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BFS17NQTA BFS17NQTA Diodes Incorporated ds32160.pdf Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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DMP3035SFG-7 DMP3035SFG-7 Diodes Incorporated DMP3035SFG.pdf Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
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DMP3035SFG-7 DMP3035SFG-7 Diodes Incorporated DMP3035SFG.pdf Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
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1N4148WSQ-13-F 1N4148WSQ-13-F Diodes Incorporated 1N4148WS_BAV16WS.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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FMC500001Q FMC500001Q Diodes Incorporated FM_2-5V.pdf Description: XTAL OSC XO 125.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.081" L x 0.063" W (2.05mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Frequency: 125 MHz
Base Resonator: Crystal
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PI6ULS5V9515AZEEX PI6ULS5V9515AZEEX Diodes Incorporated PI6ULS5V9515A.pdf Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 1.7mA
Applications: I2C
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 113ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Capacitance - Input: 6 pF
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PI6ULS5V9515AZEEX PI6ULS5V9515AZEEX Diodes Incorporated PI6ULS5V9515A.pdf Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Capacitance - Input: 6 pF
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 1.7mA
Applications: I2C
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 113ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
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PI6ULS5V9517BZEEX PI6ULS5V9517BZEEX Diodes Incorporated PI6ULS5V9517B.pdf Description: INTERFACE ULS W-DFN2030-8
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 500µA
Applications: I2C
Voltage - Supply: 0.8V ~ 5.5V
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 169ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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PI3DBV10ZEEX PI3DBV10ZEEX Diodes Incorporated PI3DBV10.pdf Description: IC VIDEO SWITCH 2X1 12TDFN
Packaging: Tape & Reel (TR)
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 12-TDFN (3.5x3)
-3db Bandwidth: 500MHz
On-State Resistance (Max): 8Ohm
Applications: Video
Mounting Type: Surface Mount
Package / Case: 12-WFDFN Exposed Pad
Produkt ist nicht verfügbar
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SDM1M40LP8Q-7 SDM1M40LP8Q-7 Diodes Incorporated SDM1M40LP8Q.pdf Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Tape & Reel (TR)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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SDM1M40LP8Q-7 SDM1M40LP8Q-7 Diodes Incorporated SDM1M40LP8Q.pdf Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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D50V0S1U2LP1608-7 D50V0S1U2LP1608-7 Diodes Incorporated D12V0S1U2LP1608-D50V0S1U2LP1608.pdf Description: TVS DIODE 50VWM 90VC UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 126pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 50V
Supplier Device Package: U-DFN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56V
Voltage - Clamping (Max) @ Ipp: 90V
Power Line Protection: No
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SBR1M100BLP-7 SBR1M100BLP-7 Diodes Incorporated SBR1M100BLP.pdf Description: BRIDGE RECT 1P 100V 1A DFN3030
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Grade: Automotive
Supplier Device Package: U-DFN3030-4
Technology: Super Barrier
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-PowerUDFN
Packaging: Tape & Reel (TR)
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SBR1M100BLP-7 SBR1M100BLP-7 Diodes Incorporated SBR1M100BLP.pdf Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Cut Tape (CT)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
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1.5KE82A-B 1.5KE82A-B Diodes Incorporated ds21503.pdf Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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DSC06A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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DSC06A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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B250AE-13 B250AE-13 Diodes Incorporated B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 50V 2A SMA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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FL2500094 FL2500094 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FL2500094 FL2500094 Diodes Incorporated FL.pdf Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FZT956QTA FZT956QTA Diodes Incorporated FZT956.pdf Description: TRANS PNP 200V 2A SOT-223-3
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 2 A
Grade: Automotive
Supplier Device Package: SOT-223-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
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HBS410-13 HBS410-13 Diodes Incorporated HBS410.pdf Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS410-13 HBS410-13 Diodes Incorporated HBS410.pdf Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS610-13 HBS610-13 Diodes Incorporated HBS610.pdf Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: HBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HBS610-13 HBS610-13 Diodes Incorporated HBS610.pdf Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: HBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
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DMT6017LFDF-7 DMT6017LFDF-7 Diodes Incorporated DMT6017LFDF.pdf Description: MOSFET N-CH 65V 8.1A 6UDFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
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DMT6013LSS-13 DMT6013LSS-13 Diodes Incorporated DMT6013LSS.pdf Description: MOSFET N-CH 60V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT6013LSS-13 DMT6013LSS-13 Diodes Incorporated DMT6013LSS.pdf Description: MOSFET N-CH 60V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DMT6017LDV-7 DMT6017LDV-7 Diodes Incorporated DMT6017LDV.pdf Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMT6017LDV-7 DMT6017LDV-7 Diodes Incorporated DMT6017LDV.pdf Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMP4016SPSW-13 DMP4016SPSW-13 Diodes Incorporated DMP4016SPSW.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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DMP4016SPSWQ-13 DMP4016SPSWQ-13 Diodes Incorporated DMP4016SPSWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
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DMT26M0LDG-7 Diodes Incorporated Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
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DMT26M0LDG-13 Diodes Incorporated Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
Produkt ist nicht verfügbar
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DMP3056L-13 DMP3056L-13 Diodes Incorporated DMP3056L.pdf Description: MOSFET P-CH 30V 4.3A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.38W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP3056L-13 DMP3056L-13 Diodes Incorporated DMP3056L.pdf Description: MOSFET P-CH 30V 4.3A SOT23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.38W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
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ZXTD2090E6TA Diodes Incorporated Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
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ZXTD2090E6TA Diodes Incorporated Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
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AP22971GD8-7 AP22971GD8-7 Diodes Incorporated AP22971.pdf Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
Produkt ist nicht verfügbar
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AP22971GD8-7 AP22971GD8-7 Diodes Incorporated AP22971.pdf Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
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PI6CB332004AZLFEX-13R PI6CB332004AZLFEX-13R Diodes Incorporated PI6CB332004A.pdf Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
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PI6CB332004AZLFEX-13R PI6CB332004AZLFEX-13R Diodes Incorporated PI6CB332004A.pdf Description: IC
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
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SPX2940U-L-5-0 SPX2940U-L-5-0 Diodes Incorporated spx2940_ds_rev200_080609.pdf Description: IC REG LINEAR 5V 1A TO220-3
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Voltage Dropout (Max): 0.28V @ 1A
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 16V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
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MMBTA64-7-F-W MMBTA64-7-F-W Diodes Incorporated MMBTA64.pdf Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
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MMBTA63-7-F-W MMBTA63-7-F-W Diodes Incorporated MMBTA63.pdf Description: TRANS PNP DARL 30V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: AEC-Q101
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MMBTA63-7-F-W MMBTA63-7-F-W Diodes Incorporated MMBTA63.pdf Description: TRANS PNP DARL 30V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: AEC-Q101
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B230BE-13 B230BE-13 Diodes Incorporated B220%28A%2CB%29E%20-%20B245%28A%2CB%29E.pdf Description: DIODE SCHOTTKY 30V 2A SMB
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP9101CAK-CLTRG1 AP9101CAK-CLTRG1 Diodes Incorporated AP9101C.pdf Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
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AP9101CAK6-ALTRG1 Diodes Incorporated Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
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MMBT4401-13-F-W MMBT4401-13-F-W Diodes Incorporated MMBT4401.pdf Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
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MMBT4401-13-F-W MMBT4401-13-F-W Diodes Incorporated MMBT4401.pdf Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
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FN6600058 FN6600058 Diodes Incorporated FN6600058.pdf Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
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FN6600058 FN6600058 Diodes Incorporated FN6600058.pdf Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
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FN6600061 FN6600061 Diodes Incorporated FN6600061.pdf Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
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ZXT951KQTC ZXT951KQTC Diodes Incorporated ZXT951KQ.pdf Description: TRANS PNP 60V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
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ZXT951KQTC ZXT951KQTC Diodes Incorporated ZXT951KQ.pdf Description: TRANS PNP 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
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BAV16W-7-F-W BAV16W-7-F-W Diodes Incorporated BAV16W.pdf Description: FAST SWITCHING DIODE SOD123 T&R
Packaging: Tape & Reel (TR)
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MURS360BQ MURS360BQ Diodes Incorporated MURS360BQ.pdf Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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MURS360Q MURS360Q Diodes Incorporated MURS360Q.pdf Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (Type C)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
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AP68355QSP-13 AP68355QSP-13 Diodes Incorporated AP68255Q_AP68355Q.pdf Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 80V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: No
Voltage - Output (Max): 50V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Qualification: AEC-Q100
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BFS17NQTA ds32160.pdf
Hersteller: Diodes Incorporated
Description: RF TRANS NPN 11V 3.2GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 310mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Frequency - Transition: 3.2GHz
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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DMP3035SFG-7 DMP3035SFG.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
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DMP3035SFG-7 DMP3035SFG.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.5A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V
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1N4148WSQ-13-F 1N4148WS_BAV16WS.pdf
Hersteller: Diodes Incorporated
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Qualification: AEC-Q101
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FMC500001Q FM_2-5V.pdf
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 125.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.081" L x 0.063" W (2.05mm x 1.60mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V
Frequency: 125 MHz
Base Resonator: Crystal
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PI6ULS5V9515AZEEX PI6ULS5V9515A.pdf
Hersteller: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 1.7mA
Applications: I2C
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 113ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Capacitance - Input: 6 pF
Produkt ist nicht verfügbar
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PI6ULS5V9515AZEEX PI6ULS5V9515A.pdf
Hersteller: Diodes Incorporated
Description: IC REDRIVER I2C 1CH 400KHZ 8TDFN
Capacitance - Input: 6 pF
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 1.7mA
Applications: I2C
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 113ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
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PI6ULS5V9517BZEEX PI6ULS5V9517B.pdf
Hersteller: Diodes Incorporated
Description: INTERFACE ULS W-DFN2030-8
Supplier Device Package: 8-TDFN (2x3)
Data Rate (Max): 400kHz
Current - Supply: 500µA
Applications: I2C
Voltage - Supply: 0.8V ~ 5.5V
Input: 2-Wire Bus
Type: Buffer, ReDriver
Output: 2-Wire Bus
Mounting Type: Surface Mount
Number of Channels: 2
Delay Time: 169ns
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PI3DBV10ZEEX PI3DBV10.pdf
Hersteller: Diodes Incorporated
Description: IC VIDEO SWITCH 2X1 12TDFN
Packaging: Tape & Reel (TR)
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 12-TDFN (3.5x3)
-3db Bandwidth: 500MHz
On-State Resistance (Max): 8Ohm
Applications: Video
Mounting Type: Surface Mount
Package / Case: 12-WFDFN Exposed Pad
Produkt ist nicht verfügbar
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SDM1M40LP8Q-7 SDM1M40LP8Q.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Tape & Reel (TR)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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SDM1M40LP8Q-7 SDM1M40LP8Q.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.4 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: U-DFN1608-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Qualification: AEC-Q101
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D50V0S1U2LP1608-7 D12V0S1U2LP1608-D50V0S1U2LP1608.pdf
Hersteller: Diodes Incorporated
Description: TVS DIODE 50VWM 90VC UDFN16082
Packaging: Cut Tape (CT)
Package / Case: 2-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 126pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 50V
Supplier Device Package: U-DFN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56V
Voltage - Clamping (Max) @ Ipp: 90V
Power Line Protection: No
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SBR1M100BLP-7 SBR1M100BLP.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1A DFN3030
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Grade: Automotive
Supplier Device Package: U-DFN3030-4
Technology: Super Barrier
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-PowerUDFN
Packaging: Tape & Reel (TR)
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SBR1M100BLP-7 SBR1M100BLP.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1P 100V 1A DFN3030
Packaging: Cut Tape (CT)
Package / Case: 4-PowerUDFN
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Super Barrier
Supplier Device Package: U-DFN3030-4
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Qualification: AEC-Q101
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1.5KE82A-B ds21503.pdf
Hersteller: Diodes Incorporated
Description: TVS DIODE 70.1VWM 113VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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DSC06A065LP-13
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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DSC06A065LP-13
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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B250AE-13 B250%28A%2CB%29E%2C%20B260%28A%2CB%29E.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 50V 2A SMA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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FL2500094 FL.pdf
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FL2500094 FL.pdf
Hersteller: Diodes Incorporated
Description: CRYSTAL 25.0000MHZ 8PF SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Load Capacitance: 8pF
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±10ppm
Frequency Tolerance: ±10ppm
Operating Mode: Fundamental
Supplier Device Package: 4-SMD (3.2x2.5)
Height - Seated (Max): 0.031" (0.78mm)
ESR (Equivalent Series Resistance): 60 Ohms
Frequency: 25 MHz
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FZT956QTA FZT956.pdf
Hersteller: Diodes Incorporated
Description: TRANS PNP 200V 2A SOT-223-3
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 2 A
Grade: Automotive
Supplier Device Package: SOT-223-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
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HBS410-13 HBS410.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS410-13 HBS410.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 4A HBS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HBS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HBS610-13 HBS610.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: HBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HBS610-13 HBS610.pdf
Hersteller: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 6A HBS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: HBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
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DMT6017LFDF-7 DMT6017LFDF.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 65V 8.1A 6UDFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 800mW (Ta)
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DMT6013LSS-13 DMT6013LSS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMT6013LSS-13 DMT6013LSS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DMT6017LDV-7 DMT6017LDV.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Produkt ist nicht verfügbar
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DMT6017LDV-7 DMT6017LDV.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25.3 PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
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DMP4016SPSW-13 DMP4016SPSW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMP4016SPSWQ-13 DMP4016SPSWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Produkt ist nicht verfügbar
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DMT26M0LDG-7
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
Produkt ist nicht verfügbar
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DMT26M0LDG-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25V 11.6A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 33.8A (Tc), 20.1A (Ta), 52.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 13V, 4016pF @ 13V
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V, 2mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V, 57.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.2V @ 1mA
Supplier Device Package: PowerDI3333-8 (Type F)
Produkt ist nicht verfügbar
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DMP3056L-13 DMP3056L.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.38W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMP3056L-13 DMP3056L.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 4.3A SOT23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.38W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
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ZXTD2090E6TA
Hersteller: Diodes Incorporated
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
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3000+0.8 EUR
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ZXTD2090E6TA
Hersteller: Diodes Incorporated
Description: TRANS 2NPN DUAL 50V 1A SOT-26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 215MHz
Supplier Device Package: SOT-26
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AP22971GD8-7 AP22971.pdf
Hersteller: Diodes Incorporated
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
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AP22971GD8-7 AP22971.pdf
Hersteller: Diodes Incorporated
Description: LOAD SWITCH LOW VOLTAGE X1-WLB19
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-XFBGA, WLBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.7mOhm
Input Type: Non-Inverting
Voltage - Load: 0.65V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-WLP (1.88x0.88)
Fault Protection: Over Temperature
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20+1.05 EUR
29+0.74 EUR
32+0.65 EUR
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PI6CB332004AZLFEX-13R PI6CB332004A.pdf
Hersteller: Diodes Incorporated
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
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3500+5.05 EUR
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PI6CB332004AZLFEX-13R PI6CB332004A.pdf
Hersteller: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: HCSL
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 28-QFN (4x4)
Frequency - Max: 400 MHz
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3+9.28 EUR
10+7.04 EUR
25+6.49 EUR
50+6.14 EUR
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SPX2940U-L-5-0 spx2940_ds_rev200_080609.pdf
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 1A TO220-3
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Voltage Dropout (Max): 0.28V @ 1A
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 16V
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
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MMBTA64-7-F-W MMBTA64.pdf
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMBTA63-7-F-W MMBTA63.pdf
Hersteller: Diodes Incorporated
Description: TRANS PNP DARL 30V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMBTA63-7-F-W MMBTA63.pdf
Hersteller: Diodes Incorporated
Description: TRANS PNP DARL 30V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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B230BE-13 B220%28A%2CB%29E%20-%20B245%28A%2CB%29E.pdf
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 30V 2A SMB
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AP9101CAK-CLTRG1 AP9101C.pdf
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-25
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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AP9101CAK6-ALTRG1
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
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MMBT4401-13-F-W MMBT4401.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
auf Bestellung 90000 Stücke:
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AnzahlPrivatkunde
10000+0.044 EUR
30000+0.038 EUR
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MMBT4401-13-F-W MMBT4401.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
auf Bestellung 99968 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
115+0.18 EUR
141+0.15 EUR
162+0.13 EUR
188+0.11 EUR
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FN6600058 FN6600058.pdf
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
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AnzahlPrivatkunde
1000+1.65 EUR
2000+1.58 EUR
3000+1.55 EUR
5000+1.5 EUR
7000+1.46 EUR
10000+1.43 EUR
12000+1.42 EUR
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FN6600058 FN6600058.pdf
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Cut Tape (CT)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
auf Bestellung 28000 Stücke:
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9+2.51 EUR
10+2.18 EUR
25+2.07 EUR
50+1.98 EUR
100+1.89 EUR
250+1.8 EUR
500+1.73 EUR
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FN6600061 FN6600061.pdf
Hersteller: Diodes Incorporated
Description: XTAL OSC XO 66.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 66 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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ZXT951KQTC ZXT951KQ.pdf
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ZXT951KQTC ZXT951KQ.pdf
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 600mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2.1 W
Qualification: AEC-Q101
auf Bestellung 2304 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.66 EUR
10+3 EUR
100+2.05 EUR
500+1.64 EUR
1000+1.54 EUR
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BAV16W-7-F-W BAV16W.pdf
Hersteller: Diodes Incorporated
Description: FAST SWITCHING DIODE SOD123 T&R
Packaging: Tape & Reel (TR)
auf Bestellung 129000 Stücke:
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AnzahlPrivatkunde
3000+0.038 EUR
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MURS360BQ MURS360BQ.pdf
Hersteller: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.76 EUR
20+1.09 EUR
25+0.92 EUR
50+0.8 EUR
100+0.7 EUR
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MURS360Q MURS360Q.pdf
Hersteller: Diodes Incorporated
Description: IC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (Type C)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.88 EUR
18+1.17 EUR
25+0.98 EUR
50+0.86 EUR
100+0.76 EUR
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AP68355QSP-13 AP68255Q_AP68355Q.pdf
Hersteller: Diodes Incorporated
Description: DCDC Cont HV Buck SO-8EP T&R 4K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.5A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 80V
Topology: Buck
Supplier Device Package: 8-SO-EP
Synchronous Rectifier: No
Voltage - Output (Max): 50V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+2.86 EUR
Mindestbestellmenge: 4000 Stücke
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