Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11544) > Seite 193 nach 193
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MSAD60-12 | Microsemi Corporation |
Description: DIODE MODULE GP 1200V 60A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: D1 Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 1200 V |
Produkt ist nicht verfügbar |
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1N5379/TR8 | Microsemi Corporation |
Description: DIODE ZENER 110V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 79.2 V |
Produkt ist nicht verfügbar |
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APTM10DHM09T3G | Microsemi Corporation |
Description: MOSFET 2N-CH 100V 139A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: SP3 |
Produkt ist nicht verfügbar |
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1N4716 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 39V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 39 V Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 29.6 V |
Produkt ist nicht verfügbar |
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1N5333B | Microsemi Corporation |
Description: DIODE ZENER 3.3V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 300 µA @ 1 V |
Produkt ist nicht verfügbar |
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MXLPLAD6.5KP85Ae3 | Microsemi Corporation |
Description: TVS DIODE 85VWM 137VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 47.5A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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JANTXV2N6756 | Microsemi Corporation |
Description: MOSFET N-CH 100V 14A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Qualification: MIL-PRF-19500/542 |
Produkt ist nicht verfügbar |
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2N6756 | Microsemi Corporation |
Description: MOSFET N-CH 100V 14A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V |
Produkt ist nicht verfügbar |
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MXP5KE70CA | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.4A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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APTM20UM05SG | Microsemi Corporation |
Description: MOSFET N-CH 200V 317A MODULE Packaging: Bulk Package / Case: J3 Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 317A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V Power Dissipation (Max): 1136W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: Module Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT6040BN | Microsemi Corporation |
Description: MOSFET N-CH 600V 18A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT6040BNG | Microsemi Corporation |
Description: MOSFET N-CH 600V 18A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V |
Produkt ist nicht verfügbar |
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UC2843AD | Microsemi Corporation |
Description: IC REG CTRLR BUCK/BOOST 14SOIC Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: Up to 500kHz Topology: Boost, Buck, Flyback, Forward Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V Supplier Device Package: 14-SOIC Synchronous Rectifier: No Control Features: Frequency Control Output Phases: 1 Duty Cycle (Max): 96% Clock Sync: No Number of Outputs: 1 |
Produkt ist nicht verfügbar |
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1N5518B (DO35) | Microsemi Corporation |
Description: DIODE ZENER 3.3V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 26 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
Produkt ist nicht verfügbar |
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UC3843ADTR | Microsemi Corporation |
Description: IC REG CTRLR BUCK/BOOST 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up, Step-Down Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: Up to 500kHz Topology: Boost, Buck, Flyback, Forward Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V Supplier Device Package: 14-SOIC Synchronous Rectifier: No Control Features: Frequency Control Output Phases: 1 Duty Cycle (Max): 96% Clock Sync: No Number of Outputs: 1 |
Produkt ist nicht verfügbar |
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JANTXV1N6660CAT1 | Microsemi Corporation |
Description: DIODE ARR SCHOTT 45V 15A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-254AA Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V Qualification: MIL-PRF-19500/608 |
Produkt ist nicht verfügbar |
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1N5259A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 39V 500MW DO35 Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
Produkt ist nicht verfügbar |
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1N5259B (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 39V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
Produkt ist nicht verfügbar |
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1N5371B | Microsemi Corporation |
Description: DIODE ZENER 60V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 60 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 43 V |
Produkt ist nicht verfügbar |
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1N5371B | Microsemi Corporation |
Description: DIODE ZENER 60V 5W T18 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 60 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 43 V |
Produkt ist nicht verfügbar |
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MSD130-18 | Microsemi Corporation |
auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
MSAD60-12 |
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 1200V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
Description: DIODE MODULE GP 1200V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
Produkt ist nicht verfügbar
1N5379/TR8 |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 79.2 V
Description: DIODE ZENER 110V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 79.2 V
Produkt ist nicht verfügbar
APTM10DHM09T3G |
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
Description: MOSFET 2N-CH 100V 139A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 390W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
1N4716 (DO35) |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.6 V
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.6 V
Produkt ist nicht verfügbar
1N5333B |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.3V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
Description: DIODE ZENER 3.3V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
Produkt ist nicht verfügbar
MXLPLAD6.5KP85Ae3 |
Hersteller: Microsemi Corporation
Description: TVS DIODE 85VWM 137VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 85VWM 137VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
JANTXV2N6756 |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Qualification: MIL-PRF-19500/542
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Qualification: MIL-PRF-19500/542
Produkt ist nicht verfügbar
2N6756 |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Produkt ist nicht verfügbar
MXP5KE70CA |
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 70VWM 113VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
APTM20UM05SG |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 317A MODULE
Packaging: Bulk
Package / Case: J3 Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: Module
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
Description: MOSFET N-CH 200V 317A MODULE
Packaging: Bulk
Package / Case: J3 Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: Module
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
Produkt ist nicht verfügbar
APT6040BN |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Produkt ist nicht verfügbar
APT6040BNG |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 9A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Produkt ist nicht verfügbar
UC2843AD |
Hersteller: Microsemi Corporation
Description: IC REG CTRLR BUCK/BOOST 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR BUCK/BOOST 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
1N5518B (DO35) |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.3V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 3.3V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
UC3843ADTR |
Hersteller: Microsemi Corporation
Description: IC REG CTRLR BUCK/BOOST 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR BUCK/BOOST 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up, Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: Up to 500kHz
Topology: Boost, Buck, Flyback, Forward
Voltage - Supply (Vcc/Vdd): 7.6V ~ 30V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: No
Control Features: Frequency Control
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
JANTXV1N6660CAT1 |
Hersteller: Microsemi Corporation
Description: DIODE ARR SCHOTT 45V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-254AA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: MIL-PRF-19500/608
Description: DIODE ARR SCHOTT 45V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-254AA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: MIL-PRF-19500/608
Produkt ist nicht verfügbar
1N5259A (DO-35) |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
1N5259B (DO-35) |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar
1N5371B |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 60V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 43 V
Description: DIODE ZENER 60V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 43 V
Produkt ist nicht verfügbar
1N5371B |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 60V 5W T18
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 43 V
Description: DIODE ZENER 60V 5W T18
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 43 V
Produkt ist nicht verfügbar