Produkte > MGT BRIGHTEK > Alle Produkte des Herstellers MGT BRIGHTEK (7) > Seite 1 nach 1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AB37S | MGT BRIGHTEK |
 Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: MOSFET; SOP4; 37; 60V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: MOSFET Case: SOP4 Turn-on time: 0.2ms Turn-off time: 50µs Manufacturer series: 37 Operating voltage: 60V |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| GPT65C0YME | MGT BRIGHTEK |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Technology: GaN Case: DFN8080 Mounting: SMD Kind of package: tape On-state resistance: 245mΩ Pulsed drain current: 31A Power dissipation: 38W Gate charge: 22nC Polarisation: unipolar Drain current: 6A Drain-source voltage: 650V Kind of transistor: cascode; HEMT Type of transistor: N-JFET / N-MOSFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| GPT65Z4YMR | MGT BRIGHTEK |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Technology: GaN Case: DFN8080 Mounting: SMD Kind of package: tape On-state resistance: 0.13Ω Pulsed drain current: 80A Power dissipation: 67.5W Gate charge: 38nC Polarisation: unipolar Drain current: 11.5A Drain-source voltage: 650V Kind of transistor: cascode; HEMT Type of transistor: N-JFET / N-MOSFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
UT8005B | MGT BRIGHTEK |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape Capacitance: 15pF Mounting: SMD Case - inch: 0201 Case - mm: 0603 Leakage current: 1µA Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 12.5A Version: ESD Application: automotive industry Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: bidirectional |
auf Bestellung 11756 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
UT817ZB | MGT BRIGHTEK |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: bidirectional Mounting: SMD Kind of package: reel; tape Leakage current: 1µA Capacitance: 0.18pF Case - inch: 0201 Case - mm: 0603 |
auf Bestellung 11100 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
UT8413A | MGT BRIGHTEK |
Category: Protection diodes - arrays Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape Type of diode: TVS array Max. off-state voltage: 3.3V Breakdown voltage: 5...8.5V Max. forward impulse current: 5A Case: DFN2510-10 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Application: automotive industry Capacitance: 0.45pF Number of channels: 4 |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
UT848ZA | MGT BRIGHTEK |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape Type of diode: TVS array Max. off-state voltage: 3.3V Breakdown voltage: 6.5...16V Max. forward impulse current: 6A Case: DFN2510-10 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Application: automotive industry Capacitance: 0.28pF Number of channels: 4 |
auf Bestellung 2665 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AB37S |
|
Hersteller: MGT BRIGHTEK
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; SOP4; 37; 60V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Case: SOP4
Turn-on time: 0.2ms
Turn-off time: 50µs
Manufacturer series: 37
Operating voltage: 60V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: MOSFET; SOP4; 37; 60V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: MOSFET
Case: SOP4
Turn-on time: 0.2ms
Turn-off time: 50µs
Manufacturer series: 37
Operating voltage: 60V
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| GPT65C0YME |
|
Hersteller: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Technology: GaN
Case: DFN8080
Mounting: SMD
Kind of package: tape
On-state resistance: 245mΩ
Pulsed drain current: 31A
Power dissipation: 38W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 650V
Kind of transistor: cascode; HEMT
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Technology: GaN
Case: DFN8080
Mounting: SMD
Kind of package: tape
On-state resistance: 245mΩ
Pulsed drain current: 31A
Power dissipation: 38W
Gate charge: 22nC
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 650V
Kind of transistor: cascode; HEMT
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GPT65Z4YMR |
|
Hersteller: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Technology: GaN
Case: DFN8080
Mounting: SMD
Kind of package: tape
On-state resistance: 0.13Ω
Pulsed drain current: 80A
Power dissipation: 67.5W
Gate charge: 38nC
Polarisation: unipolar
Drain current: 11.5A
Drain-source voltage: 650V
Kind of transistor: cascode; HEMT
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Technology: GaN
Case: DFN8080
Mounting: SMD
Kind of package: tape
On-state resistance: 0.13Ω
Pulsed drain current: 80A
Power dissipation: 67.5W
Gate charge: 38nC
Polarisation: unipolar
Drain current: 11.5A
Drain-source voltage: 650V
Kind of transistor: cascode; HEMT
Type of transistor: N-JFET / N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| UT8005B |
|
Hersteller: MGT BRIGHTEK
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape
Capacitance: 15pF
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Leakage current: 1µA
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 12.5A
Version: ESD
Application: automotive industry
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape
Capacitance: 15pF
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Leakage current: 1µA
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 12.5A
Version: ESD
Application: automotive industry
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
auf Bestellung 11756 Stücke:
Lieferzeit 14-21 Tag (e)
| UT817ZB |
|
Hersteller: MGT BRIGHTEK
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Capacitance: 0.18pF
Case - inch: 0201
Case - mm: 0603
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Capacitance: 0.18pF
Case - inch: 0201
Case - mm: 0603
auf Bestellung 11100 Stücke:
Lieferzeit 14-21 Tag (e)
| UT8413A |
|
Hersteller: MGT BRIGHTEK
Category: Protection diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5...8.5V
Max. forward impulse current: 5A
Case: DFN2510-10
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.45pF
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5...8.5V
Max. forward impulse current: 5A
Case: DFN2510-10
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.45pF
Number of channels: 4
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
| UT848ZA |
|
Hersteller: MGT BRIGHTEK
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 6.5...16V
Max. forward impulse current: 6A
Case: DFN2510-10
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.28pF
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 6.5...16V
Max. forward impulse current: 6A
Case: DFN2510-10
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.28pF
Number of channels: 4
auf Bestellung 2665 Stücke:
Lieferzeit 14-21 Tag (e)