Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11124) > Seite 166 nach 186
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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1N5386BE3/TR13 | Microsemi Corporation |
 Description: DIODE ZENER 180V 5W T18Current - Reverse Leakage @ Vr: 500 nA @ 130 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Power - Max: 5 W Supplier Device Package: T-18 Impedance (Max) (Zzt): 430 Ohms Voltage - Zener (Nom) (Vz): 180 V Operating Temperature: -65°C ~ 150°C Mounting Type: Through Hole Package / Case: T-18, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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1N5386C/TR12 | Microsemi Corporation |
Description: DIODE ZENER 180V 5W T18 Current - Reverse Leakage @ Vr: 500 nA @ 130 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Power - Max: 5 W Supplier Device Package: T-18 Impedance (Max) (Zzt): 430 Ohms Voltage - Zener (Nom) (Vz): 180 V Operating Temperature: -65°C ~ 150°C Mounting Type: Through Hole Package / Case: T-18, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5386CE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 180V 5W T18 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 430 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 130 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5386E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 180V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 430 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 130 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5386E3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 180V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 430 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 130 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5386/TR8 | Microsemi Corporation |
Description: DIODE ZENER 180V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 430 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 130 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5386B/TR8 | Microsemi Corporation |
Description: DIODE ZENER 180V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 430 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 130 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5386BE3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 180V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 430 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 130 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5386CE3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 180V 5W T18 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 430 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 130 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5386E3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 180V 5W T18 Current - Reverse Leakage @ Vr: 500 nA @ 130 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Power - Max: 5 W Supplier Device Package: T-18 Impedance (Max) (Zzt): 430 Ohms Voltage - Zener (Nom) (Vz): 180 V Operating Temperature: -65°C ~ 150°C Mounting Type: Through Hole Package / Case: T-18, Axial Tolerance: ±20% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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| DRF1300/EVALSW | Microsemi Corporation |
Description: BOARD EVAL MOSFET HYBRID DRF1300 Packaging: Box Supplied Contents: Board(s) Utilized IC / Part: DRF1300 Type: Power Management Function: High Side Driver (Internal FET) |
Produkt ist nicht verfügbar |
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| DRF1300/CLASS-D | Microsemi Corporation |
Description: KIT REF DRF1300 13.56MHZ MOSFET Supplied Contents: Board(s) Utilized IC / Part: DRF1300 Type: Power Management Function: RF Generator Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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MSTC110-16 | Microsemi Corporation |
Description: SCR MODULE 1.6KV MODULE Packaging: Bulk Package / Case: Module Mounting Type: Screw Mount Operating Temperature: -40°C ~ 130°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 250 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 110 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - Off State: 1.6 kV |
Produkt ist nicht verfügbar |
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SMBJ5955B | Microsemi Corporation |
Description: DIODE ZENER 180V 2W SMBJ Tolerance: ±5% Packaging: Bulk Current - Reverse Leakage @ Vr: 1 µA @ 136.8 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 2 W Supplier Device Package: SMBJ (DO-214AA) Impedance (Max) (Zzt): 900 Ohms Voltage - Zener (Nom) (Vz): 180 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: DO-214AA, SMB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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2EZ62D5/TR8 | Microsemi Corporation |
Description: DIODE ZENER 62V 2W DO204AL Current - Reverse Leakage @ Vr: 500 nA @ 47.1 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 2 W Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 60 Ohms Voltage - Zener (Nom) (Vz): 62 V Operating Temperature: -65°C ~ 150°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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2EZ62D5/TR8 | Microsemi Corporation |
Description: DIODE ZENER 62V 2W DO204AL Current - Reverse Leakage @ Vr: 500 nA @ 47.1 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 2 W Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 60 Ohms Voltage - Zener (Nom) (Vz): 62 V Operating Temperature: -65°C ~ 150°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Cut Tape (CT) |
auf Bestellung 2274 Stücke: Lieferzeit 10-14 Tag (e) |
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VJ448XM | Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 400V 10A VJ Packaging: Bulk Package / Case: 4-Square, VJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: VJ Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 21 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| JANTX1N4968C | Microsemi Corporation |
Description: DIODE ZENER 27V 5W E-AXIAL Tolerance: ±2% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: E, Axial Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V Qualification: MIL-PRF-19500/435 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JANTX1N4967D | Microsemi Corporation |
Description: DIODE ZENER 24V 5W E AXIAL Tolerance: ±1% Packaging: Bulk Package / Case: E, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: E, Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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1N5930AG | Microsemi Corporation |
Description: DIODE ZENER 16V 1.25W DO204AL Tolerance: ±10% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 313 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5930BG | Microsemi Corporation |
Description: DIODE ZENER 16V 1.25W DO204AL Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 313 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5930CG | Microsemi Corporation |
Description: DIODE ZENER 16V 1.25W DO204AL Tolerance: ±2% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 157 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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1N5930DG | Microsemi Corporation |
Description: DIODE ZENER 16V 1.25W DO204AL Tolerance: ±1% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 125 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| MSAD60-18 | Microsemi Corporation |
Description: DIODE MODULE GP 1800V 60A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: D1 Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 1800 V |
Produkt ist nicht verfügbar |
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| MSCD60-18 | Microsemi Corporation |
Description: DIODE MODULE GP 1800V 60A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: D1 Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 1800 V |
Produkt ist nicht verfügbar |
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| MSKD60-18 | Microsemi Corporation |
Description: DIODE MODULE GP 1800V 60A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: D1 Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A Current - Reverse Leakage @ Vr: 5 mA @ 1800 V |
Produkt ist nicht verfügbar |
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LX1664CD | Microsemi Corporation |
Description: IC REG CTRLR INTEL 2OUT 16SOIC Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Voltage - Output: 1.8V ~ 2.8V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 10.8V ~ 13.2V Operating Temperature: 0°C ~ 70°C Applications: Controller, Intel Pentium® II Supplier Device Package: 16-SOIC |
Produkt ist nicht verfügbar |
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LX1664ACD | Microsemi Corporation |
Description: IC REG CTRLR INTEL 2OUT 16SOIC Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Voltage - Output: 1.8V ~ 2.8V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 10.8V ~ 13.2V Operating Temperature: 0°C ~ 70°C Applications: Controller, Intel Pentium® II Supplier Device Package: 16-SOIC |
Produkt ist nicht verfügbar |
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| LX1664ACN | Microsemi Corporation |
Description: IC REG CTRLR INTEL 2OUT 16DIP Packaging: Bulk Package / Case: 16-DIP Voltage - Output: 1.8V ~ 2.8V Mounting Type: Through Hole Number of Outputs: 2 Voltage - Input: 10.8V ~ 13.2V Operating Temperature: 0°C ~ 70°C Applications: Controller, Intel Pentium® II Supplier Device Package: 16-DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| LX1664CN | Microsemi Corporation |
Description: IC REG CTRLR INTEL 2OUT 16DIP Packaging: Bulk Package / Case: 16-DIP Voltage - Output: 1.8V ~ 2.8V Mounting Type: Through Hole Number of Outputs: 2 Voltage - Input: 10.8V ~ 13.2V Operating Temperature: 0°C ~ 70°C Applications: Controller, Intel Pentium® II Supplier Device Package: 16-DIP |
Produkt ist nicht verfügbar |
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JAN2N6796 | Microsemi Corporation |
Description: MOSFET N-CH 100V 8A TO39 Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V Qualification: MIL-PRF-19500/557 |
Produkt ist nicht verfügbar |
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| JAN2N6796U | Microsemi Corporation |
Description: MOSFET N-CH 100V 8A 18ULCC Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V Qualification: MIL-PRF-19500/557 |
Produkt ist nicht verfügbar |
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JANTX2N6796 | Microsemi Corporation |
Description: MOSFET N-CH 100V 8A TO205AF Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-205AF (TO-39) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V Qualification: MIL-PRF-19500/557 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| JANTX2N6796U | Microsemi Corporation |
Description: MOSFET N-CH 100V 8A 18ULCC Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V Qualification: MIL-PRF-19500/557 |
Produkt ist nicht verfügbar |
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JANTXV2N6796 | Microsemi Corporation |
Description: MOSFET N-CH 100V 8A TO205AF Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-205AF (TO-39) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V Qualification: MIL-PRF-19500/557 |
Produkt ist nicht verfügbar |
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| JANTXV2N6796U | Microsemi Corporation |
Description: MOSFET N-CH 100V 8A 18ULCC Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V Qualification: MIL-PRF-19500/557 |
Produkt ist nicht verfügbar |
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2N6796 | Microsemi Corporation |
Description: MOSFET N-CH 100V 8A TO39 Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.34 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| 2N6796U | Microsemi Corporation |
Description: MOSFET N-CH 100V 8A 18ULCC Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250mA Supplier Device Package: 18-ULCC (9.14x7.49) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.34 nC @ 10 V |
Produkt ist nicht verfügbar |
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| 090-00218-001 | Microsemi Corporation |
Description: XTAL OSC ATOMIC 10.0000MHZ CMOS Base Resonator: Crystal Frequency: 10 MHz Height - Seated (Max): 0.460" (11.68mm) Voltage - Supply: 3.3V Frequency Stability: ±0.5ppb Operating Temperature: -10°C ~ 70°C Type: Atomic Output: CMOS Mounting Type: Through Hole Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm) Package / Case: 12-DIP Module, 9 Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
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| 090-00218-003 | Microsemi Corporation |
Description: XTAL OSC ATOMIC 16.3840MHZ CMOS Voltage - Supply: 3.3V Frequency Stability: ±0.5ppb Operating Temperature: -10°C ~ 70°C Type: Atomic Output: CMOS Mounting Type: Through Hole Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm) Package / Case: 12-DIP Module, 9 Leads Packaging: Bulk Base Resonator: Crystal Frequency: 16.384 MHz Height - Seated (Max): 0.460" (11.68mm) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| 090-00218-006 | Microsemi Corporation |
Description: XTAL OSC ATOMIC 5.0000MHZ CMOS Base Resonator: Crystal Frequency: 5 MHz Height - Seated (Max): 0.460" (11.68mm) Voltage - Supply: 3.3V Frequency Stability: ±0.5ppb Operating Temperature: -10°C ~ 70°C Type: Atomic Output: CMOS Mounting Type: Through Hole Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm) Package / Case: 12-DIP Module, 9 Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| 090-02984-004 | Microsemi Corporation |
Description: XTAL OSC ATOMIC 10.2400MHZ CMOS Packaging: Bulk Package / Case: 12-DIP Module, 9 Leads Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm) Mounting Type: Through Hole Output: CMOS Type: Atomic Operating Temperature: -10°C ~ 70°C Frequency Stability: ±0.5ppb Voltage - Supply: 3.3V Height - Seated (Max): 0.460" (11.68mm) Frequency: 10.24 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| 090-02984-006 | Microsemi Corporation |
Description: XTAL OSC ATOMIC 5.0000MHZ CMOS Packaging: Bulk Package / Case: 12-DIP Module, 9 Leads Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm) Mounting Type: Through Hole Output: CMOS Type: Atomic Operating Temperature: -10°C ~ 70°C Frequency Stability: ±0.5ppb Voltage - Supply: 3.3V Height - Seated (Max): 0.460" (11.68mm) Frequency: 5 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JAN2N6756 | Microsemi Corporation |
Description: MOSFET N-CH 100V 14A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Qualification: MIL-PRF-19500/542 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JAN2N6758 | Microsemi Corporation |
Description: MOSFET N-CH 200V 9A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JAN2N6762 | Microsemi Corporation |
Description: MOSFET N-CH 500V 4.5A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JAN2N6764 | Microsemi Corporation |
Description: MOSFET N-CH 100V 38A TO204AE Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/543 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JAN2N6764T1 | Microsemi Corporation |
Description: MOSFET N-CH 100V 38A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JAN2N6766T1 | Microsemi Corporation |
Description: MOSFET N-CH 200V 30A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JAN2N6770 | Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO204AE Qualification: MIL-PRF-19500/543 Grade: Military Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-204AE (TO-3) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AE Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JAN2N6770T1 | Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO254AA Qualification: MIL-PRF-19500/543 Grade: Military Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-254AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA (Straight Leads) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
|
|
JAN2N6784 | Microsemi Corporation |
Description: MOSFET N-CH 200V 2.25A TO39 Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 800mW (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AF Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| JAN2N6784U | Microsemi Corporation |
Description: MOSFET N-CH 200V 2.25A 18ULCC Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 18-ULCC (9.14x7.49) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 800mW (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 18-CLCC Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
|
|
JAN2N6798 | Microsemi Corporation |
Description: MOSFET N-CH 200V 5.5A TO39 Gate Charge (Qg) (Max) @ Vgs: 42.07 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AF Metal Can Packaging: Bulk Qualification: MIL-PRF-19500/557 Grade: Military |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| JAN2N6798U | Microsemi Corporation |
Description: MOSFET N-CH 200V 5.5A 18ULCC Supplier Device Package: 18-ULCC (9.14x7.49) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 18-CLCC Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 42.07 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Qualification: MIL-PRF-19500/557 Grade: Military |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JANTX2N6756 | Microsemi Corporation |
Description: MOSFET N-CH 100V 14A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Qualification: MIL-PRF-19500/542 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JANTX2N6758 | Microsemi Corporation |
Description: MOSFET N-CH 200V 9A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Qualification: MIL-PRF-19500/542 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JANTX2N6762 | Microsemi Corporation |
Description: MOSFET N-CH 500V 4.5A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Qualification: MIL-PRF-19500/542 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JANTX2N6764 | Microsemi Corporation |
Description: MOSFET N-CH 100V 38A TO3 Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/543 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| JANTX2N6764T1 | Microsemi Corporation |
Description: MOSFET N-CH 100V 38A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/543 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5386BE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 5W T18
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Power - Max: 5 W
Supplier Device Package: T-18
Impedance (Max) (Zzt): 430 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 180V 5W T18
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Power - Max: 5 W
Supplier Device Package: T-18
Impedance (Max) (Zzt): 430 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5386C/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 5W T18
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Power - Max: 5 W
Supplier Device Package: T-18
Impedance (Max) (Zzt): 430 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 180V 5W T18
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Power - Max: 5 W
Supplier Device Package: T-18
Impedance (Max) (Zzt): 430 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5386CE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Description: DIODE ZENER 180V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5386E3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Description: DIODE ZENER 180V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5386E3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Description: DIODE ZENER 180V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5386/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Description: DIODE ZENER 180V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5386B/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Description: DIODE ZENER 180V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5386BE3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Description: DIODE ZENER 180V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Produkt ist nicht verfügbar
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| 1N5386CE3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Description: DIODE ZENER 180V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 430 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Produkt ist nicht verfügbar
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| 1N5386E3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 5W T18
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Power - Max: 5 W
Supplier Device Package: T-18
Impedance (Max) (Zzt): 430 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 180V 5W T18
Current - Reverse Leakage @ Vr: 500 nA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Power - Max: 5 W
Supplier Device Package: T-18
Impedance (Max) (Zzt): 430 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: T-18, Axial
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| DRF1300/EVALSW |
|
Hersteller: Microsemi Corporation
Description: BOARD EVAL MOSFET HYBRID DRF1300
Packaging: Box
Supplied Contents: Board(s)
Utilized IC / Part: DRF1300
Type: Power Management
Function: High Side Driver (Internal FET)
Description: BOARD EVAL MOSFET HYBRID DRF1300
Packaging: Box
Supplied Contents: Board(s)
Utilized IC / Part: DRF1300
Type: Power Management
Function: High Side Driver (Internal FET)
Produkt ist nicht verfügbar
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| DRF1300/CLASS-D |
|
Hersteller: Microsemi Corporation
Description: KIT REF DRF1300 13.56MHZ MOSFET
Supplied Contents: Board(s)
Utilized IC / Part: DRF1300
Type: Power Management
Function: RF Generator
Packaging: Box
Description: KIT REF DRF1300 13.56MHZ MOSFET
Supplied Contents: Board(s)
Utilized IC / Part: DRF1300
Type: Power Management
Function: RF Generator
Packaging: Box
Produkt ist nicht verfügbar
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| MSTC110-16 |
|
Hersteller: Microsemi Corporation
Description: SCR MODULE 1.6KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Screw Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Screw Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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| SMBJ5955B |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 180V 2W SMBJ
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 136.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: SMBJ (DO-214AA)
Impedance (Max) (Zzt): 900 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Description: DIODE ZENER 180V 2W SMBJ
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 136.8 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: SMBJ (DO-214AA)
Impedance (Max) (Zzt): 900 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Produkt ist nicht verfügbar
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| 2EZ62D5/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 62V 2W DO204AL
Current - Reverse Leakage @ Vr: 500 nA @ 47.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 62V 2W DO204AL
Current - Reverse Leakage @ Vr: 500 nA @ 47.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| 2EZ62D5/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 62V 2W DO204AL
Current - Reverse Leakage @ Vr: 500 nA @ 47.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 62V 2W DO204AL
Current - Reverse Leakage @ Vr: 500 nA @ 47.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 2 W
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 62 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 2274 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.25 EUR |
| 10+ | 6.93 EUR |
| 25+ | 6.53 EUR |
| 100+ | 5.6 EUR |
| VJ448XM |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 400V 10A VJ
Packaging: Bulk
Package / Case: 4-Square, VJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: VJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 10A VJ
Packaging: Bulk
Package / Case: 4-Square, VJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: VJ
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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| JANTX1N4968C |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 27V 5W E-AXIAL
Tolerance: ±2%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 27V 5W E-AXIAL
Tolerance: ±2%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: E, Axial
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 20.6 V
Qualification: MIL-PRF-19500/435
Produkt ist nicht verfügbar
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| JANTX1N4967D |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 5W E AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Description: DIODE ZENER 24V 5W E AXIAL
Tolerance: ±1%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: E, Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 18.2 V
Produkt ist nicht verfügbar
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| 1N5930AG |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Description: DIODE ZENER 16V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Produkt ist nicht verfügbar
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| 1N5930BG |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Description: DIODE ZENER 16V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Produkt ist nicht verfügbar
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| 1N5930CG |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Description: DIODE ZENER 16V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Produkt ist nicht verfügbar
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| 1N5930DG |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 1.25W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Description: DIODE ZENER 16V 1.25W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
Produkt ist nicht verfügbar
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| MSAD60-18 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 1800V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1800 V
Description: DIODE MODULE GP 1800V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1800 V
Produkt ist nicht verfügbar
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| MSCD60-18 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 1800V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1800 V
Description: DIODE MODULE GP 1800V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1800 V
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| MSKD60-18 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 1800V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1800 V
Description: DIODE MODULE GP 1800V 60A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1800 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LX1664CD |
|
Hersteller: Microsemi Corporation
Description: IC REG CTRLR INTEL 2OUT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-SOIC
Description: IC REG CTRLR INTEL 2OUT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
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| LX1664ACD |
|
Hersteller: Microsemi Corporation
Description: IC REG CTRLR INTEL 2OUT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-SOIC
Description: IC REG CTRLR INTEL 2OUT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
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| LX1664ACN |
|
Hersteller: Microsemi Corporation
Description: IC REG CTRLR INTEL 2OUT 16DIP
Packaging: Bulk
Package / Case: 16-DIP
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Through Hole
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-DIP
Description: IC REG CTRLR INTEL 2OUT 16DIP
Packaging: Bulk
Package / Case: 16-DIP
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Through Hole
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-DIP
Produkt ist nicht verfügbar
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| LX1664CN |
|
Hersteller: Microsemi Corporation
Description: IC REG CTRLR INTEL 2OUT 16DIP
Packaging: Bulk
Package / Case: 16-DIP
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Through Hole
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-DIP
Description: IC REG CTRLR INTEL 2OUT 16DIP
Packaging: Bulk
Package / Case: 16-DIP
Voltage - Output: 1.8V ~ 2.8V
Mounting Type: Through Hole
Number of Outputs: 2
Voltage - Input: 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 70°C
Applications: Controller, Intel Pentium® II
Supplier Device Package: 16-DIP
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| JAN2N6796 |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
Description: MOSFET N-CH 100V 8A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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| JAN2N6796U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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Stück im Wert von UAH
| JANTX2N6796 |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A TO205AF
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
Description: MOSFET N-CH 100V 8A TO205AF
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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| JANTX2N6796U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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Stück im Wert von UAH
| JANTXV2N6796 |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
Description: MOSFET N-CH 100V 8A TO205AF
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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Stück im Wert von UAH
| JANTXV2N6796U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 8A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.51 nC @ 10 V
Qualification: MIL-PRF-19500/557
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Stück im Wert von UAH
| 2N6796 |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.34 nC @ 10 V
Description: MOSFET N-CH 100V 8A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.34 nC @ 10 V
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Stück im Wert von UAH
| 2N6796U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.34 nC @ 10 V
Description: MOSFET N-CH 100V 8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.34 nC @ 10 V
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Stück im Wert von UAH
| 090-00218-001 |
|
Hersteller: Microsemi Corporation
Description: XTAL OSC ATOMIC 10.0000MHZ CMOS
Base Resonator: Crystal
Frequency: 10 MHz
Height - Seated (Max): 0.460" (11.68mm)
Voltage - Supply: 3.3V
Frequency Stability: ±0.5ppb
Operating Temperature: -10°C ~ 70°C
Type: Atomic
Output: CMOS
Mounting Type: Through Hole
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Package / Case: 12-DIP Module, 9 Leads
Packaging: Bulk
Description: XTAL OSC ATOMIC 10.0000MHZ CMOS
Base Resonator: Crystal
Frequency: 10 MHz
Height - Seated (Max): 0.460" (11.68mm)
Voltage - Supply: 3.3V
Frequency Stability: ±0.5ppb
Operating Temperature: -10°C ~ 70°C
Type: Atomic
Output: CMOS
Mounting Type: Through Hole
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Package / Case: 12-DIP Module, 9 Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 090-00218-003 |
|
Hersteller: Microsemi Corporation
Description: XTAL OSC ATOMIC 16.3840MHZ CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±0.5ppb
Operating Temperature: -10°C ~ 70°C
Type: Atomic
Output: CMOS
Mounting Type: Through Hole
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Package / Case: 12-DIP Module, 9 Leads
Packaging: Bulk
Base Resonator: Crystal
Frequency: 16.384 MHz
Height - Seated (Max): 0.460" (11.68mm)
Description: XTAL OSC ATOMIC 16.3840MHZ CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±0.5ppb
Operating Temperature: -10°C ~ 70°C
Type: Atomic
Output: CMOS
Mounting Type: Through Hole
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Package / Case: 12-DIP Module, 9 Leads
Packaging: Bulk
Base Resonator: Crystal
Frequency: 16.384 MHz
Height - Seated (Max): 0.460" (11.68mm)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 090-00218-006 |
|
Hersteller: Microsemi Corporation
Description: XTAL OSC ATOMIC 5.0000MHZ CMOS
Base Resonator: Crystal
Frequency: 5 MHz
Height - Seated (Max): 0.460" (11.68mm)
Voltage - Supply: 3.3V
Frequency Stability: ±0.5ppb
Operating Temperature: -10°C ~ 70°C
Type: Atomic
Output: CMOS
Mounting Type: Through Hole
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Package / Case: 12-DIP Module, 9 Leads
Packaging: Bulk
Description: XTAL OSC ATOMIC 5.0000MHZ CMOS
Base Resonator: Crystal
Frequency: 5 MHz
Height - Seated (Max): 0.460" (11.68mm)
Voltage - Supply: 3.3V
Frequency Stability: ±0.5ppb
Operating Temperature: -10°C ~ 70°C
Type: Atomic
Output: CMOS
Mounting Type: Through Hole
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Package / Case: 12-DIP Module, 9 Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 090-02984-004 |
Hersteller: Microsemi Corporation
Description: XTAL OSC ATOMIC 10.2400MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 10.24 MHz
Base Resonator: Crystal
Description: XTAL OSC ATOMIC 10.2400MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 10.24 MHz
Base Resonator: Crystal
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Stück im Wert von UAH
| 090-02984-006 |
Hersteller: Microsemi Corporation
Description: XTAL OSC ATOMIC 5.0000MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 5 MHz
Base Resonator: Crystal
Description: XTAL OSC ATOMIC 5.0000MHZ CMOS
Packaging: Bulk
Package / Case: 12-DIP Module, 9 Leads
Size / Dimension: 1.600" L x 1.390" W (40.64mm x 35.31mm)
Mounting Type: Through Hole
Output: CMOS
Type: Atomic
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±0.5ppb
Voltage - Supply: 3.3V
Height - Seated (Max): 0.460" (11.68mm)
Frequency: 5 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N6756 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Qualification: MIL-PRF-19500/542
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Qualification: MIL-PRF-19500/542
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JAN2N6758 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 9A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Description: MOSFET N-CH 200V 9A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JAN2N6762 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 4.5A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Description: MOSFET N-CH 500V 4.5A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
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| JAN2N6764 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 38A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/543
Description: MOSFET N-CH 100V 38A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/543
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| JAN2N6764T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 38A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Description: MOSFET N-CH 100V 38A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
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| JAN2N6766T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Description: MOSFET N-CH 200V 30A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
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| JAN2N6770 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO204AE
Qualification: MIL-PRF-19500/543
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE (TO-3)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Bulk
Description: MOSFET N-CH 500V 12A TO204AE
Qualification: MIL-PRF-19500/543
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE (TO-3)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Bulk
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| JAN2N6770T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Qualification: MIL-PRF-19500/543
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
Description: MOSFET N-CH 500V 12A TO254AA
Qualification: MIL-PRF-19500/543
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Packaging: Bulk
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Stück im Wert von UAH
| JAN2N6784 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 2.25A TO39
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
Description: MOSFET N-CH 200V 2.25A TO39
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
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| JAN2N6784U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 2.25A 18ULCC
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
Description: MOSFET N-CH 200V 2.25A 18ULCC
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
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| JAN2N6798 |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 5.5A TO39
Gate Charge (Qg) (Max) @ Vgs: 42.07 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/557
Grade: Military
Description: MOSFET N-CH 200V 5.5A TO39
Gate Charge (Qg) (Max) @ Vgs: 42.07 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/557
Grade: Military
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| JAN2N6798U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 5.5A 18ULCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 42.07 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Qualification: MIL-PRF-19500/557
Grade: Military
Description: MOSFET N-CH 200V 5.5A 18ULCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 42.07 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Qualification: MIL-PRF-19500/557
Grade: Military
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| JANTX2N6756 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Qualification: MIL-PRF-19500/542
Description: MOSFET N-CH 100V 14A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Qualification: MIL-PRF-19500/542
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| JANTX2N6758 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 9A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Qualification: MIL-PRF-19500/542
Description: MOSFET N-CH 200V 9A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 9A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Qualification: MIL-PRF-19500/542
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| JANTX2N6762 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 4.5A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Qualification: MIL-PRF-19500/542
Description: MOSFET N-CH 500V 4.5A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Qualification: MIL-PRF-19500/542
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| JANTX2N6764 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 38A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/543
Description: MOSFET N-CH 100V 38A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/543
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| JANTX2N6764T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 38A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/543
Description: MOSFET N-CH 100V 38A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/543
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