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RFG40N10LE RFG40N10LE Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
202+2.31 EUR
Mindestbestellmenge: 202
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RFG45N06 RFG45N06 Harris Corporation HRISD017-4-736.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 2175 Stücke:
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278+1.75 EUR
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RFG45N06LE Harris Corporation HRISS078-1.pdf?t.download=true&u=5oefqw Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
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RFG50N05 RFG50N05 Harris Corporation HRISD017-4-750.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250nA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
auf Bestellung 145 Stücke:
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58+8.74 EUR
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RFG50N06LE RFG50N06LE Harris Corporation HRISS01274-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
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RFG75N05E Harris Corporation HRISD017-4-773.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 20 V
auf Bestellung 18160 Stücke:
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40+12.84 EUR
Mindestbestellmenge: 40
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RFH10N50 Harris Corporation HRISD017-4-645.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 302 Stücke:
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82+5.73 EUR
Mindestbestellmenge: 82
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RFH30N12 Harris Corporation HRISD017-4-715.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
94+5.40 EUR
Mindestbestellmenge: 94
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RFH30N15 Harris Corporation HRISD017-4-715.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 1417 Stücke:
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77+6.30 EUR
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RFH45N05 Harris Corporation HRISD017-4-742.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RFH75N05 RFH75N05 Harris Corporation TOCSS00198-1.pdf?t.download=true&u=5oefqw Description: 75A, 50V, 0.008OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-218 Isolated
Drain to Source Voltage (Vdss): 50 V
auf Bestellung 80 Stücke:
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80+7.50 EUR
Mindestbestellmenge: 80
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RFH75N05E Harris Corporation HRISD017-4-773.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RFIS30P06 Harris Corporation Description: MOSFET P-CH 60V 30A
Packaging: Bulk
auf Bestellung 1100 Stücke:
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201+2.52 EUR
Mindestbestellmenge: 201
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RFIS40N10LE RFIS40N10LE Harris Corporation Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
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214+2.17 EUR
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RFIS70N06SM Harris Corporation Description: MOSFET N-CH 60V 70A
Packaging: Bulk
Part Status: Active
auf Bestellung 1000 Stücke:
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226+2.06 EUR
Mindestbestellmenge: 226
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RFL1N12 Harris Corporation HRISSD53-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 845 Stücke:
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370+1.37 EUR
Mindestbestellmenge: 370
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RFL1N15L RFL1N15L Harris Corporation HRISD017-6-23.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 1621 Stücke:
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180+2.83 EUR
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RFL4N15 RFL4N15 Harris Corporation HRISD017-4-621.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 2A, 10V
Power Dissipation (Max): 8.33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 1187 Stücke:
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273+1.81 EUR
Mindestbestellmenge: 273
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RFM10N15L Harris Corporation HRISD017-6-66.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RFM10N45 Harris Corporation HRISD017-4-649.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
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RFM10N50 Harris Corporation HRISD017-4-649.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
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RFM12N10 Harris Corporation HRISD017-4-659.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Produkt ist nicht verfügbar
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RFM12P08 Harris Corporation HRISD017-5-174.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
173+2.72 EUR
Mindestbestellmenge: 173
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RFM12P10 Harris Corporation HRISD017-5-174.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
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RFM15N05L Harris Corporation HRISD017-6-84.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RFM25N06 RFM25N06 Harris Corporation INSLS12273-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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RFM3N45 RFM3N45 Harris Corporation HRISD017-4-613.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
310+1.62 EUR
Mindestbestellmenge: 310
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RFM6P10 RFM6P10 Harris Corporation HRISD017-5-157.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 3064 Stücke:
Lieferzeit 10-14 Tag (e)
188+2.48 EUR
Mindestbestellmenge: 188
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RFP10N12L RFP10N12L Harris Corporation HRISD017-6-66.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 54904 Stücke:
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259+1.94 EUR
Mindestbestellmenge: 259
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RFP10N15101 RFP10N15101 Harris Corporation Description: 10A, 150V, 0.3OHM, N-CHANNEL, MO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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RFP10N15L RFP10N15L Harris Corporation HRISD017-6-66.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 35079 Stücke:
Lieferzeit 10-14 Tag (e)
342+1.45 EUR
Mindestbestellmenge: 342
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RFP10P12 RFP10P12 Harris Corporation HRISD017-5-170.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
300+1.87 EUR
Mindestbestellmenge: 300
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RFP10P15 RFP10P15 Harris Corporation HRISD017-5-170.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 75381 Stücke:
Lieferzeit 10-14 Tag (e)
130+3.89 EUR
Mindestbestellmenge: 130
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RFP12N06RLE RFP12N06RLE Harris Corporation HRISD017-6-70.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
auf Bestellung 13334 Stücke:
Lieferzeit 10-14 Tag (e)
503+0.99 EUR
Mindestbestellmenge: 503
Im Einkaufswagen  Stück im Wert von  UAH
RFP12N18 Harris Corporation HRISD017-4-663.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
283+1.80 EUR
Mindestbestellmenge: 283
Im Einkaufswagen  Stück im Wert von  UAH
RFP14N05P2 RFP14N05P2 Harris Corporation Description: 14A, 50V, 0.1OHM, N-CHANNEL, MOS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFP14N06L RFP14N06L Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1085 Stücke:
Lieferzeit 10-14 Tag (e)
683+0.71 EUR
Mindestbestellmenge: 683
Im Einkaufswagen  Stück im Wert von  UAH
RFP15N05L RFP15N05L Harris Corporation FAIRS37150-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
404+1.55 EUR
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Im Einkaufswagen  Stück im Wert von  UAH
RFP15N05L119 Harris Corporation Description: 15A, 50V, 0.14OHM, N-CHANNEL, MO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFP15N06 RFP15N06 Harris Corporation HRISD017-4-680.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 27099 Stücke:
Lieferzeit 10-14 Tag (e)
560+0.88 EUR
Mindestbestellmenge: 560
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RFP15N08L RFP15N08L Harris Corporation HRISD017-9-7.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 5V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 49688 Stücke:
Lieferzeit 10-14 Tag (e)
485+0.98 EUR
Mindestbestellmenge: 485
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RFP15N12 RFP15N12 Harris Corporation HRISD017-4-686.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 10952 Stücke:
Lieferzeit 10-14 Tag (e)
260+1.94 EUR
Mindestbestellmenge: 260
Im Einkaufswagen  Stück im Wert von  UAH
RFP15P05 RFP15P05 Harris Corporation HRISD017-5-178.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 90852 Stücke:
Lieferzeit 10-14 Tag (e)
221+2.19 EUR
Mindestbestellmenge: 221
Im Einkaufswagen  Stück im Wert von  UAH
RFP17N06L Harris Corporation HRISD017-6-99.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 17A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 30 V
auf Bestellung 2275 Stücke:
Lieferzeit 10-14 Tag (e)
267+1.99 EUR
Mindestbestellmenge: 267
Im Einkaufswagen  Stück im Wert von  UAH
RFP18N08 RFP18N08 Harris Corporation HRISD017-4-694.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 4075 Stücke:
Lieferzeit 10-14 Tag (e)
224+2.07 EUR
Mindestbestellmenge: 224
Im Einkaufswagen  Stück im Wert von  UAH
RFP23N06LE Harris Corporation Description: N-CHANNEL, MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1486 Stücke:
Lieferzeit 10-14 Tag (e)
683+0.73 EUR
Mindestbestellmenge: 683
Im Einkaufswagen  Stück im Wert von  UAH
RFP25N05L Harris Corporation HRISD017-6-103.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 25A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFP25N06L RFP25N06L Harris Corporation HRISD017-6-108.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12.5A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1389 Stücke:
Lieferzeit 10-14 Tag (e)
115+4.40 EUR
Mindestbestellmenge: 115
Im Einkaufswagen  Stück im Wert von  UAH
RFP2N08 RFP2N08 Harris Corporation HRISD017-4-601.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 3360 Stücke:
Lieferzeit 10-14 Tag (e)
1110+0.48 EUR
Mindestbestellmenge: 1110
Im Einkaufswagen  Stück im Wert von  UAH
RFP2N10 Harris Corporation HRISD017-4-601.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1323 Stücke:
Lieferzeit 10-14 Tag (e)
1323+0.51 EUR
Mindestbestellmenge: 1323
Im Einkaufswagen  Stück im Wert von  UAH
RFP2N12 Harris Corporation HRISD017-4-605.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
650+0.81 EUR
Mindestbestellmenge: 650
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RFP2N15 RFP2N15 Harris Corporation HRISD017-4-605.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 2411 Stücke:
Lieferzeit 10-14 Tag (e)
452+1.10 EUR
Mindestbestellmenge: 452
Im Einkaufswagen  Stück im Wert von  UAH
RFP2N20 Harris Corporation HRISD017-4-609.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1552 Stücke:
Lieferzeit 10-14 Tag (e)
503+1.06 EUR
Mindestbestellmenge: 503
Im Einkaufswagen  Stück im Wert von  UAH
RFP2P08 Harris Corporation HRISD017-5-149.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
auf Bestellung 3542 Stücke:
Lieferzeit 10-14 Tag (e)
1202+0.42 EUR
Mindestbestellmenge: 1202
Im Einkaufswagen  Stück im Wert von  UAH
RFP2P10 RFP2P10 Harris Corporation HRISD017-5-149.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 11516 Stücke:
Lieferzeit 10-14 Tag (e)
592+0.82 EUR
Mindestbestellmenge: 592
Im Einkaufswagen  Stück im Wert von  UAH
RFP30N6LER4541 RFP30N6LER4541 Harris Corporation Description: 30A, 60V, LOGIC LEVEL N CHANNEL
Packaging: Bulk
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
666+0.74 EUR
Mindestbestellmenge: 666
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RFP3N45 Harris Corporation HRISD017-4-613.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFP40N10S5001 RFP40N10S5001 Harris Corporation Description: 40A, 100V, 0.04OHM, N CHANNEL, M
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFP42N03L RFP42N03L Harris Corporation HRISS497-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 42A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 42A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 63600 Stücke:
Lieferzeit 10-14 Tag (e)
243+2.01 EUR
Mindestbestellmenge: 243
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RFP45N02L RFP45N02L Harris Corporation HRISS551-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 1871 Stücke:
Lieferzeit 10-14 Tag (e)
497+0.93 EUR
Mindestbestellmenge: 497
Im Einkaufswagen  Stück im Wert von  UAH
RFG40N10LE
RFG40N10LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
202+2.31 EUR
Mindestbestellmenge: 202
Im Einkaufswagen  Stück im Wert von  UAH
RFG45N06 HRISD017-4-736.pdf?t.download=true&u=5oefqw
RFG45N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 2175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
278+1.75 EUR
Mindestbestellmenge: 278
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RFG45N06LE HRISS078-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFG50N05 HRISD017-4-750.pdf?t.download=true&u=5oefqw
RFG50N05
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250nA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
58+8.74 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
RFG50N06LE HRISS01274-1.pdf?t.download=true&u=5oefqw
RFG50N06LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFG75N05E HRISD017-4-773.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 20 V
auf Bestellung 18160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+12.84 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
RFH10N50 HRISD017-4-645.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
82+5.73 EUR
Mindestbestellmenge: 82
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RFH30N12 HRISD017-4-715.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
94+5.40 EUR
Mindestbestellmenge: 94
Im Einkaufswagen  Stück im Wert von  UAH
RFH30N15 HRISD017-4-715.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 1417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+6.30 EUR
Mindestbestellmenge: 77
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RFH45N05 HRISD017-4-742.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFH75N05 TOCSS00198-1.pdf?t.download=true&u=5oefqw
RFH75N05
Hersteller: Harris Corporation
Description: 75A, 50V, 0.008OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-218 Isolated
Drain to Source Voltage (Vdss): 50 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
80+7.50 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
RFH75N05E HRISD017-4-773.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFIS30P06
Hersteller: Harris Corporation
Description: MOSFET P-CH 60V 30A
Packaging: Bulk
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
201+2.52 EUR
Mindestbestellmenge: 201
Im Einkaufswagen  Stück im Wert von  UAH
RFIS40N10LE
RFIS40N10LE
Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
214+2.17 EUR
Mindestbestellmenge: 214
Im Einkaufswagen  Stück im Wert von  UAH
RFIS70N06SM
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 70A
Packaging: Bulk
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
226+2.06 EUR
Mindestbestellmenge: 226
Im Einkaufswagen  Stück im Wert von  UAH
RFL1N12 HRISSD53-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
370+1.37 EUR
Mindestbestellmenge: 370
Im Einkaufswagen  Stück im Wert von  UAH
RFL1N15L HRISD017-6-23.pdf?t.download=true&u=5oefqw
RFL1N15L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1621 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
180+2.83 EUR
Mindestbestellmenge: 180
Im Einkaufswagen  Stück im Wert von  UAH
RFL4N15 HRISD017-4-621.pdf?t.download=true&u=5oefqw
RFL4N15
Hersteller: Harris Corporation
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 2A, 10V
Power Dissipation (Max): 8.33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-205AF (TO-39)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
273+1.81 EUR
Mindestbestellmenge: 273
Im Einkaufswagen  Stück im Wert von  UAH
RFM10N15L HRISD017-6-66.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFM10N45 HRISD017-4-649.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFM10N50 HRISD017-4-649.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFM12N10 HRISD017-4-659.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFM12P08 HRISD017-5-174.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
173+2.72 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
RFM12P10 HRISD017-5-174.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFM15N05L HRISD017-6-84.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFM25N06 INSLS12273-1.pdf?t.download=true&u=5oefqw
RFM25N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFM3N45 HRISD017-4-613.pdf?t.download=true&u=5oefqw
RFM3N45
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
310+1.62 EUR
Mindestbestellmenge: 310
Im Einkaufswagen  Stück im Wert von  UAH
RFM6P10 HRISD017-5-157.pdf?t.download=true&u=5oefqw
RFM6P10
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 3064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
188+2.48 EUR
Mindestbestellmenge: 188
Im Einkaufswagen  Stück im Wert von  UAH
RFP10N12L HRISD017-6-66.pdf?t.download=true&u=5oefqw
RFP10N12L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 54904 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
259+1.94 EUR
Mindestbestellmenge: 259
Im Einkaufswagen  Stück im Wert von  UAH
RFP10N15101
RFP10N15101
Hersteller: Harris Corporation
Description: 10A, 150V, 0.3OHM, N-CHANNEL, MO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFP10N15L HRISD017-6-66.pdf?t.download=true&u=5oefqw
RFP10N15L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 35079 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
342+1.45 EUR
Mindestbestellmenge: 342
Im Einkaufswagen  Stück im Wert von  UAH
RFP10P12 HRISD017-5-170.pdf?t.download=true&u=5oefqw
RFP10P12
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+1.87 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
RFP10P15 HRISD017-5-170.pdf?t.download=true&u=5oefqw
RFP10P15
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 75381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
130+3.89 EUR
Mindestbestellmenge: 130
Im Einkaufswagen  Stück im Wert von  UAH
RFP12N06RLE HRISD017-6-70.pdf?t.download=true&u=5oefqw
RFP12N06RLE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
auf Bestellung 13334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
503+0.99 EUR
Mindestbestellmenge: 503
Im Einkaufswagen  Stück im Wert von  UAH
RFP12N18 HRISD017-4-663.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
283+1.80 EUR
Mindestbestellmenge: 283
Im Einkaufswagen  Stück im Wert von  UAH
RFP14N05P2
RFP14N05P2
Hersteller: Harris Corporation
Description: 14A, 50V, 0.1OHM, N-CHANNEL, MOS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFP14N06L
RFP14N06L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
683+0.71 EUR
Mindestbestellmenge: 683
Im Einkaufswagen  Stück im Wert von  UAH
RFP15N05L FAIRS37150-1.pdf?t.download=true&u=5oefqw
RFP15N05L
Hersteller: Harris Corporation
Description: MOSFET N-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
404+1.55 EUR
Mindestbestellmenge: 404
Im Einkaufswagen  Stück im Wert von  UAH
RFP15N05L119
Hersteller: Harris Corporation
Description: 15A, 50V, 0.14OHM, N-CHANNEL, MO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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RFP15N06 HRISD017-4-680.pdf?t.download=true&u=5oefqw
RFP15N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 27099 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
560+0.88 EUR
Mindestbestellmenge: 560
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RFP15N08L HRISD017-9-7.pdf?t.download=true&u=5oefqw
RFP15N08L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 5V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 49688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
485+0.98 EUR
Mindestbestellmenge: 485
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RFP15N12 HRISD017-4-686.pdf?t.download=true&u=5oefqw
RFP15N12
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 10952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
260+1.94 EUR
Mindestbestellmenge: 260
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RFP15P05 HRISD017-5-178.pdf?t.download=true&u=5oefqw
RFP15P05
Hersteller: Harris Corporation
Description: MOSFET P-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 90852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
221+2.19 EUR
Mindestbestellmenge: 221
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RFP17N06L HRISD017-6-99.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 17A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 30 V
auf Bestellung 2275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
267+1.99 EUR
Mindestbestellmenge: 267
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RFP18N08 HRISD017-4-694.pdf?t.download=true&u=5oefqw
RFP18N08
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 4075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
224+2.07 EUR
Mindestbestellmenge: 224
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RFP23N06LE
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
683+0.73 EUR
Mindestbestellmenge: 683
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RFP25N05L HRISD017-6-103.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 25A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Produkt ist nicht verfügbar
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RFP25N06L HRISD017-6-108.pdf?t.download=true&u=5oefqw
RFP25N06L
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12.5A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
115+4.40 EUR
Mindestbestellmenge: 115
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RFP2N08 HRISD017-4-601.pdf?t.download=true&u=5oefqw
RFP2N08
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 3360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1110+0.48 EUR
Mindestbestellmenge: 1110
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RFP2N10 HRISD017-4-601.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1323+0.51 EUR
Mindestbestellmenge: 1323
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RFP2N12 HRISD017-4-605.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
650+0.81 EUR
Mindestbestellmenge: 650
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RFP2N15 HRISD017-4-605.pdf?t.download=true&u=5oefqw
RFP2N15
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 2411 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
452+1.10 EUR
Mindestbestellmenge: 452
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RFP2N20 HRISD017-4-609.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1552 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
503+1.06 EUR
Mindestbestellmenge: 503
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RFP2P08 HRISD017-5-149.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
auf Bestellung 3542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1202+0.42 EUR
Mindestbestellmenge: 1202
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RFP2P10 HRISD017-5-149.pdf?t.download=true&u=5oefqw
RFP2P10
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 11516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
592+0.82 EUR
Mindestbestellmenge: 592
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RFP30N6LER4541
RFP30N6LER4541
Hersteller: Harris Corporation
Description: 30A, 60V, LOGIC LEVEL N CHANNEL
Packaging: Bulk
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
666+0.74 EUR
Mindestbestellmenge: 666
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RFP3N45 HRISD017-4-613.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RFP40N10S5001
RFP40N10S5001
Hersteller: Harris Corporation
Description: 40A, 100V, 0.04OHM, N CHANNEL, M
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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RFP42N03L HRISS497-1.pdf?t.download=true&u=5oefqw
RFP42N03L
Hersteller: Harris Corporation
Description: MOSFET N-CH 30V 42A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 42A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 63600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
243+2.01 EUR
Mindestbestellmenge: 243
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RFP45N02L HRISS551-1.pdf?t.download=true&u=5oefqw
RFP45N02L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 1871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
497+0.93 EUR
Mindestbestellmenge: 497
Im Einkaufswagen  Stück im Wert von  UAH
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