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DGD0636S28-13 DGD0636S28-13 Diodes Incorporated Description: IC GATE DRVR HALF-BRDG 28SO 1.5K
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 28-SO
Rise / Fall Time (Typ): 90ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DMN10H220LQ-7 DMN10H220LQ-7 Diodes Incorporated DMN10H220LQ.pdf Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
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3000+0.11 EUR
9000+0.099 EUR
15000+0.095 EUR
30000+0.091 EUR
Mindestbestellmenge: 3000
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DMN10H220LQ-7 DMN10H220LQ-7 Diodes Incorporated DMN10H220LQ.pdf Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 31564 Stücke:
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500+0.16 EUR
1000+0.15 EUR
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DMN10H220LVT-7 DMN10H220LVT-7 Diodes Incorporated DMN10H220LVT.pdf Description: MOSFET N-CH 100V 1.87A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.67W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
auf Bestellung 21000 Stücke:
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3000+0.31 EUR
6000+0.3 EUR
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15000+0.27 EUR
21000+0.26 EUR
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DMN10H220LVT-7 DMN10H220LVT-7 Diodes Incorporated DMN10H220LVT.pdf Description: MOSFET N-CH 100V 1.87A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.67W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
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500+0.42 EUR
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DMN10H220LQ-13 DMN10H220LQ-13 Diodes Incorporated DMN10H220LQ.pdf Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
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DMN10H220LQ-13 DMN10H220LQ-13 Diodes Incorporated DMN10H220LQ.pdf Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
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1000+0.16 EUR
2000+0.14 EUR
5000+0.12 EUR
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DMN10H220LFDF-13 DMN10H220LFDF-13 Diodes Incorporated DMN10H220LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
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DMN10H220LFVW-13 DMN10H220LFVW-13 Diodes Incorporated DMN10H220LFVW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V
Produkt ist nicht verfügbar
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DMN10H220LFVW-7 DMN10H220LFVW-7 Diodes Incorporated DMN10H220LFVW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V
auf Bestellung 30000 Stücke:
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2000+0.25 EUR
4000+0.22 EUR
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10000+0.2 EUR
14000+0.19 EUR
20000+0.18 EUR
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DMN10H220LDV-13 DMN10H220LDV-13 Diodes Incorporated DMN10H220LDV.pdf Description: MOSFET 2N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
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DMN10H220LDV-7 DMN10H220LDV-7 Diodes Incorporated DMN10H220LDV.pdf Description: MOSFET 2N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 14000 Stücke:
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2000+0.29 EUR
4000+0.27 EUR
6000+0.26 EUR
10000+0.24 EUR
14000+0.23 EUR
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ZXTP01500BGQTA ZXTP01500BGQTA Diodes Incorporated ZXTP01500BGQ.pdf Description: PWRHIVOLTAGETRANSISTORSOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZXTP01500BGQTA ZXTP01500BGQTA Diodes Incorporated ZXTP01500BGQ.pdf Description: PWRHIVOLTAGETRANSISTORSOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74AHCT1G00W5-7 74AHCT1G00W5-7 Diodes Incorporated 74AHCT1G00.pdf Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 150000 Stücke:
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3000+0.084 EUR
6000+0.073 EUR
15000+0.062 EUR
30000+0.059 EUR
75000+0.055 EUR
150000+0.048 EUR
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74AHCT1G00W5-7 74AHCT1G00W5-7 Diodes Incorporated 74AHCT1G00.pdf Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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45+0.39 EUR
54+0.33 EUR
100+0.21 EUR
250+0.16 EUR
500+0.14 EUR
1000+0.093 EUR
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AP64501QSP-EVM AP64501QSP-EVM Diodes Incorporated AP64501QSP-EVM.PDF Description: EVAL BOARD FOR AP64501Q
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 5A
Frequency - Switching: 570kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64501Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
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PI3USB3000ZUAEX PI3USB3000ZUAEX Diodes Incorporated PI3USB3000.pdf Description: USB2 SWITCH U-QFN1520-10 T&R 3K
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 5.5GHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
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PI3USB3000ZUAEX PI3USB3000ZUAEX Diodes Incorporated PI3USB3000.pdf Description: USB2 SWITCH U-QFN1520-10 T&R 3K
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 5.5GHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
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250+0.97 EUR
500+0.88 EUR
1000+0.8 EUR
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B290AE-13 B290AE-13 Diodes Incorporated B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 90V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 90 V
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B290AE-13 B290AE-13 Diodes Incorporated B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 90V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 90 V
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500+0.2 EUR
1000+0.18 EUR
2000+0.16 EUR
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PI6ULS5V9509UEX PI6ULS5V9509UEX Diodes Incorporated PI6ULS5V9509.pdf Description: IC REDRIVER I2C 1CH 400KHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 3V ~ 5.5V
Applications: I2C
Current - Supply: 3mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 6 pF
Produkt ist nicht verfügbar
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PI6ULS5V9509UEX PI6ULS5V9509UEX Diodes Incorporated PI6ULS5V9509.pdf Description: IC REDRIVER I2C 1CH 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 3V ~ 5.5V
Applications: I2C
Current - Supply: 3mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 6 pF
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DMN2036UCB4-7 DMN2036UCB4-7 Diodes Incorporated DMN2036UCB4.pdf Description: MOSFET 2N-CH X2-WLB1616
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Supplier Device Package: X2-WLB1616-4
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DMN2036UCB4-7 DMN2036UCB4-7 Diodes Incorporated DMN2036UCB4.pdf Description: MOSFET 2N-CH X2-WLB1616
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Supplier Device Package: X2-WLB1616-4
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1.5KE12CA-B 1.5KE12CA-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 10.2VWM 16.7VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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FD6250009 FD6250009 Diodes Incorporated FD_3-3V.pdf Description: XTAL OSC XO 62.5000MHZ CMOS SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 25mA
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 62.5 MHz
Base Resonator: Crystal
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PI2DBS32412ZTFEX PI2DBS32412ZTFEX Diodes Incorporated ZTF32_Dwg_7-30-21.pdf Description: PCIE SWITCH U-QFN2048-32 T&R 3.5
Packaging: Tape & Reel (TR)
Features: Bi-Directional, USB 3.0, USB 3.1
Package / Case: 32-UFQFN Exposed Pad
Operating Temperature: -40°C ~ 105°C
Applications: PCIe, USB
Supplier Device Package: 32-QFN (2x4.8)
Voltage - Supply, Single (V+): 1.8V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Mounting Type: Surface Mount
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DXT651Q-13 DXT651Q-13 Diodes Incorporated DXT651Q.pdf Description: TRANS NPN 60V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: AEC-Q101
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DXT651Q-13 DXT651Q-13 Diodes Incorporated DXT651Q.pdf Description: TRANS NPN 60V 3A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: AEC-Q101
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ZXTP19100CZTA ZXTP19100CZTA Diodes Incorporated ZXTP19100CZ.pdf Description: TRANS PNP 100V 2A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.4 W
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ZXTP19100CZTA ZXTP19100CZTA Diodes Incorporated ZXTP19100CZ.pdf Description: TRANS PNP 100V 2A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.4 W
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DST847BPDP6-7 DST847BPDP6-7 Diodes Incorporated Description: TRANS NPN/PNP 45V 0.1A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz, 340MHz
Supplier Device Package: SOT-963
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DST847BPDP6-7 DST847BPDP6-7 Diodes Incorporated Description: TRANS NPN/PNP 45V 0.1A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz, 340MHz
Supplier Device Package: SOT-963
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ZXTP25140BFHQTA ZXTP25140BFHQTA Diodes Incorporated ZXTP25140BFHQ.pdf Description: TRANS PNP 140V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 100mA, 1A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 5.84 W
Qualification: AEC-Q101
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ZXTP25140BFHQTA ZXTP25140BFHQTA Diodes Incorporated ZXTP25140BFHQ.pdf Description: TRANS PNP 140V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 100mA, 1A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 5.84 W
Qualification: AEC-Q101
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ZXTP2014ZQTA ZXTP2014ZQTA Diodes Incorporated ZXTP2014ZQ.pdf Description: PWR LOW SAT TRANSISTOR SOT89 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: AEC-Q101
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VN10LPSTZ VN10LPSTZ Diodes Incorporated VN10LP.pdf Description: MOSFET VMOS N-CHAN TO92-3
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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ZVN4210ASTZ ZVN4210ASTZ Diodes Incorporated ZVN4210A.pdf Description: MOSFET N-CH 100V 450MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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ZVN4210ASTZ ZVN4210ASTZ Diodes Incorporated ZVN4210A.pdf Description: MOSFET N-CH 100V 450MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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74LVC1G00FW4-7 74LVC1G00FW4-7 Diodes Incorporated 74LVC1G00.pdf Description: IC GATE NAND 1CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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74LVC1G00FW4-7 74LVC1G00FW4-7 Diodes Incorporated 74LVC1G00.pdf Description: IC GATE NAND 1CH 2-INP DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
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ZXMS82120S14P-13 ZXMS82120S14P-13 Diodes Incorporated ZXMS82120S14P.pdf Description: HIGH SIDE INTELLIFET SO-14EP T&R
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 2 x 1:1
Supplier Device Package: 14-SO-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
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DMN61D8LVT-13 DMN61D8LVT-13 Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
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DMN61D8LVT-13 DMN61D8LVT-13 Diodes Incorporated DMN61D8L-LVT.pdf Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
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BZT52HC6V8WFQ-7 BZT52HC6V8WFQ-7 Diodes Incorporated BZT52HC5V6WFQ-BZT52HC30WFQ.pdf Description: Zener Diode SOD123F T&R 3K
Packaging: Bulk
Tolerance: ±6.1%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: AEC-Q101
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BZT52HC24WFQ-7 BZT52HC24WFQ-7 Diodes Incorporated BZT52HC5V6WFQ-BZT52HC30WFQ.pdf Description: Zener Diode SOD123F T&R 3K
Packaging: Bulk
Tolerance: ±5.83%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Qualification: AEC-Q101
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SMCJ90AQ-13-F SMCJ90AQ-13-F Diodes Incorporated SMCJ5.0CAQ-SMCJ200CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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3.0SMCJ90AQ-13 3.0SMCJ90AQ-13 Diodes Incorporated 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMF4L200A-7 SMF4L200A-7 Diodes Incorporated SMF4L5.0CA-SMF4L200CA.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 15000 Stücke:
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SMF4L200AQ-7 SMF4L200AQ-7 Diodes Incorporated SMF4L5.0CAQ-SMF4L200CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZLDO1117QKTC ZLDO1117QKTC Diodes Incorporated ZLDO1117Q.pdf Description: LDO BJT HICURR TO252 T&R 2.5K
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Max): 16.65V
Voltage - Output (Min/Fixed): 1.25V
Grade: Automotive
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.35V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 14700 Stücke:
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10+1.9 EUR
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ZXMN3A04KTC ZXMN3A04KTC Diodes Incorporated ZXMN3A04K.pdf Description: MOSFET N-CH 30V 18.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250mA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 9990 Stücke:
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4+4.59 EUR
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500+1.66 EUR
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APX803L-27SR-7 APX803L-27SR-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.7V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
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APX803L-27SR-7 APX803L-27SR-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.7V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
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APX803L05-29SR-7 APX803L05-29SR-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
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APX803L05-29SR-7 APX803L05-29SR-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
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APX803L40-27SR-7 APX803L40-27SR-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 292ms Minimum
Voltage - Threshold: 2.7V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
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APX803L40-27SR-7 APX803L40-27SR-7 Diodes Incorporated APX803L.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 292ms Minimum
Voltage - Threshold: 2.7V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
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AP7313-28SRG-7 AP7313-28SRG-7 Diodes Incorporated AP7313.pdf Description: IC REG LIN 2.8V 150MA SOT23R-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT23R
Voltage - Output (Min/Fixed): 2.8V
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
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DGD0636S28-13
DGD0636S28-13
Hersteller: Diodes Incorporated
Description: IC GATE DRVR HALF-BRDG 28SO 1.5K
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: 28-SO
Rise / Fall Time (Typ): 90ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DMN10H220LQ-7 DMN10H220LQ.pdf
DMN10H220LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
9000+0.099 EUR
15000+0.095 EUR
30000+0.091 EUR
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DMN10H220LQ-7 DMN10H220LQ.pdf
DMN10H220LQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 31564 Stücke:
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Anzahl Preis
29+0.62 EUR
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DMN10H220LVT-7 DMN10H220LVT.pdf
DMN10H220LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.87A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.67W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
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3000+0.31 EUR
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DMN10H220LVT-7 DMN10H220LVT.pdf
DMN10H220LVT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.87A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.67W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
auf Bestellung 21009 Stücke:
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13+1.37 EUR
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DMN10H220LQ-13 DMN10H220LQ.pdf
DMN10H220LQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
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DMN10H220LQ-13 DMN10H220LQ.pdf
DMN10H220LQ-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15569 Stücke:
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29+0.62 EUR
46+0.38 EUR
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DMN10H220LFDF-13 DMN10H220LFDF.pdf
DMN10H220LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V
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DMN10H220LFVW-13 DMN10H220LFVW.pdf
DMN10H220LFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V
Produkt ist nicht verfügbar
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DMN10H220LFVW-7 DMN10H220LFVW.pdf
DMN10H220LFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V
auf Bestellung 30000 Stücke:
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Anzahl Preis
2000+0.25 EUR
4000+0.22 EUR
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DMN10H220LDV-13 DMN10H220LDV.pdf
DMN10H220LDV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
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DMN10H220LDV-7 DMN10H220LDV.pdf
DMN10H220LDV-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V
Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
auf Bestellung 14000 Stücke:
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Anzahl Preis
2000+0.29 EUR
4000+0.27 EUR
6000+0.26 EUR
10000+0.24 EUR
14000+0.23 EUR
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ZXTP01500BGQTA ZXTP01500BGQ.pdf
ZXTP01500BGQTA
Hersteller: Diodes Incorporated
Description: PWRHIVOLTAGETRANSISTORSOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZXTP01500BGQTA ZXTP01500BGQ.pdf
ZXTP01500BGQTA
Hersteller: Diodes Incorporated
Description: PWRHIVOLTAGETRANSISTORSOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223-3
Grade: Automotive
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 3 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74AHCT1G00W5-7 74AHCT1G00.pdf
74AHCT1G00W5-7
Hersteller: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 150000 Stücke:
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Anzahl Preis
3000+0.084 EUR
6000+0.073 EUR
15000+0.062 EUR
30000+0.059 EUR
75000+0.055 EUR
150000+0.048 EUR
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74AHCT1G00W5-7 74AHCT1G00.pdf
74AHCT1G00W5-7
Hersteller: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 152782 Stücke:
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36+0.49 EUR
45+0.39 EUR
54+0.33 EUR
100+0.21 EUR
250+0.16 EUR
500+0.14 EUR
1000+0.093 EUR
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AP64501QSP-EVM AP64501QSP-EVM.PDF
AP64501QSP-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP64501Q
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 5A
Frequency - Switching: 570kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64501Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
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Anzahl Preis
1+63.85 EUR
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PI3USB3000ZUAEX PI3USB3000.pdf
PI3USB3000ZUAEX
Hersteller: Diodes Incorporated
Description: USB2 SWITCH U-QFN1520-10 T&R 3K
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 5.5GHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 1971000 Stücke:
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Anzahl Preis
3000+0.7 EUR
6000+0.65 EUR
9000+0.63 EUR
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PI3USB3000ZUAEX PI3USB3000.pdf
PI3USB3000ZUAEX
Hersteller: Diodes Incorporated
Description: USB2 SWITCH U-QFN1520-10 T&R 3K
Packaging: Cut Tape (CT)
Features: USB 2.0
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 9Ohm
-3db Bandwidth: 5.5GHz
Supplier Device Package: 10-UQFN (1.5x2)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
auf Bestellung 1973520 Stücke:
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Anzahl Preis
7+2.8 EUR
11+1.73 EUR
25+1.45 EUR
100+1.13 EUR
250+0.97 EUR
500+0.88 EUR
1000+0.8 EUR
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B290AE-13 B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf
B290AE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 90 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.11 EUR
10000+0.1 EUR
Mindestbestellmenge: 5000
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B290AE-13 B270%28A%2CB%29E%20-%20B2100%28A%2CB%29E.pdf
B290AE-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 90V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 90 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
41+0.43 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
2000+0.16 EUR
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PI6ULS5V9509UEX PI6ULS5V9509.pdf
PI6ULS5V9509UEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 3V ~ 5.5V
Applications: I2C
Current - Supply: 3mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 6 pF
Produkt ist nicht verfügbar
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PI6ULS5V9509UEX PI6ULS5V9509.pdf
PI6ULS5V9509UEX
Hersteller: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Voltage - Supply: 3V ~ 5.5V
Applications: I2C
Current - Supply: 3mA
Data Rate (Max): 400kHz
Supplier Device Package: 8-MSOP
Capacitance - Input: 6 pF
auf Bestellung 1155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
10+1.93 EUR
25+1.62 EUR
100+1.27 EUR
250+1.1 EUR
500+0.99 EUR
1000+0.91 EUR
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DMN2036UCB4-7 DMN2036UCB4.pdf
DMN2036UCB4-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X2-WLB1616
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Supplier Device Package: X2-WLB1616-4
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.28 EUR
21000+0.27 EUR
Mindestbestellmenge: 3000
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DMN2036UCB4-7 DMN2036UCB4.pdf
DMN2036UCB4-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH X2-WLB1616
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.45W
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Supplier Device Package: X2-WLB1616-4
auf Bestellung 23830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
22+0.84 EUR
100+0.55 EUR
500+0.44 EUR
1000+0.4 EUR
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1.5KE12CA-B ds21503.pdf
1.5KE12CA-B
Hersteller: Diodes Incorporated
Description: TVS DIODE 10.2VWM 16.7VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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FD6250009 FD_3-3V.pdf
FD6250009
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 62.5000MHZ CMOS SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 25mA
Height - Seated (Max): 0.051" (1.30mm)
Frequency: 62.5 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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PI2DBS32412ZTFEX ZTF32_Dwg_7-30-21.pdf
PI2DBS32412ZTFEX
Hersteller: Diodes Incorporated
Description: PCIE SWITCH U-QFN2048-32 T&R 3.5
Packaging: Tape & Reel (TR)
Features: Bi-Directional, USB 3.0, USB 3.1
Package / Case: 32-UFQFN Exposed Pad
Operating Temperature: -40°C ~ 105°C
Applications: PCIe, USB
Supplier Device Package: 32-QFN (2x4.8)
Voltage - Supply, Single (V+): 1.8V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Mounting Type: Surface Mount
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+4.64 EUR
Mindestbestellmenge: 3500
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DXT651Q-13 DXT651Q.pdf
DXT651Q-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DXT651Q-13 DXT651Q.pdf
DXT651Q-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 3A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: AEC-Q101
auf Bestellung 2274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
25+0.72 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
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ZXTP19100CZTA ZXTP19100CZ.pdf
ZXTP19100CZTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 2A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.4 W
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.51 EUR
2000+0.46 EUR
5000+0.43 EUR
10000+0.4 EUR
Mindestbestellmenge: 1000
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ZXTP19100CZTA ZXTP19100CZ.pdf
ZXTP19100CZTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 2A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 295mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 142MHz
Supplier Device Package: SOT-89-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.4 W
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
17+1.05 EUR
100+0.72 EUR
500+0.6 EUR
Mindestbestellmenge: 15
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DST847BPDP6-7
DST847BPDP6-7
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 45V 0.1A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz, 340MHz
Supplier Device Package: SOT-963
auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
50000+0.089 EUR
Mindestbestellmenge: 10000
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DST847BPDP6-7
DST847BPDP6-7
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 45V 0.1A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz, 340MHz
Supplier Device Package: SOT-963
auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
35+0.51 EUR
100+0.26 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.13 EUR
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ZXTP25140BFHQTA ZXTP25140BFHQ.pdf
ZXTP25140BFHQTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 140V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 100mA, 1A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 5.84 W
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.44 EUR
6000+0.42 EUR
9000+0.38 EUR
Mindestbestellmenge: 3000
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ZXTP25140BFHQTA ZXTP25140BFHQ.pdf
ZXTP25140BFHQTA
Hersteller: Diodes Incorporated
Description: TRANS PNP 140V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 100mA, 1A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 5.84 W
Qualification: AEC-Q101
auf Bestellung 10017 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1 EUR
100+0.69 EUR
500+0.58 EUR
1000+0.49 EUR
Mindestbestellmenge: 16
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ZXTP2014ZQTA ZXTP2014ZQ.pdf
ZXTP2014ZQTA
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR SOT89 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-89-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.61 EUR
2000+0.54 EUR
5000+0.51 EUR
10000+0.47 EUR
Mindestbestellmenge: 1000
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VN10LPSTZ VN10LP.pdf
VN10LPSTZ
Hersteller: Diodes Incorporated
Description: MOSFET VMOS N-CHAN TO92-3
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.53 EUR
6000+0.5 EUR
10000+0.46 EUR
Mindestbestellmenge: 2000
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ZVN4210ASTZ ZVN4210A.pdf
ZVN4210ASTZ
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 450MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.29 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.6 EUR
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ZVN4210ASTZ ZVN4210A.pdf
ZVN4210ASTZ
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 450MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 98000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.55 EUR
4000+0.51 EUR
6000+0.48 EUR
10000+0.46 EUR
Mindestbestellmenge: 2000
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74LVC1G00FW4-7 74LVC1G00.pdf
74LVC1G00FW4-7
Hersteller: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.19 EUR
10000+0.17 EUR
15000+0.16 EUR
25000+0.15 EUR
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74LVC1G00FW4-7 74LVC1G00.pdf
74LVC1G00FW4-7
Hersteller: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
auf Bestellung 39900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
31+0.58 EUR
37+0.48 EUR
100+0.36 EUR
250+0.3 EUR
500+0.27 EUR
1000+0.24 EUR
2500+0.2 EUR
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ZXMS82120S14P-13 ZXMS82120S14P.pdf
ZXMS82120S14P-13
Hersteller: Diodes Incorporated
Description: HIGH SIDE INTELLIFET SO-14EP T&R
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 2 x 1:1
Supplier Device Package: 14-SO-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Produkt ist nicht verfügbar
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DMN61D8LVT-13 DMN61D8L-LVT.pdf
DMN61D8LVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.25 EUR
Mindestbestellmenge: 10000
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DMN61D8LVT-13 DMN61D8L-LVT.pdf
DMN61D8LVT-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.63A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSOT-26
auf Bestellung 12434 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.78 EUR
100+0.41 EUR
500+0.35 EUR
1000+0.3 EUR
2000+0.28 EUR
5000+0.25 EUR
Mindestbestellmenge: 14
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BZT52HC6V8WFQ-7 BZT52HC5V6WFQ-BZT52HC30WFQ.pdf
BZT52HC6V8WFQ-7
Hersteller: Diodes Incorporated
Description: Zener Diode SOD123F T&R 3K
Packaging: Bulk
Tolerance: ±6.1%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: AEC-Q101
auf Bestellung 117000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.084 EUR
Mindestbestellmenge: 3000
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BZT52HC24WFQ-7 BZT52HC5V6WFQ-BZT52HC30WFQ.pdf
BZT52HC24WFQ-7
Hersteller: Diodes Incorporated
Description: Zener Diode SOD123F T&R 3K
Packaging: Bulk
Tolerance: ±5.83%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMCJ90AQ-13-F SMCJ5.0CAQ-SMCJ200CAQ.pdf
SMCJ90AQ-13-F
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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3.0SMCJ90AQ-13 3.0SMCJ5.0CA-3.0SMCJ170CA.pdf
3.0SMCJ90AQ-13
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMF4L200A-7 SMF4L5.0CA-SMF4L200CA.pdf
SMF4L200A-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
15000+0.11 EUR
Mindestbestellmenge: 3000
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SMF4L200AQ-7 SMF4L5.0CAQ-SMF4L200CAQ.pdf
SMF4L200AQ-7
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 224V
Voltage - Clamping (Max) @ Ipp: 324V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZLDO1117QKTC ZLDO1117Q.pdf
ZLDO1117QKTC
Hersteller: Diodes Incorporated
Description: LDO BJT HICURR TO252 T&R 2.5K
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Max): 16.65V
Voltage - Output (Min/Fixed): 1.25V
Grade: Automotive
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.35V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
auf Bestellung 14700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
16+1.16 EUR
25+0.96 EUR
100+0.74 EUR
250+0.63 EUR
500+0.56 EUR
1000+0.51 EUR
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ZXMN3A04KTC ZXMN3A04K.pdf
ZXMN3A04KTC
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 18.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250mA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.59 EUR
10+2.98 EUR
100+2.05 EUR
500+1.66 EUR
1000+1.53 EUR
Mindestbestellmenge: 4
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APX803L-27SR-7 APX803L.pdf
APX803L-27SR-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.7V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
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APX803L-27SR-7 APX803L.pdf
APX803L-27SR-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.7V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
30+0.59 EUR
37+0.48 EUR
100+0.36 EUR
250+0.31 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 18
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APX803L05-29SR-7 APX803L.pdf
APX803L05-29SR-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
auf Bestellung 198000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
6000+0.18 EUR
9000+0.17 EUR
15000+0.16 EUR
30000+0.15 EUR
75000+0.14 EUR
Mindestbestellmenge: 3000
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APX803L05-29SR-7 APX803L.pdf
APX803L05-29SR-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 35ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
auf Bestellung 200975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
30+0.59 EUR
37+0.48 EUR
100+0.36 EUR
250+0.31 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 18
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APX803L40-27SR-7 APX803L.pdf
APX803L40-27SR-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 292ms Minimum
Voltage - Threshold: 2.7V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.18 EUR
6000+0.17 EUR
15000+0.15 EUR
30000+0.14 EUR
Mindestbestellmenge: 3000
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APX803L40-27SR-7 APX803L.pdf
APX803L40-27SR-7
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23R-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 292ms Minimum
Voltage - Threshold: 2.7V
Supplier Device Package: SOT23R
DigiKey Programmable: Not Verified
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
36+0.5 EUR
39+0.46 EUR
100+0.34 EUR
250+0.31 EUR
500+0.26 EUR
1000+0.19 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
AP7313-28SRG-7 AP7313.pdf
AP7313-28SRG-7
Hersteller: Diodes Incorporated
Description: IC REG LIN 2.8V 150MA SOT23R-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT23R
Voltage - Output (Min/Fixed): 2.8V
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 85 µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.18 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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