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RCA1A05 RCA1A05 Harris Corporation Description: PNP POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1A09 RCA1A09 Harris Corporation Description: NPN POWER TRANSISTOR
Packaging: Bulk
auf Bestellung 1305 Stücke:
Lieferzeit 10-14 Tag (e)
533+0.91 EUR
Mindestbestellmenge: 533
RCA1A18 RCA1A18 Harris Corporation Description: NPN POWER TRANSISTOR
Packaging: Bulk
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
468+1.04 EUR
Mindestbestellmenge: 468
RCA1C03 RCA1C03 Harris Corporation Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1C04 RCA1C04 Harris Corporation Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1C13 RCA1C13 Harris Corporation Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA3055 Harris Corporation INSLS12267-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 60V 15A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 400mA, 4A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Produkt ist nicht verfügbar
RCA8766 Harris Corporation INSLS10590-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN DARL 350V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 6A, 3V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
Produkt ist nicht verfügbar
RCA9116E RCA9116E Harris Corporation HRISD005-2-173.pdf?t.download=true&u=5oefqw Description: TRANS PNP 100V 200A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 750mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 7.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 W
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)
207+2.44 EUR
Mindestbestellmenge: 207
RCA9166A RCA9166A Harris Corporation INSLS12268-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 250V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 3126 Stücke:
Lieferzeit 10-14 Tag (e)
115+4.24 EUR
Mindestbestellmenge: 115
RCD4001AK3 Harris Corporation Description: IC GATE NOR QUAD 2-INP
Packaging: Bulk
Part Status: Active
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
12+41.81 EUR
Mindestbestellmenge: 12
RCH10N50A Harris Corporation Description: RCH10N50A
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
RF1K49211 Harris Corporation HRISC016-4.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-SOIC
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
auf Bestellung 1588 Stücke:
Lieferzeit 10-14 Tag (e)
825+0.63 EUR
Mindestbestellmenge: 825
RF1K49223 RF1K49223 Harris Corporation HRISC016-4.pdf?t.download=true&u=5oefqw Description: DUAL P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 37842 Stücke:
Lieferzeit 10-14 Tag (e)
381+1.39 EUR
Mindestbestellmenge: 381
RF1S15N06 RF1S15N06 Harris Corporation Description: DISCRETE ,LOGIC LEVEL GATE (5V),
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
566+0.88 EUR
Mindestbestellmenge: 566
RF1S15N06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
592+0.83 EUR
Mindestbestellmenge: 592
RF1S15N08L Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: LOGIC LEVEL GATE (5V) DEVICE
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
498+1.07 EUR
Mindestbestellmenge: 498
RF1S17N06L RF1S17N06L Harris Corporation Description: DISCRETE ,LOGIC LEVEL GATE (5V),
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
451+1.14 EUR
Mindestbestellmenge: 451
RF1S17N06LSM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: LOGIC LEVEL GATE (5V) DEVICE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
498+1.02 EUR
Mindestbestellmenge: 498
RF1S22N10 Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
342+1.47 EUR
Mindestbestellmenge: 342
RF1S22N10SM RF1S22N10SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 3853 Stücke:
Lieferzeit 10-14 Tag (e)
381+1.32 EUR
Mindestbestellmenge: 381
RF1S23N06LE RF1S23N06LE Harris Corporation INSLS12758-1.pdf?t.download=true&u=5oefqw Description: 23A, 60V, 0.065OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
423+1.19 EUR
Mindestbestellmenge: 423
RF1S23N06LESM RF1S23N06LESM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 5549 Stücke:
Lieferzeit 10-14 Tag (e)
468+1.07 EUR
Mindestbestellmenge: 468
RF1S23N06LESM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
437+1.15 EUR
Mindestbestellmenge: 437
RF1S25N06 Harris Corporation HRISS981-1.pdf?t.download=true&u=5oefqw Description: 25A, 60V, 0.047 OHM, N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 25A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V
Produkt ist nicht verfügbar
RF1S25N06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 3005 Stücke:
Lieferzeit 10-14 Tag (e)
460+1.07 EUR
Mindestbestellmenge: 460
RF1S25N06SM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
437+1.14 EUR
Mindestbestellmenge: 437
RF1S25N06SMR4643 Harris Corporation Description: MOSFET N-CH 60V 25A
Packaging: Bulk
Part Status: Active
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
460+1.07 EUR
Mindestbestellmenge: 460
RF1S30N06LE Harris Corporation Description: MOSFET N-CH 60V 30A
Packaging: Bulk
Part Status: Active
auf Bestellung 1848 Stücke:
Lieferzeit 10-14 Tag (e)
381+1.3 EUR
Mindestbestellmenge: 381
RF1S30N06LESM9A RF1S30N06LESM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RF1S30P05 RF1S30P05 Harris Corporation Description: 30A, 50V, 0.065OHM, P-CHANNEL,
Packaging: Bulk
Part Status: Active
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
370+1.43 EUR
Mindestbestellmenge: 370
RF1S30P06 Harris Corporation Description: 30A, 60V, 0.065OHM, P-CHANNEL,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RF1S30P06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RF1S30P06SM9A RF1S30P06SM9A Harris Corporation FAIRS43770-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RF1S40N10LE RF1S40N10LE Harris Corporation Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 2006 Stücke:
Lieferzeit 10-14 Tag (e)
211+2.34 EUR
Mindestbestellmenge: 211
RF1S40N10SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
210+2.37 EUR
Mindestbestellmenge: 210
RF1S42N03L Harris Corporation HRISS497-1.pdf?t.download=true&u=5oefqw Description: 42A, 30V, 0.025 OHMS, N-CHANNEL
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
400+1.36 EUR
Mindestbestellmenge: 400
RF1S45N02L RF1S45N02L Harris Corporation HRISS551-1.pdf?t.download=true&u=5oefqw Description: 45A, 20V, 0.022OHM, N-CHANNEL LO
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
533+0.92 EUR
Mindestbestellmenge: 533
RF1S45N02LSM RF1S45N02LSM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
592+0.84 EUR
Mindestbestellmenge: 592
RF1S45N02LSM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
579+0.86 EUR
Mindestbestellmenge: 579
RF1S45N03L RF1S45N03L Harris Corporation INSLS18395-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
333+1.46 EUR
Mindestbestellmenge: 333
RF1S45N06LE RF1S45N06LE Harris Corporation HRISS078-1.pdf?t.download=true&u=5oefqw Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
310+1.62 EUR
Mindestbestellmenge: 310
RF1S45N06LESM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 843 Stücke:
Lieferzeit 10-14 Tag (e)
310+1.62 EUR
Mindestbestellmenge: 310
RF1S45N06LESM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
317+1.59 EUR
Mindestbestellmenge: 317
RF1S45N06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
325+1.54 EUR
Mindestbestellmenge: 325
RF1S4N100SM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 1000V 4.3A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
89+5.49 EUR
Mindestbestellmenge: 89
RF1S50N06 RF1S50N06 Harris Corporation HRISS983-1.pdf?t.download=true&u=5oefqw Description: 50A, 60V, 0.022 OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
auf Bestellung 4317 Stücke:
Lieferzeit 10-14 Tag (e)
RF1S50N06LE Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 5642 Stücke:
Lieferzeit 10-14 Tag (e)
RF1S50N06LESM Harris Corporation HRISS01274-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 2277 Stücke:
Lieferzeit 10-14 Tag (e)
RF1S50N06SM9AS2551 Harris Corporation HRISS01274-1.pdf?t.download=true&u=5oefqw Description: MOSFET 60V 50A
Packaging: Bulk
Part Status: Active
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
RF1S540 Harris Corporation HRISSA21-1.pdf?t.download=true&u=5oefqw Description: 28A, 100V, 0.077 OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 4101 Stücke:
Lieferzeit 10-14 Tag (e)
249+2.13 EUR
Mindestbestellmenge: 249
RF1S630SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 2098 Stücke:
Lieferzeit 10-14 Tag (e)
RF1S630SM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
301+1.76 EUR
Mindestbestellmenge: 301
RF1S640 Harris Corporation HRISSD64-1.pdf?t.download=true&u=5oefqw Description: 18A, 200V, 0.180 OHM, N-CHANNEL
auf Bestellung 3985 Stücke:
Lieferzeit 10-14 Tag (e)
217+2.42 EUR
Mindestbestellmenge: 217
RF1S640SM Harris Corporation HRISSD64-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 18A TO263AB
auf Bestellung 805 Stücke:
Lieferzeit 10-14 Tag (e)
119+4.45 EUR
Mindestbestellmenge: 119
RF1S70N03 RF1S70N03 Harris Corporation HRISS982-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 70A TO262AA
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 789 Stücke:
Lieferzeit 10-14 Tag (e)
188+2.64 EUR
Mindestbestellmenge: 188
RF1S70N06 RF1S70N06 Harris Corporation FAIRS43450-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 70A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
RF1S9530 RF1S9530 Harris Corporation HRISSD80-1.pdf?t.download=true&u=5oefqw Description: -12A, -100V, 0.3 OHM, P-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 5418 Stücke:
Lieferzeit 10-14 Tag (e)
161+3.04 EUR
Mindestbestellmenge: 161
RF1S9540 RF1S9540 Harris Corporation HRISS848-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFETS
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 7199 Stücke:
Lieferzeit 10-14 Tag (e)
141+3.75 EUR
Mindestbestellmenge: 141
RF1S9630SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
311+1.71 EUR
Mindestbestellmenge: 311
RCA1A05
RCA1A05
Hersteller: Harris Corporation
Description: PNP POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1A09
RCA1A09
Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
auf Bestellung 1305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
533+0.91 EUR
Mindestbestellmenge: 533
RCA1A18
RCA1A18
Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
468+1.04 EUR
Mindestbestellmenge: 468
RCA1C03
RCA1C03
Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1C04
RCA1C04
Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1C13
RCA1C13
Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA3055 INSLS12267-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: TRANS NPN 60V 15A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 400mA, 4A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Produkt ist nicht verfügbar
RCA8766 INSLS10590-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: TRANS NPN DARL 350V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 6A, 3V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
Produkt ist nicht verfügbar
RCA9116E HRISD005-2-173.pdf?t.download=true&u=5oefqw
RCA9116E
Hersteller: Harris Corporation
Description: TRANS PNP 100V 200A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 750mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 7.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 W
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
207+2.44 EUR
Mindestbestellmenge: 207
RCA9166A INSLS12268-1.pdf?t.download=true&u=5oefqw
RCA9166A
Hersteller: Harris Corporation
Description: TRANS NPN 250V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 3126 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
115+4.24 EUR
Mindestbestellmenge: 115
RCD4001AK3
Hersteller: Harris Corporation
Description: IC GATE NOR QUAD 2-INP
Packaging: Bulk
Part Status: Active
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+41.81 EUR
Mindestbestellmenge: 12
RCH10N50A
Hersteller: Harris Corporation
Description: RCH10N50A
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
RF1K49211 HRISC016-4.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-SOIC
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
auf Bestellung 1588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
825+0.63 EUR
Mindestbestellmenge: 825
RF1K49223 HRISC016-4.pdf?t.download=true&u=5oefqw
RF1K49223
Hersteller: Harris Corporation
Description: DUAL P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 37842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
381+1.39 EUR
Mindestbestellmenge: 381
RF1S15N06
RF1S15N06
Hersteller: Harris Corporation
Description: DISCRETE ,LOGIC LEVEL GATE (5V),
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
566+0.88 EUR
Mindestbestellmenge: 566
RF1S15N06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
592+0.83 EUR
Mindestbestellmenge: 592
RF1S15N08L HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: LOGIC LEVEL GATE (5V) DEVICE
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
498+1.07 EUR
Mindestbestellmenge: 498
RF1S17N06L
RF1S17N06L
Hersteller: Harris Corporation
Description: DISCRETE ,LOGIC LEVEL GATE (5V),
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
451+1.14 EUR
Mindestbestellmenge: 451
RF1S17N06LSM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: LOGIC LEVEL GATE (5V) DEVICE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
498+1.02 EUR
Mindestbestellmenge: 498
RF1S22N10
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
342+1.47 EUR
Mindestbestellmenge: 342
RF1S22N10SM HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S22N10SM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 3853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
381+1.32 EUR
Mindestbestellmenge: 381
RF1S23N06LE INSLS12758-1.pdf?t.download=true&u=5oefqw
RF1S23N06LE
Hersteller: Harris Corporation
Description: 23A, 60V, 0.065OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
423+1.19 EUR
Mindestbestellmenge: 423
RF1S23N06LESM HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S23N06LESM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 5549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
468+1.07 EUR
Mindestbestellmenge: 468
RF1S23N06LESM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
437+1.15 EUR
Mindestbestellmenge: 437
RF1S25N06 HRISS981-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 25A, 60V, 0.047 OHM, N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 25A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V
Produkt ist nicht verfügbar
RF1S25N06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 3005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
460+1.07 EUR
Mindestbestellmenge: 460
RF1S25N06SM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
437+1.14 EUR
Mindestbestellmenge: 437
RF1S25N06SMR4643
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 25A
Packaging: Bulk
Part Status: Active
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
460+1.07 EUR
Mindestbestellmenge: 460
RF1S30N06LE
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 30A
Packaging: Bulk
Part Status: Active
auf Bestellung 1848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
381+1.3 EUR
Mindestbestellmenge: 381
RF1S30N06LESM9A HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S30N06LESM9A
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RF1S30P05
RF1S30P05
Hersteller: Harris Corporation
Description: 30A, 50V, 0.065OHM, P-CHANNEL,
Packaging: Bulk
Part Status: Active
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
370+1.43 EUR
Mindestbestellmenge: 370
RF1S30P06
Hersteller: Harris Corporation
Description: 30A, 60V, 0.065OHM, P-CHANNEL,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RF1S30P06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RF1S30P06SM9A FAIRS43770-1.pdf?t.download=true&u=5oefqw
RF1S30P06SM9A
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RF1S40N10LE
RF1S40N10LE
Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 2006 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
211+2.34 EUR
Mindestbestellmenge: 211
RF1S40N10SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
210+2.37 EUR
Mindestbestellmenge: 210
RF1S42N03L HRISS497-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 42A, 30V, 0.025 OHMS, N-CHANNEL
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
400+1.36 EUR
Mindestbestellmenge: 400
RF1S45N02L HRISS551-1.pdf?t.download=true&u=5oefqw
RF1S45N02L
Hersteller: Harris Corporation
Description: 45A, 20V, 0.022OHM, N-CHANNEL LO
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
533+0.92 EUR
Mindestbestellmenge: 533
RF1S45N02LSM HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S45N02LSM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
592+0.84 EUR
Mindestbestellmenge: 592
RF1S45N02LSM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
579+0.86 EUR
Mindestbestellmenge: 579
RF1S45N03L INSLS18395-1.pdf?t.download=true&u=5oefqw
RF1S45N03L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
333+1.46 EUR
Mindestbestellmenge: 333
RF1S45N06LE HRISS078-1.pdf?t.download=true&u=5oefqw
RF1S45N06LE
Hersteller: Harris Corporation
Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
310+1.62 EUR
Mindestbestellmenge: 310
RF1S45N06LESM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
310+1.62 EUR
Mindestbestellmenge: 310
RF1S45N06LESM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
317+1.59 EUR
Mindestbestellmenge: 317
RF1S45N06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
325+1.54 EUR
Mindestbestellmenge: 325
RF1S4N100SM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: MOSFET N-CH 1000V 4.3A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
89+5.49 EUR
Mindestbestellmenge: 89
RF1S50N06 HRISS983-1.pdf?t.download=true&u=5oefqw
RF1S50N06
Hersteller: Harris Corporation
Description: 50A, 60V, 0.022 OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
auf Bestellung 4317 Stücke:
Lieferzeit 10-14 Tag (e)
RF1S50N06LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 5642 Stücke:
Lieferzeit 10-14 Tag (e)
RF1S50N06LESM HRISS01274-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 2277 Stücke:
Lieferzeit 10-14 Tag (e)
RF1S50N06SM9AS2551 HRISS01274-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: MOSFET 60V 50A
Packaging: Bulk
Part Status: Active
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
RF1S540 HRISSA21-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 28A, 100V, 0.077 OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 4101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
249+2.13 EUR
Mindestbestellmenge: 249
RF1S630SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 2098 Stücke:
Lieferzeit 10-14 Tag (e)
RF1S630SM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
301+1.76 EUR
Mindestbestellmenge: 301
RF1S640 HRISSD64-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 18A, 200V, 0.180 OHM, N-CHANNEL
auf Bestellung 3985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
217+2.42 EUR
Mindestbestellmenge: 217
RF1S640SM HRISSD64-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: MOSFET N-CH 200V 18A TO263AB
auf Bestellung 805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
119+4.45 EUR
Mindestbestellmenge: 119
RF1S70N03 HRISS982-1.pdf?t.download=true&u=5oefqw
RF1S70N03
Hersteller: Harris Corporation
Description: MOSFET N-CH 30V 70A TO262AA
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 789 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
188+2.64 EUR
Mindestbestellmenge: 188
RF1S70N06 FAIRS43450-1.pdf?t.download=true&u=5oefqw
RF1S70N06
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 70A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
RF1S9530 HRISSD80-1.pdf?t.download=true&u=5oefqw
RF1S9530
Hersteller: Harris Corporation
Description: -12A, -100V, 0.3 OHM, P-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 5418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
161+3.04 EUR
Mindestbestellmenge: 161
RF1S9540 HRISS848-1.pdf?t.download=true&u=5oefqw
RF1S9540
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFETS
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 7199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
141+3.75 EUR
Mindestbestellmenge: 141
RF1S9630SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
311+1.71 EUR
Mindestbestellmenge: 311
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