Produkte > MGT BRIGHTEK > Alle Produkte des Herstellers MGT BRIGHTEK (6) > Seite 1 nach 1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| GPT65C0YME | MGT BRIGHTEK |
 Category: SMD N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET / N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 31A Power dissipation: 38W Case: DFN8080 Gate-source voltage: ±20V On-state resistance: 245mΩ Mounting: SMD Gate charge: 22nC Kind of package: tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| GPT65Z4YMR | MGT BRIGHTEK |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET / N-MOSFET Technology: GaN Polarisation: unipolar Kind of transistor: cascode; HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 80A Case: DFN8080 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 38nC Kind of package: tape Power dissipation: 67.5W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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UT8005B | MGT BRIGHTEK |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape Capacitance: 15pF Mounting: SMD Case - inch: 0201 Case - mm: 0603 Kind of package: reel; tape Type of diode: TVS Leakage current: 1µA Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 12.5A Application: automotive industry Semiconductor structure: bidirectional Version: ESD |
auf Bestellung 11756 Stücke: Lieferzeit 14-21 Tag (e) |
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UT817ZB | MGT BRIGHTEK |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: bidirectional Case - inch: 0201 Case - mm: 0603 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.18pF |
auf Bestellung 11125 Stücke: Lieferzeit 14-21 Tag (e) |
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UT8413A | MGT BRIGHTEK |
Category: Protection diodes - arrays Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 5...8.5V Max. forward impulse current: 5A Version: ESD Mounting: SMD Case: DFN2510-10 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 4 Capacitance: 0.45pF Application: automotive industry Kind of package: reel; tape |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
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UT848ZA | MGT BRIGHTEK |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6.5...16V Max. forward impulse current: 6A Version: ESD Mounting: SMD Case: DFN2510-10 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 4 Capacitance: 0.28pF Application: automotive industry Kind of package: reel; tape |
auf Bestellung 2680 Stücke: Lieferzeit 14-21 Tag (e) |
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| GPT65C0YME |
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Hersteller: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 31A
Power dissipation: 38W
Case: DFN8080
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: tape
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 31A
Power dissipation: 38W
Case: DFN8080
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GPT65Z4YMR |
|
Hersteller: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 80A
Case: DFN8080
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tape
Power dissipation: 67.5W
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 80A
Case: DFN8080
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tape
Power dissipation: 67.5W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UT8005B |
|
Hersteller: MGT BRIGHTEK
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape
Capacitance: 15pF
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 1µA
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 12.5A
Application: automotive industry
Semiconductor structure: bidirectional
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape
Capacitance: 15pF
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 1µA
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 12.5A
Application: automotive industry
Semiconductor structure: bidirectional
Version: ESD
auf Bestellung 11756 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1200+ | 0.061 EUR |
| 1250+ | 0.058 EUR |
| 1300+ | 0.055 EUR |
| UT817ZB |
|
Hersteller: MGT BRIGHTEK
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.18pF
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.18pF
auf Bestellung 11125 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 575+ | 0.13 EUR |
| 600+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| UT8413A |
|
Hersteller: MGT BRIGHTEK
Category: Protection diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5...8.5V
Max. forward impulse current: 5A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.45pF
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5...8.5V
Max. forward impulse current: 5A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.45pF
Application: automotive industry
Kind of package: reel; tape
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 610+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 695+ | 0.1 EUR |
| UT848ZA |
|
Hersteller: MGT BRIGHTEK
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5...16V
Max. forward impulse current: 6A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.28pF
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5...16V
Max. forward impulse current: 6A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.28pF
Application: automotive industry
Kind of package: reel; tape
auf Bestellung 2680 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 370+ | 0.19 EUR |
| 435+ | 0.16 EUR |
| 475+ | 0.15 EUR |