Produkte > DMC
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| DMC31D5UDJ-7B | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar Mounting: SMD Type of transistor: N/P-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC31D5UDJ-7B | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 16582 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC31D5UDJ-7B | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.22A/0.2A 6-Pin SOT-963 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC31D5UDJ-7B | DIODES INC. | Description: DIODES INC. - DMC31D5UDJ-7B - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 220 mA, 220 mA, 1.5 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 220mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 220mA Drain-Source-Durchgangswiderstand, p-Kanal: 5ohm Verlustleistung, p-Kanal: 350mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-963 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 350mW Betriebstemperatur, max.: 150°C | auf Bestellung 6260 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC31D5UDJ-7B | Diodes Incorporated | Description: MOSFET N/P-CH 30V 0.22A SOT963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 Part Status: Active | auf Bestellung 490303 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3350LDW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT363 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3350LDW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT363 T&R Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V, 800pC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 38.4pF @ 15V, 19pF @ 15V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), 600mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3350LDW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT363 T&R 3K | auf Bestellung 3000 Stücke: Lieferzeit 122-126 Tag (e) |
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| DMC3350LDW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT363 T&R Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V, 800pC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 38.4pF @ 15V, 19pF @ 15V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), 600mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | auf Bestellung 171000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3350LDWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT363 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3350LDWQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT363 T&R Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 38.4pF @ 15V, 19pF @ 15V Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V, 800pC @ 10V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), 600mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3350LDWQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT363 T&R Input Capacitance (Ciss) (Max) @ Vds: 38.4pF @ 15V, 19pF @ 15V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), 600mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 10V, 800pC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3350LDWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SOT363 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3356 | onsemi | Switching Controllers | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3400SDW-13 | Diodes Incorporated | MOSFETs 30V Comp Pair Enh 20Vgs 55pF 0.6nC | auf Bestellung 11569 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3400SDW-13 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 0.65A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 310mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 102383 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3400SDW-13 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3400SDW-13 | DIODES INC. | Description: DIODES INC. - DMC3400SDW-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 650 mA, 650 mA, 0.2 ohm tariffCode: 85412100 euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 650mA Dauer-Drainstrom Id, p-Kanal: 650mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 650mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm Verlustleistung, p-Kanal: 310mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 310mW Betriebstemperatur, max.: 150°C | auf Bestellung 24263 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3400SDW-13 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 0.65A SOT363 Power - Max: 310mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Drain to Source Voltage (Vdss): 30V | auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3400SDW-13 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1629 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3400SDW-13 | DIODES INC. | Description: DIODES INC. - DMC3400SDW-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 650 mA, 650 mA, 0.2 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 650mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 650mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm Verlustleistung, p-Kanal: 310mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 310mW Betriebstemperatur, max.: 150°C | auf Bestellung 24263 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3400SDW-13 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R | auf Bestellung 480000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3400SDW-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 0.5/-0.36A Power dissipation: 0.39W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.4/0.9Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair | auf Bestellung 929 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3400SDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3400SDW-7 | DIODES INC. | Description: DIODES INC. - DMC3400SDW-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 650 mA, 650 mA, 0.2 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 650mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 650mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm Verlustleistung, p-Kanal: 310mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 310mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 5977 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3400SDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3400SDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3400SDW-7 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 0.65A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Drain to Source Voltage (Vdss): 30V Power - Max: 310mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) | auf Bestellung 153919 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3400SDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R | auf Bestellung 594000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3400SDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R | auf Bestellung 1214 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 1214 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3400SDW-7 | Diodes Incorporated | MOSFETs 30V Comp Pair Enh 20Vgs 55pF 0.6nC | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3400SDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R | auf Bestellung 594000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3400SDW-7 | DIODES INC. | Description: DIODES INC. - DMC3400SDW-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 650 mA, 650 mA, 0.2 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 650mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 650mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm Verlustleistung, p-Kanal: 310mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 310mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3400SDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R | auf Bestellung 1214 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 1214 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3400SDW-7 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 0.65A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 15V Current - Continuous Drain (Id) @ 25°C: 650mA, 450mA Drain to Source Voltage (Vdss): 30V Power - Max: 310mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | auf Bestellung 153000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3400SDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.65A/0.45A 6-Pin SOT-363 T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3401LDW-13 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 0.8A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, 19pF @ 15V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, 800pC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3401LDW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 127 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3401LDW-13 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.8A/0.55A 6-Pin SOT-363 T/R | auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3401LDW-13 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 0.8A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, 19pF @ 15V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, 800pC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3401LDW-13 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.8A/0.55A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3401LDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.8A/0.55A 6-Pin SOT-363 T/R | auf Bestellung 3537000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3401LDW-7 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 0.8A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, 800pC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, 19pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 290mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3401LDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.8A/0.55A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3401LDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.8A/0.55A 6-Pin SOT-363 T/R | auf Bestellung 2628000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3401LDW-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.8A/0.55A 6-Pin SOT-363 T/R | auf Bestellung 3537000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3401LDW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3401LDW-7 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 0.8A SOT363 Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, 800pC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, 19pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 290mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3401LDW-7-50 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V SOT363 T&R Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, 19pF @ 15V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, 800pC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3401LDW-7-50 | Diodes Zetex | Trans MOSFET N/P-CH 30V 0.8A/0.55A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3730UFL3-7 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 6DFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: X2-DFN1310-6 (Type B) Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA Drain to Source Voltage (Vdss): 30V Power - Max: 390mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3730UFL3-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 1.1A/0.7A 6-Pin X2-DFN T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3730UFL3-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 1.1A/0.7A 6-Pin X2-DFN T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3730UFL3-7 | DIODES INC. | Description: DIODES INC. - DMC3730UFL3-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 1.1 A, 1.1 A, 0.46 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 1.1A Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm Verlustleistung, p-Kanal: 390mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: X2-DFN1310 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.46ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 390mW Betriebstemperatur, max.: 150°C | auf Bestellung 945 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3730UFL3-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 3972 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3730UFL3-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 1.1A/0.7A 6-Pin X2-DFN T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3730UFL3-7 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 6DFN Part Status: Active Supplier Device Package: X2-DFN1310-6 (Type B) Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA Drain to Source Voltage (Vdss): 30V Power - Max: 390mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 35669 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3730UFL3-7 | Diodes Zetex | Trans MOSFET N/P-CH 30V 1.1A/0.7A 6-Pin X2-DFN T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3730UFL3-7 | DIODES INC. | Description: DIODES INC. - DMC3730UFL3-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 1.1 A, 1.1 A, 0.46 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 1.1A Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm Verlustleistung, p-Kanal: 390mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: X2-DFN1310 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.46ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 390mW Betriebstemperatur, max.: 150°C | auf Bestellung 945 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3730UVT-13 | Diodes Incorporated | Description: MOSFET N/P-CH 25V 0.68A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 190000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3730UVT-13 | Diodes Zetex | Complementary Pair Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3730UVT-13 | Diodes Zetex | Complementary Pair Enhancement Mode MOSFET | auf Bestellung 190000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3730UVT-13 | Diodes Incorporated | MOSFETs 25V Complimentary Pair Enhancemnt Mode | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3730UVT-7 | Diodes Zetex | Complementary Pair Enhancement Mode MOSFET | auf Bestellung 186000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3730UVT-7 | Diodes Incorporated | Description: MOSFET N/P-CH 25V 0.68A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 188254 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3730UVT-7 | Diodes Incorporated | MOSFETs 25V Complimentary Pair Enhancemnt Mode | auf Bestellung 4931 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3730UVT-7 | Diodes Zetex | Complementary Pair Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3730UVT-7 | Diodes Incorporated | Description: MOSFET N/P-CH 25V 0.68A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 186000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3732UVT-13 | Diodes Incorporated | Description: MOSFET N/P-CH 30V 1.1A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 540mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.1V @ 250µA Supplier Device Package: TSOT-26 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3732UVT-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3732UVT-7 | Diodes Zetex | Complementary Pair Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3732UVT-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V TSOT26 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 540mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.1V @ 250µA Supplier Device Package: TSOT-26 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3732UVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3732UVTQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V TSOT26 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 540mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3732UVTQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3732UVTQ-13 | Diodes Zetex | MOSFET BVDSS: 25V30V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3732UVTQ-7 | Diodes Zetex | MOSFET BVDSS: 25V30V TSOT26 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC3732UVTQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V TSOT26 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 540mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 81000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC3732UVTQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC40 | DMC Tools | Daniels Manufacturing Corporation DMC FALCON 10,100,20,200,50 & 900 TOOL KIT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC4001-002 | 09+ | auf Bestellung 118 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMC4001002 | DAEWOO | auf Bestellung 118 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| DMC4015SSD | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC4015SSD-13 | Diodes Incorporated | Description: MOSFET N/P-CH 40V 8.6A/6.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 13479 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC4015SSD-13 | Diodes Zetex | Trans MOSFET N/P-CH 40V 8.6A/6.2A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC4015SSD-13 | DIODES INC. | Description: DIODES INC. - DMC4015SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 8.6 A, 8.6 A, 0.015 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.029ohm Verlustleistung, p-Kanal: 1.7W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.015ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.7W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) | auf Bestellung 539 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC4015SSD-13 | Diodes Zetex | Trans MOSFET N/P-CH 40V 8.6A/6.2A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC4015SSD-13 | DIODES/ZETEX | Trans MOSFET N/P-CH 40V 8.6A/6.2A Automotive 8-Pin SO T/R DMC4015SSD-13 TDMC4015ssd Anzahl je Verpackung: 100 Stücke | auf Bestellung 250 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMC4015SSD-13 | Diodes Zetex | Trans MOSFET N/P-CH 40V 8.6A/6.2A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC4015SSD-13 | Diodes Incorporated | Description: MOSFET N/P-CH 40V 8.6A/6.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC4015SSD-13 | DIODES INC. | Description: DIODES INC. - DMC4015SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 8.6 A, 8.6 A, 0.015 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.029ohm Verlustleistung, p-Kanal: 1.7W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.015ohm productTraceability: No Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.7W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) | auf Bestellung 539 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC4015SSD-13 | Diodes Zetex | Trans MOSFET N/P-CH 40V 8.6A/6.2A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC4015SSD-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Mounting: SMD Power dissipation: 1.7W Polarisation: unipolar Drain current: 9.5/-12.2A Kind of channel: enhancement Drain-source voltage: 40/-40V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: SO8 On-state resistance: 0.015/0.029Ω | auf Bestellung 1471 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC4015SSD-13 | Diodes Incorporated | MOSFETs Comp Pair Enh FET 40Vdss 20Vgss | auf Bestellung 3053 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC4015SSD-13 | Diodes Zetex | Trans MOSFET N/P-CH 40V 8.6A/6.2A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC4028SSD-13 | Diodes Incorporated | Description: MOSFET N/P-CH 40V 6.5A/4.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.8A Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 32263 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC4028SSD-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Power dissipation: 1.8W Polarisation: unipolar Drain current: 5.5/-4.2A Kind of channel: enhancement Drain-source voltage: 40/-40V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.028/0.05Ω | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMC4028SSD-13 | DIODES INC. | Description: DIODES INC. - DMC4028SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 6.5 A, 6.5 A, 0.028 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 40V Dauer-Drainstrom Id, n-Kanal: 6.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.05ohm Verlustleistung, p-Kanal: 1.8W Drain-Source-Spannung Vds, n-Kanal: 40V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm productTraceability: No usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.8W Betriebstemperatur, max.: 150°C | auf Bestellung 385 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC4028SSD-13 | Diodes Incorporated | MOSFETs 40V Comp Dual ENH Low On-Resistance | auf Bestellung 73 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC4028SSD-13 | Diodes Incorporated | Description: MOSFET N/P-CH 40V 6.5A/4.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.8A Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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