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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SA1400 Produktcode: 152651 |
NEC |
Transistoren > Bipolar-Transistoren PNP fT: TO-251 U, V: 400 V I, А: 400 V Bem.: 200 |
auf Bestellung 6 Stück: Lieferzeit 21-28 Tag (e) |
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2SA1428 Produktcode: 152652 |
Toshiba |
Transistoren > Bipolar-Transistoren PNP Gehäuse: SOT-33 fT: 100 MHz U, V: 50 V U, V: 50 V I, А: 2 А |
auf Bestellung 6 Stück: Lieferzeit 21-28 Tag (e) |
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2SA1492 Produktcode: 200234 |
JSMicro |
Transistoren > Bipolar-Transistoren PNP Gehäuse: TO-3P fT: 20 MHz U, V: 180 V U, V: 180 V I, А: 15 A h21,max: 50 |
auf Bestellung 29 Stück: Lieferzeit 21-28 Tag (e) |
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2SA1494 Produktcode: 35748 |
Toshiba |
Transistoren > Bipolar-Transistoren PNP Gehäuse: MT-200 fT: 20 MHz U, V: 200 U, V: 200 I, А: 17 h21,max: 50 |
auf Bestellung 2 Stück: Lieferzeit 21-28 Tag (e) |
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2SA1404E | Sanyo |
Description: PNP EPITAXIAL PLANAR SILICON Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 500MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.2 W |
auf Bestellung 2794 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1405E | ONSEMI |
Description: ONSEMI - 2SA1405E - 2SA1405E, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1405E | onsemi |
Description: PNP SILICON TRANSISTOR Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 7mA, 70mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 500MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1.2 W |
auf Bestellung 14079 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1406D | ONSEMI |
Description: ONSEMI - 2SA1406D - 2SA1406D, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1416S-TD-E | ON Semiconductor | Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 3924 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1416S-TD-E | ON Semiconductor | Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 3924 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1416S-TD-E | ON Semiconductor | Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1416S-TD-E | onsemi |
Description: TRANS PNP 100V 1A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1416S-TD-E | onsemi |
Description: TRANS PNP 100V 1A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 2735 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1416T-TD-E | onsemi |
Description: TRANS PNP 100V 1A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 2749 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1416T-TD-E | onsemi |
Description: TRANS PNP 100V 1A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 1950 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1417S-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
auf Bestellung 983 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1417S-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 983 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA1417S-TD-E | onsemi |
Description: TRANS PNP 100V 2A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 990 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1417T-TD-E | onsemi |
Description: TRANS PNP 100V 2A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 860 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1418S-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.7A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
auf Bestellung 566 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1418S-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.7A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 566 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA1418S-TD-E | ONSEMI |
Description: ONSEMI - 2SA1418S-TD-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1418S-TD-E | ONSEMI |
Description: ONSEMI - 2SA1418S-TD-E - Bipolarer Einzeltransistor (BJT), PNP, 160 V, 700 mA, 500 mW, SOT-89, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 140hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 700mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-89 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 160V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 120MHz Betriebstemperatur, max.: 150°C |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1418S-TD-E | ONSEMI |
Description: ONSEMI - 2SA1418S-TD-E - Bipolarer Einzeltransistor (BJT), PNP, 160 V, 700 mA, 500 mW, SOT-89, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX DC-Stromverstärkung (hFE), min.: 140hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 700mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-89 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 160V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 120MHz Betriebstemperatur, max.: 150°C |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1418S-TD-E | ON Semiconductor | Trans GP BJT PNP 160V 0.7A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 2601 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1418S-TD-E | ON Semiconductor | Trans GP BJT PNP 160V 0.7A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1418S-TD-E | ON Semiconductor | Trans GP BJT PNP 160V 0.7A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 2601 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1418S-TD-E | Sanyo |
Description: PNP EPITAXIAL PLANAR SILICON TRA Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1418S-TD-E | onsemi |
Description: TRANS PNP 160V 0.7A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 500 mW |
auf Bestellung 967 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1418T-TD-E | ON Semiconductor | Trans GP BJT PNP 160V 0.7A 500mW 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 281 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1418T-TD-E | ON Semiconductor | Trans GP BJT PNP 160V 0.7A 500mW 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 281 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1418T-TD-E | ONSEMI |
Description: ONSEMI - 2SA1418T-TD-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 336239 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1418T-TD-E | onsemi |
Description: TRANS PNP 160V 0.7A PCP Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Supplier Device Package: PCP |
auf Bestellung 356239 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1419S-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1.5A Power dissipation: 0.5W Case: SOT89 Current gain: 100...400 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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2SA1419T-TD-E | ONSEMI |
Description: ONSEMI - 2SA1419T-TD-E - TRANS, BIPOLAR, PNP, 160V, 1.5A, SOT-89 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1434-TB-E | ONSEMI |
Description: ONSEMI - 2SA1434-TB-E - 2SA1434-TB-E, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1434-TB-E | onsemi |
Description: BIP PNP 0.1A 50V Packaging: Bulk |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1435-AA | ONSEMI |
Description: ONSEMI - 2SA1435-AA - 2SA1435-AA, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 13500 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1435-AA | onsemi |
Description: 2SA1435 - SMALL SIGNAL BIPOLAR T Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 600 mW |
auf Bestellung 13500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1441(016)-S6-AZ | Renesas Electronics Corporation |
Description: POWER BIPOLAR TRANSISTOR, PNP Packaging: Bulk Part Status: Active |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1441(2)-S6-AZ | Renesas Electronics Corporation |
Description: POWER BIPOLAR TRANSISTOR, PNP Packaging: Bulk Part Status: Active |
auf Bestellung 6084 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1441(5)-S6-AZ | Renesas Electronics Corporation |
Description: POWER BIPOLAR TRANSISTOR, PNP Packaging: Bulk Part Status: Active |
auf Bestellung 6805 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1443(1)-S6-AZ | Renesas Electronics Corporation |
Description: 10A, 100V, PNP Packaging: Bulk |
auf Bestellung 1968 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1450T-AA | ONSEMI |
Description: ONSEMI - 2SA1450T-AA - 2SA1450T-AA, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 31073 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1450T-AA | onsemi |
Description: PNP SILICON TRANSISTOR Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 600 mW |
auf Bestellung 31073 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1461-T2B-A | Renesas Electronics Corporation |
Description: HIGH FREQUENCY PNP TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 1V Frequency - Transition: 510MHz Supplier Device Package: SC-59 |
auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1462-T1B-A | Renesas Electronics Corporation |
Description: HIGH SPEED PNP TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Frequency - Transition: 1.8GHz Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW |
auf Bestellung 1525389 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1463-T1-AZ | Renesas Electronics Corporation |
Description: HIGH SPEED PNP TRANSISTOR Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 10V Frequency - Transition: 400MHz Supplier Device Package: SC-62 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 2 W |
auf Bestellung 94962 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1469R | ONSEMI |
Description: ONSEMI - 2SA1469R - 2SA1469R, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 920 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1469R | onsemi |
Description: PNP SILICON TRANSISTOR Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
auf Bestellung 11914 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1469R-MBS-LA9 | ONSEMI |
Description: ONSEMI - 2SA1469R-MBS-LA9 - EACH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1431 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1469R-MBS-LA9 | onsemi |
Description: PNP EPITAXIAL PLANAR SILICON Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1469R-MBS-LA9-SY | Sanyo |
Description: PNP EPITAXIAL PLANAR SILICON Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
auf Bestellung 1431 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1478E | ONSEMI |
Description: ONSEMI - 2SA1478E - 2SA1478E, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 15400 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1478E | onsemi |
Description: PNP SILICON TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 150MHz Supplier Device Package: TO-126ML Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 1.3 W |
auf Bestellung 15400 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1480E | ON Semiconductor | Trans GP BJT PNP 300V 0.1A 1500mW 3-Pin TO-126ML |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1481E-AC | ONSEMI |
Description: ONSEMI - 2SA1481E-AC - 2SA1481E-AC, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1481E-AC | onsemi |
Description: BIP PNP 0.15A 50V Packaging: Bulk |
auf Bestellung 80000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1488 | Sanken Electric Company, Ltd. | Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220F Bulk |
auf Bestellung 685 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1492 | Sanken |
PNP 180V 15A 130W 20MHz 2SA1492 TO-3P T2SA1492 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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2SA1428 Produktcode: 152652 |
Hersteller: Toshiba
Transistoren > Bipolar-Transistoren PNP
Gehäuse: SOT-33
fT: 100 MHz
U, V: 50 V
U, V: 50 V
I, А: 2 А
Transistoren > Bipolar-Transistoren PNP
Gehäuse: SOT-33
fT: 100 MHz
U, V: 50 V
U, V: 50 V
I, А: 2 А
auf Bestellung 6 Stück:
Lieferzeit 21-28 Tag (e)2SA1492 Produktcode: 200234 |
Hersteller: JSMicro
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-3P
fT: 20 MHz
U, V: 180 V
U, V: 180 V
I, А: 15 A
h21,max: 50
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-3P
fT: 20 MHz
U, V: 180 V
U, V: 180 V
I, А: 15 A
h21,max: 50
auf Bestellung 29 Stück:
Lieferzeit 21-28 Tag (e)2SA1494 Produktcode: 35748 |
Hersteller: Toshiba
Transistoren > Bipolar-Transistoren PNP
Gehäuse: MT-200
fT: 20 MHz
U, V: 200
U, V: 200
I, А: 17
h21,max: 50
Transistoren > Bipolar-Transistoren PNP
Gehäuse: MT-200
fT: 20 MHz
U, V: 200
U, V: 200
I, А: 17
h21,max: 50
auf Bestellung 2 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.92 EUR |
2SA1404E |
Hersteller: Sanyo
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 500MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 500MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
auf Bestellung 2794 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
398+ | 1.8 EUR |
2SA1405E |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1405E - 2SA1405E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1405E - 2SA1405E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)2SA1405E |
Hersteller: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 7mA, 70mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 500MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 7mA, 70mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 500MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1.2 W
auf Bestellung 14079 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
355+ | 2.04 EUR |
2SA1406D |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1406D - 2SA1406D, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1406D - 2SA1406D, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)2SA1416S-TD-E |
Hersteller: ON Semiconductor
Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 3924 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
384+ | 0.41 EUR |
410+ | 0.37 EUR |
412+ | 0.36 EUR |
478+ | 0.3 EUR |
483+ | 0.28 EUR |
500+ | 0.26 EUR |
1000+ | 0.24 EUR |
2SA1416S-TD-E |
Hersteller: ON Semiconductor
Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 3924 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
412+ | 0.38 EUR |
478+ | 0.32 EUR |
483+ | 0.3 EUR |
500+ | 0.28 EUR |
1000+ | 0.27 EUR |
3000+ | 0.25 EUR |
2SA1416S-TD-E |
Hersteller: ON Semiconductor
Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)2SA1416S-TD-E |
Hersteller: onsemi
Description: TRANS PNP 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS PNP 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.5 EUR |
2SA1416S-TD-E |
Hersteller: onsemi
Description: TRANS PNP 100V 1A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS PNP 100V 1A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 2735 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.33 EUR |
24+ | 1.12 EUR |
100+ | 0.78 EUR |
500+ | 0.61 EUR |
2SA1416T-TD-E |
Hersteller: onsemi
Description: TRANS PNP 100V 1A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS PNP 100V 1A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 2749 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.35 EUR |
23+ | 1.14 EUR |
100+ | 0.79 EUR |
500+ | 0.62 EUR |
2SA1416T-TD-E |
Hersteller: onsemi
Description: TRANS PNP 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS PNP 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 1950 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.5 EUR |
2SA1417S-TD-E |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 983 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
118+ | 0.61 EUR |
127+ | 0.56 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
2SA1417S-TD-E |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 983 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
118+ | 0.61 EUR |
127+ | 0.56 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
1000+ | 0.39 EUR |
2SA1417S-TD-E |
Hersteller: onsemi
Description: TRANS PNP 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS PNP 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 990 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.38 EUR |
22+ | 1.2 EUR |
100+ | 0.83 EUR |
500+ | 0.7 EUR |
2SA1417T-TD-E |
Hersteller: onsemi
Description: TRANS PNP 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
Description: TRANS PNP 100V 2A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 860 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.38 EUR |
22+ | 1.2 EUR |
100+ | 0.83 EUR |
500+ | 0.7 EUR |
2SA1418S-TD-E |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.7A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.7A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
auf Bestellung 566 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
112+ | 0.64 EUR |
119+ | 0.6 EUR |
155+ | 0.46 EUR |
164+ | 0.44 EUR |
2SA1418S-TD-E |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.7A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.7A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.7A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 566 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
112+ | 0.64 EUR |
119+ | 0.6 EUR |
155+ | 0.46 EUR |
164+ | 0.44 EUR |
1000+ | 0.42 EUR |
2SA1418S-TD-E |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1418S-TD-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1418S-TD-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)2SA1418S-TD-E |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1418S-TD-E - Bipolarer Einzeltransistor (BJT), PNP, 160 V, 700 mA, 500 mW, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 140hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 700mA
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 500mW
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 160V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 120MHz
Betriebstemperatur, max.: 150°C
Description: ONSEMI - 2SA1418S-TD-E - Bipolarer Einzeltransistor (BJT), PNP, 160 V, 700 mA, 500 mW, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 140hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 700mA
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 500mW
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 160V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 120MHz
Betriebstemperatur, max.: 150°C
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)2SA1418S-TD-E |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1418S-TD-E - Bipolarer Einzeltransistor (BJT), PNP, 160 V, 700 mA, 500 mW, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 140hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 700mA
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 500mW
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 160V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 120MHz
Betriebstemperatur, max.: 150°C
Description: ONSEMI - 2SA1418S-TD-E - Bipolarer Einzeltransistor (BJT), PNP, 160 V, 700 mA, 500 mW, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
DC-Stromverstärkung (hFE), min.: 140hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 700mA
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 500mW
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 160V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 120MHz
Betriebstemperatur, max.: 150°C
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)2SA1418S-TD-E |
Hersteller: ON Semiconductor
Trans GP BJT PNP 160V 0.7A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT PNP 160V 0.7A 1300mW 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 2601 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
214+ | 0.74 EUR |
281+ | 0.54 EUR |
282+ | 0.52 EUR |
500+ | 0.4 EUR |
1000+ | 0.28 EUR |
2SA1418S-TD-E |
Hersteller: ON Semiconductor
Trans GP BJT PNP 160V 0.7A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT PNP 160V 0.7A 1300mW 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)2SA1418S-TD-E |
Hersteller: ON Semiconductor
Trans GP BJT PNP 160V 0.7A 1300mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT PNP 160V 0.7A 1300mW 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 2601 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
183+ | 0.87 EUR |
212+ | 0.72 EUR |
214+ | 0.69 EUR |
281+ | 0.5 EUR |
282+ | 0.48 EUR |
500+ | 0.36 EUR |
1000+ | 0.25 EUR |
2SA1418S-TD-E |
Hersteller: Sanyo
Description: PNP EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: PNP EPITAXIAL PLANAR SILICON TRA
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1303+ | 0.55 EUR |
2SA1418S-TD-E |
Hersteller: onsemi
Description: TRANS PNP 160V 0.7A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Description: TRANS PNP 160V 0.7A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 967 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.43 EUR |
21+ | 1.26 EUR |
100+ | 0.87 EUR |
500+ | 0.73 EUR |
2SA1418T-TD-E |
Hersteller: ON Semiconductor
Trans GP BJT PNP 160V 0.7A 500mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT PNP 160V 0.7A 500mW 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)2SA1418T-TD-E |
Hersteller: ON Semiconductor
Trans GP BJT PNP 160V 0.7A 500mW 4-Pin(3+Tab) SOT-89 T/R
Trans GP BJT PNP 160V 0.7A 500mW 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)2SA1418T-TD-E |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1418T-TD-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1418T-TD-E - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 336239 Stücke:
Lieferzeit 14-21 Tag (e)2SA1418T-TD-E |
Hersteller: onsemi
Description: TRANS PNP 160V 0.7A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Supplier Device Package: PCP
Description: TRANS PNP 160V 0.7A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Supplier Device Package: PCP
auf Bestellung 356239 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1237+ | 0.58 EUR |
2SA1419S-TD-E |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT89
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT89
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
2SA1419T-TD-E |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1419T-TD-E - TRANS, BIPOLAR, PNP, 160V, 1.5A, SOT-89
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1419T-TD-E - TRANS, BIPOLAR, PNP, 160V, 1.5A, SOT-89
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)2SA1434-TB-E |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1434-TB-E - 2SA1434-TB-E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1434-TB-E - 2SA1434-TB-E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)2SA1434-TB-E |
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1110+ | 0.65 EUR |
2SA1435-AA |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1435-AA - 2SA1435-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1435-AA - 2SA1435-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 13500 Stücke:
Lieferzeit 14-21 Tag (e)2SA1435-AA |
Hersteller: onsemi
Description: 2SA1435 - SMALL SIGNAL BIPOLAR T
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
Description: 2SA1435 - SMALL SIGNAL BIPOLAR T
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
auf Bestellung 13500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1567+ | 0.46 EUR |
2SA1441(016)-S6-AZ |
Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
138+ | 5.23 EUR |
2SA1441(2)-S6-AZ |
Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
auf Bestellung 6084 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
138+ | 5.23 EUR |
2SA1441(5)-S6-AZ |
Hersteller: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Description: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
auf Bestellung 6805 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
138+ | 5.23 EUR |
2SA1443(1)-S6-AZ |
auf Bestellung 1968 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
138+ | 5.23 EUR |
2SA1450T-AA |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1450T-AA - 2SA1450T-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1450T-AA - 2SA1450T-AA, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 31073 Stücke:
Lieferzeit 14-21 Tag (e)2SA1450T-AA |
Hersteller: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
auf Bestellung 31073 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3806+ | 0.19 EUR |
2SA1461-T2B-A |
Hersteller: Renesas Electronics Corporation
Description: HIGH FREQUENCY PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 1V
Frequency - Transition: 510MHz
Supplier Device Package: SC-59
Description: HIGH FREQUENCY PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 1V
Frequency - Transition: 510MHz
Supplier Device Package: SC-59
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2704+ | 0.26 EUR |
2SA1462-T1B-A |
Hersteller: Renesas Electronics Corporation
Description: HIGH SPEED PNP TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 1.8GHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Description: HIGH SPEED PNP TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 1.8GHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 1525389 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1249+ | 0.58 EUR |
2SA1463-T1-AZ |
Hersteller: Renesas Electronics Corporation
Description: HIGH SPEED PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: SC-62
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Description: HIGH SPEED PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: SC-62
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 94962 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1082+ | 0.67 EUR |
2SA1469R |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1469R - 2SA1469R, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1469R - 2SA1469R, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)2SA1469R |
Hersteller: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
auf Bestellung 11914 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
919+ | 0.79 EUR |
2SA1469R-MBS-LA9 |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1469R-MBS-LA9 - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1469R-MBS-LA9 - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1431 Stücke:
Lieferzeit 14-21 Tag (e)2SA1469R-MBS-LA9 |
Hersteller: onsemi
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
919+ | 0.79 EUR |
2SA1469R-MBS-LA9-SY |
Hersteller: Sanyo
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
auf Bestellung 1431 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
919+ | 0.79 EUR |
2SA1478E |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1478E - 2SA1478E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1478E - 2SA1478E, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 15400 Stücke:
Lieferzeit 14-21 Tag (e)2SA1478E |
Hersteller: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.3 W
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.3 W
auf Bestellung 15400 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1158+ | 0.62 EUR |
2SA1480E |
Hersteller: ON Semiconductor
Trans GP BJT PNP 300V 0.1A 1500mW 3-Pin TO-126ML
Trans GP BJT PNP 300V 0.1A 1500mW 3-Pin TO-126ML
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)2SA1481E-AC |
Hersteller: ONSEMI
Description: ONSEMI - 2SA1481E-AC - 2SA1481E-AC, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SA1481E-AC - 2SA1481E-AC, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 80000 Stücke:
Lieferzeit 14-21 Tag (e)2SA1481E-AC |
auf Bestellung 80000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5323+ | 0.14 EUR |
2SA1488 |
Hersteller: Sanken Electric Company, Ltd.
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220F Bulk
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220F Bulk
auf Bestellung 685 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
78+ | 2.03 EUR |
83+ | 1.84 EUR |
100+ | 1.49 EUR |
200+ | 1.36 EUR |
500+ | 1.3 EUR |
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