Produkte > MGT BRIGHTEK > Alle Produkte des Herstellers MGT BRIGHTEK (6) > Seite 1 nach 1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| GPT65C0YME | MGT BRIGHTEK |
 Category: SMD N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET / N-MOSFET Technology: GaN Drain-source voltage: 650V Drain current: 6A Power dissipation: 38W Gate-source voltage: ±20V On-state resistance: 245mΩ Mounting: SMD Gate charge: 22nC Pulsed drain current: 31A Polarisation: unipolar Kind of transistor: cascode; HEMT Kind of package: tape Case: DFN8080 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| GPT65Z4YMR | MGT BRIGHTEK |
Category: SMD N channel transistors Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V Type of transistor: N-JFET / N-MOSFET Technology: GaN Drain-source voltage: 650V Drain current: 11.5A Power dissipation: 67.5W Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 38nC Pulsed drain current: 80A Polarisation: unipolar Kind of transistor: cascode; HEMT Kind of package: tape Case: DFN8080 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
UT8005B | MGT BRIGHTEK |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 12.5A Semiconductor structure: bidirectional Case - inch: 0201 Case - mm: 0603 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 15pF Application: automotive industry |
auf Bestellung 11756 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
UT817ZB | MGT BRIGHTEK |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: bidirectional Case - inch: 0201 Case - mm: 0603 Mounting: SMD Leakage current: 1µA Capacitance: 0.18pF Kind of package: reel; tape |
auf Bestellung 11125 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
UT8413A | MGT BRIGHTEK |
Category: Protection diodes - arrays Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 5...8.5V Max. forward impulse current: 5A Version: ESD Mounting: SMD Case: DFN2510-10 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 4 Capacitance: 0.45pF Application: automotive industry Kind of package: reel; tape |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
UT848ZA | MGT BRIGHTEK |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6.5...16V Max. forward impulse current: 6A Version: ESD Mounting: SMD Case: DFN2510-10 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 4 Capacitance: 0.28pF Application: automotive industry Kind of package: reel; tape |
auf Bestellung 2665 Stücke: Lieferzeit 14-21 Tag (e) |
|
| GPT65C0YME |
|
Hersteller: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 38W
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 22nC
Pulsed drain current: 31A
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Kind of package: tape
Case: DFN8080
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 38W
Gate-source voltage: ±20V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 22nC
Pulsed drain current: 31A
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Kind of package: tape
Case: DFN8080
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GPT65Z4YMR |
|
Hersteller: MGT BRIGHTEK
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Drain-source voltage: 650V
Drain current: 11.5A
Power dissipation: 67.5W
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 38nC
Pulsed drain current: 80A
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Kind of package: tape
Case: DFN8080
Category: SMD N channel transistors
Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V
Type of transistor: N-JFET / N-MOSFET
Technology: GaN
Drain-source voltage: 650V
Drain current: 11.5A
Power dissipation: 67.5W
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 38nC
Pulsed drain current: 80A
Polarisation: unipolar
Kind of transistor: cascode; HEMT
Kind of package: tape
Case: DFN8080
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| UT8005B |
|
Hersteller: MGT BRIGHTEK
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 12.5A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 15pF
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 12.5A; bidirectional; 0201; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 12.5A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 15pF
Application: automotive industry
auf Bestellung 11756 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1175+ | 0.073 EUR |
| 1225+ | 0.07 EUR |
| 1275+ | 0.067 EUR |
| UT817ZB |
|
Hersteller: MGT BRIGHTEK
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.18pF
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6V; 4A; bidirectional; 0201; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: bidirectional
Case - inch: 0201
Case - mm: 0603
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.18pF
Kind of package: reel; tape
auf Bestellung 11125 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 550+ | 0.15 EUR |
| 600+ | 0.14 EUR |
| UT8413A |
|
Hersteller: MGT BRIGHTEK
Category: Protection diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5...8.5V
Max. forward impulse current: 5A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.45pF
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5÷8.5V; 5A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5...8.5V
Max. forward impulse current: 5A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.45pF
Application: automotive industry
Kind of package: reel; tape
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 610+ | 0.14 EUR |
| 645+ | 0.13 EUR |
| 685+ | 0.12 EUR |
| UT848ZA |
|
Hersteller: MGT BRIGHTEK
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5...16V
Max. forward impulse current: 6A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.28pF
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5÷16V; 6A; ESD; DFN2510-10; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5...16V
Max. forward impulse current: 6A
Version: ESD
Mounting: SMD
Case: DFN2510-10
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.28pF
Application: automotive industry
Kind of package: reel; tape
auf Bestellung 2665 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 365+ | 0.24 EUR |
| 435+ | 0.2 EUR |
| 465+ | 0.18 EUR |