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IPDQ60R017S7XTMA1 IPDQ60R017S7XTMA1 Infineon Technologies Infineon-IPDQ60R017S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc5a686818 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
auf Bestellung 686 Stücke:
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1+20.96 EUR
10+17.69 EUR
100+15.29 EUR
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IPDQ60R040S7AXTMA1 IPDQ60R040S7AXTMA1 Infineon Technologies Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ60R040S7AXTMA1 IPDQ60R040S7AXTMA1 Infineon Technologies Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 720 Stücke:
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10+9.98 EUR
100+7.37 EUR
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IPDQ60R045CFD7XTMA1 IPDQ60R045CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
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2+12.09 EUR
10+9.33 EUR
25+8.64 EUR
100+7.88 EUR
250+7.52 EUR
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IPDQ60R075CFD7XTMA1 IPDQ60R075CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465868a09094e Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
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10+6.59 EUR
25+6.07 EUR
100+5.51 EUR
250+5.24 EUR
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IPDQ65R060CFD7XTMA1 IPDQ65R060CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R125CFD7XTMA1 IPDQ65R125CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R125CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186e4089b4677d5 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R029CFD7XTMA1 IPDQ65R029CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R029CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047429d71e3 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R017CFD7XTMA1 IPDQ65R017CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R017CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047325971e0 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R040CFD7XTMA1 IPDQ65R040CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R040CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff5dfe7788 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Produkt ist nicht verfügbar
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TLE5014SP16DE0002XUMA1 TLE5014SP16DE0002XUMA1 Infineon Technologies Infineon-TLE5014SP16D+E0002-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c92e1bc10212 Description: POSITION&CURRENT SENSORS
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 2073 Stücke:
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2+15.80 EUR
10+10.89 EUR
100+9.08 EUR
Mindestbestellmenge: 2
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DF14MR12W1M1HFB67BPSA1 DF14MR12W1M1HFB67BPSA1 Infineon Technologies DF14MR12W1M1HF_B67_DS.pdf Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 24 Stücke:
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1+114.44 EUR
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IR2133STRPBF IR2133STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
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1000+2.98 EUR
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IR2133STRPBF IR2133STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1547 Stücke:
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4+5.37 EUR
10+4.04 EUR
25+3.71 EUR
100+3.34 EUR
250+3.17 EUR
500+3.06 EUR
Mindestbestellmenge: 4
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FM33256B-G FM33256B-G Infineon Technologies Infineon-FM33256B_256-Kbit_(32_K_8)_Integrated_Processor_Companion_with_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec926014192 Description: IC PROCESSOR COMPANION 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY15V104QN-50LPXIT Infineon Technologies Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a Description: IC FRAM 4MBIT SPI 50MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD60R180P7SE8228AUMA1 IPD60R180P7SE8228AUMA1 Infineon Technologies Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Produkt ist nicht verfügbar
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IPA70R360P7SXKSA1 IPA70R360P7SXKSA1 Infineon Technologies Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77 Description: MOSFET N-CH 700V 12.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
auf Bestellung 311 Stücke:
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6+2.94 EUR
50+1.40 EUR
100+1.25 EUR
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S6E2C39H0AGV2000A S6E2C39H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFS4010 AUIRFS4010 Infineon Technologies auirfs4010.pdf?fileId=5546d462533600a4015355b6a9e114c3 Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Produkt ist nicht verfügbar
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MB91306RPFV-G-SNE1 Infineon Technologies Description: IC ANALOG
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 66MHz
RAM Size: 64K x 8
Operating Temperature: 0°C ~ 70°C
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: FR60 RISC
Data Converters: A/D 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V, 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY15V108QI-20LPXIT Infineon Technologies Infineon-CY15B108QI_CY15V108QI_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee73ee37021 Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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IKCM20L60GAXKMA1 IKCM20L60GAXKMA1 Infineon Technologies Infineon-IKCM20L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb7a6f8e7902 Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
auf Bestellung 38 Stücke:
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1+20.89 EUR
14+16.02 EUR
28+15.24 EUR
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IKCM15L60GAXKMA1 IKCM15L60GAXKMA1 Infineon Technologies Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7 Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IKCM10L60GAXKMA1 IKCM10L60GAXKMA1 Infineon Technologies Infineon-IKCM10L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb3a61b278a2 Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
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IPP60R280CFD7XKSA1 IPP60R280CFD7XKSA1 Infineon Technologies Infineon-IPP60R280CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea850969a78ae Description: MOSFET N-CH 650V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
auf Bestellung 288 Stücke:
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IPB120N10S403ATMA1 IPB120N10S403ATMA1 Infineon Technologies IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB120N10S403ATMA1 IPB120N10S403ATMA1 Infineon Technologies IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 728 Stücke:
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IPP120N10S405AKSA1 IPP120N10S405AKSA1 Infineon Technologies IPP_B_I120N10S4-05-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480cf161070b67 Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CY91F579CHSPMC1-GSE1 CY91F579CHSPMC1-GSE1 Infineon Technologies download Description: IC MCU 32B 2.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 144K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (16x16)
Part Status: Last Time Buy
Number of I/O: 111
DigiKey Programmable: Not Verified
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CY8C4A45FNI-483T Infineon Technologies Infineon-PSoC_Analog_Coprocessor_CY8C4AXX_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0f3a166b1 Description: IC MCU 32BIT 32KB FLASH 45WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 45-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 45-WLCSP (1.99x3.69)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
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CY3213-8SOIC Infineon Technologies Description: KIT FLEX POD FOR CY8C21123
For Use With/Related Products: CY3215-DK, CY8C21123-24SXI
Accessory Type: Emulator Flex Pod Kit
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY3250-8SOIC-FK CY3250-8SOIC-FK Infineon Technologies Description: PSOC POD FEET FOR 8-SOIC
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C21123-24SXI, CY8C24123A-24SXI
Accessory Type: 4 Emulation Pods
Part Status: Obsolete
Utilized IC / Part: CY3215-DK, CY8C21123-24SXI, CY8C24123A-24SXI
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CY3230-8SOIC-AK CY3230-8SOIC-AK Infineon Technologies Description: KIT FOOT FOR 8-SOIC
For Use With/Related Products: CY3215-DK, CY8C21123-24SXI
Accessory Type: Emulator Foot Kit
Part Status: Obsolete
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CY3211-28PDIP Infineon Technologies Description: KIT FLEX POD FOR CY8C29X 28-DIP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C29466-24PXI
Accessory Type: Emulator Flex Pod Kit
Part Status: Active
Utilized IC / Part: CY3215-DK, CY8C29466-24PXI
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CY3211-28SOIC CY3211-28SOIC Infineon Technologies Description: KIT FLEX POD FOR CY8C29X 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C29466-24SXI
Accessory Type: Emulator Flex Pod Kit
Part Status: Active
Utilized IC / Part: CY3215-DK, CY8C29466-24SXI
Produkt ist nicht verfügbar
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CY3211-28SSOP Infineon Technologies Description: KIT FLEX POD FOR CY8C29X 28-SSOP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C29466-24PVXI
Accessory Type: Emulator Flex Pod Kit
Part Status: Active
Utilized IC / Part: CY3215-DK, CY8C29466-24PVXI
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CY90351ESPMC-GS-258E1 CY90351ESPMC-GS-258E1 Infineon Technologies Description: IC MCU 16BIT 64KB MROM 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
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CY90922NCSPMC-GS-258E1-ND CY90922NCSPMC-GS-258E1-ND Infineon Technologies Description: IC MCU 16BIT 256KB MROM 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 93
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDH12G65C6XKSA1 IDH12G65C6XKSA1 Infineon Technologies Infineon-IDH12G65C6-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cd4b8049d2de5 Description: DIODE SIL CARB 650V 27A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
auf Bestellung 268 Stücke:
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3+8.50 EUR
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IDH12G65C5XKSA2 IDH12G65C5XKSA2 Infineon Technologies Infineon-IDH12G65C5-DS-v02_02-en.pdf?fileId=db3a30433a047ba0013a06bcacb10185 Description: DIODE SIL CARB 650V 12A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
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IDH12SG60CXKSA2 IDH12SG60CXKSA2 Infineon Technologies Infineon-IDH12SG60C-DS-v02_03-en.pdf?fileId=db3a30431f848401011fad82e993468c Description: DIODE SIL CARB 600V 12A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 531 Stücke:
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FP75R12KT4B15BOSA1 FP75R12KT4B15BOSA1 Infineon Technologies Infineon-FP75R12KT4_B15-DS-v02_00-en_de.pdf?fileId=db3a30431ed1d7b2011f47233ba556da Description: IGBT MOD 1200V 75A 385W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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CY8C4244FNI-443T CY8C4244FNI-443T Infineon Technologies Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (3.23x2.10)
Part Status: Active
Number of I/O: 31
DigiKey Programmable: Not Verified
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BGSA149MN10E6327XTSA1 BGSA149MN10E6327XTSA1 Infineon Technologies Infineon-BGSA149MN10-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa4fe796d9a Description: IC RF SWITCH ANTENNA DEVICE
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 10-XFQFN
Impedance: 1.5Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 380MHz ~ 7.125GHz
Supplier Device Package: PG-TSNP-10-9
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BGSA149MN10E6327XTSA1 BGSA149MN10E6327XTSA1 Infineon Technologies Infineon-BGSA149MN10-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa4fe796d9a Description: IC RF SWITCH ANTENNA DEVICE
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 10-XFQFN
Impedance: 1.5Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 380MHz ~ 7.125GHz
Supplier Device Package: PG-TSNP-10-9
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18+1.02 EUR
20+0.90 EUR
25+0.82 EUR
100+0.72 EUR
250+0.63 EUR
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1000+0.44 EUR
5000+0.39 EUR
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BGSA148MN10E6327XTSA1 BGSA148MN10E6327XTSA1 Infineon Technologies Infineon-BGSA148MN10-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185df9bd0966d97 Description: IC RF SWITCH SPST ANTENNA TUNER
Packaging: Tape & Reel (TR)
Part Status: Active
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BGSA148MN10E6327XTSA1 BGSA148MN10E6327XTSA1 Infineon Technologies Infineon-BGSA148MN10-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185df9bd0966d97 Description: IC RF SWITCH SPST ANTENNA TUNER
Packaging: Cut Tape (CT)
Part Status: Active
Produkt ist nicht verfügbar
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BGSA144ML10XTSA1 Infineon Technologies Description: IC RF SWITCH ANTENNA DEVICE
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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CY9AF111MAPMC-GNE2 CY9AF111MAPMC-GNE2 Infineon Technologies Infineon-CY9A110A_CY9A110_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb Description: IC MCU 32BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 66
DigiKey Programmable: Not Verified
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2+13.09 EUR
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357+8.08 EUR
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S25HS512TDPBHI010 S25HS512TDPBHI010 Infineon Technologies 002-12345_rev-AF.pdf Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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2+15.98 EUR
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100+13.69 EUR
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CY7C199D-10VXIT CY7C199D-10VXIT Infineon Technologies Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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1000+3.37 EUR
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CY7C199D-10VXIT CY7C199D-10VXIT Infineon Technologies Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Cut Tape (CT)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1695 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.12 EUR
10+3.84 EUR
25+3.73 EUR
50+3.64 EUR
100+3.56 EUR
250+3.44 EUR
500+3.36 EUR
Mindestbestellmenge: 5
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CY9AF111LAPMC1-G-MNE2 CY9AF111LAPMC1-G-MNE2 Infineon Technologies Infineon-CY9AF111L_M_N_CY9AF112L_M_N_CY9AF114L_M_N_CY9AF115M_N_CY9AF116M_N_32-bit_Arm_Cortex_-M3_FM3_Microcontroller_Datasheet-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.52 EUR
10+8.09 EUR
25+7.48 EUR
160+6.64 EUR
320+6.42 EUR
640+6.24 EUR
1120+6.12 EUR
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CY7C2263KV18-450BZXI CY7C2263KV18-450BZXI Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 331 Stücke:
Lieferzeit 10-14 Tag (e)
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CY7C2263KV18-450BZXI CY7C2263KV18-450BZXI Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1911KV18-333BZC CY7C1911KV18-333BZC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 9
DigiKey Programmable: Not Verified
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
9+54.78 EUR
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CY7C2263KV18-550BZXI CY7C2263KV18-550BZXI Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C2263KV18-550BZXI CY7C2263KV18-550BZXI Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C2170KV18-400BZXC CY7C2170KV18-400BZXC Infineon Technologies Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_ Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 442 Stücke:
Lieferzeit 10-14 Tag (e)
8+63.44 EUR
Mindestbestellmenge: 8
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IPDQ60R017S7XTMA1 Infineon-IPDQ60R017S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc5a686818
IPDQ60R017S7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
auf Bestellung 686 Stücke:
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Anzahl Preis
1+20.96 EUR
10+17.69 EUR
100+15.29 EUR
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IPDQ60R040S7AXTMA1 Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821
IPDQ60R040S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ60R040S7AXTMA1 Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821
IPDQ60R040S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.59 EUR
10+9.98 EUR
100+7.37 EUR
Mindestbestellmenge: 2
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IPDQ60R045CFD7XTMA1 Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd
IPDQ60R045CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.09 EUR
10+9.33 EUR
25+8.64 EUR
100+7.88 EUR
250+7.52 EUR
Mindestbestellmenge: 2
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IPDQ60R075CFD7XTMA1 Infineon-IPDQ60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465868a09094e
IPDQ60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.64 EUR
10+6.59 EUR
25+6.07 EUR
100+5.51 EUR
250+5.24 EUR
Mindestbestellmenge: 3
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IPDQ65R060CFD7XTMA1 Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b
IPDQ65R060CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R125CFD7XTMA1 Infineon-IPDQ65R125CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186e4089b4677d5
IPDQ65R125CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R029CFD7XTMA1 Infineon-IPDQ65R029CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047429d71e3
IPDQ65R029CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R017CFD7XTMA1 Infineon-IPDQ65R017CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047325971e0
IPDQ65R017CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R040CFD7XTMA1 Infineon-IPDQ65R040CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff5dfe7788
IPDQ65R040CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Produkt ist nicht verfügbar
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TLE5014SP16DE0002XUMA1 Infineon-TLE5014SP16D+E0002-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c92e1bc10212
TLE5014SP16DE0002XUMA1
Hersteller: Infineon Technologies
Description: POSITION&CURRENT SENSORS
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 2073 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.80 EUR
10+10.89 EUR
100+9.08 EUR
Mindestbestellmenge: 2
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DF14MR12W1M1HFB67BPSA1 DF14MR12W1M1HF_B67_DS.pdf
DF14MR12W1M1HFB67BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+114.44 EUR
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IR2133STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.98 EUR
Mindestbestellmenge: 1000
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IR2133STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.37 EUR
10+4.04 EUR
25+3.71 EUR
100+3.34 EUR
250+3.17 EUR
500+3.06 EUR
Mindestbestellmenge: 4
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FM33256B-G Infineon-FM33256B_256-Kbit_(32_K_8)_Integrated_Processor_Companion_with_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec926014192
FM33256B-G
Hersteller: Infineon Technologies
Description: IC PROCESSOR COMPANION 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY15V104QN-50LPXIT Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a
Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT SPI 50MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD60R180P7SE8228AUMA1
IPD60R180P7SE8228AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Produkt ist nicht verfügbar
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IPA70R360P7SXKSA1 Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77
IPA70R360P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 12.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
auf Bestellung 311 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
50+1.40 EUR
100+1.25 EUR
Mindestbestellmenge: 6
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S6E2C39H0AGV2000A download
S6E2C39H0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFS4010 auirfs4010.pdf?fileId=5546d462533600a4015355b6a9e114c3
AUIRFS4010
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Produkt ist nicht verfügbar
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MB91306RPFV-G-SNE1
Hersteller: Infineon Technologies
Description: IC ANALOG
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 66MHz
RAM Size: 64K x 8
Operating Temperature: 0°C ~ 70°C
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: FR60 RISC
Data Converters: A/D 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V, 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY15V108QI-20LPXIT Infineon-CY15B108QI_CY15V108QI_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee73ee37021
Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IKCM20L60GAXKMA1 Infineon-IKCM20L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb7a6f8e7902
IKCM20L60GAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.89 EUR
14+16.02 EUR
28+15.24 EUR
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IKCM15L60GAXKMA1 Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7
IKCM15L60GAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IKCM10L60GAXKMA1 Infineon-IKCM10L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb3a61b278a2
IKCM10L60GAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IPP60R280CFD7XKSA1 Infineon-IPP60R280CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea850969a78ae
IPP60R280CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
50+2.23 EUR
100+2.10 EUR
Mindestbestellmenge: 4
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IPB120N10S403ATMA1 IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a
IPB120N10S403ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB120N10S403ATMA1 IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a
IPB120N10S403ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.41 EUR
10+5.03 EUR
100+3.58 EUR
500+2.96 EUR
Mindestbestellmenge: 3
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IPP120N10S405AKSA1 IPP_B_I120N10S4-05-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480cf161070b67
IPP120N10S405AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY91F579CHSPMC1-GSE1 download
CY91F579CHSPMC1-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 144K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (16x16)
Part Status: Last Time Buy
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4A45FNI-483T Infineon-PSoC_Analog_Coprocessor_CY8C4AXX_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0f3a166b1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 45WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 45-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 45-WLCSP (1.99x3.69)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3213-8SOIC
Hersteller: Infineon Technologies
Description: KIT FLEX POD FOR CY8C21123
For Use With/Related Products: CY3215-DK, CY8C21123-24SXI
Accessory Type: Emulator Flex Pod Kit
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY3250-8SOIC-FK
CY3250-8SOIC-FK
Hersteller: Infineon Technologies
Description: PSOC POD FEET FOR 8-SOIC
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C21123-24SXI, CY8C24123A-24SXI
Accessory Type: 4 Emulation Pods
Part Status: Obsolete
Utilized IC / Part: CY3215-DK, CY8C21123-24SXI, CY8C24123A-24SXI
Produkt ist nicht verfügbar
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CY3230-8SOIC-AK
CY3230-8SOIC-AK
Hersteller: Infineon Technologies
Description: KIT FOOT FOR 8-SOIC
For Use With/Related Products: CY3215-DK, CY8C21123-24SXI
Accessory Type: Emulator Foot Kit
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY3211-28PDIP
Hersteller: Infineon Technologies
Description: KIT FLEX POD FOR CY8C29X 28-DIP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C29466-24PXI
Accessory Type: Emulator Flex Pod Kit
Part Status: Active
Utilized IC / Part: CY3215-DK, CY8C29466-24PXI
Produkt ist nicht verfügbar
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CY3211-28SOIC
CY3211-28SOIC
Hersteller: Infineon Technologies
Description: KIT FLEX POD FOR CY8C29X 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C29466-24SXI
Accessory Type: Emulator Flex Pod Kit
Part Status: Active
Utilized IC / Part: CY3215-DK, CY8C29466-24SXI
Produkt ist nicht verfügbar
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CY3211-28SSOP
Hersteller: Infineon Technologies
Description: KIT FLEX POD FOR CY8C29X 28-SSOP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C29466-24PVXI
Accessory Type: Emulator Flex Pod Kit
Part Status: Active
Utilized IC / Part: CY3215-DK, CY8C29466-24PVXI
Produkt ist nicht verfügbar
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CY90351ESPMC-GS-258E1
CY90351ESPMC-GS-258E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90922NCSPMC-GS-258E1-ND
CY90922NCSPMC-GS-258E1-ND
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB MROM 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 93
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDH12G65C6XKSA1 Infineon-IDH12G65C6-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cd4b8049d2de5
IDH12G65C6XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 27A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.50 EUR
50+4.43 EUR
100+4.04 EUR
Mindestbestellmenge: 3
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IDH12G65C5XKSA2 Infineon-IDH12G65C5-DS-v02_02-en.pdf?fileId=db3a30433a047ba0013a06bcacb10185
IDH12G65C5XKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 12A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.01 EUR
50+4.71 EUR
100+4.30 EUR
500+3.57 EUR
Mindestbestellmenge: 2
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IDH12SG60CXKSA2 Infineon-IDH12SG60C-DS-v02_03-en.pdf?fileId=db3a30431f848401011fad82e993468c
IDH12SG60CXKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 12A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 531 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.79 EUR
50+6.18 EUR
100+5.80 EUR
500+4.85 EUR
Mindestbestellmenge: 2
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FP75R12KT4B15BOSA1 Infineon-FP75R12KT4_B15-DS-v02_00-en_de.pdf?fileId=db3a30431ed1d7b2011f47233ba556da
FP75R12KT4B15BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 75A 385W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+162.87 EUR
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CY8C4244FNI-443T Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4244FNI-443T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (3.23x2.10)
Part Status: Active
Number of I/O: 31
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGSA149MN10E6327XTSA1 Infineon-BGSA149MN10-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa4fe796d9a
BGSA149MN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH ANTENNA DEVICE
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 10-XFQFN
Impedance: 1.5Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 380MHz ~ 7.125GHz
Supplier Device Package: PG-TSNP-10-9
Produkt ist nicht verfügbar
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BGSA149MN10E6327XTSA1 Infineon-BGSA149MN10-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185dfa4fe796d9a
BGSA149MN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH ANTENNA DEVICE
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 10-XFQFN
Impedance: 1.5Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 380MHz ~ 7.125GHz
Supplier Device Package: PG-TSNP-10-9
auf Bestellung 11949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
20+0.90 EUR
25+0.82 EUR
100+0.72 EUR
250+0.63 EUR
500+0.55 EUR
1000+0.44 EUR
5000+0.39 EUR
Mindestbestellmenge: 18
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BGSA148MN10E6327XTSA1 Infineon-BGSA148MN10-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185df9bd0966d97
BGSA148MN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPST ANTENNA TUNER
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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BGSA148MN10E6327XTSA1 Infineon-BGSA148MN10-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185df9bd0966d97
BGSA148MN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPST ANTENNA TUNER
Packaging: Cut Tape (CT)
Part Status: Active
Produkt ist nicht verfügbar
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BGSA144ML10XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH ANTENNA DEVICE
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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CY9AF111MAPMC-GNE2 Infineon-CY9A110A_CY9A110_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb
CY9AF111MAPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 66
DigiKey Programmable: Not Verified
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.09 EUR
10+10.14 EUR
25+9.41 EUR
119+8.51 EUR
357+8.08 EUR
595+7.92 EUR
Mindestbestellmenge: 2
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S25HS512TDPBHI010 002-12345_rev-AF.pdf
S25HS512TDPBHI010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 328 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.98 EUR
10+14.84 EUR
25+14.38 EUR
50+14.03 EUR
100+13.69 EUR
Mindestbestellmenge: 2
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CY7C199D-10VXIT Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C199D-10VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.37 EUR
Mindestbestellmenge: 1000
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CY7C199D-10VXIT Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C199D-10VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Cut Tape (CT)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.12 EUR
10+3.84 EUR
25+3.73 EUR
50+3.64 EUR
100+3.56 EUR
250+3.44 EUR
500+3.36 EUR
Mindestbestellmenge: 5
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CY9AF111LAPMC1-G-MNE2 Infineon-CY9AF111L_M_N_CY9AF112L_M_N_CY9AF114L_M_N_CY9AF115M_N_CY9AF116M_N_32-bit_Arm_Cortex_-M3_FM3_Microcontroller_Datasheet-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eddff4562bb
CY9AF111LAPMC1-G-MNE2
Hersteller: Infineon Technologies
Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.52 EUR
10+8.09 EUR
25+7.48 EUR
160+6.64 EUR
320+6.42 EUR
640+6.24 EUR
1120+6.12 EUR
Mindestbestellmenge: 2
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CY7C2263KV18-450BZXI Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2263KV18-450BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 331 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.56 EUR
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CY7C2263KV18-450BZXI Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2263KV18-450BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1911KV18-333BZC download
CY7C1911KV18-333BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 9
DigiKey Programmable: Not Verified
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+54.78 EUR
Mindestbestellmenge: 9
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CY7C2263KV18-550BZXI Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2263KV18-550BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C2263KV18-550BZXI Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2263KV18-550BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C2170KV18-400BZXC Infineon-CY7C2168KV18_CY7C2170KV18_18-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2014936e0&utm_source=cypress&utm_medium=referral&utm_
CY7C2170KV18-400BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+63.44 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
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