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AON7460ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 2.5A; 13W; DFN3x3A EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 2.5A
Power dissipation: 13W
Case: DFN3x3A EP
Gate-source voltage: ±20V
On-state resistance: 0.83Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7462Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 300V 900MA/2.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 900mA, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7466ALPHA&OMEGATransistor N-Channel MOSFET; 30V; 25V; 11,3mOhm; 30A; 25W; -55°C ~ 150°C; AON7466 TAON7466
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
50+0.67 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7466Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 30A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7466Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 15A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7466ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 10W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 10W
Case: DFN3x3 EP
Gate-source voltage: ±25V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
auf Bestellung 1005 Stücke:
Lieferzeit 14-21 Tag (e)
175+0.49 EUR
275+0.31 EUR
307+0.27 EUR
500+0.26 EUR
Mindestbestellmenge: 175 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7474AAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 75V 4A/7.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 4.1W (Ta), 15.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 37.5 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 37.5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7502ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23.5A; 12.5W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23.5A
Power dissipation: 12.5W
Case: DFN3x3 EP
Gate-source voltage: ±25V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7502Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 21A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1022 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7506ALPHA&OMEGATransistor N-Channel MOSFET; 30V; 20V; 15,8mOhm; 12A; 20,5W; -55°C ~ 150°C; AON7506 TAON7506
Anzahl je Verpackung: 100 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.35 EUR
Mindestbestellmenge: 55 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7506Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 12A/12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7506Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin DFN-A EP T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.3 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7506ALPHA&OMEGATransistor N-Channel MOSFET; 30V; 20V; 15,8mOhm; 12A; 20,5W; -55°C ~ 150°C; AON7506 TAON7506
Anzahl je Verpackung: 100 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.35 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7506
Produktcode: 163661
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Alpha & OmegaTransistoren > MOSFET N-CH
Gehäuse: DFN3x3
Drain-Source-Spannung Uds, V: 30 В
Drain-Strom Idd, A: 12 A
Durchlasswiderstand Rds(on), Ohm: 15,8 мОм
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 542/9
Montage: SMD
auf Bestellung: 24 St.
  • 24 St. - Lieferzeit 21-28 Tag (e)
1+0.63 EUR
10+0.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AON7506ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; 8W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.4A
Power dissipation: 8W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of channel: enhancement
auf Bestellung 3362 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.27 EUR
544+0.15 EUR
603+0.14 EUR
642+0.13 EUR
Mindestbestellmenge: 313 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7506Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7506Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin DFN-A EP T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.3 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7508ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 25W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Power dissipation: 25W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7508Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 26A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.6 EUR
10000+0.56 EUR
15000+0.54 EUR
25000+0.51 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7508Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 32A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7508Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 26A/32A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.48 EUR
14+1.56 EUR
100+1.04 EUR
500+0.8 EUR
1000+0.73 EUR
2000+0.67 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7510Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 45A/75A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7510Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 75A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7510ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 59A; 18.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 59A
Power dissipation: 18.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7514Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 20A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 951 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AON7516Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 20A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7516Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 30A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7518Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1086 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7520Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 48A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7520Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 50A 8-Pin DFN EP T/R
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AON7520
Produktcode: 147583
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7520Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 48A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7520MOSFET 30V 50A (200A pulse), N Channel DFN 3.3x3.3 EP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7520CALPHA&OMEGATransistor N-Channel MOSFET; 30V; 12V; 3,1mOhm; 50A; 83,3W; -55°C ~ 150°C; AON7520 TAON7520
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.65 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7522EAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 34A 8-Pin DFN-A EP
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)
311+0.56 EUR
377+0.45 EUR
Mindestbestellmenge: 311 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7522EAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 15 V
auf Bestellung 190000 Stücke:
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5000+0.4 EUR
10000+0.37 EUR
15000+0.36 EUR
25000+0.33 EUR
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AON7522EAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 34A 8-Pin DFN-A EP
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.37 EUR
10000+0.33 EUR
15000+0.3 EUR
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AON7522EAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 34A 8-Pin DFN-A EP
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AON7522EALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 12W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 12W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of channel: enhancement
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AON7522EAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 15 V
auf Bestellung 196042 Stücke:
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12+1.76 EUR
20+1.09 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.49 EUR
2000+0.45 EUR
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AON7522EAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 34A 8-Pin DFN-A EP
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
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AON7522EAlpha & Omega SemiconductorTrans MOSFET N-CH 30V 34A 8-Pin DFN-A EP
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.65 EUR
309+0.55 EUR
311+0.52 EUR
377+0.42 EUR
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AON7524AOSMOSFET N-CH 30V 25A/28A 8DFN Транзистори
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AON7524ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 12.8W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 12.8W
Case: DFN3x3 EP
Gate-source voltage: ±12V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
auf Bestellung 6484 Stücke:
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244+0.35 EUR
257+0.33 EUR
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AON7524Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 25A/28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 15 V
auf Bestellung 105000 Stücke:
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AON7524Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 25A/28A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 15 V
auf Bestellung 107202 Stücke:
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10+2.15 EUR
16+1.36 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
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AON7524Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 28A 8-Pin DFN-A EP T/R
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AON7524
Produktcode: 211992
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Transistoren > MOSFET N-CH
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AON7526Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH
Packaging: Bulk
Produkt ist nicht verfügbar
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AON7528Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 45A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 15 V
auf Bestellung 30000 Stücke:
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3000+0.76 EUR
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AON7528Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 50A 8-Pin DFN EP
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AON7528ALPHA&OMEGATransistor N-Channel MOSFET; 30V; 20V; 3,4mOhm; 50A; 83W; -55°C ~ 150°C; AON7528 TAON7528
Anzahl je Verpackung: 25 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
25+1.5 EUR
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AON7528Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 45A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 15 V
auf Bestellung 32489 Stücke:
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12+1.88 EUR
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AON7528ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 33W; DFN3.3x3.3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 33W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 21.3nC
Kind of channel: enhancement
auf Bestellung 3327 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.68 EUR
139+0.62 EUR
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AON7530Alpha & Omega Semiconductor Inc.Description: N
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 24W
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
Produkt ist nicht verfügbar
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AON7532EAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 30.5A/28A 8DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 28A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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AON7532EAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 30.5A/28A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON7534Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 30A 8-Pin DFN-A EP
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AON7534Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 20A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1037 pF @ 15 V
auf Bestellung 85000 Stücke:
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5000+0.43 EUR
10000+0.4 EUR
15000+0.38 EUR
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50000+0.35 EUR
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AON7534ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 9W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 9W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
auf Bestellung 3138 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.37 EUR
283+0.3 EUR
317+0.27 EUR
500+0.26 EUR
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AON7534Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 20A/30A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1037 pF @ 15 V
auf Bestellung 91997 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.88 EUR
18+1.18 EUR
100+0.76 EUR
500+0.6 EUR
1000+0.54 EUR
2000+0.49 EUR
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AON7536Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 24A/68A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 32.5W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON7538Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 23A/30A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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AON7538Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 23A/30A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON7538Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 30A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
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AON7544Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 30A 8-Pin DFN-A EP
Produkt ist nicht verfügbar
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AON7544Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 30V 30A 8DFN
Produkt ist nicht verfügbar
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AON7544ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 9W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 9W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of channel: enhancement
Dimensions: 3x3mm
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AON7546Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 3X3 DFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON7548Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 24A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1086 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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AON7548_101Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 14A/24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1086 pF @ 15 V
Produkt ist nicht verfügbar
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AON7556Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 12A/12A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12A, 10V
Power Dissipation (Max): 4.1W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Produkt ist nicht verfügbar
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AON7566ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 12W; DFN8; 3x3mm; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of channel: enhancement
Version: ESD
Dimensions: 3x3mm
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AON7566Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 30V 34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 15 V
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AON7568Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 25A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
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AON7596Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 3X3 DFN
Packaging: Tape & Reel (TR)
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AON7611ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.5/-11.5A
Power dissipation: 2.8/8.3W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 38/50mΩ
Mounting: SMD
Gate charge: 4.6/2nC
Kind of channel: enhancement
Semiconductor structure: common drain
Kind of transistor: complementary pair
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AON7611Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
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AON7611Alpha & Omega SemiconductorTrans MOSFET N/P-CH 30V 9A/18.5A 8-Pin DFN-A EP T/R
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AON7611Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 9A/18.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 18.5A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
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AON7700Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 16A/40A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 26W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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AON7702Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 13.5A/36A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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AON7702AOS2010+
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AON7702
Produktcode: 62704
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Verschiedene Bauteile > Verschiedene Bauteile 2
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AON7702A_101Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 13.5A/36A 8DFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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AON7702BAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 13.5A/20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 3.1W (Ta), 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V
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AON7752Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 16A 8-Pin DFN-A EP T/R
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Lieferzeit 14-21 Tag (e)
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AON7752ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 8.3W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 8.3W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of channel: enhancement
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AON7752Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 15A/16A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 605 pF @ 15 V
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AON7752_101Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 15A/16A 8DFN
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AON7754Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 24A/32A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 70W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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AON7758Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 36A/75A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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AON7758_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 36A/75A 8DFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V
Power Dissipation (Max): 4.2W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
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AON7760Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 25V 33A/75A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 5520 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 34.5W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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AON7764Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 30A/32A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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AON7784Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 31A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 15 V
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AON7788Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 20A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 15 V
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AON7804Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 9A 8-Pin DFN EP T/R
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AON7804
Produktcode: 168958
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Transistoren > MOSFET N-CH
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AON7804Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
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35000+0.29 EUR
50000+0.27 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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