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MAP5KE28CA MAP5KE28CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
MAP5KE28A MAP5KE28A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
MAP5KE48A MAP5KE48A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 48VWM 77.4VC DO204AL
Produkt ist nicht verfügbar
1N5223A (DO-35)TR 1N5223A (DO-35)TR Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Bag
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
1N5223B (DO-35) 1N5223B (DO-35) Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
APT30SCD65B Microsemi Corporation Description: DIODE SIL CARBIDE 650V 46A TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 945pF @ 1V, 1MHz
Current - Average Rectified (Io): 46A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 600 µA @ 650 V
Produkt ist nicht verfügbar
MDS400 Microsemi Corporation 9482-mds400-datasheet Description: RF TRANS NPN 55V 1.09GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6.5dB
Power - Max: 1450W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55KT
Part Status: Obsolete
Produkt ist nicht verfügbar
TAN300 Microsemi Corporation 11249-tan300-datasheet Description: RF TRANS NPN 65V 1.215GHZ 55KT
Produkt ist nicht verfügbar
TPR700 Microsemi Corporation 11280-tpr700reva-datasheet Description: RF TRANS NPN 65V 1.09GHZ 55KT
Produkt ist nicht verfügbar
DME500 Microsemi Corporation 8602-dme500-datasheet Description: RF TRANS NPN 55V 1.15GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB ~ 6.5dB
Power - Max: 1700W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: 55KT
Part Status: Obsolete
Produkt ist nicht verfügbar
1214-110M Microsemi Corporation 5710-1214-110m-rev1-2-datasheet Description: RF TRANS NPN 75V 1.4GHZ 55KT
Produkt ist nicht verfügbar
1N4116 (DO35) 1N4116 (DO35) Microsemi Corporation 129734-lds-0245-2-datasheet Description: DIODE ZENER 24V 400MW DO35
Produkt ist nicht verfügbar
ZL30347GGG ZL30347GGG Microsemi Corporation 127145-zl30347-datasheet-jun12 Description: IC PLL IEEE SYNCH 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 622.08MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH
Ratio - Input:Output: 1:13
Differential - Input:Output: No/Yes
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
ZL30321GGG ZL30321GGG Microsemi Corporation 127142-zl30321-shortform-datasheet-jul09 Description: IC NETWORK SYNCHRONIZE 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH/PDH, Telecom
Ratio - Input:Output: 11:9
Differential - Input:Output: No/No
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MSDM75-16 MSDM75-16 Microsemi Corporation MSDM75.pdf Description: BRIDGE RECT 3P 1.6KV 75A M2-1
Produkt ist nicht verfügbar
MS2212 Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=9630 Description: RF TRANS NPN 55V 1.215GHZ M222
Produkt ist nicht verfügbar
WIN867W6NHEI-350A1 Microsemi Corporation Description: WINPATH2 867W6 PROC 350MHZ LF
Packaging: Tray
Interface: Ethernet, PCI, SPI, USB
Applications: Network Processor
Core Processor: MIPS32® 24Kc™
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
2C2329 Microsemi Corporation Description: SCR SILICON CTRL RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
SMBJ5378B/TR13 SMBJ5378B/TR13 Microsemi Corporation 124875-lds-0246-2-datasheet Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
Produkt ist nicht verfügbar
SMBJ5378BE3/TR13 SMBJ5378BE3/TR13 Microsemi Corporation 124875-lds-0246-2-datasheet Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
Produkt ist nicht verfügbar
MSD100-08 MSD100-08 Microsemi Corporation 10532-msd100-rev1-datasheet Description: BRIDGE RECT 3PHASE 800V 100A M3
Packaging: Bulk
Package / Case: SM3-20H
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
Produkt ist nicht verfügbar
A3PE3000-FG324 Microsemi Corporation 130701-ds0098-proasic3e-flash-family-fpgas-datasheet Description: IC FPGA 221 I/O 324FBGA
Packaging: Tray
Package / Case: 324-BGA
Mounting Type: Surface Mount
Number of Gates: 3000000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 324-FBGA (19x19)
Total RAM Bits: 516096
Part Status: Active
Number of I/O: 221
Produkt ist nicht verfügbar
2EZ5.1D2E3/TR8 2EZ5.1D2E3/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D10E3/TR8 2EZ5.1D10E3/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D2/TR12 3EZ5.1D2/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D/TR8 2EZ5.1D/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D10E3/TR8 3EZ5.1D10E3/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1DE3/TR12 2EZ5.1DE3/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D2E3/TR8 3EZ5.1D2E3/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D10/TR12 3EZ5.1D10/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D10/TR8 3EZ5.1D10/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D10/TR8 2EZ5.1D10/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D2E3/TR12 3EZ5.1D2E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D10E3/TR12 3EZ5.1D10E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D2/TR8 3EZ5.1D2/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D/TR8 3EZ5.1D/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D10E3/TR12 2EZ5.1D10E3/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D2/TR8 2EZ5.1D2/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D10/TR12 2EZ5.1D10/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D/TR12 3EZ5.1D/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D2/TR12 2EZ5.1D2/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D2E3/TR12 2EZ5.1D2E3/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
1N5921BG 1N5921BG Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 6.8V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
Produkt ist nicht verfügbar
PD-IM-7301 Microsemi Corporation 10667-pd64001-pdf Description: POE EVB
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD64001, PD64001H
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
1N4686 (DO35) 1N4686 (DO35) Microsemi Corporation 125997-lds-0240-datasheet Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
APTGF15H120T3G Microsemi Corporation APTGF15H120T3G.pdf Description: IGBT MODULE 1200V 25A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Produkt ist nicht verfügbar
APTGF15A120T1G Microsemi Corporation APTGF15A120T1G.pdf Description: IGBT MODULE 1200V 25A 140W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Produkt ist nicht verfügbar
APTGF15H120T1G Microsemi Corporation APTGF15H120T1G.pdf Description: IGBT MODULE 1200V 25A 140W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Produkt ist nicht verfügbar
APTGF150A120T3WG APTGF150A120T3WG Microsemi Corporation APTGF150A120T3WG.pdf Description: IGBT MODULE 1200V 210A 961W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Produkt ist nicht verfügbar
1N6303Ae3/TR13 Microsemi Corporation DS_278_1.5KE Series.pdf Description: TVS DIODE 171VWM 274VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
1N6303e3/TR13 Microsemi Corporation DS_278_1.5KE Series.pdf Description: TVS DIODE 162VWM 287VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
APT60DQ120LCTG APT60DQ120LCTG Microsemi Corporation APT60DQ120LCT(G).pdf Description: DIODE ARRAY GP 1200V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
APT15GP60KG APT15GP60KG Microsemi Corporation APT15GP60K.pdf Description: IGBT 600V 56A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
Produkt ist nicht verfügbar
MXP5KE64CAe3 MXP5KE64CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 64VWM 103VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
1N5362B 1N5362B Microsemi Corporation 1N5333B-88B.pdf Description: ZENER DO201 28V 5W 5%
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.1 V
Produkt ist nicht verfügbar
APT38N60SC6 APT38N60SC6 Microsemi Corporation 122682-apt38n60bc6-apt38n60sc6-datasheet Description: MOSFET N-CH 600V 38A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
Produkt ist nicht verfügbar
MSAD100-12 Microsemi Corporation Description: DIODE MODULE 1.2KV 100A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
Produkt ist nicht verfügbar
APT12067B2LLG APT12067B2LLG Microsemi Corporation 6611-apt12057b2llg-apt12057lllg-datasheet Description: MOSFET N-CH 1200V 18A T-MAX
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V
Produkt ist nicht verfügbar
2N2329U4 Microsemi Corporation Description: SCR 400V 200UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Produkt ist nicht verfügbar
JANTX2N2329AU4 Microsemi Corporation Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Produkt ist nicht verfügbar
MAP5KE28CA 11043-p5ke-datasheet
MAP5KE28CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
MAP5KE28A 11043-p5ke-datasheet
MAP5KE28A
Hersteller: Microsemi Corporation
Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
MAP5KE48A 11043-p5ke-datasheet
MAP5KE48A
Hersteller: Microsemi Corporation
Description: TVS DIODE 48VWM 77.4VC DO204AL
Produkt ist nicht verfügbar
1N5223A (DO-35)TR 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5223A (DO-35)TR
Hersteller: Microsemi Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Bag
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
1N5223B (DO-35) 1N5221 - 1N5281B, e3 DO-35.pdf
1N5223B (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Produkt ist nicht verfügbar
APT30SCD65B
Hersteller: Microsemi Corporation
Description: DIODE SIL CARBIDE 650V 46A TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 945pF @ 1V, 1MHz
Current - Average Rectified (Io): 46A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 600 µA @ 650 V
Produkt ist nicht verfügbar
MDS400 9482-mds400-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 55V 1.09GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6.5dB
Power - Max: 1450W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55KT
Part Status: Obsolete
Produkt ist nicht verfügbar
TAN300 11249-tan300-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.215GHZ 55KT
Produkt ist nicht verfügbar
TPR700 11280-tpr700reva-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55KT
Produkt ist nicht verfügbar
DME500 8602-dme500-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 55V 1.15GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB ~ 6.5dB
Power - Max: 1700W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: 55KT
Part Status: Obsolete
Produkt ist nicht verfügbar
1214-110M 5710-1214-110m-rev1-2-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 75V 1.4GHZ 55KT
Produkt ist nicht verfügbar
1N4116 (DO35) 129734-lds-0245-2-datasheet
1N4116 (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 400MW DO35
Produkt ist nicht verfügbar
ZL30347GGG 127145-zl30347-datasheet-jun12
ZL30347GGG
Hersteller: Microsemi Corporation
Description: IC PLL IEEE SYNCH 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 622.08MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH
Ratio - Input:Output: 1:13
Differential - Input:Output: No/Yes
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
ZL30321GGG 127142-zl30321-shortform-datasheet-jul09
ZL30321GGG
Hersteller: Microsemi Corporation
Description: IC NETWORK SYNCHRONIZE 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH/PDH, Telecom
Ratio - Input:Output: 11:9
Differential - Input:Output: No/No
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MSDM75-16 MSDM75.pdf
MSDM75-16
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3P 1.6KV 75A M2-1
Produkt ist nicht verfügbar
MS2212 index.php?option=com_docman&task=doc_download&gid=9630
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 55V 1.215GHZ M222
Produkt ist nicht verfügbar
WIN867W6NHEI-350A1
Hersteller: Microsemi Corporation
Description: WINPATH2 867W6 PROC 350MHZ LF
Packaging: Tray
Interface: Ethernet, PCI, SPI, USB
Applications: Network Processor
Core Processor: MIPS32® 24Kc™
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
2C2329
Hersteller: Microsemi Corporation
Description: SCR SILICON CTRL RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
SMBJ5378B/TR13 124875-lds-0246-2-datasheet
SMBJ5378B/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
Produkt ist nicht verfügbar
SMBJ5378BE3/TR13 124875-lds-0246-2-datasheet
SMBJ5378BE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
Produkt ist nicht verfügbar
MSD100-08 10532-msd100-rev1-datasheet
MSD100-08
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 100A M3
Packaging: Bulk
Package / Case: SM3-20H
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
Produkt ist nicht verfügbar
A3PE3000-FG324 130701-ds0098-proasic3e-flash-family-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 221 I/O 324FBGA
Packaging: Tray
Package / Case: 324-BGA
Mounting Type: Surface Mount
Number of Gates: 3000000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 324-FBGA (19x19)
Total RAM Bits: 516096
Part Status: Active
Number of I/O: 221
Produkt ist nicht verfügbar
2EZ5.1D2E3/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ5.1D2E3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D10E3/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ5.1D10E3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D2/TR12 10926-sa5-67-datasheet
3EZ5.1D2/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ5.1D/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D10E3/TR8 10926-sa5-67-datasheet
3EZ5.1D10E3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1DE3/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ5.1DE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D2E3/TR8 10926-sa5-67-datasheet
3EZ5.1D2E3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D10/TR12 10926-sa5-67-datasheet
3EZ5.1D10/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D10/TR8 10926-sa5-67-datasheet
3EZ5.1D10/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D10/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ5.1D10/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D2E3/TR12 10926-sa5-67-datasheet
3EZ5.1D2E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D10E3/TR12 10926-sa5-67-datasheet
3EZ5.1D10E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D2/TR8 10926-sa5-67-datasheet
3EZ5.1D2/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D/TR8 10926-sa5-67-datasheet
3EZ5.1D/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D10E3/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ5.1D10E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D2/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ5.1D2/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D10/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ5.1D10/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
3EZ5.1D/TR12 10926-sa5-67-datasheet
3EZ5.1D/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D2/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ5.1D2/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
2EZ5.1D2E3/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ5.1D2E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
1N5921BG 10922-sa5-57-datasheet
1N5921BG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.8V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
Produkt ist nicht verfügbar
PD-IM-7301 10667-pd64001-pdf
Hersteller: Microsemi Corporation
Description: POE EVB
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD64001, PD64001H
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
1N4686 (DO35) 125997-lds-0240-datasheet
1N4686 (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
APTGF15H120T3G APTGF15H120T3G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 25A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Produkt ist nicht verfügbar
APTGF15A120T1G APTGF15A120T1G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 25A 140W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Produkt ist nicht verfügbar
APTGF15H120T1G APTGF15H120T1G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 25A 140W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Produkt ist nicht verfügbar
APTGF150A120T3WG APTGF150A120T3WG.pdf
APTGF150A120T3WG
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 210A 961W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Produkt ist nicht verfügbar
1N6303Ae3/TR13 DS_278_1.5KE Series.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 171VWM 274VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
1N6303e3/TR13 DS_278_1.5KE Series.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 162VWM 287VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
APT60DQ120LCTG APT60DQ120LCT(G).pdf
APT60DQ120LCTG
Hersteller: Microsemi Corporation
Description: DIODE ARRAY GP 1200V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
APT15GP60KG APT15GP60K.pdf
APT15GP60KG
Hersteller: Microsemi Corporation
Description: IGBT 600V 56A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
Produkt ist nicht verfügbar
MXP5KE64CAe3 11043-p5ke-datasheet
MXP5KE64CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 64VWM 103VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
1N5362B 1N5333B-88B.pdf
1N5362B
Hersteller: Microsemi Corporation
Description: ZENER DO201 28V 5W 5%
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.1 V
Produkt ist nicht verfügbar
APT38N60SC6 122682-apt38n60bc6-apt38n60sc6-datasheet
APT38N60SC6
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 38A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
Produkt ist nicht verfügbar
MSAD100-12
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 100A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 1200 V
Produkt ist nicht verfügbar
APT12067B2LLG 6611-apt12057b2llg-apt12057lllg-datasheet
APT12067B2LLG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A T-MAX
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V
Produkt ist nicht verfügbar
2N2329U4
Hersteller: Microsemi Corporation
Description: SCR 400V 200UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Produkt ist nicht verfügbar
JANTX2N2329AU4
Hersteller: Microsemi Corporation
Description: SCR 400V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 400 V
Produkt ist nicht verfügbar
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