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IS34ML02G084-TLI | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Case: TSOP48 Kind of interface: parallel Interface: parallel 8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
IS43LR16160G-6BL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16160G-6BL-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16160G-6BLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16160G-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16320C-6BL-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16320C-6BLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16320C-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16400C-6BLI | ISSI |
![]() Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60 Kind of package: in-tray; tube Kind of memory: LPDDR; SDRAM Kind of interface: parallel Mounting: SMD Case: TFBGA60 Memory organisation: 1Mx16bitx4 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 1.7...1.95V DC Memory: 64Mb DRAM Clock frequency: 166MHz Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16640A-5BL | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 1Gb DRAM Memory organisation: 16Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16640A-5BL-TR | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 1Gb DRAM Memory organisation: 16Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TWBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16800G-6BL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16800G-6BL-TR | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16800G-6BLI | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR16800G-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR32160C-6BLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR32160C-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR32320B-6BL | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 1Gb DRAM Memory organisation: 8Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: LFBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR32640A-6BL | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 2Gb DRAM Memory organisation: 16Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: WBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR32640A-6BLI | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 2Gb DRAM Memory organisation: 16Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: WBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR32800G-6BL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR32800G-6BLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LR32800G-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 2Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS42S16100H-6BL-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS42S16100H-6TL-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS42S16100H-7TL-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS42S16100H-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS42S16100H-7BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS64LPS25636A-166TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61LPS25636A-200B3LI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: BGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61LPS25636A-200B3LI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: BGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61LPS25636A-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61LPS25636A-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 256kx36bit Operating voltage: 3.3V Access time: 3.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61LPS25636B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 256kx36bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61LPS25636B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Memory organisation: 256kx36bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LD16128B-25BL | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: 0...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 2Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 16Mx8bitx8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LD16128B-25BL-TR | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: reel; tape Kind of interface: parallel Operating temperature: 0...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 2Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 16Mx8bitx8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LD16320A-25BLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 512Mb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 8Mx16bitx4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LD16640C-18BLI | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 1Gb DRAM Mounting: SMD Clock frequency: 533MHz Memory organisation: 8Mx16bitx8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LD16640C-25BLI | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 1Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 8Mx16bitx8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43LD16640C-25BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Kind of memory: LPDDR2; SDRAM Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...85°C Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Memory: 1Gb DRAM Mounting: SMD Clock frequency: 400MHz Memory organisation: 8Mx16bitx8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43TR16K01S2AL-125KBLI | ISSI |
![]() Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 16Gb DRAM Memory organisation: 1Gx16bit Clock frequency: 800MHz Access time: 13.75ns Case: LWBGA96 Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS43TR16K01S2AL-125KBL | ISSI |
![]() Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96 Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 16Gb DRAM Memory organisation: 1Gx16bit Clock frequency: 800MHz Access time: 13.75ns Case: LWBGA96 Mounting: SMD Operating temperature: 0...95°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.35V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61QDB21M18A-250B4LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61QDB24M18A-250B4LI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 4Mx18bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
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IS62C1024AL-35TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel Operating temperature: -40...85°C Mounting: SMD Kind of interface: parallel Case: TSOP32 Kind of memory: SRAM Type of integrated circuit: SRAM memory Access time: 35ns Operating voltage: 5V Memory: 1Mb SRAM Memory organisation: 128kx8bit |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IS66WVH8M8BLL-100B1LI | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Operating voltage: 3V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 40ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS66WVH8M8BLL-100B1LI-TR | ISSI |
![]() Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 64Mb SRAM Memory organisation: 8Mx8bit Operating voltage: 3V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Access time: 40ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS66WVH16M8DBLL-100B1LI | ISSI |
![]() Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 128Mb SRAM Memory organisation: 16Mx8bit Operating voltage: 2.7...3.6V Case: TFBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61LPS51218A-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3.1ns Operating voltage: 3.3V Memory: 9Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx18bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61LPS51236B-200B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61LPS51236B-200B3LI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: reel; tape Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61LPS51236B-200TQLI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61LPS51236B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 3.3V Memory: 18Mb SRAM Kind of package: reel; tape Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61VPS51236B-200B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 2.5V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61VPS51236B-200TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel Operating temperature: -40...85°C Case: QFP100 Mounting: SMD Kind of memory: SRAM Access time: 3ns Operating voltage: 2.5V Memory: 18Mb SRAM Kind of package: reel; tape Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61VPS51236B-250B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165 Operating temperature: -40...85°C Case: TFBGA165 Mounting: SMD Kind of memory: SRAM Access time: 2.6ns Operating voltage: 2.5V Memory: 18Mb SRAM Kind of package: in-tray; tube Memory organisation: 512kx36bit Type of integrated circuit: SRAM memory Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
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IS61C1024AL-12TLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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IS61C1024AL-12HLI | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
IS61C1024AL-12JLI-TR | ISSI |
![]() Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Access time: 12ns Case: SOJ32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IS34ML02G084-TLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16160G-6BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16160G-6BL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16160G-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16160G-6BLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16320C-6BL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16320C-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16320C-6BLI-TR |
![]() |
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16400C-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of memory: LPDDR; SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Kind of package: in-tray; tube
Kind of memory: LPDDR; SDRAM
Kind of interface: parallel
Mounting: SMD
Case: TFBGA60
Memory organisation: 1Mx16bitx4
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Memory: 64Mb DRAM
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16640A-5BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16640A-5BL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Access time: 5ns
Case: TWBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16800G-6BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16800G-6BL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16800G-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16800G-6BLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR32160C-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR32160C-6BLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS43LR32320B-6BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 8Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: LFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx32bitx4; 166MHz; 6ns; LFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 1Gb DRAM
Memory organisation: 8Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: LFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS43LR32640A-6BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR32640A-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx32bitx4; 166MHz; 6ns; WBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 2Gb DRAM
Memory organisation: 16Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: WBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS43LR32800G-6BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR32800G-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR32800G-6BLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 2Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16100H-6BL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16100H-6TL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16100H-7TL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16100H-6BLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16100H-7BLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS64LPS25636A-166TQLA3 |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LPS25636A-200B3LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LPS25636A-200B3LI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; BGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: BGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LPS25636A-200TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LPS25636A-200TQLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Operating voltage: 3.3V
Access time: 3.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LPS25636B-200TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LPS25636B-200TQLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS43LD16128B-25BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LD16128B-25BL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 16Mx8bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: 0...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 2Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LD16320A-25BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 512Mb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 512Mb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LD16640C-18BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 533MHz
Memory organisation: 8Mx16bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 533MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 533MHz
Memory organisation: 8Mx16bitx8
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IS43LD16640C-25BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
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IS43LD16640C-25BLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Kind of memory: LPDDR2; SDRAM
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Memory: 1Gb DRAM
Mounting: SMD
Clock frequency: 400MHz
Memory organisation: 8Mx16bitx8
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IS43TR16K01S2AL-125KBLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
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IS43TR16K01S2AL-125KBL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; 1Gx16bit; 800MHz; 13.75ns; LWBGA96
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 16Gb DRAM
Memory organisation: 1Gx16bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: LWBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.35V DC
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IS61QDB21M18A-250B4LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61QDB24M18A-250B4LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS62C1024AL-35TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: parallel
Case: TSOP32
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 35ns
Operating voltage: 5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Operating temperature: -40...85°C
Mounting: SMD
Kind of interface: parallel
Case: TSOP32
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 35ns
Operating voltage: 5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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19+ | 3.76 EUR |
IS66WVH8M8BLL-100B1LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 40ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 40ns
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IS66WVH8M8BLL-100B1LI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 40ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 8Mx8bit; 3V; 40ns; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64Mb SRAM
Memory organisation: 8Mx8bit
Operating voltage: 3V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Access time: 40ns
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IS66WVH16M8DBLL-100B1LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 2.7...3.6V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 128MbSRAM; 16Mx8bit; 2.7÷3.6V; TFBGA24; parallel
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 128Mb SRAM
Memory organisation: 16Mx8bit
Operating voltage: 2.7...3.6V
Case: TFBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
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IS61LPS51218A-200TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 9Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx18bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61LPS51236B-200B3LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61LPS51236B-200B3LI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61LPS51236B-200TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61LPS51236B-200TQLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 3.3V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Produkt ist nicht verfügbar
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IS61VPS51236B-200B3LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61VPS51236B-200TQLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 3ns; QFP100; parallel
Operating temperature: -40...85°C
Case: QFP100
Mounting: SMD
Kind of memory: SRAM
Access time: 3ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: reel; tape
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
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IS61VPS51236B-250B3LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 2.6ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165
Operating temperature: -40...85°C
Case: TFBGA165
Mounting: SMD
Kind of memory: SRAM
Access time: 2.6ns
Operating voltage: 2.5V
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Memory organisation: 512kx36bit
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Produkt ist nicht verfügbar
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IS61C1024AL-12TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.8 EUR |
27+ | 2.72 EUR |
IS61C1024AL-12HLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IS61C1024AL-12JLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 12ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Access time: 12ns
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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