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PI3WVR646GEEX PI3WVR646GEEX Diodes Incorporated PI3WVR646.pdf Description: ANALOG SWITCH 3V-5V U-WLB2424-36
Features: Differential Compatibility
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 6Ohm (Typ)
-3db Bandwidth: 4.5GHz
Supplier Device Package: 36-CSP (2.44x2.44)
Voltage - Supply, Single (V+): 1.5V ~ 5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 10
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10+1.88 EUR
13+1.37 EUR
25+1.24 EUR
100+1.1 EUR
250+1.03 EUR
500+0.99 EUR
1000+0.95 EUR
Mindestbestellmenge: 10
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ADTC143ZUAQ-13 ADTC143ZUAQ-13 Diodes Incorporated Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 140000 Stücke:
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10000+0.052 EUR
50000+0.046 EUR
100000+0.041 EUR
Mindestbestellmenge: 10000
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MMSTA56Q-7-F MMSTA56Q-7-F Diodes Incorporated MMSTA56Q.pdf Description: TRANS PNP 80V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 200 mW
Qualification: AEC-Q101
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36+0.49 EUR
59+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
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D4V5H1U2LP1610-7 D4V5H1U2LP1610-7 Diodes Incorporated D4V5H1U2LP1610.pdf Description: TVS DIODE 4.5VWM UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 90A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.5V (Max)
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
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60+0.29 EUR
136+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
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DMN1006UCA6-7 DMN1006UCA6-7 Diodes Incorporated DMN1006UCA6.pdf Description: MOSFET 2N-CH X3-DSN2718-6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN2718-6
Produkt ist nicht verfügbar
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DMN1008UFDF-13 DMN1008UFDF-13 Diodes Incorporated DMN1008UFDF.pdf Description: MOSFET N-CH 12V 12.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V
Qualification: AEC-Q101
auf Bestellung 327955 Stücke:
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19+0.93 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
2000+0.23 EUR
5000+0.2 EUR
Mindestbestellmenge: 19
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DGTD65T15H2TF DGTD65T15H2TF Diodes Incorporated DGTD65T15H2TF.pdf Description: IGBT FIELD STP 650V 30A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: ITO-220AB
IGBT Type: Field Stop
Td (on/off) @ 25°C: 19ns/128ns
Switching Energy: 270µJ (on), 86µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 61 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 48 W
auf Bestellung 1224 Stücke:
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7+2.69 EUR
10+1.98 EUR
25+1.8 EUR
100+1.61 EUR
250+1.51 EUR
500+1.46 EUR
1000+1.41 EUR
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SDT30100CTE SDT30100CTE Diodes Incorporated SDT30100CTE.pdf Description: DIODE ARRAY SCHOT 100V 15A TO262
Produkt ist nicht verfügbar
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SDT40120CTFP SDT40120CTFP Diodes Incorporated SDT40120CT-SDT40120CTFP.pdf Description: DIODE ARRAY SCHOTT 120V ITO220AB
Produkt ist nicht verfügbar
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SDT40A100CTFP SDT40A100CTFP Diodes Incorporated SDT40A100CT-SDT40A100CTFP.pdf Description: DIODE ARR SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
auf Bestellung 1438 Stücke:
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13+1.39 EUR
50+1.12 EUR
100+0.89 EUR
500+0.75 EUR
1000+0.61 EUR
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ADTC143TUAQ-7 ADTC143TUAQ-7 Diodes Incorporated ADTC143TUAQ.pdf Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
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3000+0.068 EUR
6000+0.061 EUR
9000+0.057 EUR
15000+0.053 EUR
21000+0.05 EUR
30000+0.048 EUR
75000+0.043 EUR
150000+0.04 EUR
Mindestbestellmenge: 3000
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BZT52C12TQ-7-F BZT52C12TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 12V 300MW SOD523
Tolerance: ±5.4%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 147000 Stücke:
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3000+0.045 EUR
6000+0.044 EUR
9000+0.041 EUR
15000+0.039 EUR
Mindestbestellmenge: 3000
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DGD05473FN-7 DGD05473FN-7 Diodes Incorporated DGD05473.pdf Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.3V ~ 60V
Input Type: CMOS/TTL
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: W-DFN3030-10
Rise / Fall Time (Typ): 16ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
DigiKey Programmable: Not Verified
auf Bestellung 216000 Stücke:
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3000+0.47 EUR
6000+0.46 EUR
9000+0.45 EUR
15000+0.44 EUR
Mindestbestellmenge: 3000
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DMN1002UCA6-7 DMN1002UCA6-7 Diodes Incorporated DMN1002UCA6.pdf Description: MOSFET 2N-CH X4-DSN3118-6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V
Supplier Device Package: X4-DSN3118-6
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3000+0.59 EUR
6000+0.56 EUR
9000+0.53 EUR
Mindestbestellmenge: 3000
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DMN2450UFD-7 DMN2450UFD-7 Diodes Incorporated DMN2450UFD.pdf Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 200mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
auf Bestellung 5214000 Stücke:
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3000+0.096 EUR
6000+0.086 EUR
9000+0.081 EUR
15000+0.076 EUR
21000+0.073 EUR
30000+0.069 EUR
75000+0.063 EUR
150000+0.059 EUR
Mindestbestellmenge: 3000
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DMN67D7L-7 DMN67D7L-7 Diodes Incorporated DMN67D7L.pdf Description: MOSFET N-CH 60V 210MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 570mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.072 EUR
6000+0.067 EUR
9000+0.055 EUR
30000+0.054 EUR
Mindestbestellmenge: 3000
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DMP3018SFV-7 DMP3018SFV-7 Diodes Incorporated DMP3018SFV.pdf Description: MOSFET P-CH 30V 11A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2147 pF @ 15 V
auf Bestellung 18000 Stücke:
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2000+0.31 EUR
4000+0.28 EUR
6000+0.27 EUR
10000+0.26 EUR
14000+0.24 EUR
Mindestbestellmenge: 2000
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DMP3056LSDQ-13 DMP3056LSDQ-13 Diodes Incorporated DMP3056LSDQ.pdf Description: MOSFET 2P-CH 30V 6.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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2500+0.48 EUR
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DMP45H21DHE-13 DMP45H21DHE-13 Diodes Incorporated DMP45H21DHE.pdf Description: MOSFET P-CH 450V 600MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V
auf Bestellung 2500 Stücke:
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2500+0.34 EUR
Mindestbestellmenge: 2500
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FMMT494QTA FMMT494QTA Diodes Incorporated FMMT494Q.pdf Description: TRANS NPN 120V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Qualification: AEC-Q101
auf Bestellung 282000 Stücke:
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3000+0.23 EUR
6000+0.21 EUR
9000+0.2 EUR
15000+0.19 EUR
21000+0.18 EUR
30000+0.17 EUR
Mindestbestellmenge: 3000
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UMC5NQ-7 UMC5NQ-7 Diodes Incorporated UMC5NQ.pdf Description: PREBIASTRANSISTORSOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 290mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-353
Grade: Automotive
Qualification: AEC-Q101
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3000+0.099 EUR
Mindestbestellmenge: 3000
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ADTC143TUAQ-7 ADTC143TUAQ-7 Diodes Incorporated ADTC143TUAQ.pdf Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 161558 Stücke:
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53+0.33 EUR
86+0.21 EUR
139+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
Mindestbestellmenge: 53
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BZT52C12TQ-7-F BZT52C12TQ-7-F Diodes Incorporated ds30502.pdf Description: DIODE ZENER 12V 300MW SOD523
Tolerance: ±5.4%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 148195 Stücke:
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77+0.23 EUR
113+0.16 EUR
233+0.076 EUR
500+0.074 EUR
1000+0.073 EUR
Mindestbestellmenge: 77
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DGD05473FN-7 DGD05473FN-7 Diodes Incorporated DGD05473.pdf Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.3V ~ 60V
Input Type: CMOS/TTL
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: W-DFN3030-10
Rise / Fall Time (Typ): 16ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
DigiKey Programmable: Not Verified
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DMN1002UCA6-7 DMN1002UCA6-7 Diodes Incorporated DMN1002UCA6.pdf Description: MOSFET 2N-CH X4-DSN3118-6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V
Supplier Device Package: X4-DSN3118-6
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DMN2450UFD-7 DMN2450UFD-7 Diodes Incorporated DMN2450UFD.pdf Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 200mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
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DMN67D7L-7 DMN67D7L-7 Diodes Incorporated DMN67D7L.pdf Description: MOSFET N-CH 60V 210MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 570mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
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DMP3018SFV-7 DMP3018SFV-7 Diodes Incorporated DMP3018SFV.pdf Description: MOSFET P-CH 30V 11A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2147 pF @ 15 V
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DMP3056LSDQ-13 DMP3056LSDQ-13 Diodes Incorporated DMP3056LSDQ.pdf Description: MOSFET 2P-CH 30V 6.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMP45H21DHE-13 DMP45H21DHE-13 Diodes Incorporated DMP45H21DHE.pdf Description: MOSFET P-CH 450V 600MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V
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FMMT494QTA FMMT494QTA Diodes Incorporated FMMT494Q.pdf Description: TRANS NPN 120V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Qualification: AEC-Q101
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UMC5NQ-7 UMC5NQ-7 Diodes Incorporated UMC5NQ.pdf Description: PREBIASTRANSISTORSOT353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 290mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-353
Grade: Automotive
Qualification: AEC-Q101
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AL5814MP-13 AL5814MP-13 Diodes Incorporated AL5814.pdf Description: IC LED DRVR LIN PWM 15MA 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 15mA
Internal Switch(s): No
Supplier Device Package: 8-MSOP-EP
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
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AL5817MP-13 AL5817MP-13 Diodes Incorporated AL5817.pdf Description: IC LED DRVR LIN PWM 15MA 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 15mA
Internal Switch(s): No
Supplier Device Package: 8-MSOP-EP
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
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AL5814MP-13 AL5814MP-13 Diodes Incorporated AL5814.pdf Description: IC LED DRVR LIN PWM 15MA 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 15mA
Internal Switch(s): No
Supplier Device Package: 8-MSOP-EP
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
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AL5817MP-13 AL5817MP-13 Diodes Incorporated AL5817.pdf Description: IC LED DRVR LIN PWM 15MA 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 15mA
Internal Switch(s): No
Supplier Device Package: 8-MSOP-EP
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
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1N4148WQ-7-F 1N4148WQ-7-F Diodes Incorporated BAV16W_1N4148W.pdf Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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1N4148WQ-7-F 1N4148WQ-7-F Diodes Incorporated BAV16W_1N4148W.pdf Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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DT1240A-08LP3810-7 DT1240A-08LP3810-7 Diodes Incorporated DT1240A-08LP3810.pdf Description: TVS DIODE 3.3VWM 10VC UDFN38109
Packaging: Tape & Reel (TR)
Package / Case: 9-UDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN3810-9 (Type B)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 55W
Power Line Protection: No
Part Status: Active
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DT1240A-08LP3810-7 DT1240A-08LP3810-7 Diodes Incorporated DT1240A-08LP3810.pdf Description: TVS DIODE 3.3VWM 10VC UDFN38109
Packaging: Cut Tape (CT)
Package / Case: 9-UDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN3810-9 (Type B)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 55W
Power Line Protection: No
Part Status: Active
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DMT10H010LSS-13 DMT10H010LSS-13 Diodes Incorporated DMT10H010LSS.pdf Description: MOSFET N-CH 100V 11.5A/29.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
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DMP1005UFDF-7 DMP1005UFDF-7 Diodes Incorporated DMP1005UFDF.pdf Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
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DMP2045U-7 DMP2045U-7 Diodes Incorporated DMP2045U.pdf Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
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DMP2045U-7 DMP2045U-7 Diodes Incorporated DMP2045U.pdf Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
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AP2210N-5.0TRG1 AP2210N-5.0TRG1 Diodes Incorporated AP2210.pdf Description: IC REG LINEAR 5V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
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AP2553FDC-7R AP2553FDC-7R Diodes Incorporated AP255x.pdf Description: IC PWR SWITCH P-CHAN 1:1 6UDFN
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2020-6 (Type C)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Part Status: Active
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B0520LWQ-7-F B0520LWQ-7-F Diodes Incorporated B0520LW.pdf Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
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BAT54SDWQ-7-F BAT54SDWQ-7-F Diodes Incorporated BAT54SDWQ.pdf Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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BC817-16Q-7-F BC817-16Q-7-F Diodes Incorporated BC817-16Q_40Q.pdf Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Qualification: AEC-Q101
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BC817-25Q-7-F BC817-25Q-7-F Diodes Incorporated BC817-16Q_25Q_40Q.pdf Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Qualification: AEC-Q101
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BC817-40Q-13-F BC817-40Q-13-F Diodes Incorporated BC817-16Q_40Q.pdf Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Qualification: AEC-Q101
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DMC1030UFDBQ-7 DMC1030UFDBQ-7 Diodes Incorporated DMC1030UFDBQ_Rev2-3_Aug2022.pdf Description: MOSFET N/P-CH 12V 5.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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DMC2004LPK-7 DMC2004LPK-7 Diodes Incorporated ds30854.pdf Description: MOSFET N/P-CH 20V 0.75A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1612-6
Part Status: Active
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DMJ7N70SK3-13 DMJ7N70SK3-13 Diodes Incorporated DMJ7N70SK3.pdf Description: MOSFET N-CH 700V 3.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 50 V
Produkt ist nicht verfügbar
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DMN3300U-7 DMN3300U-7 Diodes Incorporated ds31181.pdf Description: MOSFET N-CH 30V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V
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DMP2088LCP3-7 DMP2088LCP3-7 Diodes Incorporated DMP2088LCP3.pdf Description: MOSFET P-CH 20V 2.9A X2DSN1006-3
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FMMT555TC FMMT555TC Diodes Incorporated FMMT555.pdf Description: TRANS PNP 150V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
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PDS1040Q-13 PDS1040Q-13 Diodes Incorporated PDS1040.pdf Description: DIODE SCHOTTKY 40V 10A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 40 V
Qualification: AEC-Q101
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74LVC1T45W6-7 74LVC1T45W6-7 Diodes Incorporated 74LVC1T45.pdf Description: IC XLTR VL BIDIR SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-26
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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AP7365-18WG-7 AP7365-18WG-7 Diodes Incorporated AP7365.pdf Description: IC REG LINEAR 1.8V 600MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
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PI3WVR646GEEX PI3WVR646.pdf
PI3WVR646GEEX
Hersteller: Diodes Incorporated
Description: ANALOG SWITCH 3V-5V U-WLB2424-36
Features: Differential Compatibility
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 6Ohm (Typ)
-3db Bandwidth: 4.5GHz
Supplier Device Package: 36-CSP (2.44x2.44)
Voltage - Supply, Single (V+): 1.5V ~ 5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 10
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ADTC143ZUAQ-13
ADTC143ZUAQ-13
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
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MMSTA56Q-7-F MMSTA56Q.pdf
MMSTA56Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 200 mW
Qualification: AEC-Q101
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36+0.49 EUR
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D4V5H1U2LP1610-7 D4V5H1U2LP1610.pdf
D4V5H1U2LP1610-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 4.5VWM UDFN16102
Packaging: Cut Tape (CT)
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 800pF @ 1MHz
Current - Peak Pulse (10/1000µs): 90A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.5V (Max)
Supplier Device Package: U-DFN1610-2 (Type B)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
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DMN1006UCA6-7 DMN1006UCA6.pdf
DMN1006UCA6-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X3-DSN2718-6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: X3-DSN2718-6
Produkt ist nicht verfügbar
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DMN1008UFDF-13 DMN1008UFDF.pdf
DMN1008UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 12.2A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V
Qualification: AEC-Q101
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19+0.93 EUR
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DGTD65T15H2TF DGTD65T15H2TF.pdf
DGTD65T15H2TF
Hersteller: Diodes Incorporated
Description: IGBT FIELD STP 650V 30A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: ITO-220AB
IGBT Type: Field Stop
Td (on/off) @ 25°C: 19ns/128ns
Switching Energy: 270µJ (on), 86µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 61 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 48 W
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7+2.69 EUR
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SDT30100CTE SDT30100CTE.pdf
SDT30100CTE
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOT 100V 15A TO262
Produkt ist nicht verfügbar
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SDT40120CTFP SDT40120CT-SDT40120CTFP.pdf
SDT40120CTFP
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SCHOTT 120V ITO220AB
Produkt ist nicht verfügbar
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SDT40A100CTFP SDT40A100CT-SDT40A100CTFP.pdf
SDT40A100CTFP
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
auf Bestellung 1438 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
50+1.12 EUR
100+0.89 EUR
500+0.75 EUR
1000+0.61 EUR
Mindestbestellmenge: 13
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ADTC143TUAQ-7 ADTC143TUAQ.pdf
ADTC143TUAQ-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 159000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.068 EUR
6000+0.061 EUR
9000+0.057 EUR
15000+0.053 EUR
21000+0.05 EUR
30000+0.048 EUR
75000+0.043 EUR
150000+0.04 EUR
Mindestbestellmenge: 3000
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BZT52C12TQ-7-F ds30502.pdf
BZT52C12TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 300MW SOD523
Tolerance: ±5.4%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.045 EUR
6000+0.044 EUR
9000+0.041 EUR
15000+0.039 EUR
Mindestbestellmenge: 3000
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DGD05473FN-7 DGD05473.pdf
DGD05473FN-7
Hersteller: Diodes Incorporated
Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.3V ~ 60V
Input Type: CMOS/TTL
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: W-DFN3030-10
Rise / Fall Time (Typ): 16ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
DigiKey Programmable: Not Verified
auf Bestellung 216000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
6000+0.46 EUR
9000+0.45 EUR
15000+0.44 EUR
Mindestbestellmenge: 3000
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DMN1002UCA6-7 DMN1002UCA6.pdf
DMN1002UCA6-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X4-DSN3118-6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V
Supplier Device Package: X4-DSN3118-6
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.59 EUR
6000+0.56 EUR
9000+0.53 EUR
Mindestbestellmenge: 3000
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DMN2450UFD-7 DMN2450UFD.pdf
DMN2450UFD-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 200mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
auf Bestellung 5214000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.096 EUR
6000+0.086 EUR
9000+0.081 EUR
15000+0.076 EUR
21000+0.073 EUR
30000+0.069 EUR
75000+0.063 EUR
150000+0.059 EUR
Mindestbestellmenge: 3000
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DMN67D7L-7 DMN67D7L.pdf
DMN67D7L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 210MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 570mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.072 EUR
6000+0.067 EUR
9000+0.055 EUR
30000+0.054 EUR
Mindestbestellmenge: 3000
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DMP3018SFV-7 DMP3018SFV.pdf
DMP3018SFV-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 11A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2147 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.31 EUR
4000+0.28 EUR
6000+0.27 EUR
10000+0.26 EUR
14000+0.24 EUR
Mindestbestellmenge: 2000
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DMP3056LSDQ-13 DMP3056LSDQ.pdf
DMP3056LSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 6.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.48 EUR
Mindestbestellmenge: 2500
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DMP45H21DHE-13 DMP45H21DHE.pdf
DMP45H21DHE-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 600MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.34 EUR
Mindestbestellmenge: 2500
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FMMT494QTA FMMT494Q.pdf
FMMT494QTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 120V 1A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Qualification: AEC-Q101
auf Bestellung 282000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.23 EUR
6000+0.21 EUR
9000+0.2 EUR
15000+0.19 EUR
21000+0.18 EUR
30000+0.17 EUR
Mindestbestellmenge: 3000
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UMC5NQ-7 UMC5NQ.pdf
UMC5NQ-7
Hersteller: Diodes Incorporated
Description: PREBIASTRANSISTORSOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 290mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-353
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.099 EUR
Mindestbestellmenge: 3000
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ADTC143TUAQ-7 ADTC143TUAQ.pdf
ADTC143TUAQ-7
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 Only
auf Bestellung 161558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
86+0.21 EUR
139+0.13 EUR
500+0.093 EUR
1000+0.082 EUR
Mindestbestellmenge: 53
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BZT52C12TQ-7-F ds30502.pdf
BZT52C12TQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ZENER 12V 300MW SOD523
Tolerance: ±5.4%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
auf Bestellung 148195 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
113+0.16 EUR
233+0.076 EUR
500+0.074 EUR
1000+0.073 EUR
Mindestbestellmenge: 77
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DGD05473FN-7 DGD05473.pdf
DGD05473FN-7
Hersteller: Diodes Incorporated
Description: IC GATE DRV HALF-BRDG DFN3030-10
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.3V ~ 60V
Input Type: CMOS/TTL
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: W-DFN3030-10
Rise / Fall Time (Typ): 16ns, 12ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
DigiKey Programmable: Not Verified
auf Bestellung 216652 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
24+0.73 EUR
27+0.66 EUR
100+0.58 EUR
250+0.54 EUR
500+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 17
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DMN1002UCA6-7 DMN1002UCA6.pdf
DMN1002UCA6-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X4-DSN3118-6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V
Supplier Device Package: X4-DSN3118-6
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
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DMN2450UFD-7 DMN2450UFD.pdf
DMN2450UFD-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 900MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 200mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 16 V
auf Bestellung 5216747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
61+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 38
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DMN67D7L-7 DMN67D7L.pdf
DMN67D7L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 210MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 570mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
auf Bestellung 57171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
60+0.29 EUR
123+0.14 EUR
500+0.12 EUR
1000+0.083 EUR
Mindestbestellmenge: 42
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DMP3018SFV-7 DMP3018SFV.pdf
DMP3018SFV-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 11A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2147 pF @ 15 V
auf Bestellung 18193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
23+0.78 EUR
100+0.5 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 17
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DMP3056LSDQ-13 DMP3056LSDQ.pdf
DMP3056LSDQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 6.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 51403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
16+1.14 EUR
100+0.68 EUR
500+0.58 EUR
1000+0.55 EUR
Mindestbestellmenge: 13
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DMP45H21DHE-13 DMP45H21DHE.pdf
DMP45H21DHE-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 450V 600MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V
auf Bestellung 3518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
23+0.78 EUR
100+0.53 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 16
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FMMT494QTA FMMT494Q.pdf
FMMT494QTA
Hersteller: Diodes Incorporated
Description: TRANS NPN 120V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Qualification: AEC-Q101
auf Bestellung 283832 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
29+0.61 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.27 EUR
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UMC5NQ-7 UMC5NQ.pdf
UMC5NQ-7
Hersteller: Diodes Incorporated
Description: PREBIASTRANSISTORSOT353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 290mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-353
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5998 Stücke:
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30+0.6 EUR
50+0.36 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
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AL5814MP-13 AL5814.pdf
AL5814MP-13
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 15MA 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 15mA
Internal Switch(s): No
Supplier Device Package: 8-MSOP-EP
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 55000 Stücke:
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2500+0.32 EUR
5000+0.3 EUR
12500+0.28 EUR
25000+0.26 EUR
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AL5817MP-13 AL5817.pdf
AL5817MP-13
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 15MA 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 15mA
Internal Switch(s): No
Supplier Device Package: 8-MSOP-EP
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 10000 Stücke:
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2500+0.46 EUR
5000+0.43 EUR
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AL5814MP-13 AL5814.pdf
AL5814MP-13
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 15MA 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 15mA
Internal Switch(s): No
Supplier Device Package: 8-MSOP-EP
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 59428 Stücke:
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20+0.92 EUR
23+0.77 EUR
25+0.72 EUR
100+0.58 EUR
250+0.54 EUR
500+0.46 EUR
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AL5817MP-13 AL5817.pdf
AL5817MP-13
Hersteller: Diodes Incorporated
Description: IC LED DRVR LIN PWM 15MA 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 105°C (TA)
Applications: Lighting
Current - Output / Channel: 15mA
Internal Switch(s): No
Supplier Device Package: 8-MSOP-EP
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 11990 Stücke:
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10+1.78 EUR
16+1.11 EUR
25+0.93 EUR
100+0.73 EUR
250+0.63 EUR
500+0.57 EUR
1000+0.52 EUR
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1N4148WQ-7-F BAV16W_1N4148W.pdf
1N4148WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.026 EUR
6000+0.023 EUR
9000+0.021 EUR
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1N4148WQ-7-F BAV16W_1N4148W.pdf
1N4148WQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 39873 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
152+0.12 EUR
217+0.081 EUR
500+0.059 EUR
1000+0.051 EUR
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DT1240A-08LP3810-7 DT1240A-08LP3810.pdf
DT1240A-08LP3810-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 10VC UDFN38109
Packaging: Tape & Reel (TR)
Package / Case: 9-UDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN3810-9 (Type B)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 55W
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
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Anzahl Preis
5000+0.15 EUR
10000+0.13 EUR
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DT1240A-08LP3810-7 DT1240A-08LP3810.pdf
DT1240A-08LP3810-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 3.3VWM 10VC UDFN38109
Packaging: Cut Tape (CT)
Package / Case: 9-UDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 85°C (TA)
Applications: DVI, HDMI, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: U-DFN3810-9 (Type B)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 55W
Power Line Protection: No
Part Status: Active
auf Bestellung 12903 Stücke:
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Anzahl Preis
30+0.6 EUR
44+0.4 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.16 EUR
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DMT10H010LSS-13 DMT10H010LSS.pdf
DMT10H010LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 11.5A/29.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 29.5A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 2599 Stücke:
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Anzahl Preis
7+2.52 EUR
10+1.9 EUR
100+1.44 EUR
500+1.17 EUR
1000+1 EUR
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DMP1005UFDF-7 DMP1005UFDF.pdf
DMP1005UFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
auf Bestellung 23036 Stücke:
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Anzahl Preis
17+1.04 EUR
24+0.76 EUR
100+0.5 EUR
500+0.38 EUR
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DMP2045U-7 DMP2045U.pdf
DMP2045U-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.095 EUR
15000+0.092 EUR
21000+0.089 EUR
30000+0.086 EUR
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DMP2045U-7 DMP2045U.pdf
DMP2045U-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
auf Bestellung 66072 Stücke:
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Anzahl Preis
67+0.26 EUR
93+0.19 EUR
106+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
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AP2210N-5.0TRG1 AP2210.pdf
AP2210N-5.0TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
auf Bestellung 5976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
86+0.21 EUR
98+0.18 EUR
115+0.15 EUR
250+0.14 EUR
500+0.13 EUR
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AP2553FDC-7R AP255x.pdf
AP2553FDC-7R
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHAN 1:1 6UDFN
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2020-6 (Type C)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Part Status: Active
auf Bestellung 5986 Stücke:
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Anzahl Preis
31+0.58 EUR
43+0.41 EUR
48+0.37 EUR
100+0.32 EUR
250+0.29 EUR
500+0.28 EUR
1000+0.27 EUR
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B0520LWQ-7-F B0520LW.pdf
B0520LWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 20V 500MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Qualification: AEC-Q101
auf Bestellung 13284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
73+0.24 EUR
119+0.15 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 50
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BAT54SDWQ-7-F BAT54SDWQ.pdf
BAT54SDWQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOT 30V 200MA SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
auf Bestellung 29364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
58+0.31 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
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BC817-16Q-7-F BC817-16Q_40Q.pdf
BC817-16Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Qualification: AEC-Q101
auf Bestellung 847387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
100+0.18 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 63
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BC817-25Q-7-F BC817-16Q_25Q_40Q.pdf
BC817-25Q-7-F
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Qualification: AEC-Q101
auf Bestellung 947060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
120+0.15 EUR
192+0.092 EUR
500+0.066 EUR
1000+0.058 EUR
Mindestbestellmenge: 72
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BC817-40Q-13-F BC817-16Q_40Q.pdf
BC817-40Q-13-F
Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Qualification: AEC-Q101
auf Bestellung 10788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
100+0.18 EUR
162+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.062 EUR
5000+0.053 EUR
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DMC1030UFDBQ-7 DMC1030UFDBQ_Rev2-3_Aug2022.pdf
DMC1030UFDBQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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Anzahl Preis
13+1.39 EUR
21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
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DMC2004LPK-7 ds30854.pdf
DMC2004LPK-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.75A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1612-6
Part Status: Active
auf Bestellung 121093 Stücke:
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17+1.07 EUR
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500+0.33 EUR
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DMJ7N70SK3-13 DMJ7N70SK3.pdf
DMJ7N70SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 700V 3.9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 50 V
Produkt ist nicht verfügbar
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DMN3300U-7 ds31181.pdf
DMN3300U-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V
auf Bestellung 586904 Stücke:
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19+0.97 EUR
30+0.6 EUR
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DMP2088LCP3-7 DMP2088LCP3.pdf
DMP2088LCP3-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.9A X2DSN1006-3
auf Bestellung 3196 Stücke:
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20+0.88 EUR
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FMMT555TC FMMT555.pdf
FMMT555TC
Hersteller: Diodes Incorporated
Description: TRANS PNP 150V 1A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
auf Bestellung 95623 Stücke:
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19+0.97 EUR
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PDS1040Q-13 PDS1040.pdf
PDS1040Q-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 10A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 361 Stücke:
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10+1.81 EUR
13+1.45 EUR
100+1.1 EUR
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74LVC1T45W6-7 74LVC1T45.pdf
74LVC1T45W6-7
Hersteller: Diodes Incorporated
Description: IC XLTR VL BIDIR SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-26
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 225018 Stücke:
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84+0.21 EUR
125+0.14 EUR
143+0.12 EUR
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AP7365-18WG-7 AP7365.pdf
AP7365-18WG-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 600MA SOT-25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-25
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
auf Bestellung 154463 Stücke:
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14+1.27 EUR
24+0.75 EUR
29+0.62 EUR
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