Die Produkte microsemi corporation

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A54SX32-1CQ208M index.php?option=com_docman&task=doc_download&gid=130665 Microsemi Corporation Description: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Part Status: Active
Packaging: Tray
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A14100A-1CQ256M index.php?option=com_docman&task=doc_download&gid=130668 Microsemi Corporation Description: IC FPGA 228 I/O 256CQFP
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TC)
Package / Case: 256-BFCQFP with Tie Bar
Supplier Device Package: 256-CQFP (75x75)
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A1280A-1CQ172B index.php?option=com_docman&task=doc_download&gid=130667 Microsemi Corporation Description: IC FPGA 140 I/O 172CQFP
Supplier Device Package: 172-CQFP (63.37x63.37)
Package / Case: 172-CQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Number of Gates: 8000
Number of I/O: 140
Number of LABs/CLBs: 1232
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A42MX36-CQ208B A42MX36-CQ208B index.php?option=com_docman&task=doc_download&gid=130699 Microsemi Corporation Description: IC FPGA 176 I/O 208CQFP
Packaging: Tray
Base Part Number: A42MX36
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Number of Gates: 54000
Number of I/O: 176
Total RAM Bits: 2560
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX72A-CQ208M A54SX72A-CQ208M index.php?option=com_docman&task=doc_download&gid=130722 Microsemi Corporation Description: IC FPGA 171 I/O 208CQFP
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
AX2000-1FG1152M index.php?option=com_docman&task=doc_download&gid=130669 Microsemi Corporation Description: IC FPGA 684 I/O 1152FBGA
Base Part Number: AX2000
Supplier Device Package: 1152-FPBGA (35x35)
Package / Case: 1152-BGA
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Voltage - Supply: 1.425V ~ 1.575V
Number of Gates: 2000000
Number of I/O: 684
Total RAM Bits: 294912
Number of LABs/CLBs: 32256
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A14100A-PG257B index.php?option=com_docman&task=doc_download&gid=130668 Microsemi Corporation Description: IC FPGA 228 I/O 257CPGA
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 257-BCPGA
Supplier Device Package: 257-CPGA (50x50)
Manufacturer: Microsemi Corporation
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX32A-CQ208B A54SX32A-CQ208B index.php?option=com_docman&task=doc_download&gid=130722 Microsemi Corporation Description: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX72A-CQ256M A54SX72A-CQ256M index.php?option=com_docman&task=doc_download&gid=130722 Microsemi Corporation Description: IC FPGA 213 I/O 256CQFP
Base Part Number: A54SX72A
Supplier Device Package: 256-CQFP (75x75)
Package / Case: 256-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 213
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A42MX36-1CQ208B A42MX36-1CQ208B index.php?option=com_docman&task=doc_download&gid=130699 Microsemi Corporation Description: IC FPGA 176 I/O 208CQFP
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Number of Gates: 54000
Number of I/O: 176
Total RAM Bits: 2560
Part Status: Active
Packaging: Tray
Base Part Number: A42MX36
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX32-CQ208B index.php?option=com_docman&task=doc_download&gid=130665 Microsemi Corporation Description: IC FPGA 174 I/O 208CQFP
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Not For New Designs
Packaging: Tray
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX72A-1CQ208M A54SX72A-1CQ208M index.php?option=com_docman&task=doc_download&gid=130722 Microsemi Corporation Description: IC FPGA 171 I/O 208CQFP
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APA600-CQ208B APA600-CQ208B index.php?option=com_docman&task=doc_download&gid=130707 Microsemi Corporation Description: IC FPGA 158 I/O 208CQFP
Number of Gates: 600000
Number of I/O: 158
Total RAM Bits: 129024
Part Status: Active
Packaging: Tray
Base Part Number: APA600
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A14100A-CQ256B index.php?option=com_docman&task=doc_download&gid=130668 Microsemi Corporation Description: IC FPGA 228 I/O 256CQFP
Supplier Device Package: 256-CQFP (75x75)
Package / Case: 256-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Number of Gates: 10000
Number of I/O: 228
Number of LABs/CLBs: 264
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A14100A-1PG257B index.php?option=com_docman&task=doc_download&gid=130668 Microsemi Corporation Description: IC FPGA 228 I/O 257CPGA
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 257-BCPGA
Supplier Device Package: 257-CPGA (50x50)
Manufacturer: Microsemi Corporation
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX32A-1CQ208B A54SX32A-1CQ208B index.php?option=com_docman&task=doc_download&gid=130722 Microsemi Corporation Description: IC FPGA 174 I/O 208CQFP
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Active
Packaging: Tray
Base Part Number: A54SX32A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 48000
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX32-1CQ208B index.php?option=com_docman&task=doc_download&gid=130665 Microsemi Corporation Description: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Not For New Designs
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A14100A-1CQ256B index.php?option=com_docman&task=doc_download&gid=130668 Microsemi Corporation Description: IC FPGA 228 I/O 256CQFP
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 256-BFCQFP with Tie Bar
Supplier Device Package: 256-CQFP (75x75)
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX72A-CQ208B A54SX72A-CQ208B index.php?option=com_docman&task=doc_download&gid=130722 Microsemi Corporation Description: IC FPGA 171 I/O 208CQFP
Part Status: Active
Packaging: Tray
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX72A-1CQ208B A54SX72A-1CQ208B index.php?option=com_docman&task=doc_download&gid=130722 Microsemi Corporation Description: IC FPGA 171 I/O 208CQFP
Packaging: Tray
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APA1000-CQ208M APA1000-CQ208M index.php?option=com_docman&task=doc_download&gid=131796 Microsemi Corporation Description: IC FPGA 158 I/O 208CQFP
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
Number of Gates: 1000000
Number of I/O: 158
Total RAM Bits: 202752
Part Status: Active
Packaging: Tray
Base Part Number: APA1000
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APA1000-CQ208B APA1000-CQ208B index.php?option=com_docman&task=doc_download&gid=130707 Microsemi Corporation Description: IC FPGA 158 I/O 208CQFP
Base Part Number: APA1000
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
Number of Gates: 1000000
Number of I/O: 158
Total RAM Bits: 202752
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3611 JAN1N3611 123512-lds-0190-datasheet Microsemi Corporation Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 300V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL483B CDLL483B 8391-cdll483b-485-486-datasheet Microsemi Corporation Description: DIODE GEN PURP 80V 200MA DO213AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 80V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DSB5818 DSB5818 Microsemi Corporation Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL485B CDLL485B 8391-cdll483b-485-486-datasheet Microsemi Corporation Description: DIODE GEN PURP 180V 200MA DO213
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Part Status: Active
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 180V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 180V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N3957 1N3957 123512-lds-0190-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5614 1N5614 11061-sd46a-datasheet Microsemi Corporation Description: DIODE GEN PURP 200V 1A AXIAL
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500nA @ 200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
auf Bestellung 223 Stücke
Lieferzeit 21-28 Tag (e)
1N5616 1N5616 11061-sd46a-datasheet Microsemi Corporation Description: DIODE GEN PURP 400V 1A AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500nA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 1710 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
1N4944 1N4944 129281-lds-0295-datasheet Microsemi Corporation Description: DIODE GEN PURP 400V 1A AXIAL
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4946 1N4946 129281-lds-0295-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 1A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 250ns
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4249 1N4249 123513-lds-0191-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3161 Stücke - Preis und Lieferfrist anzeigen
1N6620 1N6620 10972-sa7-55-datasheet Microsemi Corporation Description: DIODE GEN PURP 220V 1.2A AXIAL
Mounting Type: Through Hole
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5190 1N5190 11517-lds-0216-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 3A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UPR60/TR13 UPR60/TR13 UPR60.pdf Microsemi Corporation Description: DIODE GEN PURP 600V 2A POWERMITE
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Base Part Number: UPR60
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Tape & Reel (TR)
Supplier Device Package: Powermite
Package / Case: DO-216AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5623 1N5623 10968-sa7-47-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 1A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 1A
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3957 JAN1N3957 123512-lds-0190-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 300V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UPR60/TR7 UPR60/TR7 UPR60.pdf Microsemi Corporation Description: DIODE GEN PURP 600V 2A POWERMITE
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: UPR60
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Powermite
Package / Case: DO-216AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 30ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL486B CDLL486B 8391-cdll483b-485-486-datasheet Microsemi Corporation Description: DIODE GEN PURP 250V 200MA DO213
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 250V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 250V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL5818 CDLL5818 131895-lds-0301-1-datasheet Microsemi Corporation Description: DIODE SCHOTTKY 30V 1A DO213AB
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 100µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4249 JAN1N4249 123513-lds-0191-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4946 JAN1N4946 129281-lds-0295-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5805 1N5805 11055-sd40a-datasheet Microsemi Corporation Description: DIODE GEN PURP 125V 1A AXIAL
Current - Reverse Leakage @ Vr: 1µA @ 125V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT100DL60BG APT100DL60BG 6556-apt100dl60bg-apt100dl60sg-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 100A TO247
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Package / Case: TO-247-2
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5550 JAN1N5550 11519-lds-0230-datasheet Microsemi Corporation Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5811TR 1N5811TR 123509-lds-0168-datasheet Microsemi Corporation Description: DIODE GEN PURP 150V 6A AXIAL
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5811
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Microsemi Corporation Description: DIODE GEN PURP 150V 6A AXIAL
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5811
auf Bestellung 322 Stücke
Lieferzeit 21-28 Tag (e)
1N6620US 11068-sd52a-datasheet Microsemi Corporation Description: DIODE GEN PURP 220V 1.2A A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5620US 10967-sa7-45-datasheet Microsemi Corporation Description: DIODE GEN PURP 800V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 800V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5415US 11075-lds-0231-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 50V 3A D5B
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5550US 1N5550US 10966-sa7-43-datasheet Microsemi Corporation Description: DIODE GEN PURP 200V 3A D5B
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5621US 11062-sd47a-datasheet Microsemi Corporation Description: DIODE GEN PURP 800V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: 20pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5622US 10967-sa7-45-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 1A D5A
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4944 129281-lds-0295-datasheet Microsemi Corporation Description: DIODE GEN PURP 400V 1A AXIAL
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3957 JANTX1N3957 123512-lds-0190-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 1A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
auf Bestellung 23 Stücke
Lieferzeit 21-28 Tag (e)
1N5623US 11062-sd47a-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5419US 11075-lds-0231-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 500V 3A D5B
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 500V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 500V
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4249 JANTX1N4249 123513-lds-0191-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6762 8925-lds-0111-datasheet Microsemi Corporation Description: MOSFET N-CH TO-204AA TO-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Packaging: Bulk
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1700 Stücke - Preis und Lieferfrist anzeigen
APT20M38BVRG APT20M38BVRG 5960-apt20m38bvr-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 67A TO-247
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 370W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6760 8925-lds-0111-datasheet Microsemi Corporation Description: MOSFET N-CH TO-204AA TO-3
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 572 Stücke - Preis und Lieferfrist anzeigen
JAN2N6766 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH TO-204AE TO-3
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
APT97N65LC6 123473-apt97n65b2c6-apt97n65lc6-datasheet Microsemi Corporation Description: MOSFET N-CH 650V 97A TO-264
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 41mOhm @ 48.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 25V
Power Dissipation (Max): 862W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6766 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH TO-204AE TO-3
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5416 Stücke - Preis und Lieferfrist anzeigen
APT20M38BVFRG APT20M38BVFRG index.php?option=com_docman&task=doc_download&gid=14813 Microsemi Corporation Description: MOSFET N-CH 200V 67A TO-247
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 370W (Tc)
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6798 Microsemi Corporation Description: MOSFET N-CH
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT56F50L APT56F50L 7147-apt56f50b2-apt56f50l-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 56A TO-264
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
Power Dissipation (Max): 780W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT47N65SCS3G Microsemi Corporation Description: MOSFET N-CH 650V 47A TO-247
Packaging: Bulk
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Power Dissipation (Max): 417W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT47N65BC3G APT47N65BC3G 7067-apt47n65bc3-apt47n65sc3-datasheet Microsemi Corporation Description: MOSFET N-CH 650V 47A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6762 8925-lds-0111-datasheet Microsemi Corporation Description: MOSFET N-CH
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36 Stücke - Preis und Lieferfrist anzeigen
JANTXV2N6760 8925-lds-0111-datasheet Microsemi Corporation Description: MOSFET N-CH
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
APT20M22B2VRG APT20M22B2VRG index.php?option=com_docman&task=doc_download&gid=14813 Microsemi Corporation Description: MOSFET N-CH 200V 100A T-MAX
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20M22LVRG APT20M22LVRG 5955-apt20m22lvr-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 100A TO-264
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20M22B2VFRG APT20M22B2VFRG APT20M22B2VFR.pdf Microsemi Corporation Description: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20M22LVFRG APT20M22LVFRG 6752-apt20m22lvfrg-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 100A TO-264
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6782U 125241-lds-0064-1-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 18LCC
Packaging: Bulk
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6766 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH
Vgs (Max): ±20V
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 93 Stücke - Preis und Lieferfrist anzeigen
JAN2N6901 123510-lds-0188-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 1.69A TO205AF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
JANTXV2N6782 8905-lds-0064-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 3.5A
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 17000 Stücke - Preis und Lieferfrist anzeigen
2N6849U 125287-lds-0009-1-datasheet Microsemi Corporation Description: MOSFET P-CH 100V 6.5A 18ULCC
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6796U 2N6796_798_800_802U.pdf Microsemi Corporation Description: MOSFET N-CH 100V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs: 6.34nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6800U 2N6796_798_800_802U.pdf Microsemi Corporation Description: MOSFET N-CH 400V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.75nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6798U 2N6796_798_800_802U.pdf Microsemi Corporation Description: MOSFET N-CH 200V 18LCC
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.29nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6802U 2N6796_798_800_802U.pdf Microsemi Corporation Description: MOSFET N-CH 500V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.46nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6901 123510-lds-0188-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 1.69A TO205AF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
JAN2N6804 125024-lds-0113-datasheet Microsemi Corporation Description: MOSFET P-CH 100V 11A TO-3
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6804 125024-lds-0113-datasheet Microsemi Corporation Description: MOSFET P-CH 100V 11A
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
JAN2N6782U 125241-lds-0064-1-datasheet Microsemi Corporation Description: MOSFET N-CH 18-LCC
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6901 123510-lds-0188-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 1.69A TO205AF
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6798U 2N6796_798_800_802U.pdf Microsemi Corporation Description: MOSFET N-CH 18-LCC
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6798U 2N6796_798_800_802U.pdf Microsemi Corporation Description: MOSFET N-CH
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6782U 125241-lds-0064-1-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 3.5A
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6798U 2N6796_798_800_802U.pdf Microsemi Corporation Description: MOSFET N-CH
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7335 124533-lds-0215-datasheet Microsemi Corporation Description: MOSFET 4P-CH 100V 0.75A MO-036AB
FET Feature: Standard
FET Type: 4 P-Channel
Part Status: Obsolete
Packaging: Bulk
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: MO-036AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7224U 125220-lds-0102-1-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7225U 125220-lds-0102-1-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 27.4A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7228 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 12A TO254AA
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7227U 125220-lds-0102-1-datasheet Microsemi Corporation Description: MOSFET N-CH 400V 14A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7227 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 400V 14A TO254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Packaging: Bulk
Manufacturer: Microsemi Corporation
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7228U 125220-lds-0102-1-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 12A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX32-1CQ208M index.php?option=com_docman&task=doc_download&gid=130665
Hersteller: Microsemi Corporation
Description: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Part Status: Active
Packaging: Tray
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A14100A-1CQ256M index.php?option=com_docman&task=doc_download&gid=130668
Hersteller: Microsemi Corporation
Description: IC FPGA 228 I/O 256CQFP
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TC)
Package / Case: 256-BFCQFP with Tie Bar
Supplier Device Package: 256-CQFP (75x75)
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A1280A-1CQ172B index.php?option=com_docman&task=doc_download&gid=130667
Hersteller: Microsemi Corporation
Description: IC FPGA 140 I/O 172CQFP
Supplier Device Package: 172-CQFP (63.37x63.37)
Package / Case: 172-CQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Number of Gates: 8000
Number of I/O: 140
Number of LABs/CLBs: 1232
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A42MX36-CQ208B index.php?option=com_docman&task=doc_download&gid=130699
A42MX36-CQ208B
Hersteller: Microsemi Corporation
Description: IC FPGA 176 I/O 208CQFP
Packaging: Tray
Base Part Number: A42MX36
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Number of Gates: 54000
Number of I/O: 176
Total RAM Bits: 2560
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX72A-CQ208M index.php?option=com_docman&task=doc_download&gid=130722
A54SX72A-CQ208M
Hersteller: Microsemi Corporation
Description: IC FPGA 171 I/O 208CQFP
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
AX2000-1FG1152M index.php?option=com_docman&task=doc_download&gid=130669
Hersteller: Microsemi Corporation
Description: IC FPGA 684 I/O 1152FBGA
Base Part Number: AX2000
Supplier Device Package: 1152-FPBGA (35x35)
Package / Case: 1152-BGA
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Voltage - Supply: 1.425V ~ 1.575V
Number of Gates: 2000000
Number of I/O: 684
Total RAM Bits: 294912
Number of LABs/CLBs: 32256
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A14100A-PG257B index.php?option=com_docman&task=doc_download&gid=130668
Hersteller: Microsemi Corporation
Description: IC FPGA 228 I/O 257CPGA
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 257-BCPGA
Supplier Device Package: 257-CPGA (50x50)
Manufacturer: Microsemi Corporation
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX32A-CQ208B index.php?option=com_docman&task=doc_download&gid=130722
A54SX32A-CQ208B
Hersteller: Microsemi Corporation
Description: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX72A-CQ256M index.php?option=com_docman&task=doc_download&gid=130722
A54SX72A-CQ256M
Hersteller: Microsemi Corporation
Description: IC FPGA 213 I/O 256CQFP
Base Part Number: A54SX72A
Supplier Device Package: 256-CQFP (75x75)
Package / Case: 256-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 213
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A42MX36-1CQ208B index.php?option=com_docman&task=doc_download&gid=130699
A42MX36-1CQ208B
Hersteller: Microsemi Corporation
Description: IC FPGA 176 I/O 208CQFP
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Number of Gates: 54000
Number of I/O: 176
Total RAM Bits: 2560
Part Status: Active
Packaging: Tray
Base Part Number: A42MX36
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX32-CQ208B index.php?option=com_docman&task=doc_download&gid=130665
Hersteller: Microsemi Corporation
Description: IC FPGA 174 I/O 208CQFP
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Not For New Designs
Packaging: Tray
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX72A-1CQ208M index.php?option=com_docman&task=doc_download&gid=130722
A54SX72A-1CQ208M
Hersteller: Microsemi Corporation
Description: IC FPGA 171 I/O 208CQFP
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APA600-CQ208B index.php?option=com_docman&task=doc_download&gid=130707
APA600-CQ208B
Hersteller: Microsemi Corporation
Description: IC FPGA 158 I/O 208CQFP
Number of Gates: 600000
Number of I/O: 158
Total RAM Bits: 129024
Part Status: Active
Packaging: Tray
Base Part Number: APA600
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A14100A-CQ256B index.php?option=com_docman&task=doc_download&gid=130668
Hersteller: Microsemi Corporation
Description: IC FPGA 228 I/O 256CQFP
Supplier Device Package: 256-CQFP (75x75)
Package / Case: 256-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 4.5V ~ 5.5V
Number of Gates: 10000
Number of I/O: 228
Number of LABs/CLBs: 264
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A14100A-1PG257B index.php?option=com_docman&task=doc_download&gid=130668
Hersteller: Microsemi Corporation
Description: IC FPGA 228 I/O 257CPGA
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 257-BCPGA
Supplier Device Package: 257-CPGA (50x50)
Manufacturer: Microsemi Corporation
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX32A-1CQ208B index.php?option=com_docman&task=doc_download&gid=130722
A54SX32A-1CQ208B
Hersteller: Microsemi Corporation
Description: IC FPGA 174 I/O 208CQFP
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Active
Packaging: Tray
Base Part Number: A54SX32A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 48000
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX32-1CQ208B index.php?option=com_docman&task=doc_download&gid=130665
Hersteller: Microsemi Corporation
Description: IC FPGA 174 I/O 208CQFP
Base Part Number: A54SX32
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 3V ~ 3.6V, 4.75V ~ 5.25V
Number of Gates: 48000
Number of I/O: 174
Number of LABs/CLBs: 2880
Part Status: Not For New Designs
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A14100A-1CQ256B index.php?option=com_docman&task=doc_download&gid=130668
Hersteller: Microsemi Corporation
Description: IC FPGA 228 I/O 256CQFP
Packaging: Tray
Part Status: Obsolete
Number of LABs/CLBs: 1377
Number of I/O: 228
Number of Gates: 10000
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Package / Case: 256-BFCQFP with Tie Bar
Supplier Device Package: 256-CQFP (75x75)
Base Part Number: A14100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX72A-CQ208B index.php?option=com_docman&task=doc_download&gid=130722
A54SX72A-CQ208B
Hersteller: Microsemi Corporation
Description: IC FPGA 171 I/O 208CQFP
Part Status: Active
Packaging: Tray
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
A54SX72A-1CQ208B index.php?option=com_docman&task=doc_download&gid=130722
A54SX72A-1CQ208B
Hersteller: Microsemi Corporation
Description: IC FPGA 171 I/O 208CQFP
Packaging: Tray
Base Part Number: A54SX72A
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.25V ~ 5.25V
Number of Gates: 108000
Number of I/O: 171
Number of LABs/CLBs: 6036
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APA1000-CQ208M index.php?option=com_docman&task=doc_download&gid=131796
APA1000-CQ208M
Hersteller: Microsemi Corporation
Description: IC FPGA 158 I/O 208CQFP
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
Number of Gates: 1000000
Number of I/O: 158
Total RAM Bits: 202752
Part Status: Active
Packaging: Tray
Base Part Number: APA1000
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APA1000-CQ208B index.php?option=com_docman&task=doc_download&gid=130707
APA1000-CQ208B
Hersteller: Microsemi Corporation
Description: IC FPGA 158 I/O 208CQFP
Base Part Number: APA1000
Supplier Device Package: 208-CQFP (75x75)
Package / Case: 208-BFCQFP with Tie Bar
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 2.3V ~ 2.7V
Number of Gates: 1000000
Number of I/O: 158
Total RAM Bits: 202752
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3611 123512-lds-0190-datasheet
JAN1N3611
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 300V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL483B 8391-cdll483b-485-486-datasheet
CDLL483B
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 80V 200MA DO213AA
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 80V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 80V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DSB5818
DSB5818
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Diode Type: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL485B 8391-cdll483b-485-486-datasheet
CDLL485B
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 180V 200MA DO213
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Part Status: Active
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 180V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 180V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N3957 123512-lds-0190-datasheet
1N3957
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5614 11061-sd46a-datasheet
1N5614
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 1A AXIAL
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500nA @ 200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
auf Bestellung 223 Stücke
Lieferzeit 21-28 Tag (e)
1N5616 11061-sd46a-datasheet
1N5616
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 1A AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500nA @ 400V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 1710 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
1N4944 129281-lds-0295-datasheet
1N4944
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 1A AXIAL
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4946 129281-lds-0295-datasheet
1N4946
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: Axial
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 250ns
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4249 123513-lds-0191-datasheet
1N4249
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3161 Stücke - Preis und Lieferfrist anzeigen
1N6620 10972-sa7-55-datasheet
1N6620
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 220V 1.2A AXIAL
Mounting Type: Through Hole
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5190 11517-lds-0216-datasheet
1N5190
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 3A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UPR60/TR13 UPR60.pdf
UPR60/TR13
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 2A POWERMITE
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Base Part Number: UPR60
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Tape & Reel (TR)
Supplier Device Package: Powermite
Package / Case: DO-216AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5623 10968-sa7-47-datasheet
1N5623
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Current - Average Rectified (Io): 1A
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3957 123512-lds-0190-datasheet
JAN1N3957
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 300V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
UPR60/TR7 UPR60.pdf
UPR60/TR7
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 2A POWERMITE
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: UPR60
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Powermite
Package / Case: DO-216AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 30ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL486B 8391-cdll483b-485-486-datasheet
CDLL486B
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 250V 200MA DO213
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100µA @ 250V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 250V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL5818 131895-lds-0301-1-datasheet
CDLL5818
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 30V 1A DO213AB
Supplier Device Package: DO-213AB
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 100µA @ 30V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4249 123513-lds-0191-datasheet
JAN1N4249
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4946 129281-lds-0295-datasheet
JAN1N4946
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5805 11055-sd40a-datasheet
1N5805
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 1A AXIAL
Current - Reverse Leakage @ Vr: 1µA @ 125V
Reverse Recovery Time (trr): 25ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT100DL60BG 6556-apt100dl60bg-apt100dl60sg-datasheet
APT100DL60BG
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 100A TO247
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Package / Case: TO-247-2
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5550 11519-lds-0230-datasheet
JAN1N5550
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5811TR 123509-lds-0168-datasheet
1N5811TR
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 6A AXIAL
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5811
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 322 Stücke - Preis und Lieferfrist anzeigen
1N5811TR 123509-lds-0168-datasheet
1N5811TR
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 6A AXIAL
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N5811
auf Bestellung 322 Stücke
Lieferzeit 21-28 Tag (e)
1N6620US 11068-sd52a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 220V 1.2A A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5620US 10967-sa7-45-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 800V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5415US 11075-lds-0231-1-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 50V 3A D5B
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 50V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 50V
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5550US 10966-sa7-43-datasheet
1N5550US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 3A D5B
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5621US 11062-sd47a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: 20pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5622US 10967-sa7-45-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A D5A
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4944 129281-lds-0295-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 1A AXIAL
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3957 123512-lds-0190-datasheet
JANTX1N3957
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
auf Bestellung 23 Stücke
Lieferzeit 21-28 Tag (e)
1N5623US 11062-sd47a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Capacitance @ Vr, F: 15pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5419US 11075-lds-0231-1-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 500V 3A D5B
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 500V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 500V
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4249 123513-lds-0191-datasheet
JANTX1N4249
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 5µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6762 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH TO-204AA TO-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Packaging: Bulk
Mounting Type: Through Hole
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APT20M38BVRG 5960-apt20m38bvr-datasheet
APT20M38BVRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 67A TO-247
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 370W (Tc)
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JANTX2N6760 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH TO-204AA TO-3
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
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JAN2N6766 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH TO-204AE TO-3
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
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APT97N65LC6 123473-apt97n65b2c6-apt97n65lc6-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 97A TO-264
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 41mOhm @ 48.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 25V
Power Dissipation (Max): 862W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA
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JANTX2N6766 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH TO-204AE TO-3
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
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APT20M38BVFRG index.php?option=com_docman&task=doc_download&gid=14813
APT20M38BVFRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 67A TO-247
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 370W (Tc)
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6798
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT56F50L 7147-apt56f50b2-apt56f50l-datasheet
APT56F50L
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 56A TO-264
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
Power Dissipation (Max): 780W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT47N65SCS3G
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 47A TO-247
Packaging: Bulk
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Power Dissipation (Max): 417W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
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APT47N65BC3G 7067-apt47n65bc3-apt47n65sc3-datasheet
APT47N65BC3G
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 47A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
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JANTXV2N6762 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
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JANTXV2N6760 8925-lds-0111-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
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APT20M22B2VRG index.php?option=com_docman&task=doc_download&gid=14813
APT20M22B2VRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 100A T-MAX
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
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APT20M22LVRG 5955-apt20m22lvr-datasheet
APT20M22LVRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 100A TO-264
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20M22B2VFRG APT20M22B2VFR.pdf
APT20M22B2VFRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 100A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
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APT20M22LVFRG 6752-apt20m22lvfrg-datasheet
APT20M22LVFRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 100A TO-264
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
Vgs (Max): ±30V
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Mounting Type: Through Hole
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2N6782U 125241-lds-0064-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 18LCC
Packaging: Bulk
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6766 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Vgs (Max): ±20V
Package / Case: TO-204AE
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
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JAN2N6901 123510-lds-0188-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 1.69A TO205AF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
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JANTXV2N6782 8905-lds-0064-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 3.5A
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
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2N6849U 125287-lds-0009-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A 18ULCC
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6796U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs: 6.34nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6800U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.75nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6798U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 18LCC
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.29nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6802U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 18LCC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.46nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6901 123510-lds-0188-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 1.69A TO205AF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
JAN2N6804 125024-lds-0113-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 11A TO-3
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6804 125024-lds-0113-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 11A
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
JAN2N6782U 125241-lds-0064-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 18-LCC
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6901 123510-lds-0188-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 1.69A TO205AF
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 8.33W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-205AF Metal Can
Supplier Device Package: TO-205AF (TO-39)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6798U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 18-LCC
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6798U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6782U 125241-lds-0064-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 3.5A
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 610mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6798U 2N6796_798_800_802U.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH
Package / Case: 18-CLCC
Supplier Device Package: 18-ULCC (9.14x7.49)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42.07nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7335 124533-lds-0215-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET 4P-CH 100V 0.75A MO-036AB
FET Feature: Standard
FET Type: 4 P-Channel
Part Status: Obsolete
Packaging: Bulk
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: MO-036AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7224U 125220-lds-0102-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7225U 125220-lds-0102-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 27.4A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7228 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7227U 125220-lds-0102-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7227 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Packaging: Bulk
Manufacturer: Microsemi Corporation
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 315mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7228U 125220-lds-0102-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 415mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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