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LX1664ACN Microsemi Corporation LX1664 65.pdf Description: IC REG CTRLR INTEL 2OUT 16DIP
Packaging: Bulk
Package / Case: 16-DIP
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Through Hole
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-DIP
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LX1664CN Microsemi Corporation LX1664 65.pdf Description: IC REG CTRLR INTEL 2OUT 16DIP
Packaging: Bulk
Package / Case: 16-DIP
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Through Hole
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-DIP
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JAN2N6796 JAN2N6796 Microsemi Corporation Description: MOSFET N-CH 100V 8A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/557
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JAN2N6796U Microsemi Corporation 2N6796_798_800_802U.pdf Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/557
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JANTX2N6796 JANTX2N6796 Microsemi Corporation Description: MOSFET N-CH 100V 8A TO205AF
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/557
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JANTX2N6796U Microsemi Corporation 2N6796_798_800_802U.pdf Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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JANTXV2N6796 JANTXV2N6796 Microsemi Corporation Description: MOSFET N-CH 100V 8A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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JANTXV2N6796U Microsemi Corporation 2N6796_798_800_802U.pdf Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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2N6796 2N6796 Microsemi Corporation Description: MOSFET N-CH 100V 8A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.34 nC @ 10 V
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2N6796U Microsemi Corporation 2N6796_798_800_802U.pdf Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.34 nC @ 10 V
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090-00218-001 Microsemi Corporation 090-00218-001_%7E_090-00218-006.pdf Description: XTAL OSC ATOMIC 10.0000MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 10 MHz
Base Resonator: Crystal
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090-00218-003 Microsemi Corporation 090-00218-001_%7E_090-00218-006.pdf Description: XTAL OSC ATOMIC 16.3840MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 16.384 MHz
Base Resonator: Crystal
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090-00218-006 Microsemi Corporation 090-00218-001_~_090-00218-006.pdf Description: XTAL OSC ATOMIC 5.0000MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 5 MHz
Base Resonator: Crystal
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090-02984-004 Microsemi Corporation 133305-quantum-sa-45s-csac-datasheet Description: XTAL OSC ATOMIC 10.2400MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 10.24 MHz
Base Resonator: Crystal
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090-02984-006 Microsemi Corporation 133305-quantum-sa-45s-csac-datasheet Description: XTAL OSC ATOMIC 5.0000MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 5 MHz
Base Resonator: Crystal
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JAN2N6756 Microsemi Corporation 8925-lds-0111-datasheet Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/542
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JAN2N6758 Microsemi Corporation 8925-lds-0111-datasheet Description: MOSFET N-CH 200V 9A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
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JAN2N6762 Microsemi Corporation 8925-lds-0111-datasheet Description: MOSFET N-CH 500V 4.5A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
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JAN2N6764 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 100V 38A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/543
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JAN2N6764T1 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 100V 38A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
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JAN2N6766T1 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 200V 30A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
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JAN2N6770 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 500V 12A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
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JAN2N6770T1 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/543
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JAN2N6784 JAN2N6784 Microsemi Corporation 8905-lds-0064-datasheet Description: MOSFET N-CH 200V 2.25A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
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JAN2N6784U Microsemi Corporation 125241-lds-0064-1-datasheet Description: MOSFET N-CH 200V 2.25A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
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JAN2N6798 JAN2N6798 Microsemi Corporation Description: MOSFET N-CH 200V 5.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42.07 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/557
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JAN2N6798U Microsemi Corporation 2N6796_798_800_802U.pdf Description: MOSFET N-CH 200V 5.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42.07 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/557
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JANTX2N6756 Microsemi Corporation 8925-lds-0111-datasheet Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/542
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JANTX2N6758 Microsemi Corporation 8925-lds-0111-datasheet Description: MOSFET N-CH 200V 9A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/542
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JANTX2N6762 Microsemi Corporation 8925-lds-0111-datasheet Description: MOSFET N-CH 500V 4.5A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/542
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JANTX2N6764 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 100V 38A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/543
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JANTX2N6764T1 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 100V 38A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/543
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JANTX2N6766T1 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 200V 30A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
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1N5381B 1N5381B Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
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1N5381B/TR12 1N5381B/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
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1N5381BE3/TR12 1N5381BE3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
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1N5381BE3/TR13 1N5381BE3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
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1N5381B/TR8 1N5381B/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
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1N5381BE3/TR8 1N5381BE3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
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1N5268A (DO-35) 1N5268A (DO-35) Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 82V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
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1N5268B (DO-35) 1N5268B (DO-35) Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 82V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
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MSCD60-16 MSCD60-16 Microsemi Corporation MSxD60.pdf Description: DIODE MODULE GP 1600V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
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3EZ160D/TR12 3EZ160D/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
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3EZ160D10/TR12 3EZ160D10/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
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3EZ160D10E3/TR12 3EZ160D10E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
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3EZ160D2/TR12 3EZ160D2/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
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3EZ160D2E3/TR12 3EZ160D2E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
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3EZ160D5/TR12 3EZ160D5/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
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3EZ160D5E3/TR12 3EZ160D5E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
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3EZ160DE3/TR12 3EZ160DE3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
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3EZ16D/TR12 3EZ16D/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
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3EZ16D10/TR12 3EZ16D10/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
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3EZ16D10E3/TR12 3EZ16D10E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
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3EZ16D2/TR12 3EZ16D2/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ16D2E3/TR12 3EZ16D2E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ16D5/TR12 3EZ16D5/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ16D5E3/TR12 3EZ16D5E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ16DE3/TR12 3EZ16DE3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ160D/TR8 3EZ160D/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
Produkt ist nicht verfügbar
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3EZ160D10/TR8 3EZ160D10/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
Produkt ist nicht verfügbar
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LX1664ACN LX1664 65.pdf
Hersteller: Microsemi Corporation
Description: IC REG CTRLR INTEL 2OUT 16DIP
Packaging: Bulk
Package / Case: 16-DIP
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Through Hole
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-DIP
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LX1664CN LX1664 65.pdf
Hersteller: Microsemi Corporation
Description: IC REG CTRLR INTEL 2OUT 16DIP
Packaging: Bulk
Package / Case: 16-DIP
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Through Hole
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-DIP
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JAN2N6796
JAN2N6796
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/557
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JAN2N6796U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/557
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JANTX2N6796
JANTX2N6796
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A TO205AF
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/557
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JANTX2N6796U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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JANTXV2N6796
JANTXV2N6796
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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JANTXV2N6796U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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2N6796
2N6796
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.34 nC @ 10 V
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2N6796U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.34 nC @ 10 V
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090-00218-001 090-00218-001_%7E_090-00218-006.pdf
Hersteller: Microsemi Corporation
Description: XTAL OSC ATOMIC 10.0000MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 10 MHz
Base Resonator: Crystal
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090-00218-003 090-00218-001_%7E_090-00218-006.pdf
Hersteller: Microsemi Corporation
Description: XTAL OSC ATOMIC 16.3840MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 16.384 MHz
Base Resonator: Crystal
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090-00218-006 090-00218-001_~_090-00218-006.pdf
Hersteller: Microsemi Corporation
Description: XTAL OSC ATOMIC 5.0000MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 5 MHz
Base Resonator: Crystal
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090-02984-004 133305-quantum-sa-45s-csac-datasheet
Hersteller: Microsemi Corporation
Description: XTAL OSC ATOMIC 10.2400MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 10.24 MHz
Base Resonator: Crystal
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090-02984-006 133305-quantum-sa-45s-csac-datasheet
Hersteller: Microsemi Corporation
Description: XTAL OSC ATOMIC 5.0000MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 5 MHz
Base Resonator: Crystal
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JAN2N6756 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/542
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JAN2N6758 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 9A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
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JAN2N6762 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 4.5A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
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JAN2N6764 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 38A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/543
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JAN2N6764T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 38A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
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JAN2N6766T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
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JAN2N6770 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
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JAN2N6770T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/543
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JAN2N6784 8905-lds-0064-datasheet
JAN2N6784
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 2.25A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
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JAN2N6784U 125241-lds-0064-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 2.25A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
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JAN2N6798
JAN2N6798
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 5.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42.07 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/557
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JAN2N6798U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 5.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42.07 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/557
Produkt ist nicht verfügbar
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JANTX2N6756 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/542
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JANTX2N6758 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 9A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/542
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JANTX2N6762 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 4.5A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/542
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JANTX2N6764 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 38A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/543
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JANTX2N6764T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 38A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/543
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JANTX2N6766T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
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1N5381B 1N5333B-88B.pdf
1N5381B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
Produkt ist nicht verfügbar
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1N5381B/TR12 1N5333B-88B.pdf
1N5381B/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
Produkt ist nicht verfügbar
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1N5381BE3/TR12 1N5333B-88B.pdf
1N5381BE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
Produkt ist nicht verfügbar
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1N5381BE3/TR13 1N5333B-88B.pdf
1N5381BE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
Produkt ist nicht verfügbar
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1N5381B/TR8 1N5333B-88B.pdf
1N5381B/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
Produkt ist nicht verfügbar
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1N5381BE3/TR8 1N5333B-88B.pdf
1N5381BE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 190 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 93.6 V
Produkt ist nicht verfügbar
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1N5268A (DO-35) 1N5221 - 1N5281B, e3 DO-35.pdf
1N5268A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
Produkt ist nicht verfügbar
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1N5268B (DO-35) 1N5221 - 1N5281B, e3 DO-35.pdf
1N5268B (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
Produkt ist nicht verfügbar
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MSCD60-16 MSxD60.pdf
MSCD60-16
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 1600V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
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3EZ160D/TR12 10926-sa5-67-datasheet
3EZ160D/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
Produkt ist nicht verfügbar
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3EZ160D10/TR12 10926-sa5-67-datasheet
3EZ160D10/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
Produkt ist nicht verfügbar
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3EZ160D10E3/TR12 10926-sa5-67-datasheet
3EZ160D10E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
Produkt ist nicht verfügbar
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3EZ160D2/TR12 10926-sa5-67-datasheet
3EZ160D2/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
Produkt ist nicht verfügbar
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3EZ160D2E3/TR12 10926-sa5-67-datasheet
3EZ160D2E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
Produkt ist nicht verfügbar
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3EZ160D5/TR12 10926-sa5-67-datasheet
3EZ160D5/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
Produkt ist nicht verfügbar
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3EZ160D5E3/TR12 10926-sa5-67-datasheet
3EZ160D5E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
Produkt ist nicht verfügbar
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3EZ160DE3/TR12 10926-sa5-67-datasheet
3EZ160DE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
Produkt ist nicht verfügbar
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3EZ16D/TR12 10926-sa5-67-datasheet
3EZ16D/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ16D10/TR12 10926-sa5-67-datasheet
3EZ16D10/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ16D10E3/TR12 10926-sa5-67-datasheet
3EZ16D10E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ16D2/TR12 10926-sa5-67-datasheet
3EZ16D2/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ16D2E3/TR12 10926-sa5-67-datasheet
3EZ16D2E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ16D5/TR12 10926-sa5-67-datasheet
3EZ16D5/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ16D5E3/TR12 10926-sa5-67-datasheet
3EZ16D5E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ16DE3/TR12 10926-sa5-67-datasheet
3EZ16DE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 5.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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3EZ160D/TR8 10926-sa5-67-datasheet
3EZ160D/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
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3EZ160D10/TR8 10926-sa5-67-datasheet
3EZ160D10/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 625 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 121.6 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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