Foto | Bezeichnung | Hersteller | Beschreibung |
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IS43TR82560B-125KBL-TR | ISSI |
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Produkt ist nicht verfügbar |
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IS43TR82560BL-125KBLI-TR | ISSI |
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Produkt ist nicht verfügbar |
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IS25LE512M-RMLE-TY | ISSI | 512Mb QPI/QSPI, 16-pin SOP 300Mil, RoHS, dedicated reset pin, ECC, Tray |
Produkt ist nicht verfügbar |
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IS27TH064G21-JCLI | ISSI |
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Produkt ist nicht verfügbar |
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IS22TF64G-JCLA1 | ISSI |
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Produkt ist nicht verfügbar |
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IS42S32800G-6BI-TR | ISSI |
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Produkt ist nicht verfügbar |
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IS42S32200L-5TL-TR | ISSI |
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Produkt ist nicht verfügbar |
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IS42S32200N-6TLI-TR | ISSI |
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Produkt ist nicht verfügbar |
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IS42S32400J-6TLI | ISSI |
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Produkt ist nicht verfügbar |
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IS42S32200N-7TLI-TR | ISSI |
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Produkt ist nicht verfügbar |
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IS42S32400J-6BL-TR | ISSI |
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Produkt ist nicht verfügbar |
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IS42S32400J-6BL | ISSI |
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Produkt ist nicht verfügbar |
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IS42S16800J-6TLI-TR | ISSI |
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Produkt ist nicht verfügbar |
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IS42S16400N-5BLI | ISSI |
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Produkt ist nicht verfügbar |
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IS42S16160L-7BLI | ISSI |
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Produkt ist nicht verfügbar |
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IS42S32800J-75ETL-TR | ISSI |
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Produkt ist nicht verfügbar |
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IS42S32800L-6TL | ISSI |
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Produkt ist nicht verfügbar |
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IS42S32800J-6BI | ISSI |
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Produkt ist nicht verfügbar |
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IS42S32800J-6BI-TR | ISSI |
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Produkt ist nicht verfügbar |
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IS42S16800J-7BL-TR | ISSI |
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Produkt ist nicht verfügbar |
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637008103A | ISSI | PPAP IS25LQ010B-JULA3-TR |
Produkt ist nicht verfügbar |
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IS45S16400J-6BLA1 | ISSI |
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auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) |
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IS43DR16640B-3DBLI | ISSI |
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Produkt ist nicht verfügbar |
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IS61LPS204836B-166TQLI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 3.3V Access time: 3.8ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
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IS61VPS204836B-250B3L | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 2.5V Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
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IS61VPS204836B-250B3LI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 2.5V Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61VVPS204818B-166B3LI | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 1.8V Access time: 3.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61LPS51218B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
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IS61LPS51218B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61NLP51218B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61NLP51218B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 512kx18bit Memory: 9Mb SRAM Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61NLP102418B-200B3L | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: 0...70°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61NLP102418B-200B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61NLP102418B-200B3LI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Kind of interface: parallel Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61NLP102418B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61NLP102418B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel Kind of interface: parallel Case: QFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3ns Operating voltage: 3.3V Memory organisation: 1Mx18bit Memory: 18Mb SRAM Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IS61NLP204818B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel Kind of interface: parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IS61NVP204818B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel Kind of interface: parallel Case: TQFP100 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 2.5V Memory organisation: 2Mx18bit Memory: 36Mb SRAM Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IS61WV25616BLS-25TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSOP44 II Operating temperature: -40...85°C Access time: 25ns Operating voltage: 2.4...3.6V Memory organisation: 256kx16bit Memory: 4Mb SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61WV25616BLS-25TLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSOP44 II Operating temperature: -40...85°C Access time: 25ns Operating voltage: 2.4...3.6V Memory organisation: 256kx16bit Memory: 4Mb SRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IS62WV51216BLL-55TLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 3.3V Mounting: SMD Case: TSOP44 Kind of interface: parallel Access time: 55ns |
auf Bestellung 2943 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C25616AL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel Operating voltage: 5V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx16bit Access time: 10ns Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...85°C Case: TSOP44 II |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61QDPB42M36A1-500M3LI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IS42S16400J-5TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S16400J-6TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S16400J-6TLI | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC Part status: Not recommended for new designs |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S16400J-7TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S32200L-6TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II Clock frequency: 166MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 512kx32bitx4 Kind of interface: parallel Mounting: SMD Access time: 6ns |
auf Bestellung 173 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S32200L-7TL | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Clock frequency: 143MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 512kx32bitx4 Kind of interface: parallel Mounting: SMD Access time: 7ns |
auf Bestellung 283 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S32200L-7TLI | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II Clock frequency: 143MHz Memory: 64Mb DRAM Supply voltage: 3.3V DC Operating temperature: -40...85°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 512kx32bitx4 Kind of interface: parallel Mounting: SMD Access time: 7ns |
auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S32400F-6TL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube Clock frequency: 166MHz Memory: 128Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP86 II Kind of package: tube Memory organisation: 4Mx32bit Kind of interface: parallel Mounting: SMD Access time: 6ns |
auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) |
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IS62WV5128BLL-55T2LI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx8bit Access time: 55ns Kind of interface: parallel Memory: 4Mb SRAM Operating temperature: -40...85°C Case: TSOP32 II Operating voltage: 2.5...3.6V |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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IS62WV51216ALL-70BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS62WV51216BLL-55BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS62WV51216EALL-55BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS62WV51216EBLL-45BLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS62WV51216ALL-70BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS62WV51216BLL-55BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS62WV51216EBLL-45BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS29GL256-70DLEB | ISSI |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: LFBGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 70ns Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IS43TR82560B-125KBL-TR |
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Hersteller: ISSI
DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin TW-BGA T/R
DRAM Chip DDR3 SDRAM 2Gbit 256Mx8 1.5V 78-Pin TW-BGA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43TR82560BL-125KBLI-TR |
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Hersteller: ISSI
256Mx8, 128Mx16 2Gb DDR3 SDRAM
256Mx8, 128Mx16 2Gb DDR3 SDRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS25LE512M-RMLE-TY |
Hersteller: ISSI
512Mb QPI/QSPI, 16-pin SOP 300Mil, RoHS, dedicated reset pin, ECC, Tray
512Mb QPI/QSPI, 16-pin SOP 300Mil, RoHS, dedicated reset pin, ECC, Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS27TH064G21-JCLI |
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Hersteller: ISSI
64GB, 153 Ball FBGA, 3.3V, RoHS
64GB, 153 Ball FBGA, 3.3V, RoHS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS22TF64G-JCLA1 |
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Hersteller: ISSI
64GB, Managed NAND Flash e-MMC Automotive AEC-Q100
64GB, Managed NAND Flash e-MMC Automotive AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S32800G-6BI-TR |
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Hersteller: ISSI
DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 90-Pin TFBGA T/R
DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 90-Pin TFBGA T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S32200L-5TL-TR |
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Hersteller: ISSI
DRAMChip SDRAM 64Mbit 2Mx32 3.3V 86-Pin TSOP-II T/R
DRAMChip SDRAM 64Mbit 2Mx32 3.3V 86-Pin TSOP-II T/R
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S32200N-6TLI-TR |
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Hersteller: ISSI
64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R
64M, 3.3V, SDRAM, 2Mx32, 166Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S32400J-6TLI |
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Hersteller: ISSI
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 86-Pin TSOP-II
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 86-Pin TSOP-II
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S32200N-7TLI-TR |
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Hersteller: ISSI
64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R
64M, 3.3V, SDRAM, 2Mx32, 143Mhz, 86 pin TSOP II (400 mil) RoHS, IT, T&R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S32400J-6BL-TR |
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Hersteller: ISSI
128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R
128M, 3.3V, SDRAM, 4Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S32400J-6BL |
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Hersteller: ISSI
DRAMChip SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA
DRAMChip SDRAM 128Mbit 4Mx32 3.3V 90-Pin TFBGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16800J-6TLI-TR |
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Hersteller: ISSI
128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 pin TSOP II (400 mil) RoHS, IT, T&R
128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 pin TSOP II (400 mil) RoHS, IT, T&R
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16400N-5BLI |
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Hersteller: ISSI
Synchronous Dynamic Ram
Synchronous Dynamic Ram
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S16160L-7BLI |
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Hersteller: ISSI
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S32800J-75ETL-TR |
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Hersteller: ISSI
8M X 32 256Mb Synchronous DRAM
8M X 32 256Mb Synchronous DRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S32800L-6TL |
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Hersteller: ISSI
256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS
256M, 3.3V, SDRAM, 8Mx32, 166Mhz, 86 pin TSOP II RoHS
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S32800J-6BI |
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Hersteller: ISSI
8M X 32 256MB SYNCHRONOUS DRAM
8M X 32 256MB SYNCHRONOUS DRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S32800J-6BI-TR |
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Hersteller: ISSI
8M X 32 256MB Synchronous DRAM
8M X 32 256MB Synchronous DRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16800J-7BL-TR |
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Hersteller: ISSI
128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 ball BGA (8mmx8mm) ROHS, T&R
128M, 3.3V, SDRAM, 8Mx16, 143Mhz, 54 ball BGA (8mmx8mm) ROHS, T&R
Produkt ist nicht verfügbar
Im Einkaufswagen
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637008103A |
Hersteller: ISSI
PPAP IS25LQ010B-JULA3-TR
PPAP IS25LQ010B-JULA3-TR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS45S16400J-6BLA1 |
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Hersteller: ISSI
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V Automotive AEC-Q100 54-Pin TFBGA
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V Automotive AEC-Q100 54-Pin TFBGA
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IS43DR16640B-3DBLI |
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Hersteller: ISSI
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin TW-BGA
DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin TW-BGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LPS204836B-166TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 3.3V
Access time: 3.8ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 3.3V
Access time: 3.8ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61VPS204836B-250B3L |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61VPS204836B-250B3LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61VVPS204818B-166B3LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Access time: 3.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Access time: 3.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LPS51218B-200TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LPS51218B-200TQLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLP51218B-200TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLP51218B-200TQLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 512kx18bit
Memory: 9Mb SRAM
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLP102418B-200B3L |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLP102418B-200B3LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLP102418B-200B3LI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel
Kind of interface: parallel
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLP102418B-200TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLP102418B-200TQLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; QFP100; parallel
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3ns
Operating voltage: 3.3V
Memory organisation: 1Mx18bit
Memory: 18Mb SRAM
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLP204818B-200TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NVP204818B-200TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 2.5V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 2.5V; 3.1ns; TQFP100; parallel
Kind of interface: parallel
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 2.5V
Memory organisation: 2Mx18bit
Memory: 36Mb SRAM
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61WV25616BLS-25TLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61WV25616BLS-25TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 25ns; TSOP44 II
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 25ns
Operating voltage: 2.4...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62WV51216BLL-55TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 3.3V
Mounting: SMD
Case: TSOP44
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 3.3V
Mounting: SMD
Case: TSOP44
Kind of interface: parallel
Access time: 55ns
auf Bestellung 2943 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.58 EUR |
IS61C25616AL-10TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP44 II
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 10ns; TSOP44 II; parallel
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP44 II
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.32 EUR |
11+ | 6.64 EUR |
IS61QDPB42M36A1-500M3LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S16400J-5TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 1Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.89 EUR |
18+ | 4.05 EUR |
19+ | 3.83 EUR |
25+ | 3.68 EUR |
IS42S16400J-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.56 EUR |
23+ | 3.13 EUR |
24+ | 3.07 EUR |
25+ | 2.95 EUR |
IS42S16400J-6TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Part status: Not recommended for new designs
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 166MHz; 6ns; TSOP54 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Part status: Not recommended for new designs
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.13 EUR |
24+ | 2.99 EUR |
IS42S16400J-7TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.17 EUR |
24+ | 3.06 EUR |
25+ | 2.96 EUR |
26+ | 2.8 EUR |
108+ | 2.69 EUR |
IS42S32200L-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 166MHz; 6ns; TSOP86 II
Clock frequency: 166MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.66 EUR |
14+ | 5.32 EUR |
16+ | 4.72 EUR |
17+ | 4.46 EUR |
25+ | 4.29 EUR |
IS42S32200L-7TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
auf Bestellung 283 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.75 EUR |
16+ | 4.72 EUR |
17+ | 4.46 EUR |
108+ | 4.29 EUR |
IS42S32200L-7TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
Clock frequency: 143MHz
Memory: 64Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 512kx32bitx4
Kind of interface: parallel
Mounting: SMD
Access time: 7ns
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.39 EUR |
IS42S32400F-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 4Mx32bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 166MHz; 6ns; TSOP86 II; tube
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP86 II
Kind of package: tube
Memory organisation: 4Mx32bit
Kind of interface: parallel
Mounting: SMD
Access time: 6ns
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.58 EUR |
8+ | 9.11 EUR |
9+ | 8.61 EUR |
IS62WV5128BLL-55T2LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 55ns
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32 II
Operating voltage: 2.5...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx8bit
Access time: 55ns
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...85°C
Case: TSOP32 II
Operating voltage: 2.5...3.6V
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.61 EUR |
12+ | 6.28 EUR |
25+ | 6.02 EUR |
IS62WV51216ALL-70BLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS62WV51216BLL-55BLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS62WV51216EALL-55BLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62WV51216EBLL-45BLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62WV51216ALL-70BLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62WV51216BLL-55BLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62WV51216EBLL-45BLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS29GL256-70DLEB |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 70ns; LFBGA64
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: LFBGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 70ns
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH