Die Produkte microsemi corporation

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JAN2N7335 124533-lds-0215-datasheet Microsemi Corporation Description: MOSFET 4P-CH 100V 0.75A MO-036AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Package / Case: 14-DIP (0.300", 7.62mm)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 P-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7224 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 34A TO254AA
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7225 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 27.4A TO254AA
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N7335 124533-lds-0215-datasheet Microsemi Corporation Description: MOSFET 4P-CH 100V 0.75A MO-036AB
Power - Max: 1.4W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MO-036AB
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 P-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
JANTXV2N7335 124533-lds-0215-datasheet Microsemi Corporation Description: MOSFET 4P-CH 100V 0.75A MO-036AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 P-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: MO-036AB
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N7228 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 12A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7236 8900-lds-0061-datasheet Microsemi Corporation Description: MOSFET P-CH 100V 18A TO254AA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7236U 125222-lds-0061-1-datasheet Microsemi Corporation Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N7228 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 12A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N7227 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 400V 14A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 415mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N7227 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 400V 14A TO254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 415mOhm @ 14A, 10V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Packaging: Bulk
Manufacturer: Microsemi Corporation
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N7224 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 34A TO254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N7225 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 27.4A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 27.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N7227 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 400V 14A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 415mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
JANTX2N7224 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 34A TO254AA
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N7225 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 27.4A TO254AA
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 27.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N7228 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 12A TO254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N7224 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 34A TO254AA
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N7225 8924-lds-0102-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 27.4A TO254AA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 27.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6764T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 38A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6766T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 30A TO254AA
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N7236 8900-lds-0061-datasheet Microsemi Corporation Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N7236 8900-lds-0061-datasheet Microsemi Corporation Description: MOSFET P-CH 100V 18A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N7236 8900-lds-0061-datasheet Microsemi Corporation Description: MOSFET P-CH 100V 18A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6764T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 38A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6766T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 30A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6768T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 400V 14A TO254AA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Base Part Number: 2N6768
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6770T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 12A TO254AA
Base Part Number: 2N6770
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Manufacturer: Microsemi Corporation
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6764T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 100V 38A TO254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6766T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 30A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6768T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 400V 14A TO254AA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Manufacturer: Microsemi Corporation
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6770T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 12A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6768T1 index.php?option=com_docman&task=doc_download&gid=77270 Microsemi Corporation Description: MOSFET N-CH TO-254AA
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6770T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 12A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6768T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 400V 14A TO254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Packaging: Bulk
Manufacturer: Microsemi Corporation
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6770T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 12A TO254AA
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10M09B2VFRG APT10M09B2VFRG apt10m09(b2,l)vfr.pdf Microsemi Corporation Description: MOSFET N-CH 100V 100A T-MAX
Packaging: Tube
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power Dissipation (Max): 625W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10M11B2VFRG APT10M11B2VFRG APT10M11(B2,L)VFR.pdf Microsemi Corporation Description: MOSFET N-CH 100V 100A T-MAX
Packaging: Tube
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: T-MAX™
Package / Case: TO-247-3 Variant
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT17N80BC3G APT17N80BC3G APT17N80(B,S)C3.pdf Microsemi Corporation Description: MOSFET N-CH 800V 17A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
FET Type: N-Channel
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT17N80SC3G APT17N80SC3G APT17N80(B,S)C3.pdf Microsemi Corporation Description: MOSFET N-CH 800V 17A D3PAK
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power Dissipation (Max): 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20N60SC3G APT20N60SC3G APT20N60xC3G.pdf Microsemi Corporation Description: MOSFET N-CH 600V 20.7A D3PAK
Manufacturer: Microsemi Corporation
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 25V
Power Dissipation (Max): 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT31N60BCSG APT31N60BCSG APT31N60BCS(G).pdf Microsemi Corporation Description: MOSFET N-CH 600V 31A TO-247
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 255W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3055pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT5018BLLG APT5018BLLG APT5018_B,S_LL.pdf Microsemi Corporation Description: MOSFET N-CH 500V 27A TO-247
Supplier Device Package: TO-247 [B]
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2596pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT5518BFLLG APT5518BFLLG APT5518(B,S)FLL.pdf Microsemi Corporation Description: MOSFET N-CH 550V 31A TO-247
Packaging: Tube
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3286pF @ 25V
Power Dissipation (Max): 403W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT8024LLLG APT8024LLLG Microsemi Corporation Description: MOSFET N-CH 800V 31A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 565W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 240mOhm @ 15.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT8024LVRG APT8024LVRG Microsemi Corporation Description: MOSFET N-CH 800V 33A TO264
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 7740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 240mOhm @ 16.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL5992 Microsemi Corporation Description: ZENER DIODE
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6316C 10924-lds-0193-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: B, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6316C 10924-lds-0193-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS1N6316DUS 11083-lds-0193-1-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±1%
Power - Max: 500mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6316DUS 11083-lds-0193-1-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±1%
Power - Max: 500mW
Supplier Device Package: B, SQ-MELF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3595UR-1 JANTX1N3595UR-1 8840-lds-0027-pdf Microsemi Corporation Description: DIODE GEN PURP 125V 150MA DO213
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 125 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 3 µs
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VRF2933FL VRF2933FL Microsemi Corporation Description: MOSFET RF N-CH 170V 30MHZ T2
Supplier Device Package: M177
Package / Case: M177
Voltage - Rated: 170V
Power - Output: 300W
Current - Test: 250mA
Current Rating (Amps): 42A
Voltage - Test: 50V
Gain: 22dB
Frequency: 30MHz
Transistor Type: N-Channel
Part Status: Active
Packaging: Bulk
auf Bestellung 52 Stücke
Lieferzeit 21-28 Tag (e)
PD02B104 PD02B104 PD02B104.pdf Microsemi Corporation Description: DISPLAY PLASMA GRAPHIC 128X64MOD
Graphics Color: Orange
Background Color: Gray
Dot Pixels: 64 x 128
Viewing Area: 129.54mm W x 64.52mm H
Interface: Serial
Part Status: Obsolete
Backlight: Without Backlight
Display Type: Plasma
Packaging: Box
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
150-709 133278-gps-in-line-lightning-arrestor Microsemi Corporation Description: GPS IN-LINE LIGHTNING ARRESTOR
Packaging: Bulk
Number of Circuits: 1
Part Status: Active
Technology: Mixed Technology
Applications: GPS
Mounting Type: In Line
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N2102S 2N2102S Microsemi Corporation Description: NPN TRANSISTOR
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28427 Stücke - Preis und Lieferfrist anzeigen
APT10SCD65K APT10SCD65K 132541-apt10scd65k-datasheet Microsemi Corporation Description: DIODE SILICON 650V 17A TO220
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 17A
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
Part Status: Obsolete
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220 [K]
Package / Case: TO-220-2
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10SCD65KCT APT10SCD65KCT 132542-apt10scd65kct-datasheet Microsemi Corporation Description: DIODE SILICON 650V 17A TO220
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io) (per Diode): 17A
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200µA @ 650V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4693E3 Microsemi Corporation Description: DIODE ZENER 7.5V 500MW DO-35
Packaging: Bulk
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 7.5 V
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X50DC120J APT2X50DC120J index.php?option=com_docman&task=doc_download&gid=6852 Microsemi Corporation Description: DIODE MODULE 1.2KV 50A SOT227
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE130CAE3/TR13 10895-sa4-59-datasheet Microsemi Corporation Description: TVS DIODE 111VWM 179VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6001UR Microsemi Corporation Description: ZENER DIODE
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
LX7180A-11CLQ-TR LX7180A-11CLQ-TR index.php?option=com_docman&task=doc_download&gid=132766 Microsemi Corporation Description: IC REG BUCK PROG 4A 12QFN
Packaging: Tape & Reel (TR)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Programmable
Number of Outputs: 1
Voltage - Input (Min): 3V
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 5.5V
Current - Output: 4A
Frequency - Switching: 1.65MHz
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFLGA
Supplier Device Package: 12-QFN (2x2)
Base Part Number: LX7180
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6316D 10924-lds-0193-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: B, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±1%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
469-03 469-01_~_469-05.pdf Microsemi Corporation Description: BRIDGE RECTIFIER
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MMAD1103E3/TR13 MMAD1103E3/TR13 132791-mmad1103-datasheet Microsemi Corporation Description: TVS DIODE 75V 14SOIC
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.5pF @ 1MHz
Applications: Ethernet
Power Line Protection: No
Voltage - Breakdown (Min): 90V
Voltage - Reverse Standoff (Typ): 75V (Max)
Unidirectional Channels: 8
Type: Steering (Rail to Rail)
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL6263 Microsemi Corporation Description: ZENER DIODE
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5554US/TR 10966-sa7-43-datasheet Microsemi Corporation Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M2S025T-VFG400I M2S025T-VFG400I 132042-ds0128-igloo2-and-smartfusion2-datasheet Microsemi Corporation Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Number of I/O: 207
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: FPGA - 25K Logic Modules
Speed: 166MHz
Part Status: Active
Packaging: Tray
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M2S010T-VFG400I M2S010T-VFG400I 132042-ds0128-igloo2-and-smartfusion2-datasheet Microsemi Corporation Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Packaging: Tray
Part Status: Active
Architecture: MCU, FPGA
Core Processor: ARM® Cortex®-M3
Flash Size: 256KB
RAM Size: 64KB
Peripherals: DDR, PCIe, SERDES
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Speed: 166MHz
Primary Attributes: FPGA - 10K Logic Modules
Operating Temperature: -40°C ~ 100°C (TJ)
Package / Case: 400-LFBGA
Supplier Device Package: 400-VFBGA (17x17)
Number of I/O: 195
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M2S050T-VFG400I M2S050T-VFG400I 132042-ds0128-igloo2-and-smartfusion2-datasheet Microsemi Corporation Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Packaging: Tray
Part Status: Active
Architecture: MCU, FPGA
Core Processor: ARM® Cortex®-M3
Flash Size: 256KB
RAM Size: 64KB
Peripherals: DDR, PCIe, SERDES
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Speed: 166MHz
Primary Attributes: FPGA - 50K Logic Modules
Operating Temperature: -40°C ~ 100°C (TJ)
Package / Case: 400-LFBGA
Supplier Device Package: 400-VFBGA (17x17)
Number of I/O: 207
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5290-1 JANTX1N5290-1 8970-lds-0159-pdf Microsemi Corporation Description: DIODE REG 500MW DO-7
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Current - Output: 470µA
Voltage - Input: 100V (Max)
Accuracy: ±10%
Function: Current Regulator
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 58 Stücke - Preis und Lieferfrist anzeigen
JANTX1N5291UR-1 123508-lds-0160-pdf Microsemi Corporation Description: DIODE REG 500MW DO-213AB
Packaging: Bulk
Mounting Type: Surface Mount
Part Status: Discontinued at Digi-Key
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Voltage - Limiting (Max): 1.1V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N2920 JANTXV2N2920 Microsemi Corporation Description: TRANS 2NPN 60V 0.03A TO-78
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30mA
Transistor Type: 2 NPN (Dual)
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-78-6
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Operating Temperature: 200°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC40H1201G APTDC40H1201G 7411-aptdc40h1201g-datasheet Microsemi Corporation Description: BRIDGE RECT 1PHASE 1.2KV 40A SP1
Packaging: Bulk
Manufacturer: Microchip Technology
Base Part Number: APTDC40
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N2324S JANTX2N2324S 6024-2n2323-datasheet Microsemi Corporation Description: SCR 100V TO5
Current - Gate Trigger (Igt) (Max): 200µA
Voltage - Gate Trigger (Vgt) (Max): 800mV
Voltage - Off State: 100V
Supplier Device Package: TO-5
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 2mA
Current - On State (It (AV)) (Max): 220mA
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N2324AS JANTX2N2324AS 6024-2n2323-datasheet Microsemi Corporation Description: SCR 100V TO5
Supplier Device Package: TO-5
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 2mA
Current - On State (It (AV)) (Max): 220mA
Current - Gate Trigger (Igt) (Max): 200µA
Voltage - Gate Trigger (Vgt) (Max): 800mV
Voltage - Off State: 100V
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N2324A JANTX2N2324A 6024-2n2323-datasheet Microsemi Corporation Description: SCR 100V TO5
Current - Gate Trigger (Igt) (Max): 20µA
Voltage - Gate Trigger (Vgt) (Max): 600mV
Voltage - Off State: 100V
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-5
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 2mA
Current - On State (It (AV)) (Max): 220mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4336 Stücke - Preis und Lieferfrist anzeigen
1N6660 1N6660 8817-lds-0015-datasheet Microsemi Corporation Description: DIODE ARRAY SCHOTTKY 45V TO254AA
Supplier Device Package: TO-254AA
Diode Configuration: 1 Pair Common Cathode
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Surface Mount
Operating Temperature - Junction: -65°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N960B 1N9xxB.pdf FAIRS28805-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 1N957B_973B.pdf Microsemi Corporation Description: ZENER DIODE
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50481 Stücke - Preis und Lieferfrist anzeigen
M2GL025T-VFG400I M2GL025T-VFG400I 132042-ds0128-igloo2-and-smartfusion2-datasheet Microsemi Corporation Description: IC FPGA 195 I/O 400VFBGA
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 1.14V ~ 2.625V
Number of I/O: 195
Total RAM Bits: 1130496
Number of Logic Elements/Cells: 27696
Part Status: Active
Packaging: Tray
auf Bestellung 82 Stücke
Lieferzeit 21-28 Tag (e)
M2GL025T-FGG484I M2GL025T-FGG484I 132042-ds0128-igloo2-and-smartfusion2-datasheet Microsemi Corporation Description: IC FPGA 267 I/O 484FBGA
Packaging: Tray
Part Status: Active
Number of Logic Elements/Cells: 27696
Total RAM Bits: 1130496
Number of I/O: 267
Voltage - Supply: 1.14V ~ 2.625V
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C (TJ)
Package / Case: 484-BGA
Supplier Device Package: 484-FPBGA (23x23)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M2GL010-FGG484I M2GL010-FGG484I 132042-ds0128-igloo2-and-smartfusion2-datasheet Microsemi Corporation Description: IC FPGA 233 I/O 484FBGA
Packaging: Tray
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 1.14V ~ 2.625V
Number of I/O: 233
Total RAM Bits: 933888
Number of Logic Elements/Cells: 12084
Part Status: Active
auf Bestellung 112 Stücke
Lieferzeit 21-28 Tag (e)
JANTX2N3637 JANTX2N3637 8968-lds-0156-datasheet Microsemi Corporation Description: TRANS PNP 175V 1A TO-39
Supplier Device Package: TO-5
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 175V
Current - Collector (Ic) (Max): 1A
Transistor Type: PNP
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90 Stücke - Preis und Lieferfrist anzeigen
JANTX2N2857 JANTX2N2857 9627-ms2209-revb-datasheet Microsemi Corporation Description: RF TRANS NPN 15V 500MHZ TO72
Supplier Device Package: TO-72
Package / Case: TO-72-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Frequency - Transition: 500MHz
Current - Collector (Ic) (Max): 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Power - Max: 200mW
Gain: 12.5dB ~ 21dB @ 450MHz
Part Status: Obsolete
Packaging: Bulk
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 57000 Stücke - Preis und Lieferfrist anzeigen
JANTX2N3716 JANTX2N3716 6049-2n3715-pdf Microsemi Corporation Description: TRANS NPN 80V 10A TO-3
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-204AA (TO-3)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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2N4236 2N4236 132571-lds-0319-datasheet Microsemi Corporation Description: TRANS PNP 80V 1A TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Packaging: Bulk
Base Part Number: 2N4236
Supplier Device Package: TO-39 (TO-205AD)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N5680 2N5680 6095-2n5679-datasheet Microsemi Corporation Description: TRANS PNP 120V 1A TO-39
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 1A
Transistor Type: PNP
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
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2N6317 2N6317 125208-lds-0283-datasheet Microsemi Corporation Description: TRANS PNP 60V 7A TO-213AA
Packaging: Bulk
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2.5A, 4V
Power - Max: 90W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
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2N3251A 2N3251A 8919-lds-0093-datasheet Microsemi Corporation Description: TRANS PNP 60V 0.2A TO-39
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 200mA
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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2N3637UB 2N3637UB 8968-lds-0156-datasheet Microsemi Corporation Description: TRANS PNP 175V 1A 3PIN SMD
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Packaging: Tray
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N2920 2N2920 2N2920(A).pdf Microsemi Corporation Description: TRANS 2NPN 60V 0.03A TO-78
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30mA
Transistor Type: 2 NPN (Dual)
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-78-6
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JAN2N2945A JAN2N2945A 124373-lds-0236-datasheet Microsemi Corporation Description: TRANS PNP 20V 0.1A TO-46
Supplier Device Package: TO-46
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Packaging: Bulk
Current - Collector Cutoff (Max): 10µA (ICBO)
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP
Part Status: Active
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JANTX2N5663 JANTX2N5663 122692-lds-0184-datasheet Microsemi Corporation Description: TRANS NPN 300V 2A TO-5
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 2A
Transistor Type: NPN
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-5
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Packaging: Bulk
Current - Collector Cutoff (Max): 200nA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JANTX2N5109 JANTX2N5109 Microsemi Corporation Description: TRANS NPN TO-39
Base Part Number: 2N5109
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Manufacturer: Microsemi Corporation
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JANTX2N3251A JANTX2N3251A 8919-lds-0093-datasheet Microsemi Corporation Description: TRANS PNP 60V 0.2A TO-39
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 200mA
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JANTX2N3792 JANTX2N3792 6056-2n3791-pdf Microsemi Corporation Description: TRANS PNP 80V 10A TO-3
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Packaging: Bulk
Current - Collector (Ic) (Max): 10 A
Part Status: Active
Supplier Device Package: TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Current - Collector Cutoff (Max): 5mA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
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JANTX2N3439UA JANTX2N3439UA 125353-lds-0022-3-datasheet Microsemi Corporation Description: TRANS NPN 350V 1A UA
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6193 2N6193 6106-2n6193-datasheet Microsemi Corporation Description: TRANS PNP 100V 5A TO-39
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 5A
Transistor Type: PNP
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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2N3866 2N3866 77284-lds-0175-datasheet техническая информация Microsemi Corporation Description: TRANS NPN 30V 0.4A TO-39
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 400mA
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Manufacturer: Microchip Technology
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 5V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JAN2N7335 124533-lds-0215-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET 4P-CH 100V 0.75A MO-036AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Package / Case: 14-DIP (0.300", 7.62mm)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 P-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7224 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7225 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 27.4A TO254AA
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N7335 124533-lds-0215-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET 4P-CH 100V 0.75A MO-036AB
Power - Max: 1.4W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MO-036AB
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 P-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
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JANTXV2N7335 124533-lds-0215-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET 4P-CH 100V 0.75A MO-036AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 P-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: MO-036AB
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N7228 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7236 8900-lds-0061-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N7236U 125222-lds-0061-1-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N7228 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N7227 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 415mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N7227 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 415mOhm @ 14A, 10V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Packaging: Bulk
Manufacturer: Microsemi Corporation
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N7224 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N7225 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 27.4A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 27.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N7227 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 415mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JANTX2N7224 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N7225 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 27.4A TO254AA
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 27.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N7228 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 515mOhm @ 12A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N7224 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N7225 8924-lds-0102-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 27.4A TO254AA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 105mOhm @ 27.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6764T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 38A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6766T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO254AA
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N7236 8900-lds-0061-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N7236 8900-lds-0061-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N7236 8900-lds-0061-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6764T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 38A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6766T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6768T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Base Part Number: 2N6768
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6770T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Base Part Number: 2N6770
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Manufacturer: Microsemi Corporation
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6764T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 38A TO254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 38A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6766T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6768T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Manufacturer: Microsemi Corporation
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6770T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6768T1 index.php?option=com_docman&task=doc_download&gid=77270
Hersteller: Microsemi Corporation
Description: MOSFET N-CH TO-254AA
Supplier Device Package: TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6770T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6768T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 400V 14A TO254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Packaging: Bulk
Manufacturer: Microsemi Corporation
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6770T1 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10M09B2VFRG apt10m09(b2,l)vfr.pdf
APT10M09B2VFRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 100A T-MAX
Packaging: Tube
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power Dissipation (Max): 625W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10M11B2VFRG APT10M11(B2,L)VFR.pdf
APT10M11B2VFRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 100A T-MAX
Packaging: Tube
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: T-MAX™
Package / Case: TO-247-3 Variant
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT17N80BC3G APT17N80(B,S)C3.pdf
APT17N80BC3G
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 17A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
FET Type: N-Channel
Packaging: Tube
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT17N80SC3G APT17N80(B,S)C3.pdf
APT17N80SC3G
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 17A D3PAK
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power Dissipation (Max): 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT20N60SC3G APT20N60xC3G.pdf
APT20N60SC3G
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 20.7A D3PAK
Manufacturer: Microsemi Corporation
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 25V
Power Dissipation (Max): 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT31N60BCSG APT31N60BCS(G).pdf
APT31N60BCSG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 31A TO-247
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 255W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3055pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT5018BLLG APT5018_B,S_LL.pdf
APT5018BLLG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 27A TO-247
Supplier Device Package: TO-247 [B]
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2596pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT5518BFLLG APT5518(B,S)FLL.pdf
APT5518BFLLG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 550V 31A TO-247
Packaging: Tube
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3286pF @ 25V
Power Dissipation (Max): 403W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT8024LLLG
APT8024LLLG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 31A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 565W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 240mOhm @ 15.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT8024LVRG
APT8024LVRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 33A TO264
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 [L]
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 7740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 240mOhm @ 16.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL5992
Hersteller: Microsemi Corporation
Description: ZENER DIODE
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6316C 10924-lds-0193-datasheet
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: B, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6316C 10924-lds-0193-datasheet
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS1N6316DUS 11083-lds-0193-1-datasheet
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±1%
Power - Max: 500mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6316DUS 11083-lds-0193-1-datasheet
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±1%
Power - Max: 500mW
Supplier Device Package: B, SQ-MELF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3595UR-1 8840-lds-0027-pdf
JANTX1N3595UR-1
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 150MA DO213
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 125 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Current - Average Rectified (Io): 150mA
Reverse Recovery Time (trr): 3 µs
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VRF2933FL
VRF2933FL
Hersteller: Microsemi Corporation
Description: MOSFET RF N-CH 170V 30MHZ T2
Supplier Device Package: M177
Package / Case: M177
Voltage - Rated: 170V
Power - Output: 300W
Current - Test: 250mA
Current Rating (Amps): 42A
Voltage - Test: 50V
Gain: 22dB
Frequency: 30MHz
Transistor Type: N-Channel
Part Status: Active
Packaging: Bulk
auf Bestellung 52 Stücke
Lieferzeit 21-28 Tag (e)
PD02B104 PD02B104.pdf
PD02B104
Hersteller: Microsemi Corporation
Description: DISPLAY PLASMA GRAPHIC 128X64MOD
Graphics Color: Orange
Background Color: Gray
Dot Pixels: 64 x 128
Viewing Area: 129.54mm W x 64.52mm H
Interface: Serial
Part Status: Obsolete
Backlight: Without Backlight
Display Type: Plasma
Packaging: Box
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
150-709 133278-gps-in-line-lightning-arrestor
Hersteller: Microsemi Corporation
Description: GPS IN-LINE LIGHTNING ARRESTOR
Packaging: Bulk
Number of Circuits: 1
Part Status: Active
Technology: Mixed Technology
Applications: GPS
Mounting Type: In Line
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N2102S
2N2102S
Hersteller: Microsemi Corporation
Description: NPN TRANSISTOR
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28427 Stücke - Preis und Lieferfrist anzeigen
APT10SCD65K 132541-apt10scd65k-datasheet
APT10SCD65K
Hersteller: Microsemi Corporation
Description: DIODE SILICON 650V 17A TO220
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 650V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 17A
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
Part Status: Obsolete
Packaging: Bulk
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220 [K]
Package / Case: TO-220-2
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10SCD65KCT 132542-apt10scd65kct-datasheet
APT10SCD65KCT
Hersteller: Microsemi Corporation
Description: DIODE SILICON 650V 17A TO220
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io) (per Diode): 17A
Voltage - DC Reverse (Vr) (Max): 650V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200µA @ 650V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4693E3
Hersteller: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO-35
Packaging: Bulk
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 7.5 V
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT2X50DC120J index.php?option=com_docman&task=doc_download&gid=6852
APT2X50DC120J
Hersteller: Microsemi Corporation
Description: DIODE MODULE 1.2KV 50A SOT227
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Current - Average Rectified (Io) (per Diode): 50A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
P6KE130CAE3/TR13 10895-sa4-59-datasheet
Hersteller: Microsemi Corporation
Description: TVS DIODE 111VWM 179VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6001UR
Hersteller: Microsemi Corporation
Description: ZENER DIODE
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
LX7180A-11CLQ-TR index.php?option=com_docman&task=doc_download&gid=132766
LX7180A-11CLQ-TR
Hersteller: Microsemi Corporation
Description: IC REG BUCK PROG 4A 12QFN
Packaging: Tape & Reel (TR)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Programmable
Number of Outputs: 1
Voltage - Input (Min): 3V
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 5.5V
Current - Output: 4A
Frequency - Switching: 1.65MHz
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFLGA
Supplier Device Package: 12-QFN (2x2)
Base Part Number: LX7180
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6316D 10924-lds-0193-datasheet
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: B, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±1%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
469-03 469-01_~_469-05.pdf
Hersteller: Microsemi Corporation
Description: BRIDGE RECTIFIER
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MMAD1103E3/TR13 132791-mmad1103-datasheet
MMAD1103E3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 75V 14SOIC
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.5pF @ 1MHz
Applications: Ethernet
Power Line Protection: No
Voltage - Breakdown (Min): 90V
Voltage - Reverse Standoff (Typ): 75V (Max)
Unidirectional Channels: 8
Type: Steering (Rail to Rail)
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
CDLL6263
Hersteller: Microsemi Corporation
Description: ZENER DIODE
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5554US/TR 10966-sa7-43-datasheet
Hersteller: Microsemi Corporation
Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M2S025T-VFG400I 132042-ds0128-igloo2-and-smartfusion2-datasheet
M2S025T-VFG400I
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Number of I/O: 207
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: FPGA - 25K Logic Modules
Speed: 166MHz
Part Status: Active
Packaging: Tray
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M2S010T-VFG400I 132042-ds0128-igloo2-and-smartfusion2-datasheet
M2S010T-VFG400I
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Packaging: Tray
Part Status: Active
Architecture: MCU, FPGA
Core Processor: ARM® Cortex®-M3
Flash Size: 256KB
RAM Size: 64KB
Peripherals: DDR, PCIe, SERDES
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Speed: 166MHz
Primary Attributes: FPGA - 10K Logic Modules
Operating Temperature: -40°C ~ 100°C (TJ)
Package / Case: 400-LFBGA
Supplier Device Package: 400-VFBGA (17x17)
Number of I/O: 195
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
M2S050T-VFG400I 132042-ds0128-igloo2-and-smartfusion2-datasheet
M2S050T-VFG400I
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Packaging: Tray
Part Status: Active
Architecture: MCU, FPGA
Core Processor: ARM® Cortex®-M3
Flash Size: 256KB
RAM Size: 64KB
Peripherals: DDR, PCIe, SERDES
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Speed: 166MHz
Primary Attributes: FPGA - 50K Logic Modules
Operating Temperature: -40°C ~ 100°C (TJ)
Package / Case: 400-LFBGA
Supplier Device Package: 400-VFBGA (17x17)
Number of I/O: 207
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5290-1 8970-lds-0159-pdf
JANTX1N5290-1
Hersteller: Microsemi Corporation
Description: DIODE REG 500MW DO-7
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Current - Output: 470µA
Voltage - Input: 100V (Max)
Accuracy: ±10%
Function: Current Regulator
Part Status: Discontinued at Digi-Key
Packaging: Bulk
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JANTX1N5291UR-1 123508-lds-0160-pdf
Hersteller: Microsemi Corporation
Description: DIODE REG 500MW DO-213AB
Packaging: Bulk
Mounting Type: Surface Mount
Part Status: Discontinued at Digi-Key
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Voltage - Limiting (Max): 1.1V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N2920
JANTXV2N2920
Hersteller: Microsemi Corporation
Description: TRANS 2NPN 60V 0.03A TO-78
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30mA
Transistor Type: 2 NPN (Dual)
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-78-6
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Operating Temperature: 200°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APTDC40H1201G 7411-aptdc40h1201g-datasheet
APTDC40H1201G
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 40A SP1
Packaging: Bulk
Manufacturer: Microchip Technology
Base Part Number: APTDC40
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N2324S 6024-2n2323-datasheet
JANTX2N2324S
Hersteller: Microsemi Corporation
Description: SCR 100V TO5
Current - Gate Trigger (Igt) (Max): 200µA
Voltage - Gate Trigger (Vgt) (Max): 800mV
Voltage - Off State: 100V
Supplier Device Package: TO-5
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 2mA
Current - On State (It (AV)) (Max): 220mA
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N2324AS 6024-2n2323-datasheet
JANTX2N2324AS
Hersteller: Microsemi Corporation
Description: SCR 100V TO5
Supplier Device Package: TO-5
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 2mA
Current - On State (It (AV)) (Max): 220mA
Current - Gate Trigger (Igt) (Max): 200µA
Voltage - Gate Trigger (Vgt) (Max): 800mV
Voltage - Off State: 100V
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N2324A 6024-2n2323-datasheet
JANTX2N2324A
Hersteller: Microsemi Corporation
Description: SCR 100V TO5
Current - Gate Trigger (Igt) (Max): 20µA
Voltage - Gate Trigger (Vgt) (Max): 600mV
Voltage - Off State: 100V
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-5
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 125°C
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 2mA
Current - On State (It (AV)) (Max): 220mA
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1N6660 8817-lds-0015-datasheet
1N6660
Hersteller: Microsemi Corporation
Description: DIODE ARRAY SCHOTTKY 45V TO254AA
Supplier Device Package: TO-254AA
Diode Configuration: 1 Pair Common Cathode
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Manufacturer: Microsemi Corporation
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Surface Mount
Operating Temperature - Junction: -65°C ~ 150°C
Current - Reverse Leakage @ Vr: 1mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
Current - Average Rectified (Io) (per Diode): 15A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N960B 1N9xxB.pdf FAIRS28805-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 1N957B_973B.pdf
Hersteller: Microsemi Corporation
Description: ZENER DIODE
Part Status: Active
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M2GL025T-VFG400I 132042-ds0128-igloo2-and-smartfusion2-datasheet
M2GL025T-VFG400I
Hersteller: Microsemi Corporation
Description: IC FPGA 195 I/O 400VFBGA
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 1.14V ~ 2.625V
Number of I/O: 195
Total RAM Bits: 1130496
Number of Logic Elements/Cells: 27696
Part Status: Active
Packaging: Tray
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M2GL025T-FGG484I 132042-ds0128-igloo2-and-smartfusion2-datasheet
M2GL025T-FGG484I
Hersteller: Microsemi Corporation
Description: IC FPGA 267 I/O 484FBGA
Packaging: Tray
Part Status: Active
Number of Logic Elements/Cells: 27696
Total RAM Bits: 1130496
Number of I/O: 267
Voltage - Supply: 1.14V ~ 2.625V
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C (TJ)
Package / Case: 484-BGA
Supplier Device Package: 484-FPBGA (23x23)
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M2GL010-FGG484I 132042-ds0128-igloo2-and-smartfusion2-datasheet
M2GL010-FGG484I
Hersteller: Microsemi Corporation
Description: IC FPGA 233 I/O 484FBGA
Packaging: Tray
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Voltage - Supply: 1.14V ~ 2.625V
Number of I/O: 233
Total RAM Bits: 933888
Number of Logic Elements/Cells: 12084
Part Status: Active
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Lieferzeit 21-28 Tag (e)
JANTX2N3637 8968-lds-0156-datasheet
JANTX2N3637
Hersteller: Microsemi Corporation
Description: TRANS PNP 175V 1A TO-39
Supplier Device Package: TO-5
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 175V
Current - Collector (Ic) (Max): 1A
Transistor Type: PNP
Part Status: Active
Packaging: Bulk
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JANTX2N2857 9627-ms2209-revb-datasheet
JANTX2N2857
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 500MHZ TO72
Supplier Device Package: TO-72
Package / Case: TO-72-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Frequency - Transition: 500MHz
Current - Collector (Ic) (Max): 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Power - Max: 200mW
Gain: 12.5dB ~ 21dB @ 450MHz
Part Status: Obsolete
Packaging: Bulk
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
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JANTX2N3716 6049-2n3715-pdf
JANTX2N3716
Hersteller: Microsemi Corporation
Description: TRANS NPN 80V 10A TO-3
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-204AA (TO-3)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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2N4236 132571-lds-0319-datasheet
2N4236
Hersteller: Microsemi Corporation
Description: TRANS PNP 80V 1A TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Packaging: Bulk
Base Part Number: 2N4236
Supplier Device Package: TO-39 (TO-205AD)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N5680 6095-2n5679-datasheet
2N5680
Hersteller: Microsemi Corporation
Description: TRANS PNP 120V 1A TO-39
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 1A
Transistor Type: PNP
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
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2N6317 125208-lds-0283-datasheet
2N6317
Hersteller: Microsemi Corporation
Description: TRANS PNP 60V 7A TO-213AA
Packaging: Bulk
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2.5A, 4V
Power - Max: 90W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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2N3251A 8919-lds-0093-datasheet
2N3251A
Hersteller: Microsemi Corporation
Description: TRANS PNP 60V 0.2A TO-39
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 200mA
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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2N3637UB 8968-lds-0156-datasheet
2N3637UB
Hersteller: Microsemi Corporation
Description: TRANS PNP 175V 1A 3PIN SMD
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 175 V
Packaging: Tray
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N2920 2N2920(A).pdf
2N2920
Hersteller: Microsemi Corporation
Description: TRANS 2NPN 60V 0.03A TO-78
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30mA
Transistor Type: 2 NPN (Dual)
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-78-6
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
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JAN2N2945A 124373-lds-0236-datasheet
JAN2N2945A
Hersteller: Microsemi Corporation
Description: TRANS PNP 20V 0.1A TO-46
Supplier Device Package: TO-46
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Packaging: Bulk
Current - Collector Cutoff (Max): 10µA (ICBO)
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JANTX2N5663 122692-lds-0184-datasheet
JANTX2N5663
Hersteller: Microsemi Corporation
Description: TRANS NPN 300V 2A TO-5
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 2A
Transistor Type: NPN
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-5
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Packaging: Bulk
Current - Collector Cutoff (Max): 200nA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JANTX2N5109
JANTX2N5109
Hersteller: Microsemi Corporation
Description: TRANS NPN TO-39
Base Part Number: 2N5109
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Manufacturer: Microsemi Corporation
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JANTX2N3251A 8919-lds-0093-datasheet
JANTX2N3251A
Hersteller: Microsemi Corporation
Description: TRANS PNP 60V 0.2A TO-39
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 200mA
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JANTX2N3792 6056-2n3791-pdf
JANTX2N3792
Hersteller: Microsemi Corporation
Description: TRANS PNP 80V 10A TO-3
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Packaging: Bulk
Current - Collector (Ic) (Max): 10 A
Part Status: Active
Supplier Device Package: TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Current - Collector Cutoff (Max): 5mA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JANTX2N3439UA 125353-lds-0022-3-datasheet
JANTX2N3439UA
Hersteller: Microsemi Corporation
Description: TRANS NPN 350V 1A UA
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N6193 6106-2n6193-datasheet
2N6193
Hersteller: Microsemi Corporation
Description: TRANS PNP 100V 5A TO-39
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 5A
Transistor Type: PNP
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
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2N3866 техническая информация 77284-lds-0175-datasheet
2N3866
Hersteller: Microsemi Corporation
Description: TRANS NPN 30V 0.4A TO-39
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 400mA
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Manufacturer: Microchip Technology
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 5V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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