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2EZ16D2/TR12 2EZ16D2/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
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2EZ16D2E3/TR12 2EZ16D2E3/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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2EZ16D5/TR12 2EZ16D5/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
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2EZ16D5E3/TR12 2EZ16D5E3/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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2EZ16DE3/TR12 2EZ16DE3/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
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2EZ16D/TR8 2EZ16D/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
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2EZ16D10/TR8 2EZ16D10/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
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1N5374Ae3/TR13 1N5374Ae3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374A/TR8 1N5374A/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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1N5374Ae3/TR8 1N5374Ae3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
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JANTX1N4461CUS JANTX1N4461CUS Microsemi Corporation 124793-lds-0183-1-datasheet Description: DIODE ZENER 6.8V 1.5W D5A
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4.08 V
Qualification: MIL-PRF-19500/406
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SMCG5656/TR13 Microsemi Corporation SMC(G,J)5629-5665A,e3.pdf Description: TVS DIODE 73.7VWM 131VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 73.7V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 81.9V
Voltage - Clamping (Max) @ Ipp: 131V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCG5656E3/TR13 Microsemi Corporation SMC(G,J)5629-5665A,e3.pdf Description: TVS DIODE 73.7VWM 131VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 73.7V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 81.9V
Voltage - Clamping (Max) @ Ipp: 131V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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JANTX1N4980CUS JANTX1N4980CUS Microsemi Corporation 11059-sd44a-datasheet Description: DIODE ZENER 82V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/435
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JANTX1N4980DUS JANTX1N4980DUS Microsemi Corporation 11059-sd44a-datasheet Description: DIODE ZENER 82V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/435
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SK14E3/TR13 SK14E3/TR13 Microsemi Corporation SK12%20thru%20SK110.pdf Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMBJ)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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MSCD200-12 MSCD200-12 Microsemi Corporation MSxD200.pdf Description: DIODE MODULE GP 1200V 200A SD2
Packaging: Bulk
Package / Case: D2
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: SD2
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
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JANTXV2N3735 JANTXV2N3735 Microsemi Corporation 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-39
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/395
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689-4D, 4N, 4P Microsemi Corporation 11557-wt3-27-datasheet Description: DIODE MODULE GP 400V 15A ND
Packaging: Bulk
Package / Case: Nd
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: Nd
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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JANTX1N4962CUS JANTX1N4962CUS Microsemi Corporation 11059-sd44a-datasheet Description: DIODE ZENER 15V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: MIL-PRF-19500/435
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JANTX2N6770 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 500V 12A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
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JANTXV2N6770 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 500V 12A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
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JANTXV2N6770T1 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
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2N6770 2N6770 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 500V 12A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
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2N6770T1 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
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1N6302Ae3/TR13 Microsemi Corporation DS_278_1.5KE Series.pdf Description: TVS DIODE 154VWM 246VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1N4698 (DO35) 1N4698 (DO35) Microsemi Corporation 125997-lds-0240-datasheet Description: DIODE ZENER 11V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V
Produkt ist nicht verfügbar
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ARF448BG ARF448BG Microsemi Corporation ARF448A,B.pdf Description: RF MOSFET 150V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 15A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 140W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Voltage - Rated: 450 V
Voltage - Test: 150 V
Produkt ist nicht verfügbar
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ARF448AG ARF448AG Microsemi Corporation ARF448A,B.pdf Description: RF MOSFET 150V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 15A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 230W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Voltage - Rated: 450 V
Voltage - Test: 150 V
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VJ447M VJ447M Microsemi Corporation Description: BRIDGE RECT 1PHASE 900V 10A
Packaging: Bulk
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Avalanche
Voltage - Peak Reverse (Max): 900 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 900 V
Produkt ist nicht verfügbar
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PD69104BILQ-TR PD69104BILQ-TR Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=131919 Description: IC POE CNTRL 4 CHANNEL 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD)
Operating Temperature: -10°C ~ 85°C
Voltage - Supply: 44V ~ 57V
Current - Supply: 10mA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE)
Supplier Device Package: 48-QFN (8x8)
Auxiliary Sense: No
Number of Channels: 4
Power - Max: 25.5 W
Produkt ist nicht verfügbar
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MDS800 Microsemi Corporation 9490-mds800revb-datasheet Description: RF TRANS NPN 65V 1.09GHZ 55ST-1
Packaging: Bulk
Package / Case: 55ST-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8.6dB
Power - Max: 1458W
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55ST-1
Produkt ist nicht verfügbar
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MXLPLAD6.5KP70CA MXLPLAD6.5KP70CA Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP70CAe3 MXLPLAD6.5KP70CAe3 Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP70CA MXPLAD6.5KP70CA Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP70CAe3 MXPLAD6.5KP70CAe3 Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD6.5KP70CA Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 70VWM 113VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD6.5KP70CAe3 Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 70VWM 113VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD6.5KP70CA MPLAD6.5KP70CA Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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MPLAD6.5KP70CAe3 MPLAD6.5KP70CAe3 Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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MSKD100-08 MSKD100-08 Microsemi Corporation MSKD_SCHEM.jpg Description: DIODE MODULE GP 800V 100A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Produkt ist nicht verfügbar
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APT44GA60BD30C APT44GA60BD30C Microsemi Corporation APT44GA60xD30C.pdf Description: IGBT 600V 78A 337W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/102ns
Switching Energy: 409µJ (on), 450µJ (off)
Test Condition: 400V, 26A, 4.7Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 337 W
Produkt ist nicht verfügbar
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APT8024B2LLG APT8024B2LLG Microsemi Corporation 7276-apt8024b2-lfll-c-pdf Description: MOSFET N-CH 800V 31A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+43.47 EUR
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APT130SM70B APT130SM70B Microsemi Corporation APT130SM70B.pdf Description: SICFET N-CH 700V 110A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V
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1N4891 1N4891 Microsemi Corporation 10939-sa6-27-datasheet Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4891A Microsemi Corporation 10939-sa6-27-datasheet Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
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1N4892 1N4892 Microsemi Corporation 10939-sa6-27-datasheet Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
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1N4892A Microsemi Corporation 10939-sa6-27-datasheet Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4893 1N4893 Microsemi Corporation 10939-sa6-27-datasheet Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
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1N4893A 1N4893A Microsemi Corporation 10939-sa6-27-datasheet Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
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1N4894 1N4894 Microsemi Corporation 10939-sa6-27-datasheet Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
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1N4894A Microsemi Corporation 10939-sa6-27-datasheet Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
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1N4895 1N4895 Microsemi Corporation 10939-sa6-27-datasheet Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
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1N4895A Microsemi Corporation 10939-sa6-27-datasheet Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
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3EZ120D/TR12 3EZ120D/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
Produkt ist nicht verfügbar
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3EZ120D10/TR12 3EZ120D10/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
Produkt ist nicht verfügbar
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3EZ120D10E3/TR12 3EZ120D10E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
Produkt ist nicht verfügbar
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3EZ120D2/TR12 3EZ120D2/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
Produkt ist nicht verfügbar
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3EZ120D2E3/TR12 3EZ120D2E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
Produkt ist nicht verfügbar
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3EZ120D5/TR12 3EZ120D5/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
Produkt ist nicht verfügbar
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2EZ16D2/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ16D2/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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2EZ16D2E3/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ16D2E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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2EZ16D5/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ16D5/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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2EZ16D5E3/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ16D5E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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2EZ16DE3/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ16DE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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2EZ16D/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ16D/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
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2EZ16D10/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ16D10/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
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1N5374Ae3/TR13 1N5333B-88B.pdf
1N5374Ae3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
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1N5374A/TR8 1N5333B-88B.pdf
1N5374A/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
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1N5374Ae3/TR8 1N5333B-88B.pdf
1N5374Ae3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
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JANTX1N4461CUS 124793-lds-0183-1-datasheet
JANTX1N4461CUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.8V 1.5W D5A
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4.08 V
Qualification: MIL-PRF-19500/406
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SMCG5656/TR13 SMC(G,J)5629-5665A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 73.7VWM 131VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 73.7V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 81.9V
Voltage - Clamping (Max) @ Ipp: 131V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCG5656E3/TR13 SMC(G,J)5629-5665A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 73.7VWM 131VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 73.7V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 81.9V
Voltage - Clamping (Max) @ Ipp: 131V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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JANTX1N4980CUS 11059-sd44a-datasheet
JANTX1N4980CUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/435
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JANTX1N4980DUS 11059-sd44a-datasheet
JANTX1N4980DUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W D5B
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/435
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SK14E3/TR13 SK12%20thru%20SK110.pdf
SK14E3/TR13
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMBJ)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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MSCD200-12 MSxD200.pdf
MSCD200-12
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 1200V 200A SD2
Packaging: Bulk
Package / Case: D2
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: SD2
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+82.28 EUR
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JANTXV2N3735 8978-lds-0173-datasheet
JANTXV2N3735
Hersteller: Microsemi Corporation
Description: TRANS NPN 40V 1.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-39
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/395
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689-4D, 4N, 4P 11557-wt3-27-datasheet
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 400V 15A ND
Packaging: Bulk
Package / Case: Nd
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: Nd
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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JANTX1N4962CUS 11059-sd44a-datasheet
JANTX1N4962CUS
Hersteller: Microsemi Corporation
Description: DIODE ZENER 15V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: MIL-PRF-19500/435
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JANTX2N6770 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
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JANTXV2N6770 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
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JANTXV2N6770T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
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2N6770 77270-lds-0101-datasheet
2N6770
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
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2N6770T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
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1N6302Ae3/TR13 DS_278_1.5KE Series.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 154VWM 246VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1N4698 (DO35) 125997-lds-0240-datasheet
1N4698 (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 11V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V
Produkt ist nicht verfügbar
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ARF448BG ARF448A,B.pdf
ARF448BG
Hersteller: Microsemi Corporation
Description: RF MOSFET 150V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 15A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 140W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Voltage - Rated: 450 V
Voltage - Test: 150 V
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ARF448AG ARF448A,B.pdf
ARF448AG
Hersteller: Microsemi Corporation
Description: RF MOSFET 150V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 15A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 230W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Voltage - Rated: 450 V
Voltage - Test: 150 V
Produkt ist nicht verfügbar
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VJ447M
VJ447M
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 900V 10A
Packaging: Bulk
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Avalanche
Voltage - Peak Reverse (Max): 900 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 900 V
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PD69104BILQ-TR index.php?option=com_docman&task=doc_download&gid=131919
PD69104BILQ-TR
Hersteller: Microsemi Corporation
Description: IC POE CNTRL 4 CHANNEL 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD)
Operating Temperature: -10°C ~ 85°C
Voltage - Supply: 44V ~ 57V
Current - Supply: 10mA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE)
Supplier Device Package: 48-QFN (8x8)
Auxiliary Sense: No
Number of Channels: 4
Power - Max: 25.5 W
Produkt ist nicht verfügbar
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MDS800 9490-mds800revb-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55ST-1
Packaging: Bulk
Package / Case: 55ST-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8.6dB
Power - Max: 1458W
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55ST-1
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MXLPLAD6.5KP70CA 129479-rf01083-datasheet
MXLPLAD6.5KP70CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD6.5KP70CAe3 129479-rf01083-datasheet
MXLPLAD6.5KP70CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP70CA 129479-rf01083-datasheet
MXPLAD6.5KP70CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD6.5KP70CAe3 129479-rf01083-datasheet
MXPLAD6.5KP70CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MAPLAD6.5KP70CA 129479-rf01083-datasheet
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MAPLAD6.5KP70CAe3 129479-rf01083-datasheet
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MPLAD6.5KP70CA 129479-rf01083-datasheet
MPLAD6.5KP70CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
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MPLAD6.5KP70CAe3 129479-rf01083-datasheet
MPLAD6.5KP70CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
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MSKD100-08 MSKD_SCHEM.jpg
MSKD100-08
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 800V 100A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
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APT44GA60BD30C APT44GA60xD30C.pdf
APT44GA60BD30C
Hersteller: Microsemi Corporation
Description: IGBT 600V 78A 337W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/102ns
Switching Energy: 409µJ (on), 450µJ (off)
Test Condition: 400V, 26A, 4.7Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 337 W
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APT8024B2LLG 7276-apt8024b2-lfll-c-pdf
APT8024B2LLG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 31A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.47 EUR
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APT130SM70B APT130SM70B.pdf
APT130SM70B
Hersteller: Microsemi Corporation
Description: SICFET N-CH 700V 110A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V
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1N4891 10939-sa6-27-datasheet
1N4891
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4891A 10939-sa6-27-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4892 10939-sa6-27-datasheet
1N4892
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4892A 10939-sa6-27-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4893 10939-sa6-27-datasheet
1N4893
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4893A 10939-sa6-27-datasheet
1N4893A
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4894 10939-sa6-27-datasheet
1N4894
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4894A 10939-sa6-27-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4895 10939-sa6-27-datasheet
1N4895
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.35V 400MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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1N4895A 10939-sa6-27-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
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3EZ120D/TR12 10926-sa5-67-datasheet
3EZ120D/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
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3EZ120D10/TR12 10926-sa5-67-datasheet
3EZ120D10/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
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3EZ120D10E3/TR12 10926-sa5-67-datasheet
3EZ120D10E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
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3EZ120D2/TR12 10926-sa5-67-datasheet
3EZ120D2/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
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3EZ120D2E3/TR12 10926-sa5-67-datasheet
3EZ120D2E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
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3EZ120D5/TR12 10926-sa5-67-datasheet
3EZ120D5/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 120V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 91.2 V
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