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NDD60N360U1T4GON SemiconductorMOSFET NFET DPAK 600V 114A 360MO
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N550U1-1GonsemiDescription: MOSFET N-CH 600V 8.2A IPAK
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N550U1-1GON SemiconductorMOSFET NFET DPAK 600V 8.2A 550MO
auf Bestellung 3075 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N550U1-1GONSEMIDescription: ONSEMI - NDD60N550U1-1G - NDD60N550U1-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 20475 Stücke:
Lieferzeit 14-21 Tag (e)
450+2.12 EUR
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N550U1-1GonsemiDescription: MOSFET N-CH 600V 8.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 20475 Stücke:
Lieferzeit 10-14 Tag (e)
351+1.7 EUR
Mindestbestellmenge: 351 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N550U1-35GON SemiconductorMOSFET NFET DPAK 600V 8.2A 550MO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N550U1-35GonsemiDescription: MOSFET N-CH 600V 8.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
auf Bestellung 20625 Stücke:
Lieferzeit 10-14 Tag (e)
289+1.86 EUR
Mindestbestellmenge: 289 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N550U1-35GONSEMIDescription: ONSEMI - NDD60N550U1-35G - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 20625 Stücke:
Lieferzeit 14-21 Tag (e)
450+2.12 EUR
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N550U1-35GonsemiDescription: MOSFET N-CH 600V 8.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N550U1T4GONN
auf Bestellung 2390 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N550U1T4GonsemiDescription: MOSFET N-CH 600V 8.2A DPAK
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N745U1-1GonsemiDescription: MOSFET N-CH 600V 6.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N745U1-1GON SemiconductorMOSFET NFET DPAK 600V 6.8A
auf Bestellung 1725 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N745U1-35GON SemiconductorMOSFET Power MOSFET 600V 6.8A 745 m_ Single
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N745U1-35GonsemiDescription: MOSFET N-CH 600V 6.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
auf Bestellung 22175 Stücke:
Lieferzeit 10-14 Tag (e)
271+1.98 EUR
Mindestbestellmenge: 271 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N745U1-35GONSEMIDescription: ONSEMI - NDD60N745U1-35G - NDD60N745U1-35G, SHIFT REGISTERS
tariffCode: 85423990
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 22175 Stücke:
Lieferzeit 14-21 Tag (e)
525+1.58 EUR
Mindestbestellmenge: 525 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N745U1-35GonsemiDescription: MOSFET N-CH 600V 6.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 84W (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N745U1T4GonsemiDescription: MOSFET N-CH 600V 6.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 84W (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N745U1T4GONSEMIDescription: ONSEMI - NDD60N745U1T4G - NDD60N745U1T4G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 12065 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.87 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N745U1T4GONN
auf Bestellung 1350 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N745U1T4GonsemiDescription: MOSFET N-CH 600V 6.6A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
auf Bestellung 10565 Stücke:
Lieferzeit 10-14 Tag (e)
271+1.98 EUR
Mindestbestellmenge: 271 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N900U1-1GONSEMIDescription: ONSEMI - NDD60N900U1-1G - NDD60N900U1-1G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 29016 Stücke:
Lieferzeit 14-21 Tag (e)
570+1.59 EUR
Mindestbestellmenge: 570 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N900U1-1GonsemiDescription: MOSFET N-CH 600V 5.7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N900U1-1GON SemiconductorMOSFET NFET DPAK 600V 5.9A
auf Bestellung 3675 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N900U1-35GON SemiconductorMOSFET NFET DPAK 600V 5.9A
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N900U1-35GonsemiDescription: MOSFET N-CH 600V 5.7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N900U1T4GON SemiconductorMOSFET NFET DPAK 600V 5.9A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N900U1T4GonsemiDescription: MOSFET N-CH 600V 5.7A DPAK
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 1922 Stücke:
Lieferzeit 10-14 Tag (e)
319+1.73 EUR
Mindestbestellmenge: 319 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N900U1T4GONN
auf Bestellung 2470 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N900U1T4GonsemiDescription: MOSFET N-CH 600V 5.7A DPAK
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N900U1T4GONSEMIDescription: ONSEMI - NDD60N900U1T4G - NDD60N900U1T4G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1922 Stücke:
Lieferzeit 14-21 Tag (e)
1922+1.59 EUR
Mindestbestellmenge: 1922 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDD60N900U1T4GON SemiconductorTrans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
297+0.58 EUR
302+0.56 EUR
307+0.52 EUR
311+0.5 EUR
317+0.48 EUR
322+0.44 EUR
500+0.42 EUR
Mindestbestellmenge: 297 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDDL01N60Z-1GONSEMIDescription: ONSEMI - NDDL01N60Z-1G - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9900 Stücke:
Lieferzeit 14-21 Tag (e)
2025+0.37 EUR
Mindestbestellmenge: 2025 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDDL01N60Z-1GonsemiDescription: MOSFET N-CH 600V 800MA IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 25 V
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
1137+0.46 EUR
Mindestbestellmenge: 1137 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NDDL01N60Z-1GonsemiMOSFET NFET DPAK 600V 1.5A 8.50H
auf Bestellung 1411 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDDL01N60Z-1GonsemiDescription: MOSFET N-CH 600V 800MA IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDDL01N60ZT4GonsemiMOSFET NFET DPAK 600V 0.4A 15OHM
auf Bestellung 2145 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NDDL01N60ZT4GonsemiDescription: MOSFET N-CH 600V 800MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 25 V
auf Bestellung 22500 Stücke:
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1137+0.46 EUR
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NDDL01N60ZT4GONSEMIDescription: ONSEMI - NDDL01N60ZT4G - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: TBC
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 22500 Stücke:
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NDDL01N60ZT4GonsemiDescription: MOSFET N-CH 600V 800MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 25 V
Produkt ist nicht verfügbar
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NDDP010N25AZ-1HON SemiconductorDescription: MOSFET N-CH 250V 10A IPAK/TP
auf Bestellung 9500 Stücke:
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NDDP010N25AZ-1HON SemiconductorMOSFET NCH 10A 250V TP(IPAK
auf Bestellung 208 Stücke:
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NDDP010N25AZT4HonsemiDescription: MOSFET N-CH 250V 10A DPAK/TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
Produkt ist nicht verfügbar
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NDDP010N25AZT4HON SemiconductorTrans MOSFET N-CH 250V 10A 3-Pin(2+Tab) DPAK T/R
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NDDP010N25AZT4HON SemiconductorMOSFET NCH 10A 250V TP-FA(DPAK)
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NDDP010N25AZT4HonsemiDescription: MOSFET N-CH 250V 10A DPAK/TP-FA
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar
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NDDP010N25AZT4HonsemiDescription: MOSFET N-CH 250V 10A DPAK/TP-FA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
auf Bestellung 60 Stücke:
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60+1.26 EUR
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NDDP010N25AZT4HON Semiconductor
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
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NDDP010N25AZT4HON SemiconductorTrans MOSFET N-CH 250V 10A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1400 Stücke
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