQX7502BZDE+DAX PI3EQX7502BZDE+DAX Diodes Incorporated PI3EQX7502B-PB.pdf Description: IC REDRIVER USB 3.0 1CH 24TQFN
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PI3EQX7502MZDE+CWX PI3EQX7502MZDE+CWX Diodes Incorporated PI3EQX7502M-Product-Brief.pdf Description: IC REDRIVER USB 3.0 1CH 24TQFN
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PI3HDMI511ZLE+DAX PI3HDMI511ZLE+DAX Diodes Incorporated PI3HDMI511.pdf Description: IC INTERFACE SPECIALIZED 32TQFN
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PI3HDX511DZLE+DAX PI3HDX511DZLE+DAX Diodes Incorporated PI3HDX511D-Prod-Brief.pdf Description: IC INTERFACE SPECIALIZED 30TQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 30-TQFN (2.5x4.5)
Part Status: Active
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PI3HDX511FZLIEX PI3HDX511FZLIEX Diodes Incorporated Description: IC INTERFACE SPECIALIZED 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 40-TQFN (3x6)
Part Status: Obsolete
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PI3USB10MZEE+DMX PI3USB10MZEE+DMX Diodes Incorporated PI3USB10M_Web.pdf Description: IC USB SWITCH DUAL 2X1 12TDFN
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PI3USB10MZKE+DMX PI3USB10MZKE+DMX Diodes Incorporated PI3USB10M_Web.pdf Description: IC USB SWITCH DUAL 2X1 12TQFN
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PI3USB32224BXEAEX PI3USB32224BXEAEX Diodes Incorporated Description: IC SWITCH SPST USB 2.0 8TQFN
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PI4IOE5V9520XTEX Diodes Incorporated Description: INTERFACE IO EXPANDER U-QFN1616-
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PI4IOE5V9521XTEX Diodes Incorporated PI4IOE5V9521.pdf Description: INTERFACE IO EXPANDER U-QFN1616-
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PI4IOE5V9522UEX PI4IOE5V9522UEX Diodes Incorporated PI4IOE5V9522.pdf Description: IC I/O EXPANDER 4 BIT 8-MSOP
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PI4IOE5V9538LEX PI4IOE5V9538LEX Diodes Incorporated PI4IOE5V9538-Prod-Brief.pdf Description: IC I/O EXPANDER 8-BIT 16TSSOP
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PI4IOE5V9570UEX PI4IOE5V9570UEX Diodes Incorporated PI4IOE5V9570.pdf Description: IC I/O EXPANDER 4 BIT 8-MSOP
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PI4MSD5V9545ALE PI4MSD5V9545ALE Diodes Incorporated PI4MSD5V9545A.pdf Description: IC BUS SWITCH 2 X 1:4 20TSSOP
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PI4ULS5V102UE PI4ULS5V102UE Diodes Incorporated PI4ULS5V102.pdf Description: IC TRNSLTR BIDIRECTIONAL 8MSOP
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PI5A3157BC6E+DMX PI5A3157BC6E+DMX Diodes Incorporated PI5A3157B.pdf Description: IC SWITCH SPDTX1 13OHM SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 11Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -64dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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PI5A3157BC6EX-1507 PI5A3157BC6EX-1507 Diodes Incorporated PI5A3157B.pdf Description: IC SWITCH SPDTX1 13OHM SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 11Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -64dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
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DMC2038LVTQ-7 DMC2038LVT.pdf
DMC2038LVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMG3414UQ-13 DMG3414UQ.pdf
DMG3414UQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMG7N65SCT
DMG7N65SCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 650V 7.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (Type TH)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
Qualification: AEC-Q101
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DMG7N65SCTI
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 650V 7.7A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
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DMG7N65SJ3
DMG7N65SJ3
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 650V 5.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 50 V
Qualification: AEC-Q101
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DMG8N65SCT DMG8N65SCT.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 650V 8A TO220AB
Produkt ist nicht verfügbar
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DMN1004UFV-7 DMN1004UFV.pdf
DMN1004UFV-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 70A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V
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2000+0.54 EUR
6000+0.46 EUR
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DMN2056U-7 DMN2056U.pdf
DMN2056U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 20V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 940mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
9000+0.13 EUR
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DMN3008SCP10-7 DMN3008SCP10.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V 30V X4-DSN3415
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 7A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1476 pF @ 15 V
auf Bestellung 12000 Stücke:
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AnzahlPrivatkunde
3000+0.75 EUR
6000+0.69 EUR
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DMN3016LFDF-7 DMN3016LFDF.pdf
DMN3016LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 2.02W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.3 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.25 EUR
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DMN60H3D5SK3-13 DMN60H3D5SK3.pdf
DMN60H3D5SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 600V 2.8A TO252
Produkt ist nicht verfügbar
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DMNH4005SCT DMNH4005SCT.pdf
DMNH4005SCT
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2846 pF @ 20 V
auf Bestellung 3080 Stücke:
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AnzahlPrivatkunde
4+6.18 EUR
50+3.08 EUR
100+2.78 EUR
500+2.26 EUR
1000+2.09 EUR
2000+1.99 EUR
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DMNH4005SCTQ DMNH4005SCTQ.pdf
DMNH4005SCTQ
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 150A TO220AB
Produkt ist nicht verfügbar
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DMNH4005SPSQ-13 DMNH4005SPSQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 80A PWRDI5060-8
Produkt ist nicht verfügbar
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DMNH4015SSD-13 DMNH4015SSD.pdf
DMNH4015SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.67 EUR
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DMNH4026SSDQ-13 DMNH4026SSDQ.pdf
DMNH4026SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2 N-CHANNEL 7.5A 8SO
Produkt ist nicht verfügbar
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DMP1011LFV-13 DMP1011LFV.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 19A POWERDI3333
Produkt ist nicht verfügbar
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DMP1011LFV-7 DMP1011LFV.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 19A POWERDI3333
Produkt ist nicht verfügbar
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DMP2005UFG-7 DMP2005UFG.pdf
DMP2005UFG-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 89A POWERDI3333
Produkt ist nicht verfügbar
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DMP2021UFDE-7 DMP2021UFDE.pdf
DMP2021UFDE-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 11.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
auf Bestellung 1968000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
6000+0.33 EUR
9000+0.31 EUR
30000+0.3 EUR
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DMP2035UFDF-13 DMP2035UFDF.pdf
DMP2035UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
Produkt ist nicht verfügbar
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DMP2035UFDF-7 DMP2035UFDF.pdf
DMP2035UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 8.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 2.03W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
Produkt ist nicht verfügbar
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DMP2040UFDF-7 DMP2040UFDF.pdf
DMP2040UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 13A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Produkt ist nicht verfügbar
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DMP2065UFDB-7 DMP2065UFDB.pdf
DMP2065UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.4 EUR
9000+0.36 EUR
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DMP2088LCP3-7 DMP2088LCP3.pdf
DMP2088LCP3-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.9A X2DSN1006-3
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.3 EUR
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DMP3017SFV-13 DMP3017SFV.pdf
DMP3017SFV-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 40A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 31W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP3017SFV-7 DMP3017SFV.pdf
DMP3017SFV-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 40A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2246 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 31W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP3098LQ-7 DMP3098LQ.pdf
DMP3098LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 3.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1008 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
6000+0.2 EUR
9000+0.19 EUR
15000+0.18 EUR
21000+0.17 EUR
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DMT2004UFG-13 DMT2004UFG.pdf
DMT2004UFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 24V 70A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Produkt ist nicht verfügbar
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DMT3020LFCL-7 DMT3020LFCL.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN1616-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 393 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
6000+0.3 EUR
9000+0.29 EUR
15000+0.26 EUR
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DSS5220TQ-13 DSS5220TQ.pdf
DSS5220TQ-13
Hersteller: Diodes Incorporated
Description: TRANS PNP 20V 2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 600 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBL410_HF GBL410-HF.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 6148 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.78 EUR
25+1.48 EUR
100+1.17 EUR
500+0.92 EUR
1000+0.83 EUR
2000+0.76 EUR
5000+0.69 EUR
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KX31327009
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM3225
Produkt ist nicht verfügbar
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P4SMAJ11ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
P4SMAJ11ADF-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 11VWM 18.2VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 22A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMAJ17ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
P4SMAJ17ADF-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 17VWM 27.6VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14.5A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMAJ7.0ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
P4SMAJ7.0ADF-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 7VWM 12VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Produkt ist nicht verfügbar
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P4SMAJ8.0ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
P4SMAJ8.0ADF-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 8VWM 13.6VC D-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.18 EUR
Mindestbestellmenge: 10000 Stücke
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PDS4200HQ-13 PDS4200HQ.pdf
PDS4200HQ-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PI3CH3305UE PI3CH3305.pdf
Hersteller: Diodes Incorporated
Description: BUS SWITCH 3V MSOP-8
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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PI3CH3305UEX PI3CH3305.pdf
Hersteller: Diodes Incorporated
Description: BUS SWITCH 3V MSOP-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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PI3CH3345LE PI3CH3345.pdf
Hersteller: Diodes Incorporated
Description: BUS SWITCH 3V TSSOP-20
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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PI3EQX7502AIZDE+DA PI3EQX7502AI-PB.pdf
PI3EQX7502AIZDE+DA
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 2CH 24TQFN
Produkt ist nicht verfügbar
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PI3EQX7502BZDE+DA PI3EQX7502B-PB.pdf
PI3EQX7502BZDE+DA
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 24TQFN
Produkt ist nicht verfügbar
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PI3EQX7502BZDE+DAX PI3EQX7502B-PB.pdf
PI3EQX7502BZDE+DAX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 24TQFN
Produkt ist nicht verfügbar
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PI3EQX7502MZDE+CWX PI3EQX7502M-Product-Brief.pdf
PI3EQX7502MZDE+CWX
Hersteller: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 24TQFN
Produkt ist nicht verfügbar
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PI3HDMI511ZLE+DAX PI3HDMI511.pdf
PI3HDMI511ZLE+DAX
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 32TQFN
Produkt ist nicht verfügbar
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PI3HDX511DZLE+DAX PI3HDX511D-Prod-Brief.pdf
PI3HDX511DZLE+DAX
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 30TQFN
Packaging: Tape & Reel (TR)
Package / Case: 30-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 30-TQFN (2.5x4.5)
Part Status: Active
Produkt ist nicht verfügbar
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PI3HDX511FZLIEX
PI3HDX511FZLIEX
Hersteller: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.3V
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 40-TQFN (3x6)
Part Status: Obsolete
Produkt ist nicht verfügbar
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PI3USB10MZEE+DMX PI3USB10M_Web.pdf
PI3USB10MZEE+DMX
Hersteller: Diodes Incorporated
Description: IC USB SWITCH DUAL 2X1 12TDFN
Produkt ist nicht verfügbar
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PI3USB10MZKE+DMX PI3USB10M_Web.pdf
PI3USB10MZKE+DMX
Hersteller: Diodes Incorporated
Description: IC USB SWITCH DUAL 2X1 12TQFN
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PI3USB32224BXEAEX
PI3USB32224BXEAEX
Hersteller: Diodes Incorporated
Description: IC SWITCH SPST USB 2.0 8TQFN
Produkt ist nicht verfügbar
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PI4IOE5V9520XTEX
Hersteller: Diodes Incorporated
Description: INTERFACE IO EXPANDER U-QFN1616-
Produkt ist nicht verfügbar
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PI4IOE5V9521XTEX PI4IOE5V9521.pdf
Hersteller: Diodes Incorporated
Description: INTERFACE IO EXPANDER U-QFN1616-
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PI4IOE5V9522UEX PI4IOE5V9522.pdf
PI4IOE5V9522UEX
Hersteller: Diodes Incorporated
Description: IC I/O EXPANDER 4 BIT 8-MSOP
Produkt ist nicht verfügbar
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PI4IOE5V9538LEX PI4IOE5V9538-Prod-Brief.pdf
PI4IOE5V9538LEX
Hersteller: Diodes Incorporated
Description: IC I/O EXPANDER 8-BIT 16TSSOP
Produkt ist nicht verfügbar
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PI4IOE5V9570UEX PI4IOE5V9570.pdf
PI4IOE5V9570UEX
Hersteller: Diodes Incorporated
Description: IC I/O EXPANDER 4 BIT 8-MSOP
Produkt ist nicht verfügbar
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PI4MSD5V9545ALE PI4MSD5V9545A.pdf
PI4MSD5V9545ALE
Hersteller: Diodes Incorporated
Description: IC BUS SWITCH 2 X 1:4 20TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 74 Stücke
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PI4ULS5V102UE PI4ULS5V102.pdf
PI4ULS5V102UE
Hersteller: Diodes Incorporated
Description: IC TRNSLTR BIDIRECTIONAL 8MSOP
Produkt ist nicht verfügbar
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PI5A3157BC6E+DMX PI5A3157B.pdf
PI5A3157BC6E+DMX
Hersteller: Diodes Incorporated
Description: IC SWITCH SPDTX1 13OHM SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 11Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -64dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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PI5A3157BC6EX-1507 PI5A3157B.pdf
PI5A3157BC6EX-1507
Hersteller: Diodes Incorporated
Description: IC SWITCH SPDTX1 13OHM SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 11Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: SOT-363-6 (SC-70)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -64dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 2.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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