Die Produkte microsemi corporation
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
|---|---|---|---|---|---|---|
| A54SX32-1CQ208M |
|
Microsemi Corporation |
Description: IC FPGA 174 I/O 208CQFP Base Part Number: A54SX32 Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TC) Part Status: Active Packaging: Tray Mounting Type: Surface Mount Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V Number of Gates: 48000 Number of I/O: 174 Number of LABs/CLBs: 2880 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| A14100A-1CQ256M |
|
Microsemi Corporation |
Description: IC FPGA 228 I/O 256CQFP Packaging: Tray Part Status: Obsolete Number of LABs/CLBs: 1377 Number of I/O: 228 Number of Gates: 10000 Voltage - Supply: 4.5V ~ 5.5V Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TC) Package / Case: 256-BFCQFP with Tie Bar Supplier Device Package: 256-CQFP (75x75) Base Part Number: A14100 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| A1280A-1CQ172B |
|
Microsemi Corporation |
Description: IC FPGA 140 I/O 172CQFP Supplier Device Package: 172-CQFP (63.37x63.37) Package / Case: 172-CQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Voltage - Supply: 4.5V ~ 5.5V Number of Gates: 8000 Number of I/O: 140 Number of LABs/CLBs: 1232 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
 |
A42MX36-CQ208B |
|
Microsemi Corporation |
Description: IC FPGA 176 I/O 208CQFP Packaging: Tray Base Part Number: A42MX36 Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Number of Gates: 54000 Number of I/O: 176 Total RAM Bits: 2560 Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
A54SX72A-CQ208M |
|
Microsemi Corporation |
Description: IC FPGA 171 I/O 208CQFP Base Part Number: A54SX72A Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Surface Mount Voltage - Supply: 2.25V ~ 5.25V Number of Gates: 108000 Number of I/O: 171 Number of LABs/CLBs: 6036 Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| AX2000-1FG1152M |
|
Microsemi Corporation |
Description: IC FPGA 684 I/O 1152FBGA Base Part Number: AX2000 Supplier Device Package: 1152-FPBGA (35x35) Package / Case: 1152-BGA Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Voltage - Supply: 1.425V ~ 1.575V Number of Gates: 2000000 Number of I/O: 684 Total RAM Bits: 294912 Number of LABs/CLBs: 32256 Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| A14100A-PG257B |
|
Microsemi Corporation |
Description: IC FPGA 228 I/O 257CPGA Packaging: Tray Part Status: Obsolete Number of LABs/CLBs: 1377 Number of I/O: 228 Number of Gates: 10000 Voltage - Supply: 4.5V ~ 5.5V Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C (TJ) Package / Case: 257-BCPGA Supplier Device Package: 257-CPGA (50x50) Manufacturer: Microsemi Corporation Base Part Number: A14100 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
|
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A54SX32A-CQ208B |
|
Microsemi Corporation |
Description: IC FPGA 174 I/O 208CQFP Base Part Number: A54SX32A Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Voltage - Supply: 2.25V ~ 5.25V Number of Gates: 48000 Number of I/O: 174 Number of LABs/CLBs: 2880 Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
A54SX72A-CQ256M |
|
Microsemi Corporation |
Description: IC FPGA 213 I/O 256CQFP Base Part Number: A54SX72A Supplier Device Package: 256-CQFP (75x75) Package / Case: 256-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Surface Mount Voltage - Supply: 2.25V ~ 5.25V Number of Gates: 108000 Number of I/O: 213 Number of LABs/CLBs: 6036 Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
A42MX36-1CQ208B |
|
Microsemi Corporation |
Description: IC FPGA 176 I/O 208CQFP Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Number of Gates: 54000 Number of I/O: 176 Total RAM Bits: 2560 Part Status: Active Packaging: Tray Base Part Number: A42MX36 Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| A54SX32-CQ208B |
|
Microsemi Corporation |
Description: IC FPGA 174 I/O 208CQFP Mounting Type: Surface Mount Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V Number of Gates: 48000 Number of I/O: 174 Number of LABs/CLBs: 2880 Part Status: Not For New Designs Packaging: Tray Base Part Number: A54SX32 Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
|
|
A54SX72A-1CQ208M |
|
Microsemi Corporation |
Description: IC FPGA 171 I/O 208CQFP Base Part Number: A54SX72A Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Surface Mount Voltage - Supply: 2.25V ~ 5.25V Number of Gates: 108000 Number of I/O: 171 Number of LABs/CLBs: 6036 Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
APA600-CQ208B |
|
Microsemi Corporation |
Description: IC FPGA 158 I/O 208CQFP Number of Gates: 600000 Number of I/O: 158 Total RAM Bits: 129024 Part Status: Active Packaging: Tray Base Part Number: APA600 Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Voltage - Supply: 2.3V ~ 2.7V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| A14100A-CQ256B |
|
Microsemi Corporation |
Description: IC FPGA 228 I/O 256CQFP Supplier Device Package: 256-CQFP (75x75) Package / Case: 256-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Voltage - Supply: 4.5V ~ 5.5V Number of Gates: 10000 Number of I/O: 228 Number of LABs/CLBs: 264 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| A14100A-1PG257B |
|
Microsemi Corporation |
Description: IC FPGA 228 I/O 257CPGA Packaging: Tray Part Status: Obsolete Number of LABs/CLBs: 1377 Number of I/O: 228 Number of Gates: 10000 Voltage - Supply: 4.5V ~ 5.5V Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C (TJ) Package / Case: 257-BCPGA Supplier Device Package: 257-CPGA (50x50) Manufacturer: Microsemi Corporation Base Part Number: A14100 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
|
|
A54SX32A-1CQ208B |
|
Microsemi Corporation |
Description: IC FPGA 174 I/O 208CQFP Number of I/O: 174 Number of LABs/CLBs: 2880 Part Status: Active Packaging: Tray Base Part Number: A54SX32A Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Voltage - Supply: 2.25V ~ 5.25V Number of Gates: 48000 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| A54SX32-1CQ208B |
|
Microsemi Corporation |
Description: IC FPGA 174 I/O 208CQFP Base Part Number: A54SX32 Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V Number of Gates: 48000 Number of I/O: 174 Number of LABs/CLBs: 2880 Part Status: Not For New Designs Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| A14100A-1CQ256B |
|
Microsemi Corporation |
Description: IC FPGA 228 I/O 256CQFP Packaging: Tray Part Status: Obsolete Number of LABs/CLBs: 1377 Number of I/O: 228 Number of Gates: 10000 Voltage - Supply: 4.5V ~ 5.5V Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TJ) Package / Case: 256-BFCQFP with Tie Bar Supplier Device Package: 256-CQFP (75x75) Base Part Number: A14100 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
|
|
A54SX72A-CQ208B |
|
Microsemi Corporation |
Description: IC FPGA 171 I/O 208CQFP Part Status: Active Packaging: Tray Base Part Number: A54SX72A Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Voltage - Supply: 2.25V ~ 5.25V Number of Gates: 108000 Number of I/O: 171 Number of LABs/CLBs: 6036 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
A54SX72A-1CQ208B |
|
Microsemi Corporation |
Description: IC FPGA 171 I/O 208CQFP Packaging: Tray Base Part Number: A54SX72A Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Voltage - Supply: 2.25V ~ 5.25V Number of Gates: 108000 Number of I/O: 171 Number of LABs/CLBs: 6036 Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
APA1000-CQ208M |
|
Microsemi Corporation |
Description: IC FPGA 158 I/O 208CQFP Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Surface Mount Voltage - Supply: 2.3V ~ 2.7V Number of Gates: 1000000 Number of I/O: 158 Total RAM Bits: 202752 Part Status: Active Packaging: Tray Base Part Number: APA1000 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
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APA1000-CQ208B |
|
Microsemi Corporation |
Description: IC FPGA 158 I/O 208CQFP Base Part Number: APA1000 Supplier Device Package: 208-CQFP (75x75) Package / Case: 208-BFCQFP with Tie Bar Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Voltage - Supply: 2.3V ~ 2.7V Number of Gates: 1000000 Number of I/O: 158 Total RAM Bits: 202752 Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
JAN1N3611 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 200V 1A AXIAL Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 100µA @ 300V Mounting Type: Through Hole Package / Case: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
CDLL483B |
|
Microsemi Corporation |
Description: DIODE GEN PURP 80V 200MA DO213AA Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AA Package / Case: DO-213AA Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 100µA @ 80V Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Current - Average Rectified (Io): 200mA Voltage - DC Reverse (Vr) (Max): 80V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
DSB5818 | Microsemi Corporation |
Description: DIODE SCHOTTKY 30V 1A DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Diode Type: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 100 nA @ 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
 |
CDLL485B |
|
Microsemi Corporation |
Description: DIODE GEN PURP 180V 200MA DO213 Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AA Part Status: Active Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 100µA @ 180V Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Current - Average Rectified (Io): 200mA Voltage - DC Reverse (Vr) (Max): 180V Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
1N3957 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Bulk Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 1µA @ 1000V Mounting Type: Through Hole Package / Case: A, Axial Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
1N5614 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 200V 1A AXIAL Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Bulk Operating Temperature - Junction: -65°C ~ 200°C Package / Case: A, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 500nA @ 200V Reverse Recovery Time (trr): 2µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Current - Average Rectified (Io): 1A |
auf Bestellung 223 Stücke Lieferzeit 21-28 Tag (e) |
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1N5616 |
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Microsemi Corporation |
Description: DIODE GEN PURP 400V 1A AXIAL Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Bulk Operating Temperature - Junction: -65°C ~ 200°C Package / Case: A, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 500nA @ 400V Reverse Recovery Time (trr): 2µs Speed: Standard Recovery >500ns, > 200mA (Io) |
auf Bestellung 1710 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
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1N4944 |
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Microsemi Corporation |
Description: DIODE GEN PURP 400V 1A AXIAL Part Status: Discontinued at Digi-Key Packaging: Bulk Operating Temperature - Junction: -65°C ~ 175°C Package / Case: A, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 35pF @ 12V, 1MHz Current - Reverse Leakage @ Vr: 1µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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1N4946 |
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Microsemi Corporation |
Description: DIODE GEN PURP 600V 1A AXIAL Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: Axial Package / Case: A, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 25pF @ 12V, 1MHz Current - Reverse Leakage @ Vr: 1µA @ 600V Reverse Recovery Time (trr): 250ns Diode Type: Standard Part Status: Active Packaging: Bulk Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 600V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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1N4249 |
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Microsemi Corporation |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Bulk Part Status: Obsolete Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 1µA @ 1000V Mounting Type: Through Hole Package / Case: A, Axial Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3161 Stücke - Preis und Lieferfrist anzeigen
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1N6620 |
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Microsemi Corporation |
Description: DIODE GEN PURP 220V 1.2A AXIAL Mounting Type: Through Hole Operating Temperature - Junction: -65°C ~ 150°C Package / Case: A, Axial Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Reverse Leakage @ Vr: 500nA @ 220V Reverse Recovery Time (trr): 30ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Current - Average Rectified (Io): 1.2A Voltage - DC Reverse (Vr) (Max): 220V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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1N5190 |
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Microsemi Corporation |
Description: DIODE GEN PURP 600V 3A AXIAL Operating Temperature - Junction: -65°C ~ 175°C Reverse Recovery Time (trr): 400ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 2µA @ 600V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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UPR60/TR13 |
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Microsemi Corporation |
Description: DIODE GEN PURP 600V 2A POWERMITE Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Base Part Number: UPR60 Operating Temperature - Junction: -55°C ~ 150°C Packaging: Tape & Reel (TR) Supplier Device Package: Powermite Package / Case: DO-216AA Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 1µA @ 600V Reverse Recovery Time (trr): 30ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A Current - Average Rectified (Io): 2A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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1N5623 |
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Microsemi Corporation |
Description: DIODE GEN PURP 1KV 1A AXIAL Operating Temperature - Junction: -65°C ~ 175°C Package / Case: A, Axial Mounting Type: Through Hole Voltage - DC Reverse (Vr) (Max): 1000V Capacitance @ Vr, F: 15pF @ 12V, 1MHz Current - Reverse Leakage @ Vr: 500nA @ 1000V Reverse Recovery Time (trr): 500ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Current - Average Rectified (Io): 1A Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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JAN1N3957 |
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Microsemi Corporation |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100µA @ 300V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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UPR60/TR7 |
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Microsemi Corporation |
Description: DIODE GEN PURP 600V 2A POWERMITE Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: UPR60 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Powermite Package / Case: DO-216AA Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 1µA @ 600V Reverse Recovery Time (trr): 30ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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CDLL486B |
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Microsemi Corporation |
Description: DIODE GEN PURP 250V 200MA DO213 Part Status: Active Packaging: Bulk Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AA Package / Case: DO-213AA Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 100µA @ 250V Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Current - Average Rectified (Io): 200mA Voltage - DC Reverse (Vr) (Max): 250V Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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CDLL5818 |
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Microsemi Corporation |
Description: DIODE SCHOTTKY 30V 1A DO213AB Supplier Device Package: DO-213AB Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz Current - Reverse Leakage @ Vr: 100µA @ 30V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 30V Diode Type: Schottky Part Status: Active Packaging: Bulk Operating Temperature - Junction: -65°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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JAN1N4249 |
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Microsemi Corporation |
Description: DIODE GEN PURP 1KV 1A AXIAL Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Package / Case: A, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 1µA @ 1000V Reverse Recovery Time (trr): 5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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JAN1N4946 |
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Microsemi Corporation |
Description: DIODE GEN PURP 600V 1A AXIAL Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Package / Case: A, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 1µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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1N5805 |
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Microsemi Corporation |
Description: DIODE GEN PURP 125V 1A AXIAL Current - Reverse Leakage @ Vr: 1µA @ 125V Reverse Recovery Time (trr): 25ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 125V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Bulk Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Operating Temperature - Junction: -65°C ~ 125°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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APT100DL60BG |
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Microsemi Corporation |
Description: DIODE GEN PURP 600V 100A TO247 Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A Current - Average Rectified (Io): 100A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tube Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247 Package / Case: TO-247-2 Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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JAN1N5550 |
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Microsemi Corporation |
Description: DIODE GEN PURP 200V 3A AXIAL Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 200V Mounting Type: Through Hole Package / Case: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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1N5811TR |
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Microsemi Corporation |
Description: DIODE GEN PURP 150V 6A AXIAL Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Mounting Type: Through Hole Package / Case: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Base Part Number: 1N5811 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Microsemi Corporation |
Description: DIODE GEN PURP 150V 6A AXIAL Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Mounting Type: Through Hole Package / Case: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Base Part Number: 1N5811 |
auf Bestellung 322 Stücke Lieferzeit 21-28 Tag (e) |
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| 1N6620US |
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Microsemi Corporation |
Description: DIODE GEN PURP 220V 1.2A A-MELF Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: A-MELF Package / Case: SQ-MELF, A Mounting Type: Surface Mount Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Reverse Leakage @ Vr: 500nA @ 220V Reverse Recovery Time (trr): 30ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Current - Average Rectified (Io): 1.2A Voltage - DC Reverse (Vr) (Max): 220V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 1N5620US |
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Microsemi Corporation |
Description: DIODE GEN PURP 800V 1A D5A Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 800V Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 1N5415US |
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Microsemi Corporation |
Description: DIODE GEN PURP 50V 3A D5B Supplier Device Package: D-5B Package / Case: E-MELF Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 1µA @ 50V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 50V Part Status: Discontinued at Digi-Key Diode Type: Standard Packaging: Bulk Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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1N5550US |
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Microsemi Corporation |
Description: DIODE GEN PURP 200V 3A D5B Current - Reverse Leakage @ Vr: 1µA @ 200V Reverse Recovery Time (trr): 2µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Part Status: Active Packaging: Bulk Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-5B Package / Case: SQ-MELF, B Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| 1N5621US |
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Microsemi Corporation |
Description: DIODE GEN PURP 800V 1A D5A Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: 20pF @ 12V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 1N5622US |
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Microsemi Corporation |
Description: DIODE GEN PURP 1KV 1A D5A Diode Type: Standard Part Status: Active Packaging: Bulk Operating Temperature - Junction: -65°C ~ 200°C Supplier Device Package: D-5A Package / Case: SQ-MELF, A Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 500nA @ 1000V Reverse Recovery Time (trr): 2µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N4944 |
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Microsemi Corporation |
Description: DIODE GEN PURP 400V 1A AXIAL Package / Case: A, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 1µA @ 400V Reverse Recovery Time (trr): 150ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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JANTX1N3957 |
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Microsemi Corporation |
Description: DIODE GEN PURP 1KV 1A Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Package / Case: A, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 1µA @ 1000V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Packaging: Bulk |
auf Bestellung 23 Stücke Lieferzeit 21-28 Tag (e) |
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| 1N5623US |
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Microsemi Corporation |
Description: DIODE GEN PURP 1KV 1A D5A Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 500nA @ 1000V Capacitance @ Vr, F: 15pF @ 12V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 1N5419US |
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Microsemi Corporation |
Description: DIODE GEN PURP 500V 3A D5B Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-5B Package / Case: E-MELF Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 1µA @ 500V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Current - Average Rectified (Io): 3A Voltage - DC Reverse (Vr) (Max): 500V Packaging: Bulk Part Status: Active Diode Type: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
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JANTX1N4249 |
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Microsemi Corporation |
Description: DIODE GEN PURP 1KV 1A AXIAL Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Package / Case: A, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 1µA @ 1000V Reverse Recovery Time (trr): 5µs Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| JANTX2N6762 |
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Microsemi Corporation |
Description: MOSFET N-CH TO-204AA TO-3 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4W (Ta), 75W (Tc) Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3) Packaging: Bulk Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1700 Stücke - Preis und Lieferfrist anzeigen
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APT20M38BVRG |
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Microsemi Corporation |
Description: MOSFET N-CH 200V 67A TO-247 Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Package / Case: TO-247-3 Supplier Device Package: TO-247 [B] Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 370W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| JANTX2N6760 |
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Microsemi Corporation |
Description: MOSFET N-CH TO-204AA TO-3 Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drain to Source Voltage (Vdss): 400V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 572 Stücke - Preis und Lieferfrist anzeigen
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| JAN2N6766 |
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Microsemi Corporation |
Description: MOSFET N-CH TO-204AE TO-3 Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Package / Case: TO-204AE Supplier Device Package: TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4W (Ta), 150W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
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| APT97N65LC6 |
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Microsemi Corporation |
Description: MOSFET N-CH 650V 97A TO-264 Packaging: Tube Part Status: Active Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 48.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 2.96mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 25V Power Dissipation (Max): 862W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX2N6766 |
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Microsemi Corporation |
Description: MOSFET N-CH TO-204AE TO-3 Package / Case: TO-204AE Supplier Device Package: TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs (Max): ±20V Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5416 Stücke - Preis und Lieferfrist anzeigen
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APT20M38BVFRG |
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Microsemi Corporation |
Description: MOSFET N-CH 200V 67A TO-247 Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V Package / Case: TO-247-3 Supplier Device Package: TO-247 [B] Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 370W (Tc) Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| JANTXV2N6798 | Microsemi Corporation |
Description: MOSFET N-CH Package / Case: TO-205AF Metal Can Supplier Device Package: TO-205AF (TO-39) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APT56F50L |
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Microsemi Corporation |
Description: MOSFET N-CH 500V 56A TO-264 Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Power Dissipation (Max): 780W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| APT47N65SCS3G | Microsemi Corporation |
Description: MOSFET N-CH 650V 47A TO-247 Packaging: Bulk Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APT47N65BC3G |
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Microsemi Corporation |
Description: MOSFET N-CH 650V 47A TO247 Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drain to Source Voltage (Vdss): 650V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Package / Case: TO-247-3 Supplier Device Package: TO-247 [B] Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 417W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| JANTXV2N6762 |
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Microsemi Corporation |
Description: MOSFET N-CH Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Bulk Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4W (Ta), 75W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
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| JANTXV2N6760 |
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Microsemi Corporation |
Description: MOSFET N-CH Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drain to Source Voltage (Vdss): 400V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Vgs (Max): ±20V Power Dissipation (Max): 4W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3 Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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APT20M22B2VRG |
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Microsemi Corporation |
Description: MOSFET N-CH 200V 100A T-MAX Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX™ [B2] Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 520W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V FET Type: N-Channel Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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APT20M22LVRG |
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Microsemi Corporation |
Description: MOSFET N-CH 200V 100A TO-264 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 520W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L] FET Type: N-Channel Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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APT20M22B2VFRG |
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Microsemi Corporation |
Description: MOSFET N-CH 200V 100A T-MAX Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Tube Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX™ [B2] Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 520W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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APT20M22LVFRG |
|
Microsemi Corporation |
Description: MOSFET N-CH 200V 100A TO-264 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 520W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V Vgs (Max): ±30V Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L] Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| 2N6782U |
|
Microsemi Corporation |
Description: MOSFET N-CH 100V 18LCC Packaging: Bulk Part Status: Obsolete Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Power Dissipation (Max): 800mW (Ta), 15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV2N6766 |
|
Microsemi Corporation |
Description: MOSFET N-CH Vgs (Max): ±20V Package / Case: TO-204AE Supplier Device Package: TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4W (Ta), 150W (Tc) Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 93 Stücke - Preis und Lieferfrist anzeigen
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| JAN2N6901 |
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Microsemi Corporation |
Description: MOSFET N-CH 100V 1.69A TO205AF Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Package / Case: TO-205AF Metal Can Supplier Device Package: TO-205AF (TO-39) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 8.33W (Tc) Vgs (Max): ±10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V Drive Voltage (Max Rds On, Min Rds On): 5V Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
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| JANTXV2N6782 |
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Microsemi Corporation |
Description: MOSFET N-CH 100V 3.5A Package / Case: TO-205AF Metal Can Supplier Device Package: TO-205AF (TO-39) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 800mW (Ta), 15W (Tc) Part Status: Obsolete Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 17000 Stücke - Preis und Lieferfrist anzeigen
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| 2N6849U |
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Microsemi Corporation |
Description: MOSFET P-CH 100V 6.5A 18ULCC Packaging: Bulk Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N6796U |
|
Microsemi Corporation |
Description: MOSFET N-CH 100V 18LCC Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250mA Gate Charge (Qg) (Max) @ Vgs: 6.34nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N6800U |
|
Microsemi Corporation |
Description: MOSFET N-CH 400V 18LCC Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.75nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N6798U |
|
Microsemi Corporation |
Description: MOSFET N-CH 200V 18LCC Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.29nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N6802U |
|
Microsemi Corporation |
Description: MOSFET N-CH 500V 18LCC Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.46nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 800mW (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX2N6901 |
|
Microsemi Corporation |
Description: MOSFET N-CH 100V 1.69A TO205AF Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Package / Case: TO-205AF Metal Can Supplier Device Package: TO-205AF (TO-39) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 8.33W (Tc) Vgs (Max): ±10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V Drive Voltage (Max Rds On, Min Rds On): 5V Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
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| JAN2N6804 |
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Microsemi Corporation |
Description: MOSFET P-CH 100V 11A TO-3 Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Bulk Power Dissipation (Max): 4W (Ta), 75W (Tc) Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV2N6804 |
|
Microsemi Corporation |
Description: MOSFET P-CH 100V 11A Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4W (Ta), 75W (Tc) FET Type: P-Channel Part Status: Obsolete Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) Supplier Device Package: TO-204AA (TO-3) Package / Case: TO-204AA, TO-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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| JAN2N6782U |
|
Microsemi Corporation |
Description: MOSFET N-CH 18-LCC Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Bulk Package / Case: 18-CLCC Supplier Device Package: 18-ULCC (9.14x7.49) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 800mW (Ta), 15W (Tc) Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV2N6901 |
|
Microsemi Corporation |
Description: MOSFET N-CH 100V 1.69A TO205AF Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 8.33W (Tc) Vgs (Max): ±10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V Drive Voltage (Max Rds On, Min Rds On): 5V Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Package / Case: TO-205AF Metal Can Supplier Device Package: TO-205AF (TO-39) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN2N6798U |
|
Microsemi Corporation |
Description: MOSFET N-CH 18-LCC Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Package / Case: 18-CLCC Supplier Device Package: 18-ULCC (9.14x7.49) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX2N6798U |
|
Microsemi Corporation |
Description: MOSFET N-CH Package / Case: 18-CLCC Supplier Device Package: 18-ULCC (9.14x7.49) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV2N6782U |
|
Microsemi Corporation |
Description: MOSFET N-CH 100V 3.5A Package / Case: 18-CLCC Supplier Device Package: 18-ULCC (9.14x7.49) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 800mW (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Bulk Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV2N6798U |
|
Microsemi Corporation |
Description: MOSFET N-CH Package / Case: 18-CLCC Supplier Device Package: 18-ULCC (9.14x7.49) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 800mW (Ta), 25W (Tc) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N7335 |
|
Microsemi Corporation |
Description: MOSFET 4P-CH 100V 0.75A MO-036AB FET Feature: Standard FET Type: 4 P-Channel Part Status: Obsolete Packaging: Bulk Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N7224U |
|
Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO267AB Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N7225U |
|
Microsemi Corporation |
Description: MOSFET N-CH 200V 27.4A TO267AB Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N7228 |
|
Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO254AA Supplier Device Package: TO-254AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation Package / Case: TO-254-3, TO-254AA (Straight Leads) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N7227U |
|
Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO267AB Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N7227 |
|
Microsemi Corporation |
Description: MOSFET N-CH 400V 14A TO254AA Package / Case: TO-254-3, TO-254AA (Straight Leads) Supplier Device Package: TO-254AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4W (Ta), 150W (Tc) Packaging: Bulk Manufacturer: Microsemi Corporation Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drain to Source Voltage (Vdss): 400V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N7228U |
|
Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO267AB Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 4W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| A54SX32-1CQ208M |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Part Status: Active
Packaging: Tray
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Part Status: Active
Packaging: Tray
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
| A14100A-1CQ256M |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 228 I/O 256CQFP
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TC)
Package / Case: 256-BFCQFP with Tie Bar
Supplier Device Package: 256-CQFP (75x75)
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 228 I/O 256CQFP
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TC)
Package / Case: 256-BFCQFP with Tie Bar
Supplier Device Package: 256-CQFP (75x75)
Base Part Number: A14100
| A1280A-1CQ172B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 140 I/O 172CQFP
Supplier Device Package: 172-CQFP (63.37x63.37)
Package / Case: 172-CQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Number of Gates: 8000
Number of I/O: 140
Number of LABs/CLBs: 1232
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 140 I/O 172CQFP
Supplier Device Package: 172-CQFP (63.37x63.37)
Package / Case: 172-CQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Number of Gates: 8000
Number of I/O: 140
Number of LABs/CLBs: 1232
| A42MX36-CQ208B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 176 I/O 208CQFP
Packaging: Tray
Base Part Number: A42MX36
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Number of Gates: 54000
Number of I/O: 176
Total RAM Bits: 2560
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 176 I/O 208CQFP
Packaging: Tray
Base Part Number: A42MX36
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Number of Gates: 54000
Number of I/O: 176
Total RAM Bits: 2560
Part Status: Active
| A54SX72A-CQ208M |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 171 I/O 208CQFP
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 171 I/O 208CQFP
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
| AX2000-1FG1152M |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 684 I/O 1152FBGA
Base Part Number: AX2000
Supplier Device Package: 1152-FPBGA (35x35)
Package / Case: 1152-BGA
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Voltage - Supply: 1.425V ~ 1.575V
Number of Gates: 2000000
Number of I/O: 684
Total RAM Bits: 294912
Number of LABs/CLBs: 32256
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 684 I/O 1152FBGA
Base Part Number: AX2000
Supplier Device Package: 1152-FPBGA (35x35)
Package / Case: 1152-BGA
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Voltage - Supply: 1.425V ~ 1.575V
Number of Gates: 2000000
Number of I/O: 684
Total RAM Bits: 294912
Number of LABs/CLBs: 32256
Part Status: Active
Packaging: Tray
| A14100A-PG257B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 228 I/O 257CPGA
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 257-BCPGA
Supplier Device Package: 257-CPGA (50x50)
Manufacturer: Microsemi Corporation
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 228 I/O 257CPGA
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 257-BCPGA
Supplier Device Package: 257-CPGA (50x50)
Manufacturer: Microsemi Corporation
Base Part Number: A14100
| A54SX32A-CQ208B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Active
Packaging: Tray
| A54SX72A-CQ256M |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 213 I/O 256CQFP
Base Part Number: A54SX72A
Supplier Device Package: 256-CQFP (75x75)
Package / Case: 256-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 213
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 213 I/O 256CQFP
Base Part Number: A54SX72A
Supplier Device Package: 256-CQFP (75x75)
Package / Case: 256-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 213
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
| A42MX36-1CQ208B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 176 I/O 208CQFP
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Number of Gates: 54000
Number of I/O: 176
Total RAM Bits: 2560
Part Status: Active
Packaging: Tray
Base Part Number: A42MX36
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 176 I/O 208CQFP
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Number of Gates: 54000
Number of I/O: 176
Total RAM Bits: 2560
Part Status: Active
Packaging: Tray
Base Part Number: A42MX36
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
| A54SX32-CQ208B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 174 I/O 208CQFP
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Not For New Designs
Packaging: Tray
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 174 I/O 208CQFP
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Not For New Designs
Packaging: Tray
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
| A54SX72A-1CQ208M |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 171 I/O 208CQFP
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 171 I/O 208CQFP
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
| APA600-CQ208B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 158 I/O 208CQFP
Number of Gates: 600000
Number of I/O: 158
Total RAM Bits: 129024
Part Status: Active
Packaging: Tray
Base Part Number: APA600
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 158 I/O 208CQFP
Number of Gates: 600000
Number of I/O: 158
Total RAM Bits: 129024
Part Status: Active
Packaging: Tray
Base Part Number: APA600
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
| A14100A-CQ256B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 228 I/O 256CQFP
Supplier Device Package: 256-CQFP (75x75)
Package / Case: 256-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Number of Gates: 10000
Number of I/O: 228
Number of LABs/CLBs: 264
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 228 I/O 256CQFP
Supplier Device Package: 256-CQFP (75x75)
Package / Case: 256-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Number of Gates: 10000
Number of I/O: 228
Number of LABs/CLBs: 264
| A14100A-1PG257B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 228 I/O 257CPGA
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 257-BCPGA
Supplier Device Package: 257-CPGA (50x50)
Manufacturer: Microsemi Corporation
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 228 I/O 257CPGA
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 257-BCPGA
Supplier Device Package: 257-CPGA (50x50)
Manufacturer: Microsemi Corporation
Base Part Number: A14100
| A54SX32A-1CQ208B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 174 I/O 208CQFP
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Active
Packaging: Tray
Base Part Number: A54SX32A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 48000
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 174 I/O 208CQFP
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Active
Packaging: Tray
Base Part Number: A54SX32A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 48000
| A54SX32-1CQ208B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Not For New Designs
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Not For New Designs
Packaging: Tray
| A14100A-1CQ256B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 228 I/O 256CQFP
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 256-BFCQFP with Tie Bar
Supplier Device Package: 256-CQFP (75x75)
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 228 I/O 256CQFP
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 256-BFCQFP with Tie Bar
Supplier Device Package: 256-CQFP (75x75)
Base Part Number: A14100
| A54SX72A-CQ208B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 171 I/O 208CQFP
Part Status: Active
Packaging: Tray
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 171 I/O 208CQFP
Part Status: Active
Packaging: Tray
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
| A54SX72A-1CQ208B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 171 I/O 208CQFP
Packaging: Tray
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 171 I/O 208CQFP
Packaging: Tray
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
| APA1000-CQ208M |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 158 I/O 208CQFP
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
Number of Gates: 1000000
Number of I/O: 158
Total RAM Bits: 202752
Part Status: Active
Packaging: Tray
Base Part Number: APA1000
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 158 I/O 208CQFP
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
Number of Gates: 1000000
Number of I/O: 158
Total RAM Bits: 202752
Part Status: Active
Packaging: Tray
Base Part Number: APA1000
| APA1000-CQ208B |
|
Hersteller: Microsemi Corporation
Description: IC FPGA 158 I/O 208CQFP
Base Part Number: APA1000
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
Number of Gates: 1000000
Number of I/O: 158
Total RAM Bits: 202752
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC FPGA 158 I/O 208CQFP
Base Part Number: APA1000
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
Number of Gates: 1000000
Number of I/O: 158
Total RAM Bits: 202752
Part Status: Active
Packaging: Tray
| JAN1N3611 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 300V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 300V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| CDLL483B |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 80V 200MA DO213AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 80V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 80V 200MA DO213AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 80V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| DSB5818 |
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
| CDLL485B |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 180V 200MA DO213
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Part Status: Active
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 180V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 180V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 180V 200MA DO213
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Part Status: Active
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 180V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 180V
Diode Type: Standard
| 1N3957 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
| 1N5614 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 1A AXIAL
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500nA @ 200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
auf Bestellung 223 Stücke Description: DIODE GEN PURP 200V 1A AXIAL
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500nA @ 200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Lieferzeit 21-28 Tag (e)
| 1N5616 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 1A AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500nA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 1710 Stücke Description: DIODE GEN PURP 400V 1A AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500nA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Lieferzeit 21-28 Tag (e)
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
| 1N4944 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 1A AXIAL
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A AXIAL
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
| 1N4946 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 250ns
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 250ns
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
| 1N4249 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
auf Bestellung 3161 Stücke - Preis und Lieferfrist anzeigen
| 1N6620 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 220V 1.2A AXIAL
Mounting Type: Through Hole
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 220V 1.2A AXIAL
Mounting Type: Through Hole
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| 1N5190 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 3A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 3A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 600V
| UPR60/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 2A POWERMITE
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Base Part Number: UPR60
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Tape & Reel (TR)
Supplier Device Package: Powermite
Package / Case: DO-216AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A POWERMITE
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Base Part Number: UPR60
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Tape & Reel (TR)
Supplier Device Package: Powermite
Package / Case: DO-216AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Current - Average Rectified (Io): 2A
| 1N5623 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 1A
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 1A
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| JAN1N3957 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 300V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 300V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
| UPR60/TR7 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 2A POWERMITE
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: UPR60
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Powermite
Package / Case: DO-216AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 30ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A POWERMITE
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: UPR60
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Powermite
Package / Case: DO-216AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 30ns
| CDLL486B |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 250V 200MA DO213
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 250V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 250V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 250V 200MA DO213
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 250V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 250V
Diode Type: Standard
| CDLL5818 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO213AB
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 100µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 1A DO213AB
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 100µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
| JAN1N4249 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| JAN1N4946 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Packaging: Bulk
Part Status: Active
| 1N5805 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 1A AXIAL
Current - Reverse Leakage @ Vr: 1µA @ 125V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 125V 1A AXIAL
Current - Reverse Leakage @ Vr: 1µA @ 125V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 125°C
| APT100DL60BG |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 100A TO247
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Package / Case: TO-247-2
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 100A TO247
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Package / Case: TO-247-2
Mounting Type: Through Hole
| JAN1N5550 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| 1N5811TR |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 6A AXIAL
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5811
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 6A AXIAL
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5811
auf Bestellung 322 Stücke - Preis und Lieferfrist anzeigen
| 1N5811TR |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 6A AXIAL
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5811
auf Bestellung 322 Stücke Description: DIODE GEN PURP 150V 6A AXIAL
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5811
Lieferzeit 21-28 Tag (e)
| 1N6620US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 220V 1.2A A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 220V 1.2A A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| 1N5620US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 800V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 800V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
| 1N5415US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 50V 3A D5B
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 3A D5B
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
| 1N5550US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 3A D5B
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 3A D5B
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
| 1N5621US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: 20pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: 20pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
| 1N5622US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A D5A
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A D5A
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
| JANTX1N4944 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 1A AXIAL
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1A AXIAL
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| JANTX1N3957 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
auf Bestellung 23 Stücke Description: DIODE GEN PURP 1KV 1A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
| 1N5623US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
| 1N5419US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 500V 3A D5B
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 500V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 500V
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 500V 3A D5B
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 500V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 500V
Packaging: Bulk
Part Status: Active
Diode Type: Standard
| JANTX1N4249 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| JANTX2N6762 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH TO-204AA TO-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Packaging: Bulk
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH TO-204AA TO-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Packaging: Bulk
Mounting Type: Through Hole
auf Bestellung 1700 Stücke - Preis und Lieferfrist anzeigen
| APT20M38BVRG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 67A TO-247
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 370W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 67A TO-247
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 370W (Tc)
| JANTX2N6760 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH TO-204AA TO-3
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH TO-204AA TO-3
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 572 Stücke - Preis und Lieferfrist anzeigen
| JAN2N6766 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH TO-204AE TO-3
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH TO-204AE TO-3
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
| APT97N65LC6 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 97A TO-264
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 41mOhm @ 48.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 25V
Power Dissipation (Max): 862W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 97A TO-264
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 41mOhm @ 48.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 25V
Power Dissipation (Max): 862W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA
| JANTX2N6766 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH TO-204AE TO-3
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH TO-204AE TO-3
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
auf Bestellung 5416 Stücke - Preis und Lieferfrist anzeigen
| APT20M38BVFRG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 67A TO-247
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 370W (Tc)
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 67A TO-247
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 370W (Tc)
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
| JANTXV2N6798 |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
| APT56F50L |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 56A TO-264
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
Power Dissipation (Max): 780W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 56A TO-264
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
Power Dissipation (Max): 780W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA
| APT47N65SCS3G |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 47A TO-247
Packaging: Bulk
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Power Dissipation (Max): 417W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 47A TO-247
Packaging: Bulk
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Power Dissipation (Max): 417W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
| APT47N65BC3G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 47A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 47A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
| JANTXV2N6762 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
| JANTXV2N6760 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| APT20M22B2VRG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 100A T-MAX
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 100A T-MAX
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
| APT20M22LVRG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 100A TO-264
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 100A TO-264
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
FET Type: N-Channel
Part Status: Active
Packaging: Tube
| APT20M22B2VFRG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
| APT20M22LVFRG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 100A TO-264
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 100A TO-264
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
| 2N6782U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 18LCC
Packaging: Bulk
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 18LCC
Packaging: Bulk
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
| JANTXV2N6766 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Vgs (Max): ±20V
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH
Vgs (Max): ±20V
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 93 Stücke - Preis und Lieferfrist anzeigen
| JAN2N6901 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 1.69A TO205AF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 1.69A TO205AF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
| JANTXV2N6782 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 3.5A
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 3.5A
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
auf Bestellung 17000 Stücke - Preis und Lieferfrist anzeigen
| 2N6849U |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A 18ULCC
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 6.5A 18ULCC
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
| 2N6796U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs: 6.34nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs: 6.34nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
| 2N6800U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.75nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.75nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
| 2N6798U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 18LCC
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.29nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 18LCC
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.29nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
| 2N6802U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.46nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.46nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
| JANTX2N6901 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 1.69A TO205AF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 1.69A TO205AF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
| JAN2N6804 |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 11A TO-3
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 11A TO-3
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
| JANTXV2N6804 |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 11A
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 11A
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| JAN2N6782U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 18-LCC
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 18-LCC
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
| JANTXV2N6901 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 1.69A TO205AF
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 1.69A TO205AF
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
| JAN2N6798U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 18-LCC
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 18-LCC
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
| JANTX2N6798U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
| JANTXV2N6782U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 3.5A
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 3.5A
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
| JANTXV2N6798U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
| 2N7335 |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4P-CH 100V 0.75A MO-036AB
FET Feature: Standard
FET Type: 4 P-Channel
Part Status: Obsolete
Packaging: Bulk
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: MO-036AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4P-CH 100V 0.75A MO-036AB
FET Feature: Standard
FET Type: 4 P-Channel
Part Status: Obsolete
Packaging: Bulk
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: MO-036AB
| 2N7224U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
| 2N7225U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 27.4A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 27.4A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
| 2N7228 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 12A TO254AA
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
| 2N7227U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 14A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
| 2N7227 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Packaging: Bulk
Manufacturer: Microsemi Corporation
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 14A TO254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Packaging: Bulk
Manufacturer: Microsemi Corporation
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
| 2N7228U |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 12A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
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