Die Produkte microsemi corporation

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Foto Bezeichnung Tech.inf. Hersteller Beschreibung verfügbar/auf Bestellung
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JANTXV2N6193U3 Microsemi Corporation Description: TRANS PNP 100V 5A TO-39
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6211 Microsemi Corporation Description: TRANS PNP 225V 2A TO-66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 225 V
Power - Max: 3 W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
JANTX2N3439U4 Microsemi Corporation Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6211 Microsemi Corporation Description: TRANS PNP 225V 2A TO-66
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 225V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
Power - Max: 3W
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2280 Stücke - Preis und Lieferfrist anzeigen
JANTXV2N3467 Microsemi Corporation Description: TRANS PNP 40V 1A TO-3
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 1A
Transistor Type: PNP
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N4399 Microsemi Corporation Description: TRANS PNP 60V 30A TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-3 (TO-204AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Current - Collector Cutoff (Max): 100µA
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30A
Transistor Type: PNP
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature: -55°C ~ 200°C (TJ)
Power - Max: 5W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
JAN2N6250T1 123514-lds-0197-datasheet Microsemi Corporation Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N3251AUB 8919-lds-0093-datasheet Microsemi Corporation Description: TRANS PNP 60V 0.2A TO-39
Current - Collector (Ic) (Max): 200mA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: UB
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N5671 Microsemi Corporation Description: TRANS NPN 90V 30A TO-3
Supplier Device Package: TO-3 (TO-204AA)
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V
Current - Collector Cutoff (Max): 10mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Voltage - Collector Emitter Breakdown (Max): 90V
Current - Collector (Ic) (Max): 30A
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 80 Stücke - Preis und Lieferfrist anzeigen
JANTX2N5672 Microsemi Corporation Description: TRANS NPN 120V 30A TO-3
Supplier Device Package: TO-3 (TO-204AA)
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V
Current - Collector Cutoff (Max): 10mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 30A
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
JANTXV2N3251AUB 8919-lds-0093-datasheet Microsemi Corporation Description: TRANS PNP 60V 0.2A TO-39
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: UB
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 200mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6250T1 123514-lds-0197-datasheet Microsemi Corporation Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N2432 6026-2n2432-datasheet Microsemi Corporation Description: TRANS NPN 30V 0.1A
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Power - Max: 300mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8400 Stücke - Preis und Lieferfrist anzeigen
JANTXV2N6250T1 123514-lds-0197-datasheet Microsemi Corporation Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N3439UA 125353-lds-0022-3-datasheet Microsemi Corporation Description: TRANS NPN 350V 1A UA
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Power - Max: 800 mW
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
JAN2N6249T1 123514-lds-0197-datasheet Microsemi Corporation Description: TRANS NPN 200V 10A TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6249T1 123514-lds-0197-datasheet Microsemi Corporation Description: TRANS NPN 200V 10A TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N6193 Microsemi Corporation Description: TRANS PNP 100V 5A TO-39
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 5A
Transistor Type: PNP
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6249T1 JANTXV2N6249T1 123514-lds-0197-datasheet Microsemi Corporation Description: TRANS NPN 200V 10A TO-3
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N3439U4 Microsemi Corporation Description: TRANS NPN 350V 1A UA
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N5666U3 8902-lds-0062-pdf Microsemi Corporation Description: TRANS NPN 200V 5A TO-66
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Current - Collector Cutoff (Max): 200nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 5A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Supplier Device Package: U3
Package / Case: 3-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N6249T1 123514-lds-0197-datasheet Microsemi Corporation Description: TRANS NPN 200V 10A TO-3
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N6250T1 123514-lds-0197-datasheet Microsemi Corporation Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6316CUS 11083-lds-0193-1-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS1N6316C 10924-lds-0193-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: B, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N3507AU4 124386-lds-0016-2 Microsemi Corporation Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Power - Max: 1W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
LX7157BCLD 124259-lx7157b-datasheet Microsemi Corporation Description: IC REG BUCK ADJUSTABLE 3A 12DFN
Supplier Device Package: 12-DFN-EP (3x3.5)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -10°C ~ 85°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 2.2MHz
Current - Output: 3A
Voltage - Output (Max): 1.8V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 5.5V
Voltage - Input (Min): 3V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5940B 10922-sa5-57-datasheet Microsemi Corporation Description: ZENER DIODE
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
LX7104ISF LX7104ISF 124253-lx7104-datasheet Microsemi Corporation Description: IC REG BUCK ADJ 1.5A SOT23-6
Packaging: Bulk
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 18V
Voltage - Output (Min/Fixed): 0.81V
Voltage - Output (Max): 15V
Current - Output: 1.5A
Frequency - Switching: 1.4MHz
Synchronous Rectifier: No
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5258A (DO-35) 1N5258A (DO-35) 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Microsemi Corporation Description: DIODE ZENER 36V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3595A-1 8911-lds-0072-pdf Microsemi Corporation Description: DIODE GEN PURP 125V 150MA DO35
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3595A-1 8911-lds-0072-pdf Microsemi Corporation Description: DIODE GEN PURP 125V 150MA DO35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: DO-35
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N3595A-1 8911-lds-0072-pdf Microsemi Corporation Description: DIODE GEN PURP 125V 150MA DO35
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Through Hole
Packaging: Bulk
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3595UR-1 8840-lds-0027-pdf Microsemi Corporation Description: DIODE GP 125V 150MA DO213AA
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1nA @ 125V
Reverse Recovery Time (trr): 3µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6638 125437-lds-0218-datasheet Microsemi Corporation Description: DIODE GEN PURP 150V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: D, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6639 5896-1n6639-40-41-datasheet Microsemi Corporation Description: DIODE GEN PURP 75V 300MA AXIAL
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5D
Package / Case: D, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100nA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6639 5896-1n6639-40-41-datasheet Microsemi Corporation Description: DIODE GEN PURP 75V 300MA AXIAL
Current - Reverse Leakage @ Vr: 100µA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA
Current - Average Rectified (Io): 300mA (DC)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5D
Package / Case: D, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3595AUS Microsemi Corporation Description: DIODE GEN PURP 125V 150MA
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5248BDO35 1N5248BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Microsemi Corporation Description: DIODE ZENER 18V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6638US 5895-1n6638-42-43us-datasheet Microsemi Corporation Description: DIODE GEN PURP 150V 300MA D-MELF
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6638 125437-lds-0218-datasheet Microsemi Corporation Description: DIODE GEN PURP 125V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-Pak
Package / Case: D, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 125V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 150 Stücke - Preis und Lieferfrist anzeigen
JANTXV1N6639 5896-1n6639-40-41-datasheet Microsemi Corporation Description: DIODE GEN PURP 75V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Reverse Leakage @ Vr: 100nA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-Pak
Package / Case: D, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3595AUR-1 8912-lds-0073-datasheet Microsemi Corporation Description: DIODE GP 125V 150MA DO213AA
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Bulk
Part Status: Active
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3595AUR-1 8912-lds-0073-datasheet Microsemi Corporation Description: DIODE GP 125V 150MA DO213AA
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2nA @ 125V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6630 10973-sa7-57-datasheet Microsemi Corporation Description: DIODE GEN PURP 900V 1.4A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: E, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 900V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 900V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6621US Microsemi Corporation Description: DIODE GEN PURP 440V 2A D5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 75V
Reverse Recovery Time (trr): 20ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6623US Microsemi Corporation Description: DIODE GEN PURP 880V 1A D5A
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 880V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 880V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6624US Microsemi Corporation Description: DIODE GEN PURP 990V 1A D5A
Current - Reverse Leakage @ Vr: 500nA @ 990V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 990V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6625US Microsemi Corporation Description: DIODE GEN PURP 1.1KV 1A D5A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N3595AUR-1 8912-lds-0073-datasheet Microsemi Corporation Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 2nA @ 125V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N3595AUS Microsemi Corporation Description: DIODE GEN PURP 125V 150MA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Part Status: Active
Current - Reverse Leakage @ Vr: 2nA @ 125V
Packaging: Bulk
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6661 11106-sd87a-datasheet Microsemi Corporation Description: DIODE GEN PURP 225V 500MA DO35
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 225V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50nA @ 225V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 46 Stücke - Preis und Lieferfrist anzeigen
1N4458 8952-lds-0139-datasheet Microsemi Corporation Description: DIODE GEN PURP 800V 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6621U Microsemi Corporation Description: DIODE GEN PURP 400V 1.2A A-MELF
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500nA @ 400V
Reverse Recovery Time (trr): 30ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6622U Microsemi Corporation Description: DIODE GEN PURP 600V 1.2A A-MELF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500nA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4458R 8952-lds-0139-datasheet Microsemi Corporation Description: DIODE GEN PURP 800V 15A DO203AA
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4459R 8952-lds-0139-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N3595UR-1 8840-lds-0027-pdf Microsemi Corporation Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 2nA @ 125V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4153UR-1 5812-1n4153ur-datasheet Microsemi Corporation Description: DIODE GEN PURP 50V 150MA DO213AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100µA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6630 10973-sa7-57-datasheet Microsemi Corporation Description: DIODE GEN PURP 900V 1.4A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 900V
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: E-PAK
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6630US 11069-sd53a-datasheet Microsemi Corporation Description: DIODE GEN PURP 900V 1.4A E-MELF
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 900V
Part Status: Active
Diode Type: Standard
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 900V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6631US JAN1N6631US Microsemi Corporation Description: DIODE GEN PURP 1.1KV 1.4A D5B
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3645 10953-lds-0266-datasheet Microsemi Corporation Description: DIODE GEN PURP 2KV 250MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 2000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 2000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6630US 11069-sd53a-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 1.4A E-MELF
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 1000V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6631US Microsemi Corporation Description: DIODE GEN PURP 1.1KV 1.4A D5B
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N4153-1 5810-1n4153-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 50V 150MA DO35
Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N1190 8951-lds-0138-pdf Microsemi Corporation Description: DIODE GEN PURP 600V 35A DO203AB
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N1204A 8949-lds-0136-pdf Microsemi Corporation Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1300 Stücke - Preis und Lieferfrist anzeigen
JAN1N1204AR 8949-lds-0136-pdf Microsemi Corporation Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4458 8952-lds-0139-datasheet Microsemi Corporation Description: DIODE GEN PURP 800V 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4459 8952-lds-0139-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 15A DO203AA
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N1204A 8949-lds-0136-pdf Microsemi Corporation Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4458R 8952-lds-0139-datasheet Microsemi Corporation Description: DIODE GEN PURP 800V 15A DO203AA
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4459R 8952-lds-0139-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 15A DO203AA
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N1204AR 8949-lds-0136-pdf Microsemi Corporation Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4458 8952-lds-0139-datasheet Microsemi Corporation Description: DIODE GEN PURP 800V 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4459 8952-lds-0139-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4458R 8952-lds-0139-datasheet Microsemi Corporation Description: DIODE GEN PURP 800V 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4459R 8952-lds-0139-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N1190R 8951-lds-0138-pdf Microsemi Corporation Description: DIODE GEN PURP 600V 35A DO203AB
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N649UR-1 5890-1n649ur-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 400MA DO213
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50nA @ 600V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6661US JAN1N6661US Microsemi Corporation Description: DIODE GEN PURP 225V 500MA D5A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N1190 8951-lds-0138-pdf Microsemi Corporation Description: DIODE GEN PURP 600V 35A DO203AB
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10µA @ 600V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N1190R 8951-lds-0138-pdf Microsemi Corporation Description: DIODE GEN PURP 600V 35A DO203AB
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N4153UR-1 5812-1n4153ur-datasheet Microsemi Corporation Description: DIODE GEN PURP 50V 150MA DO213AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6661US JANTX1N6661US 11107-sd88a-datasheet Microsemi Corporation Description: DIODE GEN PURP 225V 500MA D5A
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS1N6661US 11107-sd88a-datasheet Microsemi Corporation Description: DIODE GEN PURP 225V 500MA D5D
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3893 8956-lds-0143-pdf Microsemi Corporation Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 38A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3910A 8957-lds-0144-pdf Microsemi Corporation Description: DIODE GEN PURP 100V 50A DO203AB
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-203AB (DO-5)
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 15µA @ 100V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT40SM120S APT40SM120S 133871-apt40sm120b-datasheet Microsemi Corporation Description: MOSFET N-CH 1200V 41A D3PAK
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
Part Status: Obsolete
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs (Max): +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Power Dissipation (Max): 273W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT40SM120J APT40SM120J APT40SM120J.pdf Microsemi Corporation Description: MOSFET N-CH 1200V 32A SOT227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Power Dissipation (Max): 165W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Vgs (Max): +25V, -10V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: SOT-227
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
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APT40SM120B APT40SM120B 133871-apt40sm120b-datasheet Microsemi Corporation Description: MOSFET N-CH 1200V 41A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Vgs (Max): +25V, -10V
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 273W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5225A(DO-35) 1N5225A(DO-35) 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Microsemi Corporation Description: DIODE ZENER 3V 500MW DO35
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 50µA @ 1V
Impedance (Max) (Zzt): 29 Ohms
Power - Max: 500mW
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 3V
Part Status: Discontinued at Digi-Key
Packaging: Bag
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N753A-1TR Microsemi Corporation Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 3 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 6.2V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4764AP/TR8 1N4764AP/TR8 10911-sa5-33-datasheet Microsemi Corporation Description: DIODE ZENER 100V 1W DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 76V
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 350 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N986B-1E3 1N986B-1E3 125314-lds-0287-datasheet Microsemi Corporation Description: DIODE ZENER 110V 500MW DO35
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 750 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 83.6V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMDA15C-5 SMDA15C-5 SMDA03%20thru%2024C,%20SMDB03%20thru%2024C.pdf Microsemi Corporation Description: TVS DIODE 15VWM 30VC 8-SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Type: Zener
Bidirectional Channels: 5
Voltage - Reverse Standoff (Typ): 15V
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Power - Peak Pulse: 300W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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1N5379B/TR12 1N5379B/TR12 1N5333B-88B.pdf Microsemi Corporation Description: DIODE ZENER 110V 5W T18
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Reverse Leakage @ Vr: 500nA @ 79.2V
Impedance (Max) (Zzt): 125 Ohms
Power - Max: 5W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 110V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5385B/TR12 1N5333B-88B.pdf Microsemi Corporation Description: DIODE ZENER 170V 5W AXIAL
Voltage - Zener (Nom) (Vz): 170V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: Axial
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Reverse Leakage @ Vr: 500nA @ 122V
Impedance (Max) (Zzt): 380 Ohms
Tolerance: ±5%
Power - Max: 5W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N748A-1 JAN1N748A-1 5906-1n746-759a-4370-4372a-datasheet Microsemi Corporation Description: DIODE ZENER 3.9V 500MW DO35
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 23 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6193U3
Hersteller: Microsemi Corporation
Description: TRANS PNP 100V 5A TO-39
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6211
Hersteller: Microsemi Corporation
Description: TRANS PNP 225V 2A TO-66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 225 V
Power - Max: 3 W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
JANTX2N3439U4
Hersteller: Microsemi Corporation
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N6211
Hersteller: Microsemi Corporation
Description: TRANS PNP 225V 2A TO-66
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 225V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
Power - Max: 3W
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JANTXV2N3467
Hersteller: Microsemi Corporation
Description: TRANS PNP 40V 1A TO-3
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 1A
Transistor Type: PNP
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N4399
Hersteller: Microsemi Corporation
Description: TRANS PNP 60V 30A TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-3 (TO-204AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Current - Collector Cutoff (Max): 100µA
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30A
Transistor Type: PNP
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature: -55°C ~ 200°C (TJ)
Power - Max: 5W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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JAN2N6250T1 123514-lds-0197-datasheet
Hersteller: Microsemi Corporation
Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N3251AUB 8919-lds-0093-datasheet
Hersteller: Microsemi Corporation
Description: TRANS PNP 60V 0.2A TO-39
Current - Collector (Ic) (Max): 200mA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: UB
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN2N5671
Hersteller: Microsemi Corporation
Description: TRANS NPN 90V 30A TO-3
Supplier Device Package: TO-3 (TO-204AA)
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V
Current - Collector Cutoff (Max): 10mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Voltage - Collector Emitter Breakdown (Max): 90V
Current - Collector (Ic) (Max): 30A
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 80 Stücke - Preis und Lieferfrist anzeigen
JANTX2N5672
Hersteller: Microsemi Corporation
Description: TRANS NPN 120V 30A TO-3
Supplier Device Package: TO-3 (TO-204AA)
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V
Current - Collector Cutoff (Max): 10mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 30A
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
JANTXV2N3251AUB 8919-lds-0093-datasheet
Hersteller: Microsemi Corporation
Description: TRANS PNP 60V 0.2A TO-39
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: UB
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 200mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6250T1 123514-lds-0197-datasheet
Hersteller: Microsemi Corporation
Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N2432 6026-2n2432-datasheet
Hersteller: Microsemi Corporation
Description: TRANS NPN 30V 0.1A
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Power - Max: 300mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8400 Stücke - Preis und Lieferfrist anzeigen
JANTXV2N6250T1 123514-lds-0197-datasheet
Hersteller: Microsemi Corporation
Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N3439UA 125353-lds-0022-3-datasheet
Hersteller: Microsemi Corporation
Description: TRANS NPN 350V 1A UA
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Power - Max: 800 mW
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
JAN2N6249T1 123514-lds-0197-datasheet
Hersteller: Microsemi Corporation
Description: TRANS NPN 200V 10A TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX2N6249T1 123514-lds-0197-datasheet
Hersteller: Microsemi Corporation
Description: TRANS NPN 200V 10A TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N6193
Hersteller: Microsemi Corporation
Description: TRANS PNP 100V 5A TO-39
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 5A
Transistor Type: PNP
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV2N6249T1 123514-lds-0197-datasheet
JANTXV2N6249T1
Hersteller: Microsemi Corporation
Description: TRANS NPN 200V 10A TO-3
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N3439U4
Hersteller: Microsemi Corporation
Description: TRANS NPN 350V 1A UA
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N5666U3 8902-lds-0062-pdf
Hersteller: Microsemi Corporation
Description: TRANS NPN 200V 5A TO-66
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Current - Collector Cutoff (Max): 200nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 5A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Supplier Device Package: U3
Package / Case: 3-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N6249T1 123514-lds-0197-datasheet
Hersteller: Microsemi Corporation
Description: TRANS NPN 200V 10A TO-3
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS2N6250T1 123514-lds-0197-datasheet
Hersteller: Microsemi Corporation
Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6316CUS 11083-lds-0193-1-datasheet
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANS1N6316C 10924-lds-0193-datasheet
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: B, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
2N3507AU4 124386-lds-0016-2
Hersteller: Microsemi Corporation
Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Power - Max: 1W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
LX7157BCLD 124259-lx7157b-datasheet
Hersteller: Microsemi Corporation
Description: IC REG BUCK ADJUSTABLE 3A 12DFN
Supplier Device Package: 12-DFN-EP (3x3.5)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -10°C ~ 85°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 2.2MHz
Current - Output: 3A
Voltage - Output (Max): 1.8V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 5.5V
Voltage - Input (Min): 3V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5940B 10922-sa5-57-datasheet
Hersteller: Microsemi Corporation
Description: ZENER DIODE
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
LX7104ISF 124253-lx7104-datasheet
LX7104ISF
Hersteller: Microsemi Corporation
Description: IC REG BUCK ADJ 1.5A SOT23-6
Packaging: Bulk
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 18V
Voltage - Output (Min/Fixed): 0.81V
Voltage - Output (Max): 15V
Current - Output: 1.5A
Frequency - Switching: 1.4MHz
Synchronous Rectifier: No
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5258A (DO-35) 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5258A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 36V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3595A-1 8911-lds-0072-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 150MA DO35
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3595A-1 8911-lds-0072-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 150MA DO35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: DO-35
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N3595A-1 8911-lds-0072-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 150MA DO35
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Through Hole
Packaging: Bulk
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3595UR-1 8840-lds-0027-pdf
Hersteller: Microsemi Corporation
Description: DIODE GP 125V 150MA DO213AA
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1nA @ 125V
Reverse Recovery Time (trr): 3µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6638 125437-lds-0218-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: D, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6639 5896-1n6639-40-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 75V 300MA AXIAL
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5D
Package / Case: D, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100nA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6639 5896-1n6639-40-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 75V 300MA AXIAL
Current - Reverse Leakage @ Vr: 100µA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA
Current - Average Rectified (Io): 300mA (DC)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5D
Package / Case: D, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3595AUS
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 150MA
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5248BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5248BDO35
Hersteller: Microsemi Corporation
Description: DIODE ZENER 18V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6638US 5895-1n6638-42-43us-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 300MA D-MELF
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6638 125437-lds-0218-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-Pak
Package / Case: D, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 125V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 150 Stücke - Preis und Lieferfrist anzeigen
JANTXV1N6639 5896-1n6639-40-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 75V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Reverse Leakage @ Vr: 100nA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-Pak
Package / Case: D, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3595AUR-1 8912-lds-0073-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GP 125V 150MA DO213AA
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Bulk
Part Status: Active
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3595AUR-1 8912-lds-0073-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GP 125V 150MA DO213AA
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2nA @ 125V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6630 10973-sa7-57-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 900V 1.4A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: E, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 900V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 900V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6621US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 440V 2A D5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 75V
Reverse Recovery Time (trr): 20ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6623US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 880V 1A D5A
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 880V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 880V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6624US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 990V 1A D5A
Current - Reverse Leakage @ Vr: 500nA @ 990V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 990V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6625US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.1KV 1A D5A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N3595AUR-1 8912-lds-0073-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 2nA @ 125V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N3595AUS
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 150MA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Part Status: Active
Current - Reverse Leakage @ Vr: 2nA @ 125V
Packaging: Bulk
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6661 11106-sd87a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 225V 500MA DO35
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 225V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50nA @ 225V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 46 Stücke - Preis und Lieferfrist anzeigen
1N4458 8952-lds-0139-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6621U
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 1.2A A-MELF
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500nA @ 400V
Reverse Recovery Time (trr): 30ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6622U
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1.2A A-MELF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500nA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4458R 8952-lds-0139-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N4459R 8952-lds-0139-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N3595UR-1 8840-lds-0027-pdf
Hersteller: Microsemi Corporation
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 2nA @ 125V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4153UR-1 5812-1n4153ur-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 50V 150MA DO213AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100µA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6630 10973-sa7-57-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 900V 1.4A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 900V
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: E-PAK
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6630US 11069-sd53a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 900V 1.4A E-MELF
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 900V
Part Status: Active
Diode Type: Standard
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 900V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6631US
JAN1N6631US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.1KV 1.4A D5B
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N3645 10953-lds-0266-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 2KV 250MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 2000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 2000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6630US 11069-sd53a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1.4A E-MELF
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 1000V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6631US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.1KV 1.4A D5B
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N4153-1 5810-1n4153-1-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 50V 150MA DO35
Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N1190 8951-lds-0138-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N1204A 8949-lds-0136-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1300 Stücke - Preis und Lieferfrist anzeigen
JAN1N1204AR 8949-lds-0136-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4458 8952-lds-0139-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4459 8952-lds-0139-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 15A DO203AA
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N1204A 8949-lds-0136-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4458R 8952-lds-0139-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N4459R 8952-lds-0139-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 15A DO203AA
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N1204AR 8949-lds-0136-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4458 8952-lds-0139-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4459 8952-lds-0139-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4458R 8952-lds-0139-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N4459R 8952-lds-0139-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N1190R 8951-lds-0138-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N649UR-1 5890-1n649ur-1-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 400MA DO213
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50nA @ 600V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6661US
JAN1N6661US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 225V 500MA D5A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N1190 8951-lds-0138-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10µA @ 600V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N1190R 8951-lds-0138-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N4153UR-1 5812-1n4153ur-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 50V 150MA DO213AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
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JANTX1N6661US 11107-sd88a-datasheet
JANTX1N6661US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 225V 500MA D5A
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
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JANS1N6661US 11107-sd88a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 225V 500MA D5D
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
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JANTX1N3893 8956-lds-0143-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 38A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
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JANTX1N3910A 8957-lds-0144-pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 100V 50A DO203AB
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-203AB (DO-5)
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 15µA @ 100V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
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APT40SM120S 133871-apt40sm120b-datasheet
APT40SM120S
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 41A D3PAK
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
Part Status: Obsolete
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs (Max): +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Power Dissipation (Max): 273W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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APT40SM120J APT40SM120J.pdf
APT40SM120J
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 32A SOT227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Power Dissipation (Max): 165W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Vgs (Max): +25V, -10V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: SOT-227
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
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APT40SM120B 133871-apt40sm120b-datasheet
APT40SM120B
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 41A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Vgs (Max): +25V, -10V
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 273W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5225A(DO-35) 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5225A(DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3V 500MW DO35
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 50µA @ 1V
Impedance (Max) (Zzt): 29 Ohms
Power - Max: 500mW
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 3V
Part Status: Discontinued at Digi-Key
Packaging: Bag
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
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1N753A-1TR
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 3 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 6.2V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
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1N4764AP/TR8 10911-sa5-33-datasheet
1N4764AP/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1W DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 76V
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 350 Ohms
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1N986B-1E3 125314-lds-0287-datasheet
1N986B-1E3
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 500MW DO35
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 750 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 83.6V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMDA15C-5 SMDA03%20thru%2024C,%20SMDB03%20thru%2024C.pdf
SMDA15C-5
Hersteller: Microsemi Corporation
Description: TVS DIODE 15VWM 30VC 8-SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Type: Zener
Bidirectional Channels: 5
Voltage - Reverse Standoff (Typ): 15V
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Power - Peak Pulse: 300W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
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auf Bestellung 1805 Stücke - Preis und Lieferfrist anzeigen
1N5379B/TR12 1N5333B-88B.pdf
1N5379B/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 5W T18
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Reverse Leakage @ Vr: 500nA @ 79.2V
Impedance (Max) (Zzt): 125 Ohms
Power - Max: 5W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 110V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
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1N5385B/TR12 1N5333B-88B.pdf
Hersteller: Microsemi Corporation
Description: DIODE ZENER 170V 5W AXIAL
Voltage - Zener (Nom) (Vz): 170V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: Axial
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Reverse Leakage @ Vr: 500nA @ 122V
Impedance (Max) (Zzt): 380 Ohms
Tolerance: ±5%
Power - Max: 5W
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JAN1N748A-1 5906-1n746-759a-4370-4372a-datasheet
JAN1N748A-1
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 23 Ohms
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