Produkte > HARRIS CORPORATION > Alle Produkte des Herstellers HARRIS CORPORATION (4164) > Seite 1 nach 70
Foto | Bezeichnung | Hersteller | Beschreibung |
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06212XXBXBT7A | Harris Corporation |
Description: 06212XXBXBT7A Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
100121A | Harris Corporation |
![]() Packaging: Bulk Package / Case: 24-CDIP (0.400", 10.16mm) Mounting Type: Through Hole Logic Type: Inverter Operating Temperature: 0°C ~ 85°C Voltage - Supply: 4.2V ~ 5.7V Number of Inputs: 1 Supplier Device Package: 24-CERDIP Input Logic Level - High: 0.88V Input Logic Level - Low: 1.49V Number of Circuits: 9 |
auf Bestellung 415 Stücke: Lieferzeit 10-14 Tag (e) |
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100371A | Harris Corporation |
![]() Packaging: Bulk |
auf Bestellung 385 Stücke: Lieferzeit 10-14 Tag (e) |
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10N50F1D | Harris Corporation |
Description: HGTP10N50F1D - N-CHANNEL IGBT Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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1N4246 | Harris Corporation |
![]() Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
auf Bestellung 8803 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5060 | Harris Corporation |
![]() Packaging: Bulk Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 12363 Stücke: Lieferzeit 10-14 Tag (e) |
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29110BJA | Harris Corporation |
![]() Packaging: Bulk Package / Case: 24-CDIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 24-CERDIP Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 165 Stücke: Lieferzeit 10-14 Tag (e) |
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2N1613 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
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2N1700 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 200µA Current - Collector Cutoff (Max): 75µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 4V Supplier Device Package: TO-39 Voltage - Collector Emitter Breakdown (Max): 40 V |
auf Bestellung 148 Stücke: Lieferzeit 10-14 Tag (e) |
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2N1893 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 15A, 150A Current - Collector Cutoff (Max): 10nA (ICBO) Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW |
auf Bestellung 836 Stücke: Lieferzeit 10-14 Tag (e) |
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2N3053 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 5 W |
auf Bestellung 3400 Stücke: Lieferzeit 10-14 Tag (e) |
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2N3393 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 4.5V Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
auf Bestellung 1660 Stücke: Lieferzeit 10-14 Tag (e) |
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2N3440 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Frequency - Transition: 15MHz Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
auf Bestellung 14983 Stücke: Lieferzeit 10-14 Tag (e) |
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2N3773V | Harris Corporation |
![]() Packaging: Bulk Part Status: Active |
auf Bestellung 1370 Stücke: Lieferzeit 10-14 Tag (e) |
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2N3955A | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-71-6 Metal Can Mounting Type: Through Hole FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 50 V Supplier Device Package: TO-71 Part Status: Active |
auf Bestellung 162 Stücke: Lieferzeit 10-14 Tag (e) |
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2N4123 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
auf Bestellung 316 Stücke: Lieferzeit 10-14 Tag (e) |
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2N4125 | Harris Corporation |
![]() ![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Frequency - Transition: 200MHz Supplier Device Package: TO-92 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
2N4988 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-98-3 |
auf Bestellung 6636 Stücke: Lieferzeit 10-14 Tag (e) |
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2N4989 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-98-3 Voltage: 30V |
auf Bestellung 922 Stücke: Lieferzeit 10-14 Tag (e) |
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2N4990 | Harris Corporation |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
2N5362 | Harris Corporation |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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2N5490 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 4V Frequency - Transition: 800kHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 50 W |
auf Bestellung 565 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5492 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 2.5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2.5A, 4V Frequency - Transition: 800kHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 55 V Power - Max: 50 W |
auf Bestellung 292 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5634 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 2V Frequency - Transition: 1MHz Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 150 W |
auf Bestellung 301 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5671 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 90 V Power - Max: 6 W |
auf Bestellung 1291 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5786 | Harris Corporation |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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2N5871 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP DC Current Gain (hFE) (Min) @ Ic, Vce: 2.5 @ 4A, 20V Frequency - Transition: 4MHz Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 115 W |
auf Bestellung 478 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5879 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 175°C (TJ) Current - Collector Cutoff (Max): 500µA (ICBO) Frequency - Transition: 4MHz Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 160 W |
auf Bestellung 1805 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6108 | Harris Corporation |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
2N612340 | Harris Corporation | Description: NPN POWER TRANSISTOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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2N6126 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V Frequency - Transition: 2.5MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
auf Bestellung 608 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6129 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.2A, 16A Frequency - Transition: 2.5MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 40 V |
auf Bestellung 593 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6131 | Harris Corporation |
![]() Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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2N6134 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.2A, 16A Frequency - Transition: 2.5MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W |
auf Bestellung 374 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6264 | Harris Corporation |
Description: POWER BIPOLAR TRANSISTOR NPN Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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2N6293 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V Frequency - Transition: 10MHz Supplier Device Package: TO-220 Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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2N6387 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
auf Bestellung 2368 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6475 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.5A, 4V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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2N6478 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 2.5A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 50 W |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6487 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V Frequency - Transition: 5MHz Supplier Device Package: TO-220AB Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W |
auf Bestellung 2904 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6532 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 65 W |
auf Bestellung 832 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6739 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 4A, 8A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 3V Frequency - Transition: 60MHz Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 100 W |
auf Bestellung 649 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6751 | Harris Corporation |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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2N6757 | Harris Corporation |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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2N6759 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-204AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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2N6760 | Harris Corporation |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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2N6760TXV | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-204AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
auf Bestellung 112 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6771 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 3V Frequency - Transition: 50MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 40 W |
auf Bestellung 2151 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6773 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 3V Frequency - Transition: 50MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 40 W |
auf Bestellung 860 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6786 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.25A (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.25A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-205AF (TO-39) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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2N6792 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.25A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-205AF (TO-39) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 10903 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6792TX | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.25A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-205AF (TO-39) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 335 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6895 | Harris Corporation |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
2N6968 | Harris Corporation |
Description: NPN POWER TRANSISTOR Packaging: Bulk |
auf Bestellung 748 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6969 | Harris Corporation |
Description: NPN POWER TRANSISTOR Packaging: Bulk |
auf Bestellung 6612 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7224JANTXV | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
3N206 | Harris Corporation |
![]() Packaging: Bulk Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Configuration: N-Channel Dual Gate Technology: MOSFET (Metal Oxide) Supplier Device Package: TO-72 Part Status: Active |
auf Bestellung 612 Stücke: Lieferzeit 10-14 Tag (e) |
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4145591A | Harris Corporation |
Description: 4145591A Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
42MLA1206 | Harris Corporation | Description: 42MLA1206 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
50187J | Harris Corporation |
Description: 50187J - DUAL MARKED (CS82C5496) Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 8950 Stücke: Lieferzeit 10-14 Tag (e) |
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100121A |
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Hersteller: Harris Corporation
Description: 100K SERIES, 9-FUNC, 1-INPUT
Packaging: Bulk
Package / Case: 24-CDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 1
Supplier Device Package: 24-CERDIP
Input Logic Level - High: 0.88V
Input Logic Level - Low: 1.49V
Number of Circuits: 9
Description: 100K SERIES, 9-FUNC, 1-INPUT
Packaging: Bulk
Package / Case: 24-CDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 1
Supplier Device Package: 24-CERDIP
Input Logic Level - High: 0.88V
Input Logic Level - Low: 1.49V
Number of Circuits: 9
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 137.30 EUR |
100371A |
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auf Bestellung 385 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 13.22 EUR |
10N50F1D |
Hersteller: Harris Corporation
Description: HGTP10N50F1D - N-CHANNEL IGBT
Packaging: Bulk
Part Status: Active
Description: HGTP10N50F1D - N-CHANNEL IGBT
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4246 |
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Hersteller: Harris Corporation
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 8803 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
83+ | 5.89 EUR |
1N5060 |
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Hersteller: Harris Corporation
Description: DIODE STANDARD 400V 3A SOD57
Packaging: Bulk
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 3A SOD57
Packaging: Bulk
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 12363 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1567+ | 0.31 EUR |
29110BJA |
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Hersteller: Harris Corporation
Description: IC SRAM 16KBIT PARALLEL 24CERDIP
Packaging: Bulk
Package / Case: 24-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 24-CERDIP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 16KBIT PARALLEL 24CERDIP
Packaging: Bulk
Package / Case: 24-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 16Kbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 24-CERDIP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 165 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 322.70 EUR |
2N1613 |
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Hersteller: Harris Corporation
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Description: TRANS NPN 30V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 32.95 EUR |
2N1700 |
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Hersteller: Harris Corporation
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 200µA
Current - Collector Cutoff (Max): 75µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 4V
Supplier Device Package: TO-39
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 200µA
Current - Collector Cutoff (Max): 75µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 4V
Supplier Device Package: TO-39
Voltage - Collector Emitter Breakdown (Max): 40 V
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 74.63 EUR |
2N1893 |
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Hersteller: Harris Corporation
Description: TRANS NPN 80V 0.5A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 15A, 150A
Current - Collector Cutoff (Max): 10nA (ICBO)
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Description: TRANS NPN 80V 0.5A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 15A, 150A
Current - Collector Cutoff (Max): 10nA (ICBO)
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
auf Bestellung 836 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 45.75 EUR |
2N3053 |
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Hersteller: Harris Corporation
Description: TRANS NPN 40V 0.7A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 5 W
Description: TRANS NPN 40V 0.7A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 5 W
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 76.58 EUR |
2N3393 |
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Hersteller: Harris Corporation
Description: TRANS NPN 25V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 4.5V
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS NPN 25V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 4.5V
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
auf Bestellung 1660 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
781+ | 0.62 EUR |
2N3440 |
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Hersteller: Harris Corporation
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
auf Bestellung 14983 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 20.86 EUR |
2N3773V |
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Hersteller: Harris Corporation
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
auf Bestellung 1370 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
147+ | 3.33 EUR |
2N3955A |
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Hersteller: Harris Corporation
Description: JFET 2N-CH 50V TO71
Packaging: Bulk
Package / Case: TO-71-6 Metal Can
Mounting Type: Through Hole
FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-71
Part Status: Active
Description: JFET 2N-CH 50V TO71
Packaging: Bulk
Package / Case: TO-71-6 Metal Can
Mounting Type: Through Hole
FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: TO-71
Part Status: Active
auf Bestellung 162 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 10.42 EUR |
2N4123 |
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Hersteller: Harris Corporation
Description: TRANS NPN 30V 0.2A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS NPN 30V 0.2A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
auf Bestellung 316 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
316+ | 1.17 EUR |
2N4125 | ![]() |
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Hersteller: Harris Corporation
Description: TRANS PNP 30V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N4988 |
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Hersteller: Harris Corporation
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-98-3
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-98-3
auf Bestellung 6636 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
485+ | 1.01 EUR |
2N4989 |
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Hersteller: Harris Corporation
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-98-3
Voltage: 30V
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-98-3
Voltage: 30V
auf Bestellung 922 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
189+ | 2.60 EUR |
2N4990 |
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Hersteller: Harris Corporation
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N5362 |
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Hersteller: Harris Corporation
Description: N - CHANNEL JFET
Description: N - CHANNEL JFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N5490 |
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Hersteller: Harris Corporation
Description: TRANS NPN 40V 7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 4V
Frequency - Transition: 800kHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 50 W
Description: TRANS NPN 40V 7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 4V
Frequency - Transition: 800kHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 50 W
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
272+ | 1.78 EUR |
2N5492 |
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Hersteller: Harris Corporation
Description: TRANS NPN 55V 7A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2.5A, 4V
Frequency - Transition: 800kHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 50 W
Description: TRANS NPN 55V 7A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2.5A, 4V
Frequency - Transition: 800kHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 50 W
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
292+ | 2.18 EUR |
2N5634 |
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Hersteller: Harris Corporation
Description: TRANS NPN 140V 10A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 2V
Frequency - Transition: 1MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 150 W
Description: TRANS NPN 140V 10A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 2V
Frequency - Transition: 1MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 150 W
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 109.50 EUR |
2N5671 |
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Hersteller: Harris Corporation
Description: TRANS NPN 90V 30A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 6 W
Description: TRANS NPN 90V 30A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 6 W
auf Bestellung 1291 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 93.02 EUR |
2N5786 |
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Hersteller: Harris Corporation
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N5871 |
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Hersteller: Harris Corporation
Description: TRANS PNP 60V 7A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 2.5 @ 4A, 20V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 115 W
Description: TRANS PNP 60V 7A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 2.5 @ 4A, 20V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 115 W
auf Bestellung 478 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 112.76 EUR |
2N5879 |
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Hersteller: Harris Corporation
Description: TRANS PNP 60V 15A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Current - Collector Cutoff (Max): 500µA (ICBO)
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 160 W
Description: TRANS PNP 60V 15A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 175°C (TJ)
Current - Collector Cutoff (Max): 500µA (ICBO)
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 160 W
auf Bestellung 1805 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 112.76 EUR |
2N6108 |
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Hersteller: Harris Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP
Description: POWER BIPOLAR TRANSISTOR, PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N612340 |
Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Description: NPN POWER TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N6126 |
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Hersteller: Harris Corporation
Description: TRANS PNP 80V 4A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2.5MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS PNP 80V 4A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2.5MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
auf Bestellung 608 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
307+ | 1.59 EUR |
2N6129 |
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Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.2A, 16A
Frequency - Transition: 2.5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: NPN POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.2A, 16A
Frequency - Transition: 2.5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 40 V
auf Bestellung 593 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
293+ | 1.67 EUR |
2N6134 |
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Hersteller: Harris Corporation
Description: TRANS PNP 80V 7A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.2A, 16A
Frequency - Transition: 2.5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Description: TRANS PNP 80V 7A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.2A, 16A
Frequency - Transition: 2.5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
247+ | 2.06 EUR |
2N6264 |
Hersteller: Harris Corporation
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N6293 |
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Hersteller: Harris Corporation
Description: TRANS NPN 80V 7A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS NPN 80V 7A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 4V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N6387 |
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Hersteller: Harris Corporation
Description: TRANS NPN DARL 60V 10A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS NPN DARL 60V 10A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
auf Bestellung 2368 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
247+ | 2.06 EUR |
2N6475 |
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Hersteller: Harris Corporation
Description: TRANS PNP 100V 4A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.5A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 40 W
Description: TRANS PNP 100V 4A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.5A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 40 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N6478 |
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Hersteller: Harris Corporation
Description: TRANS NPN 150V 2.5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 50 W
Description: TRANS NPN 150V 2.5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 50 W
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
273+ | 1.81 EUR |
2N6487 |
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Hersteller: Harris Corporation
Description: TRANS NPN 60V 15A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
Description: TRANS NPN 60V 15A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 5A, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 2904 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
314+ | 1.61 EUR |
2N6532 |
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Hersteller: Harris Corporation
Description: TRANS NPN DARL 100V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
Description: TRANS NPN DARL 100V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
auf Bestellung 832 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
102+ | 4.75 EUR |
2N6739 |
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Hersteller: Harris Corporation
Description: TRANS NPN 350V 8A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 4A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 3V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 100 W
Description: TRANS NPN 350V 8A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 4A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 3V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 100 W
auf Bestellung 649 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
174+ | 2.80 EUR |
2N6751 |
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Hersteller: Harris Corporation
Description: TRANS NPN 400V 10A TO3
Description: TRANS NPN 400V 10A TO3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N6757 |
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Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N6759 |
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Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N6760 |
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Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N6760TXV |
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Hersteller: Harris Corporation
Description: 5.5A, 400V, 1OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-204AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: 5.5A, 400V, 1OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-204AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
36+ | 13.51 EUR |
2N6771 |
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Hersteller: Harris Corporation
Description: TRANS NPN 450V 1A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 40 W
Description: TRANS NPN 450V 1A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 40 W
auf Bestellung 2151 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
919+ | 0.53 EUR |
2N6773 |
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Hersteller: Harris Corporation
Description: TRANS NPN 650V 1A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 40 W
Description: TRANS NPN 650V 1A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 3V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 40 W
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
860+ | 0.60 EUR |
2N6786 |
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Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.25A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.25A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
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2N6792 |
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Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.25A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.25A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 10903 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
189+ | 2.57 EUR |
2N6792TX |
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Hersteller: Harris Corporation
Description: 2A, 400V, 1.8OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.25A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: 2A, 400V, 1.8OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.25A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
36+ | 13.73 EUR |
2N6895 |
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Hersteller: Harris Corporation
Description: P-CHANNEL, MOSFET
Description: P-CHANNEL, MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2N6968 |
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
66+ | 7.61 EUR |
2N6969 |
auf Bestellung 6612 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 13.68 EUR |
2N7224JANTXV |
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Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Description: NPN POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
3N206 |
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Hersteller: Harris Corporation
Description: RF MOSFET TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-72
Part Status: Active
Description: RF MOSFET TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Configuration: N-Channel Dual Gate
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-72
Part Status: Active
auf Bestellung 612 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 23.23 EUR |
4145591A |
Hersteller: Harris Corporation
Description: 4145591A
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: 4145591A
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
42MLA1206 |
Hersteller: Harris Corporation
Description: 42MLA1206
Description: 42MLA1206
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
50187J |
Hersteller: Harris Corporation
Description: 50187J - DUAL MARKED (CS82C5496)
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: 50187J - DUAL MARKED (CS82C5496)
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 8950 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
52+ | 9.47 EUR |