Produkte > AUI
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| AUIRFU8403 | Infineon Technologies | Description: MOSFET N-CH 40V 100A IPAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFU8403 | International Rectifier | Description: MOSFET N-CH 40V 100A I-PAK Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: IPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 17422 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFU8403 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - AUIRFU8403 - AUIRFU8403 20V-40V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRFU8403-701TRL | Infineon Technologies | Description: MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFU8403-701TRL | International Rectifier | Description: AUTOMOTIVE HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: PG-TO251-3-901 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 11512 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFU8405 | Infineon Technologies | Description: MOSFET N-CH 40V 100A IPAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFU8405 | Infineon / IR | MOSFET Auto 40V N-Ch FET 1.65mOhm 100A | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFU8405 | International Rectifier | Description: MOSFET N-CH 40V 100A I-PAK Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 3.9V @ 100µA Power Dissipation (Max): 163W (Tc) Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ24NS | Infineon Technologies | Description: MOSFET N-CH 55V 17A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ24NS | INFINEON | Description: INFINEON - AUIRFZ24NS - Leistungs-MOSFET, n-Kanal, 55 V, 17 A, 0.07 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (08-Jul-2021) | auf Bestellung 2694 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRFZ24NSTRL | Infineon Technologies | Description: MOSFET N-CH 55V 17A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ24NSTRL | INFINEON | Description: INFINEON - AUIRFZ24NSTRL - Leistungs-MOSFET, n-Kanal, 55 V, 17 A, 0.07 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 45W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.07ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 170 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ24NSTRL | International Rectifier | Description: MOSFET N-CH 55V 17A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 112727 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ24NSTRL | INFINEON | Description: INFINEON - AUIRFZ24NSTRL - Leistungs-MOSFET, n-Kanal, 55 V, 17 A, 0.07 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 170 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRFZ24NSTRR | Infineon Technologies | Description: MOSFET N-CH 55V 17A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ34N | Infineon Technologies | Description: AUIRFZ34 - 55V-60V N-CHANNEL AUT Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ34N | International Rectifier | Description: AUTOMOTIVE HEXFET N CHANNEL Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12659 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ34N | Infineon Technologies | Description: MOSFET N-CH 55V 29A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ44N | Infineon Technologies | Trans MOSFET N-CH Si 55V 31A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRFZ44N | International Rectifier | Description: AUTOMOTIVE HEXFET N CHANNEL Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 951 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ44N | Infineon Technologies | Trans MOSFET N-CH Si 55V 31A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1186 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRFZ44N | Infineon Technologies | MOSFETs AUTO 55V 1 N-CH HEXFET 17.5mOhms | auf Bestellung 128 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ44N | Infineon Technologies | Trans MOSFET N-CH Si 55V 31A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 299 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRFZ44N | Infineon Technologies | Description: MOSFET N-CH 55V 49A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ44N | International Rectifier | Trans MOSFET N-CH Si 55V 31A Automotive 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRFZ44NS | Infineon | N-MOSFET; unipolar; 55V; 49A; 94W; D2PAK Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ44NS | International Rectifier | Description: MOSFET N-CH 55V 49A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 9362 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ44NS Produktcode: 152487
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Lieblingsprodukt
| Transistoren > MOSFET N-CH Gehäuse: D2PAK (TO-263) Drain-Source-Spannung Uds, V: 55 В Drain-Strom Idd, A: 49 А Durchlasswiderstand Rds(on), Ohm: 17,5 мОм Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1470/63 Montage: SMD | auf Bestellung: 5 St.
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| AUIRFZ44NS | Infineon Technologies | Description: MOSFET N-CH 55V 49A D2PAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ44NSTRL | Infineon Technologies | Trans MOSFET N-CH Si 55V 49A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRFZ44NSTRL | International Rectifier | Description: AUTOMOTIVE HEXFET N CHANNEL Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 12182 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ44V | International Rectifier | Description: MOSFET N-CH 60V 55A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Part Status: Obsolete Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Qualification: AEC-Q101 | auf Bestellung 10540 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ44VZS Produktcode: 60832
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| AUIRFZ44VZS | Infineon Technologies | Description: MOSFET N-CH 60V 57A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ44VZS | Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ44VZSTRL | Infineon Technologies | Description: MOSFET N-CH 60V 57A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ44Z | Infineon Technologies | MOSFETs AUTO 55V 1 N-CH HEXFET 13.9mOhms | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ44Z | Infineon Technologies | Description: MOSFET N-CH 55V 51A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ44Z | International Rectifier | Description: MOSFET N-CH 55V 51A TO220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 613 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ44ZS | Infineon Technologies | Description: MOSFET N-CH 55V 51A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ44ZS | Infineon | auf Bestellung 2650 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| AUIRFZ44ZSTRL | Infineon Technologies | Description: MOSFET N-CH 55V 51A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ46NL | Infineon Technologies | MOSFET 55V, 53A, 16.5mOhm Automotive MOSFET | auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ46NL | Infineon Technologies | Description: MOSFET N-CH 55V 39A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48N | INFINEON | Description: INFINEON - AUIRFZ48N - Leistungs-MOSFET, AEC-Q101, n-Kanal, 55 V, 69 A, 0.011 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 69A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 160W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 160W Bauform - Transistor: TO-220AB Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.011ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (08-Jul-2021) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48N | International Rectifier | Description: MOSFET N-CH 55V 69A TO220AB | auf Bestellung 25056 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ48N | Infineon Technologies | MOSFETs Automotive MOSFET 55 54 nC Qg, TO-220 | auf Bestellung 979 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ48N | Infineon Technologies | Description: MOSFET N-CH 55V 69A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48N | Infineon Technologies | Trans MOSFET N-CH 55V 69A Automotive 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48NXKMA1 | Infineon Technologies | Description: MOSFET Part Status: Obsolete Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48Z | International Rectifier | MOSFET N-CH 55V 61A 91Вт TO-220AB Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48Z | Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | auf Bestellung 873 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48Z | International Rectifier | Description: MOSFET N-CH 55V 61A TO220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5982 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ48Z | Infineon Technologies | Description: AUIRFZ48Z - 55V-60V N-CHANNEL AU Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2847 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRFZ48Z | Infineon Technologies | Description: MOSFET N-CH 55V 61A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48ZS | Infineon Technologies | Description: MOSFET N-CH 55V 61A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48ZS | Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48ZSTRL | International Rectifier | Description: MOSFET N-CH 55V 61A D2PAK | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48ZSTRL | Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRFZ48ZSTRR | Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG35B60PD-E | Infineon Technologies | Description: AUTOMOTIVE ULTRAFAST SPEED IGBT Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4BC30S-S | Infineon Technologies | Description: IGBT Packaging: Bulk | auf Bestellung 25255 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRG4BC30S-S | Infineon Technologies | Description: IGBT 600V 34A 100W D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4BC30S-S | Infineon / IR | IGBT Transistors 600V AUTO DC-1 KHZ DISCRETE IGBT | auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4BC30S-S | International Rectifier | Description: IGBT 600V 34A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W | auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRG4BC30SSTRL | Infineon Technologies | Description: IGBT 600V 34A 100W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Part Status: Active Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4BC30SSTRL | Infineon Technologies | Trans IGBT Chip N-CH 600V 34A 100W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRG4BC30SSTRL | Infineon Technologies | IGBTs 600V AUTO DC-1 KHZ DISCRETE IGBT | auf Bestellung 484 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRG4BC30SSTRL | Infineon Technologies | Trans IGBT Chip N-CH 600V 34A 100W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4BC30SSTRL | Infineon Technologies | Trans IGBT Chip N-CH 600V 34A 100W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4BC30SSTRR | Infineon / IR | IGBT Transistors 600V AUTO DC-1 KHZ DISCRETE IGBT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4BC30U-S | Infineon Technologies | Description: IGBT 600V 23A 100W D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 17ns/78ns Switching Energy: 360µJ Test Condition: 480V, 12A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 92 A Power - Max: 100 W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4BC30U-S | Infineon / IR | IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4BC30U-S | International Rectifier | Description: IGBT 600V 23A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 17ns/78ns Switching Energy: 160µJ (on), 200µJ (off) Test Condition: 480V, 12A, 23Ohm, 15V Gate Charge: 75 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 92 A Power - Max: 100 W | auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRG4BC30U-SL | Infineon / IR | IGBT Transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4BC30USTRL | Infineon Technologies | Description: IGBT 600V 23A 100W D2PAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4BC30USTRL | Infineon / IR | IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT | auf Bestellung 356 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRG4BC30USTRL | International Rectifier | Description: IGBT 600V 23A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 17ns/78ns Switching Energy: 160µJ (on), 200µJ (off) Test Condition: 480V, 12A, 23Ohm, 15V Gate Charge: 50 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 92 A Power - Max: 100 W | auf Bestellung 6390 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRG4BC30USTRR | Infineon / IR | IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4PC40S-E | Infineon Technologies | Description: IGBT 600V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 22ns/650ns Switching Energy: 450µJ (on), 6.5mJ (off) Test Condition: 480V, 31A, 10Ohm, 15V Gate Charge: 150 nC Grade: Automotive Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 160 W Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4PC40S-E | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 160W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 160W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 150nC | auf Bestellung 39600 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRG4PC40S-E | Infineon Technologies | Trans IGBT Chip N-CH 600V 60A 160W Automotive AEC-Q101 3-Pin(3+Tab) TO-247AD Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4PC40S-E | Infineon Technologies | IGBTs DISCRETE SWITCHES | auf Bestellung 221 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRG4PC40S-E | Infineon Technologies | Trans IGBT Chip N-CH 600V 60A 160W Automotive AEC-Q101 3-Pin(3+Tab) TO-247AD Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4PC40S-E-IR | International Rectifier | Description: IGBT Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4PH50S Produktcode: 135709
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Lieblingsprodukt
| Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| AUIRG4PH50S | Infineon Technologies | Trans IGBT Chip N-CH 1200V 57A 200W 3-Pin(3+Tab) TO-247AC Tube Automotive AEC-Q101 | auf Bestellung 7303 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRG4PH50S | Infineon Technologies | Description: IGBT 1200V 141A TO-247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: -/616ns Switching Energy: 16mJ (off) Test Condition: 600V, 33A, 5Ohm, 15V Gate Charge: 227 nC Part Status: Active Current - Collector (Ic) (Max): 141 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 99 A Power - Max: 543 W Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4PH50S | Infineon Technologies | Trans IGBT Chip N-CH 1200V 57A 200W 3-Pin(3+Tab) TO-247AC Tube Automotive AEC-Q101 | auf Bestellung 17758 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRG4PH50S | Infineon Technologies | IGBTs 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4PH50S | Infineon Technologies | Trans IGBT Chip N-CH 1200V 57A 200W 3-Pin(3+Tab) TO-247AC Tube Automotive AEC-Q101 | auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRG4PH50S | INFINEON | Description: INFINEON - AUIRG4PH50S - IGBT, 57 A, 1.75 V, 217 W, 1.2 kV, TO-247AC, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.75V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 217W Bauform - Transistor: TO-247AC Dauerkollektorstrom: 57A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRG4PH50S | Infineon Technologies | Trans IGBT Chip N-CH 1200V 57A 200W 3-Pin(3+Tab) TO-247AC Tube Automotive AEC-Q101 | auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRG4PH50S | Infineon Technologies | Trans IGBT Chip N-CH 1200V 57A 200W 3-Pin(3+Tab) TO-247AC Tube Automotive AEC-Q101 | auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRG4PH50S-205 | Infineon Technologies | Description: IGBT 1200V 141A TO-247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: -/616ns Switching Energy: 16mJ (off) Test Condition: 600V, 33A, 5Ohm, 15V Gate Charge: 227 nC Part Status: Obsolete Current - Collector (Ic) (Max): 141 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 99 A Power - Max: 543 W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4PH50SXKMA1 | Infineon Technologies | Description: DISCRETE SWITCHES Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRG4PH50SXKMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET | auf Bestellung 1375 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRG4PH50SXKMA1 | Infineon Technologies | IGBTs DISCRETE SWITCHES | Produkt ist nicht verfügbar | Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRGB4062D | Infineon / IR | IGBT Transistors | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRGB4062D1 | Infineon / IR | IGBT Transistors Automotive 600V Ultra TO-220 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |