Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
IS43R16160F-5TL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Memory: 256Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16160F-6TL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Operating temperature: 0...70°C Memory: 256Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16320F-5BL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Operating temperature: 0...70°C Memory: 512Mb DRAM Mounting: SMD Case: TWBGA60 Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16320F-6BL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Operating temperature: 0...70°C Memory: 512Mb DRAM Mounting: SMD Case: TWBGA60 Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16320F-6TL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Operating temperature: 0...70°C Memory: 512Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16800E-5TL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Memory: 128Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16800E-6TL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II Operating temperature: 0...70°C Memory: 128Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R32160D-5BL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 200MHz; 5ns; LFBGA144 Operating temperature: 0...70°C Memory: 512Mb DRAM Mounting: SMD Case: LFBGA144 Supply voltage: 2.6V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx32bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R32400E-5BL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144 Operating temperature: 0...70°C Memory: 128Mb DRAM Mounting: SMD Case: LFBGA144 Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 1Mx32bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R83200F-5TL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Memory: 256Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx8bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R86400F-5TL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16160F-6TLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II Operating temperature: -40...85°C Memory: 256Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16160F-5BLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Operating temperature: -40...85°C Memory: 256Mb DRAM Mounting: SMD Case: TFBGA60 Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16160F-5TLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: -40...85°C Memory: 256Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16160F-6BLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Operating temperature: -40...85°C Memory: 256Mb DRAM Mounting: SMD Case: TFBGA60 Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16320F-5BLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60 Operating temperature: -40...85°C Memory: 512Mb DRAM Mounting: SMD Case: TWBGA60 Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16320F-5TLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: -40...85°C Memory: 512Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16320F-6BLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60 Operating temperature: -40...85°C Memory: 512Mb DRAM Mounting: SMD Case: TWBGA60 Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16320F-6TLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II Operating temperature: -40...85°C Memory: 512Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 8Mx16bitx4 Access time: 6ns Clock frequency: 166MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16800E-5TLI | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: -40...85°C Memory: 128Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 2Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R32400E-5BLI | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144 Operating temperature: -40...85°C Memory: 128Mb DRAM Mounting: SMD Case: LFBGA144 Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 1Mx32bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: in-tray; tube Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16160F-5BL-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Operating temperature: 0...70°C Memory: 256Mb DRAM Mounting: SMD Case: TFBGA60 Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: reel; tape Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R16160F-5TL-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Memory: 256Mb DRAM Mounting: SMD Case: TSOP66 II Supply voltage: 2.5V DC Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 4Mx16bitx4 Access time: 5ns Clock frequency: 200MHz Kind of package: reel; tape Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS42S86400F-6TL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS42S86400F-6TLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS42S86400F-6TLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS42S86400F-7TL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS42S86400F-7TLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS42S86400F-7TLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R86400F-5BLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43R86400F-5TLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43DR86400E-25DBL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: 0...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43DR86400E-25DBLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43DR86400E-3DBL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: 0...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43DR86400E-3DBLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43DR86400E-3DBLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43DR86400E-25DBLI-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IS61VVF409618B-7.5TQL | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; 7.5ns; TQFP100; parallel Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TQFP100 Kind of package: in-tray; tube Mounting: SMD Kind of interface: parallel Operating temperature: 0...70°C Access time: 7.5ns Operating voltage: 1.8V Memory: 72Mb SRAM Memory organisation: 4Mx18bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IS43LR16200D-6BLI | ISSI |
![]() Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60 Mounting: SMD Case: TFBGA60 Kind of package: in-tray; tube Kind of interface: parallel Operating temperature: -40...85°C Access time: 6ns Supply voltage: 1.7...1.95V DC Memory: 32Mb DRAM Memory organisation: 1Mx16bitx2 Clock frequency: 166MHz Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS61QDPB42M36A2-500M3LI | ISSI |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Operating temperature: -40...85°C Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating voltage: 1.8V Memory: 72Mb SRAM Memory organisation: 2Mx36bit Kind of package: in-tray; tube Case: LFBGA165 Mounting: SMD Kind of interface: parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS42S32800J-7TLI-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 8Mx32bit Clock frequency: 143MHz Access time: 7ns Case: TSOP86 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS34ML04G081-TLI | ISSI |
![]() Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Flash Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 4Gb FLASH Interface: parallel 8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS61LF12836EC-6.5TQLI | ISSI |
![]() Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Operating voltage: 3.3V Access time: 6.5ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS43LQ32256A-062BLI | ISSI |
![]() Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TFBGA200 Operating temperature: -40...95°C Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC Clock frequency: 1.6GHz Memory organisation: 256Mx16bitx2 Memory: 8Gb DRAM Kind of memory: DRAM; LPDDR4; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IS42S16160G-6TLI | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IS42S16160J-6TL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IS42S16160G-7TL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IS42S16800F-6TL | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IS42S16100H-7TLI-TR | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IS42S16160G-7TL-TR | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IS42S16320D-7TL | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IS42S16320D-7TL-TR | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IS42S16320F-7TLI | ISSI |
![]() Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 32Mx16bit Clock frequency: 143MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IS42S16800F-6TL-TR | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IS42S16800F-7TL-TR | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IS42S16800F-7TLI-TR | ISSI |
![]() Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 2Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: tube Supply voltage: 3.3V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IS42S16100H-7TL | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 143MHz Access time: 7ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS42S16160J-7TL | ISSI |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS42S16100H-6BL | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
IS42S16100H-6TL | ISSI |
![]() Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 16Mb DRAM Memory organisation: 512kx16bitx2 Clock frequency: 166MHz Access time: 6ns Case: TSOP50 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IS43R16160F-5TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160F-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16320F-5BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: 0...70°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: 0...70°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16320F-6BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Operating temperature: 0...70°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Operating temperature: 0...70°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16320F-6TL |
![]() |
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16800E-5TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16800E-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R32160D-5BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 200MHz; 5ns; LFBGA144
Operating temperature: 0...70°C
Memory: 512Mb DRAM
Mounting: SMD
Case: LFBGA144
Supply voltage: 2.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx32bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 200MHz; 5ns; LFBGA144
Operating temperature: 0...70°C
Memory: 512Mb DRAM
Mounting: SMD
Case: LFBGA144
Supply voltage: 2.6V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx32bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R32400E-5BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: LFBGA144
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Operating temperature: 0...70°C
Memory: 128Mb DRAM
Mounting: SMD
Case: LFBGA144
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R83200F-5TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx8bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R86400F-5TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160F-6TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP66 II
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160F-5BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160F-5TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16160F-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16320F-5BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16320F-5TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R16320F-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Operating temperature: -40...85°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TWBGA60
Operating temperature: -40...85°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TWBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
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Im Einkaufswagen
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IS43R16320F-6TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Operating temperature: -40...85°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TSOP66 II
Operating temperature: -40...85°C
Memory: 512Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 8Mx16bitx4
Access time: 6ns
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS43R16800E-5TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Memory: 128Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 2Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS43R32400E-5BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Operating temperature: -40...85°C
Memory: 128Mb DRAM
Mounting: SMD
Case: LFBGA144
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
Operating temperature: -40...85°C
Memory: 128Mb DRAM
Mounting: SMD
Case: LFBGA144
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS43R16160F-5BL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Operating temperature: 0...70°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60
Operating temperature: 0...70°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TFBGA60
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS43R16160F-5TL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Kind of interface: parallel
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Memory: 256Mb DRAM
Mounting: SMD
Case: TSOP66 II
Supply voltage: 2.5V DC
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 200MHz
Kind of package: reel; tape
Kind of interface: parallel
Produkt ist nicht verfügbar
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IS42S86400F-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S86400F-6TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S86400F-6TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S86400F-7TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S86400F-7TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S86400F-7TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R86400F-5BLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43R86400F-5TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR86400E-25DBL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR86400E-25DBLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR86400E-3DBL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR86400E-3DBLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR86400E-3DBLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS43DR86400E-25DBLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS61VVF409618B-7.5TQL |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; 7.5ns; TQFP100; parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Kind of package: in-tray; tube
Mounting: SMD
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 7.5ns
Operating voltage: 1.8V
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; 1.8V; 7.5ns; TQFP100; parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Kind of package: in-tray; tube
Mounting: SMD
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 7.5ns
Operating voltage: 1.8V
Memory: 72Mb SRAM
Memory organisation: 4Mx18bit
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS43LR16200D-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32MbDRAM; 1Mx16bitx2; 166MHz; 6ns; TFBGA60
Mounting: SMD
Case: TFBGA60
Kind of package: in-tray; tube
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Memory: 32Mb DRAM
Memory organisation: 1Mx16bitx2
Clock frequency: 166MHz
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS61QDPB42M36A2-500M3LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Operating temperature: -40...85°C
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating voltage: 1.8V
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Kind of package: in-tray; tube
Case: LFBGA165
Mounting: SMD
Kind of interface: parallel
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Operating temperature: -40...85°C
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating voltage: 1.8V
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Kind of package: in-tray; tube
Case: LFBGA165
Mounting: SMD
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S32800J-7TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 8Mx32bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 8Mx32bit; 143MHz; 7ns; TSOP86 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 8Mx32bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP86 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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IS34ML04G081-TLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 4Gb FLASH
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND Flash
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 4Gb FLASH
Interface: parallel 8bit
Produkt ist nicht verfügbar
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IS61LF12836EC-6.5TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Operating voltage: 3.3V
Access time: 6.5ns
Case: QFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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IS43LQ32256A-062BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA200
Operating temperature: -40...95°C
Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC
Clock frequency: 1.6GHz
Memory organisation: 256Mx16bitx2
Memory: 8Gb DRAM
Kind of memory: DRAM; LPDDR4; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 256Mx16bitx2; 1.6GHz; TFBGA200; -40÷95°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TFBGA200
Operating temperature: -40...95°C
Supply voltage: 1.06...1.17V DC; 1.7...1.95V DC
Clock frequency: 1.6GHz
Memory organisation: 256Mx16bitx2
Memory: 8Gb DRAM
Kind of memory: DRAM; LPDDR4; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
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IS42S16160G-6TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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IS42S16160J-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S16160G-7TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S16800F-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S16100H-7TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16160G-7TL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16320D-7TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16320D-7TL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 8Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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IS42S16320F-7TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 143MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16800F-6TL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16800F-7TL-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16800F-7TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 2Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: tube
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16100H-7TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16160J-7TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16100H-6BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA60
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IS42S16100H-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TSOP50 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 16Mb DRAM
Memory organisation: 512kx16bitx2
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP50 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray; tube
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH