Produkte > GSF
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| GSF2TVS12A | Good-Ark Semiconductor | Description: TVS, UNI-DIR, 200W, 12V, ESGA (S Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.1A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: eSGA (SOD-123FL) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 200W Power Line Protection: No | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSF2TVS12A | Good-Ark Semiconductor | Description: TVS, UNI-DIR, 200W, 12V, ESGA (S Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.1A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: eSGA (SOD-123FL) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 200W Power Line Protection: No | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF3400 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.6A, 30V, Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V | auf Bestellung 1210 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF3400 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.6A, 30V, Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF3404 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.80A, 30V Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF3404 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.80A, 30V Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 15 V | auf Bestellung 2220 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF3404B | Good-Ark Semiconductor | Description: MOSFET, N-CHANNEL, 30V, 5.8A, SO Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 15 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF3404B | Good-Ark Semiconductor | Description: MOSFET, N-CHANNEL, 30V, 5.8A, SO Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 15 V | auf Bestellung 3943 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF3407 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -4.1A, -30 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 10V | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF3407 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -4.1A, -30 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 10V | auf Bestellung 671 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF3416 | Good-Ark Semiconductor | Description: MOSFET, N-CHANNEL, 20V, 6.5A, SO Packaging: Cut Tape (CT) Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V | auf Bestellung 2590 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF3416 | Good-Ark Semiconductor | Description: MOSFET, N-CHANNEL, 20V, 6.5A, SO Packaging: Tape & Reel (TR) Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF4 | Mersen | Cartridge Fuses 5X20MM TD FUSE 250V 4A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSF4/10 | Mersen | Cartridge Fuses 5X20MM TD FUSE 250V 4/10A | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF4/10 | Mersen USA Newburyport-MA L.L.C. | Description: 5X20MM TD FUSE 250V 4/10A Packaging: Bulk Package / Case: 5mm x 20mm Size / Dimension: 0.197" Dia x 0.787" L (5.00mm x 20.00mm) Fuse Type: Cartridge, Ceramic Mounting Type: Requires Holder Response Time: Fast Blow Approval Agency: CSA, SEMKO, UL, UR, VDE Breaking Capacity @ Rated Voltage: 1.5kA Current Rating (Amps): 400 mA Voltage Rating - AC: 250 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSF517-LPF0700 | SOSHIN | 05+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSF602-SEP0819 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| GSF603-SEP0918 | Soshin | 00+ | auf Bestellung 4279 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSF7002DW | Good-Ark Semiconductor | Description: MOSFET 2N-CH 60V 0.34A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-363 Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSF7002DW | Good-Ark Semiconductor | Description: MOSFET 2N-CH 60V 0.34A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 4627 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSF8 | Mersen | Cartridge Fuses 5X20MM TD FUSE 250V 8A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSF8/10 | Mersen | Cartridge Fuses 5X20MM TD FUSE 250V 8/10A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFA10200 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 200.00A, 1 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 60A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10430 pF @ 50 V | auf Bestellung 158 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFA20106 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 106.00A, 2 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V Power Dissipation (Max): 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 100 V | auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFA95R500 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 10.00A, 95 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tj) Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V Power Dissipation (Max): 151W (Tj) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 50 V | auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFAR02510C1D | TBI Motion | Description: BALL SCREW NUT 25MM DIA 10MM LEA | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFB0205 | Good-Ark Semiconductor | Description: MOSFET 2P-CH 20V 4A 6PPAK Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-PPAK (2x2) Part Status: Active | auf Bestellung 2930 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFB0205 | Good-Ark Semiconductor | Description: MOSFET 2P-CH 20V 4A 6PPAK Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-PPAK (2x2) Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFB0206 | Good-Ark Semiconductor | Description: MOSFET, N-CH, 5.2A, 20V, D Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFB0206 | Good-Ark Semiconductor | Description: MOSFET, N-CH, 5.2A, 20V, D Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V | auf Bestellung 2996 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFB0305 | Good-Ark Semiconductor | Description: MOSFET 2P-CH 30V 4.2A 6PPAK Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta), 7.4W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-PPAK (2x2) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFB0305 | Good-Ark Semiconductor | Description: MOSFET 2P-CH 30V 4.2A 6PPAK Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W (Ta), 7.4W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-PPAK (2x2) | auf Bestellung 2880 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFB2121 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -10.00A, - Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-DFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.9W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFB2121 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -10.00A, - Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-DFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.9W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFB3123 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -10A, -30V Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 2.2W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFB3123 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -10A, -30V Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Power Dissipation (Max): 2.2W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V | auf Bestellung 5400 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0201 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 0.70A, 25V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 550mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 218 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0201 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 0.70A, 25V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 550mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0202 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 1.45A, 20V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.45A (Ta) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0202 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 1.45A, 20V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.45A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 1366 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0204 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 4A, 20V, S Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFC0204 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 4A, 20V, S Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA | auf Bestellung 5737 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0213 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -5.8A, -20 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V | auf Bestellung 1907 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0213 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -5.8A, -20 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC02501 | Good-Ark Semiconductor | Description: MOSFET, P-CHANNEL, -25V, -0.85A, Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V | auf Bestellung 1145 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC02501 | Good-Ark Semiconductor | Description: MOSFET, P-CHANNEL, -25V, -0.85A, Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC02A05 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -5.00A, -2 Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-3L Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) | auf Bestellung 5415 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC02A05 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -5.00A, -2 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-3L Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0301 | Good-Ark Semiconductor | Description: MOSFETS, P-CH, SINGLE, -30V, -4. Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Ta) Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 15 V | auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0301 | Good-Ark Semiconductor | Description: MOSFETS, P-CH, SINGLE, -30V, -4. Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Ta) Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0304 | Good-Ark Semiconductor | Description: MOSFETS, N-CH, SINGLE, 30V, 5.3A Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0304 | Good-Ark Semiconductor | Description: MOSFETS, N-CH, SINGLE, 30V, 5.3A Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V | auf Bestellung 606 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0306 | Good-Ark Semiconductor | Description: MOSFETS, N-CH, SINGLE, 30V, 5.5A Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0306 | Good-Ark Semiconductor | Description: MOSFETS, N-CH, SINGLE, 30V, 5.5A Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V | auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0403 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -2.90A, -4 Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1W (Ta) Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0403 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -2.90A, -4 Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power Dissipation (Max): 1W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.5V @ 250µA | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0500 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 0.30A, 50V Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 30 V | auf Bestellung 2391 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0500 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 0.30A, 50V Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 30 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0603 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -3A, -60V, Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1178 pF @ 30 V | auf Bestellung 719 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC0603 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -3A, -60V, Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1178 pF @ 30 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC10110L | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 6.00A, 100 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 106mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: SOT-23-3L Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 446 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC10110L | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 6.00A, 100 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 106mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: SOT-23-3L Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 446 pF @ 50 V | auf Bestellung 2750 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC1208 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -.85A, -20 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC1208 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -.85A, -20 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Rds On (Max) @ Id, Vgs: 640mOhm @ 550mA, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFC2312 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 6.80A, 20V Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 6.8A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFC2312 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 6.80A, 20V Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 6.8A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC28110 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 3A, 100V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.9V @ 250µA Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 284mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFC28110 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 3A, 100V, Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 284mOhm @ 2A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 50 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC3401 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -4.40A, -3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V | auf Bestellung 1503 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC3401 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -4.40A, -3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4.4A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC3415 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -4.00A, -2 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1181.1 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC3415 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -4.00A, -2 Input Capacitance (Ciss) (Max) @ Vds: 1181.1 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 2523 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC3415C | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -4.00A, -2 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC3415C | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -4.00A, -2 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V | auf Bestellung 1102 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC4050 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.00A, 40V Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V | auf Bestellung 2593 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFC4050 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 5.00A, 40V Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFCP0212 | Good-Ark Semiconductor | Description: MOSFET 20V 12A 6CSP Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2609pF @ 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 34.7nC @ 6V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-CSP (2.15x1.66) Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFCP0212 | Good-Ark Semiconductor | Description: MOSFET 20V 12A 6CSP Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2609pF @ 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 34.7nC @ 6V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-CSP (2.15x1.66) Part Status: Active | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFCR2303 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -2.00A, -2 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 119mOhm @ 2A, 4.5V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V | auf Bestellung 2721 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFCR2303 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -2.00A, -2 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 119mOhm @ 2A, 4.5V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 438 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFD0460 | Good-Ark Semiconductor | Description: MOSFET, N-CH, 40V, TO-252 (DPAK) Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD0460 | Good-Ark Semiconductor | Description: MOSFET, N-CH, 40V, TO-252 (DPAK) Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD0603 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -14.00A, - Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 96mOhm @ 2A, 10V Power Dissipation (Max): 38W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 30 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD0603 | Good-Ark Semiconductor | Description: MOSFET, P-CH, SINGLE, -14.00A, - Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 96mOhm @ 2A, 10V Power Dissipation (Max): 38W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFD0625 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 27.00A, 60 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD0625 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 27.00A, 60 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V | auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD0646 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 45A, 60V,T Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V | auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD0646 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 45A, 60V,T Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD0650 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50A, 66V,T Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 30 V | auf Bestellung 1702 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD0650 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50A, 66V,T Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 30 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD06C20 | Good-Ark Semiconductor | Description: MOSFET N/P-CH 60V 19A TO252-4 Part Status: Active Supplier Device Package: TO-252-4 Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 20.1W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Cut Tape (CT) | auf Bestellung 4088 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD06C20 | Good-Ark Semiconductor | Description: MOSFET N/P-CH 60V 19A TO252-4 Part Status: Active Supplier Device Package: TO-252-4 Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 20.1W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFD0982 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50A, 100V, Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFD0982 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50A, 100V, Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 50 V | auf Bestellung 2318 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD10110 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 15.00A, 10 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 106mOhm @ 9A, 10V Power Dissipation (Max): 34W (Ta) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 446 pF @ 50 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD10110 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 15.00A, 10 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 106mOhm @ 9A, 10V Power Dissipation (Max): 34W (Ta) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 446 pF @ 50 V | auf Bestellung 454 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD1028 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 28A, 100V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| GSFD1028 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 28A, 100V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD1550 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50A, 150V, Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 75 V | auf Bestellung 2450 Stücke: Lieferzeit 10-14 Tag (e) |
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| GSFD1550 | Good-Ark Semiconductor | Description: MOSFET, N-CH, SINGLE, 50A, 150V, Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 75 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |