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RF1S9640 RF1S9640 Harris Corporation HRISSC89-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
231+2.11 EUR
Mindestbestellmenge: 231
RFA100N05E Harris Corporation HRISD017-4-778.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-218-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
auf Bestellung 1544 Stücke:
Lieferzeit 10-14 Tag (e)
58+8.4 EUR
Mindestbestellmenge: 58
RFAS15N06SM Harris Corporation Description: RFAS15N06SM
Produkt ist nicht verfügbar
RFB18N10CS Harris Corporation HRISD017-7-3.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 18A TO220AB-5
Packaging: Bulk
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-5
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
121+4.01 EUR
Mindestbestellmenge: 121
RFB18N10CSVM Harris Corporation INSLS10838-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFD10N05SM RFD10N05SM Harris Corporation TOCSS00198-1.pdf?t.download=true&u=5oefqw Description: 10A, 50V, N-CHANNEL,
auf Bestellung 11883 Stücke:
Lieferzeit 10-14 Tag (e)
489+1.01 EUR
Mindestbestellmenge: 489
RFD14N05S2515 Harris Corporation Description: MOSFET N-CH 50V 14A
Packaging: Bulk
Part Status: Active
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
900+0.56 EUR
Mindestbestellmenge: 900
RFD14N06 RFD14N06 Harris Corporation INSLS14930-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 3664 Stücke:
Lieferzeit 10-14 Tag (e)
485+1.02 EUR
Mindestbestellmenge: 485
RFD14N06LSM9A RFD14N06LSM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
807+0.61 EUR
Mindestbestellmenge: 807
RFD15N06LESM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Supplier Device Package: TO-252-3 (DPAK)
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 4077 Stücke:
Lieferzeit 10-14 Tag (e)
701+0.76 EUR
Mindestbestellmenge: 701
RFD15P06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFD16N02L Harris Corporation HRISS550-1.pdf?t.download=true&u=5oefqw Description: 16A, 20V, 0.022 OHM, N-CHANNEL L
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
auf Bestellung 1793 Stücke:
Lieferzeit 10-14 Tag (e)
606+0.88 EUR
Mindestbestellmenge: 606
RFD16N03LSM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Supplier Device Package: TO-252-3 (DPAK)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 2027 Stücke:
Lieferzeit 10-14 Tag (e)
289+1.83 EUR
Mindestbestellmenge: 289
RFD16N03LSM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 1540 Stücke:
Lieferzeit 10-14 Tag (e)
RFD16N05 RFD16N05 Harris Corporation FAIRS35810-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 50V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 17642 Stücke:
Lieferzeit 10-14 Tag (e)
300+1.61 EUR
Mindestbestellmenge: 300
RFD16N05L RFD16N05L Harris Corporation HRISD017-6-88.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250mA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 33102 Stücke:
Lieferzeit 10-14 Tag (e)
278+1.78 EUR
Mindestbestellmenge: 278
RFD16N05LSM RFD16N05LSM Harris Corporation FAIRS37307-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFD16N05SM9AS2480 Harris Corporation Description: 16A, 50V, 0.056OHM, N-CHANNEL,
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
566+0.97 EUR
Mindestbestellmenge: 566
RFD20N03 RFD20N03 Harris Corporation HRISSD05-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 10550 Stücke:
Lieferzeit 10-14 Tag (e)
740+0.68 EUR
Mindestbestellmenge: 740
RFD20N03SM RFD20N03SM Harris Corporation HRISSD05-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 8441 Stücke:
Lieferzeit 10-14 Tag (e)
701+0.7 EUR
Mindestbestellmenge: 701
RFD20N03SM9A RFD20N03SM9A Harris Corporation FAIRS43779-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 4911 Stücke:
Lieferzeit 10-14 Tag (e)
355+1.38 EUR
Mindestbestellmenge: 355
RFD20N03SM9AR4761 Harris Corporation Description: MOSFET N-CH 30V 20A
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
683+0.72 EUR
Mindestbestellmenge: 683
RFD3055RLESM9A Harris Corporation Description: 12A, 60V, 0.15OHM, N-CHANNEL,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFD3055SM9AS2479 RFD3055SM9AS2479 Harris Corporation Description: 12A, 60V, 0.15OHM, N-CHANNEL,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFD3N08L Harris Corporation HRISD017-9-3.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 5V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
951+0.56 EUR
Mindestbestellmenge: 951
RFD3N08LSM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3A, 5V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2425 Stücke:
Lieferzeit 10-14 Tag (e)
833+0.63 EUR
Mindestbestellmenge: 833
RFD4N06L Harris Corporation HRISD017-9-5.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 5V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 1424 Stücke:
Lieferzeit 10-14 Tag (e)
987+0.49 EUR
Mindestbestellmenge: 987
RFD7N10LE RFD7N10LE Harris Corporation HRISSE58-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7A, 5V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 5942 Stücke:
Lieferzeit 10-14 Tag (e)
606+0.81 EUR
Mindestbestellmenge: 606
RFD8P03LSM96 Harris Corporation Description: RFD8P03LSM96
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
392+1.29 EUR
Mindestbestellmenge: 392
RFD8P05SM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3179 Stücke:
Lieferzeit 10-14 Tag (e)
325+1.48 EUR
Mindestbestellmenge: 325
RFD8P05SM9AS2463 RFD8P05SM9AS2463 Harris Corporation Description: MOSFET P-CH 50V 8A
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
650+0.74 EUR
Mindestbestellmenge: 650
RFD8P06LE RFD8P06LE Harris Corporation HRISS694-1.pdf?t.download=true&u=5oefqw Description: 8A, 60V, 0.33OHM, P-CHANNEL POWE
Packaging: Bulk
Part Status: Active
auf Bestellung 1753 Stücke:
Lieferzeit 10-14 Tag (e)
919+0.53 EUR
Mindestbestellmenge: 919
RFF70N06/3 RFF70N06/3 Harris Corporation Description: MOSFET N-CH 60V 25A
Packaging: Bulk
Part Status: Active
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
6+84.12 EUR
Mindestbestellmenge: 6
RFG30P05 Harris Corporation HRISD017-5-187.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 1617 Stücke:
Lieferzeit 10-14 Tag (e)
116+4.56 EUR
Mindestbestellmenge: 116
RFG40N10 RFG40N10 Harris Corporation HRISS995-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
auf Bestellung 1260 Stücke:
Lieferzeit 10-14 Tag (e)
198+2.5 EUR
Mindestbestellmenge: 198
RFG40N10LE RFG40N10LE Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
247+2.01 EUR
Mindestbestellmenge: 247
RFG45N06 RFG45N06 Harris Corporation HRISD017-4-736.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 2175 Stücke:
Lieferzeit 10-14 Tag (e)
278+1.8 EUR
Mindestbestellmenge: 278
RFG45N06LE Harris Corporation HRISS078-1.pdf?t.download=true&u=5oefqw Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
RFG50N05 RFG50N05 Harris Corporation HRISD017-4-750.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250nA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
58+8.38 EUR
Mindestbestellmenge: 58
RFG50N06LE RFG50N06LE Harris Corporation HRISS01274-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
RFG75N05E Harris Corporation HRISD017-4-773.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 18695 Stücke:
Lieferzeit 10-14 Tag (e)
43+11.95 EUR
Mindestbestellmenge: 43
RFH10N50 Harris Corporation HRISD017-4-645.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
77+6.44 EUR
Mindestbestellmenge: 77
RFH30N12 Harris Corporation HRISD017-4-715.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
94+5.4 EUR
Mindestbestellmenge: 94
RFH30N15 Harris Corporation HRISD017-4-715.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 1417 Stücke:
Lieferzeit 10-14 Tag (e)
77+6.3 EUR
Mindestbestellmenge: 77
RFH45N05 Harris Corporation HRISD017-4-742.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFH75N05 Harris Corporation TOCSS00198-1.pdf?t.download=true&u=5oefqw Description: 75A, 50V, 0.008OHM, N-CHANNEL,
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
80+6.98 EUR
Mindestbestellmenge: 80
RFH75N05E Harris Corporation HRISD017-4-773.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFIS30P06 Harris Corporation Description: MOSFET P-CH 60V 30A
Packaging: Bulk
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
201+2.42 EUR
Mindestbestellmenge: 201
RFIS40N10LE RFIS40N10LE Harris Corporation Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
202+2.46 EUR
Mindestbestellmenge: 202
RFIS70N06SM Harris Corporation Description: MOSFET N-CH 60V 70A
Packaging: Bulk
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
214+2.25 EUR
Mindestbestellmenge: 214
RFL1N12 Harris Corporation HRISSD53-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
370+1.37 EUR
Mindestbestellmenge: 370
RFL1N15L RFL1N15L Harris Corporation HRISD017-6-23.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 1621 Stücke:
Lieferzeit 10-14 Tag (e)
180+2.83 EUR
Mindestbestellmenge: 180
RFL4N15 RFL4N15 Harris Corporation HRISD017-4-621.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 2A, 10V
Power Dissipation (Max): 8.33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
273+1.81 EUR
Mindestbestellmenge: 273
RFM10N15L Harris Corporation HRISD017-6-66.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFM10N45 Harris Corporation HRISD017-4-649.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
RFM10N50 Harris Corporation HRISD017-4-649.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
RFM12N10 Harris Corporation HRISD017-4-659.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Produkt ist nicht verfügbar
RFM12P08 Harris Corporation HRISD017-5-174.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
185+2.6 EUR
Mindestbestellmenge: 185
RFM12P10 Harris Corporation HRISD017-5-174.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
RFM15N05L Harris Corporation HRISD017-6-84.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RF1S9640 HRISSC89-1.pdf?t.download=true&u=5oefqw
RF1S9640
Hersteller: Harris Corporation
Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
231+2.11 EUR
Mindestbestellmenge: 231
RFA100N05E HRISD017-4-778.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-218-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
auf Bestellung 1544 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
58+8.4 EUR
Mindestbestellmenge: 58
RFAS15N06SM
Hersteller: Harris Corporation
Description: RFAS15N06SM
Produkt ist nicht verfügbar
RFB18N10CS HRISD017-7-3.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 18A TO220AB-5
Packaging: Bulk
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-5
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
121+4.01 EUR
Mindestbestellmenge: 121
RFB18N10CSVM INSLS10838-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFD10N05SM TOCSS00198-1.pdf?t.download=true&u=5oefqw
RFD10N05SM
Hersteller: Harris Corporation
Description: 10A, 50V, N-CHANNEL,
auf Bestellung 11883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
489+1.01 EUR
Mindestbestellmenge: 489
RFD14N05S2515
Hersteller: Harris Corporation
Description: MOSFET N-CH 50V 14A
Packaging: Bulk
Part Status: Active
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
900+0.56 EUR
Mindestbestellmenge: 900
RFD14N06 INSLS14930-1.pdf?t.download=true&u=5oefqw
RFD14N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 3664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
485+1.02 EUR
Mindestbestellmenge: 485
RFD14N06LSM9A HRISC016-2.pdf?t.download=true&u=5oefqw
RFD14N06LSM9A
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
807+0.61 EUR
Mindestbestellmenge: 807
RFD15N06LESM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Supplier Device Package: TO-252-3 (DPAK)
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 4077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
701+0.76 EUR
Mindestbestellmenge: 701
RFD15P06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFD16N02L HRISS550-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 16A, 20V, 0.022 OHM, N-CHANNEL L
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
auf Bestellung 1793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
606+0.88 EUR
Mindestbestellmenge: 606
RFD16N03LSM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Supplier Device Package: TO-252-3 (DPAK)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 2027 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
289+1.83 EUR
Mindestbestellmenge: 289
RFD16N03LSM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1540 Stücke:
Lieferzeit 10-14 Tag (e)
RFD16N05 FAIRS35810-1.pdf?t.download=true&u=5oefqw
RFD16N05
Hersteller: Harris Corporation
Description: MOSFET N-CH 50V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 17642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
300+1.61 EUR
Mindestbestellmenge: 300
RFD16N05L HRISD017-6-88.pdf?t.download=true&u=5oefqw
RFD16N05L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250mA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 33102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
278+1.78 EUR
Mindestbestellmenge: 278
RFD16N05LSM FAIRS37307-1.pdf?t.download=true&u=5oefqw
RFD16N05LSM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFD16N05SM9AS2480
Hersteller: Harris Corporation
Description: 16A, 50V, 0.056OHM, N-CHANNEL,
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
566+0.97 EUR
Mindestbestellmenge: 566
RFD20N03 HRISSD05-1.pdf?t.download=true&u=5oefqw
RFD20N03
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 10550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
740+0.68 EUR
Mindestbestellmenge: 740
RFD20N03SM HRISSD05-1.pdf?t.download=true&u=5oefqw
RFD20N03SM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 8441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
701+0.7 EUR
Mindestbestellmenge: 701
RFD20N03SM9A FAIRS43779-1.pdf?t.download=true&u=5oefqw
RFD20N03SM9A
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 4911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
355+1.38 EUR
Mindestbestellmenge: 355
RFD20N03SM9AR4761
Hersteller: Harris Corporation
Description: MOSFET N-CH 30V 20A
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
683+0.72 EUR
Mindestbestellmenge: 683
RFD3055RLESM9A
Hersteller: Harris Corporation
Description: 12A, 60V, 0.15OHM, N-CHANNEL,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFD3055SM9AS2479
RFD3055SM9AS2479
Hersteller: Harris Corporation
Description: 12A, 60V, 0.15OHM, N-CHANNEL,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFD3N08L HRISD017-9-3.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 5V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
951+0.56 EUR
Mindestbestellmenge: 951
RFD3N08LSM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3A, 5V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-3 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
833+0.63 EUR
Mindestbestellmenge: 833
RFD4N06L HRISD017-9-5.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 5V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 1424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
987+0.49 EUR
Mindestbestellmenge: 987
RFD7N10LE HRISSE58-1.pdf?t.download=true&u=5oefqw
RFD7N10LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7A, 5V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 5942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
606+0.81 EUR
Mindestbestellmenge: 606
RFD8P03LSM96
Hersteller: Harris Corporation
Description: RFD8P03LSM96
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
392+1.29 EUR
Mindestbestellmenge: 392
RFD8P05SM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3179 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
325+1.48 EUR
Mindestbestellmenge: 325
RFD8P05SM9AS2463
RFD8P05SM9AS2463
Hersteller: Harris Corporation
Description: MOSFET P-CH 50V 8A
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
650+0.74 EUR
Mindestbestellmenge: 650
RFD8P06LE HRISS694-1.pdf?t.download=true&u=5oefqw
RFD8P06LE
Hersteller: Harris Corporation
Description: 8A, 60V, 0.33OHM, P-CHANNEL POWE
Packaging: Bulk
Part Status: Active
auf Bestellung 1753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
919+0.53 EUR
Mindestbestellmenge: 919
RFF70N06/3
RFF70N06/3
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 25A
Packaging: Bulk
Part Status: Active
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+84.12 EUR
Mindestbestellmenge: 6
RFG30P05 HRISD017-5-187.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 1617 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
116+4.56 EUR
Mindestbestellmenge: 116
RFG40N10 HRISS995-1.pdf?t.download=true&u=5oefqw
RFG40N10
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
auf Bestellung 1260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
198+2.5 EUR
Mindestbestellmenge: 198
RFG40N10LE
RFG40N10LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
247+2.01 EUR
Mindestbestellmenge: 247
RFG45N06 HRISD017-4-736.pdf?t.download=true&u=5oefqw
RFG45N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 2175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
278+1.8 EUR
Mindestbestellmenge: 278
RFG45N06LE HRISS078-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
RFG50N05 HRISD017-4-750.pdf?t.download=true&u=5oefqw
RFG50N05
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250nA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
58+8.38 EUR
Mindestbestellmenge: 58
RFG50N06LE HRISS01274-1.pdf?t.download=true&u=5oefqw
RFG50N06LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
RFG75N05E HRISD017-4-773.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 18695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
43+11.95 EUR
Mindestbestellmenge: 43
RFH10N50 HRISD017-4-645.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
77+6.44 EUR
Mindestbestellmenge: 77
RFH30N12 HRISD017-4-715.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
94+5.4 EUR
Mindestbestellmenge: 94
RFH30N15 HRISD017-4-715.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 1417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
77+6.3 EUR
Mindestbestellmenge: 77
RFH45N05 HRISD017-4-742.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFH75N05 TOCSS00198-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 75A, 50V, 0.008OHM, N-CHANNEL,
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
80+6.98 EUR
Mindestbestellmenge: 80
RFH75N05E HRISD017-4-773.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFIS30P06
Hersteller: Harris Corporation
Description: MOSFET P-CH 60V 30A
Packaging: Bulk
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
201+2.42 EUR
Mindestbestellmenge: 201
RFIS40N10LE
RFIS40N10LE
Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
202+2.46 EUR
Mindestbestellmenge: 202
RFIS70N06SM
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 70A
Packaging: Bulk
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
214+2.25 EUR
Mindestbestellmenge: 214
RFL1N12 HRISSD53-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
370+1.37 EUR
Mindestbestellmenge: 370
RFL1N15L HRISD017-6-23.pdf?t.download=true&u=5oefqw
RFL1N15L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1621 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
180+2.83 EUR
Mindestbestellmenge: 180
RFL4N15 HRISD017-4-621.pdf?t.download=true&u=5oefqw
RFL4N15
Hersteller: Harris Corporation
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 2A, 10V
Power Dissipation (Max): 8.33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
273+1.81 EUR
Mindestbestellmenge: 273
RFM10N15L HRISD017-6-66.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFM10N45 HRISD017-4-649.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
RFM10N50 HRISD017-4-649.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
RFM12N10 HRISD017-4-659.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Produkt ist nicht verfügbar
RFM12P08 HRISD017-5-174.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
185+2.6 EUR
Mindestbestellmenge: 185
RFM12P10 HRISD017-5-174.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
RFM15N05L HRISD017-6-84.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
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