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IM6654-1IJG IM6654-1IJG Harris Corporation HRISD004-6-268.pdf?t.download=true&u=5oefqw Description: IC EPROM 4KBIT PARALLEL 24CERDIP
Packaging: Bulk
Package / Case: 24-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 24-CERDIP
Part Status: Active
Memory Interface: Parallel
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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IM6654IJG IM6654IJG Harris Corporation RE_DSHEET_IM6654AIJG_REI.pdf?t.download=true&u=5oefqw Description: IC EPROM 4KBIT PARALLEL 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 24-CDIP
Part Status: Active
Memory Interface: Parallel
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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IP80C86 IP80C86 Harris Corporation HRISS589-1.pdf?t.download=true&u=5oefqw Description: IC MPU 5MHZ 40DIP
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C86
Voltage - I/O: 5V
Supplier Device Package: 40-PDIP
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Produkt ist nicht verfügbar
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IP80C86-2 Harris Corporation HRISS589-1.pdf?t.download=true&u=5oefqw Description: IC MPU 8MHZ 40DIP
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 8MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C86
Voltage - I/O: 5V
Supplier Device Package: 40-PDIP
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Produkt ist nicht verfügbar
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IP80C88 IP80C88 Harris Corporation INSLS08211-1.pdf?t.download=true&u=5oefqw Description: IC MPU 5MHZ 40DIP
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C88
Voltage - I/O: 5V
Supplier Device Package: 40-PDIP
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Part Status: Active
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IP80C88S2064 IP80C88S2064 Harris Corporation INSLS08211-1.pdf?t.download=true&u=5oefqw Description: 80C88- MICROPROCESSOR, 8/16 BIT,
Packaging: Bulk
Part Status: Active
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IP82C37A IP82C37A Harris Corporation HRISS599-1.pdf?t.download=true&u=5oefqw Description: CMOS HIGH PERFORMANCE PROGRAMMAB
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Interface: CMOS
Voltage - Supply: 4.5V ~ 5.5V
Applications: CMOS DMA Controller
Supplier Device Package: 40-PDIP
Part Status: Active
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IP82C37A-12 IP82C37A-12 Harris Corporation HRISS599-1.pdf?t.download=true&u=5oefqw Description: PROGRAMMABLE DMA CONTROLLER
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Interface: CMOS
Voltage - Supply: 4.5V ~ 5.5V
Applications: CMOS DMA Controller
Supplier Device Package: 40-PDIP
Part Status: Active
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IP82C37A-5 IP82C37A-5 Harris Corporation HRISS599-1.pdf?t.download=true&u=5oefqw Description: PROGRAMMABLE DMA CONTROLLER
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Interface: CMOS
Voltage - Supply: 4.5V ~ 5.5V
Applications: CMOS DMA Controller
Supplier Device Package: 40-PDIP
Part Status: Active
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IP82C52 Harris Corporation INSL-S-A0001409332-1.pdf?t.download=true&u=5oefqw Description: SERIAL I/O CONTROLLER, 1 CHANNEL
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Number of Channels: 1, UART
Mounting Type: Through Hole
Voltage - Supply: 4.5V ~ 5.5V
Protocol: RS232
Data Rate (Max): 1MBaud
Supplier Device Package: 28-PDIP
With Auto Flow Control: No
With IrDA Encoder/Decoder: No
With False Start Bit Detection: Yes
With Modem Control: Yes
Part Status: Active
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IP82C54-10S5001 Harris Corporation Description: CMOS PROGRAMMABLE INTERVAL TIMER
Packaging: Bulk
Part Status: Active
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IP82C55A-5 IP82C55A-5 Harris Corporation HRISS601-1.pdf?t.download=true&u=5oefqw Description: IC XPNDR 8MHZ 40DIP
Packaging: Bulk
Features: ADC, DAC, Direct Bit Set/Reset
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Number of I/O: 24
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Clock Frequency: 8 MHz
Interrupt Output: Yes
Supplier Device Package: 40-PDIP
Current - Output Source/Sink: 2.5mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IP82C55AS2064 IP82C55AS2064 Harris Corporation Description: CMOS PROGRAMMABLE PERIPHERAL INT
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IP82C55AS2065 Harris Corporation Description: CMOS PROGRAMMABLE PERIPHERAL INT
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IP82C55AX121 IP82C55AX121 Harris Corporation Description: CMOS PROGRAMMABLE PERIPHERAL INT
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IP82C59A-10 IP82C59A-10 Harris Corporation HRISS578-1.pdf?t.download=true&u=5oefqw Description: PRIORITY INTERRUPT CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Interface: System Bus
Voltage - Supply: 4.5V ~ 5.5V
Applications: Controller
Supplier Device Package: 28-PDIP
Part Status: Active
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IP82C59A-5 IP82C59A-5 Harris Corporation HRISS578-1.pdf?t.download=true&u=5oefqw Description: PRIORITY INTERRUPT CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Interface: System Bus
Voltage - Supply: 4.5V ~ 5.5V
Applications: Controller
Supplier Device Package: 28-PDIP
Part Status: Active
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IP82C82 IP82C82 Harris Corporation HRISS605-1.pdf?t.download=true&u=5oefqw Description: CMOS OCTAL LATCHING BUS DRIVER
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IP82C86H-5 IP82C86H-5 Harris Corporation HRISS607-1.pdf?t.download=true&u=5oefqw Description: OCTAL BUS TRANSCEIVER
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IP82C88 IP82C88 Harris Corporation HRISS609-1.pdf?t.download=true&u=5oefqw Description: CMOS BUS CONTROLLER
Packaging: Bulk
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Bus Controller
Supplier Device Package: 20-PDIP
Part Status: Active
Produkt ist nicht verfügbar
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IP82C89 IP82C89 Harris Corporation HRISS610-1.pdf?t.download=true&u=5oefqw Description: CMOS BUS ARBITER
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IRF120 IRF120 Harris Corporation HRISS989-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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IRF121-0001 IRF121-0001 Harris Corporation HRISS989-1.pdf?t.download=true&u=5oefqw Description: 9.2A, 80V, 0.27OHM, N CHANNEL MO
Packaging: Bulk
Part Status: Active
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IRF151 Harris Corporation HRISS994-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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IRF214 Harris Corporation Description: IRF214
Packaging: Bulk
Produkt ist nicht verfügbar
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IRF223 IRF223 Harris Corporation HRISS991-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Produkt ist nicht verfügbar
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IRF230 IRF230 Harris Corporation HRISS992-1.pdf?t.download=true&u=5oefqw description Description: MOSFET N-CH 200V 9A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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IRF231 IRF231 Harris Corporation HRISS992-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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IRF232 Harris Corporation HRISS992-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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IRF233 IRF233 Harris Corporation HRISS992-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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IRF244 IRF244 Harris Corporation HRISSD77-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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IRF331 IRF331 Harris Corporation HRISSD59-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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IRF341 IRF341 Harris Corporation HRISD017-4-236.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
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IRF351 IRF351 Harris Corporation HRISD017-4-241.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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IRF353 IRF353 Harris Corporation HRISD017-4-241.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
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IRF433 Harris Corporation HRISSA12-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Power Dissipation (Max): 75W
Supplier Device Package: TO-3
Part Status: Active
Drain to Source Voltage (Vdss): 450 V
Produkt ist nicht verfügbar
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IRF442 IRF442 Harris Corporation HRISD017-4-261.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 4.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF442119U IRF442119U Harris Corporation Description: 7A, 500V, 1.1OHM, N-CHANNEL,
Packaging: Bulk
Part Status: Active
auf Bestellung 1841 Stücke:
Lieferzeit 10-14 Tag (e)
168+2.72 EUR
Mindestbestellmenge: 168
Im Einkaufswagen  Stück im Wert von  UAH
IRF453 Harris Corporation HRISSA17-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF512 IRF512 Harris Corporation HRISSD61-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 3.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
auf Bestellung 263 Stücke:
Lieferzeit 10-14 Tag (e)
263+1.72 EUR
Mindestbestellmenge: 263
Im Einkaufswagen  Stück im Wert von  UAH
IRF512S2532 IRF512S2532 Harris Corporation HRISSD61-1.pdf?t.download=true&u=5oefqw Description: 4.9A, 100V, 0.74 OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
790+0.57 EUR
Mindestbestellmenge: 790
Im Einkaufswagen  Stück im Wert von  UAH
IRF521 IRF521 Harris Corporation HRISSA13-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 25969 Stücke:
Lieferzeit 10-14 Tag (e)
330+1.37 EUR
Mindestbestellmenge: 330
Im Einkaufswagen  Stück im Wert von  UAH
IRF523 IRF523 Harris Corporation HRISSA13-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 2608 Stücke:
Lieferzeit 10-14 Tag (e)
568+0.8 EUR
Mindestbestellmenge: 568
Im Einkaufswagen  Stück im Wert von  UAH
IRF532 IRF532 Harris Corporation HRISD017-4-286.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 8.3A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF540P2 IRF540P2 Harris Corporation Description: 28A, 100V, 0.077 OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF540RP2 IRF540RP2 Harris Corporation Description: 28A, 100V, 0.077 OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF541 IRF541 Harris Corporation IRF542.pdf Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 4100 Stücke:
Lieferzeit 10-14 Tag (e)
168+2.7 EUR
Mindestbestellmenge: 168
Im Einkaufswagen  Stück im Wert von  UAH
IRF542 IRF542 Harris Corporation IRF542.pdf Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 7504 Stücke:
Lieferzeit 10-14 Tag (e)
164+2.76 EUR
Mindestbestellmenge: 164
Im Einkaufswagen  Stück im Wert von  UAH
IRF543 IRF543 Harris Corporation IRF542.pdf Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)
267+1.69 EUR
Mindestbestellmenge: 267
Im Einkaufswagen  Stück im Wert von  UAH
IRF610S2497 IRF610S2497 Harris Corporation HRISSA14-1.pdf?t.download=true&u=5oefqw Description: 3.3A 200V 1.500 OHM N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
1050+0.42 EUR
Mindestbestellmenge: 1050
Im Einkaufswagen  Stück im Wert von  UAH
IRF611 Harris Corporation HRISSA14-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF612 Harris Corporation HRISSA14-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF613 IRF613 Harris Corporation HRISSA14-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
919+0.54 EUR
Mindestbestellmenge: 919
Im Einkaufswagen  Stück im Wert von  UAH
IRF614 IRF614 Harris Corporation HRISSD97-1.pdf?t.download=true&u=5oefqw Description: ADVANCED POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)
695+0.88 EUR
Mindestbestellmenge: 695
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IRF620R4587 IRF620R4587 Harris Corporation HRISSD62-1.pdf?t.download=true&u=5oefqw Description: 5.0A 200V 0.800 OHM N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 1197 Stücke:
Lieferzeit 10-14 Tag (e)
699+0.65 EUR
Mindestbestellmenge: 699
Im Einkaufswagen  Stück im Wert von  UAH
IRF621 IRF621 Harris Corporation HRISSD62-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 13575 Stücke:
Lieferzeit 10-14 Tag (e)
478+0.96 EUR
Mindestbestellmenge: 478
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IRF621R IRF621R Harris Corporation HRISD017-4-306.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 6837 Stücke:
Lieferzeit 10-14 Tag (e)
478+0.96 EUR
Mindestbestellmenge: 478
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IRF623R IRF623R Harris Corporation HRISD017-4-306.pdf?t.download=true&u=5oefqw Description: 4A, 150V, 1.2OHM, N-CHANNEL MOSF
Packaging: Bulk
Part Status: Active
auf Bestellung 1299 Stücke:
Lieferzeit 10-14 Tag (e)
722+0.74 EUR
Mindestbestellmenge: 722
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IRF626 IRF626 Harris Corporation HRISD017-4-311.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 1.4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 275 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
356+1.28 EUR
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IRF630 IRF630 Harris Corporation HRISD017-4-316.pdf?t.download=true&u=5oefqw description Description: MOSFET N-CH 200V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 22729 Stücke:
Lieferzeit 10-14 Tag (e)
241+1.9 EUR
Mindestbestellmenge: 241
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IM6654-1IJG HRISD004-6-268.pdf?t.download=true&u=5oefqw
IM6654-1IJG
Hersteller: Harris Corporation
Description: IC EPROM 4KBIT PARALLEL 24CERDIP
Packaging: Bulk
Package / Case: 24-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 24-CERDIP
Part Status: Active
Memory Interface: Parallel
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 1035 Stücke:
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Anzahl Preis
32+16.79 EUR
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IM6654IJG RE_DSHEET_IM6654AIJG_REI.pdf?t.download=true&u=5oefqw
IM6654IJG
Hersteller: Harris Corporation
Description: IC EPROM 4KBIT PARALLEL 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 24-CDIP
Part Status: Active
Memory Interface: Parallel
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 15914 Stücke:
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Anzahl Preis
21+25.56 EUR
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IP80C86 HRISS589-1.pdf?t.download=true&u=5oefqw
IP80C86
Hersteller: Harris Corporation
Description: IC MPU 5MHZ 40DIP
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C86
Voltage - I/O: 5V
Supplier Device Package: 40-PDIP
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Produkt ist nicht verfügbar
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IP80C86-2 HRISS589-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IC MPU 8MHZ 40DIP
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 8MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C86
Voltage - I/O: 5V
Supplier Device Package: 40-PDIP
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Produkt ist nicht verfügbar
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IP80C88 INSLS08211-1.pdf?t.download=true&u=5oefqw
IP80C88
Hersteller: Harris Corporation
Description: IC MPU 5MHZ 40DIP
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 5MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: 80C88
Voltage - I/O: 5V
Supplier Device Package: 40-PDIP
Number of Cores/Bus Width: 1 Core, 16-Bit
Graphics Acceleration: No
Part Status: Active
auf Bestellung 1822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+107.93 EUR
Mindestbestellmenge: 5
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IP80C88S2064 INSLS08211-1.pdf?t.download=true&u=5oefqw
IP80C88S2064
Hersteller: Harris Corporation
Description: 80C88- MICROPROCESSOR, 8/16 BIT,
Packaging: Bulk
Part Status: Active
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+17.45 EUR
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IP82C37A HRISS599-1.pdf?t.download=true&u=5oefqw
IP82C37A
Hersteller: Harris Corporation
Description: CMOS HIGH PERFORMANCE PROGRAMMAB
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Interface: CMOS
Voltage - Supply: 4.5V ~ 5.5V
Applications: CMOS DMA Controller
Supplier Device Package: 40-PDIP
Part Status: Active
auf Bestellung 339 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+34.08 EUR
Mindestbestellmenge: 15
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IP82C37A-12 HRISS599-1.pdf?t.download=true&u=5oefqw
IP82C37A-12
Hersteller: Harris Corporation
Description: PROGRAMMABLE DMA CONTROLLER
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Interface: CMOS
Voltage - Supply: 4.5V ~ 5.5V
Applications: CMOS DMA Controller
Supplier Device Package: 40-PDIP
Part Status: Active
auf Bestellung 83 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+28.24 EUR
Mindestbestellmenge: 18
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IP82C37A-5 HRISS599-1.pdf?t.download=true&u=5oefqw
IP82C37A-5
Hersteller: Harris Corporation
Description: PROGRAMMABLE DMA CONTROLLER
Packaging: Bulk
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Interface: CMOS
Voltage - Supply: 4.5V ~ 5.5V
Applications: CMOS DMA Controller
Supplier Device Package: 40-PDIP
Part Status: Active
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+24.53 EUR
Mindestbestellmenge: 21
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IP82C52 INSL-S-A0001409332-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: SERIAL I/O CONTROLLER, 1 CHANNEL
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Number of Channels: 1, UART
Mounting Type: Through Hole
Voltage - Supply: 4.5V ~ 5.5V
Protocol: RS232
Data Rate (Max): 1MBaud
Supplier Device Package: 28-PDIP
With Auto Flow Control: No
With IrDA Encoder/Decoder: No
With False Start Bit Detection: Yes
With Modem Control: Yes
Part Status: Active
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+226.32 EUR
Mindestbestellmenge: 3
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IP82C54-10S5001
Hersteller: Harris Corporation
Description: CMOS PROGRAMMABLE INTERVAL TIMER
Packaging: Bulk
Part Status: Active
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+16.53 EUR
Mindestbestellmenge: 30
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IP82C55A-5 HRISS601-1.pdf?t.download=true&u=5oefqw
IP82C55A-5
Hersteller: Harris Corporation
Description: IC XPNDR 8MHZ 40DIP
Packaging: Bulk
Features: ADC, DAC, Direct Bit Set/Reset
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Number of I/O: 24
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Clock Frequency: 8 MHz
Interrupt Output: Yes
Supplier Device Package: 40-PDIP
Current - Output Source/Sink: 2.5mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IP82C55AS2064
IP82C55AS2064
Hersteller: Harris Corporation
Description: CMOS PROGRAMMABLE PERIPHERAL INT
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IP82C55AS2065
Hersteller: Harris Corporation
Description: CMOS PROGRAMMABLE PERIPHERAL INT
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IP82C55AX121
IP82C55AX121
Hersteller: Harris Corporation
Description: CMOS PROGRAMMABLE PERIPHERAL INT
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IP82C59A-10 HRISS578-1.pdf?t.download=true&u=5oefqw
IP82C59A-10
Hersteller: Harris Corporation
Description: PRIORITY INTERRUPT CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Interface: System Bus
Voltage - Supply: 4.5V ~ 5.5V
Applications: Controller
Supplier Device Package: 28-PDIP
Part Status: Active
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
70+7.22 EUR
Mindestbestellmenge: 70
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IP82C59A-5 HRISS578-1.pdf?t.download=true&u=5oefqw
IP82C59A-5
Hersteller: Harris Corporation
Description: PRIORITY INTERRUPT CONTROLLER
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Interface: System Bus
Voltage - Supply: 4.5V ~ 5.5V
Applications: Controller
Supplier Device Package: 28-PDIP
Part Status: Active
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+7.04 EUR
Mindestbestellmenge: 84
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IP82C82 HRISS605-1.pdf?t.download=true&u=5oefqw
IP82C82
Hersteller: Harris Corporation
Description: CMOS OCTAL LATCHING BUS DRIVER
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
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IP82C86H-5 HRISS607-1.pdf?t.download=true&u=5oefqw
IP82C86H-5
Hersteller: Harris Corporation
Description: OCTAL BUS TRANSCEIVER
auf Bestellung 1187 Stücke:
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IP82C88 HRISS609-1.pdf?t.download=true&u=5oefqw
IP82C88
Hersteller: Harris Corporation
Description: CMOS BUS CONTROLLER
Packaging: Bulk
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Bus Controller
Supplier Device Package: 20-PDIP
Part Status: Active
Produkt ist nicht verfügbar
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IP82C89 HRISS610-1.pdf?t.download=true&u=5oefqw
IP82C89
Hersteller: Harris Corporation
Description: CMOS BUS ARBITER
auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)
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IRF120 HRISS989-1.pdf?t.download=true&u=5oefqw
IRF120
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
133+3.41 EUR
Mindestbestellmenge: 133
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IRF121-0001 HRISS989-1.pdf?t.download=true&u=5oefqw
IRF121-0001
Hersteller: Harris Corporation
Description: 9.2A, 80V, 0.27OHM, N CHANNEL MO
Packaging: Bulk
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
312+1.49 EUR
Mindestbestellmenge: 312
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IRF151 HRISS994-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
177+2.8 EUR
Mindestbestellmenge: 177
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IRF214
Hersteller: Harris Corporation
Description: IRF214
Packaging: Bulk
Produkt ist nicht verfügbar
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IRF223 HRISS991-1.pdf?t.download=true&u=5oefqw
IRF223
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Produkt ist nicht verfügbar
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IRF230 description HRISS992-1.pdf?t.download=true&u=5oefqw
IRF230
Hersteller: Harris Corporation
Description: MOSFET N-CH 200V 9A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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IRF231 HRISS992-1.pdf?t.download=true&u=5oefqw
IRF231
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
372+1.54 EUR
Mindestbestellmenge: 372
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IRF232 HRISS992-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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IRF233 HRISS992-1.pdf?t.download=true&u=5oefqw
IRF233
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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IRF244 HRISSD77-1.pdf?t.download=true&u=5oefqw
IRF244
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 38768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
82+5.5 EUR
Mindestbestellmenge: 82
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IRF331 HRISSD59-1.pdf?t.download=true&u=5oefqw
IRF331
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 2691 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+4.06 EUR
Mindestbestellmenge: 112
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IRF341 HRISD017-4-236.pdf?t.download=true&u=5oefqw
IRF341
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
auf Bestellung 3034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
169+2.69 EUR
Mindestbestellmenge: 169
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IRF351 HRISD017-4-241.pdf?t.download=true&u=5oefqw
IRF351
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
139+3.39 EUR
Mindestbestellmenge: 139
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IRF353 HRISD017-4-241.pdf?t.download=true&u=5oefqw
IRF353
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
62+7.37 EUR
Mindestbestellmenge: 62
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IRF433 HRISSA12-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Power Dissipation (Max): 75W
Supplier Device Package: TO-3
Part Status: Active
Drain to Source Voltage (Vdss): 450 V
Produkt ist nicht verfügbar
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IRF442 HRISD017-4-261.pdf?t.download=true&u=5oefqw
IRF442
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 4.4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 25 V
Produkt ist nicht verfügbar
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IRF442119U
IRF442119U
Hersteller: Harris Corporation
Description: 7A, 500V, 1.1OHM, N-CHANNEL,
Packaging: Bulk
Part Status: Active
auf Bestellung 1841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
168+2.72 EUR
Mindestbestellmenge: 168
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IRF453 HRISSA17-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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IRF512 HRISSD61-1.pdf?t.download=true&u=5oefqw
IRF512
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 3.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
auf Bestellung 263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
263+1.72 EUR
Mindestbestellmenge: 263
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IRF512S2532 HRISSD61-1.pdf?t.download=true&u=5oefqw
IRF512S2532
Hersteller: Harris Corporation
Description: 4.9A, 100V, 0.74 OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
790+0.57 EUR
Mindestbestellmenge: 790
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IRF521 HRISSA13-1.pdf?t.download=true&u=5oefqw
IRF521
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 25969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
330+1.37 EUR
Mindestbestellmenge: 330
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IRF523 HRISSA13-1.pdf?t.download=true&u=5oefqw
IRF523
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 2608 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
568+0.8 EUR
Mindestbestellmenge: 568
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IRF532 HRISD017-4-286.pdf?t.download=true&u=5oefqw
IRF532
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 8.3A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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IRF540P2
IRF540P2
Hersteller: Harris Corporation
Description: 28A, 100V, 0.077 OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF540RP2
IRF540RP2
Hersteller: Harris Corporation
Description: 28A, 100V, 0.077 OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF541 IRF542.pdf
IRF541
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 4100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
168+2.7 EUR
Mindestbestellmenge: 168
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IRF542 IRF542.pdf
IRF542
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 7504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
164+2.76 EUR
Mindestbestellmenge: 164
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IRF543 IRF542.pdf
IRF543
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
267+1.69 EUR
Mindestbestellmenge: 267
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IRF610S2497 HRISSA14-1.pdf?t.download=true&u=5oefqw
IRF610S2497
Hersteller: Harris Corporation
Description: 3.3A 200V 1.500 OHM N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1050+0.42 EUR
Mindestbestellmenge: 1050
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IRF611 HRISSA14-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Produkt ist nicht verfügbar
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IRF612 HRISSA14-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF613 HRISSA14-1.pdf?t.download=true&u=5oefqw
IRF613
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
919+0.54 EUR
Mindestbestellmenge: 919
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IRF614 HRISSD97-1.pdf?t.download=true&u=5oefqw
IRF614
Hersteller: Harris Corporation
Description: ADVANCED POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
695+0.88 EUR
Mindestbestellmenge: 695
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IRF620R4587 HRISSD62-1.pdf?t.download=true&u=5oefqw
IRF620R4587
Hersteller: Harris Corporation
Description: 5.0A 200V 0.800 OHM N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 1197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
699+0.65 EUR
Mindestbestellmenge: 699
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IRF621 HRISSD62-1.pdf?t.download=true&u=5oefqw
IRF621
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 13575 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
478+0.96 EUR
Mindestbestellmenge: 478
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IRF621R HRISD017-4-306.pdf?t.download=true&u=5oefqw
IRF621R
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 6837 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
478+0.96 EUR
Mindestbestellmenge: 478
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IRF623R HRISD017-4-306.pdf?t.download=true&u=5oefqw
IRF623R
Hersteller: Harris Corporation
Description: 4A, 150V, 1.2OHM, N-CHANNEL MOSF
Packaging: Bulk
Part Status: Active
auf Bestellung 1299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
722+0.74 EUR
Mindestbestellmenge: 722
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IRF626 HRISD017-4-311.pdf?t.download=true&u=5oefqw
IRF626
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 1.4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 275 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
356+1.28 EUR
Mindestbestellmenge: 356
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IRF630 description HRISD017-4-316.pdf?t.download=true&u=5oefqw
IRF630
Hersteller: Harris Corporation
Description: MOSFET N-CH 200V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 22729 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
241+1.9 EUR
Mindestbestellmenge: 241
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