Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11173) > Seite 159 nach 187
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APT60DQ120LCTG | Microsemi Corporation |
 Description: DIODE ARRAY GP 1200V 60A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-264 [L] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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APT15GP60KG | Microsemi Corporation |
Description: IGBT 600V 56A 250W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Supplier Device Package: TO-220 [K] IGBT Type: PT Td (on/off) @ 25°C: 8ns/29ns Switching Energy: 130µJ (on), 121µJ (off) Test Condition: 400V, 15A, 5Ohm, 15V Gate Charge: 55 nC Part Status: Obsolete Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 65 A Power - Max: 250 W |
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MXP5KE64CAe3 | Microsemi Corporation |
Description: TVS DIODE 64VWM 103VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.9A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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1N5362B | Microsemi Corporation |
Description: DIODE ZENER 28V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 28 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 20.1 V |
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APT38N60SC6 | Microsemi Corporation |
Description: MOSFET N-CH 600V 38A D3PAK Packaging: Bulk Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V |
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| MSAD100-12 | Microsemi Corporation |
Description: DIODE MODULE 1.2KV 100A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: D1 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 1200 V |
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APT12067B2LLG | Microsemi Corporation |
Description: MOSFET N-CH 1200V 18A T-MAX Packaging: Bulk Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V Power Dissipation (Max): 565W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V |
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| 2N2329U4 | Microsemi Corporation |
Description: SCR 400V 200UA U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 400 V |
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| JANTX2N2329AU4 | Microsemi Corporation |
Description: SCR 400V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 600 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 400 V |
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| JANTX2N2329U4 | Microsemi Corporation |
Description: SCR 400V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 400 V |
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| JAN2N2329AS | Microsemi Corporation |
Description: SCR 400V TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 600 mV Current - Off State (Max): 10 µA Supplier Device Package: TO-5 Part Status: Obsolete Voltage - Off State: 400 V |
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| JANTXV2N2329U4 | Microsemi Corporation |
Description: SCR 400V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 400 V |
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| JAN2N2329AU4 | Microsemi Corporation |
Description: SCR 400V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 600 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 400 V |
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| JAN2N2329U4 | Microsemi Corporation |
Description: SCR 400V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 400 V |
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| JANTXV2N2329AU4 | Microsemi Corporation |
Description: SCR 400V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 600 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 400 V |
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JANTXV2N2329A | Microsemi Corporation |
Description: SCR 400V TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 600 mV Supplier Device Package: TO-5 Part Status: Obsolete Voltage - Off State: 400 V |
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Jantxv2N2329S | Microsemi Corporation |
Description: SCR 400V TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Supplier Device Package: TO-39 (TO-205AD) Part Status: Obsolete Voltage - Off State: 400 V |
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JANTXV2N2329AS | Microsemi Corporation |
Description: SCR 400V TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 600 mV Supplier Device Package: TO-39 (TO-205AD) Part Status: Obsolete Voltage - Off State: 400 V |
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JANTXV2N2329 | Microsemi Corporation |
Description: SCR 400V TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Supplier Device Package: TO-39 (TO-205AD) Part Status: Obsolete Voltage - Off State: 400 V |
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| 2N2329AS | Microsemi Corporation |
Description: SCR 400V Packaging: Bulk SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - On State (It (AV)) (Max): 220 mA Part Status: Obsolete Voltage - Off State: 400 V |
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| 2N2329AU4 | Microsemi Corporation |
Description: SCR 400V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - On State (It (AV)) (Max): 220 mA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 400 V |
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1N5364B | Microsemi Corporation |
Description: DIODE ZENER 33V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 23.8 V |
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MSKD70-08 | Microsemi Corporation |
Description: DIODE MODULE 800V 70A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 70A Supplier Device Package: D1 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 800 V |
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MSCD70-08 | Microsemi Corporation |
Description: DIODE MODULE 800V 70A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 70A Supplier Device Package: D1 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 800 V |
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MAP5KE17CA | Microsemi Corporation |
Description: TVS DIODE 17VWM 27.6VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 18.1A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Part Status: Obsolete Qualification: MIL-PRF-19500 |
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MAP5KE45A | Microsemi Corporation |
Description: TVS DIODE 45VWM 72.7VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.9A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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MXP5KE17Ae3 | Microsemi Corporation |
Description: TVS DIODE 17VWM 27.6VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 18.1A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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APT15GN120KG | Microsemi Corporation |
Description: IGBT 1200V 45A 195W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: TO-220 [K] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 10ns/150ns Switching Energy: 410µJ (on), 950µJ (off) Test Condition: 800V, 15A, 4.3Ohm, 15V Gate Charge: 90 nC Part Status: Obsolete Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 195 W |
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MPLAD6.5KP51CA | Microsemi Corporation |
Description: TVS DIODE 51VWM 82.4VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 78.8A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.4V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Part Status: Active |
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MRF904 | Microsemi Corporation |
Description: RF TRANS NPN 15V 4GHZ TO72 Packaging: Bulk Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 6.5dB ~ 10.5dB Power - Max: 200mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): 1.5dB @ 450MHz Supplier Device Package: TO-72 Part Status: Obsolete |
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1PMT4623/TR13 | Microsemi Corporation |
Description: DIODE ZENER 4.3V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 1.65 kOhms Supplier Device Package: DO-216 Part Status: Obsolete Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 2 V |
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1PMT4623E3/TR7 | Microsemi Corporation |
Description: DIODE ZENER 4.3V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 1.65 kOhms Supplier Device Package: DO-216 Part Status: Obsolete Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 2 V |
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1PMT4623CE3/TR7 | Microsemi Corporation |
Description: DIODE ZENER 4.3V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 1.65 kOhms Supplier Device Package: DO-216 Part Status: Obsolete Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 2 V |
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| JANTXV2N2324AU4 | Microsemi Corporation |
Description: SCR 100V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 600 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 100 V |
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| JANTXV2N2324A | Microsemi Corporation |
Description: SCR 100V TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 600 mV Supplier Device Package: TO-5 Part Status: Obsolete Voltage - Off State: 100 V |
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| JAN2N2324U4 | Microsemi Corporation |
Description: SCR 100V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 100 V |
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| JANTXV2N2324U4 | Microsemi Corporation |
Description: SCR 100V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 100 V |
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| JAN2N2324AU4 | Microsemi Corporation |
Description: SCR 100V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 600 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 100 V |
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| JANTX2N2324AU4 | Microsemi Corporation |
Description: SCR 100V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 600 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 100 V |
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JANTXV2N2324S | Microsemi Corporation |
Description: SCR 100V TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Supplier Device Package: TO-39 (TO-205AD) Part Status: Obsolete Voltage - Off State: 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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JANTXV2N2324AS | Microsemi Corporation |
Description: SCR 100V TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 20 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 600 mV Supplier Device Package: TO-39 (TO-205AD) Part Status: Obsolete Voltage - Off State: 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| JANTX2N2324U4 | Microsemi Corporation |
Description: SCR 100V U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - Off State (Max): 10 µA Supplier Device Package: U4 Part Status: Obsolete Voltage - Off State: 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JANTXV2N2324 | Microsemi Corporation |
Description: SCR 100V TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -65°C ~ 125°C Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - On State (It (AV)) (Max): 220 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Supplier Device Package: TO-5 Part Status: Obsolete Voltage - Off State: 100 V |
Produkt ist nicht verfügbar |
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APT15GT60KRG | Microsemi Corporation |
Description: IGBT 600V 42A 184W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-220 [K] IGBT Type: NPT Td (on/off) @ 25°C: 6ns/105ns Switching Energy: 150µJ (on), 215µJ (off) Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 75 nC Part Status: Obsolete Current - Collector (Ic) (Max): 42 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 184 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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APT15GF120JCU2 | Microsemi Corporation |
Description: IGBT MOD 1200V 30A 156W SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis, Stud Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 156 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MSD50-08 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 800V 50A MSD Packaging: Bulk Package / Case: M1 Mounting Type: QC Terminal Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MSD Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MSD30-08 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 800V 30A MSD Packaging: Bulk Package / Case: M1 Mounting Type: QC Terminal Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MSD Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 30 A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MSD50-12 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.2KV 50A MSD Packaging: Bulk Package / Case: M1 Mounting Type: QC Terminal Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MSD Part Status: Obsolete Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MSD50-16 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.6KV 50A MSD Packaging: Bulk Package / Case: M1 Mounting Type: QC Terminal Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MSD Part Status: Obsolete Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 1600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| MSD50-18 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.8KV 50A Packaging: Bulk Package / Case: M1 Mounting Type: QC Terminal Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Part Status: Obsolete Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 1800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SK39/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 3A 90V SMCJ Packaging: Tape & Reel (TR) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SK39E3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 3A 90V SMCJ Packaging: Tape & Reel (TR) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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LX5516LLTR | Microsemi Corporation |
Description: IC AMP 802.11B/G/N 2.4GHZ 12MLPQ Packaging: Tape & Reel (TR) Package / Case: 12-XFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.4GHz ~ 2.5GHz RF Type: 802.11b/g/n Voltage - Supply: 3.3V Gain: 29dB Current - Supply: 130mA Supplier Device Package: 12-MLPQ (2x2) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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LX5516LLTR | Microsemi Corporation |
Description: IC AMP 802.11B/G/N 2.4GHZ 12MLPQ Packaging: Cut Tape (CT) Package / Case: 12-XFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.4GHz ~ 2.5GHz RF Type: 802.11b/g/n Voltage - Supply: 3.3V Gain: 29dB Current - Supply: 130mA Supplier Device Package: 12-MLPQ (2x2) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N4101 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 8.2V 400MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 6.24 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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P6KE200AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 171VWM 274VC DO15 Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 171V Supplier Device Package: T-18 Unidirectional Channels: 1 Voltage - Breakdown (Min): 190V Voltage - Clamping (Max) @ Ipp: 274V Power - Peak Pulse: 600W Power Line Protection: Yes Part Status: Active |
auf Bestellung 188 Stücke: Lieferzeit 10-14 Tag (e) |
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| PAS7401B-NGI | Microsemi Corporation |
Description: IC ETHERNET MII 384FCBGA Packaging: Tray Package / Case: 384-BGA, FCBGA Interface: MII Protocol: Ethernet Supplier Device Package: 384-FCBGA (17x17) Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| PAS7400BV-NGI | Microsemi Corporation |
Description: IC ETHERNET MII 384FCBGA Packaging: Tray Package / Case: 384-BGA, FCBGA Interface: MII Protocol: Ethernet Supplier Device Package: 384-FCBGA (17x17) Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JANTX2N6768 | Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO3 Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Grade: Military Qualification: MIL-PRF-19500/543 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JANTX2N6768T1 | Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO3 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT60DQ120LCTG |
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Hersteller: Microsemi Corporation
Description: DIODE ARRAY GP 1200V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT15GP60KG |
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Hersteller: Microsemi Corporation
Description: IGBT 600V 56A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
Description: IGBT 600V 56A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXP5KE64CAe3 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 64VWM 103VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 64VWM 103VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5362B |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 28V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.1 V
Description: DIODE ZENER 28V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT38N60SC6 |
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Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 38A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
Description: MOSFET N-CH 600V 38A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSAD100-12 |
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 100A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
Description: DIODE MODULE 1.2KV 100A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT12067B2LLG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A T-MAX
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V
Description: MOSFET N-CH 1200V 18A T-MAX
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N2329U4 |
Hersteller: Microsemi Corporation
Description: SCR 400V 200UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V 200UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX2N2329AU4 |
Hersteller: Microsemi Corporation
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX2N2329U4 |
Hersteller: Microsemi Corporation
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
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| JAN2N2329AS |
|
Hersteller: Microsemi Corporation
Description: SCR 400V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 400 V
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| JANTXV2N2329U4 |
Hersteller: Microsemi Corporation
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
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| JAN2N2329AU4 |
Hersteller: Microsemi Corporation
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
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| JAN2N2329U4 |
Hersteller: Microsemi Corporation
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
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| JANTXV2N2329AU4 |
Hersteller: Microsemi Corporation
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
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| JANTXV2N2329A |
|
Hersteller: Microsemi Corporation
Description: SCR 400V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 400 V
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| Jantxv2N2329S |
|
Hersteller: Microsemi Corporation
Description: SCR 400V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Voltage - Off State: 400 V
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| JANTXV2N2329AS |
|
Hersteller: Microsemi Corporation
Description: SCR 400V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Voltage - Off State: 400 V
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| JANTXV2N2329 |
|
Hersteller: Microsemi Corporation
Description: SCR 400V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Voltage - Off State: 400 V
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| 2N2329AS |
Hersteller: Microsemi Corporation
Description: SCR 400V
Packaging: Bulk
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - On State (It (AV)) (Max): 220 mA
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V
Packaging: Bulk
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - On State (It (AV)) (Max): 220 mA
Part Status: Obsolete
Voltage - Off State: 400 V
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Stück im Wert von UAH
| 2N2329AU4 |
Hersteller: Microsemi Corporation
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - On State (It (AV)) (Max): 220 mA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - On State (It (AV)) (Max): 220 mA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
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| 1N5364B |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 33V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 23.8 V
Description: DIODE ZENER 33V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 23.8 V
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| MSKD70-08 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 800V 70A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: D1
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Description: DIODE MODULE 800V 70A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: D1
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
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| MSCD70-08 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 800V 70A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: D1
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Description: DIODE MODULE 800V 70A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: D1
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
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| MAP5KE17CA |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 17VWM 27.6VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Description: TVS DIODE 17VWM 27.6VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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| MAP5KE45A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 45VWM 72.7VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 45VWM 72.7VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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Stück im Wert von UAH
| MXP5KE17Ae3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 17VWM 27.6VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 17VWM 27.6VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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| APT15GN120KG |
|
Hersteller: Microsemi Corporation
Description: IGBT 1200V 45A 195W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/150ns
Switching Energy: 410µJ (on), 950µJ (off)
Test Condition: 800V, 15A, 4.3Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 195 W
Description: IGBT 1200V 45A 195W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/150ns
Switching Energy: 410µJ (on), 950µJ (off)
Test Condition: 800V, 15A, 4.3Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 195 W
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| MPLAD6.5KP51CA |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 51VWM 82.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 78.8A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 51VWM 82.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 78.8A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Part Status: Active
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| MRF904 |
|
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 4GHZ TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6.5dB ~ 10.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): 1.5dB @ 450MHz
Supplier Device Package: TO-72
Part Status: Obsolete
Description: RF TRANS NPN 15V 4GHZ TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6.5dB ~ 10.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): 1.5dB @ 450MHz
Supplier Device Package: TO-72
Part Status: Obsolete
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| 1PMT4623/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 1.65 kOhms
Supplier Device Package: DO-216
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Description: DIODE ZENER 4.3V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 1.65 kOhms
Supplier Device Package: DO-216
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
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| 1PMT4623E3/TR7 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 1.65 kOhms
Supplier Device Package: DO-216
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Description: DIODE ZENER 4.3V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 1.65 kOhms
Supplier Device Package: DO-216
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
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| 1PMT4623CE3/TR7 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 1.65 kOhms
Supplier Device Package: DO-216
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
Description: DIODE ZENER 4.3V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 1.65 kOhms
Supplier Device Package: DO-216
Part Status: Obsolete
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
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| JANTXV2N2324AU4 |
Hersteller: Microsemi Corporation
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
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| JANTXV2N2324A |
|
Hersteller: Microsemi Corporation
Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
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| JAN2N2324U4 |
Hersteller: Microsemi Corporation
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
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| JANTXV2N2324U4 |
Hersteller: Microsemi Corporation
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
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| JAN2N2324AU4 |
Hersteller: Microsemi Corporation
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
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| JANTX2N2324AU4 |
Hersteller: Microsemi Corporation
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
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| JANTXV2N2324S |
|
Hersteller: Microsemi Corporation
Description: SCR 100V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Voltage - Off State: 100 V
Description: SCR 100V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Voltage - Off State: 100 V
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| JANTXV2N2324AS |
|
Hersteller: Microsemi Corporation
Description: SCR 100V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Voltage - Off State: 100 V
Description: SCR 100V TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Obsolete
Voltage - Off State: 100 V
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| JANTX2N2324U4 |
Hersteller: Microsemi Corporation
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
Description: SCR 100V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 100 V
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| JANTXV2N2324 |
|
Hersteller: Microsemi Corporation
Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
Description: SCR 100V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 100 V
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| APT15GT60KRG |
|
Hersteller: Microsemi Corporation
Description: IGBT 600V 42A 184W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: NPT
Td (on/off) @ 25°C: 6ns/105ns
Switching Energy: 150µJ (on), 215µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 184 W
Description: IGBT 600V 42A 184W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: NPT
Td (on/off) @ 25°C: 6ns/105ns
Switching Energy: 150µJ (on), 215µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 75 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 184 W
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| APT15GF120JCU2 |
Hersteller: Microsemi Corporation
Description: IGBT MOD 1200V 30A 156W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: IGBT MOD 1200V 30A 156W SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 156 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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| MSD50-08 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 50A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
Description: BRIDGE RECT 3PHASE 800V 50A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
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| MSD30-08 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 30A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
Description: BRIDGE RECT 3PHASE 800V 30A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
Produkt ist nicht verfügbar
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| MSD50-12 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 50A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: BRIDGE RECT 3PHASE 1.2KV 50A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
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| MSD50-16 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 50A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Description: BRIDGE RECT 3PHASE 1.6KV 50A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
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| MSD50-18 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 50A
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
Description: BRIDGE RECT 3PHASE 1.8KV 50A
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
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| SK39/TR13 |
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 3A 90V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DIODE SCHOTTKY 3A 90V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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| SK39E3/TR13 |
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 3A 90V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DIODE SCHOTTKY 3A 90V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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| LX5516LLTR |
|
Hersteller: Microsemi Corporation
Description: IC AMP 802.11B/G/N 2.4GHZ 12MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.5GHz
RF Type: 802.11b/g/n
Voltage - Supply: 3.3V
Gain: 29dB
Current - Supply: 130mA
Supplier Device Package: 12-MLPQ (2x2)
Part Status: Active
Description: IC AMP 802.11B/G/N 2.4GHZ 12MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.5GHz
RF Type: 802.11b/g/n
Voltage - Supply: 3.3V
Gain: 29dB
Current - Supply: 130mA
Supplier Device Package: 12-MLPQ (2x2)
Part Status: Active
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| LX5516LLTR |
|
Hersteller: Microsemi Corporation
Description: IC AMP 802.11B/G/N 2.4GHZ 12MLPQ
Packaging: Cut Tape (CT)
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.5GHz
RF Type: 802.11b/g/n
Voltage - Supply: 3.3V
Gain: 29dB
Current - Supply: 130mA
Supplier Device Package: 12-MLPQ (2x2)
Part Status: Active
Description: IC AMP 802.11B/G/N 2.4GHZ 12MLPQ
Packaging: Cut Tape (CT)
Package / Case: 12-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.5GHz
RF Type: 802.11b/g/n
Voltage - Supply: 3.3V
Gain: 29dB
Current - Supply: 130mA
Supplier Device Package: 12-MLPQ (2x2)
Part Status: Active
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| 1N4101 (DO35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 8.2V 400MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.24 V
Description: DIODE ZENER 8.2V 400MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.24 V
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| P6KE200AE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 171VWM 274VC DO15
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 171VWM 274VC DO15
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.78 EUR |
| 16+ | 1.12 EUR |
| 25+ | 0.94 EUR |
| 100+ | 0.73 EUR |
| PAS7401B-NGI |
Hersteller: Microsemi Corporation
Description: IC ETHERNET MII 384FCBGA
Packaging: Tray
Package / Case: 384-BGA, FCBGA
Interface: MII
Protocol: Ethernet
Supplier Device Package: 384-FCBGA (17x17)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC ETHERNET MII 384FCBGA
Packaging: Tray
Package / Case: 384-BGA, FCBGA
Interface: MII
Protocol: Ethernet
Supplier Device Package: 384-FCBGA (17x17)
Part Status: Active
DigiKey Programmable: Not Verified
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| PAS7400BV-NGI |
Hersteller: Microsemi Corporation
Description: IC ETHERNET MII 384FCBGA
Packaging: Tray
Package / Case: 384-BGA, FCBGA
Interface: MII
Protocol: Ethernet
Supplier Device Package: 384-FCBGA (17x17)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC ETHERNET MII 384FCBGA
Packaging: Tray
Package / Case: 384-BGA, FCBGA
Interface: MII
Protocol: Ethernet
Supplier Device Package: 384-FCBGA (17x17)
Part Status: Active
DigiKey Programmable: Not Verified
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| JANTX2N6768 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/543
Description: MOSFET N-CH 400V 14A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/543
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| JANTX2N6768T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO3
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Description: MOSFET N-CH 400V 14A TO3
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
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