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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IS43LQ32256A-062BLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A48D95A9A040D5&compId=IS43LQ32256A-062BLI.pdf?ci_sign=1dff83ec8cbf940930d1044354bf37ce9c4308bb Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C
Memory: 8Gb DRAM
Kind of memory: DRAM; LPDDR4; SDRAM
Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC
Operating temperature: -40...95°C
Kind of interface: parallel
Mounting: SMD
Case: TFBGA200
Type of integrated circuit: DRAM memory
Memory organisation: 256Mx16bitx2
Clock frequency: 1.6GHz
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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IS61LF51236B-6.5TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C939E64D60D5&compId=IS61LF102418B-7.5TQLI.pdf?ci_sign=6c6bd47dc7db7a70b57ada7f551c66045420f876 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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IS61NLF102436B-6.5TQLI IS61NLF102436B-6.5TQLI ISSI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58B5A0C8120D5&compId=IS61NLF102436B-6.5TQLI.pdf?ci_sign=8172463ede38d791670b60d349ec526bf5e57805 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 6.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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IS43LQ32256A-062BLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A48D95A9A040D5&compId=IS43LQ32256A-062BLI.pdf?ci_sign=1dff83ec8cbf940930d1044354bf37ce9c4308bb
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C
Memory: 8Gb DRAM
Kind of memory: DRAM; LPDDR4; SDRAM
Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC
Operating temperature: -40...95°C
Kind of interface: parallel
Mounting: SMD
Case: TFBGA200
Type of integrated circuit: DRAM memory
Memory organisation: 256Mx16bitx2
Clock frequency: 1.6GHz
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IS61LF51236B-6.5TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A4C939E64D60D5&compId=IS61LF102418B-7.5TQLI.pdf?ci_sign=6c6bd47dc7db7a70b57ada7f551c66045420f876
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IS61NLF102436B-6.5TQLI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE97A58B5A0C8120D5&compId=IS61NLF102436B-6.5TQLI.pdf?ci_sign=8172463ede38d791670b60d349ec526bf5e57805
IS61NLF102436B-6.5TQLI
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 6.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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