Foto | Bezeichnung | Hersteller | Beschreibung |
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IS61WV51216EDBLL-10BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS43LR16160G-6BL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS43LR16160G-6BL-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS43LR16160G-6BLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS43LR16160G-6BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS43DR82560C-25DBL | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C Case: TWBGA60 Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx8bitx8 Access time: 5ns Clock frequency: 400MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Operating temperature: 0...85°C Supply voltage: 1.7...1.9V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS43DR82560C-25DBLI | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60 Case: TWBGA60 Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx8bitx8 Access time: 5ns Clock frequency: 400MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Operating temperature: -40...85°C Supply voltage: 1.7...1.9V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS43DR82560C-3DBL | ISSI |
![]() Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C Case: TWBGA60 Mounting: SMD Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx8bitx8 Access time: 5ns Clock frequency: 333MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 2Gb DRAM Operating temperature: 0...85°C Supply voltage: 1.7...1.9V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS34ML02G081-TLI | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Flash Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Interface: parallel 8bit Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS34ML02G081-TLI-TR | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Flash Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Interface: parallel 8bit Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS34ML04G081-TLI | ISSI |
![]() Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Flash Memory: 4Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Case: TSOP48 Interface: parallel 8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IS42S16100H-7TLI | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Clock frequency: 143MHz Memory: 16Mb DRAM Supply voltage: 3.3V DC Operating temperature: -40...85°C Mounting: SMD Kind of package: tube Access time: 7ns Memory organisation: 512kx16bitx2 Kind of interface: parallel Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP50 II |
auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S16800F-7TLI | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Access time: 7ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3.3V DC Clock frequency: 143MHz Kind of package: tube |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S16800F-6TLI | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Clock frequency: 166MHz Memory: 128Mb DRAM Supply voltage: 3...3.6V DC Operating temperature: -40...85°C Mounting: SMD Kind of package: in-tray; tube Access time: 6ns Memory organisation: 2Mx16bitx4 Kind of interface: parallel Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S16800F-7TL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Clock frequency: 143MHz Memory: 128Mb DRAM Supply voltage: 3.3V DC Operating temperature: 0...70°C Mounting: SMD Kind of package: tube Access time: 7ns Memory organisation: 2Mx16bitx4 Kind of interface: parallel Kind of memory: SDRAM Type of integrated circuit: DRAM memory Case: TSOP54 II |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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IS34ML02G084-TLI-TR | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Case: TSOP48 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of memory: NAND Flash Kind of interface: parallel Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Interface: parallel 8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS34MW02G084-TLI-TR | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Case: TSOP48 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of memory: NAND Flash Kind of interface: parallel Memory: 2Gb FLASH Operating voltage: 1.7...1.95V Interface: parallel 8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IS34ML02G084-TLI | ISSI |
![]() Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Case: TSOP48 Mounting: SMD Operating temperature: -40...85°C Kind of memory: NAND Flash Kind of interface: parallel Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Interface: parallel 8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IS25WP016D-JKLE | ISSI |
![]() Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Operating temperature: -40...105°C Mounting: SMD Type of integrated circuit: FLASH memory Interface: DTR; QPI; SPI Kind of memory: NOR Flash Operating frequency: 133MHz Dimensions: 6x5mm Kind of interface: serial Memory: 16Mb FLASH Operating voltage: 1.65...1.95V Case: WSON8 |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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IS25WP080D-JULE-TR | ISSI |
![]() Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS61NLP102418B-250B3L | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Operating voltage: 3.3V Access time: 2.6ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS61NLP102418B-250B3LI | ISSI |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 1Mx18bit Operating voltage: 3.3V Access time: 2.6ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS64LF12832A-7.5TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS64LF12832A-7.5TQLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS64LPS12832A-200TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 3.1ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS64LPS12832A-200TQLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 3.1ns Kind of package: reel; tape Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS62WV5128BLL-55BLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Case: TFBGA36 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Access time: 55ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS62WV5128BLL-55QLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Case: SOP32 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Access time: 55ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS62WV5128BLL-55BLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS62WV5128BLL-55QLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS62WV5128BLL-55HLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS62WV5128BLL-55T2LI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP32 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS62WV5128BLL-55TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IS62C256AL-45TLI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 45ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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IS62C256AL-25ULI | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 25ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS62C25616BL-45TLI | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS62C256AL-25ULI-TR | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 25ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS62C256AL-45TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 45ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IS62C256AL-45ULI-TR | ISSI |
![]() Description: IC: SRAM memory; 256kbSRAM; 32x8bit; 5V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32x8bit Operating voltage: 5V Access time: 45ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IS62C25616BL-45TLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 5V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS64LF12832EC-7.5TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4Mb SRAM Operating temperature: -40...125°C Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS64LF12836A-7.5B3LA3-TR | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...125°C Case: TFBGA165 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS61LF12836A-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS61LF12836A-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS61LF12836EC-6.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 6.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS64LF12836EC-7.5B3LA3 | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...125°C Case: TFBGA165 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS61LF12836EC-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IS61NLF12836A-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: TQFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IS61NLF12836A-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100 Mounting: SMD Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Operating temperature: -40...85°C Case: TQFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IS66WVS1M8BLL-104NLI | ISSI |
![]() Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Operating voltage: 3V Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IS61LF25618A-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100 Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Mounting: SMD Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS61LF25618A-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100 Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 4.5Mb SRAM Mounting: SMD Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS64LF25636A-7.5B3LA3 | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165 Operating temperature: -40...125°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: PBGA165 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IS64LF25636A-7.5TQLA3 | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...125°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IS64LF25636A-7.5TQLA3-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...125°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IS61LF25636A-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IS61LF25636A-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: TQFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IS61LF25636B-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
IS61LF25636B-7.5TQLI-TR | ISSI |
![]() Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx36bit Access time: 7.5ns Kind of package: reel; tape Kind of interface: parallel Memory: 9Mb SRAM Mounting: SMD Case: QFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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IS61NLF25618A-7.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; TQFP100 Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 256kx18bit Access time: 7.5ns Kind of package: in-tray; tube Kind of interface: parallel Memory: 4.5Mb SRAM Mounting: SMD Case: TQFP100 Operating voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IS61WV51216EDBLL-10BLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16160G-6BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16160G-6BL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16160G-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43LR16160G-6BLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR82560C-25DBL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60; 0÷85°C
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Supply voltage: 1.7...1.9V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR82560C-25DBLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 400MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: -40...85°C
Supply voltage: 1.7...1.9V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR82560C-3DBL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Supply voltage: 1.7...1.9V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 333MHz; 5ns; TWBGA60; 0÷85°C
Case: TWBGA60
Mounting: SMD
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx8bitx8
Access time: 5ns
Clock frequency: 333MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 2Gb DRAM
Operating temperature: 0...85°C
Supply voltage: 1.7...1.9V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS34ML02G081-TLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of package: in-tray; tube
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS34ML02G081-TLI-TR |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS34ML04G081-TLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Case: TSOP48
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Case: TSOP48
Interface: parallel 8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16100H-7TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Clock frequency: 143MHz
Memory: 16Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: tube
Access time: 7ns
Memory organisation: 512kx16bitx2
Kind of interface: parallel
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP50 II
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Clock frequency: 143MHz
Memory: 16Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: tube
Access time: 7ns
Memory organisation: 512kx16bitx2
Kind of interface: parallel
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP50 II
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.56 EUR |
IS42S16800F-7TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Clock frequency: 143MHz
Kind of package: tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Access time: 7ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Clock frequency: 143MHz
Kind of package: tube
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.37 EUR |
11+ | 6.74 EUR |
IS42S16800F-6TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: in-tray; tube
Access time: 6ns
Memory organisation: 2Mx16bitx4
Kind of interface: parallel
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Clock frequency: 166MHz
Memory: 128Mb DRAM
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Mounting: SMD
Kind of package: in-tray; tube
Access time: 6ns
Memory organisation: 2Mx16bitx4
Kind of interface: parallel
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.55 EUR |
15+ | 4.92 EUR |
16+ | 4.65 EUR |
IS42S16800F-7TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Clock frequency: 143MHz
Memory: 128Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Mounting: SMD
Kind of package: tube
Access time: 7ns
Memory organisation: 2Mx16bitx4
Kind of interface: parallel
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Clock frequency: 143MHz
Memory: 128Mb DRAM
Supply voltage: 3.3V DC
Operating temperature: 0...70°C
Mounting: SMD
Kind of package: tube
Access time: 7ns
Memory organisation: 2Mx16bitx4
Kind of interface: parallel
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Case: TSOP54 II
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.00 EUR |
17+ | 4.32 EUR |
18+ | 4.09 EUR |
25+ | 3.93 EUR |
IS34ML02G084-TLI-TR |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Interface: parallel 8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS34MW02G084-TLI-TR |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 1.7...1.95V
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 1.7...1.95V
Interface: parallel 8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS34ML02G084-TLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Case: TSOP48
Mounting: SMD
Operating temperature: -40...85°C
Kind of memory: NAND Flash
Kind of interface: parallel
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Interface: parallel 8bit
Produkt ist nicht verfügbar
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IS25WP016D-JKLE |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Dimensions: 6x5mm
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Operating temperature: -40...105°C
Mounting: SMD
Type of integrated circuit: FLASH memory
Interface: DTR; QPI; SPI
Kind of memory: NOR Flash
Operating frequency: 133MHz
Dimensions: 6x5mm
Kind of interface: serial
Memory: 16Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
59+ | 1.22 EUR |
65+ | 1.12 EUR |
67+ | 1.07 EUR |
68+ | 1.06 EUR |
100+ | 1.02 EUR |
IS25WP080D-JULE-TR |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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Im Einkaufswagen
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IS61NLP102418B-250B3L |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 3.3V
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 3.3V
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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Im Einkaufswagen
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IS61NLP102418B-250B3LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 3.3V
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 2.6ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Operating voltage: 3.3V
Access time: 2.6ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS64LF12832A-7.5TQLA3 |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS64LF12832A-7.5TQLA3-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS64LPS12832A-200TQLA3 |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS64LPS12832A-200TQLA3-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Case: QFP100
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 3.1ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4Mb SRAM
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS62WV5128BLL-55BLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Case: TFBGA36
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray; tube
Access time: 55ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS62WV5128BLL-55QLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Case: SOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Case: SOP32
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Access time: 55ns
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS62WV5128BLL-55BLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS62WV5128BLL-55QLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS62WV5128BLL-55HLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS62WV5128BLL-55T2LI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS62WV5128BLL-55TLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IS62C256AL-45TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.74 EUR |
44+ | 1.66 EUR |
IS62C256AL-25ULI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS62C25616BL-45TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62C256AL-25ULI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 25ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62C256AL-45TLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 45ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS62C256AL-45ULI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32x8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32x8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32x8bit; 5V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32x8bit
Operating voltage: 5V
Access time: 45ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS62C25616BL-45TLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 5V; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 5V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS64LF12832EC-7.5TQLA3 |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx32bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4Mb SRAM
Operating temperature: -40...125°C
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS64LF12836A-7.5B3LA3-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...125°C
Case: TFBGA165
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...125°C
Case: TFBGA165
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS61LF12836A-7.5TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LF12836A-7.5TQLI-TR |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LF12836EC-6.5TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 6.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 6.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS64LF12836EC-7.5B3LA3 |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...125°C
Case: TFBGA165
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...125°C
Case: TFBGA165
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LF12836EC-7.5TQLI-TR |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLF12836A-7.5TQLI |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLF12836A-7.5TQLI-TR |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Operating temperature: -40...85°C
Case: TQFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS66WVS1M8BLL-104NLI |
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Hersteller: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 3V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 3V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LF25618A-7.5TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LF25618A-7.5TQLI-TR |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; QFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS64LF25636A-7.5B3LA3 |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: PBGA165
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; PBGA165
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: PBGA165
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS64LF25636A-7.5TQLA3 |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS64LF25636A-7.5TQLA3-TR |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LF25636A-7.5TQLI |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LF25636A-7.5TQLI-TR |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LF25636B-7.5TQLI |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61LF25636B-7.5TQLI-TR |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; 3.3V; 7.5ns; QFP100; parallel
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx36bit
Access time: 7.5ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 9Mb SRAM
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61NLF25618A-7.5TQLI |
![]() |
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 7.5ns; TQFP100
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx18bit
Access time: 7.5ns
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 4.5Mb SRAM
Mounting: SMD
Case: TQFP100
Operating voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH