Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276045) > Seite 1899 nach 4601
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DSC1001DI1-002.0000T | Microchip Technology |
 Description: MEMS OSC XO 2.0000MHZ CMOS SMDPackaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 8mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 2 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-029.4912T | Microchip Technology |
Description: MEMS OSC XO 29.4912MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 29.49152 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-036.0000T | Microchip Technology |
Description: MEMS OSC AUTO LOWPWR -40C-85C Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 36 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-027.0000T | Microchip Technology |
Description: MEMS OSC XO 27.0000MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 8mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 27 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-030.0000T | Microchip Technology |
Description: MEMS OSC XO 30.0000MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 30 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-007.3728T | Microchip Technology |
Description: MEMS OSC XO 7.3728MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 8mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 7.3728 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-003.6864T | Microchip Technology |
Description: MEMS OSC XO 3.6864MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 8mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 3.6864 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-005.0000T | Microchip Technology |
Description: MEMS OSC XO 5.0000MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 8mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 5 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-004.0000T | Microchip Technology |
Description: MEMS OSC XO 4.0000MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 8mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 4 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-018.4320T | Microchip Technology |
Description: MEMS OSC XO 18.4320MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 8mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 18.432 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-020.0000T | Microchip Technology |
Description: MEMS OSC XO 20.0000MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 8mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 20 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-024.5760T | Microchip Technology |
Description: MEMS OSC XO 24.5760MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 8mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 24.576 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-033.3330T | Microchip Technology |
Description: MEMS OSC XO 33.3330MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 33.333 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-016.0000T | Microchip Technology |
Description: MEMS OSC XO 16.0000MHZ CMOS SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 8mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 16 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-028.6360T | Microchip Technology |
Description: OSC MEMS AUTO -40C-85C SMD Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 28.636 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
DSC1001DI1-028.6364T | Microchip Technology |
Description: MEMS OSC., LOW POWER, 28.6364MHZ Packaging: Strip Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 28.6364 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
CD4731A | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: Die Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 455 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
CDLL4731A/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-213AB Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 358 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
CDLL4731Ae3 | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 258 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| 1N2138 | Microchip Technology |
Description: DIODE GEN PURP 600V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2131R | Microchip Technology |
Description: DIODE GEN PURP REV 200V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2137 | Microchip Technology |
Description: DIODE GEN PURP 500V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 500 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2135 | Microchip Technology |
Description: DIODE GEN PURP 400V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2131 | Microchip Technology |
Description: DIODE GEN PURP 200V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2137R | Microchip Technology |
Description: DIODE GEN PURP REV 500V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 500 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2135R | Microchip Technology |
Description: DIODE GEN PURP REV 400V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2137AR | Microchip Technology |
Description: DIODE GEN PURP REV 500V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 500 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2138AR | Microchip Technology |
Description: DIODE GEN PURP REV 600V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2138A | Microchip Technology |
Description: DIODE GEN PURP 600V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2135RA | Microchip Technology |
Description: DIODE GEN PURP REV 400V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2135A | Microchip Technology |
Description: DIODE GEN PURP 400V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2137RA | Microchip Technology |
Description: DIODE GEN PURP REV 500V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 500 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2131A | Microchip Technology |
Description: DIODE GEN PURP 200V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N2135AR | Microchip Technology |
Description: DIODE GEN PURP REV 400V 70A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 70A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N3209 | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N3209R | Microchip Technology |
Description: STANDARD RECTIFIER Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| PM50028B1-FEI | Microchip Technology |
Description: PFX 28XG5 FANOUT PCIE SWITCH Packaging: Tray Interface: 2-Wire, GMII, GPIO, JTAG, PCIe, RMII, UART Applications: Fanout PCIe Switch |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||
 |
PM40028B1-F3EI | Microchip Technology |
Description: IC PFX 28XG4, 28-LANE PCIE SWITC Supplier Device Package: 753-BBGA (29x29) Applications: Fanout PCIe Switch Interface: PCI Mounting Type: Surface Mount Package / Case: 753-BGA Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| M1.5KE170A | Microchip Technology |
Description: TVS DIODE 145VWM 234VC CASE-1 Qualification: MIL-PRF-19500 Grade: Military Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 234V Voltage - Breakdown (Min): 162V Unidirectional Channels: 1 Supplier Device Package: CASE-1 Voltage - Reverse Standoff (Typ): 145V Current - Peak Pulse (10/1000µs): 6.4A Applications: General Purpose Operating Temperature: -65°C ~ 150°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
TVS328e3 | Microchip Technology |
Description: TVS DIODE 28VWM 46VC A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.2A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: A, SQ-MELF Unidirectional Channels: 1 Voltage - Breakdown (Min): 30.7V Voltage - Clamping (Max) @ Ipp: 46V Power - Peak Pulse: 150W Power Line Protection: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
TVS324e3 | Microchip Technology |
Description: TVS DIODE 24VWM 42VC A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.6A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: A, SQ-MELF Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.4V Voltage - Clamping (Max) @ Ipp: 42V Power - Peak Pulse: 150W Power Line Protection: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
tvs324e3/tr | Microchip Technology |
Description: TVS DIODE 24VWM 42VC A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.6A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: A, SQ-MELF Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.4V Voltage - Clamping (Max) @ Ipp: 42V Power - Peak Pulse: 150W Power Line Protection: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
TVS324/TR | Microchip Technology |
Description: TVS DIODE 24VWM 42VC AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.6A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: A, Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.4V Voltage - Clamping (Max) @ Ipp: 42V Power - Peak Pulse: 150W Power Line Protection: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
APT20M16LFLLG | Microchip Technology |
Description: MOSFET N-CH 200V 100A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
APT20M20B2FLLG | Microchip Technology |
Description: MOSFET N-CH 200V 100A T-MAX Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Supplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
APT20M18B2VRG | Microchip Technology |
Description: MOSFET N-CH 200V 100A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
APT10M09LVFRG | Microchip Technology |
Description: MOSFET N-CH 100V 100A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
APT20M20LFLLG | Microchip Technology |
Description: MOSFET N-CH 200V 100A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| 1N5810 | Microchip Technology |
Description: DIODE GEN PURP 6A AXIAL Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Supplier Device Package: Axial Current - Average Rectified (Io): 6A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
EV33A17A | Microchip Technology |
Description: PIC32CK SG01 CURIOSITY ULTRA Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: PIC32 Utilized IC / Part: PIC32CK SG01 Platform: Curiosity Ultra |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
PIC32MZ1025DAH176T-I/2J | Microchip Technology |
Description: IC MCU 32BIT 1MB FLASH 176LQFP Packaging: Tape & Reel (TR) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 1MB (1M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: MIPS32® microAptiv™ Data Converters: A/D 45x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT Supplier Device Package: 176-LQFP (20x20) Number of I/O: 120 DigiKey Programmable: Not Verified |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
|
|
PIC32MZ1025DAH176T-I/2J | Microchip Technology |
Description: IC MCU 32BIT 1MB FLASH 176LQFP Packaging: Cut Tape (CT) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 1MB (1M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: MIPS32® microAptiv™ Data Converters: A/D 45x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT Supplier Device Package: 176-LQFP (20x20) Number of I/O: 120 DigiKey Programmable: Not Verified |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
|
|
JAN1N5806/TR | Microchip Technology |
Description: DIODE GEN PURP 150V 2.5A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 154 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
JANTX1N5806/TR | Microchip Technology |
Description: DIODE GEN PURP 150V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 141 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
1N5806e3/TR | Microchip Technology |
Description: DIODE GEN PURP 150V 2.5A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 154 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
 |
JANTXV1N5806 | Microchip Technology |
Description: DIODE GEN PURP 150V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 162 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
JANTXV1N5806/TR | Microchip Technology |
Description: DIODE GEN PURP 150V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 159 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANHCE1N5806 | Microchip Technology |
Description: DIODE GEN PURP 150V 1A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
JAN1N5806URS | Microchip Technology |
Description: DIODE GEN PURP 150V 1A A-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
JAN1N5806URS/TR | Microchip Technology |
Description: UFR,FRR Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DSC1001DI1-002.0000T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 2 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 2.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 2 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-029.4912T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 29.4912MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 29.49152 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 29.4912MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 29.49152 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-036.0000T |
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 36 MHz
Base Resonator: MEMS
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 36 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-027.0000T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 27.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 27 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 27.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 27 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-030.0000T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 30.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 30 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 30.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 30 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-007.3728T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 7.3728MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 7.3728 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 7.3728MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 7.3728 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-003.6864T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 3.6864MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 3.6864 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 3.6864MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 3.6864 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-005.0000T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 5.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 5 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 5.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 5 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-004.0000T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 4.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 4.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-018.4320T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 18.4320MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 18.432 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 18.4320MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 18.432 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-020.0000T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 20.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 20 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 20.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 20 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-024.5760T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 24.5760MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 24.576 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 24.5760MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 24.576 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-033.3330T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 33.3330MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 33.333 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 33.3330MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 33.333 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-016.0000T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 16.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 16 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 16.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 16 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-028.6360T |
|
Hersteller: Microchip Technology
Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.636 MHz
Base Resonator: MEMS
Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.636 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC1001DI1-028.6364T |
|
Hersteller: Microchip Technology
Description: MEMS OSC., LOW POWER, 28.6364MHZ
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.6364 MHz
Base Resonator: MEMS
Description: MEMS OSC., LOW POWER, 28.6364MHZ
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.6364 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CD4731A |
|
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: Die
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: Die
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 455 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CDLL4731A/TR |
|
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 358 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CDLL4731Ae3 |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 258 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2138 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GEN PURP 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2131R |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE GEN PURP REV 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2137 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
Description: DIODE GEN PURP 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2135 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE GEN PURP 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2131 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE GEN PURP 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2137R |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2135R |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2137AR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2138AR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GEN PURP REV 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2138A |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GEN PURP 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2135RA |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2135A |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE GEN PURP 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2137RA |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2131A |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE GEN PURP 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N2135AR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N3209 |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N3209R |
|
Hersteller: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PM50028B1-FEI |
|
Hersteller: Microchip Technology
Description: PFX 28XG5 FANOUT PCIE SWITCH
Packaging: Tray
Interface: 2-Wire, GMII, GPIO, JTAG, PCIe, RMII, UART
Applications: Fanout PCIe Switch
Description: PFX 28XG5 FANOUT PCIE SWITCH
Packaging: Tray
Interface: 2-Wire, GMII, GPIO, JTAG, PCIe, RMII, UART
Applications: Fanout PCIe Switch
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 597.5 EUR |
| 25+ | 496.62 EUR |
| PM40028B1-F3EI |
|
Hersteller: Microchip Technology
Description: IC PFX 28XG4, 28-LANE PCIE SWITC
Supplier Device Package: 753-BBGA (29x29)
Applications: Fanout PCIe Switch
Interface: PCI
Mounting Type: Surface Mount
Package / Case: 753-BGA
Packaging: Tray
Description: IC PFX 28XG4, 28-LANE PCIE SWITC
Supplier Device Package: 753-BBGA (29x29)
Applications: Fanout PCIe Switch
Interface: PCI
Mounting Type: Surface Mount
Package / Case: 753-BGA
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M1.5KE170A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 145VWM 234VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 234V
Voltage - Breakdown (Min): 162V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 145V
Current - Peak Pulse (10/1000µs): 6.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Description: TVS DIODE 145VWM 234VC CASE-1
Qualification: MIL-PRF-19500
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 234V
Voltage - Breakdown (Min): 162V
Unidirectional Channels: 1
Supplier Device Package: CASE-1
Voltage - Reverse Standoff (Typ): 145V
Current - Peak Pulse (10/1000µs): 6.4A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TVS328e3 |
Hersteller: Microchip Technology
Description: TVS DIODE 28VWM 46VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.7V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: TVS DIODE 28VWM 46VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.7V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TVS324e3 |
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| tvs324e3/tr |
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TVS324/TR |
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 42VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: TVS DIODE 24VWM 42VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT20M16LFLLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 42.98 EUR |
| APT20M20B2FLLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT20M18B2VRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT10M09LVFRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V
Description: MOSFET N-CH 100V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT20M20LFLLG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N5810 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 6A AXIAL
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Supplier Device Package: Axial
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Description: DIODE GEN PURP 6A AXIAL
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Supplier Device Package: Axial
Current - Average Rectified (Io): 6A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EV33A17A |
|
Hersteller: Microchip Technology
Description: PIC32CK SG01 CURIOSITY ULTRA
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: PIC32
Utilized IC / Part: PIC32CK SG01
Platform: Curiosity Ultra
Description: PIC32CK SG01 CURIOSITY ULTRA
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: PIC32
Utilized IC / Part: PIC32CK SG01
Platform: Curiosity Ultra
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 188.46 EUR |
| PIC32MZ1025DAH176T-I/2J |
|
Hersteller: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 700+ | 27.18 EUR |
| PIC32MZ1025DAH176T-I/2J |
|
Hersteller: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 32.72 EUR |
| 25+ | 30 EUR |
| 100+ | 27.18 EUR |
| JAN1N5806/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 150V 2.5A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
Mindestbestellmenge: 154 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N5806/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
Mindestbestellmenge: 141 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N5806e3/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE GEN PURP 150V 2.5A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 154 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5806 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 150V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
Mindestbestellmenge: 162 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5806/TR |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
Mindestbestellmenge: 159 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANHCE1N5806 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE GEN PURP 150V 1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N5806URS |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 150V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N5806URS/TR |
|
Hersteller: Microchip Technology
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH