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RF1S17N06LSM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: LOGIC LEVEL GATE (5V) DEVICE
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RF1S22N10 Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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RF1S22N10SM RF1S22N10SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 100 V
Part Status: Active
Supplier Device Package: TO-263AB
Current - Continuous Drain (Id) @ 25°C: 22A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
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RF1S23N06LE RF1S23N06LE Harris Corporation INSLS12758-1.pdf?t.download=true&u=5oefqw Description: 23A, 60V, 0.065OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
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RF1S23N06LESM RF1S23N06LESM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
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RF1S23N06LESM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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RF1S25N06 Harris Corporation HRISS981-1.pdf?t.download=true&u=5oefqw Description: 25A, 60V, 0.047 OHM, N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 25A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V
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RF1S25N06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
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RF1S25N06SM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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RF1S25N06SMR4643 Harris Corporation Description: MOSFET N-CH 60V 25A
Packaging: Bulk
Part Status: Active
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RF1S30N06LE Harris Corporation Description: MOSFET N-CH 60V 30A
Packaging: Bulk
Part Status: Active
auf Bestellung 1667 Stücke:
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RF1S30N06LESM9A RF1S30N06LESM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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RF1S30P05 RF1S30P05 Harris Corporation Description: MOSFET P-CH 50V 30A
Packaging: Bulk
Part Status: Active
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RF1S30P06 Harris Corporation Description: 30A, 60V, 0.065OHM, P-CHANNEL,
Packaging: Bulk
Part Status: Active
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RF1S30P06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
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RF1S30P06SM9A RF1S30P06SM9A Harris Corporation FAIRS43770-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
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RF1S40N10LE Harris Corporation Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
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RF1S40N10SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
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RF1S42N03L Harris Corporation HRISS497-1.pdf?t.download=true&u=5oefqw Description: 42A, 30V, 0.025 OHMS, N-CHANNEL
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RF1S45N02L RF1S45N02L Harris Corporation HRISS551-1.pdf?t.download=true&u=5oefqw Description: 45A, 20V, 0.022OHM, N-CHANNEL LO
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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RF1S45N02LSM RF1S45N02LSM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
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RF1S45N02LSM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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395+1.15 EUR
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RF1S45N03L RF1S45N03L Harris Corporation INSLS18395-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
auf Bestellung 770 Stücke:
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RF1S45N06LE RF1S45N06LE Harris Corporation HRISS078-1.pdf?t.download=true&u=5oefqw Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
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RF1S45N06LESM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 843 Stücke:
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310+1.57 EUR
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RF1S45N06LESM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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317+1.54 EUR
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RF1S45N06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 700 Stücke:
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RF1S4N100SM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 1000V 4.3A TO263AB
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 187 Stücke:
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RF1S50N06 RF1S50N06 Harris Corporation HRISS983-1.pdf?t.download=true&u=5oefqw Description: 50A, 60V, 0.022 OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
auf Bestellung 2746 Stücke:
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197+2.31 EUR
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RF1S50N06LE Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4042 Stücke:
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190+2.38 EUR
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RF1S50N06LESM Harris Corporation HRISS01274-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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209+2.17 EUR
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RF1S50N06SM9AS2551 Harris Corporation HRISS01274-1.pdf?t.download=true&u=5oefqw Description: MOSFET 60V 50A
Packaging: Bulk
Part Status: Active
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200+2.26 EUR
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RF1S530SM9A RF1S530SM9A Harris Corporation FAIRS14594-1.pdf?t.download=true&u=5oefqw Description: 14A, 100V, 0.16OHM, N-CHANNEL PO
Packaging: Bulk
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258+1.79 EUR
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RF1S540 Harris Corporation HRISSA21-1.pdf?t.download=true&u=5oefqw Description: 28A, 100V, 0.077 OHM, N-CHANNEL
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
auf Bestellung 4101 Stücke:
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249+2.13 EUR
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RF1S630SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
auf Bestellung 2098 Stücke:
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RF1S630SM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 4000 Stücke:
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189+2.4 EUR
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RF1S640 Harris Corporation HRISSD64-1.pdf?t.download=true&u=5oefqw Description: 18A, 200V, 0.180 OHM, N-CHANNEL
auf Bestellung 3985 Stücke:
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RF1S640SM Harris Corporation HRISSD64-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 18A TO263AB
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119+4.45 EUR
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RF1S70N03 RF1S70N03 Harris Corporation HRISS982-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 70A TO262AA
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 789 Stücke:
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164+2.74 EUR
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RF1S70N06 RF1S70N06 Harris Corporation FAIRS43450-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 70A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
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RF1S9530 RF1S9530 Harris Corporation HRISSD80-1.pdf?t.download=true&u=5oefqw Description: -12A, -100V, 0.3 OHM, P-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 5418 Stücke:
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142+3.16 EUR
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RF1S9540 RF1S9540 Harris Corporation HRISS848-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFETS
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 7199 Stücke:
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RF1S9630SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
auf Bestellung 1650 Stücke:
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RF1S9640 RF1S9640 Harris Corporation HRISSC89-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 4500 Stücke:
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RFA100N05E Harris Corporation HRISD017-4-778.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-218-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
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RFAS15N06SM Harris Corporation Description: RFAS15N06SM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFB18N10CS Harris Corporation HRISD017-7-3.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 18A TO220AB-5
Packaging: Bulk
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-5
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
auf Bestellung 674 Stücke:
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121+4.2 EUR
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RFB18N10CSVM Harris Corporation INSLS10838-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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RFD10N05SM RFD10N05SM Harris Corporation TOCSS00198-1.pdf?t.download=true&u=5oefqw Description: 10A, 50V, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-252 (DPAK)
Drain to Source Voltage (Vdss): 50 V
auf Bestellung 11858 Stücke:
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308+1.45 EUR
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RFD14N05S2515 Harris Corporation Description: MOSFET N-CH 50V 14A
Packaging: Bulk
Part Status: Active
auf Bestellung 900 Stücke:
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606+0.75 EUR
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RFD14N06 RFD14N06 Harris Corporation INSLS14930-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 3664 Stücke:
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330+1.36 EUR
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RFD14N06LSM9A RFD14N06LSM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
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550+0.82 EUR
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RFD15N06LESM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 4077 Stücke:
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575+0.84 EUR
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RFD15P06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 120 Stücke
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RFD16N02L Harris Corporation HRISS550-1.pdf?t.download=true&u=5oefqw Description: 16A, 20V, 0.022 OHM, N-CHANNEL L
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
auf Bestellung 1793 Stücke:
Lieferzeit 10-14 Tag (e)
606+0.88 EUR
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RFD16N03LSM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Supplier Device Package: TO-252-3 (DPAK)
Current - Continuous Drain (Id) @ 25°C: 16A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 2027 Stücke:
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289+1.83 EUR
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RFD16N03LSM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 1540 Stücke:
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RFD16N05 RFD16N05 Harris Corporation FAIRS35810-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 50V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 14894 Stücke:
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203+2.19 EUR
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RFD16N05L RFD16N05L Harris Corporation HRISD017-6-88.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250mA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 32985 Stücke:
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175+2.55 EUR
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RFD16N05LSM RFD16N05LSM Harris Corporation FAIRS37307-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250mA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 1356 Stücke:
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343+1.31 EUR
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RF1S17N06LSM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: LOGIC LEVEL GATE (5V) DEVICE
auf Bestellung 4000 Stücke:
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AnzahlPreis
498+1.02 EUR
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RF1S22N10
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
342+1.47 EUR
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RF1S22N10SM HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S22N10SM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 100 V
Part Status: Active
Supplier Device Package: TO-263AB
Current - Continuous Drain (Id) @ 25°C: 22A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 3853 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
381+1.32 EUR
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RF1S23N06LE INSLS12758-1.pdf?t.download=true&u=5oefqw
RF1S23N06LE
Hersteller: Harris Corporation
Description: 23A, 60V, 0.065OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 2400 Stücke:
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AnzahlPreis
288+1.55 EUR
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RF1S23N06LESM HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S23N06LESM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 5549 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
319+1.4 EUR
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RF1S23N06LESM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
298+1.5 EUR
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RF1S25N06 HRISS981-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 25A, 60V, 0.047 OHM, N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 25A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V
Produkt ist nicht verfügbar
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RF1S25N06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 3005 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
313+1.43 EUR
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RF1S25N06SM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
298+1.5 EUR
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RF1S25N06SMR4643
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 25A
Packaging: Bulk
Part Status: Active
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
313+1.43 EUR
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RF1S30N06LE
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 30A
Packaging: Bulk
Part Status: Active
auf Bestellung 1667 Stücke:
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AnzahlPreis
260+1.76 EUR
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RF1S30N06LESM9A HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S30N06LESM9A
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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RF1S30P05
RF1S30P05
Hersteller: Harris Corporation
Description: MOSFET P-CH 50V 30A
Packaging: Bulk
Part Status: Active
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
281+1.62 EUR
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RF1S30P06
Hersteller: Harris Corporation
Description: 30A, 60V, 0.065OHM, P-CHANNEL,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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RF1S30P06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RF1S30P06SM9A FAIRS43770-1.pdf?t.download=true&u=5oefqw
RF1S30P06SM9A
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RF1S40N10LE
Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 1368 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
186+2.44 EUR
Mindestbestellmenge: 186 Stücke
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RF1S40N10SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 1375 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
185+2.47 EUR
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RF1S42N03L HRISS497-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 42A, 30V, 0.025 OHMS, N-CHANNEL
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
400+1.36 EUR
Mindestbestellmenge: 400 Stücke
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RF1S45N02L HRISS551-1.pdf?t.download=true&u=5oefqw
RF1S45N02L
Hersteller: Harris Corporation
Description: 45A, 20V, 0.022OHM, N-CHANNEL LO
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
363+1.26 EUR
Mindestbestellmenge: 363 Stücke
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RF1S45N02LSM HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S45N02LSM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
404+1.12 EUR
Mindestbestellmenge: 404 Stücke
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RF1S45N02LSM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
395+1.15 EUR
Mindestbestellmenge: 395 Stücke
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RF1S45N03L INSLS18395-1.pdf?t.download=true&u=5oefqw
RF1S45N03L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
333+1.52 EUR
Mindestbestellmenge: 333 Stücke
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RF1S45N06LE HRISS078-1.pdf?t.download=true&u=5oefqw
RF1S45N06LE
Hersteller: Harris Corporation
Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
310+1.57 EUR
Mindestbestellmenge: 310 Stücke
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RF1S45N06LESM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 843 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
310+1.57 EUR
Mindestbestellmenge: 310 Stücke
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RF1S45N06LESM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
317+1.54 EUR
Mindestbestellmenge: 317 Stücke
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RF1S45N06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
325+1.49 EUR
Mindestbestellmenge: 325 Stücke
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RF1S4N100SM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: MOSFET N-CH 1000V 4.3A TO263AB
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
89+5.72 EUR
Mindestbestellmenge: 89 Stücke
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RF1S50N06 HRISS983-1.pdf?t.download=true&u=5oefqw
RF1S50N06
Hersteller: Harris Corporation
Description: 50A, 60V, 0.022 OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
auf Bestellung 2746 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
197+2.31 EUR
Mindestbestellmenge: 197 Stücke
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RF1S50N06LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4042 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
190+2.38 EUR
Mindestbestellmenge: 190 Stücke
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RF1S50N06LESM HRISS01274-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1705 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
209+2.17 EUR
Mindestbestellmenge: 209 Stücke
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RF1S50N06SM9AS2551 HRISS01274-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: MOSFET 60V 50A
Packaging: Bulk
Part Status: Active
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
200+2.26 EUR
Mindestbestellmenge: 200 Stücke
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RF1S530SM9A FAIRS14594-1.pdf?t.download=true&u=5oefqw
RF1S530SM9A
Hersteller: Harris Corporation
Description: 14A, 100V, 0.16OHM, N-CHANNEL PO
Packaging: Bulk
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
258+1.79 EUR
Mindestbestellmenge: 258 Stücke
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RF1S540 HRISSA21-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 28A, 100V, 0.077 OHM, N-CHANNEL
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
auf Bestellung 4101 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
249+2.13 EUR
Mindestbestellmenge: 249 Stücke
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RF1S630SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
auf Bestellung 2098 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
197+2.31 EUR
Mindestbestellmenge: 197 Stücke
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RF1S630SM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
189+2.4 EUR
Mindestbestellmenge: 189 Stücke
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RF1S640 HRISSD64-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 18A, 200V, 0.180 OHM, N-CHANNEL
auf Bestellung 3985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
217+2.42 EUR
Mindestbestellmenge: 217 Stücke
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RF1S640SM HRISSD64-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: MOSFET N-CH 200V 18A TO263AB
auf Bestellung 805 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
119+4.45 EUR
Mindestbestellmenge: 119 Stücke
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RF1S70N03 HRISS982-1.pdf?t.download=true&u=5oefqw
RF1S70N03
Hersteller: Harris Corporation
Description: MOSFET N-CH 30V 70A TO262AA
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 789 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
164+2.74 EUR
Mindestbestellmenge: 164 Stücke
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RF1S70N06 FAIRS43450-1.pdf?t.download=true&u=5oefqw
RF1S70N06
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 70A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 70A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
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RF1S9530 HRISSD80-1.pdf?t.download=true&u=5oefqw
RF1S9530
Hersteller: Harris Corporation
Description: -12A, -100V, 0.3 OHM, P-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 5418 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
142+3.16 EUR
Mindestbestellmenge: 142 Stücke
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RF1S9540 HRISS848-1.pdf?t.download=true&u=5oefqw
RF1S9540
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFETS
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 7199 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
130+3.62 EUR
Mindestbestellmenge: 130 Stücke
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RF1S9630SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
311+1.71 EUR
Mindestbestellmenge: 311 Stücke
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RF1S9640 HRISSC89-1.pdf?t.download=true&u=5oefqw
RF1S9640
Hersteller: Harris Corporation
Description: MOSFET P-CH 200V 11A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
158+2.86 EUR
Mindestbestellmenge: 158 Stücke
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RFA100N05E HRISD017-4-778.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-218-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
auf Bestellung 1544 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
57+8.69 EUR
Mindestbestellmenge: 57 Stücke
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RFAS15N06SM
Hersteller: Harris Corporation
Description: RFAS15N06SM
Produkt ist nicht verfügbar
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RFB18N10CS HRISD017-7-3.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 18A TO220AB-5
Packaging: Bulk
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-5
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
auf Bestellung 674 Stücke:
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AnzahlPreis
121+4.2 EUR
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RFB18N10CSVM INSLS10838-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 49 Stücke
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RFD10N05SM TOCSS00198-1.pdf?t.download=true&u=5oefqw
RFD10N05SM
Hersteller: Harris Corporation
Description: 10A, 50V, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-252 (DPAK)
Drain to Source Voltage (Vdss): 50 V
auf Bestellung 11858 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
308+1.45 EUR
Mindestbestellmenge: 308 Stücke
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RFD14N05S2515
Hersteller: Harris Corporation
Description: MOSFET N-CH 50V 14A
Packaging: Bulk
Part Status: Active
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
606+0.75 EUR
Mindestbestellmenge: 606 Stücke
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RFD14N06 INSLS14930-1.pdf?t.download=true&u=5oefqw
RFD14N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 3664 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
330+1.36 EUR
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RFD14N06LSM9A HRISC016-2.pdf?t.download=true&u=5oefqw
RFD14N06LSM9A
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
550+0.82 EUR
Mindestbestellmenge: 550 Stücke
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RFD15N06LESM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 4077 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
575+0.84 EUR
Mindestbestellmenge: 575 Stücke
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RFD15P06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 120 Stücke
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RFD16N02L HRISS550-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 16A, 20V, 0.022 OHM, N-CHANNEL L
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 16A, 5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
auf Bestellung 1793 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
606+0.88 EUR
Mindestbestellmenge: 606 Stücke
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RFD16N03LSM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Supplier Device Package: TO-252-3 (DPAK)
Current - Continuous Drain (Id) @ 25°C: 16A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 2027 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
289+1.83 EUR
Mindestbestellmenge: 289 Stücke
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RFD16N03LSM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1540 Stücke:
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RFD16N05 FAIRS35810-1.pdf?t.download=true&u=5oefqw
RFD16N05
Hersteller: Harris Corporation
Description: MOSFET N-CH 50V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 14894 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
203+2.19 EUR
Mindestbestellmenge: 203 Stücke
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RFD16N05L HRISD017-6-88.pdf?t.download=true&u=5oefqw
RFD16N05L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250mA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 32985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
175+2.55 EUR
Mindestbestellmenge: 175 Stücke
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RFD16N05LSM FAIRS37307-1.pdf?t.download=true&u=5oefqw
RFD16N05LSM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250mA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 1356 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
343+1.31 EUR
Mindestbestellmenge: 343 Stücke
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