| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IS43LQ32256A-062BLI | ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C Memory: 8Gb DRAM Kind of memory: DRAM; LPDDR4; SDRAM Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC Operating temperature: -40...95°C Kind of interface: parallel Mounting: SMD Case: TFBGA200 Type of integrated circuit: DRAM memory Memory organisation: 256Mx16bitx2 Clock frequency: 1.6GHz Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IS61LF51236B-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 18Mb SRAM Memory organisation: 512kx36bit Operating voltage: 3.3V Access time: 6.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IS61NLF102436B-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 6.5ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 1Mx36bit Operating voltage: 3.3V Access time: 6.5ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IS43LQ32256A-062BLI |
|
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C
Memory: 8Gb DRAM
Kind of memory: DRAM; LPDDR4; SDRAM
Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC
Operating temperature: -40...95°C
Kind of interface: parallel
Mounting: SMD
Case: TFBGA200
Type of integrated circuit: DRAM memory
Memory organisation: 256Mx16bitx2
Clock frequency: 1.6GHz
Kind of package: in-tray; tube
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C
Memory: 8Gb DRAM
Kind of memory: DRAM; LPDDR4; SDRAM
Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC
Operating temperature: -40...95°C
Kind of interface: parallel
Mounting: SMD
Case: TFBGA200
Type of integrated circuit: DRAM memory
Memory organisation: 256Mx16bitx2
Clock frequency: 1.6GHz
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS61LF51236B-6.5TQLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 18Mb SRAM
Memory organisation: 512kx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS61NLF102436B-6.5TQLI |
|
Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 6.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; 3.3V; 6.5ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH