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DMC1229UFDB-7 DMC1229UFDB-7 Diodes Incorporated DMC1229UFDB.pdf Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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DMG1016VQ-7 DMG1016VQ-7 Diodes Incorporated DMG1016VQ.pdf Description: MOSFET N/P-CH 20V 0.87A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 530mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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DMG2301L-7 DMG2301L-7 Diodes Incorporated DMG2301L.pdf Description: MOSFET P-CH 20V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V
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DMMT3904WQ-7-F DMMT3904WQ-7-F Diodes Incorporated DMMT3904W_Rev13-2_Feb2018.pdf Description: TRANS 2NPN 40V 200MA SOT-363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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DMN65D8LQ-7 DMN65D8LQ-7 Diodes Incorporated DMN65D8LQ.pdf Description: MOSFET N-CH 60V 310MA SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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DMP1045U-7 DMP1045U-7 Diodes Incorporated DMP1045U.pdf Description: MOSFET P-CH 12V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
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DMP2160UFDB-7 DMP2160UFDB-7 Diodes Incorporated DMP2160UFDB.pdf Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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DMP32D4SFB-7B DMP32D4SFB-7B Diodes Incorporated DMP32D4SFB.pdf Description: MOSFET P-CH 30V 400MA 3DFN
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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DRTR5V0U1LP-7B DRTR5V0U1LP-7B Diodes Incorporated DRTR5V0U1LP.pdf Description: TVS DIODE 5.5VWM 10VC DFN1006-2
Unidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 1pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Packaging: Cut Tape (CT)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
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FMMT558QTA FMMT558QTA Diodes Incorporated FMMT558.pdf Description: TRANS PNP 400V 0.15A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
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MMBTA06Q-7-F MMBTA06Q-7-F Diodes Incorporated MMBTA05_MMBTA06.pdf Description: TRANS NPN 80V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
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PAM2804AAB010 PAM2804AAB010 Diodes Incorporated PAM2804.pdf Description: IC LED DRIVER RGLTR 1A TSOT25
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.5MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 6V
Part Status: Active
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PAM8304AYR PAM8304AYR Diodes Incorporated PAM8304.pdf Description: IC AMP CLASS D MONO 3W DFN3030-8
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 6V
Max Output Power x Channels @ Load: 3W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
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PAM8403DR-H PAM8403DR-H Diodes Incorporated PAM8403.pdf Description: IC AUDIO AMP D 16-SOP
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.5V
Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm
Supplier Device Package: 16-SOP
Part Status: Active
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PAM8908JER PAM8908JER Diodes Incorporated PAM8908.pdf Description: IC AMP CLASS AB STER 35MW 16TQFN
Packaging: Cut Tape (CT)
Features: Short-Circuit and Thermal Protection
Package / Case: 16-UFQFN Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Max Output Power x Channels @ Load: 35mW x 2 @ 16Ohm
Supplier Device Package: U-QFN3030-16
Part Status: Active
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PI3DPX1207BZHEX PI3DPX1207BZHEX Diodes Incorporated PI3DPX1207B.pdf Description: ACTIVE DISPLAY V-QFN3590-42 T&R
Part Status: Obsolete
Signal Conditioning: Input Equalization
Supplier Device Package: 42-TQFN (9x3.5)
Data Rate (Max): 10Gbps
Applications: I2C
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: CML
Type: Buffer, ReDriver
Output: CML
Mounting Type: Surface Mount
Number of Channels: 4
Package / Case: 42-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PI3DPX1203BZLEX PI3DPX1203BZLEX Diodes Incorporated PI3DPX1203B.pdf Description: ACTIVE DISPLAY W-QFN3060-32 T&R
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Current - Supply: 243mA
Data Rate (Max): 8.1Gbps
Supplier Device Package: 32-TQFN (3x6)
Signal Conditioning: Input Equalization
Part Status: Active
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DMC2038LVTQ-7 DMC2038LVTQ-7 Diodes Incorporated DMC2038LVT.pdf Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
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PI4IOE5V96248ZLEX PI4IOE5V96248ZLEX Diodes Incorporated PI4IOE5V96248.pdf Description: IC XPNDR 1MHZ I2C 56TQFN
Part Status: Active
Current - Output Source/Sink: 42mA, 480µA
Supplier Device Package: 56-TQFN (7x7)
Interrupt Output: Yes
Clock Frequency: 1 MHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 48
Interface: I2C
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 56-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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250+3.49 EUR
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1000+2.64 EUR
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D15V0M1U2LP3-7 D15V0M1U2LP3-7 Diodes Incorporated D15V0M1U2LP3.pdf Description: TVS DIODE 15VWM 24V X3DFN06032
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 75W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 15.5V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
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20000+0.06 EUR
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DBF2510-13 DBF2510-13 Diodes Incorporated DBF2510.pdf Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Average Rectified (Io): 2.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBF
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMC3025LSDQ-13 DMC3025LSDQ-13 Diodes Incorporated DMC3025LSDQ.pdf Description: MOSFET N/P-CH 30V 6.5A 8SO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Power - Max: 1.2W (Ta)
Technology: MOSFET (Metal Oxide)
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5000+0.48 EUR
7500+0.45 EUR
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DMG4822SSDQ-13 DMG4822SSDQ-13 Diodes Incorporated DMG4822SSDQ.pdf Description: MOSFET 2N-CH 30V 10A 8SO
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.42W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DMP6050SPS-13 DMP6050SPS-13 Diodes Incorporated DMP6050SPS.pdf Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
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DMTH4011SPD-13 DMTH4011SPD-13 Diodes Incorporated DMTH4011SPD.pdf Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4011SPDQ-13 DMTH4011SPDQ-13 Diodes Incorporated DMTH4011SPDQ.pdf Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMTH43M8LPSQ-13 DMTH43M8LPSQ-13 Diodes Incorporated DMTH43M8LPSQ.pdf Description: MOSFET N-CH 40V 22A PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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D15V0M1U2LP3-7 D15V0M1U2LP3-7 Diodes Incorporated D15V0M1U2LP3.pdf Description: TVS DIODE 15VWM 24V X3DFN06032
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 75W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 15.5V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
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DBF2510-13 DBF2510-13 Diodes Incorporated DBF2510.pdf Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Average Rectified (Io): 2.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBF
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
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DMC3025LSDQ-13 DMC3025LSDQ-13 Diodes Incorporated DMC3025LSDQ.pdf Description: MOSFET N/P-CH 30V 6.5A 8SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DMG4822SSDQ-13 DMG4822SSDQ-13 Diodes Incorporated DMG4822SSDQ.pdf Description: MOSFET 2N-CH 30V 10A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.42W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
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DMP6050SPS-13 DMP6050SPS-13 Diodes Incorporated DMP6050SPS.pdf Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DMTH4011SPD-13 DMTH4011SPD-13 Diodes Incorporated DMTH4011SPD.pdf Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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DMTH4011SPDQ-13 DMTH4011SPDQ-13 Diodes Incorporated DMTH4011SPDQ.pdf Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DMTH43M8LPSQ-13 DMTH43M8LPSQ-13 Diodes Incorporated DMTH43M8LPSQ.pdf Description: MOSFET N-CH 40V 22A PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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PI4IOE5V96224ZLEX PI4IOE5V96224ZLEX Diodes Incorporated PI4IOE5V96224.pdf Description: IC XPNDR 1MHZ I2C SMBUS 32TQFN
Interrupt Output: Yes
Clock Frequency: 1 MHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 24
Interface: I²C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 32-WFQFN Exposed Pad
Features: POR
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output Source/Sink: 25mA
Supplier Device Package: 32-TQFN (3x6)
DigiKey Programmable: Not Verified
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PI3WVR13412ZHEX PI3WVR13412ZHEX Diodes Incorporated PI3WVR13412-Product-Brief.pdf Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3WVR13612ZLEX PI3WVR13612ZLEX Diodes Incorporated PI3WVR13612-Product-Brief.pdf Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3WVR13412ZHEX PI3WVR13412ZHEX Diodes Incorporated PI3WVR13412-Product-Brief.pdf Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3WVR13612ZLEX PI3WVR13612ZLEX Diodes Incorporated PI3WVR13612-Product-Brief.pdf Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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ADTC114YUAQ-7 ADTC114YUAQ-7 Diodes Incorporated ADTC114YUAQ.pdf Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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BCR421UFDQ-7 BCR421UFDQ-7 Diodes Incorporated BCR420UFDQ-BCR421UFDQ.pdf Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMP1009UFDF-7 DMP1009UFDF-7 Diodes Incorporated DMP1009UFDF.pdf Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
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DMP3013SFV-7 DMP3013SFV-7 Diodes Incorporated DMP3013SFV.pdf Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Produkt ist nicht verfügbar
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DMP34M4SPS-13 DMP34M4SPS-13 Diodes Incorporated DMP34M4SPS.pdf Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
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DMP4065SQ-7 DMP4065SQ-7 Diodes Incorporated DMP4065SQ.pdf Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 720mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
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DPD13AWF-7 DPD13AWF-7 Diodes Incorporated Description: TVS DIODES 13VWM 21.5VC SOD123F
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HDS10M-13 HDS10M-13 Diodes Incorporated HDS10M.pdf Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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PI3DPX1202A2ZBEX PI3DPX1202A2ZBEX Diodes Incorporated PI3DPX1202A.pdf Description: DISPLAY SWITCH V-QFN7070-48 T&R
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PI3PCIE3412AZHEX PI3PCIE3412AZHEX Diodes Incorporated PI3PCIE3412A.pdf Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3PCIE3412AZLEX PI3PCIE3412AZLEX Diodes Incorporated PI3PCIE3412A.pdf Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Multiplexer/Demultiplexer Circuit: 2:1
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 40-TQFN (3x6)
-3db Bandwidth: 8.2GHz
On-State Resistance (Max): 5Ohm (Typ)
Applications: PCI Express®
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 40-WFQFN Exposed Pad
Features: Bi-Directional, SATA, USB 3.0
Packaging: Cut Tape (CT)
Number of Channels: 4
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PI4IOE5V6408ZTAEX PI4IOE5V6408ZTAEX Diodes Incorporated PI4IOE5V6408.pdf Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
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PI4IOE5V9535ZDEX PI4IOE5V9535ZDEX Diodes Incorporated PI4IOE5V9535.pdf Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
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PI6CG15401ZHIEX PI6CG15401ZHIEX Diodes Incorporated PI6CG15401.pdf Description: IC CLOCK GENERATOR 32TQFN
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PI7C9X752FAEX PI7C9X752FAEX Diodes Incorporated PI7C9X752.pdf Description: IC BRIDGE DUAL UART 48TQFP
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PI7C9X794FCEX PI7C9X794FCEX Diodes Incorporated PI7C9X794.pdf Description: IC BRIDGE QUAD UART 64LQFP
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PT7C433833AZEEX PT7C433833AZEEX Diodes Incorporated PT7C433833A.pdf Description: IC RTC CLK/CALENDAR I2C 8TDFN
DigiKey Programmable: Not Verified
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
Voltage - Supply, Battery: 1.5V ~ 3.7V
Supplier Device Package: 8-TDFN (2x3)
Date Format: YY-MM-DD-dd
Time Format: HH:MM:SS (12/24 hr)
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Clock/Calendar
Interface: I2C, 2-Wire Serial
Memory Size: 56B
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Features: Leap Year, NVSRAM, Square Wave Output
Packaging: Cut Tape (CT)
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SDT30B100D1-13 SDT30B100D1-13 Diodes Incorporated SDT30B100D1.pdf Description: DIODE SCHOTTKY 100V 30A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
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DPD13AWF-7 DPD13AWF-7 Diodes Incorporated Description: TVS DIODES 13VWM 21.5VC SOD123F
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ZXMN6A08GQTC ZXMN6A08GQTC Diodes Incorporated ZXMN6A08GQ.pdf Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMC1229UFDB-7 DMC1229UFDB.pdf
DMC1229UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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DMG1016VQ-7 DMG1016VQ.pdf
DMG1016VQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.87A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 530mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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DMG2301L-7 DMG2301L.pdf
DMG2301L-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 10 V
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DMMT3904WQ-7-F DMMT3904W_Rev13-2_Feb2018.pdf
DMMT3904WQ-7-F
Hersteller: Diodes Incorporated
Description: TRANS 2NPN 40V 200MA SOT-363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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DMN65D8LQ-7 DMN65D8LQ.pdf
DMN65D8LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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DMP1045U-7 DMP1045U.pdf
DMP1045U-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1357 pF @ 10 V
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DMP2160UFDB-7 DMP2160UFDB.pdf
DMP2160UFDB-7
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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DMP32D4SFB-7B DMP32D4SFB.pdf
DMP32D4SFB-7B
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 400MA 3DFN
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
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DRTR5V0U1LP-7B DRTR5V0U1LP.pdf
DRTR5V0U1LP-7B
Hersteller: Diodes Incorporated
Description: TVS DIODE 5.5VWM 10VC DFN1006-2
Unidirectional Channels: 1
Supplier Device Package: X1-DFN1006-2
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 1pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Packaging: Cut Tape (CT)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
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FMMT558QTA FMMT558.pdf
FMMT558QTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 400V 0.15A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
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MMBTA06Q-7-F MMBTA05_MMBTA06.pdf
MMBTA06Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2939 Stücke:
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44+0.48 EUR
71+0.3 EUR
114+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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PAM2804AAB010 PAM2804.pdf
PAM2804AAB010
Hersteller: Diodes Incorporated
Description: IC LED DRIVER RGLTR 1A TSOT25
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.5MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 1A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TSOT-25
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 6V
Part Status: Active
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PAM8304AYR PAM8304.pdf
PAM8304AYR
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D MONO 3W DFN3030-8
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 6V
Max Output Power x Channels @ Load: 3W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
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15+1.4 EUR
21+1 EUR
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PAM8403DR-H PAM8403.pdf
PAM8403DR-H
Hersteller: Diodes Incorporated
Description: IC AUDIO AMP D 16-SOP
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 5.5V
Max Output Power x Channels @ Load: 3W x 2 @ 4Ohm
Supplier Device Package: 16-SOP
Part Status: Active
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15+1.46 EUR
20+1.06 EUR
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1000+0.71 EUR
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PAM8908JER PAM8908.pdf
PAM8908JER
Hersteller: Diodes Incorporated
Description: IC AMP CLASS AB STER 35MW 16TQFN
Packaging: Cut Tape (CT)
Features: Short-Circuit and Thermal Protection
Package / Case: 16-UFQFN Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Max Output Power x Channels @ Load: 35mW x 2 @ 16Ohm
Supplier Device Package: U-QFN3030-16
Part Status: Active
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16+1.38 EUR
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500+0.69 EUR
1000+0.67 EUR
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PI3DPX1207BZHEX PI3DPX1207B.pdf
PI3DPX1207BZHEX
Hersteller: Diodes Incorporated
Description: ACTIVE DISPLAY V-QFN3590-42 T&R
Part Status: Obsolete
Signal Conditioning: Input Equalization
Supplier Device Package: 42-TQFN (9x3.5)
Data Rate (Max): 10Gbps
Applications: I2C
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: CML
Type: Buffer, ReDriver
Output: CML
Mounting Type: Surface Mount
Number of Channels: 4
Package / Case: 42-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PI3DPX1203BZLEX PI3DPX1203B.pdf
PI3DPX1203BZLEX
Hersteller: Diodes Incorporated
Description: ACTIVE DISPLAY W-QFN3060-32 T&R
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Applications: DisplayPort
Current - Supply: 243mA
Data Rate (Max): 8.1Gbps
Supplier Device Package: 32-TQFN (3x6)
Signal Conditioning: Input Equalization
Part Status: Active
auf Bestellung 30515 Stücke:
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5+4.57 EUR
10+3.39 EUR
25+3.11 EUR
100+2.78 EUR
250+2.63 EUR
500+2.56 EUR
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DMC2038LVTQ-7 DMC2038LVT.pdf
DMC2038LVTQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 3.7A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6726 Stücke:
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16+1.36 EUR
25+0.86 EUR
100+0.55 EUR
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1000+0.38 EUR
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PI4IOE5V96248ZLEX PI4IOE5V96248.pdf
PI4IOE5V96248ZLEX
Hersteller: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C 56TQFN
Part Status: Active
Current - Output Source/Sink: 42mA, 480µA
Supplier Device Package: 56-TQFN (7x7)
Interrupt Output: Yes
Clock Frequency: 1 MHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 48
Interface: I2C
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 56-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 4780 Stücke:
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5+5.01 EUR
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25+4.25 EUR
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500+3.13 EUR
1000+2.64 EUR
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D15V0M1U2LP3-7 D15V0M1U2LP3.pdf
D15V0M1U2LP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 24V X3DFN06032
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 75W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 15.5V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
auf Bestellung 260000 Stücke:
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10000+0.068 EUR
20000+0.06 EUR
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DBF2510-13 DBF2510.pdf
DBF2510-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Average Rectified (Io): 2.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBF
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMC3025LSDQ-13 DMC3025LSDQ.pdf
DMC3025LSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A 8SO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Power - Max: 1.2W (Ta)
Technology: MOSFET (Metal Oxide)
auf Bestellung 477500 Stücke:
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2500+0.51 EUR
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7500+0.45 EUR
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DMG4822SSDQ-13 DMG4822SSDQ.pdf
DMG4822SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.42W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 582500 Stücke:
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2500+0.65 EUR
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DMP6050SPS-13 DMP6050SPS.pdf
DMP6050SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
auf Bestellung 725000 Stücke:
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2500+0.49 EUR
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DMTH4011SPD-13 DMTH4011SPD.pdf
DMTH4011SPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DMTH4011SPDQ-13 DMTH4011SPDQ.pdf
DMTH4011SPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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2500+0.92 EUR
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DMTH43M8LPSQ-13 DMTH43M8LPSQ.pdf
DMTH43M8LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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AnzahlPrivatkunde
2500+0.61 EUR
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D15V0M1U2LP3-7 D15V0M1U2LP3.pdf
D15V0M1U2LP3-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 15VWM 24V X3DFN06032
Voltage - Reverse Standoff (Typ): 15V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 75W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 15.5V
Unidirectional Channels: 1
Supplier Device Package: X3-DFN0603-2
auf Bestellung 263736 Stücke:
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AnzahlPrivatkunde
63+0.33 EUR
91+0.23 EUR
256+0.082 EUR
500+0.077 EUR
1000+0.071 EUR
5000+0.07 EUR
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DBF2510-13 DBF2510.pdf
DBF2510-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Average Rectified (Io): 2.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBF
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 444 Stücke:
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AnzahlPrivatkunde
21+1 EUR
25+0.87 EUR
100+0.6 EUR
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DMC3025LSDQ-13 DMC3025LSDQ.pdf
DMC3025LSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A 8SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 480161 Stücke:
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AnzahlPrivatkunde
11+2.01 EUR
17+1.26 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.57 EUR
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DMG4822SSDQ-13 DMG4822SSDQ.pdf
DMG4822SSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.42W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
auf Bestellung 589853 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.68 EUR
15+1.45 EUR
100+1 EUR
500+0.83 EUR
1000+0.71 EUR
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DMP6050SPS-13 DMP6050SPS.pdf
DMP6050SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.3W
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 725602 Stücke:
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DMTH4011SPD-13 DMTH4011SPD.pdf
DMTH4011SPD-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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DMTH4011SPDQ-13 DMTH4011SPDQ.pdf
DMTH4011SPDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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DMTH43M8LPSQ-13 DMTH43M8LPSQ.pdf
DMTH43M8LPSQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.7W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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PI4IOE5V96224ZLEX PI4IOE5V96224.pdf
PI4IOE5V96224ZLEX
Hersteller: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFN
Interrupt Output: Yes
Clock Frequency: 1 MHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 24
Interface: I²C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 32-WFQFN Exposed Pad
Features: POR
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output Source/Sink: 25mA
Supplier Device Package: 32-TQFN (3x6)
DigiKey Programmable: Not Verified
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PI3WVR13412ZHEX PI3WVR13412-Product-Brief.pdf
PI3WVR13412ZHEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3WVR13612ZLEX PI3WVR13612-Product-Brief.pdf
PI3WVR13612ZLEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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PI3WVR13412ZHEX PI3WVR13412-Product-Brief.pdf
PI3WVR13412ZHEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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7+3.01 EUR
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PI3WVR13612ZLEX PI3WVR13612-Product-Brief.pdf
PI3WVR13612ZLEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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7+3.31 EUR
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ADTC114YUAQ-7 ADTC114YUAQ.pdf
ADTC114YUAQ-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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53+0.39 EUR
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142+0.14 EUR
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BCR421UFDQ-7 BCR420UFDQ-BCR421UFDQ.pdf
BCR421UFDQ-7
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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24+0.9 EUR
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38+0.56 EUR
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DMP1009UFDF-7 DMP1009UFDF.pdf
DMP1009UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
auf Bestellung 2398 Stücke:
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16+1.32 EUR
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100+0.52 EUR
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DMP3013SFV-7 DMP3013SFV.pdf
DMP3013SFV-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Produkt ist nicht verfügbar
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DMP34M4SPS-13 DMP34M4SPS.pdf
DMP34M4SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
auf Bestellung 1097545 Stücke:
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8+2.75 EUR
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DMP4065SQ-7 DMP4065SQ.pdf
DMP4065SQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 720mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
auf Bestellung 5736 Stücke:
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DPD13AWF-7
DPD13AWF-7
Hersteller: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
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HDS10M-13 HDS10M.pdf
HDS10M-13
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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PI3DPX1202A2ZBEX PI3DPX1202A.pdf
PI3DPX1202A2ZBEX
Hersteller: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN7070-48 T&R
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PI3PCIE3412AZHEX PI3PCIE3412A.pdf
PI3PCIE3412AZHEX
Hersteller: Diodes Incorporated
Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
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6+3.71 EUR
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PI3PCIE3412AZLEX PI3PCIE3412A.pdf
PI3PCIE3412AZLEX
Hersteller: Diodes Incorporated
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Multiplexer/Demultiplexer Circuit: 2:1
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 40-TQFN (3x6)
-3db Bandwidth: 8.2GHz
On-State Resistance (Max): 5Ohm (Typ)
Applications: PCI Express®
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 40-WFQFN Exposed Pad
Features: Bi-Directional, SATA, USB 3.0
Packaging: Cut Tape (CT)
Number of Channels: 4
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PI4IOE5V6408ZTAEX PI4IOE5V6408.pdf
PI4IOE5V6408ZTAEX
Hersteller: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 760037 Stücke:
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16+1.36 EUR
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PI4IOE5V9535ZDEX PI4IOE5V9535.pdf
PI4IOE5V9535ZDEX
Hersteller: Diodes Incorporated
Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 29177 Stücke:
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8+2.67 EUR
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PI6CG15401ZHIEX PI6CG15401.pdf
PI6CG15401ZHIEX
Hersteller: Diodes Incorporated
Description: IC CLOCK GENERATOR 32TQFN
Produkt ist nicht verfügbar
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PI7C9X752FAEX PI7C9X752.pdf
PI7C9X752FAEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE DUAL UART 48TQFP
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PI7C9X794FCEX PI7C9X794.pdf
PI7C9X794FCEX
Hersteller: Diodes Incorporated
Description: IC BRIDGE QUAD UART 64LQFP
auf Bestellung 1000 Stücke:
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PT7C433833AZEEX PT7C433833A.pdf
PT7C433833AZEEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TDFN
DigiKey Programmable: Not Verified
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
Voltage - Supply, Battery: 1.5V ~ 3.7V
Supplier Device Package: 8-TDFN (2x3)
Date Format: YY-MM-DD-dd
Time Format: HH:MM:SS (12/24 hr)
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Clock/Calendar
Interface: I2C, 2-Wire Serial
Memory Size: 56B
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Features: Leap Year, NVSRAM, Square Wave Output
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SDT30B100D1-13 SDT30B100D1.pdf
SDT30B100D1-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 30A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
auf Bestellung 43811 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.99 EUR
17+1.25 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
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DPD13AWF-7
DPD13AWF-7
Hersteller: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
auf Bestellung 3000 Stücke:
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ZXMN6A08GQTC ZXMN6A08GQ.pdf
ZXMN6A08GQTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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