Suchergebnisse für "60t65" : 17
Art der Ansicht :
Mindestbestellmenge: 3
Mindestbestellmenge: 2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFGY160T65SPD-B4 | onsemi |
 IGBT Transistors IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
|
|
AFGY160T65SPD-B4 | onsemi |
Description: IGBT TRENCH FS 650V 240A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 132 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/98ns Switching Energy: 12.4mJ (on), 5.7mJ (off) Test Condition: 400V, 160A, 5Ohm, 15V Gate Charge: 245 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 480 A Power - Max: 882 W Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 810 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FGH60T65SHD-F155 | onsemi |
Description: IGBT TRENCH FS 650V 120A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34.6 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/87ns Switching Energy: 1.69mJ (on), 630µJ (off) Test Condition: 400V, 60A, 6Ohm, 15V Gate Charge: 102 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 349 W |
auf Bestellung 975 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| FGH60T65SHD-F155 | onsemi / Fairchild |
IGBT Transistors IGBT, 650 V, 60 A Field Stop Trench |
auf Bestellung 370 Stücke: Lieferzeit 115-119 Tag (e) |
|
|||||||||||||||
|
|
FGH60T65SQD-F155 | onsemi |
Description: IGBT TRENCH FS 650V 120A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34.6 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20.8ns/102ns Switching Energy: 227µJ (on), 100µJ (off) Test Condition: 400V, 15A, 4.7Ohm, 15V Gate Charge: 79 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 333 W |
auf Bestellung 382 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FGH60T65SQD-F155 | onsemi |
IGBT Transistors 650V 60A FS4 TRENCH |
auf Bestellung 961 Stücke: Lieferzeit 150-154 Tag (e) |
|
||||||||||||||
|
|
FGY160T65SPD-F085 | onsemi / Fairchild |
IGBT Transistors 650V Field Stop Gen3 Trench IGBT |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
FGY160T65SPD-F085 | onsemi |
Description: 650V FS GEN3 TRENCH IGBT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 132 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 53ns/98ns Switching Energy: 12.4mJ (on), 5.7mJ (off) Test Condition: 400V, 160A, 15V Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 480 A Power - Max: 882 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 313 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| AFGY160T65SPD-B4 | ON Semiconductor |
|
auf Bestellung 190 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
|
FGH60T65 Produktcode: 130492 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
|
|||||||||||||||||
|
FGH60T65SQD-F155 Produktcode: 166613 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
|
|||||||||||||||||
| AFGY160T65SPD-B4 | ON Semiconductor |
IGBT 650V, 160A Field Stop Trench IGBT |
Produkt ist nicht verfügbar |
||||||||||||||||
|
|
FGH60T65SHD-F155 | ON Semiconductor |
Trans IGBT Chip N-CH 650V 120A 349000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
| FGH60T65SQD-F155 | ON Semiconductor |
Trans IGBT Chip N-CH 650V 120A 333000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||||
|
|
FGY160T65SPD-F085 | ON Semiconductor |
Trans IGBT Chip N-CH 650V 240A 882000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
| PCFG60T65SQF | onsemi |
Description: IGBT FIELD STOP 650V WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Supplier Device Package: Wafer IGBT Type: Field Stop Gate Charge: 79 nC Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
0T65 | Heyco |
Other Tools UPPER JAW .750 HOLE |
Produkt ist nicht verfügbar |
| AFGY160T65SPD-B4 |
|
Hersteller: onsemi
IGBT Transistors IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning
IGBT Transistors IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 23.51 EUR |
| 10+ | 21.98 EUR |
| 30+ | 18.94 EUR |
| 60+ | 17.9 EUR |
| 120+ | 16.44 EUR |
| 510+ | 16.1 EUR |
| 1020+ | 14.89 EUR |
| AFGY160T65SPD-B4 |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 240A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/98ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 400V, 160A, 5Ohm, 15V
Gate Charge: 245 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 882 W
Grade: Automotive
Qualification: AEC-Q100
Description: IGBT TRENCH FS 650V 240A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/98ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 400V, 160A, 5Ohm, 15V
Gate Charge: 245 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 882 W
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 23.67 EUR |
| 30+ | 19.17 EUR |
| 120+ | 18.04 EUR |
| 510+ | 16.35 EUR |
| FGH60T65SHD-F155 |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/87ns
Switching Energy: 1.69mJ (on), 630µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 349 W
Description: IGBT TRENCH FS 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/87ns
Switching Energy: 1.69mJ (on), 630µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 349 W
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.29 EUR |
| 30+ | 6.57 EUR |
| 120+ | 5.63 EUR |
| 510+ | 5 EUR |
| FGH60T65SHD-F155 |
|
Hersteller: onsemi / Fairchild
IGBT Transistors IGBT, 650 V, 60 A Field Stop Trench
IGBT Transistors IGBT, 650 V, 60 A Field Stop Trench
auf Bestellung 370 Stücke:
Lieferzeit 115-119 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 8.24 EUR |
| 10+ | 7.62 EUR |
| 25+ | 6.53 EUR |
| 100+ | 5.58 EUR |
| 250+ | 5.49 EUR |
| 450+ | 4.96 EUR |
| 900+ | 4.4 EUR |
| FGH60T65SQD-F155 |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/102ns
Switching Energy: 227µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 4.7Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 333 W
Description: IGBT TRENCH FS 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/102ns
Switching Energy: 227µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 4.7Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 333 W
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 8.92 EUR |
| 30+ | 7.08 EUR |
| 120+ | 6.06 EUR |
| FGH60T65SQD-F155 |
|
Hersteller: onsemi
IGBT Transistors 650V 60A FS4 TRENCH
IGBT Transistors 650V 60A FS4 TRENCH
auf Bestellung 961 Stücke:
Lieferzeit 150-154 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 8.87 EUR |
| 10+ | 7.62 EUR |
| 25+ | 7.04 EUR |
| 100+ | 6 EUR |
| 250+ | 5.68 EUR |
| 450+ | 5.35 EUR |
| 900+ | 4.31 EUR |
| FGY160T65SPD-F085 |
|
Hersteller: onsemi / Fairchild
IGBT Transistors 650V Field Stop Gen3 Trench IGBT
IGBT Transistors 650V Field Stop Gen3 Trench IGBT
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 23.36 EUR |
| 10+ | 21.84 EUR |
| 25+ | 17.09 EUR |
| 50+ | 17.07 EUR |
| 100+ | 16.37 EUR |
| 250+ | 16.12 EUR |
| 450+ | 14.98 EUR |
| FGY160T65SPD-F085 |
|
Hersteller: onsemi
Description: 650V FS GEN3 TRENCH IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/98ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 400V, 160A, 15V
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 882 W
Grade: Automotive
Qualification: AEC-Q101
Description: 650V FS GEN3 TRENCH IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/98ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 400V, 160A, 15V
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 882 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 23.51 EUR |
| 30+ | 19.04 EUR |
| 120+ | 17.92 EUR |
| FGH60T65 Produktcode: 130492 |
Produkt ist nicht verfügbar
| FGH60T65SQD-F155 Produktcode: 166613 |
|
Produkt ist nicht verfügbar
| AFGY160T65SPD-B4 |
|
Hersteller: ON Semiconductor
IGBT 650V, 160A Field Stop Trench IGBT
IGBT 650V, 160A Field Stop Trench IGBT
Produkt ist nicht verfügbar
| FGH60T65SHD-F155 |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 650V 120A 349000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 120A 349000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| FGH60T65SQD-F155 |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 650V 120A 333000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 120A 333000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| FGY160T65SPD-F085 |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 650V 240A 882000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 240A 882000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| PCFG60T65SQF |
Hersteller: onsemi
Description: IGBT FIELD STOP 650V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 79 nC
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Description: IGBT FIELD STOP 650V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 79 nC
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Produkt ist nicht verfügbar