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IS61NLF25636A-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IS61NLF25636B-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61NLF25636B-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS64WV51216EDBLL-10CTLA3 | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IS64LF204818B-7.5TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 3.3V Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IS61LF204818B-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 3.3V Access time: 7.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IS61NLP204818B-250B3L | ISSI |
![]() Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C Operating temperature: 0...70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 2Mx18bit Access time: 2.8ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 36Mb SRAM Mounting: SMD Case: TFBGA165 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IS34ML01G081-BLI | ISSI |
![]() Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Flash Memory: 1Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Case: VFBGA63 Interface: parallel 8bit |
auf Bestellung 397 Stücke: Lieferzeit 14-21 Tag (e) |
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IS34ML01G084-BLI | ISSI |
![]() Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Flash Memory: 1Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Case: VFBGA63 Interface: parallel 8bit |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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IS25LE01G-RILE | ISSI |
![]() Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24 Operating temperature: -40...105°C Operating voltage: 2.3...3.6V Type of integrated circuit: FLASH memory Interface: DTR; QPI; SPI Kind of memory: NOR Flash Kind of package: in-tray; tube Operating frequency: 133MHz Kind of interface: serial Memory: 1Gb FLASH Mounting: SMD Case: LFBGA24 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS25WE01G-RILE | ISSI |
![]() Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.7÷1.95V; serial Operating temperature: -40...105°C Operating voltage: 1.7...1.95V Type of integrated circuit: FLASH memory Interface: DTR; QPI; SPI Kind of memory: NOR Flash Kind of package: in-tray; tube Operating frequency: 104MHz Kind of interface: serial Memory: 1Gb FLASH Mounting: SMD Case: LFBGA24 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS25WP01G-RILA3 | ISSI |
![]() Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: FLASH memory Interface: DTR; QPI; SPI Kind of memory: NOR Flash Kind of package: in-tray; tube Operating frequency: 104MHz Kind of interface: serial Memory: 1Gb FLASH Operating voltage: 1.65...1.95V Case: LFBGA24 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS25WP01G-RILE | ISSI |
![]() Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Interface: DTR; QPI; SPI Kind of memory: NOR Flash Kind of package: in-tray; tube Operating frequency: 104MHz Kind of interface: serial Memory: 1Gb FLASH Operating voltage: 1.65...1.95V Case: LFBGA24 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43DR16128C-25DBL | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84 Supply voltage: 1.7...1.9V DC Kind of interface: parallel Memory: 2Gb DRAM Mounting: SMD Operating temperature: 0...85°C Case: TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx8 Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43DR16128C-25DBLI | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84 Supply voltage: 1.7...1.9V DC Kind of interface: parallel Memory: 2Gb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx8 Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43DR16128C-25DBLI-TR | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84 Supply voltage: 1.7...1.9V DC Kind of interface: parallel Memory: 2Gb DRAM Mounting: SMD Operating temperature: -40...85°C Case: TWBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx8 Access time: 12.5ns Clock frequency: 400MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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IS61LV256AL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 3.3V Access time: 10ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IS62LV256AL-45ULI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 3.3V Access time: 45ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C256AL-12TLI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 12ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 147 Stücke: Lieferzeit 14-21 Tag (e) |
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IS62WV2568BLL-55TLI | ISSI |
![]() Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C6416AL-12TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 5V Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C256AL-12JLI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 12ns Case: SOJ28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Part status: Obsolete |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
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IS25WP128-JBLE | ISSI |
![]() Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Operating voltage: 1.65...1.95V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Interface: DTR; QPI; SPI Operating frequency: 133MHz |
auf Bestellung 565 Stücke: Lieferzeit 14-21 Tag (e) |
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IS62WV1288BLL-55TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 55ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 3.3V Case: TSOP32 Mounting: SMD Kind of interface: parallel Access time: 55ns |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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IS62C1024AL-35TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 35ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IS25WP016D-JNLE | ISSI |
![]() Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8 Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Interface: DTR; QPI; SPI Kind of memory: NOR Flash Operating frequency: 133MHz Kind of interface: serial Memory: 16Mb FLASH Operating voltage: 1.65...1.95V Case: SO8 |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C1024AL-12JLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Part status: Obsolete |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61WV6416DBLL-10TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C1024AL-12TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 154 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C3216AL-12KLI | ISSI |
![]() Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Memory: 512kb SRAM Operating voltage: 5V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx16bit Access time: 12ns Case: SOJ44 |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61WV6416BLL-12TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 3.3V Access time: 12ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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IS62WV6416BLL-55TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 2.5...3.6V Case: TSOP44 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
auf Bestellung 111 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C6416AL-12KLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 5V Access time: 12ns Case: SOJ44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS62LV256AL-45TLI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 3.3V Access time: 45ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS62LV256AL-20TLI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 20ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 3.3V Access time: 20ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS62LV256AL-45TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 3.3V Access time: 45ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS62LV256AL-45ULI-TR | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 3.3V Access time: 45ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS34MW01G164-BLI | ISSI |
![]() Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Flash Memory: 1Gb FLASH Operating voltage: 1.7...1.95V Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Case: VFBGA63 Interface: parallel 8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS61LV6416-10TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 3.3V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16160D-6TLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16160F-6TLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16800E-6TL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R83200F-5TL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 8Mx8bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16160D-6TL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx32bit Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16160F-5TL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16160F-5TL-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16160F-5TLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16160F-5TLI-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16160F-6TL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16320F-5TLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16320F-5TLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16320F-6TL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16320F-6TLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16320F-6TLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16800E-5TL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16800E-5TL-TR | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16800E-5TLI | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R16800E-6TL-TR | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R86400F-5TL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IS43R86400F-5TLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: -40...85°C Kind of memory: DDR1; SDRAM Memory organisation: 16Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: reel; tape Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IS61NLF25636A-7.5TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLF25636B-7.5TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLF25636B-7.5TQLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS64WV51216EDBLL-10CTLA3 |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS64LF204818B-7.5TQLA3 |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LF204818B-7.5TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 7.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 3.3V
Access time: 7.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLP204818B-250B3L |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 2.8ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TFBGA165
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 3.3V; 2.8ns; TFBGA165; 0÷70°C
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 2Mx18bit
Access time: 2.8ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 36Mb SRAM
Mounting: SMD
Case: TFBGA165
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS34ML01G081-BLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Case: VFBGA63
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Case: VFBGA63
Interface: parallel 8bit
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.48 EUR |
14+ | 5.33 EUR |
15+ | 5.03 EUR |
100+ | 4.85 EUR |
IS34ML01G084-BLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Case: VFBGA63
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 1Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Case: VFBGA63
Interface: parallel 8bit
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.39 EUR |
18+ | 4.13 EUR |
19+ | 3.90 EUR |
220+ | 3.86 EUR |
IS25LE01G-RILE |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: in-tray; tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 1Gb FLASH
Mounting: SMD
Case: LFBGA24
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; LFBGA24
Operating temperature: -40...105°C
Operating voltage: 2.3...3.6V
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: in-tray; tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 1Gb FLASH
Mounting: SMD
Case: LFBGA24
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS25WE01G-RILE |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.7÷1.95V; serial
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: in-tray; tube
Operating frequency: 104MHz
Kind of interface: serial
Memory: 1Gb FLASH
Mounting: SMD
Case: LFBGA24
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.7÷1.95V; serial
Operating temperature: -40...105°C
Operating voltage: 1.7...1.95V
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: in-tray; tube
Operating frequency: 104MHz
Kind of interface: serial
Memory: 1Gb FLASH
Mounting: SMD
Case: LFBGA24
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS25WP01G-RILA3 |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: in-tray; tube
Operating frequency: 104MHz
Kind of interface: serial
Memory: 1Gb FLASH
Operating voltage: 1.65...1.95V
Case: LFBGA24
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: in-tray; tube
Operating frequency: 104MHz
Kind of interface: serial
Memory: 1Gb FLASH
Operating voltage: 1.65...1.95V
Case: LFBGA24
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS25WP01G-RILE |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: in-tray; tube
Operating frequency: 104MHz
Kind of interface: serial
Memory: 1Gb FLASH
Operating voltage: 1.65...1.95V
Case: LFBGA24
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; DTR,QPI,SPI; 104MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Kind of package: in-tray; tube
Operating frequency: 104MHz
Kind of interface: serial
Memory: 1Gb FLASH
Operating voltage: 1.65...1.95V
Case: LFBGA24
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR16128C-25DBL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Supply voltage: 1.7...1.9V DC
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Operating temperature: 0...85°C
Case: TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Supply voltage: 1.7...1.9V DC
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Operating temperature: 0...85°C
Case: TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR16128C-25DBLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Supply voltage: 1.7...1.9V DC
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Supply voltage: 1.7...1.9V DC
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR16128C-25DBLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Supply voltage: 1.7...1.9V DC
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel; tape
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 12.5ns; TWBGA84
Supply voltage: 1.7...1.9V DC
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Operating temperature: -40...85°C
Case: TWBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 16Mx8bitx8
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LV256AL-10TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.58 EUR |
IS62LV256AL-45ULI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.52 EUR |
31+ | 2.36 EUR |
40+ | 1.82 EUR |
42+ | 1.72 EUR |
IS61C256AL-12TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.92 EUR |
39+ | 1.84 EUR |
43+ | 1.69 EUR |
IS62WV2568BLL-55TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
IS61C6416AL-12TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.20 EUR |
19+ | 3.85 EUR |
22+ | 3.30 EUR |
23+ | 3.12 EUR |
25+ | 3.09 EUR |
IS61C256AL-12JLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Part status: Obsolete
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 12ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Part status: Obsolete
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.33 EUR |
25+ | 2.92 EUR |
30+ | 2.46 EUR |
31+ | 2.32 EUR |
100+ | 2.25 EUR |
IS25WP128-JBLE |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.79 EUR |
21+ | 3.56 EUR |
22+ | 3.36 EUR |
IS62WV1288BLL-55TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Case: TSOP32
Mounting: SMD
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Case: TSOP32
Mounting: SMD
Kind of interface: parallel
Access time: 55ns
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.42 EUR |
24+ | 2.99 EUR |
32+ | 2.29 EUR |
34+ | 2.16 EUR |
IS62C1024AL-35TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 35ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 35ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.94 EUR |
IS25WP016D-JNLE |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; SO8
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: SO8
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.79 EUR |
45+ | 1.60 EUR |
55+ | 1.32 EUR |
58+ | 1.24 EUR |
IS61C1024AL-12JLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Part status: Obsolete
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Part status: Obsolete
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.59 EUR |
21+ | 3.55 EUR |
IS61WV6416DBLL-10TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.47 EUR |
23+ | 3.23 EUR |
28+ | 2.62 EUR |
29+ | 2.47 EUR |
100+ | 2.40 EUR |
IS61C1024AL-12TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.20 EUR |
19+ | 3.83 EUR |
25+ | 2.96 EUR |
26+ | 2.80 EUR |
100+ | 2.70 EUR |
IS61C3216AL-12KLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 12ns
Case: SOJ44
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 5V; 12ns; SOJ44; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 512kb SRAM
Operating voltage: 5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx16bit
Access time: 12ns
Case: SOJ44
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.76 EUR |
IS61WV6416BLL-12TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 3.3V
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 12ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 3.3V
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.30 EUR |
IS62WV6416BLL-55TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.5...3.6V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.5...3.6V
Case: TSOP44 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.22 EUR |
21+ | 3.49 EUR |
22+ | 3.30 EUR |
IS61C6416AL-12KLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; SOJ44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62LV256AL-45TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62LV256AL-20TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 20ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 20ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 20ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 20ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62LV256AL-45TLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62LV256AL-45ULI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS34MW01G164-BLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Case: VFBGA63
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Case: VFBGA63
Interface: parallel 8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LV6416-10TLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160D-6TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160F-6TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16800E-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R83200F-5TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 8Mx8bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 8Mx8bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160D-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx32bit; 166MHz; 6ns; TSOP66 II; tube
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx32bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160F-5TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160F-5TL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160F-5TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160F-5TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160F-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16320F-5TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16320F-5TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16320F-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16320F-6TLI |
![]() |
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16320F-6TLI-TR |
![]() |
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16800E-5TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16800E-5TL-TR |
![]() |
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16800E-5TLI |
![]() |
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16800E-6TL-TR |
![]() |
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 2.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R86400F-5TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R86400F-5TLI-TR |
![]() |
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH