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1N5239BDO35 1N5239BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Produkt ist nicht verfügbar
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1N5245BDO35 1N5245BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar
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1N5251BDO35 1N5251BDO35 Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 22V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Produkt ist nicht verfügbar
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1N5262BDO35 1N5262BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 51V 500MW DO35
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1N5263BDO35 1N5263BDO35 Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 56V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Produkt ist nicht verfügbar
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1N5264BDO35 1N5264BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 60V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
auf Bestellung 1935 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.15 EUR
Mindestbestellmenge: 5
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1N5265BDO35 1N5265BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 62V 500MW DO204AH
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 185 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
auf Bestellung 8938 Stücke:
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4+4.84 EUR
100+4.48 EUR
Mindestbestellmenge: 4
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1N5266BDO35 1N5266BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 68V 500MW DO35
Produkt ist nicht verfügbar
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1N5267BDO35 1N5267BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 75V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Produkt ist nicht verfügbar
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1N5268BDO35 1N5268BDO35 Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 82V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
Produkt ist nicht verfügbar
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1N5270BDO35 1N5270BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 91V 500MW DO35
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1N5272BDO35 1N5272BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 110V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 84 V
Produkt ist nicht verfügbar
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1N5273BDO35 1N5273BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 120V 500MW DO204AH
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 900 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 91 V
Produkt ist nicht verfügbar
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1N5274BDO35 1N5274BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 130V 500MW DO35
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1N5276BDO35 1N5276BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 150V 500MW DO35
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1N5278BDO35TR 1N5278BDO35TR Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 170V 500MW DO204AH
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 170 V
Impedance (Max) (Zzt): 1900 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 129 V
auf Bestellung 4808 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.89 EUR
100+4.57 EUR
Mindestbestellmenge: 4
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1N5243A (DO-35) 1N5243A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Produkt ist nicht verfügbar
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1N5243B (DO-35) 1N5243B (DO-35) Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 13V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Produkt ist nicht verfügbar
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1N5244A (DO-35) 1N5244A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Produkt ist nicht verfügbar
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1N5244B (DO-35) 1N5244B (DO-35) Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 14V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Produkt ist nicht verfügbar
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1N5245A (DO-35) 1N5245A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 15V 500MW DO35
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Produkt ist nicht verfügbar
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1N5245B (DO-35) 1N5245B (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar
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LX1686CPW LX1686CPW Microsemi Corporation LX1686.pdf Description: IC CCFL CNTRL 116KHZ 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 84kHz ~ 116kHz
Type: CCFL Controller
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 24-TSSOP
Dimming: Yes
Current - Supply: 5 mA
Produkt ist nicht verfügbar
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LX1686ECPW LX1686ECPW Microsemi Corporation 9012-lx1686e-pdf Description: IC CCFL CNTRL 116KHZ 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 84kHz ~ 116kHz
Type: CCFL Controller
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 24-TSSOP
Dimming: Yes
Current - Supply: 5 mA
Produkt ist nicht verfügbar
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JAN2N6788 JAN2N6788 Microsemi Corporation 8974-lds-0164-datasheet Description: MOSFET N-CH 100V 6A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/555
Produkt ist nicht verfügbar
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JAN2N6788U Microsemi Corporation 125273-lds-0164-1-datasheet Description: MOSFET N-CH 100V 4.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Produkt ist nicht verfügbar
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JAN2N6790 JAN2N6790 Microsemi Corporation 8974-lds-0164-datasheet Description: MOSFET N-CH 200V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Produkt ist nicht verfügbar
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JAN2N6790U Microsemi Corporation 125273-lds-0164-1-datasheet Description: MOSFET N-CH 200V 2.8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Produkt ist nicht verfügbar
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JANTX2N6788 JANTX2N6788 Microsemi Corporation 8974-lds-0164-datasheet Description: MOSFET N-CH 100V 6A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
Produkt ist nicht verfügbar
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JANTX2N6788U Microsemi Corporation 125273-lds-0164-1-datasheet Description: MOSFET N-CH 100V 4.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
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JANTX2N6790 JANTX2N6790 Microsemi Corporation 8974-lds-0164-datasheet Description: MOSFET N-CH 200V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Qualification: MIL-PRF-19500/555
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JANTX2N6790U Microsemi Corporation 125273-lds-0164-1-datasheet Description: MOSFET N-CH 200V 2.8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Qualification: MIL-PRF-19500/555
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JANTXV2N6788 Microsemi Corporation 8974-lds-0164-datasheet Description: MOSFET N-CH 100V 6A TO205AF
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JANTXV2N6788U Microsemi Corporation 125273-lds-0164-1-datasheet Description: MOSFET N-CH 100V 4.5A 18ULCC
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JANTXV2N6790 Microsemi Corporation 8974-lds-0164-datasheet Description: MOSFET N-CH 200V 3.5A TO205AF
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JANTXV2N6790U Microsemi Corporation 125273-lds-0164-1-datasheet Description: MOSFET N-CH 200V 2.8A 18ULCC
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SD1057-01H Microsemi Corporation Description: RF POWER TRANSISTOR
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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2N5031 Microsemi Corporation 6081-2n5031-rev-datasheet Description: RF TRANS NPN 10V 400MHZ TO-72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Gain: 12dB @ 400MHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V
Frequency - Transition: 400MHz
Supplier Device Package: TO-72
Part Status: Obsolete
Produkt ist nicht verfügbar
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A2F060M3E-1CSG288 Microsemi Corporation SmartFusion_cSoC_Rev13.pdf Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Produkt ist nicht verfügbar
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A2F060M3E-1CSG288I Microsemi Corporation SmartFusion_cSoC_Rev13.pdf Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Produkt ist nicht verfügbar
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A2F060M3E-CSG288 Microsemi Corporation SmartFusion_cSoC_Rev13.pdf Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Produkt ist nicht verfügbar
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A2F060M3E-CSG288I Microsemi Corporation SmartFusion_cSoC_Rev13.pdf Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Produkt ist nicht verfügbar
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1.5KE180CAE3/TR13 1.5KE180CAE3/TR13 Microsemi Corporation DS_278_1.5KE%20Series.pdf Description: TVS DIODE 154VWM 246VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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JAN1N6104US JAN1N6104US Microsemi Corporation 127892-lds-0277-1-datasheet Description: TVS DIODE 6.2VWM 12.71VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39.24A
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.4V
Voltage - Clamping (Max) @ Ipp: 12.71V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMAJ6486CE3/TR13 SMAJ6486CE3/TR13 Microsemi Corporation SMAJ4460-96;SMAJ6485-91.pdf Description: DIODE ZENER 3.6V 1.5W DO214AC
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SMAJ6486E3/TR13 SMAJ6486E3/TR13 Microsemi Corporation SMAJ4460-96;SMAJ6485-91.pdf Description: DIODE ZENER 3.6V 1.5W DO214AC
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SMAJ6487CE3/TR13 SMAJ6487CE3/TR13 Microsemi Corporation SMAJ4460-96;SMAJ6485-91.pdf Description: DIODE ZENER 3.9V 1.5W DO214AC
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SMAJ6487E3/TR13 SMAJ6487E3/TR13 Microsemi Corporation SMAJ4460-96;SMAJ6485-91.pdf Description: DIODE ZENER 3.9V 1.5W DO214AC
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SMAJ6488CE3/TR13 SMAJ6488CE3/TR13 Microsemi Corporation SMAJ4460-96;SMAJ6485-91.pdf Description: DIODE ZENER 4.3V 1.5W DO214AC
Produkt ist nicht verfügbar
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SMAJ6488E3/TR13 SMAJ6488E3/TR13 Microsemi Corporation SMAJ4460-96;SMAJ6485-91.pdf Description: DIODE ZENER 4.3V 1.5W DO214AC
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SMAJ6489CE3/TR13 SMAJ6489CE3/TR13 Microsemi Corporation SMAJ4460-96%3BSMAJ6485-91.pdf Description: DIODE ZENER 4.7V 1.5W DO214AC
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-214AC (SMAJ)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Produkt ist nicht verfügbar
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SMAJ6489E3/TR13 SMAJ6489E3/TR13 Microsemi Corporation SMAJ4460-96%3BSMAJ6485-91.pdf Description: DIODE ZENER 4.7V 1.5W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-214AC (SMAJ)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Produkt ist nicht verfügbar
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SMAJ6490CE3/TR13 SMAJ6490CE3/TR13 Microsemi Corporation SMAJ4460-96;SMAJ6485-91.pdf Description: DIODE ZENER 5.1V 1.5W DO214AC
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SMAJ6490E3/TR13 SMAJ6490E3/TR13 Microsemi Corporation SMAJ4460-96;SMAJ6485-91.pdf Description: DIODE ZENER 5.1V 1.5W DO214AC
Produkt ist nicht verfügbar
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SMAJ6491CE3/TR13 SMAJ6491CE3/TR13 Microsemi Corporation SMAJ4460-96;SMAJ6485-91.pdf Description: DIODE ZENER 5.6V 1.5W DO214AC
Produkt ist nicht verfügbar
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SMAJ6491E3/TR13 SMAJ6491E3/TR13 Microsemi Corporation SMAJ4460-96;SMAJ6485-91.pdf Description: DIODE ZENER 5.6V 1.5W DO214AC
Produkt ist nicht verfügbar
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1N4740 G 1N4740 G Microsemi Corporation 10912-sa5-35-datasheet Description: DIODE ZENER 10V 1W DO204AL
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
Produkt ist nicht verfügbar
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MSG105 MSG105 Microsemi Corporation 8476-coc-51-pdf Description: DIODE SCHOTTKY 50V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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150-709 Microsemi Corporation 133278-gps-in-line-lightning-arrestor Description: TVS DEVICE MIXD LIGHTNING ARREST
Packaging: Bag
Mounting Type: In Line
Applications: GPS
Technology: Mixed Technology
Number of Circuits: 1
Produkt ist nicht verfügbar
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1N5264B (DO-35) 1N5264B (DO-35) Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 60V 500MW DO35
Produkt ist nicht verfügbar
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1N5239BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5239BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Produkt ist nicht verfügbar
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1N5245BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5245BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar
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1N5251BDO35 1N5221 - 1N5281B, e3 DO-35.pdf
1N5251BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 22V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Produkt ist nicht verfügbar
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1N5262BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5262BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 51V 500MW DO35
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1N5263BDO35 1N5221 - 1N5281B, e3 DO-35.pdf
1N5263BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 56V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Produkt ist nicht verfügbar
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1N5264BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5264BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 60V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
auf Bestellung 1935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.15 EUR
Mindestbestellmenge: 5
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1N5265BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5265BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 62V 500MW DO204AH
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 185 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
auf Bestellung 8938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.84 EUR
100+4.48 EUR
Mindestbestellmenge: 4
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1N5266BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5266BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 68V 500MW DO35
Produkt ist nicht verfügbar
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1N5267BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5267BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
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1N5268BDO35 1N5221 - 1N5281B, e3 DO-35.pdf
1N5268BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
Produkt ist nicht verfügbar
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1N5270BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5270BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 91V 500MW DO35
Produkt ist nicht verfügbar
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1N5272BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5272BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 84 V
Produkt ist nicht verfügbar
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1N5273BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5273BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 120V 500MW DO204AH
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 900 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 91 V
Produkt ist nicht verfügbar
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1N5274BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5274BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 500MW DO35
Produkt ist nicht verfügbar
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1N5276BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5276BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 500MW DO35
Produkt ist nicht verfügbar
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1N5278BDO35TR 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5278BDO35TR
Hersteller: Microsemi Corporation
Description: DIODE ZENER 170V 500MW DO204AH
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 170 V
Impedance (Max) (Zzt): 1900 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 129 V
auf Bestellung 4808 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.89 EUR
100+4.57 EUR
Mindestbestellmenge: 4
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1N5243A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5243A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Produkt ist nicht verfügbar
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1N5243B (DO-35) 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5243B (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 13V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Produkt ist nicht verfügbar
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1N5244A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5244A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Produkt ist nicht verfügbar
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1N5244B (DO-35) 1N5221 - 1N5281B, e3 DO-35.pdf
1N5244B (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 14V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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1N5245A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5245A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 15V 500MW DO35
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
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1N5245B (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5245B (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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LX1686CPW LX1686.pdf
LX1686CPW
Hersteller: Microsemi Corporation
Description: IC CCFL CNTRL 116KHZ 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 84kHz ~ 116kHz
Type: CCFL Controller
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 24-TSSOP
Dimming: Yes
Current - Supply: 5 mA
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LX1686ECPW 9012-lx1686e-pdf
LX1686ECPW
Hersteller: Microsemi Corporation
Description: IC CCFL CNTRL 116KHZ 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 84kHz ~ 116kHz
Type: CCFL Controller
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 24-TSSOP
Dimming: Yes
Current - Supply: 5 mA
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JAN2N6788 8974-lds-0164-datasheet
JAN2N6788
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 6A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/555
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JAN2N6788U 125273-lds-0164-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 4.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
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JAN2N6790 8974-lds-0164-datasheet
JAN2N6790
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
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JAN2N6790U 125273-lds-0164-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 2.8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
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JANTX2N6788 8974-lds-0164-datasheet
JANTX2N6788
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 6A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
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JANTX2N6788U 125273-lds-0164-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 4.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
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JANTX2N6790 8974-lds-0164-datasheet
JANTX2N6790
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Qualification: MIL-PRF-19500/555
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JANTX2N6790U 125273-lds-0164-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 2.8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Qualification: MIL-PRF-19500/555
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JANTXV2N6788 8974-lds-0164-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 6A TO205AF
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JANTXV2N6788U 125273-lds-0164-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 4.5A 18ULCC
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JANTXV2N6790 8974-lds-0164-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 3.5A TO205AF
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JANTXV2N6790U 125273-lds-0164-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 2.8A 18ULCC
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SD1057-01H
Hersteller: Microsemi Corporation
Description: RF POWER TRANSISTOR
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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2N5031 6081-2n5031-rev-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 10V 400MHZ TO-72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Gain: 12dB @ 400MHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V
Frequency - Transition: 400MHz
Supplier Device Package: TO-72
Part Status: Obsolete
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A2F060M3E-1CSG288 SmartFusion_cSoC_Rev13.pdf
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
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A2F060M3E-1CSG288I SmartFusion_cSoC_Rev13.pdf
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
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A2F060M3E-CSG288 SmartFusion_cSoC_Rev13.pdf
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
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A2F060M3E-CSG288I SmartFusion_cSoC_Rev13.pdf
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
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1.5KE180CAE3/TR13 DS_278_1.5KE%20Series.pdf
1.5KE180CAE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 154VWM 246VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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JAN1N6104US 127892-lds-0277-1-datasheet
JAN1N6104US
Hersteller: Microsemi Corporation
Description: TVS DIODE 6.2VWM 12.71VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39.24A
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.4V
Voltage - Clamping (Max) @ Ipp: 12.71V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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SMAJ6486CE3/TR13 SMAJ4460-96;SMAJ6485-91.pdf
SMAJ6486CE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO214AC
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SMAJ6486E3/TR13 SMAJ4460-96;SMAJ6485-91.pdf
SMAJ6486E3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO214AC
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SMAJ6487CE3/TR13 SMAJ4460-96;SMAJ6485-91.pdf
SMAJ6487CE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.9V 1.5W DO214AC
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SMAJ6487E3/TR13 SMAJ4460-96;SMAJ6485-91.pdf
SMAJ6487E3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.9V 1.5W DO214AC
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SMAJ6488CE3/TR13 SMAJ4460-96;SMAJ6485-91.pdf
SMAJ6488CE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO214AC
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SMAJ6488E3/TR13 SMAJ4460-96;SMAJ6485-91.pdf
SMAJ6488E3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO214AC
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SMAJ6489CE3/TR13 SMAJ4460-96%3BSMAJ6485-91.pdf
SMAJ6489CE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 1.5W DO214AC
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-214AC (SMAJ)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
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SMAJ6489E3/TR13 SMAJ4460-96%3BSMAJ6485-91.pdf
SMAJ6489E3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 1.5W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-214AC (SMAJ)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
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SMAJ6490CE3/TR13 SMAJ4460-96;SMAJ6485-91.pdf
SMAJ6490CE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 1.5W DO214AC
Produkt ist nicht verfügbar
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SMAJ6490E3/TR13 SMAJ4460-96;SMAJ6485-91.pdf
SMAJ6490E3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 1.5W DO214AC
Produkt ist nicht verfügbar
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SMAJ6491CE3/TR13 SMAJ4460-96;SMAJ6485-91.pdf
SMAJ6491CE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 1.5W DO214AC
Produkt ist nicht verfügbar
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SMAJ6491E3/TR13 SMAJ4460-96;SMAJ6485-91.pdf
SMAJ6491E3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 1.5W DO214AC
Produkt ist nicht verfügbar
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1N4740 G 10912-sa5-35-datasheet
1N4740 G
Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 1W DO204AL
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
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MSG105 8476-coc-51-pdf
MSG105
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 50V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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150-709 133278-gps-in-line-lightning-arrestor
Hersteller: Microsemi Corporation
Description: TVS DEVICE MIXD LIGHTNING ARREST
Packaging: Bag
Mounting Type: In Line
Applications: GPS
Technology: Mixed Technology
Number of Circuits: 1
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1N5264B (DO-35) 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5264B (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 60V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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