Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11516) > Seite 169 nach 192
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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LXM1618-12-62 | Microsemi Corporation | Description: MOD INVERTER CCFL 6W 12V PROG |
Produkt ist nicht verfügbar |
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LXMG1617A-05-62 | Microsemi Corporation | Description: MOD INVERTER CCFL 6W 5V PROG |
Produkt ist nicht verfügbar |
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LXM1618-05-63 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 5V PROG Packaging: Bulk Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm) Mounting Type: Chassis Mount Output: 1800V Voltage - Input: 5V Type: CCFL and UV Lamps |
Produkt ist nicht verfügbar |
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LXM1617-05-62 | Microsemi Corporation | Description: MOD INVERTER CCFL 6W 5V PROG |
Produkt ist nicht verfügbar |
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LXM1617-12-61 | Microsemi Corporation | Description: MOD INVERTER CCFL 6W 12V PROG |
Produkt ist nicht verfügbar |
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LXM1611-01 | Microsemi Corporation | Description: MOD CCFL INVERTER DIGITAL DIM |
Produkt ist nicht verfügbar |
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LXM1618-05-62 | Microsemi Corporation |
Description: MOD INVERTER CCFL 6W 5V PROG Packaging: Bulk Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm) Mounting Type: Chassis Mount Output: 1800V Voltage - Input: 5V Type: CCFL and UV Lamps |
Produkt ist nicht verfügbar |
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LXMG1617-12-61 | Microsemi Corporation | Description: MOD INVERTER CCFL 6W 12V PROG |
Produkt ist nicht verfügbar |
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LXM1617-05-63 | Microsemi Corporation | Description: MOD INVERTER CCFL 6W 5V PROG |
Produkt ist nicht verfügbar |
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1N4701 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 14V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 14 V Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V |
Produkt ist nicht verfügbar |
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FST160100 | Microsemi Corporation |
Description: DIODE MODULE 100V 80A TO249 Packaging: Bulk Package / Case: TO-249AA Isolated Base Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: TO-249 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A Current - Reverse Leakage @ Vr: 2 mA @ 100 V |
Produkt ist nicht verfügbar |
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FST160100A | Microsemi Corporation |
Description: DIODE MODULE 100V TO249 Packaging: Bulk Package / Case: TO-249AA Isolated Base Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: TO-249 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A Current - Reverse Leakage @ Vr: 2 mA @ 100 V |
Produkt ist nicht verfügbar |
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FST160100D | Microsemi Corporation |
Description: DIODE MODULE 100V TO249 Packaging: Bulk Package / Case: TO-249AA Isolated Base Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 80A Supplier Device Package: TO-249 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A Current - Reverse Leakage @ Vr: 2 mA @ 100 V |
Produkt ist nicht verfügbar |
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MP5KE26CA | Microsemi Corporation |
Description: TVS DIODE 26VWM 42.1VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.9A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
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LX24232ILQ-TR | Microsemi Corporation | Description: IC LED DRIVER PWM 200MA 56QFN |
Produkt ist nicht verfügbar |
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LX24132ILQ-TR | Microsemi Corporation | Description: IC LED DRIVER PWM 200MA 56QFN |
Produkt ist nicht verfügbar |
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1N4890 | Microsemi Corporation |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.35 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-7 Power - Max: 400 mW |
Produkt ist nicht verfügbar |
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1N4890A | Microsemi Corporation |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.35 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-7 Power - Max: 400 mW |
Produkt ist nicht verfügbar |
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AGL250V2-VQG100T | Microsemi Corporation | Description: IC FPGA 68 I/O 100VQFP |
Produkt ist nicht verfügbar |
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AGL250V2-VQ100T | Microsemi Corporation | Description: IC FPGA 68 I/O 100VQFP |
Produkt ist nicht verfügbar |
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AGL250V2-FG144T | Microsemi Corporation | Description: IC FPGA 97 I/O 144FBGA |
Produkt ist nicht verfügbar |
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AGL250V2-FGG144T | Microsemi Corporation | Description: IC FPGA 97 I/O 144FBGA |
Produkt ist nicht verfügbar |
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APTDC10H601G | Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 600V 10A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Diode Type: Single Phase Technology: Silicon Carbide Schottky Supplier Device Package: SP1 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
Produkt ist nicht verfügbar |
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APTDC20H601G | Microsemi Corporation | Description: BRIDGE RECT 1PHASE 600V 20A SP1 |
Produkt ist nicht verfügbar |
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1N4099 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 6.8V 400MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.17 V |
Produkt ist nicht verfügbar |
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JANTX2N3811 | Microsemi Corporation | Description: TRANS 2PNP 60V 0.05A TO78 |
Produkt ist nicht verfügbar |
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JANTXV2N3811U | Microsemi Corporation | Description: TRANS 2PNP 60V 0.05A |
Produkt ist nicht verfügbar |
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JAN2N3811L | Microsemi Corporation |
Description: TRANS 2PNP 60V 0.05A TO78 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/336 |
Produkt ist nicht verfügbar |
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2N3811L | Microsemi Corporation | Description: TRANS 2PNP 60V 0.05A TO-78 |
Produkt ist nicht verfügbar |
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JANTXV2N3811 | Microsemi Corporation | Description: TRANS 2PNP 60V 0.05A TO78 |
Produkt ist nicht verfügbar |
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LIB-INCR-F-SOL | Microsemi Corporation | Description: LICENSE IP SOLARIS INCREMENT 1YR |
Produkt ist nicht verfügbar |
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LIB-SOL-F-1YR | Microsemi Corporation | Description: LICENSE FULL PLATINUM 1YR FLOAT |
Produkt ist nicht verfügbar |
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LIB-SOL-F-R-1YR | Microsemi Corporation | Description: RENEWAL LIC FULL PLAT 1YR FLOAT |
Produkt ist nicht verfügbar |
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P6KE11CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 9.4VWM 15.6VC AXIAL Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 9.4V Supplier Device Package: Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 10.5V Voltage - Clamping (Max) @ Ipp: 15.6V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
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APT12F60K | Microsemi Corporation | Description: MOSFET N-CH 600V 12A TO220 |
Produkt ist nicht verfügbar |
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MSD30-12 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD Packaging: Bulk Package / Case: M1 Mounting Type: QC Terminal Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MSD Part Status: Obsolete Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 30 A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
Produkt ist nicht verfügbar |
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MSD30-18 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.8KV 30A Packaging: Bulk Package / Case: M1 Mounting Type: QC Terminal Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Part Status: Obsolete Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 30 A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 1800 V |
Produkt ist nicht verfügbar |
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APTGF50H120TG | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 312W SP4 |
Produkt ist nicht verfügbar |
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APTGF50DU120TG | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGF50DA120T1G | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 312W SP1 |
Produkt ist nicht verfügbar |
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APTGF50A120TG | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 312W SP4 |
Produkt ist nicht verfügbar |
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APTGF50TDU120PG | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGF50DDA120T3G | Microsemi Corporation |
Description: IGBT MODULE 1200V 70A 312W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Boost Chopper Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGF50TA120PG | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: NPT Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTGF50SK120T1G | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 312W SP1 |
Produkt ist nicht verfügbar |
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APTGF50DA120CT1G | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 312W SP1 |
Produkt ist nicht verfügbar |
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MXLPLAD6.5KP54A | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MAPLAD6.5KP54Ae3 | Microsemi Corporation | Description: TVS DIODE 54VWM 87.1VC MINI-PLAD |
Produkt ist nicht verfügbar |
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MXPLAD6.5KP54A | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MXPLAD6.5KP54Ae3 | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MAPLAD6.5KP54A | Microsemi Corporation | Description: TVS DIODE 54VWM 87.1VC MINI-PLAD |
Produkt ist nicht verfügbar |
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MPLAD6.5KP54A | Microsemi Corporation | Description: TVS DIODE 54VWM 87.1VC PLAD |
Produkt ist nicht verfügbar |
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MPLAD7.5KP54AE3 | Microsemi Corporation | Description: TVS DIODE |
Produkt ist nicht verfügbar |
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MXLPLAD7.5KP54A | Microsemi Corporation | Description: TVS DIODE |
Produkt ist nicht verfügbar |
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MAPLAD7.5KP54AE3 | Microsemi Corporation | Description: TVS DIODE |
Produkt ist nicht verfügbar |
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MPLAD7.5KP54A | Microsemi Corporation | Description: TVS DIODE |
Produkt ist nicht verfügbar |
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MAPLAD7.5KP54A | Microsemi Corporation | Description: TVS DIODE |
Produkt ist nicht verfügbar |
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MXLPLAD6.5KP54Ae3 | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MXLPLAD7.5KP54AE3 | Microsemi Corporation | Description: TVS DIODE |
Produkt ist nicht verfügbar |
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BR246D-320G3-28V-027L | Microsemi Corporation | Description: RELAY GEN PURPOSE DPDT 10A 28V |
Produkt ist nicht verfügbar |
LXM1618-12-62 |
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 12V PROG
Description: MOD INVERTER CCFL 6W 12V PROG
Produkt ist nicht verfügbar
LXMG1617A-05-62 |
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Description: MOD INVERTER CCFL 6W 5V PROG
Produkt ist nicht verfügbar
LXM1618-05-63 |
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
Produkt ist nicht verfügbar
LXM1617-05-62 |
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Description: MOD INVERTER CCFL 6W 5V PROG
Produkt ist nicht verfügbar
LXM1617-12-61 |
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 12V PROG
Description: MOD INVERTER CCFL 6W 12V PROG
Produkt ist nicht verfügbar
LXM1611-01 |
Hersteller: Microsemi Corporation
Description: MOD CCFL INVERTER DIGITAL DIM
Description: MOD CCFL INVERTER DIGITAL DIM
Produkt ist nicht verfügbar
LXM1618-05-62 |
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
Description: MOD INVERTER CCFL 6W 5V PROG
Packaging: Bulk
Size / Dimension: 3.94" L x 0.63" W x 0.30" H (100mm x 16mm x 7.5mm)
Mounting Type: Chassis Mount
Output: 1800V
Voltage - Input: 5V
Type: CCFL and UV Lamps
Produkt ist nicht verfügbar
LXMG1617-12-61 |
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 12V PROG
Description: MOD INVERTER CCFL 6W 12V PROG
Produkt ist nicht verfügbar
LXM1617-05-63 |
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
Description: MOD INVERTER CCFL 6W 5V PROG
Produkt ist nicht verfügbar
1N4701 (DO35) |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 14V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
Description: DIODE ZENER 14V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
Produkt ist nicht verfügbar
FST160100 |
Hersteller: Microsemi Corporation
Description: DIODE MODULE 100V 80A TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Description: DIODE MODULE 100V 80A TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Produkt ist nicht verfügbar
FST160100A |
Hersteller: Microsemi Corporation
Description: DIODE MODULE 100V TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Description: DIODE MODULE 100V TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Produkt ist nicht verfügbar
FST160100D |
Hersteller: Microsemi Corporation
Description: DIODE MODULE 100V TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Description: DIODE MODULE 100V TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Produkt ist nicht verfügbar
MP5KE26CA |
Hersteller: Microsemi Corporation
Description: TVS DIODE 26VWM 42.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 26VWM 42.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
LX24232ILQ-TR |
Hersteller: Microsemi Corporation
Description: IC LED DRIVER PWM 200MA 56QFN
Description: IC LED DRIVER PWM 200MA 56QFN
Produkt ist nicht verfügbar
LX24132ILQ-TR |
Hersteller: Microsemi Corporation
Description: IC LED DRIVER PWM 200MA 56QFN
Description: IC LED DRIVER PWM 200MA 56QFN
Produkt ist nicht verfügbar
1N4890 |
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
1N4890A |
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
AGL250V2-VQG100T |
Hersteller: Microsemi Corporation
Description: IC FPGA 68 I/O 100VQFP
Description: IC FPGA 68 I/O 100VQFP
Produkt ist nicht verfügbar
AGL250V2-VQ100T |
Hersteller: Microsemi Corporation
Description: IC FPGA 68 I/O 100VQFP
Description: IC FPGA 68 I/O 100VQFP
Produkt ist nicht verfügbar
AGL250V2-FG144T |
Hersteller: Microsemi Corporation
Description: IC FPGA 97 I/O 144FBGA
Description: IC FPGA 97 I/O 144FBGA
Produkt ist nicht verfügbar
AGL250V2-FGG144T |
Hersteller: Microsemi Corporation
Description: IC FPGA 97 I/O 144FBGA
Description: IC FPGA 97 I/O 144FBGA
Produkt ist nicht verfügbar
APTDC10H601G |
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 10A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 10A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
APTDC20H601G |
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 20A SP1
Description: BRIDGE RECT 1PHASE 600V 20A SP1
Produkt ist nicht verfügbar
1N4099 (DO35) |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.8V 400MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.17 V
Description: DIODE ZENER 6.8V 400MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.17 V
Produkt ist nicht verfügbar
JANTX2N3811 |
Hersteller: Microsemi Corporation
Description: TRANS 2PNP 60V 0.05A TO78
Description: TRANS 2PNP 60V 0.05A TO78
Produkt ist nicht verfügbar
JANTXV2N3811U |
Hersteller: Microsemi Corporation
Description: TRANS 2PNP 60V 0.05A
Description: TRANS 2PNP 60V 0.05A
Produkt ist nicht verfügbar
JAN2N3811L |
Hersteller: Microsemi Corporation
Description: TRANS 2PNP 60V 0.05A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
Description: TRANS 2PNP 60V 0.05A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
Produkt ist nicht verfügbar
2N3811L |
Hersteller: Microsemi Corporation
Description: TRANS 2PNP 60V 0.05A TO-78
Description: TRANS 2PNP 60V 0.05A TO-78
Produkt ist nicht verfügbar
JANTXV2N3811 |
Hersteller: Microsemi Corporation
Description: TRANS 2PNP 60V 0.05A TO78
Description: TRANS 2PNP 60V 0.05A TO78
Produkt ist nicht verfügbar
LIB-INCR-F-SOL |
Hersteller: Microsemi Corporation
Description: LICENSE IP SOLARIS INCREMENT 1YR
Description: LICENSE IP SOLARIS INCREMENT 1YR
Produkt ist nicht verfügbar
LIB-SOL-F-1YR |
Hersteller: Microsemi Corporation
Description: LICENSE FULL PLATINUM 1YR FLOAT
Description: LICENSE FULL PLATINUM 1YR FLOAT
Produkt ist nicht verfügbar
LIB-SOL-F-R-1YR |
Hersteller: Microsemi Corporation
Description: RENEWAL LIC FULL PLAT 1YR FLOAT
Description: RENEWAL LIC FULL PLAT 1YR FLOAT
Produkt ist nicht verfügbar
P6KE11CAE3/TR13 |
Hersteller: Microsemi Corporation
Description: TVS DIODE 9.4VWM 15.6VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 9.4VWM 15.6VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
APT12F60K |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 12A TO220
Description: MOSFET N-CH 600V 12A TO220
Produkt ist nicht verfügbar
MSD30-12 |
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Produkt ist nicht verfügbar
MSD30-18 |
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 30A
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
Description: BRIDGE RECT 3PHASE 1.8KV 30A
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
Produkt ist nicht verfügbar
APTGF50H120TG |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Description: IGBT MODULE 1200V 75A 312W SP4
Produkt ist nicht verfügbar
APTGF50DU120TG |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Produkt ist nicht verfügbar
APTGF50DA120T1G |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP1
Description: IGBT MODULE 1200V 75A 312W SP1
Produkt ist nicht verfügbar
APTGF50A120TG |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Description: IGBT MODULE 1200V 75A 312W SP4
Produkt ist nicht verfügbar
APTGF50TDU120PG |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Produkt ist nicht verfügbar
APTGF50DDA120T3G |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 70A 312W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 70A 312W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Produkt ist nicht verfügbar
APTGF50TA120PG |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Produkt ist nicht verfügbar
APTGF50SK120T1G |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP1
Description: IGBT MODULE 1200V 75A 312W SP1
Produkt ist nicht verfügbar
APTGF50DA120CT1G |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP1
Description: IGBT MODULE 1200V 75A 312W SP1
Produkt ist nicht verfügbar
MXLPLAD6.5KP54A |
Hersteller: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
MAPLAD6.5KP54Ae3 |
Hersteller: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
Produkt ist nicht verfügbar
MXPLAD6.5KP54A |
Hersteller: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
MXPLAD6.5KP54Ae3 |
Hersteller: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
MAPLAD6.5KP54A |
Hersteller: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
Produkt ist nicht verfügbar
MPLAD6.5KP54A |
Hersteller: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Description: TVS DIODE 54VWM 87.1VC PLAD
Produkt ist nicht verfügbar
MAPLAD7.5KP54AE3 |
Hersteller: Microsemi Corporation
Description: TVS DIODE
Description: TVS DIODE
Produkt ist nicht verfügbar
MXLPLAD6.5KP54Ae3 |
Hersteller: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
MXLPLAD7.5KP54AE3 |
Hersteller: Microsemi Corporation
Description: TVS DIODE
Description: TVS DIODE
Produkt ist nicht verfügbar
BR246D-320G3-28V-027L |
Hersteller: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Description: RELAY GEN PURPOSE DPDT 10A 28V
Produkt ist nicht verfügbar