Die Produkte microsemi corporation
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
|---|---|---|---|---|---|---|
| JANTXV2N6193U3 | Microsemi Corporation |
Description: TRANS PNP 100V 5A TO-39 Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| JANTX2N6211 | Microsemi Corporation |
Description: TRANS PNP 225V 2A TO-66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 225 V Power - Max: 3 W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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| JANTX2N3439U4 | Microsemi Corporation |
Description: TRANS NPN 350V 1A UA Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| JAN2N6211 | Microsemi Corporation |
Description: TRANS PNP 225V 2A TO-66 Packaging: Bulk Part Status: Discontinued at Digi-Key Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 225V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V Power - Max: 3W Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66 (TO-213AA) Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2280 Stücke - Preis und Lieferfrist anzeigen
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| JANTXV2N3467 | Microsemi Corporation |
Description: TRANS PNP 40V 1A TO-3 Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A Voltage - Collector Emitter Breakdown (Max): 40V Current - Collector (Ic) (Max): 1A Transistor Type: PNP Part Status: Discontinued at Digi-Key Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| JANTXV2N4399 | Microsemi Corporation |
Description: TRANS PNP 60V 30A TO-3 Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Supplier Device Package: TO-3 (TO-204AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Current - Collector Cutoff (Max): 100µA Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 30A Transistor Type: PNP Part Status: Discontinued at Digi-Key Packaging: Bulk Operating Temperature: -55°C ~ 200°C (TJ) Power - Max: 5W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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| JAN2N6250T1 |
|
Microsemi Corporation |
Description: TRANS NPN 275V 10A TO-3 Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A Voltage - Collector Emitter Breakdown (Max): 275V Current - Collector (Ic) (Max): 10A Transistor Type: NPN Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX2N3251AUB |
|
Microsemi Corporation |
Description: TRANS PNP 60V 0.2A TO-39 Current - Collector (Ic) (Max): 200mA Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Supplier Device Package: UB Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Part Status: Obsolete Packaging: Bulk Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 360mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 60V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN2N5671 | Microsemi Corporation |
Description: TRANS NPN 90V 30A TO-3 Supplier Device Package: TO-3 (TO-204AA) Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V Current - Collector Cutoff (Max): 10mA Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A Voltage - Collector Emitter Breakdown (Max): 90V Current - Collector (Ic) (Max): 30A Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 80 Stücke - Preis und Lieferfrist anzeigen
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| JANTX2N5672 | Microsemi Corporation |
Description: TRANS NPN 120V 30A TO-3 Supplier Device Package: TO-3 (TO-204AA) Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V Current - Collector Cutoff (Max): 10mA Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A Voltage - Collector Emitter Breakdown (Max): 120V Current - Collector (Ic) (Max): 30A Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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| JANTXV2N3251AUB |
|
Microsemi Corporation |
Description: TRANS PNP 60V 0.2A TO-39 Transistor Type: PNP Part Status: Obsolete Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Supplier Device Package: UB Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 360mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 200mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX2N6250T1 |
|
Microsemi Corporation |
Description: TRANS NPN 275V 10A TO-3 Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A Voltage - Collector Emitter Breakdown (Max): 275V Current - Collector (Ic) (Max): 10A Transistor Type: NPN Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX2N2432 |
|
Microsemi Corporation |
Description: TRANS NPN 30V 0.1A Packaging: Bulk Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Power - Max: 300mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA) Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8400 Stücke - Preis und Lieferfrist anzeigen
|
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| JANTXV2N6250T1 |
|
Microsemi Corporation |
Description: TRANS NPN 275V 10A TO-3 Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A Voltage - Collector Emitter Breakdown (Max): 275V Current - Collector (Ic) (Max): 10A Transistor Type: NPN Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANS2N3439UA |
|
Microsemi Corporation |
Description: TRANS NPN 350V 1A UA Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: UA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 2µA Power - Max: 800 mW Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
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| JAN2N6249T1 |
|
Microsemi Corporation |
Description: TRANS NPN 200V 10A TO-3 Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A Voltage - Collector Emitter Breakdown (Max): 200V Current - Collector (Ic) (Max): 10A Transistor Type: NPN Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX2N6249T1 |
|
Microsemi Corporation |
Description: TRANS NPN 200V 10A TO-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A Voltage - Collector Emitter Breakdown (Max): 200V Current - Collector (Ic) (Max): 10A Transistor Type: NPN Part Status: Active Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANS2N6193 | Microsemi Corporation |
Description: TRANS PNP 100V 5A TO-39 Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Voltage - Collector Emitter Breakdown (Max): 100V Current - Collector (Ic) (Max): 5A Transistor Type: PNP Part Status: Active Packaging: Bulk Supplier Device Package: TO-39 (TO-205AD) Package / Case: TO-205AD, TO-39-3 Metal Can |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
 |
JANTXV2N6249T1 |
|
Microsemi Corporation |
Description: TRANS NPN 200V 10A TO-3 Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A Voltage - Collector Emitter Breakdown (Max): 200V Current - Collector (Ic) (Max): 10A Transistor Type: NPN Part Status: Active Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| JANS2N3439U4 | Microsemi Corporation |
Description: TRANS NPN 350V 1A UA Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| JANS2N5666U3 |
|
Microsemi Corporation |
Description: TRANS NPN 200V 5A TO-66 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Current - Collector Cutoff (Max): 200nA Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Voltage - Collector Emitter Breakdown (Max): 200V Current - Collector (Ic) (Max): 5A Transistor Type: NPN Part Status: Active Packaging: Bulk Supplier Device Package: U3 Package / Case: 3-SMD, Flat Lead |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANS2N6249T1 |
|
Microsemi Corporation |
Description: TRANS NPN 200V 10A TO-3 Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Supplier Device Package: TO-254AA Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A Voltage - Collector Emitter Breakdown (Max): 200V Current - Collector (Ic) (Max): 10A Transistor Type: NPN Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANS2N6250T1 |
|
Microsemi Corporation |
Description: TRANS NPN 275V 10A TO-3 Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 6W DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A Voltage - Collector Emitter Breakdown (Max): 275V Current - Collector (Ic) (Max): 10A Transistor Type: NPN Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N6316CUS |
|
Microsemi Corporation |
Description: VOLTAGE REGULATOR Supplier Device Package: B, SQ-MELF Package / Case: SQ-MELF, B Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A Current - Reverse Leakage @ Vr: 5µA @ 1.5V Impedance (Max) (Zzt): 17 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 4.7V Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANS1N6316C |
|
Microsemi Corporation |
Description: VOLTAGE REGULATOR Supplier Device Package: DO-35 (DO-204AH) Package / Case: B, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A Current - Reverse Leakage @ Vr: 5µA @ 1.5V Impedance (Max) (Zzt): 17 Ohms Power - Max: 500mW Tolerance: ±2% Voltage - Zener (Nom) (Vz): 4.7V Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 2N3507AU4 |
|
Microsemi Corporation |
Description: NPN TRANSISTOR Packaging: Bulk Part Status: Active Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| LX7157BCLD |
|
Microsemi Corporation |
Description: IC REG BUCK ADJUSTABLE 3A 12DFN Supplier Device Package: 12-DFN-EP (3x3.5) Package / Case: 12-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -10°C ~ 85°C (TA) Synchronous Rectifier: Yes Frequency - Switching: 2.2MHz Current - Output: 3A Voltage - Output (Max): 1.8V Voltage - Output (Min/Fixed): 0.8V Voltage - Input (Max): 5.5V Voltage - Input (Min): 3V Number of Outputs: 1 Output Type: Adjustable Topology: Buck Output Configuration: Positive Function: Step-Down Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 1N5940B |
|
Microsemi Corporation |
Description: ZENER DIODE Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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 |
LX7104ISF |
|
Microsemi Corporation |
Description: IC REG BUCK ADJ 1.5A SOT23-6 Packaging: Bulk Part Status: Active Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 4.5V Voltage - Input (Max): 18V Voltage - Output (Min/Fixed): 0.81V Voltage - Output (Max): 15V Current - Output: 1.5A Frequency - Switching: 1.4MHz Synchronous Rectifier: No Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
1N5258A (DO-35) |
|
Microsemi Corporation |
Description: DIODE ZENER 36V 500MW DO35 Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 Impedance (Max) (Zzt): 70 Ohms Voltage - Zener (Nom) (Vz): 36 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±10% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 nA @ 27 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| JAN1N3595A-1 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 125V 150MA DO35 Current - Reverse Leakage @ Vr: 2nA @ 125V Reverse Recovery Time (trr): 3µs Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 125V Diode Type: Standard Part Status: Active Packaging: Bulk Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N3595A-1 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 125V 150MA DO35 Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Supplier Device Package: DO-35 Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Bulk Current - Reverse Leakage @ Vr: 2nA @ 125V Reverse Recovery Time (trr): 3µs Speed: Small Signal =< 200mA (Io), Any Speed Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Voltage - DC Reverse (Vr) (Max): 125V Diode Type: Standard Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N3595A-1 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 125V 150MA DO35 Current - Reverse Leakage @ Vr: 2nA @ 125V Reverse Recovery Time (trr): 3µs Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 125V Diode Type: Standard Part Status: Active Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Mounting Type: Through Hole Packaging: Bulk Supplier Device Package: DO-35 Package / Case: DO-204AH, DO-35, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N3595UR-1 |
|
Microsemi Corporation |
Description: DIODE GP 125V 150MA DO213AA Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 125V Diode Type: Standard Part Status: Active Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AA Package / Case: DO-213AA Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 1nA @ 125V Reverse Recovery Time (trr): 3µs |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N6638 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 150V 300MA AXIAL Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Package / Case: D, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 500nA @ 150V Reverse Recovery Time (trr): 20ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Average Rectified (Io): 300mA Voltage - DC Reverse (Vr) (Max): 150V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N6639 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 75V 300MA AXIAL Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-5D Package / Case: D, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 100nA @ 75V Reverse Recovery Time (trr): 4ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA Current - Average Rectified (Io): 300mA Voltage - DC Reverse (Vr) (Max): 75V Diode Type: Standard Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N6639 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 75V 300MA AXIAL Current - Reverse Leakage @ Vr: 100µA @ 75V Reverse Recovery Time (trr): 4ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA Current - Average Rectified (Io): 300mA (DC) Voltage - DC Reverse (Vr) (Max): 75V Diode Type: Standard Part Status: Active Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-5D Package / Case: D, Axial Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N3595AUS | Microsemi Corporation |
Description: DIODE GEN PURP 125V 150MA Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 2nA @ 125V Reverse Recovery Time (trr): 3µs Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 125V Diode Type: Standard Part Status: Active Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-35 Package / Case: DO-204AH, DO-35, Axial |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
|
|
1N5248BDO35 |
|
Microsemi Corporation |
Description: DIODE ZENER 18V 500MW DO35 Current - Reverse Leakage @ Vr: 100 nA @ 14 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Reel (TR) Supplier Device Package: DO-35 Impedance (Max) (Zzt): 21 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| JAN1N6638US |
|
Microsemi Corporation |
Description: DIODE GEN PURP 150V 300MA D-MELF Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Average Rectified (Io): 300mA Voltage - DC Reverse (Vr) (Max): 150V Diode Type: Standard Part Status: Active Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: B, SQ-MELF Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 500nA @ 150V Reverse Recovery Time (trr): 20ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N6638 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 125V 300MA AXIAL Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-Pak Package / Case: D, Axial Mounting Type: Through Hole Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 500nA @ 125V Reverse Recovery Time (trr): 20ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Average Rectified (Io): 300mA Voltage - DC Reverse (Vr) (Max): 125V Diode Type: Standard Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 150 Stücke - Preis und Lieferfrist anzeigen
|
||
| JANTXV1N6639 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 75V 300MA AXIAL Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Current - Reverse Leakage @ Vr: 100nA @ 75V Reverse Recovery Time (trr): 4ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA Current - Average Rectified (Io): 300mA Voltage - DC Reverse (Vr) (Max): 75V Diode Type: Standard Part Status: Active Packaging: Bulk Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-Pak Package / Case: D, Axial Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N3595AUR-1 |
|
Microsemi Corporation |
Description: DIODE GP 125V 150MA DO213AA Current - Reverse Leakage @ Vr: 2nA @ 125V Reverse Recovery Time (trr): 3µs Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 125V Diode Type: Standard Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Packaging: Bulk Part Status: Active Supplier Device Package: DO-213AA Package / Case: DO-213AA Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N3595AUR-1 |
|
Microsemi Corporation |
Description: DIODE GP 125V 150MA DO213AA Reverse Recovery Time (trr): 3µs Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 125V Diode Type: Standard, Reverse Polarity Part Status: Active Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AA Package / Case: DO-213AA Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 2nA @ 125V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N6630 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 900V 1.4A AXIAL Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 150°C Package / Case: E, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 2µA @ 900V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A Current - Average Rectified (Io): 1.4A Voltage - DC Reverse (Vr) (Max): 900V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N6621US | Microsemi Corporation |
Description: DIODE GEN PURP 440V 2A D5A Package / Case: SQ-MELF, A Mounting Type: Surface Mount Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz Current - Reverse Leakage @ Vr: 500nA @ 75V Reverse Recovery Time (trr): 20ns Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Current - Average Rectified (Io): 200mA Voltage - DC Reverse (Vr) (Max): 75V Diode Type: Standard Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 200°C Supplier Device Package: D-5A Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| JAN1N6623US | Microsemi Corporation |
Description: DIODE GEN PURP 880V 1A D5A Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: D-5A Package / Case: SQ-MELF, A Mounting Type: Surface Mount Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Reverse Leakage @ Vr: 500nA @ 880V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 880V Diode Type: Standard Part Status: Active Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| JAN1N6624US | Microsemi Corporation |
Description: DIODE GEN PURP 990V 1A D5A Current - Reverse Leakage @ Vr: 500nA @ 990V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 990V Diode Type: Standard Part Status: Active Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: D-5A Package / Case: SQ-MELF, A Mounting Type: Surface Mount Capacitance @ Vr, F: 10pF @ 10V, 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| JAN1N6625US | Microsemi Corporation |
Description: DIODE GEN PURP 1.1KV 1A D5A Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: D-5A Package / Case: SQ-MELF, A Mounting Type: Surface Mount Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Reverse Leakage @ Vr: 1µA @ 1100V Reverse Recovery Time (trr): 60ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 1100V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| JANTXV1N3595AUR-1 |
|
Microsemi Corporation |
Description: DIODE GP 125V 150MA DO213AA Packaging: Bulk Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 2nA @ 125V Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N3595AUS | Microsemi Corporation |
Description: DIODE GEN PURP 125V 150MA Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AA Voltage - DC Reverse (Vr) (Max): 125V Diode Type: Standard Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Part Status: Active Current - Reverse Leakage @ Vr: 2nA @ 125V Packaging: Bulk Reverse Recovery Time (trr): 3µs Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Current - Average Rectified (Io): 150mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| JANTX1N6661 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 225V 500MA DO35 Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 225V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 50nA @ 225V Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 46 Stücke - Preis und Lieferfrist anzeigen
|
||
| 1N4458 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 800V 15A DO203AA Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-203AA (DO-4) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Current - Average Rectified (Io): 15A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Active Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Packaging: Bulk Current - Reverse Leakage @ Vr: 50µA @ 800V Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N6621U | Microsemi Corporation |
Description: DIODE GEN PURP 400V 1.2A A-MELF Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: D-5A Package / Case: SQ-MELF, A Mounting Type: Surface Mount Current - Average Rectified (Io): 1.2A Voltage - DC Reverse (Vr) (Max): 400V Diode Type: Standard Part Status: Active Packaging: Bulk Current - Reverse Leakage @ Vr: 500nA @ 400V Reverse Recovery Time (trr): 30ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| JANTX1N6622U | Microsemi Corporation |
Description: DIODE GEN PURP 600V 1.2A A-MELF Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: D-5A Package / Case: SQ-MELF, A Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 500nA @ 600V Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Current - Average Rectified (Io): 1.2A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| 1N4458R |
|
Microsemi Corporation |
Description: DIODE GEN PURP 800V 15A DO203AA Mounting Type: Chassis, Stud Mount Current - Reverse Leakage @ Vr: 50µA @ 800V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Current - Average Rectified (Io): 15A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard, Reverse Polarity Part Status: Active Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-203AA (DO-4) Package / Case: DO-203AA, DO-4, Stud |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| 1N4459R |
|
Microsemi Corporation |
Description: DIODE GEN PURP 1KV 15A DO203AA Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-203AA (DO-4) Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Current - Reverse Leakage @ Vr: 50µA @ 1000V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Current - Average Rectified (Io): 15A Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard, Reverse Polarity Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N3595UR-1 |
|
Microsemi Corporation |
Description: DIODE GP 125V 150MA DO213AA Packaging: Bulk Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 2nA @ 125V Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N4153UR-1 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 50V 150MA DO213AA Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 100µA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N6630 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 900V 1.4A AXIAL Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 2µA @ 900V Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: E-PAK Operating Temperature - Junction: -65°C ~ 150°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N6630US |
|
Microsemi Corporation |
Description: DIODE GEN PURP 900V 1.4A E-MELF Current - Average Rectified (Io): 1.4A Voltage - DC Reverse (Vr) (Max): 900V Part Status: Active Diode Type: Standard Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 2µA @ 900V Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
 |
JAN1N6631US | Microsemi Corporation |
Description: DIODE GEN PURP 1.1KV 1.4A D5B Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1100V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 4µA @ 1100V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: E-MELF Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N3645 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 2KV 250MA AXIAL Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: S, Axial Package / Case: S, Axial Mounting Type: Through Hole Current - Reverse Leakage @ Vr: 5µA @ 2000V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA Current - Average Rectified (Io): 250mA Voltage - DC Reverse (Vr) (Max): 2000V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N6630US |
|
Microsemi Corporation |
Description: DIODE GEN PURP 1KV 1.4A E-MELF Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 2µA @ 1000V Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N6631US | Microsemi Corporation |
Description: DIODE GEN PURP 1.1KV 1.4A D5B Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1100V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 4µA @ 1100V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: E-MELF Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| JANTXV1N4153-1 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 50V 150MA DO35 Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA Current - Average Rectified (Io): 150mA Voltage - DC Reverse (Vr) (Max): 50V Diode Type: Standard Part Status: Active Packaging: Bulk Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N1190 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 600V 35A DO203AB Current - Reverse Leakage @ Vr: 10µA @ 600V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Current - Average Rectified (Io): 35A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Bulk Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-5 Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N1204A |
|
Microsemi Corporation |
Description: DIODE GEN PURP 400V 12A DO203AA Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5µA @ 400V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1300 Stücke - Preis und Lieferfrist anzeigen
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||
| JAN1N1204AR |
|
Microsemi Corporation |
Description: DIODE GEN PURP 400V 12A DO203AA Packaging: Bulk Part Status: Active Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5µA @ 400V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N4458 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 800V 15A DO203AA Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-203AA (DO-4) Package / Case: DO-203AA, DO-4, Stud Current - Reverse Leakage @ Vr: 50µA @ 800V Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Current - Average Rectified (Io): 15A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N4459 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 1KV 15A DO203AA Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard Part Status: Active Packaging: Bulk Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-203AA (DO-4) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Current - Reverse Leakage @ Vr: 50µA @ 1000V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Current - Average Rectified (Io): 15A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N1204A |
|
Microsemi Corporation |
Description: DIODE GEN PURP 400V 12A DO203AA Packaging: Bulk Part Status: Discontinued at Digi-Key Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5µA @ 400V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N4458R |
|
Microsemi Corporation |
Description: DIODE GEN PURP 800V 15A DO203AA Current - Average Rectified (Io): 15A Voltage - DC Reverse (Vr) (Max): 800V Diode Type: Standard, Reverse Polarity Part Status: Active Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-203AA (DO-4) Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Packaging: Bulk Current - Reverse Leakage @ Vr: 50µA @ 800V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N4459R |
|
Microsemi Corporation |
Description: DIODE GEN PURP 1KV 15A DO203AA Voltage - DC Reverse (Vr) (Max): 1000V Diode Type: Standard, Reverse Polarity Part Status: Active Packaging: Bulk Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Current - Average Rectified (Io): 15A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 50µA @ 1000V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N1204AR |
|
Microsemi Corporation |
Description: DIODE GEN PURP 400V 12A DO203AA Packaging: Bulk Part Status: Active Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5µA @ 400V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N4458 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 800V 15A DO203AA Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 50µA @ 800V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N4459 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 1KV 15A DO203AA Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 50µA @ 1000V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N4458R |
|
Microsemi Corporation |
Description: DIODE GEN PURP 800V 15A DO203AA Packaging: Bulk Part Status: Active Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 50µA @ 800V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N4459R |
|
Microsemi Corporation |
Description: DIODE GEN PURP 1KV 15A DO203AA Packaging: Bulk Part Status: Active Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 50µA @ 1000V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JAN1N1190R |
|
Microsemi Corporation |
Description: DIODE GEN PURP 600V 35A DO203AB Mounting Type: Chassis, Stud Mount Current - Reverse Leakage @ Vr: 10µA @ 600V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-5 Package / Case: DO-203AB, DO-5, Stud Current - Average Rectified (Io): 35A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard, Reverse Polarity Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N649UR-1 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 600V 400MA DO213 Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 50nA @ 600V Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
 |
JAN1N6661US | Microsemi Corporation |
Description: DIODE GEN PURP 225V 500MA D5A Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-5A Package / Case: SQ-MELF, A Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 50nA @ 225V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 225V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N1190 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 600V 35A DO203AB Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Current - Average Rectified (Io): 35A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Bulk Current - Reverse Leakage @ Vr: 10µA @ 600V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N1190R |
|
Microsemi Corporation |
Description: DIODE GEN PURP 600V 35A DO203AB Packaging: Bulk Part Status: Active Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 10µA @ 600V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTXV1N4153UR-1 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 50V 150MA DO213AA Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
|
|
JANTX1N6661US |
|
Microsemi Corporation |
Description: DIODE GEN PURP 225V 500MA D5A Supplier Device Package: D-5A Package / Case: SQ-MELF, A Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 50nA @ 225V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 225V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Bulk Operating Temperature - Junction: -65°C ~ 175°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| JANS1N6661US |
|
Microsemi Corporation |
Description: DIODE GEN PURP 225V 500MA D5D Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-5A Package / Case: SQ-MELF, A Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 50nA @ 225V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 225V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N3893 |
|
Microsemi Corporation |
Description: DIODE GEN PURP 400V 12A DO203AA Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 38A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 400V Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
| JANTX1N3910A |
|
Microsemi Corporation |
Description: DIODE GEN PURP 100V 50A DO203AB Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-203AB (DO-5) Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Current - Reverse Leakage @ Vr: 15µA @ 100V Reverse Recovery Time (trr): 200ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.4V @ 50A Current - Average Rectified (Io): 50A Voltage - DC Reverse (Vr) (Max): 100V Diode Type: Standard Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
 |
APT40SM120S |
|
Microsemi Corporation |
Description: MOSFET N-CH 1200V 41A D3PAK Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drain to Source Voltage (Vdss): 1200V Technology: SiCFET (Silicon Carbide) Part Status: Obsolete Packaging: Bulk Drive Voltage (Max Rds On, Min Rds On): 20V Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Vgs (Max): +25V, -10V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V Power Dissipation (Max): 273W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
APT40SM120J |
|
Microsemi Corporation |
Description: MOSFET N-CH 1200V 32A SOT227 Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Power Dissipation (Max): 165W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V Vgs (Max): +25V, -10V Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Vgs(th) (Max) @ Id: 3V @ 1mA (Typ) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: SOT-227 Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drain to Source Voltage (Vdss): 1200V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Bulk |
auf Bestellung 30 Stücke Lieferzeit 21-28 Tag (e) |
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APT40SM120B |
|
Microsemi Corporation |
Description: MOSFET N-CH 1200V 41A TO247 Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V Vgs (Max): +25V, -10V Package / Case: TO-247-3 Supplier Device Package: TO-247 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Vgs(th) (Max) @ Id: 3V @ 1mA (Typ) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Drive Voltage (Max Rds On, Min Rds On): 20V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drain to Source Voltage (Vdss): 1200V Technology: SiCFET (Silicon Carbide) Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
1N5225A(DO-35) |
|
Microsemi Corporation |
Description: DIODE ZENER 3V 500MW DO35 Operating Temperature: -65°C ~ 175°C Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA Current - Reverse Leakage @ Vr: 50µA @ 1V Impedance (Max) (Zzt): 29 Ohms Power - Max: 500mW Tolerance: ±10% Voltage - Zener (Nom) (Vz): 3V Part Status: Discontinued at Digi-Key Packaging: Bag Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14406 Stücke - Preis und Lieferfrist anzeigen
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| 1N753A-1TR | Microsemi Corporation |
Description: DIODE ZENER 6.2V 500MW DO35 Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 6.2V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 3 Ohms Current - Reverse Leakage @ Vr: 5µA @ 6.2V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
 |
1N4764AP/TR8 |
|
Microsemi Corporation |
Description: DIODE ZENER 100V 1W DO204AL Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Current - Reverse Leakage @ Vr: 5µA @ 76V Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Zener (Nom) (Vz): 100V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 350 Ohms |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
1N986B-1E3 |
|
Microsemi Corporation |
Description: DIODE ZENER 110V 500MW DO35 Packaging: Bulk Part Status: Discontinued at Digi-Key Voltage - Zener (Nom) (Vz): 110V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 750 Ohms Current - Reverse Leakage @ Vr: 5µA @ 83.6V Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 (DO-204AH) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SMDA15C-5 |
|
Microsemi Corporation |
Description: TVS DIODE 15VWM 30VC 8-SO Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Zener Bidirectional Channels: 5 Voltage - Reverse Standoff (Typ): 15V Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 30V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Power - Peak Pulse: 300W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 50pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1805 Stücke - Preis und Lieferfrist anzeigen
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1N5379B/TR12 |
|
Microsemi Corporation |
Description: DIODE ZENER 110V 5W T18 Supplier Device Package: T-18 Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Current - Reverse Leakage @ Vr: 500nA @ 79.2V Impedance (Max) (Zzt): 125 Ohms Power - Max: 5W Tolerance: ±5% Voltage - Zener (Nom) (Vz): 110V Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| 1N5385B/TR12 |
|
Microsemi Corporation |
Description: DIODE ZENER 170V 5W AXIAL Voltage - Zener (Nom) (Vz): 170V Part Status: Obsolete Packaging: Tape & Reel (TR) Supplier Device Package: Axial Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Current - Reverse Leakage @ Vr: 500nA @ 122V Impedance (Max) (Zzt): 380 Ohms Tolerance: ±5% Power - Max: 5W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||
 |
JAN1N748A-1 |
|
Microsemi Corporation |
Description: DIODE ZENER 3.9V 500MW DO35 Voltage - Zener (Nom) (Vz): 3.9 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk Current - Reverse Leakage @ Vr: 2 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 (DO-204AH) Impedance (Max) (Zzt): 23 Ohms |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| JANTXV2N6193U3 |
Hersteller: Microsemi Corporation
Description: TRANS PNP 100V 5A TO-39
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 100V 5A TO-39
Part Status: Active
Packaging: Bulk
| JANTX2N6211 |
Hersteller: Microsemi Corporation
Description: TRANS PNP 225V 2A TO-66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 225 V
Power - Max: 3 W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 225V 2A TO-66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 225 V
Power - Max: 3 W
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
| JANTX2N3439U4 |
Hersteller: Microsemi Corporation
Description: TRANS NPN 350V 1A UA
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 350V 1A UA
Packaging: Bulk
Part Status: Active
| JAN2N6211 |
Hersteller: Microsemi Corporation
Description: TRANS PNP 225V 2A TO-66
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 225V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
Power - Max: 3W
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 225V 2A TO-66
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 225V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 125mA, 1A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
Power - Max: 3W
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Supplier Device Package: TO-66 (TO-213AA)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
auf Bestellung 2280 Stücke - Preis und Lieferfrist anzeigen
| JANTXV2N3467 |
Hersteller: Microsemi Corporation
Description: TRANS PNP 40V 1A TO-3
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 1A
Transistor Type: PNP
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 40V 1A TO-3
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 1A
Transistor Type: PNP
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39 (TO-205AD)
| JANTXV2N4399 |
Hersteller: Microsemi Corporation
Description: TRANS PNP 60V 30A TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-3 (TO-204AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Current - Collector Cutoff (Max): 100µA
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30A
Transistor Type: PNP
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature: -55°C ~ 200°C (TJ)
Power - Max: 5W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 60V 30A TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-3 (TO-204AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Current - Collector Cutoff (Max): 100µA
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30A
Transistor Type: PNP
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature: -55°C ~ 200°C (TJ)
Power - Max: 5W
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| JAN2N6250T1 |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
| JANTX2N3251AUB |
|
Hersteller: Microsemi Corporation
Description: TRANS PNP 60V 0.2A TO-39
Current - Collector (Ic) (Max): 200mA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: UB
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 60V 0.2A TO-39
Current - Collector (Ic) (Max): 200mA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: UB
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
| JAN2N5671 |
Hersteller: Microsemi Corporation
Description: TRANS NPN 90V 30A TO-3
Supplier Device Package: TO-3 (TO-204AA)
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V
Current - Collector Cutoff (Max): 10mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Voltage - Collector Emitter Breakdown (Max): 90V
Current - Collector (Ic) (Max): 30A
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 90V 30A TO-3
Supplier Device Package: TO-3 (TO-204AA)
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V
Current - Collector Cutoff (Max): 10mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Voltage - Collector Emitter Breakdown (Max): 90V
Current - Collector (Ic) (Max): 30A
Part Status: Active
Packaging: Bulk
auf Bestellung 80 Stücke - Preis und Lieferfrist anzeigen
| JANTX2N5672 |
Hersteller: Microsemi Corporation
Description: TRANS NPN 120V 30A TO-3
Supplier Device Package: TO-3 (TO-204AA)
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V
Current - Collector Cutoff (Max): 10mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 30A
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 120V 30A TO-3
Supplier Device Package: TO-3 (TO-204AA)
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15A, 2V
Current - Collector Cutoff (Max): 10mA
Vce Saturation (Max) @ Ib, Ic: 5V @ 6A, 30A
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 30A
Part Status: Active
Packaging: Bulk
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| JANTXV2N3251AUB |
|
Hersteller: Microsemi Corporation
Description: TRANS PNP 60V 0.2A TO-39
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: UB
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 200mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 60V 0.2A TO-39
Transistor Type: PNP
Part Status: Obsolete
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: UB
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 200mA
| JANTX2N6250T1 |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
| JANTX2N2432 |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 30V 0.1A
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Power - Max: 300mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 30V 0.1A
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 0.15mV @ 500µA, 10V
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Power - Max: 300mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
auf Bestellung 8400 Stücke - Preis und Lieferfrist anzeigen
| JANTXV2N6250T1 |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
| JANS2N3439UA |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 350V 1A UA
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Power - Max: 800 mW
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 350V 1A UA
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Power - Max: 800 mW
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
| JAN2N6249T1 |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 200V 10A TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 200V 10A TO-3
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
| JANTX2N6249T1 |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 200V 10A TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 200V 10A TO-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
| JANS2N6193 |
Hersteller: Microsemi Corporation
Description: TRANS PNP 100V 5A TO-39
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 5A
Transistor Type: PNP
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 100V 5A TO-39
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 5A
Transistor Type: PNP
Part Status: Active
Packaging: Bulk
Supplier Device Package: TO-39 (TO-205AD)
Package / Case: TO-205AD, TO-39-3 Metal Can
| JANTXV2N6249T1 |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 200V 10A TO-3
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 200V 10A TO-3
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
| JANS2N3439U4 |
Hersteller: Microsemi Corporation
Description: TRANS NPN 350V 1A UA
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 350V 1A UA
Part Status: Active
Packaging: Bulk
| JANS2N5666U3 |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 200V 5A TO-66
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Current - Collector Cutoff (Max): 200nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 5A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Supplier Device Package: U3
Package / Case: 3-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 200V 5A TO-66
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Current - Collector Cutoff (Max): 200nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 5A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Supplier Device Package: U3
Package / Case: 3-SMD, Flat Lead
| JANS2N6249T1 |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 200V 10A TO-3
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 200V 10A TO-3
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-254AA
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max): 200V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
| JANS2N6250T1 |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS NPN 275V 10A TO-3
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 6W
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275V
Current - Collector (Ic) (Max): 10A
Transistor Type: NPN
Part Status: Active
Packaging: Bulk
| JANTXV1N6316CUS |
|
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: VOLTAGE REGULATOR
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
| JANS1N6316C |
|
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: B, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: B, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
| 2N3507AU4 |
|
Hersteller: Microsemi Corporation
Description: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Power - Max: 1W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: NPN TRANSISTOR
Packaging: Bulk
Part Status: Active
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Power - Max: 1W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U4
| LX7157BCLD |
|
Hersteller: Microsemi Corporation
Description: IC REG BUCK ADJUSTABLE 3A 12DFN
Supplier Device Package: 12-DFN-EP (3x3.5)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -10°C ~ 85°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 2.2MHz
Current - Output: 3A
Voltage - Output (Max): 1.8V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 5.5V
Voltage - Input (Min): 3V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG BUCK ADJUSTABLE 3A 12DFN
Supplier Device Package: 12-DFN-EP (3x3.5)
Package / Case: 12-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -10°C ~ 85°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 2.2MHz
Current - Output: 3A
Voltage - Output (Max): 1.8V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 5.5V
Voltage - Input (Min): 3V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Bulk
| 1N5940B |
|
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
| LX7104ISF |
|
Hersteller: Microsemi Corporation
Description: IC REG BUCK ADJ 1.5A SOT23-6
Packaging: Bulk
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 18V
Voltage - Output (Min/Fixed): 0.81V
Voltage - Output (Max): 15V
Current - Output: 1.5A
Frequency - Switching: 1.4MHz
Synchronous Rectifier: No
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG BUCK ADJ 1.5A SOT23-6
Packaging: Bulk
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 18V
Voltage - Output (Min/Fixed): 0.81V
Voltage - Output (Max): 15V
Current - Output: 1.5A
Frequency - Switching: 1.4MHz
Synchronous Rectifier: No
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
| 1N5258A (DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 36V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 36V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
| JAN1N3595A-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 150MA DO35
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 125V 150MA DO35
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTX1N3595A-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 150MA DO35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: DO-35
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 125V 150MA DO35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: DO-35
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
| JANTXV1N3595A-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 150MA DO35
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Through Hole
Packaging: Bulk
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 125V 150MA DO35
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Through Hole
Packaging: Bulk
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
| JAN1N3595UR-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GP 125V 150MA DO213AA
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1nA @ 125V
Reverse Recovery Time (trr): 3µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 125V 150MA DO213AA
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1nA @ 125V
Reverse Recovery Time (trr): 3µs
| JAN1N6638 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: D, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: D, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| JAN1N6639 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 75V 300MA AXIAL
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5D
Package / Case: D, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100nA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 300MA AXIAL
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5D
Package / Case: D, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100nA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
| JANTX1N6639 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 75V 300MA AXIAL
Current - Reverse Leakage @ Vr: 100µA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA
Current - Average Rectified (Io): 300mA (DC)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5D
Package / Case: D, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 300MA AXIAL
Current - Reverse Leakage @ Vr: 100µA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA
Current - Average Rectified (Io): 300mA (DC)
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5D
Package / Case: D, Axial
Mounting Type: Through Hole
| JAN1N3595AUS |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 150MA
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 125V 150MA
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
| 1N5248BDO35 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 18V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 18V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 21 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
| JAN1N6638US |
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Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 300MA D-MELF
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 150V 300MA D-MELF
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 150V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| JANTXV1N6638 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-Pak
Package / Case: D, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 125V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 125V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-Pak
Package / Case: D, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 125V
Reverse Recovery Time (trr): 20ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Packaging: Bulk
auf Bestellung 150 Stücke - Preis und Lieferfrist anzeigen
| JANTXV1N6639 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 75V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Reverse Leakage @ Vr: 100nA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-Pak
Package / Case: D, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 75V 300MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Reverse Leakage @ Vr: 100nA @ 75V
Reverse Recovery Time (trr): 4ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
Current - Average Rectified (Io): 300mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-Pak
Package / Case: D, Axial
Mounting Type: Through Hole
| JAN1N3595AUR-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GP 125V 150MA DO213AA
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Bulk
Part Status: Active
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 125V 150MA DO213AA
Current - Reverse Leakage @ Vr: 2nA @ 125V
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Bulk
Part Status: Active
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
| JANTX1N3595AUR-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GP 125V 150MA DO213AA
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2nA @ 125V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 125V 150MA DO213AA
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Package / Case: DO-213AA
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 2nA @ 125V
| JAN1N6630 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 900V 1.4A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: E, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 900V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 900V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 900V 1.4A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: E, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 900V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 900V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| JAN1N6621US |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 440V 2A D5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 75V
Reverse Recovery Time (trr): 20ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 440V 2A D5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 75V
Reverse Recovery Time (trr): 20ns
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 75V
Diode Type: Standard
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Part Status: Active
Packaging: Bulk
| JAN1N6623US |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 880V 1A D5A
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 880V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 880V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 880V 1A D5A
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 880V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 880V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JAN1N6624US |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 990V 1A D5A
Current - Reverse Leakage @ Vr: 500nA @ 990V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 990V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 990V 1A D5A
Current - Reverse Leakage @ Vr: 500nA @ 990V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 990V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
| JAN1N6625US |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.1KV 1A D5A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.1KV 1A D5A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| JANTXV1N3595AUR-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 2nA @ 125V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 2nA @ 125V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTXV1N3595AUS |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 125V 150MA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Part Status: Active
Current - Reverse Leakage @ Vr: 2nA @ 125V
Packaging: Bulk
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 125V 150MA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Voltage - DC Reverse (Vr) (Max): 125V
Diode Type: Standard
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Part Status: Active
Current - Reverse Leakage @ Vr: 2nA @ 125V
Packaging: Bulk
Reverse Recovery Time (trr): 3µs
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Current - Average Rectified (Io): 150mA
| JANTX1N6661 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 225V 500MA DO35
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 225V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50nA @ 225V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 225V 500MA DO35
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 225V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50nA @ 225V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
auf Bestellung 46 Stücke - Preis und Lieferfrist anzeigen
| 1N4458 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| JANTX1N6621U |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 1.2A A-MELF
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500nA @ 400V
Reverse Recovery Time (trr): 30ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 1.2A A-MELF
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500nA @ 400V
Reverse Recovery Time (trr): 30ns
| JANTX1N6622U |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1.2A A-MELF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500nA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 1.2A A-MELF
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 500nA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| 1N4458R |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 15A DO203AA
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
| 1N4459R |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
| JANTXV1N3595UR-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 2nA @ 125V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 125V 150MA DO213AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 2nA @ 125V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTX1N4153UR-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 50V 150MA DO213AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100µA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA DO213AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100µA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
| JANTXV1N6630 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 900V 1.4A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 900V
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: E-PAK
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 900V 1.4A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 900V
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: E-PAK
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JAN1N6630US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 900V 1.4A E-MELF
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 900V
Part Status: Active
Diode Type: Standard
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 900V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 900V 1.4A E-MELF
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 900V
Part Status: Active
Diode Type: Standard
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 900V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JAN1N6631US |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.1KV 1.4A D5B
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.1KV 1.4A D5B
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTX1N3645 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 2KV 250MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 2000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 2000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 2KV 250MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 2000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 2000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| JANTXV1N6630US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1.4A E-MELF
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 1000V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 1.4A E-MELF
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 1000V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTXV1N6631US |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.1KV 1.4A D5B
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1.1KV 1.4A D5B
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTXV1N4153-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 50V 150MA DO35
Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA DO35
Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
Current - Average Rectified (Io): 150mA
Voltage - DC Reverse (Vr) (Max): 50V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
| JAN1N1190 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 35A DO203AB
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
| JAN1N1204A |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
auf Bestellung 1300 Stücke - Preis und Lieferfrist anzeigen
| JAN1N1204AR |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JAN1N4458 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 15A DO203AA
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| JAN1N4459 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 15A DO203AA
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 15A DO203AA
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
| JANTXV1N1204A |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JAN1N4458R |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 15A DO203AA
Current - Average Rectified (Io): 15A
Voltage - DC Reverse (Vr) (Max): 800V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-203AA (DO-4)
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Packaging: Bulk
Current - Reverse Leakage @ Vr: 50µA @ 800V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
| JAN1N4459R |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 15A DO203AA
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 15A DO203AA
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Current - Average Rectified (Io): 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTXV1N1204AR |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTX1N4458 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTX1N4459 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTX1N4458R |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 800V 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 800V 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 800V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTX1N4459R |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 1KV 15A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JAN1N1190R |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 35A DO203AB
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Package / Case: DO-203AB, DO-5, Stud
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard, Reverse Polarity
Part Status: Active
Packaging: Bulk
| JANTX1N649UR-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 400MA DO213
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50nA @ 600V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 400MA DO213
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 50nA @ 600V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JAN1N6661US |
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 225V 500MA D5A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 225V 500MA D5A
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| JANTXV1N1190 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10µA @ 600V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 35A DO203AB
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10µA @ 600V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
| JANTXV1N1190R |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 35A DO203AB
Packaging: Bulk
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
| JANTXV1N4153UR-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 50V 150MA DO213AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 50V 150MA DO213AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
| JANTX1N6661US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 225V 500MA D5A
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 225V 500MA D5A
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
| JANS1N6661US |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 225V 500MA D5D
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 225V 500MA D5D
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 50nA @ 225V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 225V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| JANTX1N3893 |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 38A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 400V 12A DO203AA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 38A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
| JANTX1N3910A |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 100V 50A DO203AB
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-203AB (DO-5)
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 15µA @ 100V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 100V 50A DO203AB
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-203AB (DO-5)
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Current - Reverse Leakage @ Vr: 15µA @ 100V
Reverse Recovery Time (trr): 200ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 50A
Current - Average Rectified (Io): 50A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
| APT40SM120S |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 41A D3PAK
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
Part Status: Obsolete
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs (Max): +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Power Dissipation (Max): 273W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1200V 41A D3PAK
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
Part Status: Obsolete
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs (Max): +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Power Dissipation (Max): 273W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
| APT40SM120J |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 32A SOT227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Power Dissipation (Max): 165W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Vgs (Max): +25V, -10V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: SOT-227
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 30 Stücke Description: MOSFET N-CH 1200V 32A SOT227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Power Dissipation (Max): 165W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Vgs (Max): +25V, -10V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: SOT-227
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
| APT40SM120B |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 41A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Vgs (Max): +25V, -10V
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 273W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1200V 41A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Vgs (Max): +25V, -10V
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 273W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
Part Status: Obsolete
Packaging: Bulk
| 1N5225A(DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3V 500MW DO35
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 50µA @ 1V
Impedance (Max) (Zzt): 29 Ohms
Power - Max: 500mW
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 3V
Part Status: Discontinued at Digi-Key
Packaging: Bag
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3V 500MW DO35
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Current - Reverse Leakage @ Vr: 50µA @ 1V
Impedance (Max) (Zzt): 29 Ohms
Power - Max: 500mW
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 3V
Part Status: Discontinued at Digi-Key
Packaging: Bag
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
auf Bestellung 14406 Stücke - Preis und Lieferfrist anzeigen
| 1N753A-1TR |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 3 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 6.2V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 3 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 6.2V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
| 1N4764AP/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 1W DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 76V
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 350 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 100V 1W DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 76V
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 350 Ohms
| 1N986B-1E3 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 500MW DO35
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 750 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 83.6V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 110V 500MW DO35
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 750 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 83.6V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35 (DO-204AH)
| SMDA15C-5 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 15VWM 30VC 8-SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Type: Zener
Bidirectional Channels: 5
Voltage - Reverse Standoff (Typ): 15V
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Power - Peak Pulse: 300W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 15VWM 30VC 8-SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Type: Zener
Bidirectional Channels: 5
Voltage - Reverse Standoff (Typ): 15V
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 30V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Power - Peak Pulse: 300W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 50pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 1805 Stücke - Preis und Lieferfrist anzeigen
| 1N5379B/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 5W T18
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Reverse Leakage @ Vr: 500nA @ 79.2V
Impedance (Max) (Zzt): 125 Ohms
Power - Max: 5W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 110V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 110V 5W T18
Supplier Device Package: T-18
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Reverse Leakage @ Vr: 500nA @ 79.2V
Impedance (Max) (Zzt): 125 Ohms
Power - Max: 5W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 110V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| 1N5385B/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 170V 5W AXIAL
Voltage - Zener (Nom) (Vz): 170V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: Axial
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Reverse Leakage @ Vr: 500nA @ 122V
Impedance (Max) (Zzt): 380 Ohms
Tolerance: ±5%
Power - Max: 5W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 170V 5W AXIAL
Voltage - Zener (Nom) (Vz): 170V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: Axial
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Reverse Leakage @ Vr: 500nA @ 122V
Impedance (Max) (Zzt): 380 Ohms
Tolerance: ±5%
Power - Max: 5W
| JAN1N748A-1 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 23 Ohms
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 3.9V 500MW DO35
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35 (DO-204AH)
Impedance (Max) (Zzt): 23 Ohms
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