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RFD16N05SM9AS2480 Harris Corporation Description: 16A, 50V, 0.056OHM, N-CHANNEL,
auf Bestellung 975 Stücke:
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566+0.97 EUR
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RFD20N03 RFD20N03 Harris Corporation HRISSD05-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 10550 Stücke:
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505+0.9 EUR
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RFD20N03SM RFD20N03SM Harris Corporation HRISSD05-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 8441 Stücke:
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478+0.96 EUR
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RFD20N03SM9A RFD20N03SM9A Harris Corporation FAIRS43779-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
auf Bestellung 4911 Stücke:
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242+1.88 EUR
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RFD20N03SM9AR4761 Harris Corporation Description: MOSFET N-CH 30V 20A
Part Status: Active
Packaging: Bulk
auf Bestellung 2500 Stücke:
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466+0.97 EUR
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RFD3055RLESM9A Harris Corporation Description: 12A, 60V, 0.15OHM, N-CHANNEL,
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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RFD3055SM9AS2479 RFD3055SM9AS2479 Harris Corporation Description: 12A, 60V, 0.15OHM, N-CHANNEL,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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RFD3N08L Harris Corporation HRISD017-9-3.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 5V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 1346 Stücke:
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951+0.56 EUR
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RFD3N08LSM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: TO-252-3 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3A, 5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 2425 Stücke:
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833+0.63 EUR
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RFD4N06L Harris Corporation HRISD017-9-5.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 5V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 1424 Stücke:
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673+0.67 EUR
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RFD7N10LE RFD7N10LE Harris Corporation HRISSE58-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7A, 5V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 5942 Stücke:
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413+1.09 EUR
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RFD8P03LSM96 Harris Corporation Description: RFD8P03LSM96
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 1800 Stücke:
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392+1.29 EUR
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RFD8P05SM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3179 Stücke:
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325+1.48 EUR
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RFD8P05SM9AS2463 RFD8P05SM9AS2463 Harris Corporation Description: MOSFET P-CH 50V 8A
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
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650+0.74 EUR
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RFD8P06LE RFD8P06LE Harris Corporation HRISS694-1.pdf?t.download=true&u=5oefqw Description: 8A, 60V, 0.33OHM, P-CHANNEL POWE
Packaging: Bulk
Part Status: Active
auf Bestellung 1753 Stücke:
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626+0.73 EUR
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RFF70N06/3 RFF70N06/3 Harris Corporation Description: MOSFET N-CH 60V 25A
Packaging: Bulk
Part Status: Active
auf Bestellung 40 Stücke:
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5+87.36 EUR
Mindestbestellmenge: 5 Stücke
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RFG30P05 RFG30P05 Harris Corporation HRISD017-5-187.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 1617 Stücke:
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114+3.98 EUR
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RFG40N10 RFG40N10 Harris Corporation HRISS995-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
auf Bestellung 752 Stücke:
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173+2.64 EUR
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RFG40N10LE Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 489 Stücke:
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168+2.71 EUR
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RFG45N06 RFG45N06 Harris Corporation HRISD017-4-736.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 2175 Stücke:
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278+1.75 EUR
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RFG45N06LE Harris Corporation HRISS078-1.pdf?t.download=true&u=5oefqw Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
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RFG50N05 RFG50N05 Harris Corporation HRISD017-4-750.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250nA
Power Dissipation (Max): 132W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 145 Stücke:
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58+8.74 EUR
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RFG50N06LE RFG50N06LE Harris Corporation HRISS01274-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: TO-247
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Vgs(th) (Max) @ Id: 2V @ 250µA
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RFG75N05E Harris Corporation HRISD017-4-773.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 20 V
auf Bestellung 18160 Stücke:
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40+12.84 EUR
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RFH10N50 Harris Corporation HRISD017-4-645.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 302 Stücke:
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67+6.71 EUR
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RFH30N12 Harris Corporation HRISD017-4-715.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 268 Stücke:
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94+5.4 EUR
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RFH30N15 Harris Corporation HRISD017-4-715.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 1417 Stücke:
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77+6.3 EUR
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RFH45N05 Harris Corporation HRISD017-4-742.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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RFH75N05 RFH75N05 Harris Corporation TOCSS00198-1.pdf?t.download=true&u=5oefqw Description: 75A, 50V, 0.008OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-218 Isolated
Drain to Source Voltage (Vdss): 50 V
auf Bestellung 80 Stücke:
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80+7.5 EUR
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RFH75N05E Harris Corporation HRISD017-4-773.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RFIS30P06 Harris Corporation Description: MOSFET P-CH 60V 30A
Packaging: Bulk
auf Bestellung 1100 Stücke:
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201+2.52 EUR
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RFIS40N10LE Harris Corporation Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
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178+2.56 EUR
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RFIS70N06SM Harris Corporation Description: MOSFET N-CH 60V 70A
Packaging: Bulk
Part Status: Active
auf Bestellung 1000 Stücke:
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188+2.38 EUR
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RFL1N12 RFL1N12 Harris Corporation HRISSD53-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-205AF (TO-39)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
auf Bestellung 845 Stücke:
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233+1.96 EUR
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RFL1N15L RFL1N15L Harris Corporation HRISD017-6-23.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 1621 Stücke:
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180+2.83 EUR
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RFL4N15 RFL4N15 Harris Corporation HRISD017-4-621.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-205AF (TO-39)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
auf Bestellung 1187 Stücke:
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RFM10N15L Harris Corporation HRISD017-6-66.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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RFM10N45 Harris Corporation HRISD017-4-649.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Produkt ist nicht verfügbar
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RFM10N50 Harris Corporation HRISD017-4-649.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
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RFM12N10 Harris Corporation HRISD017-4-659.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Produkt ist nicht verfügbar
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RFM12P08 Harris Corporation HRISD017-5-174.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
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RFM12P10 Harris Corporation HRISD017-5-174.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
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RFM15N05L Harris Corporation HRISD017-6-84.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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RFM25N06 RFM25N06 Harris Corporation INSLS12273-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Power Dissipation (Max): 100W (Tc)
Produkt ist nicht verfügbar
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RFM3N45 RFM3N45 Harris Corporation HRISD017-4-613.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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RFM6P10 RFM6P10 Harris Corporation HRISD017-5-157.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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RFP10N12L RFP10N12L Harris Corporation HRISD017-6-66.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Supplier Device Package: TO-220-3
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
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RFP10N15101 RFP10N15101 Harris Corporation Description: 10A, 150V, 0.3OHM, N-CHANNEL, MO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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RFP10N15L RFP10N15L Harris Corporation HRISD017-6-66.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: TO-220-3
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 35079 Stücke:
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RFP10P12 RFP10P12 Harris Corporation HRISD017-5-170.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 300 Stücke:
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RFP10P15 RFP10P15 Harris Corporation HRISD017-5-170.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 75381 Stücke:
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RFP12N06RLE RFP12N06RLE Harris Corporation HRISD017-6-70.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
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RFP12N18 Harris Corporation HRISD017-4-663.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 1550 Stücke:
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RFP14N05P2 RFP14N05P2 Harris Corporation Description: 14A, 50V, 0.1OHM, N-CHANNEL, MOS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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RFP14N06L Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1085 Stücke:
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RFP15N05L RFP15N05L Harris Corporation FAIRS37150-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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RFP15N05L119 Harris Corporation Description: 15A, 50V, 0.14OHM, N-CHANNEL, MO
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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RFP15N06 RFP15N06 Harris Corporation HRISD017-4-680.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 27099 Stücke:
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RFP15N08L RFP15N08L Harris Corporation HRISD017-9-7.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 5V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 49688 Stücke:
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RFP15N12 RFP15N12 Harris Corporation HRISD017-4-686.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 10952 Stücke:
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260+1.94 EUR
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RFD16N05SM9AS2480
Hersteller: Harris Corporation
Description: 16A, 50V, 0.056OHM, N-CHANNEL,
auf Bestellung 975 Stücke:
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AnzahlPreis
566+0.97 EUR
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RFD20N03 HRISSD05-1.pdf?t.download=true&u=5oefqw
RFD20N03
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 10550 Stücke:
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AnzahlPreis
505+0.9 EUR
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RFD20N03SM HRISSD05-1.pdf?t.download=true&u=5oefqw
RFD20N03SM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 8441 Stücke:
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AnzahlPreis
478+0.96 EUR
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RFD20N03SM9A FAIRS43779-1.pdf?t.download=true&u=5oefqw
RFD20N03SM9A
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
auf Bestellung 4911 Stücke:
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242+1.88 EUR
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RFD20N03SM9AR4761
Hersteller: Harris Corporation
Description: MOSFET N-CH 30V 20A
Part Status: Active
Packaging: Bulk
auf Bestellung 2500 Stücke:
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AnzahlPreis
466+0.97 EUR
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RFD3055RLESM9A
Hersteller: Harris Corporation
Description: 12A, 60V, 0.15OHM, N-CHANNEL,
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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RFD3055SM9AS2479
RFD3055SM9AS2479
Hersteller: Harris Corporation
Description: 12A, 60V, 0.15OHM, N-CHANNEL,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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RFD3N08L HRISD017-9-3.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 5V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
951+0.56 EUR
Mindestbestellmenge: 951 Stücke
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RFD3N08LSM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: TO-252-3 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3A, 5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 2425 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
833+0.63 EUR
Mindestbestellmenge: 833 Stücke
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RFD4N06L HRISD017-9-5.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 5V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 1424 Stücke:
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AnzahlPreis
673+0.67 EUR
Mindestbestellmenge: 673 Stücke
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RFD7N10LE HRISSE58-1.pdf?t.download=true&u=5oefqw
RFD7N10LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7A, 5V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 5942 Stücke:
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AnzahlPreis
413+1.09 EUR
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RFD8P03LSM96
Hersteller: Harris Corporation
Description: RFD8P03LSM96
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 1800 Stücke:
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AnzahlPreis
392+1.29 EUR
Mindestbestellmenge: 392 Stücke
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RFD8P05SM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3179 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
325+1.48 EUR
Mindestbestellmenge: 325 Stücke
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RFD8P05SM9AS2463
RFD8P05SM9AS2463
Hersteller: Harris Corporation
Description: MOSFET P-CH 50V 8A
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
650+0.74 EUR
Mindestbestellmenge: 650 Stücke
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RFD8P06LE HRISS694-1.pdf?t.download=true&u=5oefqw
RFD8P06LE
Hersteller: Harris Corporation
Description: 8A, 60V, 0.33OHM, P-CHANNEL POWE
Packaging: Bulk
Part Status: Active
auf Bestellung 1753 Stücke:
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AnzahlPreis
626+0.73 EUR
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RFF70N06/3
RFF70N06/3
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 25A
Packaging: Bulk
Part Status: Active
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+87.36 EUR
Mindestbestellmenge: 5 Stücke
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RFG30P05 HRISD017-5-187.pdf?t.download=true&u=5oefqw
RFG30P05
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 1617 Stücke:
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AnzahlPreis
114+3.98 EUR
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RFG40N10 HRISS995-1.pdf?t.download=true&u=5oefqw
RFG40N10
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
auf Bestellung 752 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
173+2.64 EUR
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RFG40N10LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
168+2.71 EUR
Mindestbestellmenge: 168 Stücke
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RFG45N06 HRISD017-4-736.pdf?t.download=true&u=5oefqw
RFG45N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 2175 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
278+1.75 EUR
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RFG45N06LE HRISS078-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
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RFG50N05 HRISD017-4-750.pdf?t.download=true&u=5oefqw
RFG50N05
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250nA
Power Dissipation (Max): 132W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
58+8.74 EUR
Mindestbestellmenge: 58 Stücke
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RFG50N06LE HRISS01274-1.pdf?t.download=true&u=5oefqw
RFG50N06LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: TO-247
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Vgs(th) (Max) @ Id: 2V @ 250µA
Produkt ist nicht verfügbar
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RFG75N05E HRISD017-4-773.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 20 V
auf Bestellung 18160 Stücke:
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AnzahlPreis
40+12.84 EUR
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RFH10N50 HRISD017-4-645.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 302 Stücke:
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AnzahlPreis
67+6.71 EUR
Mindestbestellmenge: 67 Stücke
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RFH30N12 HRISD017-4-715.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
94+5.4 EUR
Mindestbestellmenge: 94 Stücke
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RFH30N15 HRISD017-4-715.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-218 Isolated
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 1417 Stücke:
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AnzahlPreis
77+6.3 EUR
Mindestbestellmenge: 77 Stücke
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RFH45N05 HRISD017-4-742.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RFH75N05 TOCSS00198-1.pdf?t.download=true&u=5oefqw
RFH75N05
Hersteller: Harris Corporation
Description: 75A, 50V, 0.008OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-218 Isolated
Drain to Source Voltage (Vdss): 50 V
auf Bestellung 80 Stücke:
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AnzahlPreis
80+7.5 EUR
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RFH75N05E HRISD017-4-773.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RFIS30P06
Hersteller: Harris Corporation
Description: MOSFET P-CH 60V 30A
Packaging: Bulk
auf Bestellung 1100 Stücke:
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AnzahlPreis
201+2.52 EUR
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RFIS40N10LE
Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
178+2.56 EUR
Mindestbestellmenge: 178 Stücke
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RFIS70N06SM
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 70A
Packaging: Bulk
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
188+2.38 EUR
Mindestbestellmenge: 188 Stücke
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RFL1N12 HRISSD53-1.pdf?t.download=true&u=5oefqw
RFL1N12
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-205AF (TO-39)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
233+1.96 EUR
Mindestbestellmenge: 233 Stücke
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RFL1N15L HRISD017-6-23.pdf?t.download=true&u=5oefqw
RFL1N15L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1621 Stücke:
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AnzahlPreis
180+2.83 EUR
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RFL4N15 HRISD017-4-621.pdf?t.download=true&u=5oefqw
RFL4N15
Hersteller: Harris Corporation
Description: SMALL SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-205AF (TO-39)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8.33W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
273+1.81 EUR
Mindestbestellmenge: 273 Stücke
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RFM10N15L HRISD017-6-66.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RFM10N45 HRISD017-4-649.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Produkt ist nicht verfügbar
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RFM10N50 HRISD017-4-649.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
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RFM12N10 HRISD017-4-659.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Produkt ist nicht verfügbar
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RFM12P08 HRISD017-5-174.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
163+2.8 EUR
Mindestbestellmenge: 163 Stücke
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RFM12P10 HRISD017-5-174.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
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RFM15N05L HRISD017-6-84.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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RFM25N06 INSLS12273-1.pdf?t.download=true&u=5oefqw
RFM25N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Power Dissipation (Max): 100W (Tc)
Produkt ist nicht verfügbar
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RFM3N45 HRISD017-4-613.pdf?t.download=true&u=5oefqw
RFM3N45
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Drain to Source Voltage (Vdss): 450 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
310+1.62 EUR
Mindestbestellmenge: 310 Stücke
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RFM6P10 HRISD017-5-157.pdf?t.download=true&u=5oefqw
RFM6P10
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 3064 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
188+2.42 EUR
Mindestbestellmenge: 188 Stücke
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RFP10N12L HRISD017-6-66.pdf?t.download=true&u=5oefqw
RFP10N12L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Supplier Device Package: TO-220-3
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
auf Bestellung 54904 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
259+1.94 EUR
Mindestbestellmenge: 259 Stücke
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RFP10N15101
RFP10N15101
Hersteller: Harris Corporation
Description: 10A, 150V, 0.3OHM, N-CHANNEL, MO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFP10N15L HRISD017-6-66.pdf?t.download=true&u=5oefqw
RFP10N15L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: TO-220-3
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 35079 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
342+1.45 EUR
Mindestbestellmenge: 342 Stücke
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RFP10P12 HRISD017-5-170.pdf?t.download=true&u=5oefqw
RFP10P12
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
300+1.87 EUR
Mindestbestellmenge: 300 Stücke
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RFP10P15 HRISD017-5-170.pdf?t.download=true&u=5oefqw
RFP10P15
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 75381 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
130+3.89 EUR
Mindestbestellmenge: 130 Stücke
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RFP12N06RLE HRISD017-6-70.pdf?t.download=true&u=5oefqw
RFP12N06RLE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
auf Bestellung 13334 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
503+0.99 EUR
Mindestbestellmenge: 503 Stücke
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RFP12N18 HRISD017-4-663.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
283+1.8 EUR
Mindestbestellmenge: 283 Stücke
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RFP14N05P2
RFP14N05P2
Hersteller: Harris Corporation
Description: 14A, 50V, 0.1OHM, N-CHANNEL, MOS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RFP14N06L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1085 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
568+0.79 EUR
Mindestbestellmenge: 568 Stücke
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RFP15N05L FAIRS37150-1.pdf?t.download=true&u=5oefqw
RFP15N05L
Hersteller: Harris Corporation
Description: MOSFET N-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
404+1.55 EUR
Mindestbestellmenge: 404 Stücke
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RFP15N05L119
Hersteller: Harris Corporation
Description: 15A, 50V, 0.14OHM, N-CHANNEL, MO
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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RFP15N06 HRISD017-4-680.pdf?t.download=true&u=5oefqw
RFP15N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 27099 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
560+0.88 EUR
Mindestbestellmenge: 560 Stücke
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RFP15N08L HRISD017-9-7.pdf?t.download=true&u=5oefqw
RFP15N08L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 5V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 49688 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
485+0.98 EUR
Mindestbestellmenge: 485 Stücke
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RFP15N12 HRISD017-4-686.pdf?t.download=true&u=5oefqw
RFP15N12
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 10952 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
260+1.94 EUR
Mindestbestellmenge: 260 Stücke
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